A kind of LED circuit of the single- stage PFC of double-transistor flyback
Technical field
The invention belongs to LED power technical field more particularly to a kind of LED circuits of the single- stage PFC of double-transistor flyback, specifically
It is applied to higher AC-input voltage, the LED power that higher PF and low THD are required.
Background technique
Existing LED power technical application or it is input voltage in 305V or less or is real by twin-stage pfc circuit
Existing high-line input voltage, from the cost of complete machine and the application type selecting of device, to the efficiency of complete machine, the power density etc. of product
All be a more traditional technology, cause complete machine it is at high cost and device using type selecting difference and to complete machine low efficiency.
Current two-tube single- stage PFC circuit can preferably solve the deficiencies in the prior art.
Summary of the invention
General, the easy type selecting of device that it is an object of the present invention to provide a kind of circuit structures is simple, device is pressure-resistant, device surplus foot,
Cooperate existing single- stage PFC circuit, realizes that a kind of LED power circuit of the low THD of high PFC realizes that product cost is low, product competition
Ability is strong.
In place of realizing object above and solving the deficiencies in the prior art, the present invention is able to by the following technical programs
It realizes.
To achieve the goals above, present invention employs following technical solutions:
A kind of LED circuit of the single- stage PFC of double-transistor flyback, including VCC power supply circuit, double-transistor flyback circuit, metal-oxide-semiconductor Q3 and
Chip IC 1, the double-transistor flyback circuit include transformer T2, diode D4, capacitor C8, diode D10 and capacitor C17, described
Transformer T2 include primary side N2 described in primary side N1 and two primary side N2 and primary side N3 be parallel with zener diode Z2 and
The output end of metal-oxide-semiconductor Q3, the metal-oxide-semiconductor Q3 and VCC power supply circuit is electrically connected, the diode D4 respectively with metal-oxide-semiconductor Q3 and
Capacitor C8 is in parallel, and the metal-oxide-semiconductor Q3 is connected by capacitor C18 with metal-oxide-semiconductor Q4, is parallel with pressure stabilizing two on the right side of the primary side N3
Pole pipe Z3, the zener diode Z3 and metal-oxide-semiconductor Q4 are in parallel, and the metal-oxide-semiconductor Q4 is in parallel with capacitor C17 and diode D10 respectively,
The capacitor C17 and diode D10 is in parallel, and the diode D4 is connect with the output end of capacitor C17, and the diode D4 and
Capacitor C17 is connected to the first primary side of transformer T1, and the capacitor C18 is also connected to the first primary side of transformer T1, institute
The primary side for stating transformer T1 is connected with diode DS7, diode DS6, capacitor CS11, resistance RS1 and resistance RS2, and described two
Pole pipe DS7 and diode DS6 are in parallel, and diode DS7 and diode DS6 are serially connected with resistance RS26 and resistance RS27 electricity in parallel
Road, the resistance RS26 and resistance RS27 parallel circuit and resistance RS1 and resistance RS2 parallel circuit in series, the metal-oxide-semiconductor Q3's
N-channel is connected to resistance R22 and resistance R6, and the foot of the chip IC 1 is output to totem circuit by resistance R17.
Preferably, resistance R23 is in series on the primary side N1.
Preferably, the totem circuit includes NPN type triode Q1 and PNP type triode Q2.
The present invention also provides a kind of guard method of the LED circuit of the single- stage PFC of double-transistor flyback, this method is double
The single- stage PFC circuit of pipe circuit of reversed excitation and PSR are combined together, and MOS is resistance to when can preferably handle the input of higher alternating voltage
Pressure problem, the pressure-resistant MOS of this application about 1KV or more, the MOS of the 650V or 700V that commonly use pressure resistance with two are used in series, can
Preferably to solve the problems, such as the high voltage of single MOS, while single high-pressure MOS compares relatively, and two low pressure MOSRDS are smaller, damage
Consumption is smaller, improves overall efficiency, specific work process is as follows:
S1, pwm signal amplify IC by the defeated totem formed to NPN type triode Q1 and PNP type triode Q2 of foot of IC1
Current drive capability, pwm signal through the defeated primary side N1 to transformer T2 of capacitor C2;
S2, transformer T2 primary side N1 be the input signal end of transformer T2, when primary side N1 has pwm signal, become
The two primary side N2 and primary side N3 of depressor T2 sense the pwm signal of corresponding phase according to Same Name of Ends principle simultaneously;
S3, when the primary side N1 of transformer T2 be PWM high level input when, the two primary side N2 and secondary of transformer T2
Side N3 understands just lower negative high level signal in induction simultaneously and is respectively added to metal-oxide-semiconductor Q3 and metal-oxide-semiconductor Q4Vgs according to Same Name of Ends principle;
Metal-oxide-semiconductor Q3 and metal-oxide-semiconductor Q4 are simultaneously turned on, and the inductive current of transformer will be linearly increasing and energy is stored in transformer;
S4, when the primary side N1 of transformer T2 be PWM low level input when, the two primary side N2 and secondary of transformer T2
Side N3 understands signal positive under bearing in induction simultaneously and is respectively added to metal-oxide-semiconductor Q3 and metal-oxide-semiconductor Q4Vgs, then metal-oxide-semiconductor according to Same Name of Ends principle
Energy is transferred to secondary side through output diode DS7 and diode DS6 by Q3 and metal-oxide-semiconductor Q4 cut-off transformer;Because of leakage inductance institute
The voltage of formation will lead to 2 recycling diode conductings, diode D4 and diode D10 conducting, and magnetic core excitation is resetted, in order to avoid
Magnetic saturation;
S5, transformer T2 pwm signal constantly export the pwm signal of low and high level, be exactly the continuous function for repeating S3 and S4
Can, in this way by the Push And Release of metal-oxide-semiconductor Q3 and metal-oxide-semiconductor Q4, the through and off of transformer are just energy from once defeated to secondary side;
The pwm signal of S6, S5 can export corresponding square wave, through core in the VCC pin T 1-5Pin of transformer T1 after being formed
Piece IC1ZCS is detected, into determining to identify, is realized at the lowest point and is opened and turn off, realize the function of PSR, form high PFC, low
THD。
A kind of LED circuit of the single- stage PFC of double-transistor flyback provided by the invention, compared with traditional LED circuit, the present invention
Using (two-tube) series connection of two MOS, preferable to solve because AC-input voltage is high, and causes MOS pressure resistance higher, type selecting is difficult,
The supply of material is difficult, and the puzzlement of goods hardly possible is adjusted to reduce cost because general MOS can be selected;Circuit of the invention is applied in single- stage PFC circuit
In, the LED application requirement of the low THD of high PF can be also solved, it is simple to reach circuit, and at low cost, power density is high;The present invention is because of electricity
Line structure is simple, and the resistance to nature RDS that forces down of MOS is small, and low, high-efficient, the saving energy, extension life of product, while cost is lost
It is low, it reduces costs, the MOS of a high voltage, the MOS of significantly larger than two low pressure.
Detailed description of the invention
Fig. 1 is the structural diagram of the present invention.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.
Fig. 1 is please referred to, present invention employs following technical solutions:
A kind of LED circuit of the single- stage PFC of double-transistor flyback, including VCC power supply circuit, double-transistor flyback circuit, metal-oxide-semiconductor Q3 and
Chip IC 1, the double-transistor flyback circuit include transformer T2, diode D4, capacitor C8, diode D10 and capacitor C17, described
Transformer T2 includes being in series with resistance R23 on primary side N1 and two primary side N2 and primary side N3, the primary side N1, described
Primary side N2 is parallel with zener diode Z2 and metal-oxide-semiconductor Q3, the metal-oxide-semiconductor Q3 and the output end of VCC power supply circuit is electrically connected,
The diode D4 is in parallel with metal-oxide-semiconductor Q3 and capacitor C8 respectively, and the metal-oxide-semiconductor Q3 is connected by capacitor C18 with metal-oxide-semiconductor Q4, institute
It states and is parallel with zener diode Z3 on the right side of primary side N3, the zener diode Z3 and metal-oxide-semiconductor Q4 are in parallel, the metal-oxide-semiconductor Q4
In parallel with capacitor C17 and diode D10 respectively, the capacitor C17 and diode D10 are in parallel, the diode D4 and capacitor C17
Output end connection, and the diode D4 and capacitor C17 are connected to the first primary side of transformer T1, the capacitor C18
It is connected to the first primary side of transformer T1, the primary side of the transformer T1 is connected with diode DS7, diode DS6, capacitor
CS11, resistance RS1 and resistance RS2, the diode DS7 and diode DS6 are in parallel, and diode DS7 and diode DS6 concatenation
In resistance RS26 and resistance RS27 parallel circuit, the resistance RS26 and resistance RS27 parallel circuit and resistance RS1 and resistance RS2
Parallel circuit in series, the N-channel of the metal-oxide-semiconductor Q3 are connected to resistance R22 and resistance R6, and the foot of the chip IC 1 passes through
Resistance R17 is output to totem circuit, and the totem circuit includes NPN type triode Q1 and PNP type triode Q2.
The present invention also provides a kind of guard method of the LED circuit of the single- stage PFC of double-transistor flyback, this method is double
The single- stage PFC circuit of pipe circuit of reversed excitation and PSR are combined together, and MOS is resistance to when can preferably handle the input of higher alternating voltage
Pressure problem, the pressure-resistant MOS of this application about 1KV or more, the MOS of the 650V or 700V that commonly use pressure resistance with two are used in series, can
Preferably to solve the problems, such as the high voltage of single MOS, while single high-pressure MOS compares relatively, and two low pressure MOSRDS are smaller, damage
Consumption is smaller, improves overall efficiency, because being that common MOS type selecting is also easy, supplier is also easy stock, while cost
It is low, it reduces costs, the MOS of a high voltage, the MOS of significantly larger than two low pressure, specific work process is as follows:
S1, pwm signal amplify IC by the defeated totem formed to NPN type triode Q1 and PNP type triode Q2 of foot of IC1
Current drive capability, pwm signal through the defeated primary side N1 to transformer T2 of capacitor C2;
S2, transformer T2 primary side N1 be the input signal end of transformer T2, when primary side N1 has pwm signal, become
The two primary side N2 and primary side N3 of depressor T2 sense the pwm signal of corresponding phase according to Same Name of Ends principle simultaneously;
S3, when the primary side N1 of transformer T2 be PWM high level input when, the two primary side N2 and secondary of transformer T2
Side N3 understands just lower negative high level signal in induction simultaneously and is respectively added to metal-oxide-semiconductor Q3 and metal-oxide-semiconductor Q4Vgs according to Same Name of Ends principle;
Metal-oxide-semiconductor Q3 and metal-oxide-semiconductor Q4 are simultaneously turned on, and the inductive current of transformer will be linearly increasing and energy is stored in transformer;
S4, when the primary side N1 of transformer T2 be PWM low level input when, the two primary side N2 and secondary of transformer T2
Side N3 understands signal positive under bearing in induction simultaneously and is respectively added to metal-oxide-semiconductor Q3 and metal-oxide-semiconductor Q4Vgs, then metal-oxide-semiconductor according to Same Name of Ends principle
Energy is transferred to secondary side through output diode DS7 and diode DS6 by Q3 and metal-oxide-semiconductor Q4 cut-off transformer;Because of leakage inductance institute
The voltage of formation will lead to 2 recycling diode conductings, diode D4 and diode D10 conducting, and magnetic core excitation is resetted, in order to avoid
Magnetic saturation;
S5, transformer T2 pwm signal constantly export the pwm signal of low and high level, be exactly the continuous function for repeating S3 and S4
Can, in this way by the Push And Release of metal-oxide-semiconductor Q3 and metal-oxide-semiconductor Q4, the through and off of transformer are just energy from once defeated to secondary side;
The pwm signal of S6, S5 can export corresponding square wave, through core in the VCC pin T 1-5Pin of transformer T1 after being formed
Piece IC1ZCS is detected, into determining to identify, is realized at the lowest point and is opened and turn off, realize the function of PSR, form high PFC, low
THD。
In summary: for the present invention using (two-tube) series connection of two MOS, preferable solution is high because of AC-input voltage, and
Cause MOS pressure resistance higher, type selecting is difficult, and the supply of material is difficult, and the puzzlement of goods hardly possible is adjusted to reduce cost because general MOS can be selected;The present invention
Circuit apply in single- stage PFC circuit, can also solve the LED application requirement of the low THD of high PF, it is simple to reach circuit, at low cost,
Power density is high;For the present invention because circuit structure is simple, the resistance to nature RDS that forces down of MOS is small, and low, high-efficient, the saving energy is lost,
Extend life of product, while cost is also low, reduces costs, the MOS of a high voltage, the MOS of significantly larger than two low pressure.
The foregoing is only a preferred embodiment of the present invention, but scope of protection of the present invention is not limited thereto,
Anyone skilled in the art in the technical scope disclosed by the present invention, according to the technique and scheme of the present invention and its
Inventive concept is subject to equivalent substitution or change, should be covered by the protection scope of the present invention.