CN105705679B - Susceptor with the arcuate recess in substrate support surface - Google Patents

Susceptor with the arcuate recess in substrate support surface Download PDF

Info

Publication number
CN105705679B
CN105705679B CN201480061427.0A CN201480061427A CN105705679B CN 105705679 B CN105705679 B CN 105705679B CN 201480061427 A CN201480061427 A CN 201480061427A CN 105705679 B CN105705679 B CN 105705679B
Authority
CN
China
Prior art keywords
support component
susceptor
resting surface
susceptor according
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201480061427.0A
Other languages
Chinese (zh)
Other versions
CN105705679A (en
Inventor
弗朗西斯科·科里亚
温森佐·奥格里阿里
弗兰科·佩雷蒂
马里奥·佩雷蒂
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LPE SpA
Original Assignee
LPE SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LPE SpA filed Critical LPE SpA
Publication of CN105705679A publication Critical patent/CN105705679A/en
Application granted granted Critical
Publication of CN105705679B publication Critical patent/CN105705679B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • C30B25/12Substrate holders or susceptors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions

Abstract

The present invention relates to the susceptors for epitaxial growth reactor;It is generally made of main body (601), which has face (602), which includes at least one region (603), which is suitable for receiving the substrate of epitaxial growth to be subjected;The region (603) has the resting surface (604) or associated with the resting surface for shelving the substrate;The resting surface (604) is provided with pattern, which includes at least three plural bodies (605A, 605B, 605C) of arcuate recess (606);In particular, edge of the concave surface of the groove (606) towards resting surface (604).

Description

Susceptor with the arcuate recess in substrate support surface
Invention field
The present invention relates to the susceptors with the pattern obtained on the resting surface for being subjected to the substrate of " epitaxial growth ".
Background technique
Epitaxial growth and decades are known for realizing its reactor, have been based on well known " CVD " Technology, i.e. " chemical vapor deposition " technology.Its applied technical field is the production of electronic component;For this application Technical process and reactor be it is special, requirement that the very high sedimentary of quality and quality requirement is still in increase.
A type of epitaxial reactor uses susceptor, in intercalation reaction chamber and its support it is one or more to It is subjected to the substrate of epitaxial growth, which is placed on resting surface recess portion appropriate (see 10 He of appended drawing reference in Figure 1A 1000) in;It is well known that the substrate can be completely rounded or usually have flat portion (see recess portion completely round in Figure 1B Interior substrate 1000).
High temperature epitaxy growth (is not less than by 800 DEG C, is not higher than 2000 DEG C, and be usually 1000 according to the material of growth DEG C to 1800 DEG C), reactor is frequently used, and at the reactor, chamber is heated, especially by electromagnetic induction or logical The susceptor for crossing resistance acquisition is heated.
The most of prior art (Fig. 1) is related to the epitaxial growth of silicon, the technique with usually 1100 DEG C to 1200 DEG C Temperature, and it is related to related reactor;Really, only the electronic component made of silicon carbide is just broadly made recently With.The positioning of substrate and shelve operation have Railway Project: adherency of the substrate for resting surface;During positioning substrate and/ Or later, transverse shifting of the substrate relative to resting surface;Being placed on the deformation of the substrate on resting surface, (substrate normally tends to Become spill);Heat transmitting from resting surface to substrate, the material transport from resting surface to substrate lack uniformity.
Therefore, carrying out continuous research to find the solution become better and better of these problems.This is also due to The increasingly strict requirement of quality for growth substrates and the quality and speed for production process.
It summarizes
Therefore applicant sets target to provide the solution of the satisfaction of these problems.Such target is by having The susceptor for forming technical characteristic described in the appended claims of the integral part of this explanation is realized.
The basic idea of the invention is that using arcuate recess as the pattern on substrate resting surface.
In particular, the pattern includes at least three plural bodies of arcuate recess;The groove of each plural number body is usually put down each other Row;Each groove of the plural number body preferably starts in first point on the edge of resting surface and ends at resting surface Edge on second point in;Described first point and the second point are away from each other;Resting surface can be surrounded by annular groove.
In particular, edge of the concave surface of groove towards resting surface;More particularly, the concave surface of each groove is towards shelving The edge on surface;Even more particularly, the concave surface of each groove of the plural body of each of at least three plural bodies is towards putting Set the edge on surface.
In particular, the concave surface of each groove in the groove of at least three plural bodies orients in different directions.
In particular, the concave surface of groove is constant (not changing) in its entire longitudinal extension;More particularly, each The concave surface of groove is constant (not changing) in its entire longitudinal extension;Even more particularly, at least three plural body Each of each groove of plural body concave surface its it is entire it is longitudinal extend on be constant (not changing).
According to preferred embodiment, each groove of the plural number body includes the first and second linear end extending parts, it Be equal to each other and be mutually inclined;And third circular central extending part, connect the first and second linear end extending parts.
Attached drawing catalogue
The present invention is considered in conjunction with the accompanying from following detailed description and will be apparent, wherein;
Fig. 1 shows the simplification cross section view and partial top view of the disc body of susceptor according to prior art, Middle substrate is inserted into its recess portion;
Fig. 2 shows the simplification cross section views of the first disc body of susceptor according to the present invention, and wherein substrate is shelved On the surface in its region;
Fig. 3 shows the simplification cross section view of the second disc body of susceptor according to the present invention, and wherein substrate is shelved On the surface in its region;
The simplification that Fig. 4 shows the third disc body of the susceptor according to the present invention combined with the first support component is cutd open Face view, wherein substrate is shelved on the surface of the element;
The simplification that Fig. 5 shows the 4th disc body of the susceptor according to the present invention combined with the first support component is cutd open Face view, wherein substrate is shelved on the surface of the element;
Fig. 6 shows the susceptor according to five different partial views, wherein shelving for substrate according to the present invention Surface has pattern according to the present invention;
Fig. 7 shows the simplification cross section view of the disc body of susceptor according to prior art;
Fig. 8 shows the simplification cross section view of the 5th disc body of susceptor according to the present invention;
Fig. 9 shows the simplification cross section view of the 6th disc body of susceptor according to the present invention;
Figure 10 shows the simplification cross section view of the 7th disc body of susceptor according to the present invention;
Figure 11 shows the simplification of the 8th disc body of the susceptor according to the present invention combined with the second support component Cross section view, wherein substrate is shelved on the surface of the element;
Figure 12 shows the simplification of the 9th disc body of the susceptor according to the present invention combined with third support component Cross section view, wherein substrate is shelved on the surface of the element;
Figure 13 shows the simplification of the tenth disc body of the susceptor according to the present invention combined with the 4th support component Cross section view, wherein substrate is shelved on the surface of the element;
Figure 14 shows the letter of the 11st disc body of the susceptor according to the present invention combined with the 5th support component Change cross section view, wherein substrate is shelved on the surface of the element;
Figure 15 shows the letter of the 12nd disc body of the susceptor according to the present invention combined with the 5th support component Change cross section view, wherein substrate is shelved on the surface of the element;
Figure 16 shows the 13rd dish type master of the susceptor according to the present invention combined with bracket and the 6th support component The simplification cross section view of body, wherein substrate is shelved on the surface of the element;
Figure 17 shows the letters of the 14th disc body of the susceptor according to the present invention combined with the 7th support component Change cross section view, wherein substrate is shelved on the surface of the element.
Such description and attached drawing are only provided by way of example, and are therefore non-limiting.
If it can be readily comprehensible, defined in the appended claims of main advantageous aspect for the present invention The present invention can be applied with actual implementation and in various ways.
It is described in detail
As mentioned, key element of the invention is the pattern obtained on substrate resting surface.
In the example in figure 2, susceptor 20 is similar to the susceptor 10 in Fig. 1, is disc and is provided with circular recess, Substrate 1000 is shelved in the circular recess;Different from the susceptor 10 in Fig. 1, the susceptor 20 in Fig. 2 has with good grounds The resting surface of the recess portion of pattern (being represented by the dotted line) of the invention.
Susceptor 30 in Fig. 3 includes protrusion, has shelving with pattern according to the present invention (being represented by the dotted line) Surface;Substrate 1000 is shelved in protrusion.
Susceptor 40 in Fig. 4 is similar to susceptor 20;However, its recess portion is thicker;In fact, support component 41 is steadily It is plugged into;Substrate 1000 is shelved on the resting surface for being provided with the element 41 of pattern according to the present invention (being represented by the dotted line) On.
Susceptor 50 in Fig. 5 is similar to susceptor 30;But convex portion is without so thick;In fact, support member Part 51 is stably installed thereon;Substrate 1000 is shelved on the element 51 for being provided with pattern according to the present invention (being represented by the dotted line) Resting surface on.
These susceptors are generally made of disc body;Its recess portion or protrusion (its number usually changes from one to ten) can Think circle completely round or with flat portion.
Element 41 and 51 is thin;Preferably circular dish type or round dish type with flat portion.
The very favorable example of this pattern is as shown in Figure 6.
In Fig. 6 (D referring specifically to fig. 6), the disc body of the susceptor is indicated by appended drawing reference 601, and has face 602, which has the region 603 for the substrate (not shown) for being suitable for receiving epitaxial growth to be subjected;Region 603 is Recess portion and has and directly put the resting surface 604 rested on for substrate.
In this example, recess portion and resting surface are completely round (A referring specifically to fig. 6);In addition, resting surface is Shallow concavity (referring to Fig. 6 D).
The pattern on surface 604 includes at least three plural body 605A, 605B, 605C of arcuate recess 606;The plural number used Body number is usually three or four or five;However, it is preferred to number be three (as shown in FIG).
Each of plural body 605A, 605B, 605C extend in different sectors 607A, 607B, the 607C on surface 604; The groove 606 of each plural number body 605A, 605B, 605C does not intersect with each other, and the groove of a plural body (such as 605A) with appoint What his groove of plural body (such as 605B and 605C) is non-intersecting.
In the example of fig. 6, the concave surface face of each of groove 606 of each plural body 605A, 605B, 605C groove To the edge of resting surface 604;In particular, the concave surface of three plural body 605A, 605B, 605C are fixed in three different directions To.
In the example in fig. 6, the concave surface of each groove in the groove 606 of each plural body 605A, 605B, 605C exists It is constant (not changing) in its entire longitudinal extension.Preferably, the groove 606 of each plural body 605A, 605B, 605C are big It is parallel to each other on body.
In general, all sector 607A, 607B, 607C are equal to each other.
Each groove 606 starts from first point on the edge of resting surface 604 (for example, 608 in Fig. 6 B) and ties Beam in the second point on the edge of resting surface 604 (for example, 609 in Fig. 6 B);First point (for example, 608 in Fig. 6 B) It is separate with second point (for example, 609 in Fig. 6 B) and be separated from each other.
According to advantageous embodiment (referring to Fig. 6 A), the shape of groove 606 includes first straight line end stretch portion and Two linear end extending parts are equal to each other and are mutually inclined (in 90 ° or 120 ° or 72 ° for example, as shown in fig. 16 c Angle);And third circular central extending part, connect first straight line end stretch portion, second straight line end stretch portion.According to The present embodiment (referring to Fig. 6 A), the reeded first straight line extending part of institute in the plural body of groove are completely parallel to each other;It is recessed The second straight line extending part of the plural body of slot is completely parallel to each other;The reeded third straight line stretching, extension of institute in the plural body of groove Portion is substantially parallel to each other.The radius of curvature of third extending part is very big, and the reeded numerical value of institute is similar;For example, according to The present embodiment, radius of curvature can be in the range of the 5% to 20% of the outer radius of resting surface.
In the example of fig. 6, groove 606 corresponds to solid line;However, alternatively, but in generally equivalent mode, such as It can correspond to dotted line.
In the example of fig. 6, groove 606 corresponds to the line (even straight line sometimes) of slight curvature;However, alternatively, but In generally equivalent mode, such as it can correspond to wave.
In the example of fig. 6, the institute fluted 606 of plural body 605A, 605B, 605C are arch;However, according to may be selected Degeneration scheme, one in plural body or some or all grooves can be straight;In this case, table is shelved Face will not equably be arranged fluted.
The shape of groove section is advantageously generally triangle (especially having fillet, as illustrated in fig. 6e);For example, three Angular opening angle can be 90 ° to 150 °.
For example, the depth of groove can be 0.1-0.2mm.
For example, the distance between adjacent grooves can be 0.5-1.0mm.
In the example shown in Fig. 6, the recess portion for receiving substrate includes two thin cylindrical volume (especially such as Fig. 6 C With shown in 6D);The radius of upper cylinder facilitates operation (such as the 2- of processing substrate slightly larger than the radius of lower cylinder 4mm);The diameter of substrate is no better than or the diameter of slightly less than lower cylinder.
In the example shown in Fig. 6, resting surface is surrounded by circular groove 610, with plural body 605A, 605B, 605C Institute it is fluted 606 connection (as shown in fig. 16 c);For example, the width of the circular groove can be 1-2mm.
Optionally, it can be interrupted in several points around the groove of resting surface, and therefore can be by multiple (for example, three A or four or five, equal to the number of the plural body of groove) circular groove of different length or advantageously equal length Extending part composition.
The distance between neighbouring parallel groove 606 can be (referring to Fig. 6 B and Fig. 6 E) of variation;It can be similar to The width of groove itself, i.e. 1-2mm (it is worth noting that, its be theoretically it is lumpy, actually this shape is It is theoretic);It may be bigger, i.e. 2-10mm;It may much bigger, i.e. 10-20mm;In latter situation, there are flat regions Domain 611 may be advantageously striated or coarse or annular knurl part.
This pattern has discharge around the advantage of the gas of substrate, especially gas of the discharge in annular groove;This The exhaust of sample is with gradual change in the concave surface that substrate is raised and is arranged in concave bottom.Arcuate in shape (therefore do not have Any kind of turning) it is particularly advantageous, because it does not cause the stress on the silicon carbide layer being applied in the C-shaped portion of lower section Or peak value (certainly, the cross section of the groove also necessary gradual change, i.e., without turning of heat;For example, neither rectangular nor square Shape);In addition, it allows the risk minimization being smoothly vented very much and move substrate level in all directions;Most Afterwards, it circumferentially collects (thus having big surface) and radial discharge.
In the example of fig. 6, which is related to entire resting surface;But optionally, which only can partially be related to putting Surface is set, such as only relates to external annular region.
Fig. 7 shows the main body 701 of dish type susceptor according to prior art, and center dant 703 has slight recessed light Sliding and flat resting surface 704.
In the example of fig. 8, the main body 801 of dish type susceptor includes circular recess 803, which has slight recessed Resting surface 804;Surface 804 is patterned and the figure is schematically shown in multiple grooves with constant depth One groove 806 (for example, as groove 606), which, which leads to, firmly gets more annular grooves 810 than groove 806.
In the example of figure 9, the main body 901 of dish type susceptor includes circular recess 903, which has slight recessed Resting surface 904;Surface 904 be patterned and the figure with variable depth (in particular, minimum at center and at edge It is maximum) groove 906 (for example, as groove 606) in multiple grooves is schematically shown, which leads to annular Groove 910;The bottom of groove 906 and 910 is in same level and patterning that this can be conducive to the position.
In the example of Figure 10, the main body 1001 of dish type susceptor includes circular recess 1003, which has light The resting surface 1004 of dimple;Surface 1004 be patterned and the figure with variable depth (in particular, in central minima And in edge maximum) groove 1006 (for example, as groove 606) in multiple grooves is schematically shown, this is recessed Slot leads to annular groove 1010;The bottom of groove 1006 and 1010 is in same level and pattern that this can be conducive to the position Change;It is worth noting that, in 1003 center of recess portion, the depth of groove 1006 be 0 (or close to 0).
The alternative of scheme in Fig. 8, Fig. 9, Figure 10 may include multiple recess portions such as the recess portion in these figures.
Example of the Figure 11 into Figure 15 includes susceptor, which has the disc body including recess portion;Support component, It is inserted into the recess portion;The support component has the resting surface for being provided with pattern according to the present invention (being represented by the dotted line);It changes Sentence is talked about, and the recess portion is only associated with the resting surface of substrate, rather than directly possesses the resting surface.
In the example of Figure 11, main body is indicated by appended drawing reference 1101, and support component 1120 is with thin lug The disk of edge;Therefore the support component has the recess portion for substrate 1000, and the edge surrounds substrate 1000 and resting surface. The recess portion of main body 1101 has the oblique angle on edge in order to the mechanical grip of element 1120.
In the example in figure 12, main body is indicated by appended drawing reference 1201, and support component 1220 is with thick lug The disk of edge;Therefore the support component has the recess portion for substrate 1000, and the edge surrounds substrate 1000 and resting surface.
In the example of Figure 13, main body is indicated by appended drawing reference 1301, and support component 1320 is with thin protruding ring Disk, which is recessed relative to the edge of disk;Therefore the support component has the recess portion for substrate 1000 And the ring surrounds substrate 1000 and resting surface.
In the example of Figure 14, main body is indicated by appended drawing reference 1401, and support component 1420 is to have to form L shape section The disk at the edge of the forming in face;Therefore the support component has the recess portion for substrate 1000 and the edge surrounds substrate 1000 And resting surface.
In the example of Figure 15, main body is indicated by appended drawing reference 1501, and support component 1520 is equal to the branch in Figure 14 Support element.The scheme of Figure 15 and the scheme of Figure 14 except that the recess portion of main body 1401 with element 1420 be it is complementary, so And there are gaps between the surface of the recess portion and the surface of element 1520 for the recess portion of main body 1501;For example, this space can be with It is used to facilitate the operation of processing support component.
Resting surface is patterned it is worth noting that, being equal to or being similar to having for those shown in Figure 11 to Figure 15 Support component can not only combine with the susceptor body of one or more recess portion, but also can with have one or The susceptor body of multiple protrusions combines.Furthermore it is noted that being equal to or being similar to shown in Figure 11 to Figure 15 that The outer shape of a little support components can be completely round or with flat portion circle.Finally, it is notable that be equal to Either being similar to the shape of the recess portion of the support component of those shown in Figure 11 to Figure 15 can be completely round or have The circle in flat portion.
Application of the Figure 16 referring to the present invention at certain, wherein susceptor includes disc body and at least one support member Part and corresponding bracket;Scheme in Figure 16 only includes a support component and a bracket;However, alternative solution may include Multiple (for example, three or four or five or six) support components and corresponding multiple (for example, three or four Either five or six) bracket.
Figure 16 shows support component 1630 and surrounds the connection of the bracket 1640 of the support component;In Figure 16, in this way Connection show when susceptor main body 1601 be inserted into recess portion 1603 in when, which will then be stably placed at At the bottom of recess portion 1603;At the end of the operation, support component 1630 will be also stably placed at the bottom of recess portion 1603; Optionally, support component 1630 can with the bottom of recess portion 1603 it is little more be spaced (for example, interval 0.5mm).
Support component 1630 has the patterned resting surface (being represented by the dotted line) according to the present invention on above it, For shelving substrate (substrate 1000 in figure, close to element 1630).
The substantially thick disk of element 1630, but its have in its lower section for being connected to the narrow of bracket 1640 Slot.
Figure 17 referring to application of the present invention at certain, wherein susceptor include disc body 1701 and it is multiple (for example, Three or four or five or six) support component 1720.
Main body 1701 includes multiple through holes, and element 1720 is inserted into the through hole.
Support component 1720 has the patterned resting surface (being represented by the dotted line) according to the present invention on above it, For shelving substrate (substrate 1000 in figure, close to element 1720).
The substantially thick disk of element 1720, but it has the hole for being used to be connected to main body 1701 in its lower section Slit.
In Figure 17, central recess is shown on the back of susceptor body, which is used for guide main body itself Rotation.

Claims (45)

1. a kind of susceptor for epitaxial growth reactor is made of main body (601), the main body has face (602), institute The face of stating includes at least one region (603) suitable for receiving the substrate of epitaxial growth to be subjected;Wherein, the region (603) With resting surface (604) for shelving the substrate or associated with resting surface (604) for shelving the substrate, And wherein the resting surface (604) is provided with pattern,
It is characterized in that, the pattern includes at least three plural bodies (605A, 605B, 605C) of arcuate recess (606), it is described The concave surface of each of groove in the plural body of each of at least three plural bodies groove is towards the side of the resting surface Edge.
2. susceptor according to claim 1, wherein each of groove (606) plural number body (605A, 605B, 605C) exists Extend in the different independent sectors (607A, 607B, 607C) of the resting surface (604).
3. susceptor according to claim 2, wherein the sector of the resting surface (604) (607A, 607B, 607C) it is mutually equal.
4. susceptor according to claim 2, wherein in each plural body (605A, 605B, 605C), the groove (606) it is separated from each other.
5. susceptor according to claim 3, wherein in each plural body (605A, 605B, 605C), the groove (606) it is separated from each other.
6. susceptor according to claim 4, wherein the groove of each plural number body (605A, 605B, 605C) (606) parallel to each other.
7. susceptor according to claim 5, wherein the groove of each plural number body (605A, 605B, 605C) (606) parallel to each other.
8. susceptor according to claim 1, wherein the groove in the plural body of each of described at least three plural bodies Each of the concave surface of groove oriented in different direction.
9. susceptor according to claim 1, wherein the groove in the plural body of each of described at least three plural bodies Each of groove concave surface its it is entire longitudinal extend on be constant.
10. susceptor according to claim 1 to 9, wherein the plural number body (605A, 605B, 605C) Each groove (606) starts from first point (608) on the edge of the resting surface (604) and ends at described to shelve table In second point (609) on the edge in face (604), first point (608) and the second point (609) are away from each other.
11. susceptor according to claim 1 to 9, wherein the resting surface (604) is by annular groove (610) it surrounds.
12. susceptor according to claim 10, wherein the resting surface (604) is surrounded by annular groove (610).
13. susceptor described in any one of -9 and 12 according to claim 1, wherein it is described plural number body (605A, 605B, Each groove (606) 605C) includes the first straight line end stretch portion and second straight line end for being equal to each other and being mutually inclined Portion's extending part, and the third central circular in connection first straight line end stretch portion and second straight line end stretch portion Extending part.
14. susceptor according to claim 10, wherein each groove of the plural number body (605A, 605B, 605C) It (606) include the first straight line end stretch portion and second straight line end stretch portion for being equal to each other and being mutually inclined, Yi Jilian Connect the third central circular extending part in first straight line end stretch portion and second straight line end stretch portion.
15. susceptor according to claim 11, wherein each groove of the plural number body (605A, 605B, 605C) It (606) include the first straight line end stretch portion and second straight line end stretch portion for being equal to each other and being mutually inclined, Yi Jilian Connect the third central circular extending part in first straight line end stretch portion and second straight line end stretch portion.
16. susceptor described in any one of -9,12,14 and 15 according to claim 1, wherein between two grooves (606) Surface is striated, coarse or annular knurl.
17. susceptor according to claim 10, wherein the surface between two grooves (606) is striated, coarse Or annular knurl.
18. susceptor according to claim 11, wherein the surface between two grooves (606) is striated, coarse Or annular knurl.
19. susceptor according to claim 13, wherein the surface between two grooves (606) is striated, coarse Or annular knurl.
20. according to claim 1-9,12, susceptor described in any one of 14-15 and 17-19, wherein the resting surface It (604) is recessed.
21. susceptor according to claim 10, wherein the resting surface (604) is recessed.
22. susceptor according to claim 11, wherein the resting surface (604) is recessed.
23. susceptor according to claim 13, wherein the resting surface (604) is recessed.
24. susceptor according to claim 16, wherein the resting surface (604) is recessed.
25. according to claim 1-9,12, susceptor described in any one of 14-15,17-19 and 21-24, wherein the area Domain is the recess portion or protrusion of the main body (601).
26. susceptor according to claim 10, wherein the region is the recess portion or protrusion of the main body (601).
27. susceptor according to claim 11, wherein the region is the recess portion or protrusion of the main body (601).
28. susceptor according to claim 13, wherein the region is the recess portion or protrusion of the main body (601).
29. susceptor according to claim 16, wherein the region is the recess portion or protrusion of the main body (601).
30. susceptor according to claim 20, wherein the region is the recess portion or protrusion of the main body (601).
31. according to claim 1-9,12, susceptor described in any one of 14-15,17-19,21-24 and 26-30, including with In at least one support component of the substrate, wherein the support component has the resting surface, and wherein it is described at least One support component is arranged at least one described region.
32. susceptor according to claim 10, including at least one support component for the substrate, wherein institute Support component is stated with the resting surface, and wherein at least one described support component is arranged at least one described region On.
33. susceptor according to claim 11, including at least one support component for the substrate, wherein institute Support component is stated with the resting surface, and wherein at least one described support component is arranged at least one described region On.
34. susceptor according to claim 13, including at least one support component for the substrate, wherein institute Support component is stated with the resting surface, and wherein at least one described support component is arranged at least one described region On.
35. susceptor according to claim 16, including at least one support component for the substrate, wherein institute Support component is stated with the resting surface, and wherein at least one described support component is arranged at least one described region On.
36. susceptor according to claim 20, including at least one support component for the substrate, wherein institute Support component is stated with the resting surface, and wherein at least one described support component is arranged at least one described region On.
37. susceptor according to claim 25, including at least one support component for the substrate, wherein institute Support component is stated with the resting surface, and wherein at least one described support component is arranged at least one described region On.
38. according to claim 1-9,12, susceptor described in any one of 14-15,17-19,21-24 and 26-30, including with At least one support component in the substrate and at least one bracket for the support component, wherein it is described at least one Bracket includes hole, wherein the support component has the resting surface, and wherein at least one described bracket is arranged described On at least one region, and at least one described support component is inserted into the hole.
39. susceptor according to claim 10 including at least one support component for the substrate and is used for institute At least one bracket of support component is stated, wherein at least one described bracket includes hole, wherein the support component is with described Resting surface, and wherein at least one described bracket is arranged at least one described region, and at least one described support member Part is inserted into the hole.
40. susceptor according to claim 11 including at least one support component for the substrate and is used for institute At least one bracket of support component is stated, wherein at least one described bracket includes hole, wherein the support component is with described Resting surface, and wherein at least one described bracket is arranged at least one described region, and at least one described support member Part is inserted into the hole.
41. susceptor according to claim 13 including at least one support component for the substrate and is used for institute At least one bracket of support component is stated, wherein at least one described bracket includes hole, wherein the support component is with described Resting surface, and wherein at least one described bracket is arranged at least one described region, and at least one described support member Part is inserted into the hole.
42. susceptor according to claim 16 including at least one support component for the substrate and is used for institute At least one bracket of support component is stated, wherein at least one described bracket includes hole, wherein the support component is with described Resting surface, and wherein at least one described bracket is arranged at least one described region, and at least one described support member Part is inserted into the hole.
43. susceptor according to claim 20 including at least one support component for the substrate and is used for institute At least one bracket of support component is stated, wherein at least one described bracket includes hole, wherein the support component is with described Resting surface, and wherein at least one described bracket is arranged at least one described region, and at least one described support member Part is inserted into the hole.
44. susceptor according to claim 25 including at least one support component for the substrate and is used for institute At least one bracket of support component is stated, wherein at least one described bracket includes hole, wherein the support component is with described Resting surface, and wherein at least one described bracket is arranged at least one described region, and at least one described support member Part is inserted into the hole.
45. a kind of epitaxial growth reactor, including at least one susceptor according to any one of the preceding claims, institute It states susceptor and is used to support and heats substrate.
CN201480061427.0A 2013-11-11 2014-11-06 Susceptor with the arcuate recess in substrate support surface Active CN105705679B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
ITCO2013A000058 2013-11-11
IT000058A ITCO20130058A1 (en) 2013-11-11 2013-11-11 SUSCECTOR WITH SHAPED PROCESSES IN THE SUBSTRATE SUPPORTING AREA
PCT/IB2014/002357 WO2015068022A1 (en) 2013-11-11 2014-11-06 Susceptor with arched shape grooves on the substrates support surface

Publications (2)

Publication Number Publication Date
CN105705679A CN105705679A (en) 2016-06-22
CN105705679B true CN105705679B (en) 2019-06-07

Family

ID=50031426

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480061427.0A Active CN105705679B (en) 2013-11-11 2014-11-06 Susceptor with the arcuate recess in substrate support surface

Country Status (3)

Country Link
CN (1) CN105705679B (en)
IT (1) ITCO20130058A1 (en)
WO (1) WO2015068022A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ITUB20154925A1 (en) * 2015-11-03 2017-05-03 L P E S P A SUSCECTOR WITH ASYMMETRICAL RECESSES, REACTOR FOR EPITAXIAL DEPOSITION AND PRODUCTION METHOD

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5476548A (en) * 1994-06-20 1995-12-19 Applied Materials, Inc. Reducing backside deposition in a substrate processing apparatus through the use of a shadow ring
US5534073A (en) * 1992-09-07 1996-07-09 Mitsubishi Denki Kabushiki Kaisha Semiconductor producing apparatus comprising wafer vacuum chucking device
US6264467B1 (en) * 1999-04-14 2001-07-24 Applied Materials, Inc. Micro grooved support surface for reducing substrate wear and slip formation

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007131547A1 (en) * 2006-05-15 2007-11-22 Aixtron Ag Semiconductor control device for a cvd or rtp process
JP5024382B2 (en) * 2007-08-03 2012-09-12 信越半導体株式会社 Susceptor and silicon epitaxial wafer manufacturing method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5534073A (en) * 1992-09-07 1996-07-09 Mitsubishi Denki Kabushiki Kaisha Semiconductor producing apparatus comprising wafer vacuum chucking device
US5476548A (en) * 1994-06-20 1995-12-19 Applied Materials, Inc. Reducing backside deposition in a substrate processing apparatus through the use of a shadow ring
US6264467B1 (en) * 1999-04-14 2001-07-24 Applied Materials, Inc. Micro grooved support surface for reducing substrate wear and slip formation

Also Published As

Publication number Publication date
CN105705679A (en) 2016-06-22
WO2015068022A1 (en) 2015-05-14
ITCO20130058A1 (en) 2015-05-12

Similar Documents

Publication Publication Date Title
US11848226B2 (en) Thermal processing susceptor
KR101928356B1 (en) Apparatus for manufacturing semiconductor
TWI649781B (en) Self-centering wafer carrier system for chemical vapor deposition
US9202727B2 (en) Susceptor heater shim
JP6494605B2 (en) Susceptor with support element
US9487862B2 (en) Semiconductor growing apparatus
US4986215A (en) Susceptor for vapor-phase growth system
US11961756B2 (en) Vented susceptor
TWI590363B (en) Wafer tray
US20120263875A1 (en) Method and Apparatus For Depositing A Material Layer Originating From Process Gas On A Substrate Wafer
US8404049B2 (en) Epitaxial barrel susceptor having improved thickness uniformity
US9543186B2 (en) Substrate support with controlled sealing gap
CN105705679B (en) Susceptor with the arcuate recess in substrate support surface
CN103361635A (en) Chemical vapor deposition apparatus having susceptor and semiconductor manufacture device
KR20200133657A (en) Electrostatic chuck heater
WO2015044748A1 (en) Coated susceptor and anti-bowing method
CN105609460A (en) Unit for supporting substrate
CN105814243B (en) Susceptor with the curved concentric grooves on bed support
EP3863043A1 (en) Susceptor
US20150259827A1 (en) Susceptor
KR102382335B1 (en) Apparatus for manufacturing semiconductor
JP7077331B2 (en) Substrate carrier structure
KR20170056375A (en) Evaporation Source for Preventing Clogging
KR20130035616A (en) Susceptor and chemical vapor deposition apparatus including the same
KR20180059436A (en) Heat treatment vessel and etching method of single crystal silicon carbide substrate

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant