CN105699410B - A kind of lossless localization method of GOI failpoints and GOI failure analysis methods - Google Patents
A kind of lossless localization method of GOI failpoints and GOI failure analysis methods Download PDFInfo
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- CN105699410B CN105699410B CN201610058397.9A CN201610058397A CN105699410B CN 105699410 B CN105699410 B CN 105699410B CN 201610058397 A CN201610058397 A CN 201610058397A CN 105699410 B CN105699410 B CN 105699410B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
- G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/60—Specific applications or type of materials
- G01N2223/611—Specific applications or type of materials patterned objects; electronic devices
- G01N2223/6116—Specific applications or type of materials patterned objects; electronic devices semiconductor wafer
Abstract
The present invention relates to a kind of lossless localization method of GOI failpoints and GOI failure analysis methods, including step 1, remove the metal interconnecting layer of sample to be analysed, obtain with exposed salicide layers of pretreatment sample to be analysed；Step 2, based on PVC methods, whether using the salicide layers of the electron beam irradiation pretreatment sample to be analysed, and it is shinny to observe it；It is that then the sample to be analysed performs step 3 there are GOI failpoints；No, then GOI failpoints, end operation is not present in the sample to be analysed；Step 3, shinny salicide layers cut into the region of multiple relative separations when electron beam is irradiated；Step 4, PVC methods are again based on, the region is irradiated using electron beam, and finds out salicide layers shinny in the region；Step 5, Xun Huan performs step 3 and step 4, until when the size of salicide layers shinny during electron beam irradiation cannot be cut, end operation.The present invention realizes the high accuracy positioning of GOI failpoints, and entire position fixing process will not cause the further destruction of GOI failpoints.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, the lossless localization method of more particularly to a kind of GOI failpoints and GOI lose
Imitate analysis method.
Background technology
GOI tests are that the resistance to pressure of gate oxide in MOS device is tested, if GOI test failures, need to carry out GOI
Failure analysis, the reason for so as to find out GOI test failures.Traditional GOI failure analysis main flows are：It is obtained by analysis of central issue
The optics picture of sample to be analysed GOI failpoints is taken, this optics picture and the electron microscope picture of sample to be analysed are carried out
Comparison, positions GOI failpoints, then prepares TEM sample using FIB, carries out tem observation and elemental analysis obtains GOI and loses
The ingredient of effect point exotic matter.But the GOI failure point locations based on analysis of central issue will cause further breaking for GOI failpoints
It is bad, and positioning accuracy can only achieve 3-5um, make the later stage time-consuming using FIB preparations TEM sample.
The content of the invention
It is an object of the present invention to provide a kind of lossless localization method of GOI failpoints and GOI failure analysis methods, solve existing skill
The above problem present in art.
The technical solution that the present invention solves above-mentioned technical problem is as follows：
A kind of lossless localization method of GOI failpoints, includes the following steps：
Step 1, the metal interconnecting layer of sample to be analysed is removed, is obtained to be analyzed with exposed salicide layers of pretreatment
Sample；
Step 2, based on PVC methods, using the salicide layers of the electron beam irradiation pretreatment sample to be analysed, and observe
Whether it is shinny；It is that then the sample to be analysed performs step 3 there are GOI failpoints；No, then the sample to be analysed is not deposited
In GOI failpoints, end operation；
Step 3, shinny salicide layers cut into the region of multiple relative separations when electron beam is irradiated；
Step 4, PVC methods are again based on, the region is irradiated using electron beam, and is found out shinny in the region
Salicide layers；
Step 5, Xun Huan performs step 3 and step 4, until the size of salicide layers shinny during electron beam irradiation cannot
When being cut, end operation.
The beneficial effects of the invention are as follows：If there are GOI failpoints, the exotic matters of GOI failpoints for sample to be analysed
The salicide layers for being analysed to sample are turned on substrate, and the salicide layers of pretreatment sample to be analysed are irradiated using electron beam
When, based on PVC methods, salicide layers are in low potential due to being turned on substrate, under electron beam irradiation, the secondary electricity of effusion
Son is more, then it can be shinny；Shinny salicide layers cut into the region of multiple relative separations when electron beam is irradiated, each
Region will be no longer turned on, and when irradiating each area using electron beam again, only lower section can there are the region of GOI failpoints
It is turned on substrate and generates low potential and shinny, so that the location of GOI failpoints scope be further reduced；Repeatedly by electronics
Beam salicide layers shinny when irradiating cut into the region of multiple relative separations, make the location of GOI failpoints scope more
Secondary diminution, until the size of salicide layers shinny during electron beam irradiation terminates to cut when cannot be cut；The present invention makes
The positioning accuracy of GOI failpoints matches with cutting accuracy, realizes the high accuracy positioning of GOI failpoints, makes GOI failure analysis sides
TEM sample in method makes duration and reduces, and the TEM sample convenient for making pinpoint accuracy, such as 3D TEM samples；It is and entirely fixed
Position process will not cause the further destruction of GOI failpoints, improve the accuracy rate and success rate of GOI failure analyses.
Based on the above technical solutions, the present invention can also be improved as follows.
Further, the metal interconnecting layer of the removal sample to be analysed is using mechanical lapping and/or the method for chemical etching.
Further, the step 3 in the specific implementation, salicide layers shinny when electron beam is irradiated cut into it is multiple
The region of the decile of relative separation.
Advantageous effect using above-mentioned further scheme is to facilitate cutting, and convenient for improving the positioning of GOI failpoints effect
Rate.
Further, the cutting is carried out using the EE patterns in FIB cuttings.
Advantageous effect using above-mentioned further scheme is cutting accuracy to be improved, so as to improve the positioning accurate of GOI failpoints
Degree, positioning accuracy can reach 2-3um or even 500nm.
Further, the width of the cutting line of the cutting is 30-100nm, depth 50-500nm.
Advantageous effect using above-mentioned further scheme is to can effectively ensure that salicide layers of each area divides completely
From being no longer turned on, and GOX layers and substrate layer will not be damaged to.
Further, the electron beam that the electron beam is provided by SEM microscopes.
Advantageous effect using above-mentioned further scheme is destruction of the electron beam that SEM microscopes are provided to irradiation object
Property it is not strong, easy damaged pretreatment sample to be analysed salicide layers, be suitble to for a long time observation.
Further, the electron beam that the electron beam is provided by FIB microscopes.
Advantageous effect using above-mentioned further scheme is to be combined with FIB cuttings, make pretreatment sample to be analysed
Salicide layers of electron beam irradiation and cutting can perform on FIB boards, be conveniently operated, improve the positioning of GOI failpoints
Efficiency and positioning accuracy.
Another technical solution of the present invention is as follows：
A kind of GOI failure analysis methods carry out GOI failpoints using a kind of above-mentioned lossless localization method of GOI failpoints
Positioning.
Description of the drawings
Fig. 1 is a kind of method flow diagram of the lossless localization method of GOI failpoints of the present invention.
Specific embodiment
The principle and features of the present invention will be described below with reference to the accompanying drawings, and the given examples are served only to explain the present invention, and
It is non-to be used to limit the scope of the present invention.
As shown in Figure 1, a kind of lossless localization method of GOI failpoints, includes the following steps：
Step 1, the metal interconnecting layer of sample to be analysed is removed, is obtained to be analyzed with exposed salicide layers of pretreatment
Sample；The metal interconnecting layer of the removal sample to be analysed is using mechanical lapping and/or the method for chemical etching.
Step 2, based on PVC methods, using the salicide layers of the electron beam irradiation pretreatment sample to be analysed, and observe
Whether it is shinny；It is that then the sample to be analysed performs step 3 there are GOI failpoints；No, then the sample to be analysed is not deposited
In GOI failpoints, end operation.
Step 3, shinny salicide layers cut into the region of multiple relative separations when electron beam is irradiated.
The step 3 in the specific implementation, salicide layers shinny when electron beam is irradiated cut into multiple opposite points
From decile region.
The cutting is carried out using the EE patterns in FIB cuttings.
The width of the cutting line of the cutting is 30-100nm, depth 50-500nm.
Step 4, PVC methods are again based on, the region is irradiated using electron beam, and is found out shinny in the region
Salicide layers；
Step 5, Xun Huan performs step 3 and step 4, until the size of salicide layers shinny during electron beam irradiation cannot
When being cut, end operation.
The electron beam that SEM microscopes are provided may be employed in the electron beam, and passes through the micro- sem observation salicide of SEM
Whether layer is shinny；The electron beam that be there is provided of FIB microscopes can also be provided, and pass through micro- sem observation salicide layers of FIB to be
It is no shinny.
A kind of GOI failure analysis methods carry out GOI failpoints using a kind of above-mentioned lossless localization method of GOI failpoints
Positioning.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all the present invention spirit and
Within principle, any modifications, equivalent replacements and improvements are made should all be included in the protection scope of the present invention.
Claims (8)
1. a kind of lossless localization method of GOI failpoints, which is characterized in that include the following steps：
Step 1, the metal interconnecting layer of sample to be analysed is removed, is obtained with exposed salicide layers of pretreatment sample to be analyzed
Product；
Step 2, based on PVC methods, the salicide layers of sample to be analysed is pre-processed using electron beam irradiation is described, and observe it to be
It is no shinny；It is that then the sample to be analysed performs step 3 there are GOI failpoints；No, then the sample to be analysed is not present
GOI failpoints, end operation；
Step 3, shinny salicide layers cut into the region of multiple relative separations when electron beam is irradiated；
Step 4, PVC methods are again based on, the region is irradiated using electron beam, and finds out salicide shinny in the region
Layer；
Step 5, Xun Huan performs step 3 and step 4, until the size of salicide layers shinny during electron beam irradiation cannot carry out
During cutting, end operation.
A kind of 2. lossless localization method of GOI failpoints according to claim 1, which is characterized in that the removal sample to be analyzed
The metal interconnecting layer of product is using mechanical lapping and/or the method for chemical etching.
A kind of 3. lossless localization method of GOI failpoints according to claim 1, which is characterized in that the specific reality of the step 3
In existing, shinny salicide layers cut into the region of the decile of multiple relative separations when electron beam is irradiated.
4. a kind of lossless localization method of GOI failpoints according to claim 1, which is characterized in that the cutting is cut using FIB
EE patterns in cutting carry out.
A kind of 5. lossless localization method of GOI failpoints according to claim 1, which is characterized in that the cutting line of the cutting
Width be 30-100nm, depth 50-500nm.
6. according to a kind of any one of claim 1 to 5 lossless localization method of GOI failpoints, which is characterized in that the electronics
The electron beam that beam is provided by SEM microscopes.
7. according to a kind of any one of claim 1 to 5 lossless localization method of GOI failpoints, which is characterized in that the electronics
The electron beam that beam is provided by FIB microscopes.
8. a kind of GOI failure analysis methods, which is characterized in that using a kind of any GOI failpoints of claim 1 to 7 without
Damage localization method positions GOI failpoints.
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| CN107991599B (en) * | 2017-11-24 | 2020-04-14 | 长江存储科技有限责任公司 | Method for accurately positioning leakage point of interdigital gate GOI structure |
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| KR20020045885A (en) * | 2000-12-11 | 2002-06-20 | 박종섭 | A transistor and method for manufacturing the same |
| CN103913358A (en) * | 2014-04-10 | 2014-07-09 | 武汉新芯集成电路制造有限公司 | Preparation method and failure analysis method for transmission electron microscope (TEM) sample |
| CN103926264A (en) * | 2014-03-04 | 2014-07-16 | 武汉新芯集成电路制造有限公司 | Gate oxide failure point positioning method |
| CN104078343A (en) * | 2014-07-02 | 2014-10-01 | 武汉新芯集成电路制造有限公司 | Failure analysis method for gate oxide defect original appearance |
| CN104344981A (en) * | 2013-08-05 | 2015-02-11 | 中芯国际集成电路制造(上海)有限公司 | Preparation method of TEM sample |
| CN104376878A (en) * | 2014-09-15 | 2015-02-25 | 武汉新芯集成电路制造有限公司 | Semiconductor device failure analysis method |
| CN105097583A (en) * | 2014-05-09 | 2015-11-25 | 中芯国际集成电路制造(北京)有限公司 | Semiconductor structure failure analysis method |
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2016
- 2016-01-28 CN CN201610058397.9A patent/CN105699410B/en active Active
Patent Citations (7)
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|---|---|---|---|---|
| KR20020045885A (en) * | 2000-12-11 | 2002-06-20 | 박종섭 | A transistor and method for manufacturing the same |
| CN104344981A (en) * | 2013-08-05 | 2015-02-11 | 中芯国际集成电路制造(上海)有限公司 | Preparation method of TEM sample |
| CN103926264A (en) * | 2014-03-04 | 2014-07-16 | 武汉新芯集成电路制造有限公司 | Gate oxide failure point positioning method |
| CN103913358A (en) * | 2014-04-10 | 2014-07-09 | 武汉新芯集成电路制造有限公司 | Preparation method and failure analysis method for transmission electron microscope (TEM) sample |
| CN105097583A (en) * | 2014-05-09 | 2015-11-25 | 中芯国际集成电路制造(北京)有限公司 | Semiconductor structure failure analysis method |
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