CN105655443A - Method for enhancing solar cell efficiency based on light induced field inductive effect - Google Patents
Method for enhancing solar cell efficiency based on light induced field inductive effect Download PDFInfo
- Publication number
- CN105655443A CN105655443A CN201610111226.8A CN201610111226A CN105655443A CN 105655443 A CN105655443 A CN 105655443A CN 201610111226 A CN201610111226 A CN 201610111226A CN 105655443 A CN105655443 A CN 105655443A
- Authority
- CN
- China
- Prior art keywords
- pbch
- solar battery
- field induced
- photic
- battery efficiency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 48
- 230000002708 enhancing effect Effects 0.000 title abstract 2
- 230000001939 inductive effect Effects 0.000 title 1
- 239000000463 material Substances 0.000 claims abstract description 27
- 230000000694 effects Effects 0.000 claims abstract description 26
- 239000002105 nanoparticle Substances 0.000 claims abstract description 8
- 239000004065 semiconductor Substances 0.000 claims abstract description 6
- 230000004048 modification Effects 0.000 claims abstract description 5
- 238000012986 modification Methods 0.000 claims abstract description 5
- 239000010408 film Substances 0.000 claims description 21
- 239000012528 membrane Substances 0.000 claims description 13
- -1 (3, 4-ethylenedioxythiophene)-Polyethylene Chemical group 0.000 claims description 12
- 229910017852 NH2NH2 Inorganic materials 0.000 claims description 12
- 210000004027 cell Anatomy 0.000 claims description 12
- 230000008569 process Effects 0.000 claims description 10
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 8
- 238000002360 preparation method Methods 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 238000005728 strengthening Methods 0.000 claims description 8
- GKWLILHTTGWKLQ-UHFFFAOYSA-N 2,3-dihydrothieno[3,4-b][1,4]dioxine Chemical compound O1CCOC2=CSC=C21 GKWLILHTTGWKLQ-UHFFFAOYSA-N 0.000 claims description 7
- 238000004528 spin coating Methods 0.000 claims description 7
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 5
- 238000000137 annealing Methods 0.000 claims description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000011787 zinc oxide Substances 0.000 claims description 4
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 3
- QENGPZGAWFQWCZ-UHFFFAOYSA-N 3-Methylthiophene Chemical compound CC=1C=CSC=1 QENGPZGAWFQWCZ-UHFFFAOYSA-N 0.000 claims description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 2
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims description 2
- 239000002202 Polyethylene glycol Substances 0.000 claims description 2
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 claims description 2
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 2
- 230000008859 change Effects 0.000 claims description 2
- 229910052731 fluorine Inorganic materials 0.000 claims description 2
- 239000011737 fluorine Substances 0.000 claims description 2
- 229920002521 macromolecule Polymers 0.000 claims description 2
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 2
- 238000001020 plasma etching Methods 0.000 claims description 2
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 claims description 2
- 229920001197 polyacetylene Polymers 0.000 claims description 2
- 229920000767 polyaniline Polymers 0.000 claims description 2
- 229920001223 polyethylene glycol Polymers 0.000 claims description 2
- 229920001451 polypropylene glycol Polymers 0.000 claims description 2
- 229920000128 polypyrrole Polymers 0.000 claims description 2
- 238000002207 thermal evaporation Methods 0.000 claims description 2
- 230000005684 electric field Effects 0.000 abstract description 8
- 230000010287 polarization Effects 0.000 abstract description 7
- 238000005516 engineering process Methods 0.000 abstract description 4
- 230000005669 field effect Effects 0.000 abstract description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 230000004298 light response Effects 0.000 abstract 2
- 238000005260 corrosion Methods 0.000 abstract 1
- 230000007797 corrosion Effects 0.000 abstract 1
- 238000007781 pre-processing Methods 0.000 abstract 1
- 239000002096 quantum dot Substances 0.000 description 12
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- 229910021389 graphene Inorganic materials 0.000 description 7
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000000725 suspension Substances 0.000 description 6
- 238000012360 testing method Methods 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 230000009102 absorption Effects 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 3
- 239000004926 polymethyl methacrylate Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 229910021642 ultra pure water Inorganic materials 0.000 description 3
- 239000012498 ultrapure water Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 2
- 229910052794 bromium Inorganic materials 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- ZASWJUOMEGBQCQ-UHFFFAOYSA-L dibromolead Chemical compound Br[Pb]Br ZASWJUOMEGBQCQ-UHFFFAOYSA-L 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000006385 ozonation reaction Methods 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 1
- VMKOFRJSULQZRM-UHFFFAOYSA-N 1-bromooctane Chemical compound CCCCCCCCBr VMKOFRJSULQZRM-UHFFFAOYSA-N 0.000 description 1
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 1
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- 239000005642 Oleic acid Substances 0.000 description 1
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 1
- UWHZIFQPPBDJPM-FPLPWBNLSA-M Vaccenic acid Natural products CCCCCC\C=C/CCCCCCCCCC([O-])=O UWHZIFQPPBDJPM-FPLPWBNLSA-M 0.000 description 1
- 235000021322 Vaccenic acid Nutrition 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 238000000637 aluminium metallisation Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000013083 solar photovoltaic technology Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- UWHZIFQPPBDJPM-BQYQJAHWSA-N trans-vaccenic acid Chemical compound CCCCCC\C=C\CCCCCCCCCC(O)=O UWHZIFQPPBDJPM-BQYQJAHWSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention belongs to the technical field of solar energy photoelectric conversion, and particularly relates to a method for enhancing the solar cell efficiency based on a field effect caused by light induced polarization. The method comprises the following steps that 1, the surface of a solar cell is preprocessed, the surface energy of the solar cell is changed, and the preprocessing method comprises any one step of ultraviolet-ozone, plasma corrosion and surface molecular bond modification; 2, according to a film forming technology, a functional film with the light induced polarization effect is prepared on the surface of the solar cell, the functional film comprises a light response layer and a light conductive film layer, the light response layer is made of perovskite nano-particles, and the electric conductive film layer is made of organic conjugated molecules or inorganic semiconductor materials; 3, the cell is packaged so as to protect the functional film. According to the method, the light induced polarization material is utilized, some light with the short wavelength is converted into an electric field, and the electric field acts on the cell so as to enhance the efficiency of the solar cell.
Description
Technical field
The invention belongs to solar photoelectric transformation technology field, particularly relate to a kind of field effect caused by photic polarization method to strengthen solar battery efficiency.
Background technology
It is fast-developing that the energy and environmental problem severely impact society day by day. Research and application to clean reproducible energy have caused social extensive concern. Solar-photovoltaic technology is the acquisition mode of the Novel clean regenerative resource enjoying everybody to pay close attention at present. At present, solaode has been widely used for space Generate, Generation, Generator overhead utility and distributed civilian power generation. But, the photoelectric transformation efficiency of solaode is high not enough, particularly utilizing of short-wavelength light is existed very big waste. For by the short wavelength photons of semiconductor absorber, it is all converted into heat energy more than the energy of quasiconductor band gap in the way of relaxation, and this not only causes energy loss but also increases the operating temperature of battery and then reduce the conversion efficiency of photovoltaic cell.
In order to more efficiently utilize the sunlight of sunlight, particularly short wavelength, some spectrum transition materials and many exciton absorptions material are developed and apply. But, these materials there are disadvantages that self. Needing to use rare earth metal in such as material, absorption cross-section is too little causes that efficiency is too low, and the improved efficiency of solaode is inconspicuous, and these weak points will greatly limit it and widely use.
Driving the existing proposition of battery operated idea by extra electric field, main method is by preparing one layer of insulating material on the semiconductor, then makes transparency conducting layer, forms the field effect battery of nesa coating transparent insulating layer semiconductor structure. But this battery needs to make transparent insulating layer, technics comparing is complicated; The most important thing is this battery operated time need extra power supply energy supply, be not suitable for extensive power generation applications.
Because above-mentioned defect, the design people, actively in addition research and innovation, to founding a kind of method strengthening solar battery efficiency based on photic field induced effect so that it is have more the value in industry.
Summary of the invention
For solving above-mentioned technical problem, it is an object of the invention to provide a kind of method strengthening solar battery efficiency based on photic field induced effect, the method utilizes a kind of photic polarization material, the light of part short wavelength is converted into electric field, this electric field action, on battery, strengthens the efficiency of solaode.
A kind of method strengthening solar battery efficiency based on photic field induced effect that the present invention proposes, comprises the following steps:
(1) solar cell surface being carried out pretreatment, change its surface energy, preprocess method includes any one in UV-ozone, plasma etching, modification of surfaces molecular link;
(2) film-forming process is passed through, there is the function film of photic polarity effect in solar cell surface preparation, described function film includes photoresponsive layer and conductive membrane layer, the material of photoresponsive layer is perovskite nano-particle, and the material of conductive membrane layer is organic conjugated molecule or inorganic semiconductor material;
(3) battery is packaged, with defencive function thin film.
Further, the material of described photoresponsive layer includes PbCH3NH2I3, PbCH3NH2Br3, PbCH3NH2Cl3, PbCH3NH2Br3I3-x, PbCH3NH2Cl3I3-x, PbCH3NH2Br3Cl3-x, SnCH3NH2I3, SnCH3NH2Br3, SnCH3NH2Cl3, SnCH3NH2Br3I3-x, SnCH3NH2Cl3I3-x, SnCH3NH2Br3Cl3-x, PbCH2NH2NH2I3, PbCH2NH2NH2Br3, PbCH2NH2NH2Cl3, PbCH2NH2NH2Br3I3-x, PbCH2NH2NH2Cl3I3-x, PbCH2NH2NH2Br3Cl3-xIn any one or multiple.
Further, the material of described photoresponsive layer is PbCH3NH2Br3��
Further, the material of described conductive membrane layer includes gathering (3, 4-ethylenedioxythiophene), (3, 4-ethylenedioxythiophene)-poly-(styrene sulfonic acid), (3, 4-ethylenedioxythiophene)-Polyethylene Glycol, poly-3-hexyl thiophene, poly-3 methyl thiophene, polypyrrole, polyaniline, polyacetylene, p-phenylene vinylene, poly(ethylene oxide), in poly(propylene oxide) any one or multiple, auto-dope or plain macromolecular compound, or tin indium oxide, Indium sesquioxide. antimony, the zinc oxide of adulterated al, magnesium-doped zinc oxide, in the stibium oxide of doped with fluorine any one or multiple.
Further, the material of described conductive membrane layer is (3,4-ethylenedioxythiophene)-poly-(styrene sulfonic acid).
Further, in described step (2), film-forming process includes any one in thermal evaporation, spin-coating method, magnetron sputtering method.
Further, in described step (2), after film-forming process, also include annealing process.
Further, in described step (2), the thickness of function film is Nano grade.
Further, described solaode includes any one in Si based solar battery, III-V race's solaode and organic solar batteries.
Further, described solaode is organic-silicon heterogenous photovoltaic cell.
By such scheme, the present invention at least has the advantage that the present invention passes through the function film in solar cell surface preparation with photic polarity effect, the light of part short wavelength is converted into electric field, this electric field action is on battery, strengthen the efficiency of solaode, technique is simple, and electric field that need not be extra.
Described above is only the general introduction of technical solution of the present invention, in order to better understand the technological means of the present invention, and can be practiced according to the content of description, below with presently preferred embodiments of the present invention and coordinate accompanying drawing describe in detail as after.
Accompanying drawing explanation
Fig. 1 is the structural representation of solaode in the present invention;
Fig. 2 is CH in the embodiment of the present invention 13NH3PbBr3The high resolution transmission electron microscope figure of quantum dot;
Fig. 3 is CH in the embodiment of the present invention 13NH3PbBr3The fluorogram of quantum dot;
Fig. 4 is CH in the embodiment of the present invention 13NH3PbBr3The fluorogram of quantum dot;
Fig. 5 is the i-v curve of solaode in embodiment 2 in the present invention;
Fig. 6 is the i-v curve of solaode in embodiment 2 in the present invention.
Detailed description of the invention
Below in conjunction with drawings and Examples, the specific embodiment of the present invention is described in further detail. Following example are used for illustrating the present invention, but are not limited to the scope of the present invention.
Embodiment 1
Referring to Fig. 1, in the present invention, the structure of solaode includes encapsulated layer 1, metal gate electrode 2, function film layer 3, battery main body are n-type monocrystal silicon 4.
The method strengthening solar battery efficiency based on photic field induced effect that the present invention proposes, comprises the following steps:
(1) on n-type monocrystal silicon, prepare p-type thin layer by the mode of ion implanting, form pn-junction. Injection ion is boron.
(2) solar cell surface carrying out ultraviolet radiation and ozonization, changing its surface can;
(3) by the method for solution spin coating, having the function film of photic polarity effect in solar cell surface preparation, described function film includes photoresponsive layer and conductive membrane layer, and the material of photoresponsive layer is CH3NH3PbBr3Quantum dot, the material of conductive membrane layer is tin indium oxide (ITO);
(4) battery is packaged, with defencive function thin film.
CH3NH3PbBr3The preparation method of quantum dot is as follows:
First, the vaccenic acid of 2mL is mixed with the oleic acid of 0.3mmol, lower stirring 30 minutes at the temperature of 80 DEG C. Then, in the protection of inert atmosphere, the octyl bromide of 0.06mmol being mixed solution, continuing stirring until obtaining uniform suspension. In advance bromine first ammonium and lead bromide are dissolved in dimethylformamide (DMF) with the concentration of 1mol/L respectively. Then the bromine first ammonium of 100 �� L and the lead bromide solution of 100 �� L are sequentially added in suspension respectively. By additionally adding a small amount of acetone, obtain yellow suspension. Obtain nanoparticle finally by centrifuged suspension, and wash twice with acetone, be finally scattered in toluene.
By the nano-particle that said method synthesizes, its high resolution transmission electron microscope (HRTEM) photo is as in figure 2 it is shown, it appeared that this diameter of nano particles is about 10nm from Fig. 2. The fluorescent line of this nano-particle is as shown in Figure 3,4, it absorbs peak position at 535nm, thus short-wavelength light is had good absorption by this quantum dot, by very strong fluorescent emission collection of illustrative plates, we can see that this quantum dot quality is fine, the nano-particle of this high-quality, shortwave sensitivity is used for making function film layer, it is possible to obtain good effect, such as improve the open-circuit voltage of solaode, or as fill factor, curve factor etc.
Embodiment 2
Referring to Fig. 1, in the present invention, the structure of solaode includes encapsulated layer 1, metal gate electrode 2, function film layer 3, battery main body 4, and battery main body 4 is hybrid inorganic-organic solaode.
The method strengthening solar battery efficiency based on photic field induced effect that the present invention proposes, comprises the following steps:
(1) solar cell surface carrying out ultraviolet radiation and ozonization, changing its surface can;
(2) by the mode film forming of spin coating, having the function film of photic polarity effect in solar cell surface preparation, described function film includes photoresponsive layer and conductive membrane layer, and the material of photoresponsive layer is CH3NH3PbBr3Quantum dot, the material of conductive membrane layer is (3,4-ethylenedioxythiophene)-poly-(styrene sulfonic acid);
(3) battery is packaged, with defencive function thin film.
CH3NH3PbBr3The preparation method of quantum dot is identical with embodiment 1. Spin coating CH on hybrid inorganic-organic solaode3NH3PbBr3Quantum dot suspension, its spin coating rotating speed is generally 2000-7000rm according to the concentration of suspension, and makes annealing treatment, and annealing temperature is 100 DEG C. The thickness of quantum dot institute film forming is 10-20nm. Finally battery being packaged, encapsulated layer material is polymethyl methacrylate. By testing it was found that along with the increase of test light application time, the i-v curve of battery is gradually converted into normal shape (as shown in Figure 5) by " S " type. This is the direct embodiment of photoinduction field effect. Through the test of about 30 minutes, battery efficiency reached optimal value. Fig. 6 is the solaode i-v curve figure with or without photic polarization layer, and from figure, we can find clearly, and the battery efficiency adding photic polarization layer is significantly improved.
Embodiment 3
Referring to Fig. 1, in the present invention, the structure of solaode includes encapsulated layer 1, metal gate electrode 2, function film layer 3, battery main body 4, and battery main body 4 is Graphene-monocrystal silicon schottky junction solaode.
The method strengthening solar battery efficiency based on photic field induced effect that the present invention proposes, comprises the following steps:
(1) monocrystal silicon is carried out. First be by with acetone, ethanol and ultra-pure water successively to silicon chip supersound process 15 minutes; Followed by hydrofluoric acid dips ten minutes, and clean with ultra-pure water.
(2) transfer Graphene. Graphene can have chemical vapour deposition technique to prepare on Copper Foil, and transfer method can be wet method or dry method. Here we are further elaborated with for example in a wet process. First one layer of PMMA of spin coating on the Graphene prepared, thickness is about 100 nanometers; Etch away Copper Foil followed by ferric chloride aqueous solutions (30%), and transfer in ultra-pure water standby; Then in water, pull Graphene out with silicon chip, at room temperature dried; Finally remove the PMMA on Graphene with acetone.
(3) prepared by electrode. At front gold evaporation electrode, back side AM aluminum metallization electrode.
(4) prepared by the function film layer of photic polarity effect. Preparing the function film with photic polarity effect by being spin-coated on Graphene, function film includes photoresponsive layer and conductive membrane layer, and photoresponsive layer material is CH3NH3PbBr3Quantum dot (its preparation method is identical with example 1); Conductive film is Graphene.
(5) battery is packaged, with defencive function thin film.
When testing battery efficiency, we are it can be found that along with the increase of sunlight time, the voltage of battery has significant raising, brings up to 0.52V from 0.40V; Fill factor, curve factor also obtains certain raising. Along with the prolongation of light application time, battery efficiency gradually steps up and tends to saturated.
The above is only the preferred embodiment of the present invention; it is not limited to the present invention; should be understood that; for those skilled in the art; under the premise without departing from the technology of the present invention principle; can also making some improvement and modification, these improve and modification also should be regarded as protection scope of the present invention.
Claims (10)
1. the method strengthening solar battery efficiency based on photic field induced effect, it is characterised in that: comprise the following steps:
(1) solar cell surface being carried out pretreatment, change its surface energy, preprocess method includes any one in UV-ozone, plasma etching, modification of surfaces molecular link;
(2) film-forming process is passed through, there is the function film of photic polarity effect in solar cell surface preparation, described function film includes photoresponsive layer and conductive membrane layer, the material of photoresponsive layer is perovskite nano-particle, and the material of conductive membrane layer is organic conjugated molecule or inorganic semiconductor material;
(3) battery is packaged, with defencive function thin film.
2. the method that photic field induced effect according to claim 1 strengthens solar battery efficiency, it is characterised in that: the material of described photoresponsive layer includes PbCH3NH2I3, PbCH3NH2Br3, PbCH3NH2Cl3, PbCH3NH2Br3I3-x, PbCH3NH2Cl3I3-x, PbCH3NH2Br3Cl3-x, SnCH3NH2I3, SnCH3NH2Br3, SnCH3NH2Cl3, SnCH3NH2Br3I3-x, SnCH3NH2Cl3I3-x, SnCH3NH2Br3Cl3-x, PbCH2NH2NH2I3, PbCH2NH2NH2Br3, PbCH2NH2NH2Cl3, PbCH2NH2NH2Br3I3-x, PbCH2NH2NH2Cl3I3-x, PbCH2NH2NH2Br3Cl3-xIn any one or multiple.
3. the method that photic field induced effect according to claim 2 strengthens solar battery efficiency, it is characterised in that: the material of described photoresponsive layer is PbCH3NH2Br3��
4. the method that photic field induced effect according to claim 1 strengthens solar battery efficiency, it is characterized in that: the material of described conductive membrane layer includes gathering (3, 4-ethylenedioxythiophene), (3, 4-ethylenedioxythiophene)-poly-(styrene sulfonic acid), (3, 4-ethylenedioxythiophene)-Polyethylene Glycol, poly-3-hexyl thiophene, poly-3 methyl thiophene, polypyrrole, polyaniline, polyacetylene, p-phenylene vinylene, poly(ethylene oxide), in poly(propylene oxide) any one or multiple, auto-dope or plain macromolecular compound, or tin indium oxide, Indium sesquioxide. antimony, the zinc oxide of adulterated al, magnesium-doped zinc oxide, in the stibium oxide of doped with fluorine any one or multiple.
5. the method that photic field induced effect according to claim 4 strengthens solar battery efficiency, it is characterised in that: the material of described conductive membrane layer is (3,4-ethylenedioxythiophene)-poly-(styrene sulfonic acid).
6. the method that photic field induced effect according to claim 1 strengthens solar battery efficiency, it is characterised in that: in described step (2), film-forming process includes any one in thermal evaporation, spin-coating method, magnetron sputtering method.
7. the method that photic field induced effect according to claim 1 strengthens solar battery efficiency, it is characterised in that: in described step (2), after film-forming process, also include annealing process.
8. the method that photic field induced effect according to claim 1 strengthens solar battery efficiency, it is characterised in that: in described step (2), the thickness of function film is Nano grade.
9. the method that photic field induced effect according to claim 1 strengthens solar battery efficiency, it is characterised in that: described solaode includes any one in Si based solar battery, III-V race's solaode and organic solar batteries.
10. the method that photic field induced effect according to claim 9 strengthens solar battery efficiency, it is characterised in that: described solaode is organic-silicon heterogenous photovoltaic cell.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610111226.8A CN105655443A (en) | 2016-02-29 | 2016-02-29 | Method for enhancing solar cell efficiency based on light induced field inductive effect |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610111226.8A CN105655443A (en) | 2016-02-29 | 2016-02-29 | Method for enhancing solar cell efficiency based on light induced field inductive effect |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105655443A true CN105655443A (en) | 2016-06-08 |
Family
ID=56492035
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610111226.8A Pending CN105655443A (en) | 2016-02-29 | 2016-02-29 | Method for enhancing solar cell efficiency based on light induced field inductive effect |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105655443A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106711263A (en) * | 2016-12-06 | 2017-05-24 | 庄爱芹 | Solar cell module and manufacturing method thereof |
| CN106833634A (en) * | 2016-12-30 | 2017-06-13 | 华中科技大学 | A kind of water base method for preparing perovskite nano material and products thereof |
| CN111755534A (en) * | 2020-06-10 | 2020-10-09 | 浙江大学 | Graphene/semiconductor built-in electric field regulated PN junction solar cell and preparation method thereof |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060162767A1 (en) * | 2002-08-16 | 2006-07-27 | Angelo Mascarenhas | Multi-junction, monolithic solar cell with active silicon substrate |
| CN102522453A (en) * | 2011-12-14 | 2012-06-27 | 中国科学院宁波材料技术与工程研究所 | Manufacturing method of field effect crystalline silicon solar cell |
| CN104022185A (en) * | 2014-06-17 | 2014-09-03 | 华北电力大学 | Perovskite membrane and preparation and application method thereof |
| CN104201284A (en) * | 2014-08-29 | 2014-12-10 | 国家纳米科学中心 | Integrated solar battery based on perovskite solar battery and bulk heterojunction solar battery and preparation method thereof |
| TW201513380A (en) * | 2013-08-06 | 2015-04-01 | Newsouth Innovations Pty Ltd | A high efficiency stacked solar cell |
| CN104769736A (en) * | 2012-09-18 | 2015-07-08 | 埃西斯创新有限公司 | Optoelectronic device |
| CN104979421A (en) * | 2014-04-11 | 2015-10-14 | 中国科学院大连化学物理研究所 | Lamination solar battery |
| CN104993058A (en) * | 2015-05-27 | 2015-10-21 | 南昌大学 | Layered perovskite structure material and application in methylamine lead perovskite thin-film solar cell |
| CN105226190A (en) * | 2015-08-27 | 2016-01-06 | 华北电力大学 | A kind of planar heterojunction perovskite solar cell and preparation method thereof |
| WO2016012274A1 (en) * | 2014-07-21 | 2016-01-28 | Basf Se | Organic-inorganic tandem solar cell |
-
2016
- 2016-02-29 CN CN201610111226.8A patent/CN105655443A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060162767A1 (en) * | 2002-08-16 | 2006-07-27 | Angelo Mascarenhas | Multi-junction, monolithic solar cell with active silicon substrate |
| CN102522453A (en) * | 2011-12-14 | 2012-06-27 | 中国科学院宁波材料技术与工程研究所 | Manufacturing method of field effect crystalline silicon solar cell |
| CN104769736A (en) * | 2012-09-18 | 2015-07-08 | 埃西斯创新有限公司 | Optoelectronic device |
| TW201513380A (en) * | 2013-08-06 | 2015-04-01 | Newsouth Innovations Pty Ltd | A high efficiency stacked solar cell |
| CN104979421A (en) * | 2014-04-11 | 2015-10-14 | 中国科学院大连化学物理研究所 | Lamination solar battery |
| CN104022185A (en) * | 2014-06-17 | 2014-09-03 | 华北电力大学 | Perovskite membrane and preparation and application method thereof |
| WO2016012274A1 (en) * | 2014-07-21 | 2016-01-28 | Basf Se | Organic-inorganic tandem solar cell |
| CN104201284A (en) * | 2014-08-29 | 2014-12-10 | 国家纳米科学中心 | Integrated solar battery based on perovskite solar battery and bulk heterojunction solar battery and preparation method thereof |
| CN104993058A (en) * | 2015-05-27 | 2015-10-21 | 南昌大学 | Layered perovskite structure material and application in methylamine lead perovskite thin-film solar cell |
| CN105226190A (en) * | 2015-08-27 | 2016-01-06 | 华北电力大学 | A kind of planar heterojunction perovskite solar cell and preparation method thereof |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106711263A (en) * | 2016-12-06 | 2017-05-24 | 庄爱芹 | Solar cell module and manufacturing method thereof |
| CN106833634A (en) * | 2016-12-30 | 2017-06-13 | 华中科技大学 | A kind of water base method for preparing perovskite nano material and products thereof |
| CN111755534A (en) * | 2020-06-10 | 2020-10-09 | 浙江大学 | Graphene/semiconductor built-in electric field regulated PN junction solar cell and preparation method thereof |
| CN111755534B (en) * | 2020-06-10 | 2022-03-11 | 浙江大学 | Graphene/semiconductor built-in electric field regulated PN junction solar cell and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108767118B (en) | A kind of ternary all-polymer solar battery | |
| Yang et al. | Tuning of the contact properties for high-efficiency Si/PEDOT: PSS heterojunction solar cells | |
| Ghosekar et al. | Review on performance analysis of P3HT: PCBM-based bulk heterojunction organic solar cells | |
| Moiz et al. | A stamped PEDOT: PSS–silicon nanowire hybrid solar cell | |
| CN106531888B (en) | A kind of modifying interface material | |
| TWI397201B (en) | P3ht-tio2 photovoltaic cell having nanodots and method for forming the same | |
| Lee et al. | A 14.7% Organic/silicon nanoholes hybrid solar cell via interfacial engineering by solution-processed inorganic conformal layer | |
| CN103296211B (en) | Heterojunction solar battery device of organic-two dimensional crystal-inorganic hybridization and preparation method thereof | |
| Abdelhameed et al. | Efficiency enhancement of Si nanostructure hybrid solar cells by optimizing non-radiative energy transfer from Si quantum dots | |
| Ge et al. | Substantial improvement of short wavelength response in n-SiNW/PEDOT: PSS solar cell | |
| Peng et al. | Reduce the hysteresis effect with the PEIE interface dipole effect in the organic-inorganic hybrid perovskite CH3NH3PbI3-xClx solar cell | |
| Yang et al. | Polymer/Si heterojunction hybrid solar cells with rubrene: DMSO organic semiconductor film as an electron-selective contact | |
| CN105655443A (en) | Method for enhancing solar cell efficiency based on light induced field inductive effect | |
| CN111223989B (en) | Amphoteric molecule modified perovskite photovoltaic device and preparation method and application thereof | |
| CN102280590B (en) | Solar cell by virtue of taking colloid quantum dots and graphene as light anode and manufacturing method thereof | |
| CN107256926A (en) | Solar energy and the dual-purpose battery device of ion energy storage and preparation method thereof | |
| CN108807696B (en) | Method for improving interface modification of organic solar cell | |
| CN102779943A (en) | High-efficiency organic-inorganic hybrid solar cell and preparation method thereof | |
| Yan et al. | Plasmon-enhanced polymer bulk heterojunction solar cells with solution-processable Ag nanoparticles | |
| Lee et al. | Investigation performance and mechanisms of inverted polymer solar cells by pentacene doped P3HT: PCBM | |
| Deng et al. | ITO surface modification for inverted organic photovoltaics | |
| Bereznev et al. | Hybrid solar cells based on CuInS2 and organic buffer–sensitizer layers | |
| Iimori et al. | Influence of External Electric Fields on Photoluminescence and Charge Carrier Dynamics of π-Conjugated Polymer P3HT in Multilayer Films with Heterojunctions to TiO2 and Sb2S3 | |
| Ballipinar et al. | Planar mixed halide perovskite-PCBM solar cells on flexible glass substrates processed at low temperature without ITO | |
| Zhou et al. | Preparation of Ga3+: ZnO quantum dots and the photoelectric properties of sensitized polycrystalline silicon solar cells |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20160608 |
|
| RJ01 | Rejection of invention patent application after publication |