CN105655419A - Method for preparing black silicon material - Google Patents

Method for preparing black silicon material Download PDF

Info

Publication number
CN105655419A
CN105655419A CN201610169188.1A CN201610169188A CN105655419A CN 105655419 A CN105655419 A CN 105655419A CN 201610169188 A CN201610169188 A CN 201610169188A CN 105655419 A CN105655419 A CN 105655419A
Authority
CN
China
Prior art keywords
silicon
silicon substrate
black silicon
black
prepared
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201610169188.1A
Other languages
Chinese (zh)
Other versions
CN105655419B (en
Inventor
吴志明
唐菲
杜玲艳
李睿
胡征
李世彬
李伟
吴雪飞
姬春晖
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Electronic Science and Technology of China
Original Assignee
University of Electronic Science and Technology of China
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Electronic Science and Technology of China filed Critical University of Electronic Science and Technology of China
Priority to CN201610169188.1A priority Critical patent/CN105655419B/en
Publication of CN105655419A publication Critical patent/CN105655419A/en
Application granted granted Critical
Publication of CN105655419B publication Critical patent/CN105655419B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0236Special surface textures
    • H01L31/02363Special surface textures of the semiconductor body itself, e.g. textured active layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264Inorganic materials
    • H01L31/028Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
    • H01L31/0288Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table characterised by the doping material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The invention belongs to the field of black silicon material preparation, and particularly relates to a method for preparing a selenium-silicon composite film in a thermal evaporation and magnetron sputtering mode and preparing black silicon in a femtosecond laser etching mode. According to the method, as a silicon film formed on a selenium film in the existing technology in a sputtering mode serves as a protection layer, volatilization of chalcogens in the femtosecond laser etching process is reduced, the doping content is increased, impurities Se introduced by laser pulse irradiation can be prevented from dispersing to the grain boundary, and thus the doping concentration of impurities Se on the surface is guaranteed to improve the absorptivity of black silicon. The absorptivity of black silicon prepared through the method is higher than 95% at the 400-1100 nm band, and the absorptivity of black silicon is higher than 90% at the 1100-2200 nm band. Compared with a black silicon material prepared through a method that only a selenium film is formed in a thermal evaporation mode, but no silicon protection layer is formed for covering, the absorptivity of black silicon prepared through the method is obviously increased at the near-infrared band.

Description

A kind of method preparing black silicon material
Technical field
The invention belongs to black silicon material preparation field, it is specifically related to a kind of adopt the mode of thermal evaporation and magnetron sputtering to prepare selenium silicon composite membrane, and utilize the method for the femtosecond laser etching black silicon of preparation.
Background technology
Crystalline silicon material resource is enriched, there is easy acquisition, easily purify, doping high temperature resistant, easy etc. advantage, semicon industry plays important role, has a wide range of applications in detector, sensor, solar cell preparation field. But, the inherently defect of crystalline silicon and limit its application at photoelectric device. Crystalline silicon is indirect bandgap material, and under room temperature, energy gap is 1.124eV, and the cutoff wavelength that crystalline silicon absorbs is 1100nm. When lambda1-wavelength is greater than 1100nm, the specific absorption of crystalline silicon and responsiveness can reduce greatly. Therefore, often adopt germanium or three or five compound material to prepare detector at these wave bands of detection.
1998, the people such as Harvard University Mazur were at sulfur hexafluoride (SF6) utilize under atmosphere femtosecond laser to irradiate silicon chip, the cone-shaped forest structure of the ordered arrangement of micron dimension is defined at silicon chip surface, this kind of structure greatly reduces surface albedo. Owing to outward appearance is black, this kind of material is named as " black silicon ". Black silicon all has the specific absorption higher than 90% near ultraviolet near infrared (200-2500nm) wave band, has the photoconductive gain of superelevation, and the photoelectric current of generation is the hundred times of traditional silicon material, and compatible good with existing silicon technology. Therefore, black silicon is a kind of material very popular at present, attracts numerous domestic and international researchist to study.
Black silicon prepared by traditional wet-etching technology owing to not adulterating, although having the specific absorption higher than 90% at visible light wave range, in the raising of specific absorption of infrared band and not obvious. Utilize femtosecond laser at SF6Under background gas, the black silicon of preparation also can reach more than 90% in the specific absorption of near-infrared band. Research shows, scan in silicon substrate process at femtosecond laser and can form element sulphur over-saturation doped silicon material, in silicon forbidden band, form impurity band and hand over folded with silicon band tail, make silicon energy gap be reduced to 0.4eV, extend and absorb frequency range, it is achieved the high-selenium corn of infrared band.
This kind of doping way needs to carry out under atmosphere surrounding, and limits doped element composition. 2006, MichaelA.Sheehy utilized the mode that powder revolves painting to revolve on a silicon substrate and is coated with one layer of sulfur family element powder as doped source, utilizes the mode flying second etching, it is achieved the doping of other sulfur family elements (selenium, tellurium). Research shows, selenium, tellurium also can introduce impurity level in black silicon face forbidden band, it is to increase infrared waveband absorbing rate. 2009, BrainR.Tull improved the preparation method of sulfur family element rete, adopted the mode of thermal evaporation to steam plating sulfur family element rete on a silicon substrate as doped source. Revolve the mode of painting relative to powder, film prepared by hot steaming method contacts with silicon substrate better and has better homogeneity. But, in the process of femtosecond laser etching, a large amount of impurity absorbs pulse energy and volatilizees, and affects the doping content of black silicon.
Summary of the invention
For above-mentioned existing problems or deficiency, the present invention, on the basis of thermal evaporation plated film, utilizes the mode of magnetron sputtering to deposit one layer of silicon fiml as protective layer, and then carries out femtosecond laser etch silicon; The volatilization that protective layer can reduce in femtosecond laser etching process in impurity element, it is to increase doping content, and then realize the object improving ir-absorbance.
The technical scheme of disclosure of the invention comprises:
Prepare a method for black silicon material, comprise the following steps:
Step 1, silicon substrate is cleaned, for subsequent use to obtain cleaning silicon substrate;
The mode of step 2, employing thermal evaporation deposits one layer of selenium film as impurity source in surface of silicon, and selenium film thickness is 50��300nm;
Step 3, adopting and prepare one layer of silicon fiml again as silicon protective layer on silicon substrate selenium film that the mode of magnetron sputtering prepared in step 2, silicon film thickness is 50��150nm;
Step 4, silicon substrate step 3 prepared carry out femtosecond laser etching under 0.2��0.8atm nitrogen atmosphere, and when femtosecond laser etches, incident light energy density is 1��10kJ/m2, sweep velocity is 0.5��10mm/s.
Step 5, by scanning etching after silicon substrate put into hydrofluoric acid, remove surface silicon oxide layer; Clean with deionized water and blow with nitrogen dry, obtain black silicon.
Described silicon substrate is N-type substrate;
Described step 1 is specially and adopts RCA standard cleaning method to be cleaned by silicon substrate; The silicon substrate cleaned is put into the organism of the ultrasonic removing remained on surface of acetone again; Finally by silicon substrate ultrasonic clean in deionized water, and blow dry for subsequent use in a nitrogen atmosphere.
Use the black silicon prepared of aforesaid method in the specific absorption of 400��1100nm wave band higher than 95%, in the specific absorption of 1100��2200nm wave band higher than 90%.
In the present invention; by introducing silicon fiml on existing Process ba-sis as impurity source protective layer; namely the silicon fiml sputtered on selenium film is as protective layer; the volatilization flying sulfur family element in second etching process can be reduced; improve doping content; and the impurity Se that laser pulses irradiate can be stoped to introduce spreads to grain boundary, thus keep it in the doping content on surface, to improve the specific absorption of black silicon.
In sum, the invention has the beneficial effects as follows: use the black silicon prepared of the method in the specific absorption of 400��1100nm wave band higher than 95%, in the specific absorption of 1100��2200nm wave band higher than 90%. Compared to not covering silicon protective layer, only thermal evaporation selenium film and the doped black silicon material prepared, doped black silicon prepared by present method is significantly improved in near-infrared band specific absorption.
Accompanying drawing explanation
Fig. 1 is the process flow sheet of the manufacture black silicon material method of embodiment;
Fig. 2 be embodiment thermal evaporation selenium film and sputtering silicon fiml after schematic diagram;
Fig. 3 is the schematic cross-section of embodiment silicon substrate material after femtosecond laser etches;
Fig. 4 is the abosrption spectrogram of embodiment silicon substrate material after femtosecond laser etches;
Reference numeral: 1-silicon substrate, 2-selenium film, 3-silicon fiml, the doped black silicon structure that 4-laser scanning is formed after etching.
Embodiment
Below in conjunction with accompanying drawing, the present invention is described in detail.
It is illustrated in figure 1 the schematic flow sheet of the present embodiment.
Step 1: obtain clean silicon substrate.
The N-type silicon chip selecting Doping Phosphorus is substrate material. Then adopt RCA standard cleaning method to be cleaned by silicon substrate, remove oxide on surface. The silicon substrate cleaned is put into acetone ultrasonic 10 minutes again, remove the organism of remained on surface. Finally by silicon substrate ultrasonic 5 minutes in deionized water, and blow dry in a nitrogen atmosphere.
Step 2: thermal evaporation selenium film
Silicon substrate cleaned for step 1 is put on the worktable of vacuum-evaporator unit, the vacuum tightness in vacuum chamber is evacuated to 6 �� 10-4Pa. Starting evaporation element, the selenium film evaporating one layer of 100nm at silicon substrate polished surface is as impurity source.
Step 3: magnetron sputtering silicon fiml
Silicon substrate step 2 prepared is put on the walking unit in magnetron sputtering machine vacuum chamber, and first vacuum tightness by vacuum chamber is evacuated to 5 �� 10-4Pa, then lead to into argon gas, it is 5 �� 10 to vacuum chamber vacuum tightness-1Pa. Power-on, regulating power, to argon gas starter, opens walking unit, and the silicon fiml sputtering one layer of 50nm on selenium film again is as protective layer.
Silicon substrate material structure after step 3 process is as shown in Figure 2. Silicon substrate is 1, and selenium film is 2, and silicon fiml is 3.
Step 4: the femtosecond laser scanning black silicon of etching
Silicon substrate step 3 prepared puts into vacuum chamber, leads to into nitrogen as shielding gas after pumping chamber air, and nitrogen pressure is 0.5atm. With femtosecond laser with energy density 3kJ/m2, sweep velocity 0.5mm/s carries out scanning etching, thus forms microstructure on a silicon substrate and realize doping. Silicon substrate through femtosecond laser scanning etching can form doped black silicon structure on surface. In the present embodiment, as shown in Figure 3, wherein 1 is silicon substrate to the silicon substrate material schematic cross-section after laser ablation, the 4 doped black silicon structures formed after etching for laser scanning.
Step 5: remove surface oxidation silicon layer
By scanning etching after silicon substrate put into concentration be 5% hydrofluoric acid soak 5 minutes, remove surface silicon oxide layer. Clean with deionized water and blow with nitrogen dry, prepare black silicon.
In the present embodiment, laser ablation silicon substrate material abosrption spectrogram as shown in Figure 4, is respectively the absorption spectrum that selenium silicon composite membrane prepares doped black silicon, thermal evaporation selenium film prepares doped black silicon. Compared to not covering silicon protective layer, only thermal evaporation selenium film and the doped black silicon material prepared, doped black silicon prepared by present method is significantly improved in near-infrared band specific absorption.

Claims (4)

1. prepare a method for black silicon material, comprise the following steps:
Step 1, silicon substrate is cleaned, for subsequent use to obtain cleaning silicon substrate;
The mode of step 2, employing thermal evaporation deposits one layer of selenium film as impurity source in surface of silicon, and selenium film thickness is 50��300nm;
Step 3, adopting and prepare one layer of silicon fiml again as silicon protective layer on silicon substrate selenium film that the mode of magnetron sputtering prepared in step 2, silicon film thickness is 50��150nm;
Step 4, silicon substrate step 3 prepared carry out femtosecond laser etching under 0.2��0.8atm nitrogen atmosphere, and when femtosecond laser etches, incident light energy density is 1��10kJ/m2, sweep velocity is 0.5��10mm/s;
Step 5, by scanning etching after silicon substrate put into hydrofluoric acid, remove surface silicon oxide layer; Clean with deionized water and blow with nitrogen dry, obtain black silicon.
2. prepare the method for black silicon material as claimed in claim 1, it is characterised in that: described silicon substrate is N-type silicon chip.
3. prepare the method for black silicon material as claimed in claim 1, it is characterised in that: described step 1 is specially and adopts RCA standard cleaning method to be cleaned by silicon substrate; The silicon substrate cleaned is put into the ultrasonic removing remained on surface organism of acetone again; Finally by silicon substrate ultrasonic clean in deionized water, and blow dry for subsequent use in a nitrogen atmosphere.
4. the black silicon adopting the arbitrary described method preparing black silicon material of claim 1-3 obtained, it is characterised in that: in the specific absorption of 400��1100nm wave band higher than 95%, in the specific absorption of 1100��2200nm wave band higher than 90%.
CN201610169188.1A 2016-03-22 2016-03-22 A kind of method for preparing black silicon material Expired - Fee Related CN105655419B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610169188.1A CN105655419B (en) 2016-03-22 2016-03-22 A kind of method for preparing black silicon material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610169188.1A CN105655419B (en) 2016-03-22 2016-03-22 A kind of method for preparing black silicon material

Publications (2)

Publication Number Publication Date
CN105655419A true CN105655419A (en) 2016-06-08
CN105655419B CN105655419B (en) 2017-10-17

Family

ID=56495296

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610169188.1A Expired - Fee Related CN105655419B (en) 2016-03-22 2016-03-22 A kind of method for preparing black silicon material

Country Status (1)

Country Link
CN (1) CN105655419B (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109950336A (en) * 2019-04-18 2019-06-28 电子科技大学 A kind of black silicon material and preparation method thereof
CN111081797A (en) * 2019-12-31 2020-04-28 北京北方华创真空技术有限公司 Processing method of monocrystalline silicon wafer, monocrystalline silicon wafer and solar cell
WO2022007320A1 (en) * 2020-07-08 2022-01-13 泰州隆基乐叶光伏科技有限公司 Preparation method for solar cell and solar cell
JP2022517527A (en) * 2018-12-20 2022-03-09 ハジェテペ ユニヴェルシテシ Semiconductor photodiodes that function over a wide band and how to obtain them

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1294540A (en) * 1999-02-25 2001-05-09 精工爱普生株式会社 Method for machining work by laser beam
US20060205182A1 (en) * 2005-03-10 2006-09-14 Nec Electronics Corporation Method for manufacturing semiconductor device
CN101824654A (en) * 2009-03-04 2010-09-08 中国科学院半导体研究所 Method for manufacturing black silicon material
CN101950777A (en) * 2010-09-01 2011-01-19 中国科学院微电子研究所 Method for in-situ preparation of doped black silicon
CN102099898A (en) * 2008-07-16 2011-06-15 西奥尼克斯股份有限公司 Thin sacrificial masking films for protecting semiconductors from pulsed laser process
CN102321921A (en) * 2011-09-05 2012-01-18 西南科技大学 Method for rapidly preparing large-area and uniform black silicon material, and device thereof
CN102361039A (en) * 2011-10-31 2012-02-22 上海理工大学 Transparent conducting layer-based black silicon solar cell and preparation method thereof
CN103367476A (en) * 2012-03-27 2013-10-23 电子科技大学 N + / N type new black-silicon structure and preparation technology
CN103489951A (en) * 2013-09-05 2014-01-01 西南科技大学 Efficient double-faced black crystalline silicon solar cell
CN103762255A (en) * 2014-01-24 2014-04-30 中国科学院半导体研究所 Chalcogens over-saturation doped silicon infrared detector and manufacturing method thereof
CN105261561A (en) * 2014-07-16 2016-01-20 北京北方微电子基地设备工艺研究中心有限责任公司 Black silicon preparation method

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1294540A (en) * 1999-02-25 2001-05-09 精工爱普生株式会社 Method for machining work by laser beam
US20060205182A1 (en) * 2005-03-10 2006-09-14 Nec Electronics Corporation Method for manufacturing semiconductor device
CN102099898A (en) * 2008-07-16 2011-06-15 西奥尼克斯股份有限公司 Thin sacrificial masking films for protecting semiconductors from pulsed laser process
CN101824654A (en) * 2009-03-04 2010-09-08 中国科学院半导体研究所 Method for manufacturing black silicon material
CN101950777A (en) * 2010-09-01 2011-01-19 中国科学院微电子研究所 Method for in-situ preparation of doped black silicon
CN102321921A (en) * 2011-09-05 2012-01-18 西南科技大学 Method for rapidly preparing large-area and uniform black silicon material, and device thereof
CN102361039A (en) * 2011-10-31 2012-02-22 上海理工大学 Transparent conducting layer-based black silicon solar cell and preparation method thereof
CN103367476A (en) * 2012-03-27 2013-10-23 电子科技大学 N + / N type new black-silicon structure and preparation technology
CN103489951A (en) * 2013-09-05 2014-01-01 西南科技大学 Efficient double-faced black crystalline silicon solar cell
CN103762255A (en) * 2014-01-24 2014-04-30 中国科学院半导体研究所 Chalcogens over-saturation doped silicon infrared detector and manufacturing method thereof
CN105261561A (en) * 2014-07-16 2016-01-20 北京北方微电子基地设备工艺研究中心有限责任公司 Black silicon preparation method

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
MATTHEW J.SMITH ET AL.: "Improving dopant incorporation during femtosecond-laser doping of Si with a Se thin-film dopant precursor,", 《APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING》 *

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022517527A (en) * 2018-12-20 2022-03-09 ハジェテペ ユニヴェルシテシ Semiconductor photodiodes that function over a wide band and how to obtain them
CN109950336A (en) * 2019-04-18 2019-06-28 电子科技大学 A kind of black silicon material and preparation method thereof
CN109950336B (en) * 2019-04-18 2021-02-19 电子科技大学 Black silicon material and preparation method thereof
CN111081797A (en) * 2019-12-31 2020-04-28 北京北方华创真空技术有限公司 Processing method of monocrystalline silicon wafer, monocrystalline silicon wafer and solar cell
CN111081797B (en) * 2019-12-31 2021-04-27 北京北方华创真空技术有限公司 Processing method of monocrystalline silicon wafer, monocrystalline silicon wafer and solar cell
WO2022007320A1 (en) * 2020-07-08 2022-01-13 泰州隆基乐叶光伏科技有限公司 Preparation method for solar cell and solar cell

Also Published As

Publication number Publication date
CN105655419B (en) 2017-10-17

Similar Documents

Publication Publication Date Title
CN105655419A (en) Method for preparing black silicon material
CN108281509B (en) Oxide semiconductor-based photodetector and method for improving performance thereof
Salem et al. Reactive PLD of ZnO thin film for optoelectronic application.
CN106409987B (en) Based on Ir2O3/Ga2O3Deep ultraviolet APD detection diodes and preparation method thereof
CN105355671B (en) A kind of wide spectrum high-efficiency solar photovoltaic battery
CN102071396A (en) Method for preparing germanium quantum dot doped nano-titanium dioxide composite film
CN104300032A (en) Single crystal silicon solar ion implantation technology
CN110190150B (en) Broadband high-performance photoelectric detector based on palladium selenide thin film/silicon cone packaging structure heterojunction and manufacturing method thereof
CN109728132A (en) The preparation method of flip chip type visible light enhanced sensitivity silicon substrate avalanche photodiode array
CN106449795B (en) A kind of MoS with ITO/Pd double-decker combination electrodes2/ Si photovoltaic devices and preparation method thereof
KR101415251B1 (en) Multiple-Layered Buffer, and Its Fabrication Method, and Solor Cell with Multiple-Layered Buffer.
Shanmugam et al. Performance enhancement of polycrystalline silicon solar cell through sputter coated molybdenum disulphide surface films
CN112201711B (en) ZnO-based homojunction self-driven ultraviolet photoelectric detector and preparation method thereof
Raj et al. Performance of V2O5 hole selective layer in CdS/CdTe heterostructure solar cell
JP6990764B2 (en) Solar cells and their manufacturing methods
CN109755341B (en) Based on β -Ga2O3Solar blind ultraviolet photoelectric detector of/FTO heterojunction and preparation thereof
CN102956754A (en) Preparation method of absorbing layer of thin-film solar cell
US9196779B2 (en) Double sided barrier for encapsulating soda lime glass for CIS/CIGS materials
JP2011061017A (en) Method of manufacturing photoelectric converter
CN109950336B (en) Black silicon material and preparation method thereof
KR101439240B1 (en) Fabrication Method of Thin Absorber Layer of Solar Cell at Low Temperature.
CN113990969B (en) Stannous sulfide/gallium oxide based heterojunction PN junction ultraviolet detector and preparation method
CN102290450A (en) N-type crystalline silicon solar battery
CN110323130A (en) A kind of chromium doped black silicon material and preparation method thereof
CN113437164B (en) Photoconductive all-silicon solar blind ultraviolet detector and manufacturing method thereof

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20171017

Termination date: 20200322