CN105705679A - Susceptor with arched shape grooves on the substrates support surface - Google Patents
Susceptor with arched shape grooves on the substrates support surface Download PDFInfo
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- CN105705679A CN105705679A CN201480061427.0A CN201480061427A CN105705679A CN 105705679 A CN105705679 A CN 105705679A CN 201480061427 A CN201480061427 A CN 201480061427A CN 105705679 A CN105705679 A CN 105705679A
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- resting surface
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention relates to a susceptor for an epitaxial growth reactor; it substantially consists of a body (601) having a face (602) which comprises at least one zone (603) adapted to receive a substrate to be subjected to epitaxial growth; the zone (603) either has or is associated with a resting surface (604) for resting said substrate; the resting surface (604) is provided with patterns which comprise at least three pluralities (605A, 605B, 605C) of arch-shaped grooves (606); in particular, the concavity of said grooves (606) faces towards the edge of the resting surface (604).
Description
Invention field
The present invention relates to the susceptor with the pattern obtained on the resting surface of substrate standing " epitaxial growth "。
Background technology
Epitaxial growth and the reactor for realizing it have been known decades, and it is based on known " CVD " technology, i.e. " chemical vapour deposition (CVD) " technology。Its technical field applied is the production of electronic devices and components;Technical process and reactor for this application are special, requirement that the very high deposition layer of quality and prescription are still in increasing。
A type of epitaxial reactor have employed susceptor, in its insertion reaction chamber and its support one or more epitaxially grown substrates to be subjected, in the recess (the accompanying drawing labelling 10 and 1000 see in Figure 1A) that it is suitable that this substrate is placed on resting surface;It is known that this substrate can be completely rounded or be generally of flat portion (substrate 1000 see in recess completely round in Figure 1B)。
(being not less than 800 DEG C, not higher than 2000 DEG C, and the material according to growth is generally 1000 DEG C to 1800 DEG C) is grown for high temperature epitaxy, reactor is frequently used, at this reactor place, chamber is heated, heated especially by electromagnetic induction or the susceptor that obtained by resistance。
Most prior art (Fig. 1) relates to the epitaxial growth of silicon, has the technological temperature being generally 1100 DEG C to 1200 DEG C, and relates to relevant reactor;Really, the electronic devices and components being only made up of carborundum recently are just more widely used。The location of substrate and shelve operation there is Railway Project: substrate is for the adhesion of resting surface;Location substrate during and/or afterwards, substrate is relative to the transverse shifting of resting surface;The deformation (substrate normally tends to become spill) of the substrate being placed on resting surface;Heat transmission from resting surface to substrate, the material transport from resting surface to substrate lack uniformity。
Therefore, the constantly research solution become better and better to find these problems is being carried out。This is also due to the quality for growth substrates and the requirement for the quality of production process and the increasingly stringent of speed。
General introduction
Applicant therefore by goal setting for providing the solution of the satisfaction of these problems。Such target realizes by having the susceptor of the technical characteristic set forth in the claims of the integral part that tangible costs illustrates。
The basic thought of the present invention is to use arcuate recess as the pattern on substrate resting surface。
Particularly, this pattern includes at least three plural number body of arcuate recess;The groove of each plural number body is generally parallel to each other;Described plural number body each groove preferably start with in first on the edge of resting surface and end on the edge of resting surface second point in;Described first and described second point are away from each other;Resting surface can be surrounded by annular groove。
Particularly, the concave surface of groove is towards the edge of resting surface;More particularly, the concave surface of each groove is towards the edge of resting surface;Even more particularly, the concave surface of each groove of each plural number body at least three plural number body is towards the edge of resting surface。
Particularly, the concave surface of each groove in the groove of at least three plural number body is directed in different directions。
Particularly, the concave surface of groove is constant (namely not changing) on its whole longitudinal extension;More particularly, the concave surface of each groove is constant (namely not changing) on its whole longitudinal extension;Even more particularly, the concave surface of each groove of each plural number body at least three plural number body is constant (namely not changing) on its whole longitudinal extension。
According to preferred embodiment, each groove of described plural number body includes the first and second linear end extending parts, and they are equal to each other and are mutually inclined;And the 3rd circular central extending part, it connects the first and second linear end extending parts。
Accompanying drawing catalogue
The present invention is considered in conjunction with the accompanying will be apparent from from detailed description below, wherein;
Fig. 1 illustrates simplification cross section view and the partial top view of the disc body of the susceptor according to prior art, and wherein substrate inserts in its recess;
Fig. 2 illustrates the simplification cross section view of the first disc body of the susceptor according to the present invention, and wherein substrate is shelved on the surface in its region;
Fig. 3 illustrates the simplification cross section view of the second disc body of the susceptor according to the present invention, and wherein substrate is shelved on the surface in its region;
Fig. 4 illustrates the simplification cross section view of the 3rd disc body of the susceptor according to the present invention with the first support component combination, and wherein substrate is shelved on the surface of this element;
Fig. 5 illustrates the simplification cross section view of the 4th disc body of the susceptor according to the present invention with the first support component combination, and wherein substrate is shelved on the surface of this element;
Fig. 6 illustrates the susceptor according to five different partial views, and wherein the resting surface for substrate according to the present invention has the pattern according to the present invention;
Fig. 7 illustrates the simplification cross section view of the disc body of the susceptor according to prior art;
Fig. 8 illustrates the simplification cross section view of the 5th disc body of the susceptor according to the present invention;
Fig. 9 illustrates the simplification cross section view of the 6th disc body of the susceptor according to the present invention;
Figure 10 illustrates the simplification cross section view of the 7th disc body of the susceptor according to the present invention;
Figure 11 illustrates the simplification cross section view of the 8th disc body of the susceptor according to the present invention with the second support component combination, and wherein substrate is shelved on the surface of this element;
Figure 12 illustrates the simplification cross section view of the 9th disc body of the susceptor according to the present invention with the 3rd support component combination, and wherein substrate is shelved on the surface of this element;
Figure 13 illustrates the simplification cross section view of the tenth disc body of the susceptor according to the present invention with the 4th support component combination, and wherein substrate is shelved on the surface of this element;
Figure 14 illustrates the simplification cross section view of the 11st disc body of the susceptor according to the present invention with the 5th support component combination, and wherein substrate is shelved on the surface of this element;
Figure 15 illustrates the simplification cross section view of the 12nd disc body of the susceptor according to the present invention with the 5th support component combination, and wherein substrate is shelved on the surface of this element;
Figure 16 illustrates the simplification cross section view of the 13rd disc body of the susceptor according to the present invention combined with support and the 6th support component, and wherein substrate is shelved on the surface of this element;
Figure 17 illustrates the simplification cross section view of the 14th disc body of the susceptor according to the present invention with the 7th support component combination, and wherein substrate is shelved on the surface of this element。
Such description and accompanying drawing are only provided by the mode of example, and are therefore nonrestrictive。
As it can be easy to understand, for the present invention main favourable in claims in the present invention that defines actual can implement and apply in every way。
Describe in detail
As mentioned, the key element of the present invention is the pattern obtained on substrate resting surface。
In the example in figure 2, susceptor 20 is similar to the susceptor 10 in Fig. 1, is disc and is provided with circular depressions, and substrate 1000 is shelved in this circular depressions;The susceptor 20 being different from the susceptor 10, Fig. 2 in Fig. 1 has the resting surface of the recess of the pattern (being illustrated by the broken lines) with the with good grounds present invention。
Susceptor 30 in Fig. 3 includes projection, and it has the resting surface of the pattern (being illustrated by the broken lines) with the with good grounds present invention;Substrate 1000 is shelved in projection。
Susceptor 40 in Fig. 4 is similar to susceptor 20;But, its recess is thicker;It practice, support component 41 in order to be stably inserted wherein;Substrate 1000 is shelved on the resting surface of the element 41 being provided with the pattern (being illustrated by the broken lines) according to the present invention。
Susceptor 50 in Fig. 5 is similar to susceptor 30;But, its bossing is so not thick;It practice, support component 51 is stably installed on it;Substrate 1000 is shelved on the resting surface of the element 51 being provided with the pattern (being illustrated by the broken lines) according to the present invention。
These susceptors are generally made up of disc body;Its recess or projection (its number generally changes to ten) can be completely round or with flat portion circle。
Element 41 and 51 is thin;Preferably circular dish type or the circular dish type with flat portion。
The very favorable example of this pattern is as shown in Figure 6。
In figure 6 (referring specifically to Fig. 6 D), the disc body of this susceptor is represented by accompanying drawing labelling 601, and has face 602, and this face 602 has the region 603 being applicable to receive epitaxially grown substrate (not shown) to be subjected;Region 603 is recess and has and directly put the resting surface 604 rested on for substrate。
In this example, recess and resting surface are completely round (referring specifically to Fig. 6 A);Additionally, resting surface is shallow concavity (with reference to Fig. 6 D)。
The pattern on surface 604 includes at least three plural number body 605A, 605B, 605C of arcuate recess 606;The plural body number used is generally three or four or five;However, it is preferred to number be three (as shown in FIG)。
Each in plural number body 605A, 605B, 605C extends in different sector 607A, 607B, the 607C on surface 604;The groove 606 of each plural number body 605A, 605B, 605C does not intersect each other, and the groove of a plural body (such as 605A) is non-intersect with the groove of any other plural number body (such as 605B and 605C)。
In the example of fig. 6, the concave surface of each groove in the groove 606 of each plural number body 605A, 605B, 605C is towards the edge of resting surface 604;Particularly, the concave surface of three plural body 605A, 605B, 605C is directed in three different directions。
In the example in fig. 6, the concave surface of each groove in the groove 606 of each plural number body 605A, 605B, 605C is constant (namely not changing) on its whole longitudinal extension。Preferably, the groove 606 of each plural number body 605A, 605B, 605C is substantially parallel to each other。
Generally, all of sector 607A, 607B, 607C is equal to each other。
Each groove 606 starts from first on the edge of resting surface 604 (such as, 608 in Fig. 6 B) and ends at (such as, 609 in Fig. 6 B) in the second point on the edge of resting surface 604;First point (such as, 608 in Fig. 6 B) and second point (such as, 609 in Fig. 6 B) away from and be spaced apart。
According to favourable embodiment (referring to Fig. 6 A), the shape of groove 606 includes the first linear end extending part and the second linear end extending part, it is equal to each other and is mutually inclined the angle of 120 ° or 72 ° (such as, as shown in fig. 16 c, in 90 ° or);And the 3rd circular central extending part, it connects the first linear end extending part, the second linear end extending part。According to the present embodiment (referring to Fig. 6 A), the reeded first straight line extending part of institute in the plural body of groove is completely parallel to each other;Second straight line extending part of the plural body of groove is completely parallel to each other;Reeded 3rd straight line extending part in the plural body of groove is substantially parallel to each other。The radius of curvature of the 3rd extending part is very big, and institute's this numerical value reeded is similar;Such as, according to the present embodiment, radius of curvature can in the scope of the 5% to 20% of the outer radius of resting surface。
In the example of fig. 6, groove 606 is corresponding to solid line;However, alternatively, but by generally equivalence in the way of, for instance it can correspond to dotted line。
In the example of fig. 6, groove 606 is corresponding to the line (sometimes even for straight line) of slight curvature;However, alternatively, but by generally equivalence in the way of, for instance it can correspond to wave。
In the example of fig. 6, the institute fluted 606 of plural number body 605A, 605B, 605C is arch;But, the scheme according to selectable degeneration, plural number body in one or some or all groove can be straight;In this case, resting surface will not be provided with groove equably。
The shape of groove section is advantageously generally triangle and (particularly has fillet, as illustrated in fig. 6e);Such as, the opening angle of triangle can be 90 ° to 150 °。
Such as, the degree of depth of groove can be 0.1-0.2mm。
Such as, the distance between adjacent grooves can be 0.5-1.0mm。
In the example shown in Fig. 6, for receiving the recess of substrate to include two thin cylindrical volumes (particularly as shown in figures 6 c and 6d);The radius of upper cylinder is a bit larger tham the radius of lower cylinder to facilitate the operation (such as 2-4mm) processing substrate;The diameter of substrate no better than or be slightly less than the diameter of lower cylinder。
In the example shown in Fig. 6, resting surface is surrounded by circular groove 610, and it connects (as shown in fig. 16 c) with the institute fluted 606 of plural number body 605A, 605B, 605C;Such as, the width of this circular groove can be 1-2mm。
Alternatively, groove around resting surface can interrupt several, and therefore can by the circular groove extending part composition of multiple (such as, three or four or five, equal to the number of plural body of groove) different length or advantageously equal length。
The contiguous distance between parallel groove 606 can be change (referring to Fig. 6 B and Fig. 6 E);It can similar in appearance to the width of groove self, i.e. 1-2mm (it should be noted that it is lumpy in theory, actually this shape is theoretic);It is likely to bigger, i.e. 2-10mm;It is likely to much bigger, i.e. 10-20mm;At latter event, there is flat site 611, it is likely to be advantageously striated or coarse or annular knurl part。
This pattern has the advantage discharging the gas around substrate, particularly discharges the gas in annular groove;It is protruding and be arranged in the concave surface in concave bottom gradual change that such aerofluxus is as substrate。It is particularly advantageous that arcuate in shape (so there is no any kind of turning) because its do not cause the stress on the silicon carbide layer in the C shape portion being applied to lower section or heat peak value (certainly, the cross section of groove also must gradual change, namely without turning;Such as, neither square neither rectangle);Additionally, it allows very smoothly aerofluxus in all directions and the risk minimization moved by substrate level;Finally, its circumference collects (thus having big surface) and radial discharge。
In the example of fig. 6, this pattern relates to whole resting surface;But alternatively, this pattern only can partly relate to resting surface, for instance only relates to external annular region。
Fig. 7 illustrates the main body 701 of the dish type susceptor according to prior art, and its center dant 703 has slightly recessed smooth and smooth resting surface 704。
In the example of fig. 8, the main body 801 of dish type susceptor includes circular depressions 803, and this circular depressions has slightly recessed resting surface 804;Surface 804 is patterning and this figure groove 806 (such as, as groove 606) of schematically showing in multiple groove with the constant degree of depth, and this groove leads to firmly gets many annular grooves 810 than groove 806。
In the example of figure 9, the main body 901 of dish type susceptor includes circular depressions 903, and this circular depressions has slightly recessed resting surface 904;Surface 904 be patterning and this figure with the variable degree of depth (particularly, minimum at center and maximum at edge) schematically show a groove 906 in multiple groove (such as, as groove 606), this groove leads to annular groove 810;The bottom of groove 906 and 910 in same level and this can be conducive to the patterning at this position。
In the example of Figure 10, the main body 1001 of dish type susceptor includes circular depressions 1003, and this circular depressions has slightly recessed resting surface 1004;Surface 1004 be patterning and this figure with the variable degree of depth (particularly, at central minima and maximum at edge) schematically show a groove 1006 in multiple groove (such as, as groove 606), this groove leads to annular groove 1010;The bottom of groove 1006 and 1010 in same level and this can be conducive to the patterning at this position;It should be noted that in the minds of in recess 1003, the degree of depth of groove 1006 be 0 (or close to 0)。
The alternative of the scheme in Fig. 8, Fig. 9, Figure 10 can include multiple recesses of the recess in these figure。
Example in Figure 11 to Figure 15 includes susceptor, and this susceptor has the disc body including recess;Support component, it inserts in this recess;This support component has the resting surface being provided with the pattern (being illustrated by the broken lines) according to the present invention;In other words, this recess is only associated with the resting surface of substrate, rather than directly has this resting surface。
In the example of Figure 11, main body is represented by accompanying drawing labelling 1101, and support component 1120 is the disk with thin raised brim;Therefore this support component has a recess for substrate 1000, and this edge is around substrate 1000 and resting surface。The recess of main body 1101 has the oblique angle on edge so that the mechanical grip of element 1120。
In the example in figure 12, main body is represented by accompanying drawing labelling 1201, and support component 1220 is the disk with thick raised brim;Therefore this support component has a recess for substrate 1000, and this edge is around substrate 1000 and resting surface。
In the example of Figure 13, main body is represented by accompanying drawing labelling 1301, and support component 1320 is the disk with thin protruding ring, and this protruding ring is recessed relative to the edge of disk;Therefore this support component has the recess for substrate 1000 and this ring around substrate 1000 and resting surface。
In the example of Figure 14, main body is represented by accompanying drawing labelling 1401, and support component 1420 is the disk at the edge with the shaping forming " L " tee section;Therefore this support component has the recess for substrate 1000 and this edge around substrate 1000 and resting surface。
In the example of Figure 15, main body is represented by accompanying drawing labelling 1501, and support component 1520 is equal to the support component in Figure 14。The scheme of Figure 15 and the scheme of Figure 14 are a difference in that, the recess of main body 1401 and element 1420 are complementary, but, recess 1501 leaves gap between the surface of the surface of this recess and element 1520;Such as, this space can be used to the convenient operation processing support component。
It should be noted that, equal to or can not only combine with the susceptor body with one or more recess similar in appearance to the support component with patterning resting surface of those shown in Figure 11 to Figure 15, and can combine with the susceptor body with one or more projection。Furthermore it is noted that equal to or can be completely round or with flat portion circle similar in appearance to the external shape of the support component of those shown in Figure 11 to Figure 15。Finally, it is notable that equal to or can be completely round or with flat portion circle similar in appearance to the shape of the recess of the support component of those shown in Figure 11 to Figure 15。
Figure 16 is with reference to present invention application in certain situation, and wherein susceptor includes disc body and at least one support component and corresponding support;Scheme in Figure 16 only includes a support component and a support;But, replacement scheme can include multiple (such as, three or four or five or six) support component and multiple (such as, three or four or five or six) supports accordingly。
Figure 16 illustrates the connection of the support 1640 of support component 1630 and this support component of encirclement;In Figure 16 A, such connection illustrates when the main body 1601 of susceptor is inserted in recess 1603, and this susceptor body then will be stably placed at the bottom place of recess 1603;When operation terminates, support component 1630 also will be located by the bottom being stably placed at recess 1603;Alternatively, support component 1630 can and the interval, little more ground, bottom (such as, interval 0.5mm) of recess 1603。
Support component 1630 has the resting surface (being illustrated by the broken lines) of the patterning according to the present invention gone up in the above, for shelving substrate (substrate 1000 in figure, close to element 1630)。
The disk that element 1630 is substantially thick, but it has the slit for being connected to support 1640 gone up in its lower section。
Figure 17 is with reference to present invention application in certain situation, and wherein susceptor includes disc body 1701 and multiple (such as, three or four or five or six) support component 1720.
Main body 1701 includes multiple through hole, and element 1720 is inserted in this through hole。
Support component 1720 has the resting surface (being illustrated by the broken lines) of the patterning according to the present invention gone up in the above, for shelving substrate (substrate 1000 in figure, close to element 1720)。
The disk that element 1720 is substantially thick, but it has the slit in the hole for being connected to main body 1701 gone up in its lower section。
In fig. 17, central recess is shown on the back of susceptor body, and this central recess is for the rotation of guide main body self。
Claims (14)
1. for a susceptor for epitaxial growth reactor, it is made up of main body (601), and described main body has face (602), and described face includes at least one region (603) being applicable to receive epitaxially grown substrate to be subjected;Wherein, described region (603) have the resting surface (604) for shelving described substrate or are associated with described resting surface, and wherein said resting surface (604) is provided with pattern,
It is characterized in that, described pattern includes at least three plural number body (605A, 605B, 605C) of arcuate recess (606)。
2. susceptor according to claim 1, wherein, each plural number body (605A, 605B, 605C) of groove (606) extends in the different independent sector (607A, 607B, 607C) of described resting surface (604)。
3. susceptor according to claim 2, wherein, the described sector (607A, 607B, 607C) of described resting surface (604) is mutually equal。
4. the susceptor according to Claims 2 or 3, wherein, in each plural number body (605A, 605B, 605C), described groove (606) is separated from each other。
5. susceptor according to claim 4, wherein, the described groove (606) of each plural number body (605A, 605B, 605C) is parallel to each other。
6. according to susceptor in any one of the preceding claims wherein, wherein, described plural number body (605A, 605B, 605C) each groove (606) start from the first point (608) on the edge of described resting surface (604) and end on the edge of described resting surface (604) second point (609) in, described first point (608) and described second point (609) are away from each other。
7. according to susceptor in any one of the preceding claims wherein, wherein, described resting surface (604) is surrounded by annular groove (610)。
8. according to susceptor in any one of the preceding claims wherein, wherein, each groove (606) of described plural number body (605A, 605B, 605C) includes the first linear end extending part and the second linear end extending part that are equal to each other and are mutually inclined, and connects described first linear end extending part and the 3rd central circular extending part of described second linear end extending part。
9. according to susceptor in any one of the preceding claims wherein, wherein, the surface (611) between two grooves (606) is striated, coarse or annular knurl。
10. according to susceptor in any one of the preceding claims wherein, wherein, described resting surface (604) is for recessed。
11. according to susceptor in any one of the preceding claims wherein, wherein, described region is recess (603) or the projection of described main body (601)。
12. according to the susceptor according to any one of aforementioned claim 1 to 11, including at least one support component for described substrate, wherein, described support component has described resting surface, and at least one support component wherein said is arranged at least one region described。
13. the susceptor according to any one of claim 1 to 11, including at least one support component for described substrate and at least one support for described support component, at least one support wherein said includes hole, wherein said support component has described resting surface, and wherein said at least one support is arranged at least one region described, and at least one support component described inserts in described hole。
14. an epitaxial growth reactor, including at least one according to susceptor in any one of the preceding claims wherein, described susceptor is used for supporting and heating substrate。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ITCO2013A000058 | 2013-11-11 | ||
IT000058A ITCO20130058A1 (en) | 2013-11-11 | 2013-11-11 | SUSCECTOR WITH SHAPED PROCESSES IN THE SUBSTRATE SUPPORTING AREA |
PCT/IB2014/002357 WO2015068022A1 (en) | 2013-11-11 | 2014-11-06 | Susceptor with arched shape grooves on the substrates support surface |
Publications (2)
Publication Number | Publication Date |
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CN105705679A true CN105705679A (en) | 2016-06-22 |
CN105705679B CN105705679B (en) | 2019-06-07 |
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Application Number | Title | Priority Date | Filing Date |
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CN201480061427.0A Active CN105705679B (en) | 2013-11-11 | 2014-11-06 | Susceptor with the arcuate recess in substrate support surface |
Country Status (3)
Country | Link |
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CN (1) | CN105705679B (en) |
IT (1) | ITCO20130058A1 (en) |
WO (1) | WO2015068022A1 (en) |
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ITUB20154925A1 (en) * | 2015-11-03 | 2017-05-03 | L P E S P A | SUSCECTOR WITH ASYMMETRICAL RECESSES, REACTOR FOR EPITAXIAL DEPOSITION AND PRODUCTION METHOD |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5476548A (en) * | 1994-06-20 | 1995-12-19 | Applied Materials, Inc. | Reducing backside deposition in a substrate processing apparatus through the use of a shadow ring |
US5534073A (en) * | 1992-09-07 | 1996-07-09 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor producing apparatus comprising wafer vacuum chucking device |
US6264467B1 (en) * | 1999-04-14 | 2001-07-24 | Applied Materials, Inc. | Micro grooved support surface for reducing substrate wear and slip formation |
WO2007131547A1 (en) * | 2006-05-15 | 2007-11-22 | Aixtron Ag | Semiconductor control device for a cvd or rtp process |
US20100129990A1 (en) * | 2007-08-03 | 2010-05-27 | Shin-Etsu Handotai Co. Ltd | Susceptor and method for manufacturing silicon epitaxial wafer |
-
2013
- 2013-11-11 IT IT000058A patent/ITCO20130058A1/en unknown
-
2014
- 2014-11-06 WO PCT/IB2014/002357 patent/WO2015068022A1/en active Application Filing
- 2014-11-06 CN CN201480061427.0A patent/CN105705679B/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5534073A (en) * | 1992-09-07 | 1996-07-09 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor producing apparatus comprising wafer vacuum chucking device |
US5476548A (en) * | 1994-06-20 | 1995-12-19 | Applied Materials, Inc. | Reducing backside deposition in a substrate processing apparatus through the use of a shadow ring |
US6264467B1 (en) * | 1999-04-14 | 2001-07-24 | Applied Materials, Inc. | Micro grooved support surface for reducing substrate wear and slip formation |
WO2007131547A1 (en) * | 2006-05-15 | 2007-11-22 | Aixtron Ag | Semiconductor control device for a cvd or rtp process |
US20100129990A1 (en) * | 2007-08-03 | 2010-05-27 | Shin-Etsu Handotai Co. Ltd | Susceptor and method for manufacturing silicon epitaxial wafer |
Also Published As
Publication number | Publication date |
---|---|
ITCO20130058A1 (en) | 2015-05-12 |
CN105705679B (en) | 2019-06-07 |
WO2015068022A1 (en) | 2015-05-14 |
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