CN105737993B - 一种可调谐微测辐射热计像元结构及像元阵列 - Google Patents
一种可调谐微测辐射热计像元结构及像元阵列 Download PDFInfo
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- CN105737993B CN105737993B CN201610072757.0A CN201610072757A CN105737993B CN 105737993 B CN105737993 B CN 105737993B CN 201610072757 A CN201610072757 A CN 201610072757A CN 105737993 B CN105737993 B CN 105737993B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J2005/0077—Imaging
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
- G01J2005/202—Arrays
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CN201610072757.0A CN105737993B (zh) | 2016-02-02 | 2016-02-02 | 一种可调谐微测辐射热计像元结构及像元阵列 |
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CN105737993A CN105737993A (zh) | 2016-07-06 |
CN105737993B true CN105737993B (zh) | 2019-04-26 |
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Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106564854B (zh) * | 2016-10-31 | 2018-08-03 | 武汉高芯科技有限公司 | 双层微桥结构以及微测辐射热计 |
JP6726087B2 (ja) * | 2016-12-14 | 2020-07-22 | 浜松ホトニクス株式会社 | 光検出器 |
CN106672893B (zh) * | 2016-12-29 | 2019-01-22 | 深圳先进技术研究院 | 可调谐滤波器以及可调谐滤波器阵列 |
CN106737567B (zh) * | 2017-02-22 | 2019-04-12 | 西安交通大学 | 一种基于介电弹性体谐振器驱动的超轻质机器人 |
CN108358158B (zh) * | 2017-12-19 | 2020-08-11 | 武汉高芯科技有限公司 | 一种晶圆级封装结构、制备方法及其吸气剂的激活方法 |
CN109297608B (zh) * | 2018-09-19 | 2019-09-10 | 北京科技大学 | 基于掺杂钛酸锶基氧化物的微区热扰动双向锁定探测方法 |
CN110118604B (zh) * | 2019-05-30 | 2020-03-13 | 中国科学院长春光学精密机械与物理研究所 | 基于混合谐振模式的宽光谱微测辐射热计及其制备方法 |
FR3097047B1 (fr) * | 2019-06-05 | 2021-05-14 | Lynred | Microbolomètre muni d’une fonction de filtrage |
FR3097046B1 (fr) * | 2019-06-05 | 2021-05-21 | Lynred | Microbolomètre ayant un pas de pixel réduit |
CN110323240B (zh) * | 2019-07-05 | 2022-03-15 | 电子科技大学 | 一种可拼接红外微桥结构电阻矩阵 |
CN113720476B (zh) * | 2021-03-26 | 2023-01-10 | 北京北方高业科技有限公司 | 基于cmos工艺的红外探测器镜像像元和红外探测器 |
CN113720473B (zh) * | 2021-03-26 | 2022-10-11 | 北京北方高业科技有限公司 | 一种基于cmos工艺的红外探测器 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101713688A (zh) * | 2009-12-11 | 2010-05-26 | 中国电子科技集团公司第十三研究所 | 一种mems非制冷双波段红外探测器及其制备方法 |
US7750301B1 (en) * | 2007-10-02 | 2010-07-06 | Flir Systems, Inc. | Microbolometer optical cavity tuning and calibration systems and methods |
CN102226721A (zh) * | 2011-04-06 | 2011-10-26 | 电子科技大学 | 一种非制冷红外探测焦平面器件 |
CN102538982A (zh) * | 2010-12-17 | 2012-07-04 | 原子能与替代能源委员会 | 基于悬吊测辐射热微板的红外检测器 |
CN202599535U (zh) * | 2012-03-27 | 2012-12-12 | 武汉高德红外股份有限公司 | 可调式基于mems滤波的红外探测器 |
CN103293660A (zh) * | 2013-05-31 | 2013-09-11 | 华中科技大学 | 一种微型f-p腔可调谐滤波器及其制备方法 |
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2016
- 2016-02-02 CN CN201610072757.0A patent/CN105737993B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7750301B1 (en) * | 2007-10-02 | 2010-07-06 | Flir Systems, Inc. | Microbolometer optical cavity tuning and calibration systems and methods |
CN101713688A (zh) * | 2009-12-11 | 2010-05-26 | 中国电子科技集团公司第十三研究所 | 一种mems非制冷双波段红外探测器及其制备方法 |
CN102538982A (zh) * | 2010-12-17 | 2012-07-04 | 原子能与替代能源委员会 | 基于悬吊测辐射热微板的红外检测器 |
CN102226721A (zh) * | 2011-04-06 | 2011-10-26 | 电子科技大学 | 一种非制冷红外探测焦平面器件 |
CN202599535U (zh) * | 2012-03-27 | 2012-12-12 | 武汉高德红外股份有限公司 | 可调式基于mems滤波的红外探测器 |
CN103293660A (zh) * | 2013-05-31 | 2013-09-11 | 华中科技大学 | 一种微型f-p腔可调谐滤波器及其制备方法 |
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Denomination of invention: A pixel structure and pixel array of tunable microbolometer Effective date of registration: 20230113 Granted publication date: 20190426 Pledgee: Yantai Branch of China Merchants Bank Co.,Ltd. Pledgor: YANTAI RAYTRON TECHNOLOGY Co.,Ltd. Registration number: Y2023980031039 |
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