CN105702753B - A kind of ferroelectric thin film device with bulk photovoltaic effect - Google Patents
A kind of ferroelectric thin film device with bulk photovoltaic effect Download PDFInfo
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- CN105702753B CN105702753B CN201610039249.2A CN201610039249A CN105702753B CN 105702753 B CN105702753 B CN 105702753B CN 201610039249 A CN201610039249 A CN 201610039249A CN 105702753 B CN105702753 B CN 105702753B
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- 239000010409 thin film Substances 0.000 title claims abstract description 73
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- 230000008021 deposition Effects 0.000 claims abstract description 8
- 239000010408 film Substances 0.000 claims description 17
- 230000005621 ferroelectricity Effects 0.000 claims description 15
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
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- 238000005036 potential barrier Methods 0.000 description 7
- 230000007246 mechanism Effects 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000011160 research Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000000034 method Methods 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention discloses a kind of ferroelectric thin film device with bulk photovoltaic effect, including substrate, ferroelectric thin film is deposited on the substrate, the polarised direction of the ferroelectric thin film eliminates the contribution of depolarization field in the photovoltaic effect of ferroelectric thin film device perpendicular to its surface；Deposition has the central electrode in regular polygon on the ferroelectric thin film, also deposition has the edge electrodes of multiple regular polygons on ferroelectric thin film, the quantity of edge electrodes is equal with the side number of the central electrode, edge electrodes array is around central electrode, the each edge of central electrode is parallel with the side of adjacent edge electrodes and spacing distance is L, the edge electrodes are identical with the material of central electrode and prepare simultaneously, eliminate the contribution of Schottky barrier in the photovoltaic effect of ferroelectric thin film device.When particularly ferroelectric thin film is T-phase, the contribution of domain wall in the photovoltaic effect of ferroelectric thin film device can be also eliminated, so as to obtain the ferroelectric thin film device with bulk photovoltaic effect.
Description
Technical field
The invention belongs to ferroelectric material field, and in particular to a kind of ferroelectric thin film device with bulk photovoltaic effect.
Background technology
Ferroelectric material is because with unusual photovoltaic effect, (photovoltaic voltage is not by crystal energy gap (Eg) limitation,
Even than EgHigh 2~4 orders of magnitude, up to 103~105V/cm) receive much concern.
Before half a century, people have discovered that ferroelectricity photovoltaic is imitated in non-centrosymmetrical various ferroelectric materials
Should, stable photovoltaic effect can be produced along the direction of polarization.It is generally believed that the photovoltaic effect of ferroelectric material is spontaneous originating from its
Polarization, one of distinguishing feature of ferroelectricity photovoltaic be exactly when polarised direction changes under electric field action, photogenerated current also with
Change, and photoproduction sense of current is opposite with polarised direction all the time inside ferroelectric material.Ferroelectricity photovoltaic effect with
Traditional pn-junction except that：In traditional pn-junction, light activated electron hole pair is divided rapidly by the built in pn-junction
From making drift motion in the opposite direction, finally reach electrode, then collected by electrode.Therefore, in theory, pn-junction is too
Photovoltage produced by positive energy battery is limited by semiconductor band gap width, typically less than 1V.For ferroelectricity photovoltaic effect
For, the photovoltage experimentally obtained is proportional to the distance between polarization intensity and electrode, without being limited by band gap width
System, can reach 104V.The photovoltage of solar cell is higher, it is meant that the electric energy of generation is more, and efficiency is higher.
Although about the research existing decades of ferroelectricity photovoltaic effect, up to now, also nobody can definitely point out
Also there is dispute always in the principle of this material photovoltaic process, the origin on ferroelectric material photovoltaic effect.In general,
The factor of influence ferroelectric material photovoltage has a variety of, the distance between such as two electrodes, the intensity of light, the conduction of material
Property, remanent polarization, crystal orientation, crystallite dimension, Lacking oxygen, domain wall and interface etc..But essentially, ferroelectricity light
The mechanism of volt effect mainly has following several：
(1) bulk photovoltaic effect
This mechanism thinks that photovoltage results from the inside of ferroelectric material, therefore is referred to as " bulk photovoltaic effect ", ferroelectricity material
Material is then used as " current source ".Stabling current (the photogenerated current produced under illumination：Js) with having non-centrosymmetry ferroelectric material
Property is relevant.In with noncentrosymmetric crystal, the state that electronic driven amount is k is to the probability that momentum is the transition of k ' states institute
It is different to the probability that momentum is k-state transition from the state that momentum is k ' from it, it result in the MOMENTUM DISTRIBUTION of photo-generated carrier not
Symmetrically, so that stable electric current can be formed under light illumination.It can be expressed as by the total current density of ferroelectric material (J)：
J=Js+(σd+σph)E (1)
In formula, σdAnd σphConductance of the ferroelectric material under details in a play not acted out on stage, but told through dialogues and light field, i.e. dark conductance and photoconduction are represented respectively；E=
V/d is the electric field inside ferroelectric material under illumination, depending on the distance between applied voltage (V) and two electrodes (d).Due to electrode
The distance between generally all than larger, and the dark conductance of most of ferroelectric materials and photoconduction are all very low, therefore by ferroelectricity
The solar photovoltaic device that material is constituted can be considered as current source.In ferroelectric material, the open-circuit voltage V under illuminationocCan be with table
It is shown as：
As can be seen from the above equation, if total electrical conductivity (σd+σph) be not obviously dependent on luminous intensity if, open-circuit voltage Voc
With circuit photocurrent density JscIt is linearly increasing, show that open-circuit voltage is proportional to short-circuit photocurrent Ioc(because short-circuit photocurrent IocDeng
In circuit photocurrent density JsIt is multiplied by the area of current flowing), the ratio of open-circuit voltage and short-circuit photocurrent is equal to sample
Thickness.That is, if the solar photovoltaic device being made up of ferroelectric material can be considered as into current source, photoelectric current is just
It is invariable, then the value of short-circuit photovoltage is just proportional to the thickness of material.
(2) domain wall is theoretical
Yang et al. is in research bismuth ferrite (BiFeO3, write a Chinese character in simplified form BFO) film photovoltaic effect when find, photovoltage in BFO
As the increase of domain wall quantity in polarised direction is linearly increasing, obvious photovoltaic effect is then not observed in polarised direction
Should.Domain wall theory thinks, because polarization intensity can produce one-component at domain wall, its potential produced at domain wall
For~10mV, domain wall width is about 2nm, thus be polarized at domain wall produce electric field be up to 5 × 106V/m, this value is much larger than pn
Internal electric field in knot, is considered as the origin that ferroelectric material produces photovoltaic effect, is also the main drive for separating photo-generated carrier
Power.Due to there are many electricdomains in ferroelectric material, joined end to end after being polarized between farmland and farmland, and domain wall is just as being together in series
Nanoscale photovoltaic generator, photovoltage gradually adds up along polarised direction.This mechanism and the solar-electricity connected
The concept in pond is similar, and its output voltage is each unit sum.If the distance between two electrodes are bigger, electricdomain is got over
Many, the photovoltage produced under illumination between two electrodes is also higher, and this model can be very good to explain photovoltaic effect.
Further, since producing continuous photoelectric current under illumination, domain wall is then treated as current source, total open-circuit voltage in some documents
(photovoltage) VocThe distance between the current density of ferroelectric material, electrical conductivity and electrode J under illuminationscDetermine.With body photovoltaic
Unlike effect, domain wall is theoretical to be attributed to exciting for carrier at domain wall by photovoltaic effect, it is believed that light swashs outside domain wall
The carrier recombination velocity of hair quickly, can ignore bulk photovoltaic effect.
Can be wide much larger than forbidden band although can be very good explanation photovoltaic effect, i.e. photovoltage with domain wall theory
Degree, however, there is some experimental phenomenas to be only at all unaccountable with neticdomain wall theory, it is necessary to consider that bulk photovoltaic effect is managed
By.For example, according to domain wall model, because the landing of potential is caused by polarization charge at domain wall, therefore photoelectric current independent of
In the polarization direction of light.However, researchers observe photoelectric current with incident light polarization direction in the ferroelectric materials such as BFO
The phenomenon for changing and changing, shows that the origin of ferroelectric material photovoltaic effect is more complicated than what everybody envisioned.In ferroelectricity light
Lie prostrate in effect, because electricdomain and bulk effect are all contributed to photogenerated current, therefore, if both are mutually long, photogenerated current is larger,
Conversely, photogenerated current is smaller, this can explain why do not observed parallel to domain wall direction in yang et al. experiment
To photoelectric current.
(3) schottky junction effect
When ferroelectric material and electrode contact formation Schottky barrier, interface energy band will be bent, and be produced under illumination
Electron hole pair will be driven by internal field near electrode, and the photoelectric current of generation is largely by Schottky barrier and depletion layer
Depth determine.According to this model, the size of photovoltage is still confined to ferroelectricity produced by inside Schottky barrier
The band gap of material, research ferroelectricity photovoltaic effect early stage Schottky effect caused by voltage be often ignored, be because
It is well below the unusual photovoltage in most of ferroelectric crystal.But Schottky effect becomes in ferroelectric thin film photovoltaic device
It is more and more important, because the photovoltaic voltage output in these devices is generally smaller.In general, by identical electrodes and ferroelectricity material
Expect constitute the ferroelectric photovoltaic device with sandwich structure in, Schottky barrier generation photoelectric current contribution be it is non-existent,
Because by two identical electrodes up and down with two schottky junctions that ferroelectric material is constituted being back-to-back, mutually containment, because
Photovoltage and electric current produced by this are offseted.However, according to different types of electrode, it is possible to achieve with vertical stratification
Ferroelectric photovoltaic device in photovoltaic effect enhancing.Because schottky junction effect is unrelated with the polarised direction of ferroelectric material, according to
This feature can just distinguish the contribution of schottky junction and bulk photovoltaic effect to photoelectric current.But some researchers think, Xiao Te
The height of base potential barrier can be regulated and controled by changing its polarised direction to ferroelectric material application electric field.Also, work as Schottky
When potential barrier and the polarised direction of ferroelectric material change, the symbol of photovoltage also changes therewith.For example, by
In the ferroelectricity diode with vertical stratification that Au/BFO/Au is constituted, photogenerated current and photovoltage are all with polarised direction
Change and change.Initially BFO film bulk photovoltaic effects are considered to produce the main cause of this phenomenon, but subsequent research table
It is bright, what the change of Schottky barrier of the BFO films in polarization process was caused mainly due to the migration of Lacking oxygen, and when oxygen is empty
When position migration is frozen at low temperature, photovoltaic effect no longer changes with the transformation of polarised direction.
(4) depolarization field effect
For the ferroelectric thin film in polarized state, film surface has the polarization charge of high concentration, if do not examined
Consider screen effect, these highdensity polarization charges will produce a huge electric field in ferroelectric layer.Using BFO films as
Example, its remanent polarization is about 100 μ C/cm2, the electric field produced by the polarization charge not shielded is up to 3 × 1010V/m.When
When ferroelectric thin film is with metal or semiconductor contact, surface charge caused by residual polarization will be by the freedom in metal or semiconductor
Charged moiety is shielded.Generally, why surface charge is not exclusively by shielding is because of polarization charge and freely compensates charge centroid not
Overlap, electric field, i.e. depolarization field are just produced inside whole ferroelectric thin film.Depolarization field may be very big, for example, be for thickness
For 10 to 30nm BTO films, by BTO and SrRuO3Depolarization field in the sandwich structure that electrode is constituted is about 45 ×
106V/m.So high depolarization field is considered as the main drive for separating photo-generated carrier, while also indicating that unusual photovoltaic
The shield degree of effect and polarization charge is closely related.The distribution of shielded packaged food depends on ferroelectric material and metal (or semiconductor)
Property, such as remanent polarization, free charge density and dielectric constant.On the other hand the polarization charge pair not shielded
The influence of depolarization field depends primarily on the thickness of ferroelectric layer：The small ferroelectric layer result depolarization field of thickness is big.In general, half
Conductor contacts the depolarization field produced with ferroelectric material and contact produced depolarization field with ferroelectric material greatly than metal, this be by
There is less free charge density and larger dielectric constant in semi-conducting material, so as to produce weaker screen effect.
Generally speaking, the mechanism of influence ferroelectric thin film photovoltaic effect has a variety of, bulk effect, depolarization field, electricdomain, interfacial potential
Influence colleague of the factors such as base to photovoltaic effect is present, and there is certain contact each other.Therefore, how to distinguish every kind of
Mechanism to the contribution of ferroelectricity photovoltaic effect, understand fully that any mechanism is occupied an leading position to photovoltaic effect with weight in ferroelectric material
The meaning wanted.
In numerous ferroelectric materials, bismuth ferrite (BFO) is due to larger polarization intensity, relatively small optical ribbon
Gap and receive much concern.Due to there is lattice mismatch between BFO films and substrate, therefore BFO films will be stressed effect.When should
When power is smaller, BFO belongs to diamond structure (rhombohedral Structure, i.e. R phases).If the BFO films of R phases
The face internal pressure stress being subject to continues to increase, then its lattice constant and structure will become different, so as to influence its physical property.c
The lattice constant in direction increases with the increase of stress, when stress reaches to a certain degree, and R phase in version is the four directions distorted
Crystal structure (tetragonal structure, i.e. T-phase).Lattice constant in face and outside face is respectively C/a=1.26, belongs to P4mm point groups.
For R phases BFO, its polarised direction is diagonally.Therefore, when BFO photovoltaic effects are studied, due to
There is component (parallel to surface) in face and outside face in polarised direction (opposite direction of depolarization field), therefore right (perpendicular to surface)
Photovoltaic effect just has a contribution.The sheet of bulk photovoltaic effect is thus hardly resulted on the occasion of because measured bulk photovoltaic effect
In just contain the contribution of depolarization field.If in addition, the electrode of BFO two sides (upper/lower electrode or left and right electrode) is asymmetric
Words, resulting photovoltaic effect includes the contribution of interface potential barrier in addition to bulk photovoltaic effect.From unlike R phases, T-phase
BFO polarised direction is perpendicular to its surface.
The content of the invention
In order to measure the photovoltaic effect that ferroelectric thin film is intrinsic, the invention provides a kind of ferroelectric thin with bulk photovoltaic effect
Membrane module, deposits the central electrode of regular polygon on ferroelectric thin film, array and central electrode around central electrode
The equal edge electrodes of side number, each edge of central electrode is parallel and separated by a distance with the side of adjacent edge electrodes, institute
State central electrode identical with the material of edge electrodes and while prepare, measure in the photovoltaic effect of the ferroelectric thin film just without Xiao
Special base potential barrier (i.e. interface potential barrier)；The polarised direction of ferroelectric thin film is perpendicular to ferroelectric thin film surface simultaneously, then central electrode and side
The connecting line of edge electrode is vertical with depolarization field, then measures the tribute for also not including depolarization field in the photovoltaic effect of the ferroelectric thin film
Offer, there was only 180 degree domain wall when ferroelectric thin film is T-phase, domain wall is also vertical with ferroelectric thin film surface, then measures the ferroelectric thin
The contribution without domain wall is not included in the photovoltaic effect of film, only the intrinsic bulk photovoltaic effect of ferroelectric thin film yet.
The present invention is achieved through the following technical solutions：
Ferroelectric thin film is deposited on a kind of ferroelectric thin film device with bulk photovoltaic effect, including substrate, the substrate, the iron
The polarised direction of conductive film is perpendicular to its surface；Deposition has the central electrode in regular polygon, ferroelectric thin on the ferroelectric thin film
Also deposition has the edge electrodes of multiple regular polygons on film, and the quantity of edge electrodes is equal with the side number of the central electrode, side
Edge electrod-array is around central electrode, and each edge of central electrode is parallel with the side of adjacent edge electrodes and spacing distance
For L, the edge electrodes are identical with the material of central electrode and prepare simultaneously.
Further, the ferroelectric thin film is T-phase, and T-phase ferroelectric thin film only has 180 degree domain wall, domain wall and ferroelectric thin film surface
It is also vertical, then measures the contribution that domain wall is free of in the photovoltaic effect of the ferroelectric thin film.
Further, the length of side d1 of the central electrode, the length of side d2, d1 >=d2 of the edge electrodes>L, central electrode
The length of side d2 of length of side d1 and edge electrodes is far longer than central electrode and edge electrodes to the spacing distance between parallel side
L, central electrode and adjacent edge electrodes can be considered as capacity plate antenna, between electric field be exactly parallel electric field.
Further, the length of side d2 of edge electrodes>0.3mm, central electrode and the spacer on the side of neighboring edge electrode runs parallel
From 0<L<0.1mm.
Further, the central electrode, edge electrodes material are all mutually Ag, Au, Cu, Pt, ITO one of which.
Beneficial effects of the present invention：
The ferroelectric thin film device with bulk photovoltaic effect of the present invention, while in deposition materials identical on ferroelectric thin film
Heart electrode and multiple edge electrodes, the polarised direction of the ferroelectric thin film is perpendicular to the surface of ferroelectric thin film, when ferroelectric thin film is T-phase
When there was only 180 degree domain wall, domain wall be also with ferroelectric thin film surface it is vertical, then in the photovoltaic effect of the ferroelectric thin film measured just
Contribution not comprising Schottky barrier (i.e. interface potential barrier), depolarization field and domain wall, only intrinsic bulk photovoltaic effect.By
Relevant with the polarization direction of incident light in bulk photovoltaic effect, the ferroelectric thin film device of the invention array around central electrode is more
The individual edge electrodes parallel with the side of central electrode, can distinguish measuring center electrode in the case where not changing incident light
Photovoltaic effect between every face and neighboring edge electrode, obtained from photovoltaic effect and angular relationship (and photovoltaic effect with
The relation of the polarization direction of incident light).
Brief description of the drawings
Fig. 1 is the structural representation of the ferroelectric thin film device of the present invention；
Fig. 2 is Fig. 1 top view；
Fig. 3 is the XRD diffracting spectrums of T-phase bismuth ferrite thin film；
Fig. 4 is numbering of the photovoltaic effect to electrode for measuring ferroelectric thin film device；
Fig. 5 is the tendency chart of short-circuit photocurrent value between central electrode and different edge electrodes.
Reference
1- substrates；2- bismuth ferrite thin films；3- central electrodes；4- edge electrodes.
Embodiment
The invention will be further described with reference to the accompanying drawings and examples.
As depicted in figs. 1 and 2, on a kind of ferroelectric thin film device with bulk photovoltaic effect, including substrate 1, the substrate 1
Ferroelectric thin film 2 is deposited, the polarised direction of the ferroelectric thin film 2 is then measured in the photovoltaic effect of ferroelectric thin film just perpendicular to its surface
Contribution not comprising depolarization field.Optimization, the ferroelectric thin film 2 is T-phase, only 180 degree domain wall, domain wall and ferroelectric thin film table
Face is also vertical, then measures and also do not include the contribution without domain wall in the photovoltaic effect of the ferroelectric thin film.The ferroelectric thin film 2
Upper deposition has also deposits the edge electrodes 4 for having multiple regular polygons, edge on the central electrode 3 in regular polygon, ferroelectric thin film 2
The quantity of electrode 4 is equal with the side number of the central electrode 3, and the array of edge electrodes 4 is around central electrode 3, central electrode 3
Each edge is parallel with the side of adjacent edge electrodes 4 and spacing distance is L, the material of the edge electrodes 4 and central electrode 3
It is identical and prepare simultaneously, then the tribute in the photovoltaic effect of the ferroelectric thin film measured also without Schottky barrier (i.e. interface potential barrier)
Offer, then the photovoltaic effect that the ferroelectric thin film device is measured is only the intrinsic bulk photovoltaic effect of ferroelectric thin film.Multiple edge electrodes
Array is in the edge of central electrode and edge electrodes in while parallel and separated by a distance, the Ke Yi adjacent with central electrode
In the case of not changing incident light, the photovoltaic effect between every face of difference measuring center electrode and neighboring edge electrode, from
Obtained from photovoltaic effect and angular relationship (and relation of the polarization direction of photovoltaic effect and incident light), it is simple in construction, it is convenient
Measurement.Optimization, the length of side d1, the length of side d2 of the edge electrodes 4, d1 >=2 of the central electrode 3>L, the side of central electrode
Long d1 and edge electrodes length of side d2 are far longer than central electrode and edge electrodes to the spacing distance L between parallel side.
The length of side d2 of edge electrodes 4>0.3mm, the spacing distance 0 on the side parallel with neighboring edge electrode 4 of central electrode 3<L<0.1mm.
The central electrode 3, the material of edge electrodes 4 are all mutually Ag, Au, Cu, Pt, ITO one of which.In the present embodiment, ferroelectric thin film 2
For BFO films, the selection lattice constant of substrate 1 is less than the LaAlO of the lattice constant of BFO films3、YAlO3One of which, easy shape
Into the bismuth ferrite in four directions.The bismuth ferrite of rhombus is easily grown in the case of other；D1=d2=0.3mm, L<0.1mm；D1=
D2=5mm, L<1mm；D1=d2=0.1mm, L<0.01mm.
The test of photovoltaic effect is carried out to the bismuth ferrite thin film device with bulk photovoltaic effect in the present embodiment：Fig. 3 is T
The XRD diffracting spectrums of phase bismuth ferric film, BFO films are T-phase, are epitaxial growths, only (00L) wherein L can go 1,2,
3 ... diffraction maximums, and produced without other dephasigns.Optical maser wavelength used in the test of photovoltaic effect is 408nm, and power is
50mW linearly polarized light.Measuring instrument is digital sourcemeter keithley2611.Fig. 4 is the photovoltaic for measuring ferroelectric thin film device
Effect measures result as shown in figure Fig. 5 to the numbering of electrode.Fig. 5 is different angles (i.e. a-b1 (being in 0 ° with horizontal direction), a-
B2 (45 °) ... a-b8 (315 °)) when, the size of short-circuit photocurrent between central electrode and corresponding edge electrode.Can be with
See, in the case where not changing incident light, resulting short-circuit photocurrent and angle have certain dependence (equivalent to
Do not change angle, and change the polarization direction of incident light).Due in the ferroelectric thin film device polarised direction and domain wall perpendicular to iron
Sour bismuth thin film surface, the electrode on bismuth ferrite thin film surface is same electrode, therefore it is by body light that experimental result, which is directly demonstrated,
Lie prostrate the photoelectric current produced by effect.
Claims (5)
1. a kind of ferroelectric thin film device with bulk photovoltaic effect, it is characterised in that：Including substrate (1), sunk on the substrate (1)
Product ferroelectric thin film (2), the polarised direction of the ferroelectric thin film (2) is perpendicular to its surface；There is in just deposition on the ferroelectric thin film (2)
Also deposition has the edge electrodes (4) of multiple regular polygons, edge electrodes on polygonal central electrode (3), ferroelectric thin film (2)
(4) quantity is equal with the side number of the central electrode (3), and edge electrodes (4) array is around central electrode (3), center
The each edge of electrode (3) is parallel with the side of adjacent edge electrodes (4) and spacing distance is L, the edge electrodes (4) and center
The material of electrode (3) is identical and prepares simultaneously.
2. a kind of ferroelectric thin film device with bulk photovoltaic effect according to claim 1, it is characterised in that：The ferroelectricity
Film (2) is T-phase.
3. a kind of ferroelectric thin film device with bulk photovoltaic effect according to claim 1 or 2, it is characterised in that：It is described
The length of side d1, the length of side d2, d1 >=d2 of the edge electrodes (4) of central electrode (3)>L.
4. a kind of ferroelectric thin film device with bulk photovoltaic effect according to claim 3, it is characterised in that：Edge electrodes
(4) length of side d2>0.3mm, the spacing distance 0 on central electrode (3) side parallel with neighboring edge electrode (4)<L<0.1mm.
5. a kind of ferroelectric thin film device with bulk photovoltaic effect according to claim 4, it is characterised in that：The center
Electrode (3), edge electrodes (4) material are all mutually Ag, Au, Cu, Pt, ITO one of which.
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| CN102176472A (en) * | 2011-02-21 | 2011-09-07 | 华东师范大学 | Bulk effect solar cell material and preparation method thereof |
| CN102651428A (en) * | 2012-05-24 | 2012-08-29 | 常州大学 | Fabrication method of gradient ferroelectric film solar cell |
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| CN102176472A (en) * | 2011-02-21 | 2011-09-07 | 华东师范大学 | Bulk effect solar cell material and preparation method thereof |
| CN102651428A (en) * | 2012-05-24 | 2012-08-29 | 常州大学 | Fabrication method of gradient ferroelectric film solar cell |
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