CN105655415A - High-photovoltaic-conversion-rate anti-aging solar cell piece with large illumination plane - Google Patents
High-photovoltaic-conversion-rate anti-aging solar cell piece with large illumination plane Download PDFInfo
- Publication number
- CN105655415A CN105655415A CN201610145825.1A CN201610145825A CN105655415A CN 105655415 A CN105655415 A CN 105655415A CN 201610145825 A CN201610145825 A CN 201610145825A CN 105655415 A CN105655415 A CN 105655415A
- Authority
- CN
- China
- Prior art keywords
- gate line
- main gate
- cell piece
- thin grid
- grid lines
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005286 illumination Methods 0.000 title claims abstract description 19
- 230000003712 anti-aging effect Effects 0.000 title claims abstract description 14
- 238000006243 chemical reaction Methods 0.000 claims abstract description 18
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 10
- 239000004332 silver Substances 0.000 abstract description 10
- 229910052709 silver Inorganic materials 0.000 abstract description 10
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 230000002035 prolonged effect Effects 0.000 abstract 1
- 239000002002 slurry Substances 0.000 description 8
- 238000003466 welding Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 6
- 230000005693 optoelectronics Effects 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000009466 transformation Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 229920002472 Starch Polymers 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000013083 solar photovoltaic technology Methods 0.000 description 1
- 235000019698 starch Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention relates to a high-photovoltaic-conversion-rate anti-aging solar cell piece with a large illumination plane. The solar cell piece comprises a cell piece body, multiple main grid lines in parallel and thin grid lines perpendicular to the main grid lines are arranged on the light receiving face of the cell piece body, multiple blank regions with the two oblong arc ends are formed in each main grid line, blank regions are not formed in the overlapping positions of regions between the front two fine grid lines and the main grid lines, blank regions are formed in the portions, behind the overlapping positions, of the main grid lines, the longitudinal length of the blank regions is equal to the distance between the three thin grid lines, the gap between every two connected blank regions is equal to the distance between every two thin grid lines, and the distance between each blank region and the two edges of the corresponding main grid line is 0.6 mm. The illumination face of the cell piece is increased by 1.13%, the current collecting efficiency of the cell piece is improved by 1.01%, the photovoltaic conversion rate exceeds 18.5%, the usage amount of silver paste is reduced by 7.21%, production total cost is reduced by 0.83%, and the service life is prolonged by 5 years or more.
Description
Technical field
The present invention relates to a kind of high plane of illumination, high optoelectronic conversion ratio, anti-aging solar battery sheet. Belong to photovoltaic field. Belong to solar-photovoltaic technology field.
Background technology
Current crystal silicon solar energy battery industrialization has formed scale, and technology is comparative maturity also, but the photoelectric transformation efficiency advanced with the world differ 2% and of a relatively high cost and constrain it service life and develop. In affecting the factor of plane of illumination and anti-aging and collection rate, cell piece grid line is one of them key factor. The grid line design of solar battery sheet sensitive surface is to collect photoelectric current to greatest extent, and namely grid line should be more thick, more intensive more good, but this necessarily decreases the light-receiving area of cell piece, forms the contradiction of high shading. And in the factor affecting production cost, the cost of cell piece positive electrode grid line slurry accounts for the 20% of totle drilling cost. The service life also having solar module closes alive solar battery sheet, there is the fracture of main thin grid line junction because of time elderization and terminates the life-span. Therefore seek one and there is low shading rate, low cost, high optoelectronic conversion ratio, long service life not only can guarantee that the welding quality of main gate line pulling force and cell piece, and high plane of illumination high optoelectronic conversion ratio low cost anti-aging solar battery sheet of consumption silver slurry amount that can reduce main gate line and preparation method thereof is particularly important.
Summary of the invention
The technical problem to be solved is to provide a kind of high plane of illumination, high optoelectronic conversion ratio, anti-aging low-cost solar cell piece for above-mentioned prior art.
This invention address that the technical scheme that the problems referred to above adopt is: a kind of high plane of illumination height light conversion ratio anti-aging solar battery sheet, it includes cell piece body, sensitive surface at described cell piece body is provided with some parallel main gate line and some thin grid lines vertical with main gate line, described main gate line offers the clear area that multiple two ends are oval arc, the crossover position of the region between the first two thin grid line and main gate line does not set clear area, thereafter main gate line arranges clear area, and the longitudinal length of described clear area is the distance length between three thin grid lines, be connected the distance length being spaced apart between two thin grid lines between two clear areas, two back gauges of described clear area and main gate line are 0.6mm.
Preferably, described main gate line two ends are arranged to horn shape, and width is main gate line width 1/5th of described horn shape top, both sides are camber line.
The thin grid line being preferably located between outermost main gate line and cell piece body edges stretches out from main gate line is from coarse to fine, and two ends width ratio is three to one.
Preferably, described thin grid line is interconnected and forms serpentine configuration and connect top employing arc connection.
The junction being preferably located between the thin grid line between main gate line and main gate line is arranged to horn mouth shape and is connected.
Compared with prior art, it is an advantage of the current invention that:
The present invention arranges change main gate line by most adaptability innovation, the shape of thin grid line not only increases battery plate illumination face (increasing plane of illumination 1.13%), improve cell piece collected current efficiency (improving efficiency 1.01%) photoelectric transformation efficiency more than 18.5%, and reduce silver slurry consumption 7.21%, reduce total production cost 0.83%, increase the service life more than 5 years, simultaneously in the welding performance guaranteeing that anelectrode pulling force is qualified and good, cell piece reliability be applied to assembly after is greatly improved, improve the service life of product, reduce the power attenuation rate after use.
Accompanying drawing explanation
Fig. 1 is the structure partial schematic diagram of the present invention.
Fig. 2 is the enlarged drawing of the thin grid line shape signal in main gate line outer end at 1-1 place in Fig. 1.
Fig. 3 is that in Fig. 1,1-2 place main gate line and thin grid line junction are " horn mouth " shape signal enlarged drawing.
Fig. 4 is the thin grid line in 1-3 place serpentine configuration nose-circle arc enlarged drawing in Fig. 1.
Fig. 5 is that in Fig. 1,1-4 place main gate line is connected enlarged drawing with thin grid line horn mouth.
Wherein in Fig. 1:
Cell piece body 1
Thin grid line 2
Main gate line 3
Clear area 4.
Detailed description of the invention
Below in conjunction with accompanying drawing embodiment, the present invention is described in further detail.
Referring to Fig. 1, the present invention relates to a kind of high plane of illumination height light conversion ratio anti-aging solar battery sheet, including cell piece body 1, this solar battery sheet includes the crystal silicon square piece body that cutting-up is processed into, on crystal silicon chip, the conductive material such as printing silver slurry or silver aluminium paste applies one layer of conductive foil more again, sensitive surface at described cell piece body 1 is provided with four parallel main gate line 3 and some thin grid lines 2 vertical with main gate line, the invention process designs the clear area 4 having multiple two ends to be oval arc in main gate line 3, silver slurry is not printed in (referring in Fig. 1 4) clear area, thus reaching to reduce shading surface, increase the magnitude of current, reduce silver slurry consumption and reduce cost. improve being designed as of photoelectric conversion rate main gate line blank region: when the crossover position of the region between the first two thin grid line 2 and main gate line 3 does not set clear area 4(because of components welding, part main gate line is as exposed portion), thereafter main gate line 3 arranges clear area 4, and the longitudinal length of described clear area 4 is the distance length between three thin grid lines 2, be connected the distance length being spaced apart between two thin grid lines 2 between two clear areas 4, and two back gauges of described clear area 4 and main gate line 3 are 0.6mm, described design pitch can guarantee that the electric current of thin grid region can be collected completely, can guarantee that pulling force and test probe accurately test out the electrical property of cell piece, moreover it is possible to guarantee have excellent welding performance and higher welding positive rate.
Referring to Fig. 2, the invention process is arranged to the equally possible silver that reduces of horn shape main gate line two ends and starches consumption, reduces cost;Reduce shading-area simultaneously and increase plane of illumination, improving photoelectric conversion rate, described main gate line two ends " loudspeaker " shape top is 1/5th of main gate line width, and both sides are camber line, described main gate line top " loudspeaker " shape can ensure that good photoelectric current is collected and welding, pulling force contact performance.
Referring to Fig. 3, in the invention process, the thin grid line 2 between outermost main gate line 3 and cell piece body 1 edge stretches out from main gate line 3 is from coarse to fine, so arrange decrease silver slurry make consumption, thus reducing cost. Decrease shading surface simultaneously, add plane of illumination, improve and collect photoelectric properties, improve photoelectric conversion rate; The butt end of described thin grid line 2 is three to one with taper end width ratio, not only can ensure that pulling force, welding requirements, more can improve electric conductivity and photoelectric conversion rate.
Referring to Fig. 1, 4, the invention process is arranged to interlaced connection all two adjacent thin grid line two ends, and carefully grid line becomes the serpentine configuration being interconnected and connects top employing arc, it not square, thus adding the electric current collection ability of grid line, improve the photoelectric transformation efficiency of light-receiving area and solar battery sheet, decrease silver slurry consumption simultaneously, reduce cost, the thin grid line of described serpentine configuration is interleaved adjacent connection, top is circular shape, described thin grid line is arranged to serpentine configuration and nose-circle arc shape not only increases electric current collection ability, add light-receiving area and improve photoelectric conversion capacity, reduce production cost, and guarantee welding, pulling force, electrical property conforms to standard-required.
Referring to Fig. 1,5, in the invention process, junction between thin grid line 2 and main gate line 3 between main gate line 3 is arranged to horn mouth shape and is connected, so can ensure that contact better with thin grid line of main gate line, drastically increase thin grid line electric current collection ability and electric conductivity, can be greatly reduced after cell piece makes assembly in use procedure because environmental factors causes the aging probability causing main gate line and thin grid line junction to break apart of cell piece, more than 5 years service life of cell piece can be greatly enhanced.
In addition to the implementation, present invention additionally comprises the technical scheme that other embodiments, all employing equivalents or equivalence substitute mode are formed, all should fall within the protection domain of the claims in the present invention.
Claims (5)
1. one kind high plane of illumination height light conversion ratio anti-aging solar battery sheet, it includes cell piece body (1), sensitive surface described cell piece body (1) is provided with some parallel main gate line (3) and some thin grid lines (2) vertical with main gate line, it is characterized in that: in described main gate line (3), offer the clear area (4) that multiple two ends are oval arc, the crossover position of the region between the first two thin grid line (2) and main gate line (3) does not set clear area (4), thereafter main gate line (3) arranges clear area (4), and the longitudinal length of described clear area (4) is the distance length between three thin grid lines (2), be connected the distance length being spaced apart between two thin grid lines (2) between two clear areas (4), two back gauges of described clear area (4) and main gate line (3) are 0.6mm.
2. one according to claim 1 high plane of illumination height light conversion ratio anti-aging solar battery sheet, it is characterized in that: described main gate line (3) two ends are arranged to horn shape, the width on described horn shape top is 1/5th of main gate line (3) width, and both sides are camber line.
3. one according to claim 1 high plane of illumination height light conversion ratio anti-aging solar battery sheet, it is characterized in that: the thin grid line (2) being positioned between outermost main gate line (3) and cell piece body (1) edge stretches out from main gate line (3) is from coarse to fine, and two ends width ratio is three to one.
4. one according to claim 1 high plane of illumination height light conversion ratio anti-aging solar battery sheet, it is characterised in that: described thin grid line (2) is interconnected and forms serpentine configuration and connect top employing arc connection.
5. one according to claim 1 high plane of illumination height light conversion ratio anti-aging solar battery sheet, it is characterised in that: it is positioned at the thin grid line (2) between main gate line (3) and the junction between main gate line (3) is arranged to horn mouth shape and is connected.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610145825.1A CN105655415A (en) | 2016-03-15 | 2016-03-15 | High-photovoltaic-conversion-rate anti-aging solar cell piece with large illumination plane |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610145825.1A CN105655415A (en) | 2016-03-15 | 2016-03-15 | High-photovoltaic-conversion-rate anti-aging solar cell piece with large illumination plane |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105655415A true CN105655415A (en) | 2016-06-08 |
Family
ID=56493706
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610145825.1A Pending CN105655415A (en) | 2016-03-15 | 2016-03-15 | High-photovoltaic-conversion-rate anti-aging solar cell piece with large illumination plane |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105655415A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109473491A (en) * | 2018-11-22 | 2019-03-15 | 晶科能源科技（海宁）有限公司 | A kind of imbrication cell piece |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102184973A (en) * | 2010-11-11 | 2011-09-14 | 江阴浚鑫科技有限公司 | Positive electrode structure of solar battery plate |
| WO2011140815A1 (en) * | 2010-05-13 | 2011-11-17 | 无锡尚德太阳能电力有限公司 | Solar cell, screen printing plate and solar cell module |
| CN202076273U (en) * | 2011-04-30 | 2011-12-14 | 常州天合光能有限公司 | Crystalline silicon solar cell main grid structure |
| CN205609534U (en) * | 2016-03-15 | 2016-09-28 | 江苏东鋆光伏科技有限公司 | Highlight high photoelectric conversion rate anti -aging solar wafer that shows up |
-
2016
- 2016-03-15 CN CN201610145825.1A patent/CN105655415A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011140815A1 (en) * | 2010-05-13 | 2011-11-17 | 无锡尚德太阳能电力有限公司 | Solar cell, screen printing plate and solar cell module |
| CN102184973A (en) * | 2010-11-11 | 2011-09-14 | 江阴浚鑫科技有限公司 | Positive electrode structure of solar battery plate |
| CN202076273U (en) * | 2011-04-30 | 2011-12-14 | 常州天合光能有限公司 | Crystalline silicon solar cell main grid structure |
| CN205609534U (en) * | 2016-03-15 | 2016-09-28 | 江苏东鋆光伏科技有限公司 | Highlight high photoelectric conversion rate anti -aging solar wafer that shows up |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109473491A (en) * | 2018-11-22 | 2019-03-15 | 晶科能源科技（海宁）有限公司 | A kind of imbrication cell piece |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN202004028U (en) | Solar cell assembly | |
| CN201868440U (en) | Front side electrode structure of solar battery | |
| CN110707161A (en) | Screen printing plate structure of monocrystalline silicon solar cell | |
| CN205609534U (en) | Highlight high photoelectric conversion rate anti -aging solar wafer that shows up | |
| CN104362190A (en) | Interdigital electrode for solar cell | |
| CN203895470U (en) | Solar energy cell front side electrode structure | |
| CN104882497A (en) | Grid-shaped electrode solar cell | |
| CN105655415A (en) | High-photovoltaic-conversion-rate anti-aging solar cell piece with large illumination plane | |
| CN103545386A (en) | Solar cell electrode shape | |
| CN204243052U (en) | A kind of solar cell interdigited electrode structure | |
| CN202616241U (en) | Positive electrode structure of crystalline silicon solar battery | |
| CN212934626U (en) | IBC battery main grid structure | |
| CN206471338U (en) | Cleavable solar energy is without main gate line crystal-silicon battery slice | |
| CN202556882U (en) | Positive electrode screen of solar cell | |
| CN102130193A (en) | Positive electrode of silicon solar cell designed according to topology principle | |
| CN202142541U (en) | Solar cell slice and solar-cell panel provided with same | |
| CN204632771U (en) | A kind of grid electrode solar battery sheet | |
| CN203277402U (en) | Solar cell light receiving face grate line | |
| CN206432271U (en) | Solar energy is without main gate line crystal-silicon battery slice | |
| CN103560154A (en) | Back-contact solar cell assembly | |
| CN202004029U (en) | Fine wire conductor-connected modular cell | |
| CN219959010U (en) | Gradual change half tone structure of PERC battery | |
| CN211929498U (en) | Turnover bus bar | |
| CN204577434U (en) | A kind of solar cell | |
| CN202332870U (en) | Novel polycrystalline silicon solar battery grid line structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20160608 |