CN105679227A - Display device and method for providing supply voltage of grid drive circuit - Google Patents
Display device and method for providing supply voltage of grid drive circuit Download PDFInfo
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- CN105679227A CN105679227A CN201610223558.5A CN201610223558A CN105679227A CN 105679227 A CN105679227 A CN 105679227A CN 201610223558 A CN201610223558 A CN 201610223558A CN 105679227 A CN105679227 A CN 105679227A
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- 238000000034 method Methods 0.000 title claims description 55
- 239000010409 thin film Substances 0.000 claims abstract description 51
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000010168 coupling process Methods 0.000 claims description 49
- 230000008878 coupling Effects 0.000 claims description 48
- 238000005859 coupling reaction Methods 0.000 claims description 48
- 230000008569 process Effects 0.000 claims description 24
- 230000010355 oscillation Effects 0.000 claims description 22
- 239000013078 crystal Substances 0.000 claims 3
- 238000012545 processing Methods 0.000 abstract description 20
- 230000008859 change Effects 0.000 description 32
- 101000885321 Homo sapiens Serine/threonine-protein kinase DCLK1 Proteins 0.000 description 24
- 102100039758 Serine/threonine-protein kinase DCLK1 Human genes 0.000 description 24
- 238000010586 diagram Methods 0.000 description 7
- 230000036413 temperature sense Effects 0.000 description 4
- 102100031577 High affinity copper uptake protein 1 Human genes 0.000 description 3
- 101710196315 High affinity copper uptake protein 1 Proteins 0.000 description 3
- 101100329714 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) CTR3 gene Proteins 0.000 description 3
- 239000008186 active pharmaceutical agent Substances 0.000 description 3
- 101150004012 ctr4 gene Proteins 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 102100031145 Probable low affinity copper uptake protein 2 Human genes 0.000 description 2
- 101710095010 Probable low affinity copper uptake protein 2 Proteins 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000001427 coherent effect Effects 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
Classifications
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3696—Generation of voltages supplied to electrode drivers
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/02—Improving the quality of display appearance
- G09G2320/0223—Compensation for problems related to R-C delay and attenuation in electrodes of matrix panels, e.g. in gate electrodes or on-substrate video signal electrodes
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/04—Maintaining the quality of display appearance
- G09G2320/041—Temperature compensation
Abstract
A display device comprises a gate driving circuit, a temperature sensing circuit, a processing circuit and a power supply circuit. The gate driving circuit comprises a plurality of first thin film transistors, and the first thin film transistors are arranged on a substrate. The temperature sensing circuit comprises a plurality of second thin film transistors, the second thin film transistors are arranged on the substrate, and the temperature sensing circuit is used for generating a temperature sensing signal according to a sensed temperature. The processing circuit is electrically coupled to the temperature sensing circuit and is used for outputting at least one adjusting bias voltage according to the frequency of the temperature sensing signal. The power supply circuit is electrically coupled to the processing circuit and the gate driving circuit and is configured to provide at least one supply voltage to the gate driving circuit corresponding to the at least one adjustment bias.
Description
Technical field
This case relates to a kind of electronic installation and method. Specifically, this case relates to the offer method of the supply voltage of a kind of display unit and gate driver circuit.
Background technology
Along with the development of science and technology, display unit has been widely used in the middle of the life of people.
Typical display unit, can comprise gate driver circuit and source electrode drive circuit. Gate driver circuit in order to provide sweep signal to active region, to make the pixel of active region open. The pixel that source electrode drive circuit is opened in data voltage to active region in order to provide, to make the pixel in active region show corresponding to data voltage.
But, with the rise in temperature of display unit, the critical voltage of the transistor in gate driver circuit also rises. So will cause the driving current damping in gate driver circuit, and the normal operation of unfavorable display unit. Therefore, a kind of improvement means should be suggested.
Summary of the invention
This case one is implemented mode and is related to a kind of display unit. According to this case one embodiment, display unit comprises: gate driver circuit, temperature sensing circuit, process circuit and power supply circuit. Gate driver circuit comprises multiple first thin film transistor, and those first thin film transistors are arranged on a substrate. Temperature sensing circuit comprises multiple 2nd thin film transistor, and those the 2nd thin film transistors are arranged on this substrate, and this temperature sensing circuit is in order to produce a temperature sensing signal according to a sensing temperature. Process this temperature sensing circuit of circuit electric property coupling, in order at least one adjustment bias voltage of the rate-adaptive pacemaker according to this temperature sensing signal. This process circuit of power supply circuit electric property coupling and this gate driver circuit, in order to provide at least one supply voltage to this gate driver circuit corresponding to this at least one adjustment bias voltage.
Another enforcement mode of this case relates to the offer method of the supply voltage of a kind of gate driver circuit. According to this case one embodiment, this offer method comprises: utilize a temperature sensing circuit, produces a temperature sensing signal corresponding to a sensing temperature; At least one adjustment bias voltage of rate-adaptive pacemaker according to this temperature sensing signal; And provide at least one supply voltage to gate driver circuit corresponding to this at least one adjustment bias voltage;Wherein this gate driver circuit comprises multiple first thin film transistor, this temperature sensing circuit, comprises multiple 2nd thin film transistor, and those first thin film transistors and those the 2nd thin film transistors are arranged on same substrate.
By applying an above-mentioned embodiment, supply voltage can be provided to gate driver circuit corresponding to sensing temperature, to guarantee the normal operation of gate driver circuit under temperature variation.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the display unit illustrated according to this case one embodiment;
Fig. 2 is the concrete schematic diagram of the temperature sensing circuit, process circuit and the related elements thereof that illustrate according to this case one embodiment;
Fig. 3 is the coherent signal schematic diagram of the display unit illustrated according to this case one embodiment;
Fig. 4 is the schematic circuit of the temperature sensing circuit illustrated according to this case one embodiment;
Fig. 5 is the schematic circuit of the power supply circuit illustrated according to this case one embodiment;
The schema of the offer method of the supply voltage of gate driver circuit of Fig. 6 for illustrating according to one embodiment of the invention;
Fig. 7 A is the schematic diagram of difference between the trim plate illustrated according to one embodiment of the invention;
Fig. 7 B is the frequency of oscillation signal and the graph of a relation of control voltage that illustrate according to one embodiment of the invention;
Fig. 8 A is the frequency of change over signal and the graph of a relation of temperature that illustrate according to one embodiment of the invention;
Fig. 8 B is the number of sample trigger signal and the graph of a relation of temperature that illustrate according to one embodiment of the invention;
Fig. 8 C is the number of sample trigger signal and the graph of a relation of temperature that illustrate according to another embodiment of the present invention;
Fig. 9 is the graph of a relation of supply voltage and the temperature illustrated according to one embodiment of the invention;
Figure 10 is the oscillogram illustrated according to the present invention one experimental example;
Figure 11 is the oscillogram illustrated according to the present invention one experimental example.
Description of reference numerals:
10: display unit
20: active region
30: source electrode drive circuit
40: gate driver circuit
50: temperature sensing circuit
60: process circuit
70: power supply circuit
SBT: substrate
TCLK1: oscillation signal
TCLK2: temperature sensing signal
DCLK: change over signal
RCLK: with reference to clock signal
VBS: adjustment bias voltage
VSP: supply voltage
VCT: control voltage
VREF: reference voltage
TRG: sample trigger signal
TP: temperature data
DCD: voltage data
OSC: vibrator
CMP: comparer
LSF: level translator
FDV: except frequency device
CNT: counter
CVR: transmodulator
LT: search table
ROSC: produce circuit with reference to clock signal
DS: display element
DAC: digital analog converter
AND: with door
INV: phase inverter
TTR: thin film transistor
EN: enable signal
CTR1-CTR4: transistor
WK1-WK3: working cell
DV1-DV3: partial pressure unit
CP1-CP3: charge pump
CO1-CO3: electric capacity
C1-C3: electric capacity
DN: diode
L1: inductance
R1-R6: resistance
T1-T3: transistor
D1-D6: diode
VFB1-VFB3: feedback voltage
VBS1-VBS3: adjustment bias voltage
AVDD: supply voltage
VGH: supply voltage
VGL: supply voltage
VIN: input voltage
200: method
S1-S3: step
W1-W6: waveform
V1-V9: waveform
Embodiment
Below by with accompanying drawing and describe in detail the spirit clearly demonstrating present disclosure, in any art, technician is after the embodiment understanding present disclosure, when by the technology of present disclosure institute teaching, can being changed and modify, it does not depart from spirit and the scope of present disclosure.
About " first " used herein, " the 2nd " ... Deng, the not special meaning censuring order or cis-position, is also not used to limit the present invention, its element only described with constructed term to distinguish or operation.
About " electric property coupling " used herein, can refer to two or multiple element mutually directly make entity or in electrical contact, or mutually indirectly put into effect body or in electrical contact, and " electric property coupling " also can refer to two or multiple elements mutual operation or action.
About " comprising " used herein, " comprising ", " having ", " containing " etc., be open term, namely mean including but not limited to.
About used herein " and/or ", be comprise the arbitrary of described things or all combine.
About direction used herein term, such as: upper and lower, left and right, front or rear etc., it is only the direction with reference to attached drawings. Therefore, it may also be useful to direction term be used to illustrate not be used for limiting this case.
About word used herein (terms), outside indicating especially, usually have each word use in this area, in content disclosed herein with the usual meaning in special content. Some is in order to describe word of the present disclosure by lower or discuss in the other places of this specification sheets, to provide those skilled in the art about guiding extra in description of the present disclosure.
Fig. 1 is the schematic diagram of the display unit 10 illustrated according to this case one embodiment. In the present embodiment, display unit 10 comprises substrate SBT, active region 20, source electrode drive circuit 30, gate driver circuit 40, temperature sensing circuit 50, process circuit 60 and power supply circuit 70. It should be noted that, in the present embodiment, though for two gate driver circuits and two temperature sensing circuits, the quantity of right gate driver circuit and temperature sensing circuit can change (such as can be all one or be respectively other quantity) according to actual demand respectively, therefore this case is not as limit.
In the present embodiment, active region 20, gate driver circuit 40, temperature sensing circuit 50 are arranged on substrate SBT. In the present embodiment, temperature sensing circuit 50 is arranged corresponding to gate driver circuit 40. In one embodiment, temperature sensing circuit 50 is adjacent to gate driver circuit 40 and arranges.
In the present embodiment, source electrode drive circuit 30 and gate driver circuit 40 electric property coupling active region 20. Temperature sensing circuit 50 electric property coupling process circuit 60. Process circuit 60 electric property coupling power supply circuit 70. Power supply circuit 70 electric property coupling gate driver circuit 40.
In the present embodiment, gate driver circuit 40 comprises multiple first thin film transistor (not illustrating). This little first thin film transistor is arranged on substrate SBT. Temperature sensing circuit 50 comprises multiple 2nd thin film transistor (being such as the 2nd thin film transistor TTR in Fig. 4). This little 2nd thin film transistor is arranged on substrate SBT. In certain embodiments, this little first thin film transistor and this little 2nd thin film transistor utilize same or similar processing procedure to be formed. In certain embodiments, this little first thin film transistor and this little 2nd thin film transistor can be formed in same processing procedure. In certain embodiments, the processing procedure of this little first thin film transistor and this little 2nd thin film transistor and temperature dependence, such as, can be non-crystalline silicon (a-Si) processing procedure, low temperature polycrystalline silicon (LTPS) processing procedure, indium gallium zinc (IGZO) processing procedure etc.And then, owing to the element (such as the 2nd thin film transistor) of temperature sensing circuit 50 has identical or similar processing procedure formation in whole or in part to the element (such as the first thin film transistor) of gate driver circuit 40, and it is all formed in same substrate, therefore, if the element of gate driver circuit 40 produces such as electrically to offset after running, the element of that temperature sensing circuit 50 also can have similar shift phenomenon. Also because of so, the element that the temperature sensing signal TCLK2 that temperature sensing circuit 50 exports may correspond to gate driver circuit 40 electrically offsets and adjusts, and then the out-put supply of control power supply circuit 70, and then more can electrically offset generation compensation effect for the element of gate driver circuit 40 compared to the temperature sensing circuit 50 made with different processing procedure.
In the present embodiment, temperature sensing circuit 50 surveys a sensing temperature (being such as the envrionment temperature of position corresponding to temperature sensing circuit 50 substrate SBT on) in order to sense, and produces temperature sensing signal TCLK2 to processing circuit 60 according to this sensing temperature. In one embodiment, temperature sensing signal TCLK2 is a time domain temperature sensing signal. Process circuit 60 receives temperature sensing signal TCLK2, and in order to the whole voltage bias VB S of at least one style of the rate-adaptive pacemaker according to temperature sensing signal TCLK2 to power supply circuit 70. Power supply circuit 70 is in order to corresponding to the described whole voltage bias VB S of at least one style, it is provided that at least one supply voltage VSP is to gate driver circuit 40.
By above-mentioned setting, the sensing temperature that power supply circuit 70 can sense corresponding to temperature sensing circuit 50, it is provided that supply voltage VSP to gate driver circuit 40, to guarantee the normal operation of gate driver circuit 40 under temperature variation.
, in one embodiment, in addition process circuit 60 more provides control voltage VCT (with reference to Fig. 2) to temperature sensing circuit 50 in order to the frequency according to temperature sensing signal TCLK2, to adjust the frequency of temperature sensing signal TCLK2. Such as, under preset temp, if the frequency of temperature sensing signal TCLK2 is not inconsistent appointment reference frequency, then processes circuit 60 and can change the level of control voltage VCT, with by the frequency correction of temperature sensing signal TCLK2 to specifying reference frequency (as shown in 7A figure).
By operation like this, the frequency of different display unit 10 temperature sensing signal TCLK2 at the same temperature can be calibrated to identical appointment reference frequency when dispatching from the factory, thus avoid difference between sheet.
Hereinafter with reference to the 2nd, 3 figure the detail in some embodiments of this case is provided, so this case is not as limit.
Fig. 2 is the concrete schematic diagram of the temperature sensing circuit 50, process circuit 60 and the related elements thereof that illustrate according to this case one embodiment. Fig. 3 is the coherent signal schematic diagram of the display unit 10 illustrated according to this case one embodiment.
In the present embodiment, temperature sensing circuit 50 comprises vibrator OSC and comparer CMP. Vibrator OSC and comparer CMP electric property coupling each other. In the present embodiment, process circuit 60 comprise except frequency device FDV, counter cnt, transmodulator CVR and search table LT. Except frequency device FDV electric property coupling counter cnt. Counter cnt electric property coupling transmodulator CVR. Transmodulator CVR electric property coupling searches table LT. In one embodiment, process circuit 60 can be digital circuit, and all the other elements in Fig. 2 can be analog circuit element, and so this case is not as limit.
In the present embodiment, vibrator OSC corresponding to sensing temperature (being such as the envrionment temperature of position corresponding to temperature sensing circuit 50 on substrate SBT), and according to this sensing temperature outputting oscillation signal TCLK1 (with reference to Fig. 3) to comparer CMP.Comparer CMP receives oscillation signal TCLK1, and is compared by oscillation signal TCLK1 and reference voltage VREF, to produce temperature sensing signal TCLK2 (with reference to Fig. 3). In one embodiment, temperature sensing signal TCLK2 is roughly square wave. Thus, the oscillation wave of oscillation signal TCLK1 distortion can be transferred to the square wave being easy to identify.
In the present embodiment, comparer CMP surveys signal TCLK2 to process circuit 60 by level translator LSF output temperature sense. In detail, level translator LSF can in order to change the voltage level of temperature sensing signal TCLK2, taking by the voltage level conversion of temperature sensing signal TCLK2 as the process acceptable voltage level of circuit 60, to produce change over signal DCLK (with reference to Fig. 3). It should be noted that in certain embodiments, adaptability omits level translator LSF. That is, comparer CMP directly output temperature sense can survey signal TCLK2 to process circuit 60.
In one embodiment, except device FDV can receive temperature sensing signal TCLK2 (or change over signal DCLK) frequently, and temperature sensing signal TCLK2 or change over signal DCLK is carried out except frequently, to provide the temperature sensing signal TCLK2 (or change over signal DCLK) after except frequency to counter cnt. It should be noted that in the present embodiment, though being described taking the multiplying power frequently of removing except frequency device FDV as 1 times, but this case is not as limit. Other is except frequency multiplying power is also among this case scope. , in certain embodiments, in addition except device FDV also adaptability omission frequently. That is, temperature sensing signal TCLK2 (or change over signal DCLK) can directly be provided to counter cnt, and without except frequently.
In one embodiment, produce circuit ROSC with reference to clock signal can provide with reference to clock signal RCLK (with reference to Fig. 3) to counter cnt. In one embodiment, the frequency of reference clock signal RCLK is greater than the frequency of temperature sensing signal TCLK2 (or change over signal DCLK). In one embodiment, the frequency of reference clock signal RCLK can be greater than 100 times of the frequency of temperature sensing signal TCLK2 (or change over signal DCLK). In one embodiment, the frequency of reference clock signal RCLK can be greater than 10MHz. In one embodiment, the frequency of temperature sensing signal TCLK2 can be less than 100kHz.
In one embodiment, counter cnt can receive the temperature sensing signal TCLK2 (or change over signal DCLK) after except frequency and come from the reference clock signal RCLK producing circuit ROSC with reference to clock signal, and sample except the temperature sensing signal TCLK2 (or change over signal DCLK) after frequency with reference to clock signal RCLK in order to utilize, to obtain many sample trigger signal TRG (with reference to Fig. 3), wherein sample trigger signal TRG such as can be pulse signal.
Citing, when except the temperature sensing signal TCLK2 (or change over signal DCLK) after frequently for high-voltage level and with reference to clock signal RCLK be positive edge trigger time, namely counter cnt produces sample trigger signal TRG.
In one embodiment, transmodulator CVR in order to learn the frequency of the temperature sensing signal TCLK2 (or change over signal DCLK) after except frequency according to sample trigger signal TRG, and in order to table look-up according to the frequency except the temperature sensing signal TCLK2 (or change over signal DCLK) after frequency, with from searching the voltage data DCD (being such as the voltage value of numeral) and temperature data TP that obtain in table LT corresponding to the frequency except the temperature sensing signal TCLK2 (or change over signal DCLK) after frequency.In one embodiment, search table LT and can store the temperature data TP and many voltage data DCD corresponding respectively to different frequencies that many correspond respectively to different frequencies in advance. Wherein, this a little temperature data TP represents the temperature (such as corresponding 25 degrees Celsius of 58kHz, corresponding 50 degrees Celsius of 68.6kHz) of the display unit 10 corresponding to frequency of the temperature sensing signal TCLK2 (or change over signal DCLK) after except frequency, and this little voltage data DCD represents at least one adjustment bias voltage corresponding to frequency of temperature sensing signal TCLK2 (or change over signal DCLK) after except frequency and the information of a control voltage.
In one embodiment, change over signal DCLK and temperature are proportionate (can refer to 8A figure). The number of sample trigger signal TRG and temperature are negative correlation (can refer to 8B figure). For making corresponding relation simplify, search the number of sample trigger signal TRG in table LT and temperature can linearly negative correlation (can refer to 8C figure).
In one embodiment, transmodulator CVR can provide described temperature data TP to display element DS, to make display element DS displays temperature data TP. In addition, in one embodiment, transmodulator CVR can provide described voltage data DCD to digital analog converter DAC (digital analog converter DAC can be integrated in process circuit 60 among, but not as limit). In one embodiment, voltage data DCD is changed by digital analog converter DAC, to produce the whole voltage bias VB S of at least one style to power supply circuit 70, to make power supply circuit 70 export at least one supply voltage VSP according to the whole voltage bias VB S of this at least one style. In addition, in one embodiment, digital analog converter DAC also can produce control voltage VCT to vibrator OSC according to voltage data DCD, to adjust the frequency of oscillation signal TCLK1 and temperature sensing signal TCLK2. Utilize this control voltage VCT, the temperature sensing circuit 50 of different display unit 10 can be made to produce the temperature sensing signal TCLK2 of roughly the same frequency at the same temperature, with poor between correcting sheet.
As shown in Figure 3, utilize above-mentioned setting, the wave of oscillation of oscillation signal TCLK1 can be converted to the square wave of temperature sensing signal TCLK2 or change over signal DCLK. Square wave samples via with reference to clock signal RCLK, can obtain the pulse wave of triggering signal TRG.
Hereinafter with reference to Fig. 4, it is provided that the detail of the temperature sensing circuit 50 in some embodiments of this case, so this case is not as limit.
In the present embodiment, vibrator OSC comprises multiple phase inverter INV and door AND and multiple 2nd thin film transistor TTR. In the present embodiment, this a little phase inverter INV is electrically connected in series each other, with sensing temperature (being such as the envrionment temperature of position corresponding to temperature sensing circuit 50 on substrate SBT) the outputting oscillation signal TCLK1 sensed corresponding to temperature sensing circuit 50.
At the present embodiment, phase inverter INV can realize with aforementioned 2nd thin film transistor. This little 2nd thin film transistor is arranged on substrate SBT. In certain embodiments, this little first thin film transistor and this little 2nd thin film transistor utilize same or similar processing procedure to be formed. In certain embodiments, this little first thin film transistor and this little 2nd thin film transistor can be formed in same processing procedure. In certain embodiments, the processing procedure of this little first thin film transistor and this little 2nd thin film transistor and temperature dependence, such as, can be non-crystalline silicon (a-Si) processing procedure, low temperature polycrystalline silicon (LTPS) processing procedure, indium gallium zinc (IGZO) processing procedure etc.And then, owing to the element all or part of (such as the 2nd thin film transistor) of phase inverter INV has identical or similar processing procedure formation to the element (such as the first thin film transistor) of gate driver circuit 40, and it is all formed in same substrate, therefore, if the element of gate driver circuit 40 produces such as electrically to offset after running, the element of that phase inverter INV also can have similar shift phenomenon. Also because of so, the element that the oscillation signal TCLK1 that temperature sensing circuit 50 exports may correspond to gate driver circuit 40 electrically offsets and adjusts, and control the out-put supply of power supply circuit 70, and then more can electrically offset generation compensation effect for the element of gate driver circuit 40 compared to the temperature sensing circuit 50 made with different processing procedure.
In one embodiment, the output terminal electric property coupling of last step of this phase inverter INV being connected in series a bit and first input terminus of door AND, with the 2nd input terminus electric property coupling enable signal EN of door AND, and the input terminus of the first step with this phase inverter INV being connected in series a bit of the output terminal electric property coupling of door AND. Thus, this phase inverter INV being connected in series a bit can be enabled (enable) or deenergize (disable) according to this enable signal EN.
In one embodiment, respectively electrical coupled in series is aforementioned with door AND and aforementioned phase inverter INV for aforementioned 2nd thin film transistor TTR, and the grid electric property coupling control voltage VCT of this little 2nd thin film transistor TTR, to adjust the frequency of oscillation signal TCLK1 according to control voltage VCT. For example, when control voltage VCT improves, the also corresponding raising of the driving electric current of phase inverter INV, so rises the frequency making oscillation signal TCLK1. On the contrary, when control voltage VCT reduces, the also corresponding reduction of the driving electric current of phase inverter INV, so will make the frequency decrease of oscillation signal TCLK1. The relation of the frequency of control voltage VCT and oscillation signal TCLK1 can refer to 7B figure. By controlling the level of control voltage VCT, difference between the sheet between different display unit 10 can be avoided.
It should be noted that in the present embodiment, though being described for 4 phase inverter INV and 5 the 2nd thin film transistor TTR, but the phase inverter INV of other quantity and the 2nd thin film transistor TTR is also among this case scope.
In the present embodiment, comparer CMP can comprise transistor CTR1-CTR4. Transistor CTR1 and the electrical coupled in series of transistor CTR2. Transistor CTR3 and the electrical coupled in series of transistor CTR4. The gate terminal electric property coupling oscillation signal TCLK1 of transistor CTR1 and transistor CTR3. The node that the gate terminal of transistor CTR4 is electrically coupled between transistor CTR1 and transistor CTR2. Node between transistor CTR3 and transistor CTR4 surveys signal TCLK2 in order to output temperature sense.
By above setting, can make temperature sensing circuit 50 according on substrate SBT corresponding to the envrionment temperature of the position of vibrator OSC, output temperature sense survey signal TCLK2.
Hereinafter with reference to Fig. 5, it is provided that the detail of the power supply circuit 70 in some embodiments of this case, so this case is not as limit.
In the present embodiment, power supply circuit 70 can comprise partial pressure unit DV1-DV3, working cell WK1-WK3, transistor T1-T3, inductance L 1, electric capacity CO1-CO3, charge pump CP1-CP3, diode DN.
In the present embodiment, the gate terminal of the first working cell WK1 electric property coupling transistor T1 and partial pressure unit DV1, and receive with reference to clock signal RCLK.Inductance L 1 is electrically coupled between input voltage VIN and transistor T1. The first end of transistor T1 is by the first end of diode DN electric property coupling electric capacity CO1 and partial pressure unit DV1, and the 2nd end ground connection of transistor T1. Between the supply voltage AVDD that electric capacity CO1 is electrically coupled in aforementioned at least one supply voltage VSP and ground, in order to keep supply voltage AVDD. Charge pump CP1 is the first end of electric property coupling transistor T1, the first end of electric capacity CO1 and the first end of transistor T2 respectively. The first end of charge pump CP2 difference electric property coupling transistor T1, the 2nd end of transistor T2, the first end of partial pressure unit DV2 and electric capacity CO2. Between the supply voltage VGH that electric capacity CO2 is electrically coupled in aforementioned at least one supply voltage VSP and ground, in order to keep supply voltage VGH. The gate terminal of the 2nd working cell WK2 electric property coupling transistor T2 and partial pressure unit DV2. Charge pump CP3 is the first end of electric property coupling transistor T1 and the first end of transistor T3 respectively. The first end of the 2nd end electric property coupling partial pressure unit DV3 and electric capacity CO3 of transistor T3. Between the supply voltage VGL that electric capacity CO3 is electrically coupled in aforementioned at least one supply voltage VSP and ground, in order to keep supply voltage VGL. The gate terminal of the 3rd working cell WK3 electric property coupling transistor T3 and partial pressure unit DV3.
In the present embodiment, partial pressure unit DV1 comprises resistance R1, R2 of electrically coupled in series each other, wherein one end of the other end electric property coupling resistance R2 of one end electric property coupling supply voltage AVDD of resistance R1, resistance R1 and the first working cell WK1, the other end ground connection of resistance R2. Partial pressure unit DV2 comprises each other resistance R3, R4 of electrically coupled in series, wherein one end of the other end electric property coupling resistance R4 of one end electric property coupling supply voltage VGH of resistance R3, resistance R3 and the 2nd working cell WK2, the other end ground connection of resistance R4. Partial pressure unit DV3 comprises each other resistance R5, R6 of electrically coupled in series, wherein one end of the other end electric property coupling resistance R6 of one end electric property coupling supply voltage VGL of resistance R5, resistance R5 and the 3rd working cell WK3, the other end ground connection of resistance R6.
In the present embodiment, charge pump CP1 comprises electric capacity C1 and diode D1, D2. The cathode terminal of one end electric property coupling diode D1 of electric capacity C1 and the positive terminal of diode D2, the first end of the other end electric property coupling transistor T1 of electric capacity C1, the first end of the cathode terminal electric property coupling transistor T2 of the positive terminal electric property coupling supply voltage AVDD of diode D1, diode D2. Charge pump CP2 comprises electric capacity C2 and diode D3, D4. The cathode terminal of one end electric property coupling diode D3 of electric capacity C2 and the positive terminal of diode D4, the first end of the other end electric property coupling transistor T1 of electric capacity C2,2nd end of the positive terminal electric property coupling transistor T2 of diode D3, the cathode terminal electric property coupling supply voltage VGH of diode D4. Charge pump CP3 comprises electric capacity C3 and diode D5, D6. The positive terminal of one end electric property coupling diode D5 of electric capacity C3 and the cathode terminal of diode D6, the first end of the other end electric property coupling transistor T1 of electric capacity C3, the cathode terminal ground connection of diode D5, the first end of the positive terminal electric property coupling transistor T3 of diode D6.
In the present embodiment, resistance R2, R4, R6 is adjustable resistance. Resistance R2, R4, R6 change its resistance value corresponding to VBS1, VBS2, the VBS3 in aforementioned at least one adjustment voltage bias VB S respectively.This area personage is when it will be appreciated that in different embodiments, also can use resistance R1, R3, R5 instead is adjustable resistance, and following examples are by corresponding change.
In the present embodiment, partial pressure unit DV1 is in order to corresponding to adjustment voltage bias VB S1, to carry out dividing potential drop to supply voltage AVDD, to produce feedback voltage V FB1 to the first working cell WK1. First working cell WK1 controls transistor T1 corresponding to feedback voltage V FB1, to adjust supply voltage AVDD.
In the present embodiment, charge pump CP1, CP2 are in order to export supply voltage VGH corresponding to supply voltage AVDD, and charge pump quantity can change according to actual demand (such as can be all one or other quantity). Partial pressure unit DV2 is in order to corresponding to adjustment voltage bias VB S2, to carry out dividing potential drop to supply voltage VGH, to produce feedback voltage V FB2 to the 2nd working cell WK2. 2nd working cell WK2 controls transistor T2 corresponding to feedback voltage V FB2, to adjust supply voltage VGH.
In the present embodiment, charge pump CP3 is in order to corresponding to supply voltage VGL, to export the first end of operating voltage to transistor T3, and charge pump quantity can change according to actual demand (such as can be all one or other quantity). Partial pressure unit DV3 is in order to corresponding to adjustment voltage bias VB S3, to carry out dividing potential drop to supply voltage VGL, to produce feedback voltage V FB3 to the 3rd working cell WK3. Working cell WK3 controls transistor T3 corresponding to feedback voltage V FB3, adjusts supply voltage VGL in order to by the operating voltage from charge pump CP3.
By above-mentioned setting, power supply circuit 70 can corresponding to described adjustment voltage bias VB S1, VBS2, VBS3, it is provided that supply voltage AVDD, VGH, VGL to gate driver circuit 40, to guarantee the normal operation of gate driver circuit 40 under temperature variation.
In addition, owing to supply voltage AVDD, VGH, VGL are the adjustment voltage bias VB S1 according to acquirement of tabling look-up, VBS2, VBS3 generation, therefore the numerical value of supply voltage AVDD, VGH, VGL can freely design on demand, and by other restriction (with reference to Fig. 9).
The schema of the offer method 200 of the supply voltage of gate driver circuit of Fig. 6 for illustrating according to one embodiment of the invention.
It should be noted that the offer method 200 of supply voltage can be applicable to same or similar in the display unit of structure shown in Fig. 1. And for making to describe simply, below will according to one embodiment of the invention, carrying out the offer method 200 to supply voltage for the display unit 10 in Fig. 1 describes, and right the present invention does not apply with this and is limited.
Further, it will be understood that arrive, the step of the offer method 200 of supply voltage mentioned in the present embodiment, except chatting its order person bright especially, all can adjust its tandem according to actual needs, even can perform simultaneously or partly simultaneously.
Moreover, in different embodiments, this little step also increases, replaces and/or omits in adaptability ground.
In the present embodiment, the offer method 200 of the supply voltage of gate driver circuit comprises the following steps.
In step sl, utilizing temperature sensing circuit 50, the sensing temperature that senses corresponding to temperature sensing circuit 50 (being such as the envrionment temperature of position corresponding to temperature sensing circuit 50 on substrate SBT), produces temperature sensing signal TCLK2. The detail of this step with reference to aforementioned paragraphs, can be not repeated herein.
In step s 2, utilization process circuit 60, according at least one adjustment voltage bias VB S of the rate-adaptive pacemaker of temperature sensing signal TCLK2.The detail of this step with reference to aforementioned paragraphs, can be not repeated herein.
In step s3, utilize power supply circuit 70, provide at least one supply voltage VSP to gate driver circuit 40 corresponding to described at least one adjustment voltage bias VB S. The detail of this step with reference to aforementioned paragraphs, can be not repeated herein.
By above-mentioned setting, the sensing temperature that power supply circuit 70 can sense corresponding to temperature sensing circuit 50, it is provided that supply voltage VSP to gate driver circuit 40, to guarantee the normal operation of gate driver circuit 40 under temperature variation.
Figure 10 is the oscillogram illustrated according to the present invention one experimental example. In the present embodiment, waveform W1 represents the waveform of the oscillation signal TCLK1 when-25 degrees Celsius, waveform W2 represents the waveform of the temperature sensing signal TCLK2 when-25 degrees Celsius, waveform W3 represents the waveform of the oscillation signal TCLK1 when+25 degrees Celsius, waveform W4 represents the waveform of the temperature sensing signal TCLK2 when+25 degrees Celsius, waveform W5 represents the waveform of the oscillation signal TCLK1 when+80 degrees Celsius, and waveform W6 represents the waveform of the temperature sensing signal TCLK2 when+80 degrees Celsius.
Figure 11 is the oscillogram illustrated according to the present invention one experimental example. in the present embodiment, waveform V1 represents the waveform of the change over signal DCLK when-25 degrees Celsius, waveform V2 represents the waveform removing the change over signal DCLK after frequently when-25 degrees Celsius, waveform V3 represents the number of the sample trigger signal TRG when-25 degrees Celsius, waveform V4 represents the waveform of the change over signal DCLK when+25 degrees Celsius, waveform V5 represents the waveform removing the change over signal DCLK after frequently when+25 degrees Celsius, waveform V6 represents the number of the sample trigger signal TRG when+25 degrees Celsius, waveform V7 represents the waveform of the change over signal DCLK when+80 degrees Celsius, waveform V8 represents the waveform removing the change over signal DCLK after frequently when+80 degrees Celsius, waveform V9 represents the number of the sample trigger signal TRG when+80 degrees Celsius.
Although the present invention is with embodiment openly as above; so itself and be not used to limit the present invention, any those skilled in the art, without departing from the spirit and scope of the present invention; when doing various variations and retouching, therefore protection scope of the present invention is when being as the criterion depending on accompanying as defined in claim.
Claims (10)
1. a display unit, comprising:
One gate driver circuit, comprises multiple first thin film transistor, and those first thin film transistors are arranged on a substrate;
One temperature sensing circuit, comprises multiple 2nd thin film transistor, and those the 2nd thin film transistors are arranged on this substrate, and this temperature sensing circuit is in order to produce a temperature sensing signal according to a sensing temperature;
One process circuit, this temperature sensing circuit of electric property coupling, in order at least one adjustment bias voltage of the rate-adaptive pacemaker according to this temperature sensing signal; And
One power supply circuit, this process circuit of electric property coupling and this gate driver circuit, in order to provide at least one supply voltage to this gate driver circuit corresponding to this at least one adjustment bias voltage.
2. display unit as claimed in claim 1, wherein this process circuit is tabled look-up in order to the frequency according to this temperature sensing signal, to obtain this at least one adjustment bias voltage.
3. display unit as claimed in claim 1, wherein this process circuit is in order to provide a control voltage according to this temperature sensing signal, and this process circuit is more in order to provide this control voltage to this temperature sensing circuit, and then adjusts the frequency of this temperature sensing signal.
4. display unit as claimed in claim 3, wherein this temperature sensing circuit comprises:
One vibrator, comprises multiple phase inverter, and those phase inverters are connected in series each other, to export an oscillation signal corresponding to this sensing temperature;And
Those the 2nd thin film transistors described, wherein those the 2nd thin film transistor those phase inverters of electrical coupled in series each, in order to adjust the frequency of this oscillation signal according to this control voltage.
5. display unit as claimed in claim 1, wherein this process circuit comprises:
One counter, in order to receive one with reference to clock signal and this temperature sensing signal, and in order to utilize this reference clock signal this temperature sensing signal to be sampled, to obtain many sample trigger signals; And
One transmodulator, in order to learn the frequency of this temperature sensing signal according to those sample trigger signals, and tables look-up in order to the frequency according to this temperature sensing signal, to obtain this at least one adjustment bias voltage of the frequency corresponding to this temperature sensing signal.
6. the display unit as described in as arbitrary in claim 1 to 5, wherein this power supply circuit comprises:
One first partial pressure unit, in order to corresponding to one first adjustment bias voltage in this at least one adjustment bias voltage, to carry out dividing potential drop to one first supply voltage in this at least one supply voltage, to produce one first feedback voltage;
One first crystal pipe, this first partial pressure unit of electric property coupling; And
One first working cell, this first crystal pipe of electric property coupling and this first partial pressure unit, in order to corresponding to this first feedback voltage, to control this first crystal pipe, to adjust this first supply voltage.
7. display unit as claimed in claim 6, wherein this first partial pressure unit also comprises an adjustable resistance, and this first adjustment bias voltage is in order to adjust a resistance value of this adjustable resistance.
8. display unit as claimed in claim 6, wherein this power supply circuit also comprises:
One two-transistor;
At least one charge pump, this two-transistor of electric property coupling, this at least one charge pump is in order to corresponding to this first supply voltage, to export one the 2nd supply voltage in this at least one supply voltage;
One the 2nd partial pressure unit, electric property coupling is in order to export one the 2nd supply voltage output terminal of the 2nd supply voltage, in order to corresponding to one the 2nd adjustment bias voltage in this at least one adjustment bias voltage, the 2nd supply voltage is carried out dividing potential drop, to produce one the 2nd feedback voltage; And
One the 2nd working cell, electric property coupling the 2nd partial pressure unit and this two-transistor, the 2nd working cell in order to corresponding to the 2nd feedback voltage, to control this two-transistor, to adjust the 2nd supply voltage.
9. an offer method for the supply voltage of gate driver circuit, comprising:
Utilize a temperature sensing circuit, produce a temperature sensing signal corresponding to a sensing temperature;
At least one adjustment bias voltage of rate-adaptive pacemaker according to this temperature sensing signal; And
At least one supply voltage to gate driver circuit is provided corresponding to this at least one adjustment bias voltage;
Wherein this gate driver circuit comprises multiple first thin film transistor, this temperature sensing circuit, comprises multiple 2nd thin film transistor, and those first thin film transistors and those the 2nd thin film transistors are arranged on same substrate.
10. method is provided as claimed in claim 9, also comprises:
A control voltage is provided according to this temperature sensing signal; And
There is provided this control voltage to this temperature sensing circuit, to adjust the frequency of this temperature sensing signal.
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| Application Number | Priority Date | Filing Date | Title |
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| TW105103158A TWI575491B (en) | 2016-02-01 | 2016-02-01 | Display device and providing method for supply voltage of gate driving circuit |
| TW105103158 | 2016-02-01 |
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| CN105679227A true CN105679227A (en) | 2016-06-15 |
| CN105679227B CN105679227B (en) | 2018-07-17 |
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| CN201610223558.5A Active CN105679227B (en) | 2016-02-01 | 2016-04-12 | Display device and method for providing supply voltage of grid drive circuit |
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| CN (1) | CN105679227B (en) |
| TW (1) | TWI575491B (en) |
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| CN110021274A (en) * | 2019-04-30 | 2019-07-16 | 深圳市华星光电技术有限公司 | Display panel driving system and displaying panel driving method |
| CN110444162A (en) * | 2019-07-18 | 2019-11-12 | 武汉华星光电半导体显示技术有限公司 | Display device and power management chip for display device |
| CN114187875A (en) * | 2021-11-25 | 2022-03-15 | 绵阳惠科光电科技有限公司 | Voltage adjusting circuit and method and display device |
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| KR20210082904A (en) * | 2019-12-26 | 2021-07-06 | 엘지디스플레이 주식회사 | Gate driving circuit and display device using the same |
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| CN110021274A (en) * | 2019-04-30 | 2019-07-16 | 深圳市华星光电技术有限公司 | Display panel driving system and displaying panel driving method |
| CN110021274B (en) * | 2019-04-30 | 2021-03-23 | Tcl华星光电技术有限公司 | Display panel driving system and display panel driving method |
| CN110444162A (en) * | 2019-07-18 | 2019-11-12 | 武汉华星光电半导体显示技术有限公司 | Display device and power management chip for display device |
| CN114187875A (en) * | 2021-11-25 | 2022-03-15 | 绵阳惠科光电科技有限公司 | Voltage adjusting circuit and method and display device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105679227B (en) | 2018-07-17 |
| TWI575491B (en) | 2017-03-21 |
| TW201729169A (en) | 2017-08-16 |
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