CN105652069A - Digital voltage monitor of intelligent transformer substation based on humidity detection - Google Patents

Digital voltage monitor of intelligent transformer substation based on humidity detection Download PDF

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Publication number
CN105652069A
CN105652069A CN201610070306.3A CN201610070306A CN105652069A CN 105652069 A CN105652069 A CN 105652069A CN 201610070306 A CN201610070306 A CN 201610070306A CN 105652069 A CN105652069 A CN 105652069A
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substrate
polyvinyl alcohol
zinc oxide
silicon chip
moisture sensor
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蔡权
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/22Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance
    • G01N27/223Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance for determining moisture content, e.g. humidity
    • G01N27/225Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance for determining moisture content, e.g. humidity by using hygroscopic materials
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/22Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance
    • G01N27/227Sensors changing capacitance upon adsorption or absorption of fluid components, e.g. electrolyte-insulator-semiconductor sensors, MOS capacitors

Abstract

The invention discloses a digital voltage monitor of an intelligent transformer substation based on humidity detection. The voltage monitor is provided with a ZnO-based humidity sensitive sensor module; a humidity sensitive element part of the ZnO-based humidity sensitive sensor module adopts a silicon nano-pore column material as a substrate; a zinc oxide nano wire combined graphene material is used as a sensitive material; a device structure is an interdigital electrode type; the structure has an extremely large specific surface area and a good gas dispersion channel; and furthermore, a surface layer of the voltage monitor is provided with a dehumidified polyvinyl alcohol-ethylenediamine tetramethylenephosphonic acid-polysulfone-based film hollow fiber composite film assembly, so that the humidity induction and the humidity absorption and corrosion-proof functions of the voltage monitor are greatly improved.

Description

A kind of intelligent substation digital voltage monitoring instrument based on Humidity Detection
Technical field
The present invention relates to electricity field, be specifically related to a kind of intelligent substation digital voltage monitoring instrument based on Humidity Detection.
Background technology
Voltage monitoring instrument is the statistical voltage monitoring instrument that the slowly varying caused voltage deviation of power system normal operating condition carries out continuous print monitoring and statistics. Possess monitoring, the function such as analysis, memory, inquiry, parameter are arranged. Suitable in low-pressure system, high-pressure system etc.
But, owing to voltage monitoring instrument uses in power system, when its local environment humidity is bigger, very easily cause various accident to cause unnecessary loss.
Summary of the invention
It is an object of the invention to avoid above-mentioned weak point of the prior art to provide a kind of intelligent substation digital voltage monitoring instrument based on Humidity Detection.
The purpose of the present invention is achieved through the following technical solutions:
The invention provides a kind of intelligent substation digital voltage monitoring instrument based on Humidity Detection, described voltage monitoring instrument (1) zno-based moisture sensor module (2) is installed, it can detect the humidity of voltage monitoring instrument local environment, adds the environment monitoring function of voltage monitoring instrument.
Described zno-based moisture sensor module (2) is mainly made up of wet sensitive sensing element and data read element, described wet sensitive sensing element is interdigital electrode type, including silicon chip substrate (10), Si-NPA (20), zinc oxide nanowire (30) and graphene layer (40); Described power module (1) is additionally provided with microprocessor, LED display lamp bar and wireless communication module; The input of described microprocessor is connected with the outfan of described ZnO moisture sensor module (2), described ZnO moisture sensor module (2) detected value reaches preset value, described microprocessor controls LED display lamp bar and flashes, described LED display lamp bar is connected to a buzzer, touches buzzer and send alarm while the flicker of LED display lamp bar; Described wireless communication module is CC2420 wireless communication module, described ZnO moisture sensor module (2) can by described CC2420 wireless communication module transmission detection data to data basestation, by the Internet, mobile subscriber terminal can check that detection data are maybe uploaded to cloud storage center by testing result, form detection and monitoring network; The output electric wire sidewall of described power module (1) is provided with a polyvinyl alcohol for dehumidification-ethylenediamine tetraacetic methene phosphoric acid-polysulfones basement membrane hollow fiber composite membrane assembly, polyvinyl alcohol-ethylenediamine tetraacetic methene phosphoric acid-polysulfones basement membrane hollow fiber composite membrane is fixed in glass electrode by this membrane module, and glass electrode is connected with moisture sensor;Described zinc oxide nanowire (30) length about 33 ��m.
Preferably, the preparation method of described wet sensitive sensing element is as follows:
Step one, prepares Si-NPA substrate: the silicon chip substrate (10) of 3cm �� 3cm is included clean dirt, hydro-thermal method corrosion preparation Si-NPA substrate; 1. take the silicon chip of 3cm �� 3cm, silicon chip is placed in the mixed solution of sulphuric acid and hydrogen peroxide volume ratio 4:1, supersound process 20min, taking-up deionized water cleans, to remove the organic impurities of silicon chip surface; It is H that silicon chip is positioned over volume ratio2O:H2O2: NH4In the mixed solution of OH=5:2:1, ultrasonic cleaning 20min, the deionized water of taking-up subsequently cleans, to remove Organic substance and the metal complex of silicon chip surface; 2. hydro-thermal method corrosion is utilized to prepare Si-NPA: to weigh the Fe (NO of 1.0g3)��9H2O pours in politef, is added thereto to the HF solution of 20ml deionized water and 30ml40% subsequently; Putting in solution by the silicon chip that upper step is cleaned, add a cover and put in water heating kettle, put in drying baker by water heating kettle subsequently, 180 DEG C of constant temperature keep 30min, after natural cooling, take out Wafer Cleaning and namely obtain Si-NPA substrate;
Step 2, growth of zinc oxide nano line: adopt magnetron sputtering to prepare zinc oxide nanowire in conjunction with thermal oxidation method; Silicon nano hole column substrate is put in magnetic control sputtering device, when sputtering voltage 220V, sputtering current 0.8A, magnetron sputtering Zn film, thickness is 50nm, putting it into subsequently in batch-type furnace, at 400 DEG C, thermal oxidation method processes 4h, obtains diameter and is about the zinc oxide nanowire of 30nm;
Step 3, grows graphene layer: adopt process for preparing graphenes by chemical vapour deposition; First magnetron sputtering layer of metal Ni film on the substrate that upper step obtains, thickness is about 5nm; Secondly, putting in tube furnace by this substrate, be warming up to 900 DEG C, pass into hydrogen as protection reducing gas by given pace, stablize 30min, then, pass into methane 2h according to a certain percentage simultaneously, stopping starts Temperature fall after passing into methane; Under Ni catalyst action, methane molecule at high temperature can be cracked into carbon atom and hydrogen atom, at temperature-fall period and under the protection of hydrogen, and carbon atom meeting formation of deposits one layer graphene thin film;
Step 4, is deposited with interdigital electrode: after obtaining growing the silicon nano hole column substrate having zinc oxide nanowire and Graphene, covers interdigital electrode mask at substrate surface, utilizes magnetron sputtering method to be deposited with Au thin film thick for one layer of 500nm on its surface as electrode;
Step 5, assembles sensing element and reads data element: the both positive and negative polarity wire reading data element is connected in interdigital electrode, two parts composition Zinc oxide-base moisture sensor device;
The preparation method of described polyvinyl alcohol-ethylenediamine tetraacetic methene phosphoric acid-polysulfones basement membrane hollow fiber composite membrane assembly is as follows:
Step one, polysulfone hollow fibre basement membrane pretreatment: polysulfone hollow fibre basement membrane to carry out pretreatment before coating, after soaking 12h with deionized water, with the soak with hydrochloric acid 60min of 1.0mol/l, remove glycerin layer and other organic solvents on film surface; Then use in the sodium hydroxide solution of 1.0mol/l and excessive hydrochloric acid, finally repeatedly rinse with deionized water, make film surface in neutrality, dry in the shade standby;
Step 2, prepare polyvinyl alcohol-ethylenediamine tetraacetic methene phosphoric acid-polysulfone hollow fibre composite membrane: add in deionized water by the polyvinyl alcohol that the average degree of polymerization of certain mass is 1750 �� 50, it is about 3h 50 DEG C of stirred in water bath to be completely dissolved to polyvinyl alcohol, obtains 5wt% polyvinyl alcohol homogeneous phase aqueous solution;Adding a certain amount of ethylenediamine tetraacetic methene phosphoric acid after solution is cooled to room temperature, and at room temperature stir 1.5h, namely standing and defoaming obtains casting solution; Polysulfones basement membrane (molecular cut off 30000) through pretreatment is taken out after casting solution soaks 20min, is vertically fixed on the guide frame that dries in the air and dries in the shade; After the film of primary coating soaks 20min again in casting solution, will reversely be fixed on and dry in the air on guide frame, dry at room temperature over night, prepare required PVA-EDTMPA/PS hollow fiber composite membrane.
Step 3, fixing: polyvinyl alcohol-ethylenediamine tetraacetic methene phosphoric acid-polysulfone hollow fibre composite membrane is fixed in glass electrode.
There is advantages that
1. configuration aspects, the present invention adopts Si-NPA (silicon nano hole column) material to be substrate, ZnONWs (zinc oxide nanowire) is sensitive material in conjunction with Graphene, this structure has great specific surface area and good gas diffusion paths, substantially increases the sensitivity of sensitive material in this voltage monitoring instrument;
2. adopting grapheme material can increase the conductivity of material greatly, hydrone primary attachment is on the surface of nano wire Yu Graphene simultaneously, it is easy to desorption, and the repeatability that humidity is responded by voltage monitoring instrument is good;
3. preparation process material consumption is few, and the controllable degree of technique is high, device small volume and less weight, it is easy to batch production.
Accompanying drawing explanation
Utilize accompanying drawing that invention is described further, but the embodiment in accompanying drawing does not constitute any limitation of the invention, for those of ordinary skill in the art, under the premise not paying creative work, it is also possible to obtain other accompanying drawing according to the following drawings.
Fig. 1 is the schematic diagram of voltage monitoring instrument of the present invention.
Fig. 2 is sensor sensing componentry schematic diagram.
Detailed description of the invention
Sensor technology is able to obtain main path and the means of various information in nature, production field. It is the cutting edge technology of a kind of modern science and technology, and it is one of three big pillars of modern information technologies, is the important benchmark weighing a national science and technology level of development. According to definition, sensor is: " can experience the measured of regulation and convert device or the device of usable output signal according to certain rule to, being generally made up of sensing element, conversion element and measuring circuit. " to be able to direct feeling measured and be converted into and the measured element of physical quantity having the electricity determining relation or easily becoming electricity for sensing element. Conversion element is able to the measured element being converted directly into the electricity determining relation experienced by sensing element. Measuring circuit is that the signal of telecommunication that conversion element exports is converted to the circuit of easy-to-handle capable telecommunications number.
Humidity refers to the content of water vapor in air. Along with the development of modern science and technology, the Detection & Controling of humidity in productive life being had very important meaning, the application of moisture sensor is also more and more extensive, and such as moisture sensor has a wide range of applications in the such as field such as household electrical appliance, automobile, industrial or agricultural.
Dew cell refers to that ambient humidity has response maybe can be converted to the element that can measure signal accordingly by ambient humidity, and it has a wide range of applications in fields such as industrial and agricultural production, environment measuring and Engineering Control. The core of humidity sensor is humidity-sensitive material, and it is the hydrone utilizing adsorption effect directly to adsorb in air, makes the electrology characteristic etc. of material change, thus detecting the change of humidity. Zinc oxide is a kind of semiconductor material with wide forbidden band, and it is all widely used in fields such as sensor, solaode, lithium battery, catalysis. And zinc oxide material to have preparation cost low, chemical stability, Heat stability is good, prepare the advantages such as controlled and pattern is abundant, be a kind of desirably humidity sensor material. The advantage of the aspects such as the pattern that has additionally, due to nano material itself, structure, nano zinc oxide material is very sensitive to humidity of external environment condition etc., has obvious Unordered system.
Humidity sensor refers to after utilizing humidity-sensitive material adsorbed water molecule, and the principle that measured amount changes is made.Generally accepted theory be the Water Molecular Adsorption in air when sensitive material surface and grain boundaries, reduce surface and the grain boundary resistance of material.
The problem such as not high, response recovery time length for existing moisture sensor sensitivity, this programme, based on nano zinc oxide material, is prepared for the zinc oxide nanowire with large specific surface area, and in conjunction with the high grapheme material of conductivity, makes moisture sensor.
Moisture sensor of the present invention is made up of wet sensitive sensing element part and data read element part. Wherein, wet sensitive sensing element is based on zinc oxide nanowire, make in conjunction with grapheme material, device architecture is interdigital electrode type, when moisture sensor periphery humidity changes, Water Molecular Adsorption can change in the speed of sensitive material surface and crystal boundary, causes the conductivity of sensitive material to change, and then reflects its capacitance variations from read element part; Digital independent element is with microprocessor, and it is the voltage applying characteristic frequency to sensing element, reads different numerical value according to the change of sensing element electric capacity at this voltage and carrys out the change of display environment humidity.
The invention provides a kind of intelligent substation digital voltage monitoring instrument based on Humidity Detection, described voltage monitoring instrument (1) zno-based moisture sensor module (2) is installed, it can detect the humidity of voltage monitoring instrument local environment, adds the environment monitoring function of voltage monitoring instrument.
Illustrate that the present invention is further described below in conjunction with accompanying drawing.
Fig. 1 is the schematic diagram of voltage monitoring instrument of the present invention. Voltage monitoring instrument 1 zno-based moisture sensor module 2 is installed.
Fig. 2 is sensor sensing componentry schematic diagram. Wherein: 10-silicon chip substrate, 20-Si-NPA, 30-zinc oxide nanowire, 40-graphene layer.
The invention will be further described with the following Examples.
Embodiment 1:
A kind of intelligent substation digital voltage monitoring instrument based on Humidity Detection as shown in Figure 1, described voltage monitoring instrument 1 is provided with zno-based moisture sensor module 2; Described zno-based moisture sensor module 2 is mainly made up of wet sensitive sensing element and data read element. As in figure 2 it is shown, described wet sensitive sensing element is interdigital electrode type, it includes silicon chip substrate 10, Si-NPA20, zinc oxide nanowire 30 and graphene layer 40; Described voltage monitoring instrument 1 is additionally provided with microprocessor, LED display lamp bar and wireless communication module; The input of described microprocessor is connected with the outfan of described ZnO moisture sensor module, described ZnO moisture sensor module detected value reaches preset value, described microprocessor controls LED display lamp bar and flashes, described LED display lamp bar is connected to a buzzer, touches buzzer and send alarm while the flicker of LED display lamp bar; Described wireless communication module is CC2420 wireless communication module, described ZnO moisture sensor module can by described CC2420 wireless communication module transmission detection data to data basestation, by the Internet, mobile subscriber terminal can check that detection data are maybe uploaded to cloud storage center by testing result, form detection and monitoring network; The output electric wire sidewall of described voltage monitoring instrument is provided with a polyvinyl alcohol for dehumidification-ethylenediamine tetraacetic methene phosphoric acid-polysulfones basement membrane hollow fiber composite membrane assembly, polyvinyl alcohol-ethylenediamine tetraacetic methene phosphoric acid-polysulfones basement membrane hollow fiber composite membrane is fixed in glass electrode by this membrane module, and glass electrode is connected with moisture sensor; Described zinc oxide nanowire 30 length about 33 ��m.
Preferably, the preparation method of described wet sensitive sensing element is as follows:
Step one, prepares Si-NPA substrate: the silicon chip substrate of 3cm �� 3cm is included clean dirt, hydro-thermal method corrosion preparation Si-NPA substrate; 1. take the silicon chip of 3cm �� 3cm, silicon chip is placed in the mixed solution of sulphuric acid and hydrogen peroxide volume ratio 4:1, supersound process 20min, taking-up deionized water cleans, to remove the organic impurities of silicon chip surface; It is H that silicon chip is positioned over volume ratio2O:H2O2: NH4In the mixed solution of OH=5:2:1, ultrasonic cleaning 20min, the deionized water of taking-up subsequently cleans, to remove Organic substance and the metal complex of silicon chip surface; 2. hydro-thermal method corrosion is utilized to prepare Si-NPA: to weigh the Fe (NO of 1.0g3)��9H2O pours in politef, is added thereto to the HF solution of 20ml deionized water and 30ml40% subsequently; Putting in solution by the silicon chip that upper step is cleaned, add a cover and put in water heating kettle, put in drying baker by water heating kettle subsequently, 180 DEG C of constant temperature keep 30min, after natural cooling, take out Wafer Cleaning and namely obtain Si-NPA substrate;
Step 2, growth of zinc oxide nano line: adopt magnetron sputtering to prepare zinc oxide nanowire in conjunction with thermal oxidation method; Silicon nano hole column substrate is put in magnetic control sputtering device, when sputtering voltage 220V, sputtering current 0.8A, magnetron sputtering Zn film, thickness is 50nm, putting it into subsequently in batch-type furnace, at 400 DEG C, thermal oxidation method processes 4h, obtains diameter and is about the zinc oxide nanowire of 30nm;
Step 3, grows graphene layer: adopt process for preparing graphenes by chemical vapour deposition; First magnetron sputtering layer of metal Ni film on the substrate that upper step obtains, thickness is about 5nm; Secondly, putting in tube furnace by this substrate, be warming up to 900 DEG C, pass into hydrogen as protection reducing gas by given pace, stablize 30min, then, pass into methane 2h according to a certain percentage simultaneously, stopping starts Temperature fall after passing into methane; Under Ni catalyst action, methane molecule at high temperature can be cracked into carbon atom and hydrogen atom, at temperature-fall period and under the protection of hydrogen, and carbon atom meeting formation of deposits one layer graphene thin film;
Step 4, is deposited with interdigital electrode: after obtaining growing the silicon nano hole column substrate having zinc oxide nanowire and Graphene, covers interdigital electrode mask at substrate surface, utilizes magnetron sputtering method to be deposited with Au thin film thick for one layer of 500nm on its surface as electrode;
Step 5, assembles sensing element and reads data element: the both positive and negative polarity wire reading data element is connected in interdigital electrode, two parts composition Zinc oxide-base moisture sensor device;
Wherein, the preparation method of described polyvinyl alcohol-ethylenediamine tetraacetic methene phosphoric acid-polysulfones basement membrane hollow fiber composite membrane assembly is as follows:
Step one, polysulfone hollow fibre basement membrane pretreatment: polysulfone hollow fibre basement membrane to carry out pretreatment before coating, after soaking 12h with deionized water, with the soak with hydrochloric acid 60min of 1.0mol/l, remove glycerin layer and other organic solvents on film surface; Then use in the sodium hydroxide solution of 1.0mol/l and excessive hydrochloric acid, finally repeatedly rinse with deionized water, make film surface in neutrality, dry in the shade standby;
Step 2, prepare polyvinyl alcohol-ethylenediamine tetraacetic methene phosphoric acid-polysulfone hollow fibre composite membrane: add in deionized water by the polyvinyl alcohol that the average degree of polymerization of certain mass is 1750 �� 50, it is about 3h 50 DEG C of stirred in water bath to be completely dissolved to polyvinyl alcohol, obtains 5wt% polyvinyl alcohol homogeneous phase aqueous solution;Adding a certain amount of ethylenediamine tetraacetic methene phosphoric acid after solution is cooled to room temperature, and at room temperature stir 1.5h, namely standing and defoaming obtains casting solution; Polysulfones basement membrane (molecular cut off 30000) through pretreatment is taken out after casting solution soaks 20min, is vertically fixed on the guide frame that dries in the air and dries in the shade; After the film of primary coating soaks 20min again in casting solution, will reversely be fixed on and dry in the air on guide frame, dry at room temperature over night, prepare required PVA-EDTMPA/PS hollow fiber composite membrane.
Step 3, fixing: polyvinyl alcohol-ethylenediamine tetraacetic methene phosphoric acid-polysulfone hollow fibre composite membrane is fixed in glass electrode.
Wet sensitive is tested:
Zinc oxide-base moisture sensor is put in control appliance of temperature and humidity. Test temperature is set as 20 DEG C, then controls relative humidity variations and ranges for 10%��95%, reads the electric capacity of sensing element with humidity situation of change;
The sensitivity definition of dew cell is: CRH-C11/ C11�� 100%, wherein CRHFor the component capacitance value obtained under test environment humidity, C11Capacitance for 11% time element of relative humidity. Are defined as the response of dew cell or recovery time testing capacitor value and reach the time used by total variation 80% at the variable quantity of 11%RH to 75%RH;
When testing frequency and being 100Hz, under the relative humidity of 15%, 35%, 55%, 75%, 95%, the sensitivity of sensing element respectively 4,39,234,897 and 2371, response and respectively 8s and 11s recovery time, test result shows that this voltage monitoring instrument has good wet sensitive performance, make this voltage monitoring instrument add the detection function of ambient humidity, ensure the use environment of its safety.
Embodiment 2
A kind of intelligent substation digital voltage monitoring instrument based on Humidity Detection as shown in Figure 1, described voltage monitoring instrument 1 is provided with zno-based moisture sensor module 2; Described zno-based moisture sensor module 2 is mainly made up of wet sensitive sensing element and data read element. As in figure 2 it is shown, described wet sensitive sensing element is interdigital electrode type, it includes silicon chip substrate 10, Si-NPA20, zinc oxide nanowire 30 and graphene layer 40; Described voltage monitoring instrument 1 is additionally provided with microprocessor, LED display lamp bar and wireless communication module; The input of described microprocessor is connected with the outfan of described ZnO moisture sensor module, described ZnO moisture sensor module detected value reaches preset value, described microprocessor controls LED display lamp bar and flashes, described LED display lamp bar is connected to a buzzer, touches buzzer and send alarm while the flicker of LED display lamp bar; Described wireless communication module is CC2420 wireless communication module, described ZnO moisture sensor module can by described CC2420 wireless communication module transmission detection data to data basestation, by the Internet, mobile subscriber terminal can check that detection data are maybe uploaded to cloud storage center by testing result, form detection and monitoring network; The output electric wire sidewall of described voltage monitoring instrument is provided with a polyvinyl alcohol for dehumidification-ethylenediamine tetraacetic methene phosphoric acid-polysulfones basement membrane hollow fiber composite membrane assembly, polyvinyl alcohol-ethylenediamine tetraacetic methene phosphoric acid-polysulfones basement membrane hollow fiber composite membrane is fixed in glass electrode by this membrane module, and glass electrode is connected with moisture sensor; Described zinc oxide nanowire 30 length about 35 ��m.
Preferably, the preparation method of described wet sensitive sensing element is as follows:
Step one, prepares Si-NPA substrate: the silicon chip substrate of 3cm �� 3cm is included clean dirt, hydro-thermal method corrosion preparation Si-NPA substrate;1. take the silicon chip of 3cm �� 3cm, silicon chip is placed in the mixed solution of sulphuric acid and hydrogen peroxide volume ratio 4:1, supersound process 20min, taking-up deionized water cleans, to remove the organic impurities of silicon chip surface; It is H that silicon chip is positioned over volume ratio2O:H2O2: NH4In the mixed solution of OH=5:1:1, ultrasonic cleaning 20min, the deionized water of taking-up subsequently cleans, to remove Organic substance and the metal complex of silicon chip surface; 2. hydro-thermal method corrosion is utilized to prepare Si-NPA: to weigh the Fe (NO of 1.0g3)��9H2O pours in politef, is added thereto to the HF solution of 20ml deionized water and 30ml40% subsequently; Putting in solution by the silicon chip that upper step is cleaned, add a cover and put in water heating kettle, put in drying baker by water heating kettle subsequently, 180 DEG C of constant temperature keep 30min, after natural cooling, take out Wafer Cleaning and namely obtain Si-NPA substrate;
Step 2, growth of zinc oxide nano line: adopt magnetron sputtering to prepare zinc oxide nanowire in conjunction with thermal oxidation method; Silicon nano hole column substrate is put in magnetic control sputtering device, when sputtering voltage 210V, sputtering current 0.5A, magnetron sputtering Zn film, thickness is 30nm, putting it into subsequently in batch-type furnace, at 400 DEG C, thermal oxidation method processes 4h, obtains diameter and is about the zinc oxide nanowire of 30nm;
Step 3, grows graphene layer: adopt process for preparing graphenes by chemical vapour deposition; First magnetron sputtering layer of metal Ni film on the substrate that upper step obtains, thickness is about 5nm; Secondly, putting in tube furnace by this substrate, be warming up to 900 DEG C, pass into hydrogen as protection reducing gas by given pace, stablize 30min, then, pass into methane 2h according to a certain percentage simultaneously, stopping starts Temperature fall after passing into methane; Under Ni catalyst action, methane molecule at high temperature can be cracked into carbon atom and hydrogen atom, at temperature-fall period and under the protection of hydrogen, and carbon atom meeting formation of deposits one layer graphene thin film;
Step 4, is deposited with interdigital electrode: after obtaining growing the silicon nano hole column substrate having zinc oxide nanowire and Graphene, covers interdigital electrode mask at substrate surface, utilizes magnetron sputtering method to be deposited with Au thin film thick for one layer of 500nm on its surface as electrode;
Step 5, assembles sensing element and reads data element: the both positive and negative polarity wire reading data element is connected in interdigital electrode, two parts composition Zinc oxide-base moisture sensor device;
Wherein, the preparation method of described polyvinyl alcohol-ethylenediamine tetraacetic methene phosphoric acid-polysulfones basement membrane hollow fiber composite membrane assembly is as follows:
Step one, polysulfone hollow fibre basement membrane pretreatment: polysulfone hollow fibre basement membrane to carry out pretreatment before coating, after soaking 12h with deionized water, with the soak with hydrochloric acid 60min of 1.0mol/l, remove glycerin layer and other organic solvents on film surface; Then use in the sodium hydroxide solution of 1.0mol/l and excessive hydrochloric acid, finally repeatedly rinse with deionized water, make film surface in neutrality, dry in the shade standby;
Step 2, prepare polyvinyl alcohol-ethylenediamine tetraacetic methene phosphoric acid-polysulfone hollow fibre composite membrane: add in deionized water by the polyvinyl alcohol that the average degree of polymerization of certain mass is 1750 �� 50, it is about 3h 50 DEG C of stirred in water bath to be completely dissolved to polyvinyl alcohol, obtains 5wt% polyvinyl alcohol homogeneous phase aqueous solution; Adding a certain amount of ethylenediamine tetraacetic methene phosphoric acid after solution is cooled to room temperature, and at room temperature stir 1.5h, namely standing and defoaming obtains casting solution; Polysulfones basement membrane (molecular cut off 30000) through pretreatment is taken out after casting solution soaks 20min, is vertically fixed on the guide frame that dries in the air and dries in the shade;After the film of primary coating soaks 20min again in casting solution, will reversely be fixed on and dry in the air on guide frame, dry at room temperature over night, prepare required PVA-EDTMPA/PS hollow fiber composite membrane.
Step 3, fixing: polyvinyl alcohol-ethylenediamine tetraacetic methene phosphoric acid-polysulfone hollow fibre composite membrane is fixed in glass electrode.
Wet sensitive is tested:
Zinc oxide-base moisture sensor is put in control appliance of temperature and humidity. Test temperature is set as 20 DEG C, then controls relative humidity variations and ranges for 10%��95%, reads the electric capacity of sensing element with humidity situation of change;
The sensitivity definition of dew cell is: CRH-C11/ C11�� 100%, wherein CRHFor the component capacitance value obtained under test environment humidity, C11Capacitance for 11% time element of relative humidity. Are defined as the response of dew cell or recovery time testing capacitor value and reach the time used by total variation 80% at the variable quantity of 11%RH to 75%RH;
When testing frequency and being 100Hz, under the relative humidity of 15%, 35%, 55%, 75%, 95%, the sensitivity of sensing element respectively 4,35,142,943 and 2451, response and respectively 10s and 12s recovery time, test result shows that this voltage monitoring instrument has good wet sensitive performance, make this voltage monitoring instrument add the detection function of ambient humidity, ensure the use environment of its safety.
Embodiment 3:
A kind of intelligent substation digital voltage monitoring instrument based on Humidity Detection as shown in Figure 1, described voltage monitoring instrument 1 is provided with zno-based moisture sensor module 2; Described zno-based moisture sensor module 2 is mainly made up of wet sensitive sensing element and data read element. As in figure 2 it is shown, described wet sensitive sensing element is interdigital electrode type, it includes silicon chip substrate 10, Si-NPA20, zinc oxide nanowire 30 and graphene layer 40; Described voltage monitoring instrument 1 is additionally provided with microprocessor, LED display lamp bar and wireless communication module; The input of described microprocessor is connected with the outfan of described ZnO moisture sensor module, described ZnO moisture sensor module detected value reaches preset value, described microprocessor controls LED display lamp bar and flashes, described LED display lamp bar is connected to a buzzer, touches buzzer and send alarm while the flicker of LED display lamp bar; Described wireless communication module is CC2420 wireless communication module, described ZnO moisture sensor module can by described CC2420 wireless communication module transmission detection data to data basestation, by the Internet, mobile subscriber terminal can check that detection data are maybe uploaded to cloud storage center by testing result, form detection and monitoring network; The output electric wire sidewall of described voltage monitoring instrument is provided with a polyvinyl alcohol for dehumidification-ethylenediamine tetraacetic methene phosphoric acid-polysulfones basement membrane hollow fiber composite membrane assembly, polyvinyl alcohol-ethylenediamine tetraacetic methene phosphoric acid-polysulfones basement membrane hollow fiber composite membrane is fixed in glass electrode by this membrane module, and glass electrode is connected with moisture sensor; Described zinc oxide nanowire 30 length about 34 ��m.
Preferably, the preparation method of described wet sensitive sensing element is as follows:
Step one, prepares Si-NPA substrate: the silicon chip substrate of 3cm �� 3cm is included clean dirt, hydro-thermal method corrosion preparation Si-NPA substrate; 1. take the silicon chip of 3cm �� 3cm, silicon chip is placed in the mixed solution of sulphuric acid and hydrogen peroxide volume ratio 4:3, supersound process 20min, taking-up deionized water cleans, to remove the organic impurities of silicon chip surface; It is H that silicon chip is positioned over volume ratio2O:H2O2: NH4In the mixed solution of OH=5:2:1, ultrasonic cleaning 20min, the deionized water of taking-up subsequently cleans, to remove Organic substance and the metal complex of silicon chip surface;2. hydro-thermal method corrosion is utilized to prepare Si-NPA: to weigh the Fe (NO of 1.0g3)��9H2O pours in politef, is added thereto to the HF solution of 20ml deionized water and 60ml40% subsequently; Putting in solution by the silicon chip that upper step is cleaned, add a cover and put in water heating kettle, put in drying baker by water heating kettle subsequently, 180 DEG C of constant temperature keep 30min, after natural cooling, take out Wafer Cleaning and namely obtain Si-NPA substrate;
Step 2, growth of zinc oxide nano line: adopt magnetron sputtering to prepare zinc oxide nanowire in conjunction with thermal oxidation method; Silicon nano hole column substrate is put in magnetic control sputtering device, when sputtering voltage 180V, sputtering current 0.8A, magnetron sputtering Zn film, thickness is 50nm, putting it into subsequently in batch-type furnace, at 400 DEG C, thermal oxidation method processes 2h, obtains diameter and is about the zinc oxide nanowire of 60nm;
Step 3, grows graphene layer: adopt process for preparing graphenes by chemical vapour deposition; First magnetron sputtering layer of metal Ni film on the substrate that upper step obtains, thickness is about 5nm; Secondly, putting in tube furnace by this substrate, be warming up to 900 DEG C, pass into hydrogen as protection reducing gas by given pace, stablize 30min, then, pass into methane 2h according to a certain percentage simultaneously, stopping starts Temperature fall after passing into methane; Under Ni catalyst action, methane molecule at high temperature can be cracked into carbon atom and hydrogen atom, at temperature-fall period and under the protection of hydrogen, and carbon atom meeting formation of deposits one layer graphene thin film;
Step 4, is deposited with interdigital electrode: after obtaining growing the silicon nano hole column substrate having zinc oxide nanowire and Graphene, covers interdigital electrode mask at substrate surface, utilizes magnetron sputtering method to be deposited with Au thin film thick for one layer of 500nm on its surface as electrode;
Step 5, assembles sensing element and reads data element: the both positive and negative polarity wire reading data element is connected in interdigital electrode, two parts composition Zinc oxide-base moisture sensor device;
Wherein, the preparation method of described polyvinyl alcohol-ethylenediamine tetraacetic methene phosphoric acid-polysulfones basement membrane hollow fiber composite membrane assembly is as follows:
Step one, polysulfone hollow fibre basement membrane pretreatment: polysulfone hollow fibre basement membrane to carry out pretreatment before coating, after soaking 12h with deionized water, with the soak with hydrochloric acid 60min of 1.0mol/l, remove glycerin layer and other organic solvents on film surface; Then use in the sodium hydroxide solution of 1.0mol/l and excessive hydrochloric acid, finally repeatedly rinse with deionized water, make film surface in neutrality, dry in the shade standby;
Step 2, prepare polyvinyl alcohol-ethylenediamine tetraacetic methene phosphoric acid-polysulfone hollow fibre composite membrane: add in deionized water by the polyvinyl alcohol that the average degree of polymerization of certain mass is 1750 �� 50, it is about 3h 50 DEG C of stirred in water bath to be completely dissolved to polyvinyl alcohol, obtains 5wt% polyvinyl alcohol homogeneous phase aqueous solution; Adding a certain amount of ethylenediamine tetraacetic methene phosphoric acid after solution is cooled to room temperature, and at room temperature stir 1.5h, namely standing and defoaming obtains casting solution; Polysulfones basement membrane (molecular cut off 30000) through pretreatment is taken out after casting solution soaks 20min, is vertically fixed on the guide frame that dries in the air and dries in the shade; After the film of primary coating soaks 20min again in casting solution, will reversely be fixed on and dry in the air on guide frame, dry at room temperature over night, prepare required PVA-EDTMPA/PS hollow fiber composite membrane.
Step 3, fixing: polyvinyl alcohol-ethylenediamine tetraacetic methene phosphoric acid-polysulfone hollow fibre composite membrane is fixed in glass electrode.
Wet sensitive is tested:
Zinc oxide-base moisture sensor is put in control appliance of temperature and humidity.Test temperature is set as 20 DEG C, then controls relative humidity variations and ranges for 10%��95%, reads the electric capacity of sensing element with humidity situation of change;
The sensitivity definition of dew cell is: CRH-C11/ C11�� 100%, wherein CRHFor the component capacitance value obtained under test environment humidity, C11Capacitance for 11% time element of relative humidity. Are defined as the response of dew cell or recovery time testing capacitor value and reach the time used by total variation 80% at the variable quantity of 11%RH to 75%RH;
When testing frequency and being 100Hz, under the relative humidity of 15%, 35%, 55%, 75%, 95%, the sensitivity of sensing element respectively 4,31,138,853 and 1952, response and respectively 12s and 13s recovery time, test result shows that this voltage monitoring instrument has good wet sensitive performance, make this voltage monitoring instrument add the detection function of ambient humidity, ensure the use environment of its safety.
Embodiment 4
A kind of intelligent substation digital voltage monitoring instrument based on Humidity Detection as shown in Figure 1, described voltage monitoring instrument 1 is provided with zno-based moisture sensor module 2; Described zno-based moisture sensor module 2 is mainly made up of wet sensitive sensing element and data read element. As in figure 2 it is shown, described wet sensitive sensing element is interdigital electrode type, it includes silicon chip substrate 10, Si-NPA20, zinc oxide nanowire 30 and graphene layer 40; Described voltage monitoring instrument 1 is additionally provided with microprocessor, LED display lamp bar and wireless communication module; The input of described microprocessor is connected with the outfan of described ZnO moisture sensor module, described ZnO moisture sensor module detected value reaches preset value, described microprocessor controls LED display lamp bar and flashes, described LED display lamp bar is connected to a buzzer, touches buzzer and send alarm while the flicker of LED display lamp bar; Described wireless communication module is CC2420 wireless communication module, described ZnO moisture sensor module can by described CC2420 wireless communication module transmission detection data to data basestation, by the Internet, mobile subscriber terminal can check that detection data are maybe uploaded to cloud storage center by testing result, form detection and monitoring network; The output electric wire sidewall of described voltage monitoring instrument is provided with a polyvinyl alcohol for dehumidification-ethylenediamine tetraacetic methene phosphoric acid-polysulfones basement membrane hollow fiber composite membrane assembly, polyvinyl alcohol-ethylenediamine tetraacetic methene phosphoric acid-polysulfones basement membrane hollow fiber composite membrane is fixed in glass electrode by this membrane module, and glass electrode is connected with moisture sensor; Described zinc oxide nanowire 30 length about 36 ��m.
Preferably, the preparation method of described wet sensitive sensing element is as follows:
Step one, prepares Si-NPA substrate: the silicon chip substrate of 3cm �� 3cm is included clean dirt, hydro-thermal method corrosion preparation Si-NPA substrate; 1. take the silicon chip of 3cm �� 3cm, silicon chip is placed in the mixed solution of sulphuric acid and hydrogen peroxide volume ratio 4:1, supersound process 20min, taking-up deionized water cleans, to remove the organic impurities of silicon chip surface; It is H that silicon chip is positioned over volume ratio2O:H2O2: NH4In the mixed solution of OH=5:2:1, ultrasonic cleaning 50min, the deionized water of taking-up subsequently cleans, to remove Organic substance and the metal complex of silicon chip surface; 2. hydro-thermal method corrosion is utilized to prepare Si-NPA: to weigh the Fe (NO of 1.0g3)��9H2O pours in politef, is added thereto to the HF solution of 20ml deionized water and 30ml40% subsequently;Putting in solution by the silicon chip that upper step is cleaned, add a cover and put in water heating kettle, put in drying baker by water heating kettle subsequently, 180 DEG C of constant temperature keep 30min, after natural cooling, take out Wafer Cleaning and namely obtain Si-NPA substrate;
Step 2, growth of zinc oxide nano line: adopt magnetron sputtering to prepare zinc oxide nanowire in conjunction with thermal oxidation method; Silicon nano hole column substrate is put in magnetic control sputtering device, when sputtering voltage 220V, sputtering current 2.9A, magnetron sputtering Zn film, thickness is 50nm, putting it into subsequently in batch-type furnace, at 400 DEG C, thermal oxidation method processes 4h, obtains diameter and is about the zinc oxide nanowire of 37nm;
Step 3, grows graphene layer: adopt process for preparing graphenes by chemical vapour deposition; First magnetron sputtering layer of metal Ni film on the substrate that upper step obtains, thickness is about 9nm; Secondly, putting in tube furnace by this substrate, be warming up to 900 DEG C, pass into hydrogen as protection reducing gas by given pace, stablize 30min, then, pass into methane 2h according to a certain percentage simultaneously, stopping starts Temperature fall after passing into methane; Under Ni catalyst action, methane molecule at high temperature can be cracked into carbon atom and hydrogen atom, at temperature-fall period and under the protection of hydrogen, and carbon atom meeting formation of deposits one layer graphene thin film;
Step 4, is deposited with interdigital electrode: after obtaining growing the silicon nano hole column substrate having zinc oxide nanowire and Graphene, covers interdigital electrode mask at substrate surface, utilizes magnetron sputtering method to be deposited with Au thin film thick for one layer of 500nm on its surface as electrode;
Step 5, assembles sensing element and reads data element: the both positive and negative polarity wire reading data element is connected in interdigital electrode, two parts composition Zinc oxide-base moisture sensor device;
Wherein, the preparation method of described polyvinyl alcohol-ethylenediamine tetraacetic methene phosphoric acid-polysulfones basement membrane hollow fiber composite membrane assembly is as follows:
Step one, polysulfone hollow fibre basement membrane pretreatment: polysulfone hollow fibre basement membrane to carry out pretreatment before coating, after soaking 12h with deionized water, with the soak with hydrochloric acid 60min of 1.0mol/l, remove glycerin layer and other organic solvents on film surface; Then use in the sodium hydroxide solution of 1.0mol/l and excessive hydrochloric acid, finally repeatedly rinse with deionized water, make film surface in neutrality, dry in the shade standby;
Step 2, prepare polyvinyl alcohol-ethylenediamine tetraacetic methene phosphoric acid-polysulfone hollow fibre composite membrane: add in deionized water by the polyvinyl alcohol that the average degree of polymerization of certain mass is 1750 �� 50, it is about 3h 50 DEG C of stirred in water bath to be completely dissolved to polyvinyl alcohol, obtains 5wt% polyvinyl alcohol homogeneous phase aqueous solution; Adding a certain amount of ethylenediamine tetraacetic methene phosphoric acid after solution is cooled to room temperature, and at room temperature stir 1.5h, namely standing and defoaming obtains casting solution; Polysulfones basement membrane (molecular cut off 30000) through pretreatment is taken out after casting solution soaks 20min, is vertically fixed on the guide frame that dries in the air and dries in the shade; After the film of primary coating soaks 20min again in casting solution, will reversely be fixed on and dry in the air on guide frame, dry at room temperature over night, prepare required PVA-EDTMPA/PS hollow fiber composite membrane.
Step 3, fixing: polyvinyl alcohol-ethylenediamine tetraacetic methene phosphoric acid-polysulfone hollow fibre composite membrane is fixed in glass electrode.
Wet sensitive is tested:
Zinc oxide-base moisture sensor is put in control appliance of temperature and humidity. Test temperature is set as 20 DEG C, then controls relative humidity variations and ranges for 10%��95%, reads the electric capacity of sensing element with humidity situation of change;
The sensitivity definition of dew cell is: CRH-C11/ C11�� 100%, wherein CRHFor the component capacitance value obtained under test environment humidity, C11Capacitance for 11% time element of relative humidity. Are defined as the response of dew cell or recovery time testing capacitor value and reach the time used by total variation 80% at the variable quantity of 11%RH to 75%RH;
When testing frequency and being 100Hz, under the relative humidity of 15%, 35%, 55%, 75%, 95%, the sensitivity of sensing element respectively 4,28,128,908 and 4532, response and respectively 12s and 13s recovery time, test result shows that this voltage monitoring instrument has good wet sensitive performance, make this voltage monitoring instrument add the detection function of ambient humidity, ensure the use environment of its safety.
Embodiment 5
A kind of intelligent substation digital voltage monitoring instrument based on Humidity Detection as shown in Figure 1, described voltage monitoring instrument 1 is provided with zno-based moisture sensor module 2; Described zno-based moisture sensor module 2 is mainly made up of wet sensitive sensing element and data read element. As in figure 2 it is shown, described wet sensitive sensing element is interdigital electrode type, it includes silicon chip substrate 10, Si-NPA20, zinc oxide nanowire 30 and graphene layer 40; Described voltage monitoring instrument 1 is additionally provided with microprocessor, LED display lamp bar and wireless communication module; The input of described microprocessor is connected with the outfan of described ZnO moisture sensor module, described ZnO moisture sensor module detected value reaches preset value, described microprocessor controls LED display lamp bar and flashes, described LED display lamp bar is connected to a buzzer, touches buzzer and send alarm while the flicker of LED display lamp bar; Described wireless communication module is CC2420 wireless communication module, described ZnO moisture sensor module can by described CC2420 wireless communication module transmission detection data to data basestation, by the Internet, mobile subscriber terminal can check that detection data are maybe uploaded to cloud storage center by testing result, form detection and monitoring network; The output electric wire sidewall of described voltage monitoring instrument is provided with a polyvinyl alcohol for dehumidification-ethylenediamine tetraacetic methene phosphoric acid-polysulfones basement membrane hollow fiber composite membrane assembly, polyvinyl alcohol-ethylenediamine tetraacetic methene phosphoric acid-polysulfones basement membrane hollow fiber composite membrane is fixed in glass electrode by this membrane module, and glass electrode is connected with moisture sensor; Described zinc oxide nanowire 30 length about 5 ��m.
Preferably, the preparation method of described wet sensitive sensing element is as follows:
Step one, prepares Si-NPA substrate: the silicon chip substrate of 3cm �� 3cm is included clean dirt, hydro-thermal method corrosion preparation Si-NPA substrate; 1. take the silicon chip of 3cm �� 3cm, silicon chip is placed in the mixed solution of sulphuric acid and hydrogen peroxide volume ratio 4:1, supersound process 20min, taking-up deionized water cleans, to remove the organic impurities of silicon chip surface; It is H that silicon chip is positioned over volume ratio2O:H2O2: NH4In the mixed solution of OH=5:2:1, ultrasonic cleaning 20min, the deionized water of taking-up subsequently cleans, to remove Organic substance and the metal complex of silicon chip surface; 2. hydro-thermal method corrosion is utilized to prepare Si-NPA: to weigh the Fe (NO of 1.0g3)��9H2O pours in politef, is added thereto to the HF solution of 20ml deionized water and 30ml60% subsequently; Putting in solution by the silicon chip that upper step is cleaned, add a cover and put in water heating kettle, put in drying baker by water heating kettle subsequently, 180 DEG C of constant temperature keep 30min, after natural cooling, take out Wafer Cleaning and namely obtain Si-NPA substrate;
Step 2, growth of zinc oxide nano line: adopt magnetron sputtering to prepare zinc oxide nanowire in conjunction with thermal oxidation method; Silicon nano hole column substrate is put in magnetic control sputtering device, when sputtering voltage 120V, sputtering current 0.8A, magnetron sputtering Zn film, thickness is 50nm, putting it into subsequently in batch-type furnace, at 400 DEG C, thermal oxidation method processes 4h, obtains diameter and is about the zinc oxide nanowire of 30nm;
Step 3, grows graphene layer: adopt process for preparing graphenes by chemical vapour deposition; First magnetron sputtering layer of metal Ni film on the substrate that upper step obtains, thickness is about 5nm; Secondly, putting in tube furnace by this substrate, be warming up to 700 DEG C, pass into hydrogen as protection reducing gas by given pace, stablize 30min, then, pass into methane 2h according to a certain percentage simultaneously, stopping starts Temperature fall after passing into methane; Under Ni catalyst action, methane molecule at high temperature can be cracked into carbon atom and hydrogen atom, at temperature-fall period and under the protection of hydrogen, and carbon atom meeting formation of deposits one layer graphene thin film;
Step 4, is deposited with interdigital electrode: after obtaining growing the silicon nano hole column substrate having zinc oxide nanowire and Graphene, covers interdigital electrode mask at substrate surface, utilizes magnetron sputtering method to be deposited with Au thin film thick for one layer of 500nm on its surface as electrode;
Step 5, assembles sensing element and reads data element: the both positive and negative polarity wire reading data element is connected in interdigital electrode, two parts composition Zinc oxide-base moisture sensor device;
Wherein, the preparation method of described polyvinyl alcohol-ethylenediamine tetraacetic methene phosphoric acid-polysulfones basement membrane hollow fiber composite membrane assembly is as follows:
Step one, polysulfone hollow fibre basement membrane pretreatment: polysulfone hollow fibre basement membrane to carry out pretreatment before coating, after soaking 12h with deionized water, with the soak with hydrochloric acid 60min of 1.5mol/l, remove glycerin layer and other organic solvents on film surface; Then use in the sodium hydroxide solution of 1.0mol/l and excessive hydrochloric acid, finally repeatedly rinse with deionized water, make film surface in neutrality, dry in the shade standby;
Step 2, prepare polyvinyl alcohol-ethylenediamine tetraacetic methene phosphoric acid-polysulfone hollow fibre composite membrane: add in deionized water by the polyvinyl alcohol that the average degree of polymerization of certain mass is 1750 �� 50, it is about 3h 50 DEG C of stirred in water bath to be completely dissolved to polyvinyl alcohol, obtains 5wt% polyvinyl alcohol homogeneous phase aqueous solution; Adding a certain amount of ethylenediamine tetraacetic methene phosphoric acid after solution is cooled to room temperature, and at room temperature stir 1.5h, namely standing and defoaming obtains casting solution; Polysulfones basement membrane (molecular cut off 30000) through pretreatment is taken out after casting solution soaks 20min, is vertically fixed on the guide frame that dries in the air and dries in the shade; After the film of primary coating soaks 20min again in casting solution, will reversely be fixed on and dry in the air on guide frame, dry at room temperature over night, prepare required PVA-EDTMPA/PS hollow fiber composite membrane.
Step 3, fixing: polyvinyl alcohol-ethylenediamine tetraacetic methene phosphoric acid-polysulfone hollow fibre composite membrane is fixed in glass electrode.
Wet sensitive is tested:
Zinc oxide-base moisture sensor is put in control appliance of temperature and humidity. Test temperature is set as 20 DEG C, then controls relative humidity variations and ranges for 10%��95%, reads the electric capacity of sensing element with humidity situation of change;
The sensitivity definition of dew cell is: CRH-C11/ C11�� 100%, wherein CRHFor the component capacitance value obtained under test environment humidity, C11Capacitance for 11% time element of relative humidity.Are defined as the response of dew cell or recovery time testing capacitor value and reach the time used by total variation 80% at the variable quantity of 11%RH to 75%RH;
When testing frequency and being 100Hz, under the relative humidity of 15%, 35%, 55%, 75%, 95%, the sensitivity of sensing element respectively 4,21,343,488 and 1932, response and respectively 15s and 17s recovery time, test result shows that this voltage monitoring instrument has good wet sensitive performance, make this voltage monitoring instrument add the detection function of ambient humidity, ensure the use environment of its safety.
Finally should be noted that; above example is only in order to illustrate technical scheme; but not limiting the scope of the invention; although having made to explain to the present invention with reference to preferred embodiment; it will be understood by those within the art that; technical scheme can be modified or equivalent replacement, without deviating from the spirit and scope of technical solution of the present invention.

Claims (2)

1. the intelligent substation digital voltage monitoring instrument based on Humidity Detection, it is characterised in that: described voltage monitoring instrument (1) is provided with zno-based moisture sensor module (2); Described zno-based moisture sensor module (2) is mainly made up of wet sensitive sensing element and data read element, described wet sensitive sensing element is interdigital electrode type, including silicon chip substrate (10), Si NPA (20), zinc oxide nanowire (30) and graphene layer (40); Described voltage monitoring instrument (1) is additionally provided with microprocessor, LED display lamp bar and wireless communication module; The input of described microprocessor is connected with the outfan of described ZnO moisture sensor module (2), described ZnO moisture sensor module (2) detected value reaches preset value, described microprocessor controls LED display lamp bar and flashes, described LED display lamp bar is connected to a buzzer, touches buzzer and send alarm while the flicker of LED display lamp bar; Described wireless communication module is CC2420 wireless communication module, described ZnO moisture sensor module (2) can by described CC2420 wireless communication module transmission detection data to data basestation, by the Internet, mobile subscriber terminal can check that detection data are maybe uploaded to cloud storage center by testing result, form detection and monitoring network; The output electric wire sidewall of described voltage monitoring instrument (1) is provided with a polyvinyl alcohol ethylenediamine tetraacetic methene phosphoric acid polysulfones basement membrane hollow fiber composite membrane assembly for dehumidification, polyvinyl alcohol ethylenediamine tetraacetic methene phosphoric acid polysulfones basement membrane hollow fiber composite membrane is fixed in glass electrode by this membrane module, and glass electrode is connected with moisture sensor; Described zinc oxide nanowire (30) length about 33 ��m.
2. voltage monitoring instrument according to claim 1, it is characterised in that the preparation method of described wet sensitive sensing element is as follows:
Step one, prepares Si NPA substrate: the silicon chip substrate (10) of 3cm �� 3cm is included clean dirt, hydro-thermal method corrosion preparation Si NPA substrate; 1. take the silicon chip of 3cm �� 3cm, silicon chip is placed in the mixed solution of sulphuric acid and hydrogen peroxide volume ratio 4:1, supersound process 20min, taking-up deionized water cleans, to remove the organic impurities of silicon chip surface; It is H that silicon chip is positioned over volume ratio2O:H2O2: NH4In the mixed solution of OH=5:2:1, ultrasonic cleaning 20min, the deionized water of taking-up subsequently cleans, to remove Organic substance and the metal complex of silicon chip surface; 2. hydro-thermal method corrosion is utilized to prepare Si NPA: to weigh the Fe (NO of 1.0g3)��9H2O pours in politef, is added thereto to the HF solution of 20ml deionized water and 30ml40% subsequently;Putting in solution by the silicon chip that upper step is cleaned, add a cover and put in water heating kettle, put in drying baker by water heating kettle subsequently, 180 DEG C of constant temperature keep 30min, after natural cooling, take out Wafer Cleaning and namely obtain Si NPA substrate;
Step 2, growth of zinc oxide nano line: adopt magnetron sputtering to prepare zinc oxide nanowire in conjunction with thermal oxidation method; Silicon nano hole column substrate is put in magnetic control sputtering device, when sputtering voltage 220V, sputtering current 0.8A, magnetron sputtering Zn film, thickness is 50nm, putting it into subsequently in batch-type furnace, at 400 DEG C, thermal oxidation method processes 4h, obtains diameter and is about the zinc oxide nanowire of 30nm;
Step 3, grows graphene layer: adopt process for preparing graphenes by chemical vapour deposition; First magnetron sputtering layer of metal Ni film on the substrate that upper step obtains, thickness is about 5nm; Secondly, putting in tube furnace by this substrate, be warming up to 900 DEG C, pass into hydrogen as protection reducing gas by given pace, stablize 30min, then, pass into methane 2h according to a certain percentage simultaneously, stopping starts Temperature fall after passing into methane; Under Ni catalyst action, methane molecule at high temperature can be cracked into carbon atom and hydrogen atom, at temperature-fall period and under the protection of hydrogen, and carbon atom meeting formation of deposits one layer graphene thin film;
Step 4, is deposited with interdigital electrode: after obtaining growing the silicon nano hole column substrate having zinc oxide nanowire and Graphene, covers interdigital electrode mask at substrate surface, utilizes magnetron sputtering method to be deposited with Au thin film thick for one layer of 500nm on its surface as electrode;
Step 5, assembles sensing element and reads data element: the both positive and negative polarity wire reading data element is connected in interdigital electrode, two parts composition Zinc oxide-base moisture sensor device;
The preparation method of described polyvinyl alcohol-ethylenediamine tetraacetic methene phosphoric acid-polysulfones basement membrane hollow fiber composite membrane assembly is as follows:
Step one, polysulfone hollow fibre basement membrane pretreatment: polysulfone hollow fibre basement membrane to carry out pretreatment before coating, after soaking 12h with deionized water, with the soak with hydrochloric acid 60min of 1.0mol/l, remove glycerin layer and other organic solvents on film surface; Then use in the sodium hydroxide solution of 1.0mol/l and excessive hydrochloric acid, finally repeatedly rinse with deionized water, make film surface in neutrality, dry in the shade standby;
Step 2, prepare polyvinyl alcohol-ethylenediamine tetraacetic methene phosphoric acid-polysulfone hollow fibre composite membrane: add in deionized water by the polyvinyl alcohol that the average degree of polymerization of certain mass is 1750 �� 50, it is about 3h 50 DEG C of stirred in water bath to be completely dissolved to polyvinyl alcohol, obtains 5wt% polyvinyl alcohol homogeneous phase aqueous solution; Adding a certain amount of ethylenediamine tetraacetic methene phosphoric acid after solution is cooled to room temperature, and at room temperature stir 1.5h, namely standing and defoaming obtains casting solution; Polysulfones basement membrane (molecular cut off 30000) through pretreatment is taken out after casting solution soaks 20min, is vertically fixed on the guide frame that dries in the air and dries in the shade; After the film of primary coating soaks 20min again in casting solution, will reversely be fixed on and dry in the air on guide frame, dry at room temperature over night, prepare required PVA-EDTMPA/PS hollow fiber composite membrane.
Step 3, fixing: polyvinyl alcohol-ethylenediamine tetraacetic methene phosphoric acid-polysulfone hollow fibre composite membrane is fixed in glass electrode.
CN201610070306.3A 2016-01-29 2016-01-29 Digital voltage monitor of intelligent transformer substation based on humidity detection Pending CN105652069A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113219050A (en) * 2021-07-07 2021-08-06 湖南大学 Ultra-high sensitivity surface acoustic wave humidity sensor

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57156553A (en) * 1981-03-24 1982-09-27 Toshiba Corp Humidity sensitive element
CN101259381A (en) * 2007-12-19 2008-09-10 天津大学 Hollow fiber compound film, preparation and application
CN204789450U (en) * 2015-07-16 2015-11-18 吕银兰 Humidity detection alarm device based on zigbee

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57156553A (en) * 1981-03-24 1982-09-27 Toshiba Corp Humidity sensitive element
CN101259381A (en) * 2007-12-19 2008-09-10 天津大学 Hollow fiber compound film, preparation and application
CN204789450U (en) * 2015-07-16 2015-11-18 吕银兰 Humidity detection alarm device based on zigbee

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
ZHENYUAN ET AL.: "Enhanced humidity-sensing properties of novel grapheme oxide/zinc oxide nanoparticles layered thin film QCM sensor", 《MATERIALS LETTERS》 *
王文闯: "ZnO基传感器的气敏和湿敏特性研究", 《中国博士学位论文全文数据库信息科技辑》 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113219050A (en) * 2021-07-07 2021-08-06 湖南大学 Ultra-high sensitivity surface acoustic wave humidity sensor

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