CN105655419A - Method for preparing black silicon material - Google Patents
Method for preparing black silicon material Download PDFInfo
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- CN105655419A CN105655419A CN201610169188.1A CN201610169188A CN105655419A CN 105655419 A CN105655419 A CN 105655419A CN 201610169188 A CN201610169188 A CN 201610169188A CN 105655419 A CN105655419 A CN 105655419A
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- silicon
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- 229910021418 black silicon Inorganic materials 0.000 title claims abstract description 41
- 238000000034 method Methods 0.000 title claims abstract description 30
- 239000002210 silicon-based material Substances 0.000 title claims abstract description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 72
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 71
- 239000010703 silicon Substances 0.000 claims abstract description 71
- 239000011669 selenium Substances 0.000 claims abstract description 24
- 229910052711 selenium Inorganic materials 0.000 claims abstract description 21
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims abstract description 19
- 238000002207 thermal evaporation Methods 0.000 claims abstract description 12
- 239000012535 impurity Substances 0.000 claims abstract description 11
- 238000010329 laser etching Methods 0.000 claims abstract description 7
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims description 43
- 238000010521 absorption reaction Methods 0.000 claims description 14
- 239000010410 layer Substances 0.000 claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 10
- 239000011241 protective layer Substances 0.000 claims description 9
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 6
- 229910021641 deionized water Inorganic materials 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 abstract description 6
- 238000005516 engineering process Methods 0.000 abstract description 4
- OHKMFOAYJDGMHW-UHFFFAOYSA-N [Si].[Se] Chemical compound [Si].[Se] OHKMFOAYJDGMHW-UHFFFAOYSA-N 0.000 abstract description 3
- 239000002131 composite material Substances 0.000 abstract description 3
- 238000004544 sputter deposition Methods 0.000 abstract description 3
- 229910052798 chalcogen Inorganic materials 0.000 abstract 1
- 150000001787 chalcogens Chemical class 0.000 abstract 1
- 239000000463 material Substances 0.000 description 10
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 6
- 229910021419 crystalline silicon Inorganic materials 0.000 description 5
- 229910052717 sulfur Inorganic materials 0.000 description 5
- 239000011593 sulfur Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 229910018503 SF6 Inorganic materials 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000000608 laser ablation Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000010422 painting Methods 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- 240000008042 Zea mays Species 0.000 description 1
- 235000005824 Zea mays ssp. parviglumis Nutrition 0.000 description 1
- 235000002017 Zea mays subsp mays Nutrition 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 235000005822 corn Nutrition 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- WRQGPGZATPOHHX-UHFFFAOYSA-N ethyl 2-oxohexanoate Chemical compound CCCCC(=O)C(=O)OCC WRQGPGZATPOHHX-UHFFFAOYSA-N 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
- H01L31/0288—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention belongs to the field of black silicon material preparation, and particularly relates to a method for preparing a selenium-silicon composite film in a thermal evaporation and magnetron sputtering mode and preparing black silicon in a femtosecond laser etching mode. According to the method, as a silicon film formed on a selenium film in the existing technology in a sputtering mode serves as a protection layer, volatilization of chalcogens in the femtosecond laser etching process is reduced, the doping content is increased, impurities Se introduced by laser pulse irradiation can be prevented from dispersing to the grain boundary, and thus the doping concentration of impurities Se on the surface is guaranteed to improve the absorptivity of black silicon. The absorptivity of black silicon prepared through the method is higher than 95% at the 400-1100 nm band, and the absorptivity of black silicon is higher than 90% at the 1100-2200 nm band. Compared with a black silicon material prepared through a method that only a selenium film is formed in a thermal evaporation mode, but no silicon protection layer is formed for covering, the absorptivity of black silicon prepared through the method is obviously increased at the near-infrared band.
Description
Technical field
The invention belongs to black silicon material preparation field, it is specifically related to a kind of adopt the mode of thermal evaporation and magnetron sputtering to prepare selenium silicon composite membrane, and utilize the method for the femtosecond laser etching black silicon of preparation.
Background technology
Crystalline silicon material resource is enriched, there is easy acquisition, easily purify, doping high temperature resistant, easy etc. advantage, semicon industry plays important role, has a wide range of applications in detector, sensor, solar cell preparation field. But, the inherently defect of crystalline silicon and limit its application at photoelectric device. Crystalline silicon is indirect bandgap material, and under room temperature, energy gap is 1.124eV, and the cutoff wavelength that crystalline silicon absorbs is 1100nm. When lambda1-wavelength is greater than 1100nm, the specific absorption of crystalline silicon and responsiveness can reduce greatly. Therefore, often adopt germanium or three or five compound material to prepare detector at these wave bands of detection.
1998, the people such as Harvard University Mazur were at sulfur hexafluoride (SF6) utilize under atmosphere femtosecond laser to irradiate silicon chip, the cone-shaped forest structure of the ordered arrangement of micron dimension is defined at silicon chip surface, this kind of structure greatly reduces surface albedo. Owing to outward appearance is black, this kind of material is named as " black silicon ". Black silicon all has the specific absorption higher than 90% near ultraviolet near infrared (200-2500nm) wave band, has the photoconductive gain of superelevation, and the photoelectric current of generation is the hundred times of traditional silicon material, and compatible good with existing silicon technology. Therefore, black silicon is a kind of material very popular at present, attracts numerous domestic and international researchist to study.
Black silicon prepared by traditional wet-etching technology owing to not adulterating, although having the specific absorption higher than 90% at visible light wave range, in the raising of specific absorption of infrared band and not obvious. Utilize femtosecond laser at SF6Under background gas, the black silicon of preparation also can reach more than 90% in the specific absorption of near-infrared band. Research shows, scan in silicon substrate process at femtosecond laser and can form element sulphur over-saturation doped silicon material, in silicon forbidden band, form impurity band and hand over folded with silicon band tail, make silicon energy gap be reduced to 0.4eV, extend and absorb frequency range, it is achieved the high-selenium corn of infrared band.
This kind of doping way needs to carry out under atmosphere surrounding, and limits doped element composition. 2006, MichaelA.Sheehy utilized the mode that powder revolves painting to revolve on a silicon substrate and is coated with one layer of sulfur family element powder as doped source, utilizes the mode flying second etching, it is achieved the doping of other sulfur family elements (selenium, tellurium). Research shows, selenium, tellurium also can introduce impurity level in black silicon face forbidden band, it is to increase infrared waveband absorbing rate. 2009, BrainR.Tull improved the preparation method of sulfur family element rete, adopted the mode of thermal evaporation to steam plating sulfur family element rete on a silicon substrate as doped source. Revolve the mode of painting relative to powder, film prepared by hot steaming method contacts with silicon substrate better and has better homogeneity. But, in the process of femtosecond laser etching, a large amount of impurity absorbs pulse energy and volatilizees, and affects the doping content of black silicon.
Summary of the invention
For above-mentioned existing problems or deficiency, the present invention, on the basis of thermal evaporation plated film, utilizes the mode of magnetron sputtering to deposit one layer of silicon fiml as protective layer, and then carries out femtosecond laser etch silicon; The volatilization that protective layer can reduce in femtosecond laser etching process in impurity element, it is to increase doping content, and then realize the object improving ir-absorbance.
The technical scheme of disclosure of the invention comprises:
Prepare a method for black silicon material, comprise the following steps:
Step 1, silicon substrate is cleaned, for subsequent use to obtain cleaning silicon substrate;
The mode of step 2, employing thermal evaporation deposits one layer of selenium film as impurity source in surface of silicon, and selenium film thickness is 50��300nm;
Step 3, adopting and prepare one layer of silicon fiml again as silicon protective layer on silicon substrate selenium film that the mode of magnetron sputtering prepared in step 2, silicon film thickness is 50��150nm;
Step 4, silicon substrate step 3 prepared carry out femtosecond laser etching under 0.2��0.8atm nitrogen atmosphere, and when femtosecond laser etches, incident light energy density is 1��10kJ/m2, sweep velocity is 0.5��10mm/s.
Step 5, by scanning etching after silicon substrate put into hydrofluoric acid, remove surface silicon oxide layer; Clean with deionized water and blow with nitrogen dry, obtain black silicon.
Described silicon substrate is N-type substrate;
Described step 1 is specially and adopts RCA standard cleaning method to be cleaned by silicon substrate; The silicon substrate cleaned is put into the organism of the ultrasonic removing remained on surface of acetone again; Finally by silicon substrate ultrasonic clean in deionized water, and blow dry for subsequent use in a nitrogen atmosphere.
Use the black silicon prepared of aforesaid method in the specific absorption of 400��1100nm wave band higher than 95%, in the specific absorption of 1100��2200nm wave band higher than 90%.
In the present invention; by introducing silicon fiml on existing Process ba-sis as impurity source protective layer; namely the silicon fiml sputtered on selenium film is as protective layer; the volatilization flying sulfur family element in second etching process can be reduced; improve doping content; and the impurity Se that laser pulses irradiate can be stoped to introduce spreads to grain boundary, thus keep it in the doping content on surface, to improve the specific absorption of black silicon.
In sum, the invention has the beneficial effects as follows: use the black silicon prepared of the method in the specific absorption of 400��1100nm wave band higher than 95%, in the specific absorption of 1100��2200nm wave band higher than 90%. Compared to not covering silicon protective layer, only thermal evaporation selenium film and the doped black silicon material prepared, doped black silicon prepared by present method is significantly improved in near-infrared band specific absorption.
Accompanying drawing explanation
Fig. 1 is the process flow sheet of the manufacture black silicon material method of embodiment;
Fig. 2 be embodiment thermal evaporation selenium film and sputtering silicon fiml after schematic diagram;
Fig. 3 is the schematic cross-section of embodiment silicon substrate material after femtosecond laser etches;
Fig. 4 is the abosrption spectrogram of embodiment silicon substrate material after femtosecond laser etches;
Reference numeral: 1-silicon substrate, 2-selenium film, 3-silicon fiml, the doped black silicon structure that 4-laser scanning is formed after etching.
Embodiment
Below in conjunction with accompanying drawing, the present invention is described in detail.
It is illustrated in figure 1 the schematic flow sheet of the present embodiment.
Step 1: obtain clean silicon substrate.
The N-type silicon chip selecting Doping Phosphorus is substrate material. Then adopt RCA standard cleaning method to be cleaned by silicon substrate, remove oxide on surface. The silicon substrate cleaned is put into acetone ultrasonic 10 minutes again, remove the organism of remained on surface. Finally by silicon substrate ultrasonic 5 minutes in deionized water, and blow dry in a nitrogen atmosphere.
Step 2: thermal evaporation selenium film
Silicon substrate cleaned for step 1 is put on the worktable of vacuum-evaporator unit, the vacuum tightness in vacuum chamber is evacuated to 6 �� 10-4Pa. Starting evaporation element, the selenium film evaporating one layer of 100nm at silicon substrate polished surface is as impurity source.
Step 3: magnetron sputtering silicon fiml
Silicon substrate step 2 prepared is put on the walking unit in magnetron sputtering machine vacuum chamber, and first vacuum tightness by vacuum chamber is evacuated to 5 �� 10-4Pa, then lead to into argon gas, it is 5 �� 10 to vacuum chamber vacuum tightness-1Pa. Power-on, regulating power, to argon gas starter, opens walking unit, and the silicon fiml sputtering one layer of 50nm on selenium film again is as protective layer.
Silicon substrate material structure after step 3 process is as shown in Figure 2. Silicon substrate is 1, and selenium film is 2, and silicon fiml is 3.
Step 4: the femtosecond laser scanning black silicon of etching
Silicon substrate step 3 prepared puts into vacuum chamber, leads to into nitrogen as shielding gas after pumping chamber air, and nitrogen pressure is 0.5atm. With femtosecond laser with energy density 3kJ/m2, sweep velocity 0.5mm/s carries out scanning etching, thus forms microstructure on a silicon substrate and realize doping. Silicon substrate through femtosecond laser scanning etching can form doped black silicon structure on surface. In the present embodiment, as shown in Figure 3, wherein 1 is silicon substrate to the silicon substrate material schematic cross-section after laser ablation, the 4 doped black silicon structures formed after etching for laser scanning.
Step 5: remove surface oxidation silicon layer
By scanning etching after silicon substrate put into concentration be 5% hydrofluoric acid soak 5 minutes, remove surface silicon oxide layer. Clean with deionized water and blow with nitrogen dry, prepare black silicon.
In the present embodiment, laser ablation silicon substrate material abosrption spectrogram as shown in Figure 4, is respectively the absorption spectrum that selenium silicon composite membrane prepares doped black silicon, thermal evaporation selenium film prepares doped black silicon. Compared to not covering silicon protective layer, only thermal evaporation selenium film and the doped black silicon material prepared, doped black silicon prepared by present method is significantly improved in near-infrared band specific absorption.
Claims (4)
1. prepare a method for black silicon material, comprise the following steps:
Step 1, silicon substrate is cleaned, for subsequent use to obtain cleaning silicon substrate;
The mode of step 2, employing thermal evaporation deposits one layer of selenium film as impurity source in surface of silicon, and selenium film thickness is 50��300nm;
Step 3, adopting and prepare one layer of silicon fiml again as silicon protective layer on silicon substrate selenium film that the mode of magnetron sputtering prepared in step 2, silicon film thickness is 50��150nm;
Step 4, silicon substrate step 3 prepared carry out femtosecond laser etching under 0.2��0.8atm nitrogen atmosphere, and when femtosecond laser etches, incident light energy density is 1��10kJ/m2, sweep velocity is 0.5��10mm/s;
Step 5, by scanning etching after silicon substrate put into hydrofluoric acid, remove surface silicon oxide layer; Clean with deionized water and blow with nitrogen dry, obtain black silicon.
2. prepare the method for black silicon material as claimed in claim 1, it is characterised in that: described silicon substrate is N-type silicon chip.
3. prepare the method for black silicon material as claimed in claim 1, it is characterised in that: described step 1 is specially and adopts RCA standard cleaning method to be cleaned by silicon substrate; The silicon substrate cleaned is put into the ultrasonic removing remained on surface organism of acetone again; Finally by silicon substrate ultrasonic clean in deionized water, and blow dry for subsequent use in a nitrogen atmosphere.
4. the black silicon adopting the arbitrary described method preparing black silicon material of claim 1-3 obtained, it is characterised in that: in the specific absorption of 400��1100nm wave band higher than 95%, in the specific absorption of 1100��2200nm wave band higher than 90%.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610169188.1A CN105655419B (en) | 2016-03-22 | 2016-03-22 | A kind of method for preparing black silicon material |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610169188.1A CN105655419B (en) | 2016-03-22 | 2016-03-22 | A kind of method for preparing black silicon material |
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| CN105655419A true CN105655419A (en) | 2016-06-08 |
| CN105655419B CN105655419B (en) | 2017-10-17 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109950336A (en) * | 2019-04-18 | 2019-06-28 | 电子科技大学 | A kind of black silicon material and preparation method thereof |
| CN111081797A (en) * | 2019-12-31 | 2020-04-28 | 北京北方华创真空技术有限公司 | Processing method of monocrystalline silicon wafer, monocrystalline silicon wafer and solar cell |
| WO2022007320A1 (en) * | 2020-07-08 | 2022-01-13 | 泰州隆基乐叶光伏科技有限公司 | Preparation method for solar cell and solar cell |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109950336A (en) * | 2019-04-18 | 2019-06-28 | 电子科技大学 | A kind of black silicon material and preparation method thereof |
| CN109950336B (en) * | 2019-04-18 | 2021-02-19 | 电子科技大学 | Black silicon material and preparation method thereof |
| CN111081797A (en) * | 2019-12-31 | 2020-04-28 | 北京北方华创真空技术有限公司 | Processing method of monocrystalline silicon wafer, monocrystalline silicon wafer and solar cell |
| CN111081797B (en) * | 2019-12-31 | 2021-04-27 | 北京北方华创真空技术有限公司 | Processing method of monocrystalline silicon wafer, monocrystalline silicon wafer and solar cell |
| WO2022007320A1 (en) * | 2020-07-08 | 2022-01-13 | 泰州隆基乐叶光伏科技有限公司 | Preparation method for solar cell and solar cell |
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