CN105723532A - 具有受保护的集成电路连接体的鲁棒超声换能器探头 - Google Patents
具有受保护的集成电路连接体的鲁棒超声换能器探头 Download PDFInfo
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Abstract
一种超声探头,被形成为具有受保护的连接体,从而实现更鲁棒的探头。所述连接体被安装在换能器的阵列与集成电路之间。换能器元件的阵列经由倒装突起或其他结构耦合到所述连接体。底部填充材料固定地将所述连接体定位到所述集成电路。提供了一种制作所述换能器阵列的方法。
Description
技术领域
本发明涉及医学诊断超声,并且具体而言涉及超声换能器阵列堆叠中的连接体的安装。
背景技术
二维阵列换能器用在超声成像中以在三维中电子地扫描。二维阵列在方位和仰角方向两者上具有换能器元件的许多行和列,这将需要大量的线缆导体来在探头的许多元件和主机超声系统之间耦合信号。用于将探头线缆中的信号导体的数量最小化的优选技术是在微波束形成器ASIC(专用集成电路)中的探头中执行波束形成中的至少一些。该技术需要仅相对很少数量的部分波束形成的信号被耦合到主机超声系统,从而减少线缆中所需的信号导体的数量。然而,必须在二维阵列与微波束形成器ASIC之间实现大量信号连接,针对阵列的每个元件一个连接。制作这些连接的有效的方式是将换能器阵列和ASIC设计为具有倒装连接体,其中,换能器阵列的电极焊盘(pad)是直接接合到ASIC的对应的导电焊盘的突起。在一种类型的二维超声换能器设计中,阵列的全部换能器经由使用导电突起的“倒装”技术附接到并且个体地电连接到集成电路(IC)的表面。该微波束形成器IC提供诸如用于波束形成、信号放大等的对元件的电控制,并且提供将数千阵列元件接合到超声系统的主机波束形成器的手段。
图1图示了超声换能器的已知设计的一个范例。超声换能器10包括声学元件12的平坦阵列,所述声学元件经由倒装导电突起16耦合到集成电路14的表面。倒装底部填充材料18被包括在集成电路14与声学元件12的平坦阵列之间的区域内,围绕倒装导电突起16。换能器10还包括换能器基座20和互连线缆22。互连线缆22连接集成电路14和外部线缆(未示出)。集成电路14使用诸如线接合部24的连接体而被电耦合到互连线缆22。
诸如线接合部24的连接体被用于将功率和信号发送到集成电路和从集成电路发送功率和信号。遗憾的是,连接体接近于换能器的透镜,从而使得它们易受损坏、间歇和/或断开影响。一些方法已经用于减少这些问题,其包括使用在连接体上硬化的粘合滴剂将线接合部固着(staking)到集成电路。然而,所述固着增加制造过程的复杂度。不使用固着的其他技术包括将覆盖结构定位为从声学堆叠的顶部延伸并且在连接体上面。问题是,覆盖结构能够弯曲并且随时间变得弱。
存在对用于在对超声系统的制造和使用期间可靠保护连接体的改进的结构和方法。
发明内容
根据本发明的原理,提供了一种具有受保护的连接体的超声探头。所述连接体安装在换能器元件的阵列与用于所述换能器元件的集成电路之间,其中,连接点上方的声学堆叠的突出物保护连接体。底部填充材料相对于集成电路固定定位所述连接体。这些特征实现更加鲁棒的探头结构。
附图说明
在附图中:
图1是常规超声传感器的透视视图。
图2图示了根据本发明的原理构建的声学堆叠。
图3图示了在图2的声学堆叠中的切割的声学元件。
图4图示了当组装在具有透镜覆盖的换能器探头中时的图2的声学堆叠。
图5是根据本发明的原理的具有将连接体覆盖的一个声学层的声学堆叠。
图6图示了根据本发明的原理的包括线接合部和消减地创建的突起的声学堆叠。
图7图示了根据本发明的原理的包括柔性电路和消减地创建的突起的声学堆叠。
图8提供了根据本发明的原理的制作换能器组件中的受保护的连接体的方法。
具体实施方式
本发明的实施方式包括具有换能器元件的阵列的超声换能器阵列组件。换能器元件包括多个层。所述层包括诸如锆钛酸铅(PZT)的压电层,以及匹配层,所述匹配层将压电层的声学阻抗匹配到探头透镜和被成像的身体。金属化层被包括以将压电层电耦合到组件中的集成电路。根据针对换能器阵列的期望特性,也能够包括其他层。集成电路耦合到换能器元件的阵列。集成电路的耦合能够使用倒装技术或者提供集成电路与换能器元件之间的必要电耦合的任何其他合适的技术来执行。如下面将进一步描述的,连接体被定位为与集成电路接触,并且被固定定位在集成电路与阵列中的换能器元件中的层中的至少一层之间。能够根据连接体的尺度来定制集成电路与层之间的空间。例如,如果线接合部连接到集成电路,则可以使用额外的间距。线接合部包括弯曲高度,所述弯曲高度能够提供对集成电路的表面与连接体的点上方的声学堆叠中的层之间的增加的高度的需要。与线接合部相比,柔性电路提供具有较低的高度的概况,并且因此当其被放置在集成电路的表面上时使用较小间距。此外,具有被定位在换能器元件与集成电路之间的空间内的连接体提供更鲁棒的换能器,因为到集成电路的连接体连接被保护免于损坏和/或断开。
图2示意性示出了根据本发明的原理构建的具有受保护的连接体的声学堆叠30。声学堆叠包括多个层32,例如金属化层32a、压电层32b(例如PZT)以及接合到压电层32b的两个声学匹配层32c和32d。匹配层将压电材料的声阻抗匹配被诊断的身体,通常在每个匹配层的声阻抗中的渐进改变的步中。接合到支持块42的集成电路40通过突起34耦合到金属化层32a。被示为柔性电路的连接体38接触集成电路40的一个或多个导体,并且固定地被保持在具有底部填充层36的该位置中。底部填充层能够包括电绝缘材料,例如环氧树脂。
集成电路与声学堆叠之间的连接体的布置提供了若干益处。例如,连接体(例如,柔性电路或线接合部)刚性地被保持就位,使得从对探头的使用产生较少损坏和较少断开。此外,柔性电路能够耦合到集成电路,由填充材料保持就位,并且然后弯曲到探头中的适当电连接所需的任何特定的角度。利用如以上描述的“固着”解决方案,柔性电路的弯曲常常导致粘合剂的位移,并且因此导致连接体的断开。本发明通过在弯曲期间刚性保持所述连接体而解决了该问题。此外,还实现了空间节省,因为连接体还能够朝向集成电路的中心延伸,从而在换能器探头的横向尺度中的占据较少空间。还在垂直方向中实现了更有效的间距,从而在声学堆叠的顶部与探头透镜之间保留更多空间。
除了固定保持集成电路上的连接体外,底部填充提供了各种其他功能。其作用于将集成电路和声学堆叠保持在一起,因为仅突起的连接对于组件的强度而言可能不足够。在一些实施例中,倒装变化需要底部填充能够提供的关节的良好密封。此外,在倒装连接完成之后,进行切割过程,以将声学堆叠分离为个体元件。分离切口需要比声学堆叠的最后层更深,但是并不深至达到IC。底部填充支撑每个个体声学元件。
如图3所示,通过切割切口来切割图2的声学堆叠30,以形成个体换能器元件44a的阵列44,该范例中示出了其中八个。阵列44能够包括换能器元件的单个行(1D阵列),或者在两个正交方向上被切割以形成换能器元件的二维(2D)矩阵阵列。集成电路40,ASIC,提供针对换能器元件44a的发送信号,并且接收并处理来自元件的信号。集成电路40的上表面上的导电焊盘通过柱形突起34电耦合到换能器元件的底部上的导电焊盘,所述柱形突起可以由焊锡或者导电环氧树脂形成。通过到柔性电路38的连接将信号提供到集成电路40和从集成电路40提供信号。集成电路40下面是支持块42,所述支持块从换能器堆叠的底部产生的声学能量进行衰减,并且将由集成电路生成的热量传导离开集成电路和换能器堆叠,并且离开换能器探头的患者接触端。能够使用各种支持块,包括包含填充有树脂的多孔泡沫材料的支持块,如Sudol等人的WO2012/123908中公开的,通过引用将其并入本文。在图2和图3中看到,在该实施方式中的端部元件44h不是声学功能换能器元件,并且不通过柱形突起连接到集成电路。那是因为该虚设端部元件服务本发明的保护功能,将到集成电路的连接体38的附接点悬垂,并且利用虚设端部元件44h与集成电路之间的底部填充材料来将连接固化。
图4图示了当组装在换能器探头内部时的图3的换能器堆叠组件。在探头中,声学堆叠30中的匹配层32接合到声学透镜。超声波在成像期间被发送通过透镜48并且到患者的身体中,并且响应于这些波接收的回声通过透镜48由换能器堆叠接收。在备选实施例中,声学透镜48利用窗口来替换,即没有聚焦声学功率的元件。例如,窗口可以由窗口材料PEBAX制成。在该实施例中,第三匹配层也服务于包围换能器堆叠,因为其包绕堆叠并且通过环氧树脂接合部52接合到探头壳体54。接地平面50接合到第二匹配层32d的顶部,并且形成为在第三匹配层46的薄层上的导体层。接地平面电耦合到通过导电匹配层换能器元件,并且连接到柔性电路38的接地导体。在美国专利公开号US2010/0168581(Knowles等人)中找到这些类型的结构的进一步细节,通过引用将其并入本文。
图5图示了本发明的换能器组件的另一范例。在该范例中,声学堆叠30的层中的仅一个或一些需要延伸超过到集成电路的连接体的连接上面的活动声学区。例如,更加昂贵的特定层,例如压电层,可以被限制到活动声学层,从而节省如图4中使用的完全虚设元件的材料。如图5图示,多个层32能够布置为在集成电路上面的不同位置处延伸。例如,底部层32a延伸到在或约集成电路的边缘处的平面。相比之下,其他层32b,32c和32d向内凹进远离集成电路的边缘。在一些实施例中,层32a、32b能够在上面延伸到集成电路的边缘。备选地,集成电路的部分可以不由声学堆叠的层覆盖,使得声学堆叠的边缘朝向集成电路的中心更向内地被定位。在一些实施例中,集成电路的外部边缘近似定位在于多个层中的至少一个的外部边缘相同的平面中。
图2-5中的图示示出了作为连接体的柔性电路。能够代替地使用其他类型的连接体。图6示出了使用线接合部56的一个范例,所述线接合部耦合到支持块42的侧上的柔性电路60。此处,线接合部56耦合到集成电路40的表面的导电焊盘,并且使用底部填充材料36来固定地保持就位。
图6和图7图示了对用于将集成电路40连接到声学堆叠32的消减突起的使用。例如在国际专利公开WO2012/085724中描述了制作具有消减突起58的换能器组件的方法,通过引用将其并入本文。消减过程确定突起58的高度,并且因此确定集成电路与声学堆叠之间的间距。如图6和7所示,声学堆叠32与集成电路之间的间距的高度能够针对特定连接体而被定制。例如,图6中的线接合部56包括需要对能够容纳线接合部56的高度的使用的曲率半径。柔性电路38在到集成电路的接合区附近中不具有弯曲。这样一来,在集成电路与声学堆叠之间需要较少的空间。
图8描述了根据本发明的制作具有受保护的连接体的超声换能器组件的方法。所述方法70包括将(一个或多个)连接体连接到集成电路的初始步骤72。所述连接体能够被定位为接触集成电路的表面上的导电焊盘。为了帮助将连接体保持就位,小量的粘合剂或其他固着材料能够应用于连接体,以将其固定到集成电路,以用于进一步处理。步骤74包括将集成电路耦合到连接体上面的声学堆叠。该步骤能够在将集成电路连接到连接体之后进行。备选地,在声学堆叠耦合到集成电路之后,能够将连接体插入在集成电路与声学堆叠之间。在步骤76中提供底部填充材料,使得底部填充材料覆盖连接体并且固定地将连接体保持就位并且与集成电路接触。针对受保护并且固定保持在声学堆叠与集成电路之间的连接体,切割以形成换能器元件的阵列以及用于产生换能器阵列(步骤78)的额外的制造步骤被执行,从而提供、受保护的连接体的改进的鲁棒性。
Claims (15)
1.一种超声换能器阵列组件,包括:
换能器元件的阵列,所述换能器元件的阵列包括多个层;
集成电路,其结构地耦合到所述换能器元件的阵列;
支持块,其被定位于所述集成电路的与所述换能器元件的阵列相反的侧上;
连接体,其被固定地定位于所述集成电路与所述多个层中的至少一个层之间。
2.根据权利要求1所述的超声换能器阵列组件,其中,所述连接体包括柔性电路。
3.根据权利要求1所述的超声换能器阵列组件,其中,所述连接体包括耦合到柔性电路的线接合部。
4.根据权利要求1所述的超声换能器阵列组件,其中,所述连接体被定位于所述集成电路与所述多个层中的全部之间。
5.根据权利要求1所述的超声换能器阵列组件,其中,所述连接体被定位于所述集成电路与所述多个层中的一个之间。
6.根据权利要求1所述的超声换能器阵列组件,其中,所述集成电路利用柱形突起被结构地耦合到所述换能器元件的阵列。
7.根据权利要求1所述的超声换能器阵列组件,其中,所述集成电路利用消减地创建的突起被结构地耦合到所述换能器元件的阵列。
8.根据权利要求1所述的超声换能器阵列组件,其中,所述支持块包括填充有树脂的多孔泡沫材料。
9.根据权利要求1所述的超声换能器阵列组件,其中,所述集成电路的外部边缘与所述多个层中的至少一个的外部边缘被接近定位于相同的平面中。
10.一种制造超声换能器阵列组件的方法,所述方法包括:
将连接体连接到集成电路;
将所述集成电路耦合到包括多个层的换能器元件的阵列,其中,所述连接体被定位于所述集成电路与所述换能器元件的阵列之间;并且
在所述连接体与所述多个层中的至少一个层之间提供底部填充材料,从而将所述连接体固定地定位于所述集成电路与所述多个层中的至少一个层之间的所述底部填充材料中。
11.根据权利要求10所述的方法,包括提供支持块,所述支持块被定位于所述集成电路的与所述多个层相反的侧上。
12.根据权利要求11所述的方法,还包括对所述多个层进行切割以形成换能器元件的阵列。
13.根据权利要求10所述的方法,其中,所述连接体包括柔性电路。
14.根据权利要求10所述的方法,其中,所述连接体包括耦合到柔性电路的线接合部。
15.根据权利要求9所述的方法,包括将所述集成电路的外部边缘与所述多个层中的至少一个的外部边缘接近定位于相同的平面中。
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