CN105656462B - A kind of comparator circuit with clamp function - Google Patents
A kind of comparator circuit with clamp function Download PDFInfo
- Publication number
- CN105656462B CN105656462B CN201511014114.2A CN201511014114A CN105656462B CN 105656462 B CN105656462 B CN 105656462B CN 201511014114 A CN201511014114 A CN 201511014114A CN 105656462 B CN105656462 B CN 105656462B
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- Prior art keywords
- comparator
- voltage
- source electrode
- circuit
- nmos tube
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/22—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral
Abstract
The invention discloses a kind of circuit, a kind of specific comparator circuit with clamp function, including NMOS tube, PMOS tube and comparator, the source electrode and substrate of the NMOS tube are shorted together, and drain electrode is connected with power supply；The source electrode and substrate of the PMOS tube are shorted together, and drain electrode is connected to the ground；One input terminal of the comparator connects the source electrode of the NMOS tube and PMOS tube, which simultaneously connects input voltage by resistance；Another input terminal of the comparator connects reference voltage；The output end of the comparator is connected with external circuit.Circuit structure of the invention is not only avoided to the higher requirement of reference voltage driving capability, and can be efficiently against inclined lining effect, and voltage application range is wider.
Description
Technical field
The present invention relates to a kind of circuits, and in particular to a kind of comparator circuit with clamp function.
Background technique
In some Electric Drive Systems, control circuit needs to use external signal to make correct judgement, such as phase
Position detection, zero passage detection etc. generally use comparator in zero cross detection circuit as the technical solution of detection.Again because of inspection
Slowdown monitoring circuit is integrated circuit, and the pressure resistance of itself is limited, and the fluctuation range of external input signal may exceed the pressure resistance of circuit
Range damages circuit, therefore usually in the position of input signal setting clamp circuit to protect.
There are two types of the modes of common clamp circuit, as follows respectively:
(1) the first is clamping diode circuit, and as shown in Fig. 1, which is made of diode and comparator, is compared
The normal phase input end (or negative-phase input) of device is by resistance connection input voltage (Vi1), and the negative-phase input of comparator is (or just
Phase input terminal) connection reference voltage (VF1).The clamp circuit is using the forward conduction characteristic of two diodes (D1, D2) to defeated
Enter to hold t1 point to be clamped；When the decline of t1 point current potential, because of the clamping action of diode (D1), the circuit of t1 point can only be dropped to
Near the voltage value of a PN junction conduction voltage drop (Vpn) lower than reference voltage (VF1), i.e. VF1-Vpn；Conversely, working as t1 point voltage
When raising, by diode D2 clamp near VF1+Vpn.Therefore the current potential of t1 point is clamped at VF1-Vpn~VF1+Vpn range
Between.The shortcomings that circuit structure is: VF1 needs enough load capacities, prevents from leading to VF1 certainly because of driving capability deficiency
Body voltage deviation, loses clamping action.The enhancing of VF1 driving capability needs to increase the area of corresponding circuits, is unfavorable for integrated set
Meter.
(2) second be metal-oxide-semiconductor clamp circuit, as shown in Fig. 2, which is made of metal-oxide-semiconductor and comparator.The circuit
In PMOS tube grounded drain (GND), substrate meets power supply (VDD_5V), and the source electrode of PMOS tube is connected with the source electrode of NMOS tube
It is connected to an input terminal of comparator simultaneously, the leakage termination power (VDD_5V) of NMOS tube, substrate electric potential is GND；Two
The grid of metal-oxide-semiconductor links together to be connected with reference voltage (VF2).The structure utilizes the opening feature of PMOS tube and NMOS tube
(assuming that the cut-in voltage of PMOS tube is Vthp, the cut-in voltage of NMOS tube is Vthn), the voltage of input terminal t2 point is limited in
Between VF2-Vthn~VF2+Vthp, while the defect of circuit structure shown in attached drawing 1 is avoided, to reference voltage (VF2)
Load capacity is of less demanding.But the shortcomings that structure, is: because of the difference bring of the underlayer voltage of metal-oxide-semiconductor and source voltage terminal lining
Inclined effect will keep the cut-in voltage value variation range of MOS larger, and applied voltage is limited in scope.
Summary of the invention
It is a kind of with clamp function the object of the invention is to propose to overcome the defects of existing background technique
Comparator circuit, which not only avoids to the higher requirement of reference voltage driving capability, and can overcome body bias effect
Influence to cut-in voltage.
In order to solve the above-mentioned technical problem, the technical scheme adopted by the invention is that: a kind of comparison with clamp function
Device circuit, including NMOS tube, PMOS tube and comparator, it is characterized in that: the source electrode and substrate of the NMOS tube are shorted together,
Drain electrode is connected with power supply (VCC)；The source electrode and substrate of the PMOS tube are shorted together, and drain electrode is connected to the ground；The comparison
An input terminal (normal phase input end or negative-phase input) for device connects the source electrode of the NMOS tube and PMOS tube, which simultaneously passes through
Cross resistance connection input voltage (Vi3)；Another input terminal (negative-phase input or normal phase input end) of the comparator connects
Reference voltage (VF3)；The output end (VO) of the comparator is connected with external circuit.
Preferred: the normal phase input end of the comparator connects the source electrode of the NMOS tube and PMOS tube, and the input terminal is simultaneously
Input voltage (Vi3) is connected by resistance, negative-phase input connects reference voltage (VF3).
Another preferred: the negative-phase input of the comparator connects the source electrode of the NMOS tube and PMOS tube, the input
Resistance connection input voltage (Vi3) is held and passes through, normal phase input end connects reference voltage (VF3).
The beneficial effects of the present invention are: being shorted together the source electrode of metal-oxide-semiconductor and substrate in circuit structure of the invention, make
It is identical with source potential to obtain substrate electric potential, so as to avoid the generation of body bias effect；Simultaneously as the underlayer voltage of PMOS tube is only
VCC is stood on, therefore the voltage of VCC is no longer limited to low pressure applications, high voltage power supply can be used, voltage application range is very wide.
In addition, structure of the invention also has the advantage in attached drawing 2, it is of less demanding to the load capacity of reference voltage.
Detailed description of the invention
Fig. 1, the schematic diagram of existing clamping diode circuit；
Fig. 2, the schematic diagram of existing metal-oxide-semiconductor clamp circuit；
Fig. 3, circuit diagram of the invention.
Specific embodiment
Scheme is described in further detail the working principle of the invention with reference to the accompanying drawing and preferably.
As shown in figure 3, being circuit diagram of the invention, specifically a kind of comparator circuit with clamp function should
Circuit includes NMOS tube, PMOS tube and comparator, and the source electrode and substrate of the NMOS tube are shorted together, drain electrode and power supply
(VCC) it is connected；The source electrode and substrate of the PMOS tube are shorted together, and drain electrode is connected to the ground；One input of the comparator
(normal phase input end or negative-phase input) is held to connect the source electrode of the NMOS tube and PMOS tube, which simultaneously connects by resistance
Input voltage (Vi3)；Another input terminal (negative-phase input or normal phase input end) of the comparator connects reference voltage
(VF3)；The output end (VO) of the comparator is connected with external circuit.
Embodiment one: the normal phase input end of the comparator in the present embodiment connects the source electrode of the NMOS tube and PMOS tube,
The input terminal simultaneously connects input voltage (Vi3) by resistance, and negative-phase input connects reference voltage (VF3), it is assumed that PMOS tube
Cut-in voltage be Vthp, the cut-in voltage of NMOS tube is Vthn, then the voltage of input terminal t3 point is limited in (VF3-
Vthn in) ~ (VF3+Vthn) voltage range, guarantee is not influenced by body bias effect.
Embodiment two: the negative-phase input of the comparator in the present embodiment connects the source electrode of the NMOS tube and PMOS tube,
The input terminal simultaneously connects input voltage (Vi3) by resistance, and normal phase input end connects reference voltage (VF3), it is assumed that PMOS tube
Cut-in voltage be Vthp, the cut-in voltage of NMOS tube is Vthn, then the voltage of input terminal t3 point is limited in (VF3-
Vthn in) ~ (VF3+Vthn) voltage range, guarantee is not influenced by body bias effect.
The present invention is a kind of novel comparator circuit with clamp function, which not only avoids to reference voltage
The higher requirement of driving capability, and body bias effect is effectively overcome, voltage application range is wider.
Claims (3)
1. a kind of comparator circuit with clamp function, including NMOS tube, PMOS tube and comparator, it is characterized in that: described
The source electrode and substrate of NMOS tube are shorted together, and drain electrode is connected with power supply；The source electrode and substrate of the PMOS tube are shorted one
It rises, drain electrode is connected to the ground；One input terminal of the comparator connects the source electrode of the NMOS tube and PMOS tube, and the input terminal is simultaneously
Input voltage is connected by resistance；Another input terminal of the comparator connects reference voltage, which is also connected with described
The grid of NMOS tube and PMOS tube；The output end of the comparator is connected with external circuit.
2. the comparator circuit according to claim 1 with clamp function a, it is characterized in that: input of the comparator
End is normal phase input end, and the normal phase input end connects the source electrode of the NMOS tube and PMOS tube, which simultaneously passes through resistance
Connect input voltage；Another input terminal of the comparator is negative-phase input, and the negative-phase input connects reference voltage.
3. the comparator circuit according to claim 1 with clamp function a, it is characterized in that: input of the comparator
End is negative-phase input, and the negative-phase input connects the source electrode of the NMOS tube and PMOS tube, which simultaneously passes through resistance
Connect input voltage；Another input terminal of the comparator is normal phase input end, and the normal phase input end connects reference voltage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201511014114.2A CN105656462B (en) | 2015-12-31 | 2015-12-31 | A kind of comparator circuit with clamp function |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201511014114.2A CN105656462B (en) | 2015-12-31 | 2015-12-31 | A kind of comparator circuit with clamp function |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105656462A CN105656462A (en) | 2016-06-08 |
| CN105656462B true CN105656462B (en) | 2019-01-08 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201511014114.2A Active CN105656462B (en) | 2015-12-31 | 2015-12-31 | A kind of comparator circuit with clamp function |
Country Status (1)
| Country | Link |
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| CN (1) | CN105656462B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5973561A (en) * | 1997-06-03 | 1999-10-26 | Texas Instruments Incorporated | Differential clamp for amplifier circuits |
| US20050002250A1 (en) * | 2002-11-12 | 2005-01-06 | Gans Dean D. | Method and apparatus for amplifying a regulated differential signal to a higher voltage |
| CN103944545A (en) * | 2013-11-26 | 2014-07-23 | 苏州贝克微电子有限公司 | Power switch with internal current-limiting circuit |
| CN205320050U (en) * | 2015-12-31 | 2016-06-15 | 无锡华润矽科微电子有限公司 | Comparator circuit with clamp function |
-
2015
- 2015-12-31 CN CN201511014114.2A patent/CN105656462B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5973561A (en) * | 1997-06-03 | 1999-10-26 | Texas Instruments Incorporated | Differential clamp for amplifier circuits |
| US20050002250A1 (en) * | 2002-11-12 | 2005-01-06 | Gans Dean D. | Method and apparatus for amplifying a regulated differential signal to a higher voltage |
| CN103944545A (en) * | 2013-11-26 | 2014-07-23 | 苏州贝克微电子有限公司 | Power switch with internal current-limiting circuit |
| CN205320050U (en) * | 2015-12-31 | 2016-06-15 | 无锡华润矽科微电子有限公司 | Comparator circuit with clamp function |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105656462A (en) | 2016-06-08 |
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Address after: 214135 -6, Linghu Avenue, Wuxi Taihu international science and Technology Park, Wuxi, Jiangsu, China, 180 Patentee after: China Resources micro integrated circuit (Wuxi) Co., Ltd Address before: 214135 Jiangsu city of Wuxi province Wuxi Linghu Taihu International Science Park Road No. 180 -22 Patentee before: WUXI CHINA RESOURCES SEMICO Co.,Ltd. |
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