CN105679782B - Contact-type image sensor - Google Patents
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- CN105679782B CN105679782B CN201410668283.7A CN201410668283A CN105679782B CN 105679782 B CN105679782 B CN 105679782B CN 201410668283 A CN201410668283 A CN 201410668283A CN 105679782 B CN105679782 B CN 105679782B
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Abstract
A kind of contact-type image sensor, comprising: protective layer；Backlight；Image sensor chip between the protective layer and backlight, described image sensor chip surface include pixel array region and the peripheral region around the pixel array region；In the pixel array region and the peripheral region; at least one region includes through hole area; the through hole area has the through-hole through described image sensor chip thickness, and the light that the backlight issues can pass through described image sensor chip via the through-hole and reach the protective layer.The contact-type image sensor thickness reduces, and structure simplifies.
Description
Technical field
The present invention relates to field of image sensors more particularly to a kind of contact-type image sensors.
Background technique
When contact-type image sensor carries out Image Acquisition, collected object is tightly attached to contact-type image sensor surface
When, external light source can not penetrate opaque object illumination to the surface of object and contact-type image sensor, therefore can not shape
At effective photoelectric respone.For that purpose it is necessary to realize illuminating for collected object using complicated optical path.
Complementary metal oxide semiconductor (CMOS) image sensor chip is a kind of to convert optical signals into electric signal
Semiconductor devices.Cmos image sensor chip has many advantages, such as.Its photosensitive element (i.e. pixel) may be implemented very sensitive
Photoresponse.Biggish photosignal can be generated when light intensity is very weak, this photosignal is much larger than making an uproar in system
Sound.This point and simple photodiode form striking contrast.Further advantage includes can be by control circuit, Photoelectric Detection
Device, signal processing unit and analog to digital conversion circuit etc. are integrated in same chip, at low cost, noise is low and yield is high, therefore
Cmos image sensor chip is widely applied, and is often used as the chip of contact-type image sensor.
The schematic diagram of the photosensitive route of existing contact-type image sensor is as shown in Figure 1.The light that light source 101 is launched
After the refraction of prism 103, it is radiated at the object 107 on protective layer 105 across protective layer 105,107 surface of object is to light
Line has reflex, therefore can generate reflection light.Also, the texture of 107 surface different location of object is different (such as to work as object
When body 107 is finger, surface texture is fingerprint), cause the intensity of reflected light different in spatial distribution.Reflection light again
It is secondary that the refraction of the another set prism 109 by being located at 105 inside of protective layer reaches lens 111 after protective layer 105, and
It is pooled on image sensor chip 113 via lens 111, generates final image.It can intuitively be obtained from Fig. 1, it is existing
Contact-type image sensor complicated integral structure is heavy.
Summary of the invention
Problems solved by the invention is to provide a kind of contact-type image sensor, to simplify the structure of imaging sensor.
To solve the above problems, the present invention provides a kind of contact-type image sensor, comprising:
Protective layer；
Backlight；
Image sensor chip between the protective layer and backlight, described image sensor chip surface include
Pixel array region and peripheral region around the pixel array region；
In the pixel array region and the peripheral region, at least one region includes through hole area, the through hole area tool
There is the through-hole through described image sensor chip thickness, the light that the backlight issues can pass through institute via the through-hole
It states image sensor chip and reaches the protective layer, and pass through the protective layer and reach target object, in target object surface reality
Now reflect.
Optionally, the pixel array region includes multiple pixel regions of array arrangement, and each pixel region includes sense
Light area, circuit region and at least one described through hole area.
Optionally, the peripheral region includes multiple through hole areas.
Optionally, the through hole area is evenly distributed on the pixel array region periphery.
Optionally, the pixel array region includes multiple rectangular pixels areas of array arrangement, and the through hole area is described in
The distance of pixel array region is less than 20 times of any rectangle side length in the rectangular pixels area.
Optionally, the diameter of the through-hole is 5 μm or more.
Optionally, the diameter of the through-hole is deeply than selection in 1:5 to 1:100.
Optionally, the thickness of described image sensor chip is less than or equal to 500 μm.
Optionally, the protective layer is glass substrate, plastic base or fiber optic substrate.
Optionally, the backlight is one of visible light source, infrared light supply and ultraviolet source or a variety of.
Optionally, described image sensor chip is CMOS fingerprint image sensor chip.
Optionally, described image sensor chip is non-crystalline silicon tft fingerprint image sensor chip.
Compared with prior art, technical solution of the present invention has the advantage that
In technical solution of the present invention, contact-type image sensor include protective layer, backlight and be located at protective layer and
Image sensor chip between backlight, described image sensor chip surface include pixel array region and around the picture
The peripheral region of primitive matrix column region, in the pixel array region and the peripheral region, at least one region includes through hole area,
The through hole area has the through-hole through described image sensor chip thickness, and the light that the backlight issues can be via institute
It states through-hole and reaches the protective layer across described image sensor chip, and the protective layer can be passed through and reach target object,
It realizes and reflects in target object surface, reflection light can be received by the pixel array on image sensor chip, to obtain
Target object surface image information.Since the light of backlight can be passed by the through-hole transmitted image in image sensor chip
Sensor chip, therefore, the contact-type image sensor do not need using any prism or lens can normal imaging, thus
Reduce the thickness of contact-type image sensor substantially, simplify the structure, meets the increasingly lightening requirement of electronic product, side
Just contact-type image sensor and the assembling of other electronic products cooperate, and have expanded the operation strategies of contact-type image sensor.
Further, pixel array region includes multiple pixel regions of array arrangement, each pixel region include photosensitive area,
Circuit region and at least one described through hole area, and through-hole is located in through hole area, i.e., through-hole is located in pixel array region.At this point,
Include through hole area in each pixel region, there is at least one through-hole in each through hole area, entire contact-type image sensor
Multiple through-holes are evenly distributed in pixel array region, therefore, the light in backlight can be more and be relatively evenly penetrated
Image sensor chip, and the object on protective layer is reached, guarantee that contact-type image sensor has ideal image-forming condition, from
And improve the image quality of contact-type image sensor.
Detailed description of the invention
Fig. 1 is the photosensitive schematic circuit of existing contact-type image sensor；
Fig. 2 is the schematic diagram of the section structure for the contact-type image sensor that one embodiment of the invention provides；
Fig. 3 is the first overlooking structure diagram of pixel in contact-type image sensor shown in Fig. 2；
Fig. 4 is second of overlooking structure diagram of pixel in contact-type image sensor shown in Fig. 2；
Fig. 5 is the third overlooking structure diagram of pixel in contact-type image sensor shown in Fig. 2；
Fig. 6 is the circuit diagram of pixel in contact-type image sensor shown in Fig. 2；
Fig. 7 be another embodiment of the present invention provides contact-type image sensor the schematic diagram of the section structure；
Fig. 8 is the overlooking structure diagram of image sensor chip in contact-type image sensor shown in Fig. 7.
Specific embodiment
When contact-type image sensor carries out Image Acquisition, collected object is tightly attached to image sensor surface, outside
The light source on boundary can not be through opaque object illumination to the surface of object and sensor.Also, in order to guarantee imaging sensor
What chip received only is by the reflected light of object, it is desirable that the pixel back side of image sensor chip is unable to light transmission, i.e.,
Light can not be directly from image sensor chip back side illuminaton to the pixel on image sensor chip surface.Therefore, existing to connect
Touch imaging sensor generallys use labyrinth shown in FIG. 1.However, this labyrinth is heavy and thickness is big, do not meet
The increasingly lightening trend of electronic product, and this labyrinth is difficult to integrate with other electronic products, therefore its
With being very limited.
For this purpose, the present invention provides a kind of new contact-type image sensor comprising protective layer, backlight and being located at is protected
Image sensor chip between sheath and backlight, described image sensor chip surface include pixel array region and surround
The peripheral region of the pixel array region, in the pixel array region and the peripheral region, at least one region includes
Through hole area, the through hole area have the through-hole through described image sensor chip thickness, the light energy that the backlight issues
It is enough to pass through the described image sensor chip arrival protective layer via the through-hole.Since the light of backlight can pass through figure
As the through-hole transmitted image sensor chip in sensor chip, therefore, the contact-type image sensor do not need using appoint
What prism or lens can normal imaging simplify the structure so that the thickness of contact-type image sensor be made substantially to reduce, it is full
Foot electronic product increasingly lightening requirement facilitates contact-type image sensor and other electronic products to assemble and cooperates, expands
The operation strategies of contact-type image sensor.
To make the above purposes, features and advantages of the invention more obvious and understandable, with reference to the accompanying drawing to the present invention
Specific embodiment be described in detail.
The embodiment of the present invention one provides a kind of contact-type image sensor, incorporated by reference to referring to figs. 2 to Fig. 6.
Referring to FIG. 2, showing the schematic diagram of the section structure of the contact-type image sensor.
The contact-type image sensor include protective layer 210, backlight 230 and be located at protective layer 210 and backlight
Image sensor chip 220 between 230.(this surface refers to image sensor chip 220 on the surface of image sensor chip 220
Surface towards protective layer 210) it further include pixel array region 220A and the peripheral region around pixel array region 220A
220B is separated between peripheral region 220B and pixel array region 220A with dotted line (not marking).Pixel array region 220A packet
Include multiple pixel regions (not marking in Fig. 2) of array arrangement.Surface region where a pixel region i.e. pixel 221, this implementation
In example, pixel 221 is as shown in the part that dotted line frame (not marking) is surrounded in Fig. 2.
With continued reference to FIG. 2, the cross-section structure of pixel 221 shows that each pixel 221 includes photosensitive element 222.This implementation
In example, photosensitive element 222 is specifically as follows light sensitive diode.Each pixel 221 further includes through-hole 223, and through-hole 223 runs through image
220 thickness of sensor chip, the light that backlight 230 issues can be reached via through-hole 223 across image sensor chip 220
Protective layer 210.
In the present embodiment, patch can directly be laminated between protective layer 210 and image sensor chip 220 by bonding method
It is combined.In other embodiments, the two can also be by glue laminating, and makes to retain certain space between the two.Other realities
Apply in example, the two can also be by shell (not shown) will fit together.
In the present embodiment, protective layer 210 can be glass substrate, plastic base, fiber optic substrate, ceramic substrate or blue treasured
Ground mass plate.Protective layer 210 is used to receive the pressing operation of finger.For example, showing the pressing of object 201 in protective layer 210 in Fig. 2
Upper surface.
In the present embodiment, object 201 specifically can be finger, and image sensor chip 220 can be CMOS fingerprint at this time
Image sensor chip.CMOS fingerprint image sensor chip is typically fabricated on Silicon Wafer, therefore is located at the portion below pixel
Dividing is usually opaque silicon substrate.Image sensor chip 220 or non-crystalline silicon tft fingerprint image sensor chip
220, amorphous silicon fingerprint image sensor chip price is cheap, can reduce the cost of entire sensor.
It should be noted that in other embodiments of the invention, image sensor chip 220 is also possible to be produced on
Chip on bright substrate, when to make chip on the transparent substrate, through-hole 223 need not run through transparent substrate, and only need
Through not transparent chip body part.
In the present embodiment, backlight 230 can be one of visible light source, infrared light supply and ultraviolet source or a variety of.
Specifically, backlight 230 can be such as planar LED light or LED light guide plate.
Incorporated by reference to referring to figs. 2 and 3, Fig. 3 shows the first of pixel 221 in imaging sensor shown in Fig. 2 and overlooks knot
Structure schematic diagram.Wherein, each 221 surface of pixel is pixel region 2211, and pixel region 2211 includes photosensitive area 2221, circuit region 2241
With through hole area 2231.Photosensitive area 2221 is specifically as follows light sensitive diode region.It can have in circuit region 2241 multiple
Transistor.
In Fig. 3, through hole area 2231 and circuit region 2241 are located at two sides of photosensitive area 2221.Through hole area 2231 is longer
On one side with photosensitive area 2221 while isometric and adjacent, and the long side of circuit region 2241 is less than photosensitive area 2221, therefore circuit region
2241 three sides are perceived area's encirclement.Through hole area 2231 has through-hole 223 shown in Fig. 2.The plan view shape of through-hole 223 can be with
It is identical as 2231 shape of through hole area, such as the rectangle in Fig. 3.But the plan view shape of through-hole 223 may be through hole area 2231
A part, for example, inscribed circle of through hole area 2231.
When the timing of area all one of the area and circuit region 2241 of pixel region 2211, through hole area 2231 and photosensitive area 2221
The gross area is also certain.At this point it is possible to adjust through hole area 2231 and the respective area of photosensitive area 2221 as needed.For example, in order to mention
High photosensitive effective area, should improve the area of photosensitive area 2221, correspondingly just reduce 2231 area of through hole area；In order to increase
Through the light of through-hole 223, the area of through hole area 2231 should be improved, correspondingly just reduces the area of photosensitive area 2221.
Second of vertical view knot of pixel 221 in imaging sensor shown in Fig. 2 is shown incorporated by reference to reference Fig. 2 and Fig. 4, Fig. 4
Structure schematic diagram.221 surface of pixel is pixel region 2212, and pixel region 2212 includes photosensitive area 2222, circuit region 2242 and through hole area
2232.Unlike Fig. 3, in Fig. 4, through hole area 2231 is located at an angle of entire pixel region 2212, accounts for about entire pixel region
A quarter.
Incorporated by reference to referring to figs. 2 and 5, the third plan structure that Fig. 5 shows pixel in imaging sensor shown in Fig. 2 is shown
It is intended to.221 surface of pixel is pixel region 2213, and pixel region 2213 includes photosensitive area 2223, circuit region 2243 and through hole area 2233.
In Fig. 5, through hole area 2233 also accounts for about a quarter of entire pixel region, but unlike Fig. 4, in Fig. 5, through hole area 2233
In in a line of pixel region 2213,2,233 3 sides of through hole area are surrounded by photosensitive area 2223.
It should be noted that other than three kinds of distribution situations shown in Fig. 3 to Fig. 5, in other embodiments of the invention,
Photosensitive area, circuit region and through hole area are also possible to other distribution situations, such as the location and shape of circuit region also can change,
This is not limited by the present invention.
In the present embodiment, the diameter of through-hole 223 is suitble to be 5 μm or more.When the plan view shape of through-hole 223 is not round
When, the diameter of through-hole 223 refers to the inscribed circle diameter of 223 plan view shape of through-hole.If the diameter of through-hole 223 is not only given less than 5 μm
Technique increases many difficulty, and glazed area is smaller, through the insufficient light of chip, influences the quality of formed image.
In the present embodiment, the diameter of through-hole 223 deeply can be in 1:5 to 1:100 than selection.The deep ratio of the diameter of usual through-hole 223 is got over
It is big better.Because diameter depth ratio is bigger, when beating deeper hole, the diameter of through-hole 223 is bigger, is conducive to penetrating for light.But
By diameter deeply than improving more than 1:100, extremely complex technique is needed, process costs are increased, extends process cycle, therefore
In the present embodiment, diameter is deeply than selection in 1:100 or less.In addition, in order to guarantee enough photosensitive area areas, the diameter of through-hole 223
It needs to control in a certain range, therefore it is required that the diameter of through-hole 223 is deeply than being at least 1:5 or more.
In the present embodiment, the thickness of image sensor chip 220 can be for less than or equal to 500 μm.From the above analysis
It is found that in order to guarantee through-hole 223 diameter be suitble to can at 5 μm or more, and through-hole 223 diameter deeply than selection can be arrived in 1:5
1:100, it is desirable that the thickness of image sensor chip 220 is at 500 μm.Meanwhile smaller more facilitate of thickness of chip carries out through-hole 223
Production.However, to ensure that the mechanical strength of chip, and the chip not fragmentation in 223 manufacturing process of through-hole is prevented, usually
Chip also requires certain thickness.
In the present embodiment, through-hole 223 can be made of 223 technique of through silicon via, in the production process, be needed to chip list
Face is particularly protected, and in through-hole manufacturing process, to prevent chip fragmentation in 223 manufacturing process of through-hole with caution.
In the present embodiment, when image sensor chip 220 is CMOS fingerprint image sensor chip, cmos image sensing
Device chip 220 is made of pixel array and peripheral circuit, and circuit diagram is as shown in Figure 6.
Referring to FIG. 6, light sensitive diode PD and transistor M4 connect in the pixel 221 of CMOS fingerprint image sensor chip
It connects.Transistor M4 is connect with transistor M1.There is floating diffusion region FD, i.e. transistor M1 to connect between transistor M4 and transistor M1
It connects in one end of floating diffusion region FD.Transistor M2, transistor M3 and transistor MB form voltage follower, this voltage follower
It is connected to the floating diffusion region FD other end.Transistor M1 is used to carry out current potential reset to floating diffusion region FD.Transistor M3 is choosing
Logical switching transistor, is controlled by row gating signal.The multiple pixels 221 connect in same signal line pass through respective transistor
M3 shares signal wire, and can be output to letter by the FD voltage in only one last pixel 221 of signal control same row
On number line.
Transfer letter in image acquisition process, in the reset signal and transistor M4 grid first on transistor M1 grid
It number is simultaneously high (high level), transistor M1 and transistor M4 are opened, to reset to light sensitive diode PD.Subsequently enter sense
Optical-integral-time, light sensitive diode PD such as can convert photons at the charge (electronics than quantity when experiencing optical signal
Or hole), charge accumulates in light sensitive diode PD, and light intensity is higher, then the charge accumulated is more.Terminate in photosensitive integral
Afterwards, the reset signal on transistor M1 grid is high again, i.e. transistor M1 is again turned on, for floating diffusion region FD node
It is resetted.Then output voltage Vout signal is sampled, at this moment the signal on output voltage Vout is the low frequency of system
The superposition of noise (Vnoise) and resetting voltage (Vreset) is stored in capacitor Cr (not shown).Subsequent transistor M4 grid
On transfer signal draw high, transistor M4 is opened, and the optical charge on light sensitive diode PD is attracted to floating diffusion region FD node
Parasitic capacitance Cpara on, generating Vdiff=Q/Cpara, (wherein Q be the charge of corresponding light intensity accumulation, and Cpara is floating expansion
Dissipate area FD on parasitic capacitance) voltage change.Output voltage Vout signal is sampled again, at this moment collected signal
It is low-frequency noise (Vnoise), the superposition of resetting voltage (Vreset) and signal voltage (Vdiff) is stored in capacitor Cs and (does not show
In out).In this way, being stored in capacitor Cr and the difference of voltage that is stored on capacitor Cs is exactly the value Vdiff of signal voltage.Then,
Vdiff signal is handled by differential amplifier circuit and analog-digital converter to get the numerical value of digitized light intensity is arrived.
Complete object texture image can be obtained according to the light intensity numerical value of whole pixels 221.
It should be noted that Fig. 6 shows that the pixel 221 of CMOS fingerprint image sensor chip has 4T structure (4 crystal
Pipe).It should be noted that in other embodiments of the invention, pixel 221 is also possible to 3T, 5T or other types of knot
Structure.
In contact-type image sensor provided by the present embodiment, overall structure only includes protective layer 210, backlight 230
And the image sensor chip 220 between protective layer 210 and backlight 230, wherein the light of backlight 230 passes through figure
As the 223 transmitted image sensor chip 220 of through-hole in sensor chip 220, therefore, the contact-type image sensor is not required to
To use any prism or lens can normal imaging, so that the thickness of contact-type image sensor be made substantially to reduce, structure
Simplify, meet the increasingly lightening requirement of electronic product, contact-type image sensor and other electronic products is facilitated to assemble
Cooperation, has expanded the operation strategies of contact-type image sensor.
Also, in the present embodiment, pixel array region 220A includes multiple pixel regions of array arrangement, each pixel
Area includes photosensitive area, circuit region and at least one described through hole area, and through-hole 223 is located in through hole area, i.e., through-hole 223 is located at picture
In primitive matrix column region 220A.It is found that including through hole area in each pixel region, there is at least one through-hole in each through hole area
Multiple through-holes 223, therefore, backlight are evenly distributed in 223, the pixel array region 220A of entire contact-type image sensor
Light in 230 can more and relatively evenly transmitted image sensor chip 220, and reach the object on protective layer 210,
Guarantee that contact-type image sensor has ideal image-forming condition, to improve the image quality of contact-type image sensor.
Another embodiment of the present invention provides another contact-type image sensors, incorporated by reference to reference Fig. 7 to Fig. 8.
Referring to FIG. 7, showing the schematic diagram of the section structure of the contact-type image sensor.
The contact-type image sensor include protective layer 310, backlight 330 and be located at protective layer 310 and backlight
Image sensor chip 320 between 330.(this surface refers to image sensor chip 320 on the surface of image sensor chip 320
Surface towards protective layer 310) it further include pixel array region 320A and the peripheral region around pixel array region 320A
320B is separated between peripheral region 320B and pixel array region 320A with dotted line (not marking).
Incorporated by reference to reference Fig. 7 and Fig. 8, Fig. 8 is in contact-type image sensor shown in Fig. 7, image sensor chip 320
Overlooking structure diagram.Pixel array region 320A includes multiple pixel region 321A (please referring to Fig. 8) of array arrangement.Pixel region
A 321A i.e. pixel 321 (please referring to Fig. 7) region.The cross-section structure of pixel region 321A shows that each pixel 321 includes
Photosensitive element (does not mark).In the present embodiment, photosensitive element is specifically as follows light sensitive diode.
It include multiple through hole area 322A (please referring to Fig. 8) incorporated by reference to reference Fig. 7 and Fig. 8, peripheral region 320B.Through hole area
322A includes through-hole 322 (please referring to Fig. 7), and through-hole 322 runs through 320 thickness of image sensor chip, the light that backlight 330 issues
Line can pass through image sensor chip via through-hole and reach protective layer 310.
It should be noted that in other embodiments of the invention, peripheral region 320B may include other plan view shapes
Through hole area 322A, and the number of through hole area 322A is not construed as limiting.
In the present embodiment, through hole area 322A is evenly distributed on the periphery pixel array region 320A, and through hole area 322A exists
The more uniform distribution in peripheral region 302B the better.This distribution mode is conducive to penetrate imaging sensor core by through-hole 322
The light of piece 320 is preferably irradiated object 301 (please referring to Fig. 7), thus the reflection light for enabling object 301 to generate
Equably received by pixel 321.
In the present embodiment, patch can directly be laminated between protective layer 310 and image sensor chip 320 by bonding method
Be combined, can also be by glue laminating, and make to retain certain space between the two, can also be by shell (do not show
Protective layer 310 and image sensor chip 320 are fitted together out).
In the present embodiment, pixel array region 320A includes multiple rectangular pixels area 321A of array arrangement, and is arranged
It is (any that the distance of each through hole area 322A to pixel array region 320A are respectively less than any rectangle side length of rectangular pixels area 321A
The side length of any a line in rectangle side length, that is, rectangular pixels area) 20 times (such as the distance is any rectangle side length
One times, twice or three times etc.), to guarantee that through hole area 322A is smaller to the distance of pixel array region 320A, and then guarantee
The reflection light of object 301 can be received more by each pixel 321.
It should be noted that in other embodiments of the invention, the vertical view figure of through hole area 322A is also possible to other
Shape.
In the present embodiment, protective layer 310 can be glass substrate, plastic base, ceramic substrate, sapphire substrate or light
Fine substrate.Protective layer 310 is used to receive the pressing operation of finger.For example, showing the pressing of object 301 in protective layer 310 in Fig. 7
Upper surface.
In the present embodiment, object 201 specifically can be finger, and image sensor chip 320 can be CMOS fingerprint at this time
Image sensor chip.CMOS fingerprint image sensor chip is typically fabricated on Silicon Wafer, therefore is located at the portion below pixel
Dividing is usually opaque silicon substrate.Image sensor chip 320 or non-crystalline silicon tft fingerprint image sensor chip
320, non-crystalline silicon tft fingerprint image sensor chip price is cheap, can reduce the cost of entire sensor.
It should be noted that in other embodiments of the invention, image sensor chip 320 is also possible to be produced on
Chip on bright substrate, when to make chip on the transparent substrate, through-hole 322 need not run through transparent substrate, and only need
Through not transparent chip body part.
In the present embodiment, backlight 330 can be one of visible light source, infrared light supply and ultraviolet source or a variety of.
Specifically, backlight 330 can be such as planar LED light or LED light guide plate.
In the present embodiment, the diameter of through-hole 322 is suitble to be 5 μm or more.When the plan view shape of through-hole 322 is not round
When, the diameter of through-hole 322 refers to the inscribed circle diameter of 322 plan view shape of through-hole.If the diameter of through-hole 322 is not only given less than 5 μm
Technique increases many difficulty, and glazed area is smaller, through the insufficient light of chip, influences the quality of formed image.
In the present embodiment, the diameter of through-hole 322 deeply can be in 1:5 to 1:100 than selection.The deep ratio of the diameter of usual through-hole 322 is got over
It is big better.Because diameter depth ratio is bigger, when beating deeper hole, the diameter of through-hole 322 is bigger, is conducive to penetrating for light.But
By diameter deeply than improving more than 1:100, extremely complex technique is needed, and increase accordingly process costs, extend technique
Period.Therefore, in the present embodiment, diameter is deeply than selection in 1:100 or less.In addition, in order to guarantee enough photosensitive area areas, through-hole
322 diameter needs to control in a certain range, therefore it is required that the diameter of through-hole 322 is deeply than being at least 1:5 or more.
In the present embodiment, the thickness of image sensor chip 320 can be for less than or equal to 500 μm.From the above analysis
It is found that in order to guarantee that the diameter of through-hole 322 can be suitble at 5 μm or more, and the diameter of through-hole 322 can arrive deeply than selection in 1:5
1:100, it is desirable that the thickness of image sensor chip 320 is at 500 μm or less.Meanwhile smaller more facilitate of thickness of chip is led to
The production in hole 322.However, to ensure that the mechanical strength of chip, and the chip not fragmentation in 322 manufacturing process of through-hole is prevented,
Usual chip also requires certain thickness, such as the thickness of image sensor chip 320 can control at 25 μm or more.
In the present embodiment, through-hole 322 can be made of through silicon via technique, in the production process, be needed to chip surface
It is particularly protected, and in through-hole manufacturing process, to prevent chip fragmentation in 322 manufacturing process of through-hole with caution.
Pixel 321 in the present embodiment, when image sensor chip is CMOS fingerprint image sensor chip, in chip
It can have 4T structure (4 transistors).It should be noted that in other embodiments of the invention, pixel 321 is also possible to
3T, 5T or other types of structure.
In contact-type image sensor provided by the present embodiment, overall structure only includes protective layer 310, backlight 330
And the image sensor chip 320 between protective layer 310 and backlight 330, wherein the light of backlight 330 passes through figure
As the 322 transmitted image sensor chip 320 of through-hole in sensor chip 320, therefore, the contact-type image sensor is not required to
To use any prism or lens can normal imaging, so that the thickness of contact-type image sensor be made substantially to reduce, structure
Simplify, meet the increasingly lightening requirement of electronic product, contact-type image sensor and other electronic products is facilitated to assemble
Cooperation, has expanded the operation strategies of contact-type image sensor.
Also, in the present embodiment, the through-hole 322 in image sensor chip 320 is located at peripheral region 320B, and external zones
Domain 320B includes multiple through hole areas, and through hole area has the through-hole 322 through 320 thickness of described image sensor chip.Therefore, exist
During making through-hole 322, it can preferably prevent the pixel in pixel array region 320A to be adversely affected, that is, prevent
The production of through-hole 322 adversely affects the unfailing performance of contact-type image sensor.
It should be noted that in other embodiments of the invention, it can also be simultaneously on image sensor chip surface
Through hole area is arranged in pixel array region and peripheral region, and the through hole area has through the logical of described image sensor chip thickness
Hole, the light that the backlight issues can pass through described image sensor chip via the through-hole and reach the protective layer.
By the way that through hole area is arranged in pixel array region and peripheral region simultaneously, more light can be made to pass through via the through-hole described
Image sensor chip reaches the protective layer, and passes through the protective layer and reach target object, realizes in target object surface
Reflection, to obtain target object surface image information.
Although present disclosure is as above, present invention is not limited to this.Anyone skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (11)
1. a kind of contact-type image sensor, comprising:
Protective layer；
Backlight；
Image sensor chip between the protective layer and backlight, described image sensor chip surface include pixel
Array region and peripheral region around the pixel array region；
It is characterized in that,
In the pixel array region and the peripheral region, the peripheral region includes multiple through hole areas, the through hole area tool
There is the through-hole through described image sensor chip thickness, the light that the backlight issues can pass through institute via the through-hole
It states image sensor chip and reaches the protective layer.
2. contact-type image sensor as described in claim 1, which is characterized in that the pixel array region includes array row
Multiple pixel regions of cloth, each pixel region include photosensitive area, circuit region and at least one through hole area.
3. contact-type image sensor as described in claim 1, which is characterized in that the through hole area is evenly distributed on the picture
Pixel array area peripheral edge.
4. contact-type image sensor as described in claim 1, which is characterized in that the pixel array region includes array row
The distance in multiple rectangular pixels areas of cloth, the through hole area to the pixel array region is less than any square in rectangular pixels area
20 times of shape side length.
5. contact-type image sensor as claimed in claim 2, which is characterized in that the through-hole of the through hole area of the peripheral region
Or the diameter of the through-hole of the through hole area of the pixel array region is 5 μm or more.
6. contact-type image sensor as claimed in claim 2, which is characterized in that the through-hole of the through hole area of the peripheral region
Or the diameter of the through-hole of the through hole area of the pixel array region is deeply than selection in 1:5 to 1:100.
7. contact-type image sensor as claimed in claim 1 or 2, which is characterized in that the thickness of described image sensor chip
Degree is less than or equal to 500 μm.
8. contact-type image sensor as described in claim 1, which is characterized in that the protective layer is glass substrate, plastics
Substrate, fiber optic substrate, sapphire substrate or ceramic substrate.
9. contact-type image sensor as described in claim 1, which is characterized in that the backlight is visible light source, infrared
One of light source and ultraviolet source are a variety of.
10. contact-type image sensor as described in claim 1, which is characterized in that described image sensor chip is CMOS
Fingerprint image sensor chip.
11. contact-type image sensor as described in claim 1, which is characterized in that described image sensor chip is amorphous
Silicon TFT fingerprint image sensor chip.
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| CN107590422A (en) * | 2016-07-08 | 2018-01-16 | 上海箩箕技术有限公司 | Optical fingerprint sensor module |
| CN107590421A (en) * | 2016-07-08 | 2018-01-16 | 上海箩箕技术有限公司 | Optical fingerprint sensor module |
| CN107590424A (en) * | 2016-07-08 | 2018-01-16 | 上海箩箕技术有限公司 | Optical fingerprint sensor module |
| CN107958194B (en) * | 2017-08-17 | 2021-11-19 | 柳州梓博科技有限公司 | Photoelectric sensing device and electronic equipment |
| CN109426766A (en) * | 2017-08-23 | 2019-03-05 | 上海箩箕技术有限公司 | Fingerprint imaging mould group and electronic equipment |
| CN108270942B (en) | 2018-01-31 | 2020-09-25 | 威海华菱光电股份有限公司 | Image scanning device, receiving method and device for controlling image scanning optical signal |
| CN108596060B (en) * | 2018-04-12 | 2021-10-15 | 上海思立微电子科技有限公司 | Fingerprint image processing method, fingerprint identification device and electronic equipment |
| KR102393910B1 (en) | 2019-03-22 | 2022-05-03 | 아크소프트 코포레이션 리미티드 | Tiled image sensor |
| CN110190074A (en) * | 2019-04-26 | 2019-08-30 | 芯盟科技有限公司 | Imaging sensor and forming method thereof, endoscopic probe |
| CN110379805B (en) * | 2019-07-25 | 2021-02-05 | 豪威科技(上海)有限公司 | Image sensor wafer, chip and manufacturing method thereof |
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