CN105700266B - A kind of surface plasmons electric absorption optical modulator based on graphene - Google Patents
A kind of surface plasmons electric absorption optical modulator based on graphene Download PDFInfo
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Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/17—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on variable-absorption elements not provided for in groups G02F1/015 - G02F1/169
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention discloses a kind of surface plasmons electric absorption optical modulator based on graphene, including：Substrate, the first micro-nano waveguide and the second micro-nano waveguide stacked on substrate, dielectric layer between the first micro-nano waveguide and the second micro-nano waveguide and the first single-layer graphene, and connect respectively with first micro-nano waveguide and the second micro-nano waveguide and to apply the first electrode and second electrode of modulation voltage；At least one of described first micro-nano waveguide and the second micro-nano waveguide are metal waveguide；First single-layer graphene is located in one of between metal waveguide and dielectric layer；And one of electrode is connected by first single-layer graphene with corresponding metal waveguide.The present invention uses the structure design of waveguide vertical arrangement, in conjunction with the advantage of graphene and SPP, so that modulation depth is higher than and has electroabsorption modulator, reach 70% or more；And the structure capacitive of device is smaller, greatly improves the Whole Response speed of device.
Description
Technical field
The present invention relates to graphenes and application of the surface plasmons (SPP) in micro-nano electro-optical system, especially relate to
And a kind of surface plasmons electric absorption optical modulator based on graphene.
Background technology
Optical modulator can be realized quickly accurate to signal as one of most important device in modern photoelectric communication system
True coded modulation.High speed, broadband are explored, the optical modulator of cramped construction is target and the direction of the area research.
Graphene as a kind of novel two-dimensional layer material, have with graphene interaction is strong, wide bandwidth of operation and
The advantages that high-speed cruising, is expected to realize the high speed of optical modulator, broadband and compact-sized requirement.Surface plasmons effect
The strong constraint to light field may be implemented, can realize the operation to light field on smaller scale.
Currently, electroabsorption modulator based on graphene and based on graphene and surface plasmons in conjunction with and design
Electric absorption optical modulator by wide coverage, these modulators mostly have modulation bandwidth wide, are easy to metal oxide and partly lead
The features such as bulk channel or silicon base CMOS process compatible.But the tune that can be realized of current existing relevant modulator structure
Rate processed is all also very slow, and modulation depth is low, these problems so that such optical modulator is difficult to meet photoelectricity integrated system
It needs.
Invention content
The object of the present invention is to provide a kind of surface plasmons electric absorption optical modulator based on graphene, this
Kind modulator uses the design method of rectangular micro-nano waveguide vertical arrangement, and fully combines graphene and the advantage of SPP；It should
The significantly larger than current existing electroabsorption modulator based on graphene of the modulation depth of modulator, reaches 70% or more；Meanwhile
It is effective opposite between the optical modulator upper/lower electrode compared with using the electric absorption optical modulator of thin-film waveguide design method
Area very little so that the structure capacitive of device accomplishes very little, correspondingly so that the speed of response of device is greatly improved, energy
Enough reach tens GHz, it is even higher.
Specific technical solution of the present invention is as follows：
A kind of surface plasmons electric absorption optical modulator based on graphene, including：
Substrate, the first micro-nano waveguide and the second micro-nano waveguide stacked on substrate are located at the first micro-nano waveguide and second
Dielectric layer between micro-nano waveguide and the first single-layer graphene, and respectively with first micro-nano waveguide and the second micro-nano waveguide
It connects and to apply the first electrode and second electrode of modulation voltage；
At least one of described first micro-nano waveguide and the second micro-nano waveguide are metal waveguide；
First single-layer graphene is located in one of between metal waveguide and dielectric layer；
And one of electrode is connected by first single-layer graphene with corresponding metal waveguide.
Waveguide greatly reduces up and down effectively electricity by the way of being disposed vertically in the electric absorption optical modulator of the present invention
The relative area of pole, so that the structure capacitive of device can be made small, the response frequency of system is greatly improved.
Wherein, the substrate is the silicon-based substrate that upper surface has silicon oxide layer.
Preferably, first micro-nano waveguide is semiconductor waveguide or metal waveguide, second micro-nano waveguide
For metal waveguide.
In the present invention, the vertical structure of upper and lower two micro-nano waveguides composition is metal waveguide and metal waveguide or metal waveguide
And semiconductor waveguide.
Semiconductor waveguide carries out restrict with metal waveguide to surface plasma wave, prevents plasma wave substrate from drawing
Lead leakage.Meanwhile metal waveguide positioned at dielectric layer interface and semiconductor waveguide serve as speculum, are reflected back the SPP of leakage
Wave greatly improves the interaction strength of graphene and SPP waves, improves modulation depth.
Wherein, cadmium selenide, cadmium sulfide, cadmium telluride, titanium oxide, zinc oxide, gallium nitride and phosphorus may be used in semiconductor waveguide
Corresponding size can be grown by vapor deposition (CVD) or other synthetic methods by changing material preparations, this kind of materials such as indium
Flat waveguide structure, is operated by micro-nano later, semiconductor waveguide is transferred to target location, or directly utilize the side of etching
Formula, prepares the micro-nano waveguides such as corresponding silica, gallium nitride on silicon chip, semiconductor waveguide by the graphene of corresponding side with
Electrode is connected, and is applied in modulation voltage.
Further, it if the first micro-nano waveguide is substituted using metal waveguide, can be formed at upper and lower interface at this time strong
Local fields.The materials such as gold, silver, aluminium, copper, zinc and nickel may be used in metal waveguide, are prepared later by modes such as chemical syntheses
The metal waveguide of corresponding size.Metal waveguide is connected by graphene with electrode, and corresponding voltage is applied in.Photoelectricity integrated system
It is required that the size of related device, in micro-nano magnitude, for this purpose, we using upper and lower two bullions waveguide to being disposed vertically, dielectric layer uses
The structure of 30nm aluminium oxide has carried out emulation experiment, silver-colored waveguide thickness 100nm in experiment, is scanned point in the width to silver-colored waveguide
It is found in analysis, the optimal silver-colored duct width under the conditions of this kind is between 50nm to 300nm.
In the present invention, can single-layer graphene be only placed between dielectric layer and the metal waveguide of upper and lower side, simultaneously should
The electrode of side is connected yet by photoetching technique with graphene, the electrode of the other side then directly with semiconductor waveguide or metal waveguide
It is connected.
In addition, the lower interface of the dielectric layer is equipped with the second single-layer graphene, the second single-layer graphene and described the
One electrode is connected, and the first single-layer graphene is connected with the second electrode.
The present invention can place single-layer graphene at the upper and lower interface of dielectric layer, upper and lower single-layer graphene respectively with up and down
Two electrodes are connected, and metal waveguide and semiconductor waveguide are connected by upper and lower single-layer graphene with electrode respectively, and are applied in electricity
；Furthermore, it is possible to reduce effective relative area of upper/lower electrode by lateral displacement between making waveguide up and down.
Further, upper and lower single-layer graphene utilizes the technologies such as ion beam etching, removes semiconductor waveguide and metal wave
Lead the graphene of side in the respectively left and right sides, that is to say, that the second single-layer graphene and the first single-layer graphene of reservation point
Not Wei Yu the dielectric layer both sides.It is required that upper/lower electrode by single-layer graphene, is connected with side waveguide above and below dielectric layer respectively.
After upper/lower electrode is drawn by photoetching, it can be connected with conducting wires such as enameled wires by way of similar point silver paste, be applied in electricity
.
In the present invention, CVD may be used in single-layer graphene or prepared by the mode of mechanical stripping, and needs mono-layer graphite
Alkene is placed on the interface of dielectric layer and waveguide.If placing single-layer graphene at upper and lower interface, upper layer and lower layer graphene needs
Only to retain side, other side removal by the method for ion beam etching, in the case where ensureing to be covered each by respective waveguide.
On the one hand the single-layer graphene up and down remained serves as modulation absorbed layer, on the other hand serve as a part for electrode.
In the present invention, the dielectric layer can be prepared by technologies such as thermal evaporation, magnetron sputtering and atomic layer depositions, needle
To these coating process, the dielectric layer material that can be selected includes mainly aluminium oxide, silica, titanium oxide, zirconium dioxide and five
Aoxidize the materials such as Tritanium/Trititanium.The dielectric layer of preparation wants fully to completely cut off active electrode up and down, and refractive index is big as possible, and not
It is easily breakdown.When using metal semiconductor mixed structure, the requirement according to photoelectricity integrated system to device-structure dimensions, setting
The silver-colored wide 150nm of waveguide, thick 100nm, semiconductor waveguide uses width 500nm, when the cadmium selenide of thick 150nm, to the thickness of aluminium oxide
Scanning emulation experiment is carried out, the results showed that the thickness of corresponding dielectric layer can select the range of 10nm to 100nm.If adopted
With upper and lower metal waveguide structure, it is set as 150nm wide in silver-colored waveguide, after 100nm thickness, the thickness of dielectric layer may be selected in 10 and arrive
Between 300nm.The optional thickness of dielectric layer changes with the width and thickness of upper and lower waveguide, difference.
The present invention takes full advantage of the strong Local Characteristic of SPP, among single-layer graphene is placed in SPP mould fields, improves graphite
Modulation effect of the alkene to light field.Metal waveguide and semiconductor waveguide serve as speculum in the interface with dielectric layer, by leakage
SPP wave reflections are returned, and by this operating mode, light field is by the significantly more efficient modulation of graphene, so that entire modulator
Modulation depth is greatly improved.Simultaneously because the structure design that upper/lower electrode is staggered is used, effective phase of upper/lower electrode
To area very little, several square microns can be reached, this allows for the integral capacitor very little of device.
Description of the drawings
Fig. 1 a are the stereogram of the modulator structure in embodiment 1；
Fig. 1 b are the side view of the modulator structure in embodiment 1；
Fig. 2 a are the stereogram of the modulator structure in embodiment 2；
Fig. 2 b are the side view of the modulator structure in embodiment 2；
Fig. 3 a are the stereogram of the modulator structure in embodiment 3；
Fig. 3 b are the side view of the modulator structure in embodiment 3；
Fig. 4 is the modulation depth FoM of embodiment 1And TE%
With the change curve of alumina medium layer thickness.
Fig. 5 is the modulation depth FoM and TE% of embodiment 3 with the change curve of alumina medium layer thickness.
Fig. 6 is the Electric Field Simulation design sketch of device.
Specific implementation mode
A kind of SPP electric absorption optical modulator includes successively from bottom to top：Silicon-based substrate, semiconductor square micro-nano waveguide or
The rectangular micro-nano waveguide of metal waveguide, single-layer graphene, media coating, single-layer graphene, metal and for applying modulation voltage
Upper/lower electrode.Its preparation process is as follows：Silicon chip with certain oxidated layer thickness is subjected to cutting cleaning, later in nitrogen environment
Lower drying, is then operated by micro-nano, will be transferred to lining by the semiconductor waveguide or metal waveguide of CVD or other modes preparation
On bottom, one piece of single-layer graphene is shifted later and is covered, and utilizes ion beam etching technology by the extra single layer stone in side
Black alkene etches away, and then passes through the standby lower electrode being connected with lower layer graphene of optical graving.Then, it is splashed using thermal evaporation or magnetic control
It the means such as penetrates, plates a layer dielectric, film thickness can control between 20nm-150nm.One piece of list is also shifted in the upside of dielectric layer
Layer graphene, again by optical graving for top electrode.Finally, metal waveguide needed for placing or prepare on upper layer graphene,
And extra single-layer graphene is etched away using ion beam etching means.The position of upper and lower waveguide can be by making on substrate
It marks and is determined.
Embodiment 1：
The electric absorption optical modulator of structure as illustrated in figs. 1A and ib, including：Silicon-based substrate 1, silicon oxide layer 2, semiconductor
Nanobelt waveguide 3, single-layer graphene 4, lower electrode 5, alumina medium layer 6, single-layer graphene 7, electrode 8 and metallic silver waveguide 9.
Wherein, semiconductor nano-strip waveguide 3 is placed in the silicon-based substrate 1 with certain thickness silicon oxide layer 2.By a single layer stone
Black alkene 4 is transferred in semiconductor nano-strip waveguide 3, by ion beam etching technology, removes the graphene of side.Later in graphite
On alkene layer, optical graving is for lower electrode 5.Then, using technologies such as thermal evaporation or magnetron sputterings, it is thick to plate one layer of 10nm to 100nm
Lower electrode cannot be completely covered for the alumina medium layer 6 of degree, plated dielectric layer.After the completion of plated film, shifted on dielectric layer another
One single-layer graphene 7, and by way of making marks on substrate, metallic silver waveguide 9 is placed on single-layer graphene 7 accordingly
Position remove the single-layer graphene of the extra side of desilver waveguide, and the one of reservation also with the method for ion beam etching
Side, optical graving is for electrode 8.
Embodiment 2：
The electric absorption optical modulator of structure as shown in Figure 2 a and 2 b, including：Silicon-based substrate 21, is partly led at silicon oxide layer 22
Body nanobelt waveguide 23, lower electrode 24, alumina medium layer 25, single-layer graphene 26, electrode 27 and metallic silver waveguide 28.
Compared with Example 1, in order to reduce the requirement of manufacture craft, lower layer graphene is no longer placed, lower electrode 24 passes through
The mode of photoetching is directly connected with downside semiconductor nano-strip waveguide 23.Meanwhile this kind of structure can no longer use ion beam etching
Technology performs etching processing to upside single-layer graphene 26.
Embodiment 3：
The electric absorption optical modulator of structure as shown in Figure 3a and Figure 3b shows, including：Silicon-based substrate 31, silicon oxide layer 32, metal
Waveguide 33, single-layer graphene 34, lower electrode 35, alumina medium layer 36, single-layer graphene 37, electrode 38 and metal waveguide 39.
Compared with Example 1, upper and lower waveguide all uses metal.The design of this structure is can be produced at upper and lower interface
Raw SPP waves, while metal serves as speculum in interface, reflecting effect is more preferable, but the non-modulation absorption loss of metal can be more
Greatly.Metal waveguide 33 is placed on the silicon-based substrate 31 of 32 thickness of certain oxide layer, and single-layer graphene 34 passes through transfer
It is placed on metal waveguide, by means such as ion beam etchings, removes the graphene of extra side.Plated film work is used later
Skill prepares alumina layer 36 of the thickness between 10nm to 300nm.Then one piece of single-layer graphene 37 is shifted, and is placed on it
Metal waveguide 39.The single-layer graphene of upside, will in the case where ensureing that upside metal waveguide lower surface can be completely covered
Extra side partial etching falls.
By taking the device in embodiment 1 as an example, Fig. 4 is the modulation FoM and TE% of device with the change of alumina medium layer thickness
Change curve.It is 700nm to emulate corresponding wavelength, and it is silver-colored waveguide that semiconductor waveguide, which uses CdSe nanobelts, metal waveguide,.It can see
Although going out the proportion TE% in total light field of the parallel component in light field drops to very low level, the modulation depth of this kind of structure
FoM can still reach high level.
By taking the device of embodiment 3 as an example, Fig. 5 is modulation FOM and TE% corresponding to the device with alumina medium thickness
The change curve of degree, it is 700nm to emulate corresponding wavelength, and metal waveguide is all made of silver-colored waveguide.It can be found that under this kind of situation,
The modulation depth FoM of device can maintain a relatively high level, the parallel component 65% or so, while in light field
Proportion TE% is maintained at a metastable level in total light field, declines very slow.
By taking embodiment 1-3 as an example, Fig. 6 is the electrical simulation result corresponding to device.The width of waveguide above and below setting
150nm, high 100nm；After thickness of dielectric layers is 60nm, electrical simulation carried out to the structure, emulation the results show that at this time
Capacitance be 1.4x10-14F.Related simultaneously test shows the resistance value of whole system at this time in 600 Europe or so, corresponding
Corresponding frequencies can reach 50GHz.
The foregoing is merely the preferable implementation examples of the present invention, are not intended to restrict the invention, it is all in spirit of that invention and
Within principle, any modification, equivalent replacement, improvement and so on should all be included in the protection scope of the present invention.
Claims (7)
1. a kind of surface plasmons electric absorption optical modulator based on graphene, which is characterized in that including：
Substrate, the first micro-nano waveguide and the second micro-nano waveguide stacked on substrate are located at the first micro-nano waveguide and the second micro-nano
Dielectric layer between waveguide and the first single-layer graphene, and connect respectively with first micro-nano waveguide and the second micro-nano waveguide
And to apply the first electrode and second electrode of modulation voltage；
At least one of described first micro-nano waveguide and the second micro-nano waveguide are metal waveguide；
First single-layer graphene is located in one of between metal waveguide and dielectric layer；
And one of electrode is connected by first single-layer graphene with corresponding metal waveguide.
2. surface plasmons electric absorption optical modulator as described in claim 1, which is characterized in that the substrate is upper
Surface has the silicon-based substrate of silicon oxide layer.
3. surface plasmons electric absorption optical modulator as described in claim 1, which is characterized in that first micro-nano
Waveguide is semiconductor waveguide or metal waveguide, and second micro-nano waveguide is metal waveguide.
4. the surface plasmons electric absorption optical modulator as described in claim 1 or 3, which is characterized in that the metal wave
Lead between 50nm to 300nm.
5. surface plasmons electric absorption optical modulator as described in claim 1, which is characterized in that under the dielectric layer
Interface is equipped with the second single-layer graphene, and the second single-layer graphene is connected with the first electrode, the first single-layer graphene and
The second electrode is connected.
6. surface plasmons electric absorption optical modulator as claimed in claim 5, which is characterized in that second single layer
Graphene and the first single-layer graphene are located at the both sides of the dielectric layer.
7. surface plasmons electric absorption optical modulator as described in claim 1, which is characterized in that the dielectric layer
Material is aluminium oxide or silica.
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|---|---|---|---|---|
| CN106200017A (en) * | 2016-08-25 | 2016-12-07 | 东南大学 | A kind of ultra-compact graphene electro-optical modulator based on super thin metal nanoparticle |
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