CN105694307A - Polyvinylidene fluoride nano-film material and preparation method thereof - Google Patents
Polyvinylidene fluoride nano-film material and preparation method thereof Download PDFInfo
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- CN105694307A CN105694307A CN201610139455.0A CN201610139455A CN105694307A CN 105694307 A CN105694307 A CN 105694307A CN 201610139455 A CN201610139455 A CN 201610139455A CN 105694307 A CN105694307 A CN 105694307A
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- 239000000463 material Substances 0.000 title claims abstract description 46
- 239000002033 PVDF binder Substances 0.000 title claims abstract description 44
- 229920002981 polyvinylidene fluoride Polymers 0.000 title claims abstract description 44
- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 239000002120 nanofilm Substances 0.000 title abstract 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 98
- 239000011787 zinc oxide Substances 0.000 claims abstract description 49
- 239000000203 mixture Substances 0.000 claims abstract description 35
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 claims abstract description 27
- 229910052810 boron oxide Inorganic materials 0.000 claims abstract description 25
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910000464 lead oxide Inorganic materials 0.000 claims abstract description 25
- FUJCRWPEOMXPAD-UHFFFAOYSA-N lithium oxide Chemical compound [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910001947 lithium oxide Inorganic materials 0.000 claims abstract description 25
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 claims abstract description 25
- LAJZODKXOMJMPK-UHFFFAOYSA-N tellurium dioxide Chemical compound O=[Te]=O LAJZODKXOMJMPK-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229920002239 polyacrylonitrile Polymers 0.000 claims abstract description 23
- 239000002994 raw material Substances 0.000 claims abstract description 13
- 239000010409 thin film Substances 0.000 claims description 37
- 238000000137 annealing Methods 0.000 claims description 36
- CSSYLTMKCUORDA-UHFFFAOYSA-N barium(2+);oxygen(2-) Chemical compound [O-2].[Ba+2] CSSYLTMKCUORDA-UHFFFAOYSA-N 0.000 claims description 23
- 239000002253 acid Substances 0.000 claims description 21
- 238000010438 heat treatment Methods 0.000 claims description 18
- 238000003756 stirring Methods 0.000 claims description 10
- 238000010792 warming Methods 0.000 claims description 10
- 238000009864 tensile test Methods 0.000 claims description 8
- 238000005260 corrosion Methods 0.000 abstract description 3
- 230000007797 corrosion Effects 0.000 abstract description 3
- 229920001467 poly(styrenesulfonates) Polymers 0.000 abstract 2
- 229960002796 polystyrene sulfonate Drugs 0.000 abstract 2
- 239000011970 polystyrene sulfonate Substances 0.000 abstract 2
- 239000010408 film Substances 0.000 description 6
- 238000010998 test method Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 2
- 230000004224 protection Effects 0.000 description 2
- 101710172072 Kexin Proteins 0.000 description 1
- 230000006750 UV protection Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L27/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers
- C08L27/02—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers not modified by chemical after-treatment
- C08L27/12—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers not modified by chemical after-treatment containing fluorine atoms
- C08L27/16—Homopolymers or copolymers or vinylidene fluoride
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/049—Protective back sheets
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2203/00—Applications
- C08L2203/16—Applications used for films
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2203/00—Applications
- C08L2203/20—Applications use in electrical or conductive gadgets
- C08L2203/204—Applications use in electrical or conductive gadgets use in solar cells
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2205/00—Polymer mixtures characterised by other features
- C08L2205/03—Polymer mixtures characterised by other features containing three or more polymers in a blend
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention discloses a polyvinylidene fluoride nano-film material and a preparation method thereof. The polyvinylidene fluoride nano-film material is prepared from raw materials in parts by weight as follows: 20-70 parts of polyvinylidene fluoride, 1-5 parts of lithium oxide, 5-25 parts of polystyrene sulfonate, 1-8 parts of zinc oxide, 3-18 parts of polyacrylonitrile, 1-18 parts of boron oxide, 1-7 parts of tellurium dioxide, 1-15 parts of zinc oxide, 1-8 parts of lead oxide and 1-8 parts of barium oxide. Polyvinylidene fluoride, polystyrene sulfonate and polyacrylonitrile are exposed to ultraviolet light, and a mixture A is obtained; lithium oxide, zinc oxide, boron oxide, tellurium dioxide, lead oxide and barium oxide are treated at the high temperature, the mixture A is added, the mixture is continuously heated, kept at the temperature, annealed and drawn, and the polyvinylidene fluoride nano-film material is obtained. The polyvinylidene fluoride nano-film material has the advantages of good mechanical performance, good corrosion resistance, high peel strength, excellent conductivity and good malleability, the preparation method is simple and easy to operate, the conditions are controllable, and the repeatability is high.
Description
Technical field
The present invention relates to solar battery back film field of material technology, specifically a kind of polyvinylidene fluoride nanometer thin-film material and preparation method thereof。
Background technology
The use of non-renewable energy resources, often along with the pollution of ecological environment, is also mankind's difficult problems of having to go solving。Environment is not had any nonstaining property as a kind of green energy resource by solar energy, and its source is simple, it may be said that be that it is inexhaustible in the existence time limit of the mankind。Solar energy is not only the disposable energy or clean energy resource, its aboundresources, ubiquity, without transporting, also can freely use, the most important thing is environment is not had any pollution。Nowadays the solar energy used have greatly by solar cell conversion get。The coating process of present solar battery back film is to make the EVA by binding agent rank under hot pressing condition, TPT (the trilamellar membrane structure of PVF and PET) be bonded on solar panel, and then plays the effect of protection inside battery。The solar battery back film TPT of own commercialization occurs in that peeling, and to trace it to its cause be caused by the cementitiousness difference of TPT film surface。A kind of both there is good chemical resistance, ultraviolet resistance line so to develop, there is good mechanical property, also want can be intact with base material the new solar battery back film being bonded together。
Summary of the invention
It is an object of the invention to provide a kind of good mechanical properties, the polyvinylidene fluoride nanometer thin-film material that corrosion-resistant, peel strength is high, electric conductivity is superior, ductility is good and preparation method thereof, with the problem solving to propose in above-mentioned background technology。
For achieving the above object, the present invention provides following technical scheme:
A kind of polyvinylidene fluoride nanometer thin-film material, includes according to the raw material of weight portion: Kynoar 20-70 part, lithium oxide 1-5 part, polystyrolsulfon acid 5-25 part, zinc oxide 1-8 part, polyacrylonitrile 3-18 part, boron oxide 1-18 part, tellurium dioxide 1-7 part, zinc oxide 1-15 part, lead oxide 1-8 part, Barium monoxide 1-8 part。
As the further scheme of the present invention: described polyvinylidene fluoride nanometer thin-film material, include according to the raw material of weight portion: Kynoar 30-60 part, lithium oxide 1-3 part, polystyrolsulfon acid 10-20 part, zinc oxide 2-6 part, polyacrylonitrile 5-15 part, boron oxide 2-15 part, tellurium dioxide 1-5 part, zinc oxide 1-10 part, lead oxide 2-5 part, Barium monoxide 1-5 part。
As the further scheme of the present invention: described polyvinylidene fluoride nanometer thin-film material, include according to the raw material of weight portion: Kynoar 40-50 part, lithium oxide 2-3 part, polystyrolsulfon acid 12-18 part, zinc oxide 3-5 part, polyacrylonitrile 8-12 part, boron oxide 5-10 part, tellurium dioxide 2-4 part, zinc oxide 3-8 part, lead oxide 3-4 part, Barium monoxide 2-4 part。
The preparation method of described polyvinylidene fluoride nanometer thin-film material, comprises the steps:
1), being exposed under ultraviolet light by Kynoar, polystyrolsulfon acid and polyacrylonitrile, uv power is 500-1000W, and open-assembly time is 3-10h, obtains mixture A；
2), lithium oxide, zinc oxide, boron oxide, tellurium dioxide, zinc oxide, lead oxide and Barium monoxide are warming up to 1200-1400 DEG C with the heating rate of 10-20 DEG C/min, stir to mix homogeneously, it is cooled to 500-700 DEG C with the rate of temperature fall of 3-5 DEG C/min, add mixture A again, being continuously heating to 900-1000 DEG C, be incubated 10-50min, annealing prepares mixture B, wherein annealing temperature is 600-700 DEG C, and annealing time is 30-80min；
3), by step 2) the mixture B that makes annealing treatment stretches with the draw speed of 1-5mm/min on mechanical type tensile testing machine and prepares polyvinylidene fluoride nanometer thin-film material。
As the further scheme of the present invention: step 1) medium ultraviolet luminous power is 600-900W, open-assembly time is 5-8h。
As the further scheme of the present invention: step 2) in lithium oxide, zinc oxide, boron oxide, tellurium dioxide, zinc oxide, lead oxide and Barium monoxide are warming up to 1200-1300 DEG C with the heating rate of 12-18 DEG C/min, stirring, to mix homogeneously, is cooled to 600-700 DEG C with the rate of temperature fall of 3-5 DEG C/min。
As the further scheme of the present invention: step 2) in annealing temperature be 600-700 DEG C, annealing time is 50-60min。
As the further scheme of the present invention: step 3) in draw speed be 2-4mm/min。
Compared with prior art, the invention has the beneficial effects as follows:
The present invention is with Kynoar for material of main part, polystyrolsulfon acid is utilized with polyacrylonitrile, it to be modifiied, creationary addition lithium oxide, zinc oxide, boron oxide, tellurium dioxide, zinc oxide, lead oxide and Barium monoxide, the advantage that polyvinylidene fluoride nanometer thin-film material has good mechanical properties, corrosion-resistant, peel strength is high, electric conductivity is superior, ductility is good prepared, preparation method is simple to operation, condition is controlled, and repeatability is high。
Detailed description of the invention
Below in conjunction with the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described embodiment is only a part of embodiment of the present invention, rather than whole embodiments。Based on the embodiment in the present invention, the every other embodiment that those of ordinary skill in the art obtain under not making creative work premise, broadly fall into the scope of protection of the invention。
Embodiment 1
In the embodiment of the present invention, a kind of polyvinylidene fluoride nanometer thin-film material, includes according to the raw material of weight portion: Kynoar 20 parts, lithium oxide 1 part, polystyrolsulfon acid 5 parts, zinc oxide 1 part, polyacrylonitrile 3 parts, boron oxide 1 part, tellurium dioxide 1 part, zinc oxide 1 part, 1 part of lead oxide, Barium monoxide 1 part。
The preparation method of described polyvinylidene fluoride nanometer thin-film material, comprises the steps:
1), being exposed under ultraviolet light by Kynoar, polystyrolsulfon acid and polyacrylonitrile, uv power is 500W, and open-assembly time is 3h, obtains mixture A。
2), lithium oxide, zinc oxide, boron oxide, tellurium dioxide, zinc oxide, lead oxide and Barium monoxide are warming up to 1200 DEG C with the heating rate of 10 DEG C/min, stir to mix homogeneously, it is cooled to 500 DEG C with the rate of temperature fall of 3 DEG C/min, add mixture A again, being continuously heating to 900 DEG C, be incubated 10min, annealing prepares mixture B, wherein annealing temperature is 600 DEG C, and annealing time is 30min。
3), by step 2) the mixture B that makes annealing treatment stretches with the draw speed of 1mm/min on mechanical type tensile testing machine and prepares polyvinylidene fluoride nanometer thin-film material。
Embodiment 2
In the embodiment of the present invention, a kind of polyvinylidene fluoride nanometer thin-film material, includes according to the raw material of weight portion: Kynoar 70 parts, lithium oxide 5 parts, polystyrolsulfon acid 25 parts, zinc oxide 8 parts, polyacrylonitrile 18 parts, boron oxide 18 parts, tellurium dioxide 7 parts, zinc oxide 15 parts, 8 parts of lead oxide, Barium monoxide 8 parts。
The preparation method of described polyvinylidene fluoride nanometer thin-film material, comprises the steps:
1), being exposed under ultraviolet light by Kynoar, polystyrolsulfon acid and polyacrylonitrile, uv power is 1000W, and open-assembly time is 10h, obtains mixture A。
2), lithium oxide, zinc oxide, boron oxide, tellurium dioxide, zinc oxide, lead oxide and Barium monoxide are warming up to 1400 DEG C with the heating rate of 20 DEG C/min, stir to mix homogeneously, it is cooled to 700 DEG C with the rate of temperature fall of 5 DEG C/min, add mixture A again, being continuously heating to 1000 DEG C, be incubated 50min, annealing prepares mixture B, wherein annealing temperature is 700 DEG C, and annealing time is 80min。
3), by step 2) the mixture B that makes annealing treatment stretches with the draw speed of 5mm/min on mechanical type tensile testing machine and prepares polyvinylidene fluoride nanometer thin-film material。
Embodiment 3
In the embodiment of the present invention, a kind of polyvinylidene fluoride nanometer thin-film material, includes according to the raw material of weight portion: Kynoar 30 parts, lithium oxide 1 part, polystyrolsulfon acid 10 parts, zinc oxide 2 parts, polyacrylonitrile 5 parts, boron oxide 2 parts, tellurium dioxide 1 part, zinc oxide 1 part, 2 parts of lead oxide, Barium monoxide 1 part。
The preparation method of described polyvinylidene fluoride nanometer thin-film material, comprises the steps:
1), being exposed under ultraviolet light by Kynoar, polystyrolsulfon acid and polyacrylonitrile, uv power is 600W, and open-assembly time is 5h, obtains mixture A。
2), lithium oxide, zinc oxide, boron oxide, tellurium dioxide, zinc oxide, lead oxide and Barium monoxide are warming up to 1200 DEG C with the heating rate of 12 DEG C/min, stir to mix homogeneously, it is cooled to 600 DEG C with the rate of temperature fall of 3 DEG C/min, add mixture A again, being continuously heating to 900 DEG C, be incubated 10min, annealing prepares mixture B, wherein annealing temperature is 600 DEG C, and annealing time is 50min。
3), by step 2) the mixture B that makes annealing treatment stretches with the draw speed of 2mm/min on mechanical type tensile testing machine and prepares polyvinylidene fluoride nanometer thin-film material。
Embodiment 4
In the embodiment of the present invention, a kind of polyvinylidene fluoride nanometer thin-film material, includes according to the raw material of weight portion: Kynoar 60 parts, lithium oxide 3 parts, polystyrolsulfon acid 20 parts, zinc oxide 6 parts, polyacrylonitrile 15 parts, boron oxide 15 parts, tellurium dioxide 5 parts, zinc oxide 10 parts, 5 parts of lead oxide, Barium monoxide 5 parts。
The preparation method of described polyvinylidene fluoride nanometer thin-film material, comprises the steps:
1), being exposed under ultraviolet light by Kynoar, polystyrolsulfon acid and polyacrylonitrile, uv power is 900W, and open-assembly time is 8h, obtains mixture A。
2), lithium oxide, zinc oxide, boron oxide, tellurium dioxide, zinc oxide, lead oxide and Barium monoxide are warming up to 1300 DEG C with the heating rate of 18 DEG C/min, stir to mix homogeneously, it is cooled to 700 DEG C with the rate of temperature fall of 5 DEG C/min, add mixture A again, being continuously heating to 1000 DEG C, be incubated 50min, annealing prepares mixture B, wherein annealing temperature is 700 DEG C, and annealing time is 60min。
3), by step 2) the mixture B that makes annealing treatment stretches with the draw speed of 4mm/min on mechanical type tensile testing machine and prepares polyvinylidene fluoride nanometer thin-film material。
Embodiment 5
In the embodiment of the present invention, a kind of polyvinylidene fluoride nanometer thin-film material, includes according to the raw material of weight portion: Kynoar 40 parts, lithium oxide 2 parts, polystyrolsulfon acid 12 parts, zinc oxide 3 parts, polyacrylonitrile 8 parts, boron oxide 5 parts, tellurium dioxide 2 parts, zinc oxide 3 parts, 3 parts of lead oxide, Barium monoxide 2 parts。
The preparation method of described polyvinylidene fluoride nanometer thin-film material, comprises the steps:
1), being exposed under ultraviolet light by Kynoar, polystyrolsulfon acid and polyacrylonitrile, uv power is 700W, and open-assembly time is 6h, obtains mixture A。
2), lithium oxide, zinc oxide, boron oxide, tellurium dioxide, zinc oxide, lead oxide and Barium monoxide are warming up to 1200 DEG C with the heating rate of 15 DEG C/min, stir to mix homogeneously, it is cooled to 600 DEG C with the rate of temperature fall of 5 DEG C/min, add mixture A again, being continuously heating to 900 DEG C, be incubated 20min, annealing prepares mixture B, wherein annealing temperature is 600 DEG C, and annealing time is 50min。
3), by step 2) the mixture B that makes annealing treatment stretches with the draw speed of 3mm/min on mechanical type tensile testing machine and prepares polyvinylidene fluoride nanometer thin-film material。
Embodiment 6
In the embodiment of the present invention, a kind of polyvinylidene fluoride nanometer thin-film material, includes according to the raw material of weight portion: Kynoar 50 parts, lithium oxide 3 parts, polystyrolsulfon acid 18 parts, zinc oxide 5 parts, polyacrylonitrile 12 parts, boron oxide 10 parts, tellurium dioxide 4 parts, zinc oxide 8 parts, 4 parts of lead oxide, Barium monoxide 4 parts。
The preparation method of described polyvinylidene fluoride nanometer thin-film material, comprises the steps:
1), being exposed under ultraviolet light by Kynoar, polystyrolsulfon acid and polyacrylonitrile, uv power is 800W, and open-assembly time is 7h, obtains mixture A。
2), lithium oxide, zinc oxide, boron oxide, tellurium dioxide, zinc oxide, lead oxide and Barium monoxide are warming up to 1300 DEG C with the heating rate of 14 DEG C/min, stir to mix homogeneously, it is cooled to 700 DEG C with the rate of temperature fall of 4 DEG C/min, add mixture A again, being continuously heating to 1000 DEG C, be incubated 40min, annealing prepares mixture B, wherein annealing temperature is 600 DEG C, and annealing time is 60min。
3), by step 2) the mixture B that makes annealing treatment stretches with the draw speed of 3mm/min on mechanical type tensile testing machine and prepares polyvinylidene fluoride nanometer thin-film material。
The polyvinylidene fluoride nanometer thin-film material that embodiment 1-6 is obtained is for preparing solar battery back film, and carries out performance test, and method of testing is:
Mechanics property analysis: model: wDW3020 micro-control electronic universal tester；Maximum test force: 20KN；Class of accuracy: 0.5%, Kexin Experimental Instrument Co., Ltd., Changchun City。Material membrane blade is cut into certain length and width, thick rectangle, adopts WDW3020 type electronic universal tester to carry out mechanical stretch, sets just test force value 0.5N, crossbeam speed 2mm/min。
Peel strength: method of testing is referring to ASTMD-1876；
Shelf depreciation: method of testing is referring to work EC60664-1；
Yellowness index: method of testing is referring to ASTME-313-05；Test result is in Table 1。
Table 1
| Hot strength/MPa | Extension at break degree/% | Peel strength/N/cm | Shelf depreciation/VDC | Yellowness index | |
| Embodiment 1 | 33.52 | 18.5 | 62.5 | 1500 | 1.8 |
| Embodiment 2 | 34.48 | 19.2 | 66.4 | 1500 | 1.7 |
| Embodiment 3 | 36.56 | 19.5 | 71.2 | 1700 | 1.5 |
| Embodiment 4 | 36.89 | 20.0 | 72.5 | 1700 | 1.4 |
| Embodiment 5 | 38.92 | 23.5 | 78.3 | 1900 | 1.2 |
| Embodiment 6 | 39.82 | 25.3 | 79.4 | 1900 | 1.0 |
It is obvious to a person skilled in the art that the invention is not restricted to the details of above-mentioned one exemplary embodiment, and when without departing substantially from the spirit of the present invention or basic feature, it is possible to realize the present invention in other specific forms。Therefore, no matter from which point, embodiment all should be regarded as exemplary, and be nonrestrictive, the scope of the invention rather than described above limits, it is intended that all changes in the implication of the equivalency dropping on claim and scope included in the present invention。
In addition, it is to be understood that, although this specification is been described by according to embodiment, but not each embodiment only comprises an independent technical scheme, this narrating mode of description is only for clarity sake, description should be made as a whole by those skilled in the art, and the technical scheme in each embodiment through appropriately combined, can also form other embodiments that it will be appreciated by those skilled in the art that。
Claims (8)
1. a polyvinylidene fluoride nanometer thin-film material, it is characterized in that, include according to the raw material of weight portion: Kynoar 20-70 part, lithium oxide 1-5 part, polystyrolsulfon acid 5-25 part, zinc oxide 1-8 part, polyacrylonitrile 3-18 part, boron oxide 1-18 part, tellurium dioxide 1-7 part, zinc oxide 1-15 part, lead oxide 1-8 part, Barium monoxide 1-8 part。
2. polyvinylidene fluoride nanometer thin-film material according to claim 1, it is characterized in that, include according to the raw material of weight portion: Kynoar 30-60 part, lithium oxide 1-3 part, polystyrolsulfon acid 10-20 part, zinc oxide 2-6 part, polyacrylonitrile 5-15 part, boron oxide 2-15 part, tellurium dioxide 1-5 part, zinc oxide 1-10 part, lead oxide 2-5 part, Barium monoxide 1-5 part。
3. polyvinylidene fluoride nanometer thin-film material according to claim 2, it is characterized in that, include according to the raw material of weight portion: Kynoar 40-50 part, lithium oxide 2-3 part, polystyrolsulfon acid 12-18 part, zinc oxide 3-5 part, polyacrylonitrile 8-12 part, boron oxide 5-10 part, tellurium dioxide 2-4 part, zinc oxide 3-8 part, lead oxide 3-4 part, Barium monoxide 2-4 part。
4. one kind as arbitrary in claim 1-3 as described in the preparation method of polyvinylidene fluoride nanometer thin-film material, it is characterised in that comprise the steps:
1), being exposed under ultraviolet light by Kynoar, polystyrolsulfon acid and polyacrylonitrile, uv power is 500-1000W, and open-assembly time is 3-10h, obtains mixture A；
2), lithium oxide, zinc oxide, boron oxide, tellurium dioxide, zinc oxide, lead oxide and Barium monoxide are warming up to 1200-1400 DEG C with the heating rate of 10-20 DEG C/min, stir to mix homogeneously, it is cooled to 500-700 DEG C with the rate of temperature fall of 3-5 DEG C/min, add mixture A again, being continuously heating to 900-1000 DEG C, be incubated 10-50min, annealing prepares mixture B, wherein annealing temperature is 600-700 DEG C, and annealing time is 30-80min；
3), by step 2) the mixture B that makes annealing treatment stretches with the draw speed of 1-5mm/min on mechanical type tensile testing machine and prepares polyvinylidene fluoride nanometer thin-film material。
5. the preparation method of polyvinylidene fluoride nanometer thin-film material according to claim 4, it is characterised in that step 1) medium ultraviolet luminous power is 600-900W, open-assembly time is 5-8h。
6. the preparation method of polyvinylidene fluoride nanometer thin-film material according to claim 4, it is characterized in that, step 2) in lithium oxide, zinc oxide, boron oxide, tellurium dioxide, zinc oxide, lead oxide and Barium monoxide are warming up to 1200-1300 DEG C with the heating rate of 12-18 DEG C/min, stirring, to mix homogeneously, is cooled to 600-700 DEG C with the rate of temperature fall of 3-5 DEG C/min。
7. the preparation method of polyvinylidene fluoride nanometer thin-film material according to claim 4, it is characterised in that step 2) in annealing temperature be 600-700 DEG C, annealing time is 50-60min。
8. the preparation method of polyvinylidene fluoride nanometer thin-film material according to claim 4, it is characterised in that step 3) in draw speed be 2-4mm/min。
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106279988A (en) * | 2016-08-16 | 2017-01-04 | 金田集团（桐城）塑业有限公司 | A kind of corrosion-resistant BOPP thin film |
| CN106280146A (en) * | 2016-08-04 | 2017-01-04 | 陈永林 | A kind of preparation method of high-performance porous zinc bloom polyvinylidene fluoride composite material |
| CN106380683A (en) * | 2016-08-31 | 2017-02-08 | 金田集团（桐城）塑业有限公司 | Slip polypropylene film |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102134359A (en) * | 2011-01-07 | 2011-07-27 | 东华大学 | Solar cell back film and preparation method thereof |
| CN102206387A (en) * | 2011-03-30 | 2011-10-05 | 东华大学 | High molecule and inorganic nano-particle hybrid film and preparation method thereof |
| CN103803802A (en) * | 2014-03-08 | 2014-05-21 | 曹小松 | Stone-imitating glass for making furniture |
| CN104327428A (en) * | 2014-11-13 | 2015-02-04 | 无锡中洁能源技术有限公司 | Nano-silicon modified polyvinylidene fluoride solar cell back film material and preparation method thereof |
-
2016
- 2016-03-11 CN CN201610139455.0A patent/CN105694307A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102134359A (en) * | 2011-01-07 | 2011-07-27 | 东华大学 | Solar cell back film and preparation method thereof |
| CN102206387A (en) * | 2011-03-30 | 2011-10-05 | 东华大学 | High molecule and inorganic nano-particle hybrid film and preparation method thereof |
| CN103803802A (en) * | 2014-03-08 | 2014-05-21 | 曹小松 | Stone-imitating glass for making furniture |
| CN104327428A (en) * | 2014-11-13 | 2015-02-04 | 无锡中洁能源技术有限公司 | Nano-silicon modified polyvinylidene fluoride solar cell back film material and preparation method thereof |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106280146A (en) * | 2016-08-04 | 2017-01-04 | 陈永林 | A kind of preparation method of high-performance porous zinc bloom polyvinylidene fluoride composite material |
| CN106280146B (en) * | 2016-08-04 | 2018-08-31 | 扬州振中锌业有限公司 | A kind of preparation method of high-performance porous zinc bloom-polyvinylidene fluoride composite material |
| CN106279988A (en) * | 2016-08-16 | 2017-01-04 | 金田集团（桐城）塑业有限公司 | A kind of corrosion-resistant BOPP thin film |
| CN106380683A (en) * | 2016-08-31 | 2017-02-08 | 金田集团（桐城）塑业有限公司 | Slip polypropylene film |
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Application publication date: 20160622 |