CN105702772A - 一种基于一维阵列纳米线的紫外光探测器 - Google Patents
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Abstract
一种一维阵列纳米线的紫外光探测器的制备方法，包括配置前驱液在低压近场静电纺丝，控制喷丝头与收集装置之间的纺丝距离为0.4-1.5cm，纺丝电压在0.6-3kV，精确制备一维阵列纳米线；利用镀膜技术在一维阵列纳米线两端镀上电极即可制备单根纳米线或多根纳米线的紫外光探测器。该器件在300nm的紫外光波长下具有良好的循环响应。该方法利用伺服电机控制收集装置，确保了一维阵列纳米线的精确沉积；刚性衬底可自由选择来收集阵列纳米线；纳米线可交叉排列或有序排列，从而保证阵列纳米线的多样性和灵活性。<!-- 2 -->
Description
技术领域：
本发明属于阵列纳米线器件制备技术领域，特别涉及一种精确组装基于一维阵列纳米线的紫外光探测器的方法。
背景技术：
随着纳米科技在全球的持续快速发展，纳米材料特别是一维纳米材料受到了科研工作者的广泛关注。一维纳米材料具有较大的比表面积、高的表面活性和特殊的光、电、磁以及催化性能，是能够有效传输电荷的最小维度的结构，可以作为基本结构单元实现自下而上的器件组装，对于光学器件、传感器件、微电子学等器件微型化方向的发展提供了广阔的应用前景。
静电纺丝技术是一种简单、高效、在室温下即可持续制备超细连续的一维纳米材料的方法。电纺纤维独特的结构优势使其在众多领域受到关注，然而传统静电纺丝技术制备的杂乱无序的无纺布形式的纤维膜结构已不能再满足器件微型化等特定的需求，限制了电纺纤维在很多方面的应用。因此，制备结构有序、形貌可控的阵列纳米纤维显得越来越重要。阵列结构的一维微纳米结构能够为载流子提供更为直接的传输通道，有助于提高器件的各方面性能，例如，提高晶体管的载流子场迁移率、光电传感器的响应速度以及太阳能电池的转换效率等。其中，低压近场静电纺丝技术能够精确控制微纳米纤维的沉积位置，从而制备有序、交叉等阵列结构或更加复杂的图案化结构的微纳米纤维。
紫外探测技术在军事方面和民用方面均表现出广阔的应用前景，例如紫外通讯、导弹预警、明火探测等，是继红外和激光探测技术之后的又一重要光探测手段。但是由于纳米工艺和技术上的问题，特别是材料生长和晶片加工的难题，进展一直十分缓慢。目前对于单根纳米线器件的研究工作占主要地位，而在纳米尺度构造单根纳米线器件，大多需要使用价格昂贵的聚焦离子束或电子束曝光等复杂工艺，且目前依然没有有效的手段来实现器件的大规模集成。另外，一维纳米线阵列紫外光器件所研究的对象是多根纳米线的整体行为，并从中获取关于纳米材料有价值的性能，这将为开发新一代紫外光纳米器件奠定坚实的基础。
为了克服现有技术和器件上存在的缺点，设计了一种新颖的方法来研制基于一维阵列纳米结构的紫外光探测器，并进一步提高紫外光探测器的各种性能参数。同时利用这种方法还可以用来构筑更加复杂的P-N结半导体器件，例如组装基于单根或多根的同质、异质纳米纤维阵列的P-N结电子器件。
发明内容：
实现本发明包括两步：
1)一维阵列纳米线的精确制备，配置前驱液，利用低压近场静电纺丝技术来有效调控电纺纳米线的形貌和沉积位置，制备一维阵列纳米线。
2)紫外光探测器的构成，利用镀膜技术在一维阵列纳米线两端镀上电极即可制备单根纳米线或多根纳米线的紫外光探测器。
该低压近场静电纺丝技术的主要原理图如图1所示，是通过降低喷丝头与收集装置之间的纺丝距离为0.4-1.5cm和控制纺丝电压在0.6-3kV，实现抑制带电射流的鞭动不稳定性，控制喷射细流在收集板上的精确沉积，通过计算机软件调节二维运动台来带动收集装置的运动轨迹和运动速度来精确控制电纺纳米线的有序沉积和沉积数目。
本发明与现有技术相比具有以下特点和优势：(1)利用伺服电机控制收集装置，控制精度高达1μm，使纤维沉积的有序度更高，更易于控制纳米线的沉积间距和数目，确保了一维阵列纳米线的精确沉积；(2)可自由选择刚性衬底(如Si衬底、SiO2衬底、玻璃衬底等)或柔性衬底(PET衬底、PI衬底、PU衬底、PDMS衬底等)来收集阵列纳米线，为制备特殊的柔性微电子功能器件等应用提供了有效途径；(3)能够根据需求选择一种或多种材料的纳米线交叉排列或依次有序排列，进而构建有机与有机、无机与无机、有机与无机材料的同质结或异质结，也可以选择P型材料与N型材料进行组装，构建P-N交叉异质结，从而保证阵列纳米线的多样性和灵活性。
下面通过实施例并结合附图做进一步说明。
附图说明：
图1为低压近场静电纺丝技术的主要原理示意图。
图2为多孔金属氧化物ZnO/SnO2纳米线阵列的显微照片图。
图3为所制备紫外光探测器在300nm的紫外光波长下的循环响应曲线图。
具体实施方式：
(1)一维阵列纳米线的制备：在室温下，按照摩尔比1:1将六水合硝酸锌(Zn(NO3)2·6H2O)粉末和四氯化锡(SnCl4)粉末混合，再加入适量的聚乙烯吡咯烷酮(PVP，130万分子量)粉末，最后放入无水乙醇和N,N-二甲基甲酰胺(DMF)的混合溶液中溶解。将混合后的溶液磁力搅拌4小时，直到混合溶液澄清透明均一的前驱体溶液。将1mL溶液注入纺丝器中，准备开始电纺。将纺丝器接高压直流电源的正极，并固定在离收集板的高度0.8cm处，纺丝电压设置为1kV。将干净的硅片固定于接高压电源负极的二维运动台上。打开高压电源，当喷丝头出现泰勒锥并开始纺丝时，打开计算机软件和控制箱，调整二维运动台的运动加速度和运动轨迹，通过近场电纺技术，在刚性硅衬底上制备纳米线阵列。纺丝结束后，将其放入马弗炉中退火，退火温度为550℃，时间为2小时，然后自由冷却至室温，最后得到纯净的多孔金属氧化物的ZnO/SnO2纳米线阵列，如图2所示。
(2)紫外光探测器的构成，将一维阵列纳米线固定于载玻片上，放入真空蒸发镀膜机中，在10-4Pa的真空度环境下，镀上50nm的金电极。在光学显微镜下，即可用探针垂直于于ZnO/SnO2纳米线阵列划开约10μm的沟道，即可完成在刚性硅衬底上制备ZnO/SnO2纳米线阵列的紫外光探测器件的制备。
(3)阵列器件的紫外光性能测试：利用探针台，在金电极两端压上探针，用一定波长的紫外光照射阵列器件，通过4200SCS半导体分析测试系统测试和收集实验数据，最后得出器件在300nm的紫外光波长下具有良好的循环响应，曲线如图3所示。
Claims (1)
1.一种一维阵列纳米线的紫外光探测器的制备方法，包括配置前驱液在低压近场静电纺丝，控制喷丝头与收集装置之间的纺丝距离为0.4-1.5cm，纺丝电压为0.6-3kV，精确制备一维阵列纳米线；利用镀膜技术在一维阵列纳米线两端镀上电极即可制备单根纳米线或多根纳米线的紫外光探测器。
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| CN106400314A (zh) * | 2016-09-10 | 2017-02-15 | 华南理工大学 | 一种结构仿生皮肤细胞外基质的复合纳米纤维膜及其制备方法与应用 |
| CN107591457A (zh) * | 2016-07-08 | 2018-01-16 | 中国科学院金属研究所 | 一种3d树枝状结构的光电探测器及其制作方法 |
| CN113130789A (zh) * | 2019-12-31 | 2021-07-16 | Tcl集团股份有限公司 | 一种量子点发光二极管及其制备方法 |
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| CN101866975A (zh) * | 2010-05-29 | 2010-10-20 | 兰州大学 | 一种半导体传感器及制备方法 |
| CN102185034A (zh) * | 2011-04-21 | 2011-09-14 | 河南大学 | 单根ZnO纳米线肖特基势垒紫外探测器的制备方法 |
| CN103966570A (zh) * | 2013-02-04 | 2014-08-06 | 国家纳米科学中心 | 单晶In2Te3纳米线及其制备以及准一维In2Te3纳米结构的宽谱光探测器及其制备 |
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| CN106400314A (zh) * | 2016-09-10 | 2017-02-15 | 华南理工大学 | 一种结构仿生皮肤细胞外基质的复合纳米纤维膜及其制备方法与应用 |
| CN113130789A (zh) * | 2019-12-31 | 2021-07-16 | Tcl集团股份有限公司 | 一种量子点发光二极管及其制备方法 |
| CN113130789B (zh) * | 2019-12-31 | 2022-06-24 | Tcl科技集团股份有限公司 | 一种量子点发光二极管及其制备方法 |
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