CN105633191B - A kind of have two-dimentional transition metal chalcogenide homojunction photodetector of vertical-growth structure and preparation method thereof - Google Patents
A kind of have two-dimentional transition metal chalcogenide homojunction photodetector of vertical-growth structure and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- 229910052723 transition metal Inorganic materials 0.000 title claims abstract description 10
- -1 transition metal chalcogenide Chemical class 0.000 title claims abstract description 10
- 239000000463 material Substances 0.000 claims abstract description 58
- 239000004065 semiconductor Substances 0.000 claims abstract description 50
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims description 13
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
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- 238000004549 pulsed laser deposition Methods 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 7
- 229910052961 molybdenite Inorganic materials 0.000 claims description 7
- 229910052982 molybdenum disulfide Inorganic materials 0.000 claims description 7
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 4
- 241000931526 Acer campestre Species 0.000 claims description 3
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 230000004044 response Effects 0.000 abstract description 13
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- 239000010409 thin film Substances 0.000 description 8
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- 239000010703 silicon Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 239000011889 copper foil Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
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- 238000012546 transfer Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 229910016001 MoSe Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000005083 Zinc sulfide Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 229910000365 copper sulfate Inorganic materials 0.000 description 2
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
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- 229910000510 noble metal Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
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- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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Abstract
The invention discloses a kind of have two-dimentional transition metal chalcogenide homojunction photodetector of vertical-growth structure and preparation method thereof, this detector is to be disposed with hearth electrode and mask layer in the upper surface of dielectric substrate；It is provided centrally with a through hole connecting with hearth electrode in mask layer；Perpendicular to hearth electrode upper surface, it is located at growth in through hole and has N-type semiconductor material, growth in described N-type semiconductor material has a p-type semiconductor material, and two kinds of semi-conducting materials can form PN homojunction along the direction growth perpendicular to bottom surface in growth course；It is provided with top electrode above mask layer, hearth electrode all forms Ohmic contact with N-type semiconductor material, top electrode and p-type semiconductor material.The detector of the present invention has the high advantage of fast response time, sensitivity, also has the advantages that preparation is simple, repeatable strong simultaneously.
Description
First, technical field
The present invention relates to a kind of two-dimentional transition metal chalcogenide homojunction photodetector with vertical-growth structure
And preparation method thereof, belong to semiconductor photoelectric device technical field.
2nd, background technology
Photodetector is one of important devices in opto-electronic device, is widely used in optic communication, industrial detection and quantum and leads to
The various fields such as letter.In recent years, developing rapidly with science and technology, the detector with nano photodetectors as representative is because of tool
The excellent specific properties such as responsiveness height are had to receive much concern.Currently, the report retrieving is concentrated mainly on monodimension nanometer material and two dimension
Nano material.For example, N-shaped doped zinc sulphide (ZnS) nano belt/linear light gain is up to 107, but its longer carrier lifetime limit
Made device response speed [Yongqiang Yu, Jiansheng Jie, Peng Jiang,
et.al.J.Mater.Chem.2011,21,12632.].Wherein two-dimentional MoS2Optical responsivity is up to 880AW-1, response speed is
A few tens of milliseconds-tens microsecond) [O.Lopez-Sanchez, D.Lembke, et.al.Nat.Nanotechnol.2013,8,497；
Yan Zhang, Yongqiang Yu, et.al.Small 2016,12,1062.].Many devices reported above are due to device
Size is minimum, the low characteristic of response speed is still hard to meet real world applications requirement, how to prepare more excellent light electrical resistivity survey
Survey device and very important status is served for the development of electron trade.
On the whole, the development of nano photoelectric device is limited to the controlledly synthesis of material and the preparation technology of device.Just
For two-dimension nano materials, current preparation method have top-to-bottom method based on mechanical stripping and chemical stripping and with
CVD, PVD are the bottom-to-top method of representative.Nanometer sheet is by mechanically pulling off during shifting with chemical stripping unavoidably can
Destroy the surface texture of material and introduce extra interface pollution.Although the nano material crystal mass ratio prepared by this method
Higher, but be difficult to separate the nanometer sheet of large area size.It is the commonplace one kind of current application that CVD synthesizes two-dimensional material
Technology, can be used to synthesize large area, large-sized nanometer sheet, but this method is but limited by substrate.Therefore, how
Preparation high-performance, low value, large-sized two-dimensional material are to realize the key of preparation high-performance optical electric explorer.
3rd, content of the invention
The shortcoming existing for above-mentioned prior art and deficiency, the present invention is intended to provide a kind of two dimension with vertical stratification
Transition metal chalcogenide homojunction photodetector and preparation method thereof, technical problem to be solved is by pulse laser
The method construct homojunction of deposition, the characteristic such as realizes that response speed is high, preparation is simple simultaneously, is easy to repeat.
The present invention solves technical problem, adopts the following technical scheme that：
The present invention has the two-dimentional transition metal chalcogenide homojunction photodetector of vertical-growth structure, and its feature exists
In：Described homojunction photoelectric detector is the upper surface of dielectric substrate to be provided with hearth electrode, in the upper table of described hearth electrode
Face is provided with mask layer；Described mask layer is insulant, is provided centrally with one with described hearth electrode even in described mask layer
Logical through hole；Perpendicular to described hearth electrode upper surface, grow the N-type semiconductor material having in array structure in described through hole
Material, growth in described N-type semiconductor material has p-type semiconductor material, described N-type semiconductor material and institute in array structure
State p-type semiconductor material and form PN homojunction；It is provided with top electrode above described mask layer, described top electrode is without departing from mask
Layer border and through hole is completely covered；Described hearth electrode is partly led with described N-type semiconductor material, described top electrode and described p-type
Body material all forms Ohmic contact.Described semi-conducting material is MoSe2Or MoS2, the semi-conducting material of two kinds of different conduction-types
Can be along growing perpendicular to the direction of hearth electrode and form PN homojunction in growth course；
The present invention has the two-dimentional transition metal chalcogenide homojunction near infrared photodetector of vertical-growth structure, its
Feature lies also in：Described hearth electrode is Au electrode, Ti/Au electrode or Ag electrode；The thickness of described hearth electrode is 20nm-
300nm.Described Ti/Au electrode is that deposition has the Au that thickness is 30-60nm on thickness is for the Ti of 10-50nm.
Described top electrode is Graphene electrodes or noble metal electrode.
The preparation method of the above-mentioned two-dimentional transition metal chalcogenide homojunction photodetector with vertical-growth structure,
Comprise the steps：
A, dielectric substrate upper surface be deposited with hearth electrode；
B, it is deposited with mask layer in the upper surface of described hearth electrode, and reserve one with described hearth electrode even at the center of mask layer
Logical through hole；
C, be deposited with two dimension N-type semiconductor material, N-type semiconductor material in through hole using pulsed laser deposition or magnetron sputtering
Material grows perpendicular to hearth electrode in array structure, and hearth electrode forms Ohmic contact with N-type semiconductor material；Then adopt pulse again
Laser deposition or magnetron sputtering epitaxial p type semi-conducting material in described N-type semiconductor material, N-type semiconductor material and p-type half
Conductor material forms PN homojunction；
D, top electrode is arranged on mask layer, makes top electrode without departing from the border of mask layer and through hole is completely covered, top
Electrode forms Ohmic contact with p-type semiconductor material, that is, complete the preparation of homojunction near infrared photodetector.
N-type semiconductor material is prepared by pulsed laser deposition or the process conditions of p-type semiconductor material are：Laser power
For 40～500mJ, optical maser wavelength be 248nm, pulse frequency be 1～20Hz, air pressure be 0.1～10-5Pa.
Compare with prior art, beneficial effects of the present invention are embodied in：
The present invention devises a kind of two-dimentional transition metal chalcogenide homojunction photodetection with vertical-growth structure
Device, two kinds of different semi-conducting materials of the same race of conduction type can be effectively formed PN homojunction, electrode simultaneously in growth course
Material and quasiconductor form good Ohmic contact；Because the distinctive vertical stratification of its material and good device architecture make this
The detector of invention has the advantage that response speed is high, sensitivity is strong；Also have the advantages that preparation is simple, repeatable strong simultaneously.
4th, brief description
Fig. 1 is the floor map of homojunction photoelectric detector of the present invention；
Fig. 2 is the XPS picture of homojunction Mo and Se in photodetector prepared by embodiment 1；
Fig. 3 be photoelectric detector prepared by embodiment 1 have light and unglazed under I-V curve；
Fig. 4 is the time response curve of photoelectric detector prepared by embodiment 1；
Fig. 5 is photoresponse curve under 1MHz for the photodetector prepared by embodiment 1；
Fig. 6 is the frequency characteristic of photodetector prepared by embodiment 1；
Fig. 7 be photoelectric detector prepared by embodiment 2 have light and unglazed under I-V curve；
Fig. 8 is photoresponse curve under 2MHz for the photodetector prepared by embodiment 2；
Fig. 9 is the frequency characteristic of photodetector prepared by embodiment 2；
In figure label：1 is dielectric substrate；2 is hearth electrode；3 is mask layer；4 is N-type semiconductor material；5 partly lead for p-type
Body material；6 is top electrode.
5th, specific embodiment
Embodiment 1
As shown in figure 1, the homojunction photodetector that the present embodiment has vertical-growth structure is upper in dielectric substrate 1
Surface is provided with hearth electrode 2, and the upper surface of hearth electrode 2 is provided with mask layer 3；It is provided centrally with one and bottom in mask layer 3
The through hole of electrode 2 connection；Perpendicular to hearth electrode 2 upper surface, grow the N-type semiconductor material having in array structure in through hole
4, growth in N-type semiconductor material 4 has the p-type semiconductor material 5 in array structure, and N-type semiconductor material 4 and p-type are partly led
Body material 5 forms PN homojunction；It is provided with top electrode 6 above mask layer 3, top electrode 6 is without departing from the border of mask layer 3 and complete
All standing through hole；Hearth electrode 2 all forms Ohmic contact with N-type semiconductor material 4, top electrode 6 with p-type semiconductor material 5.
Specifically, dielectric substrate 1 has, from surface length, the silicon chip that thickness is 300nm silicon oxide；Hearth electrode 2 is that about 50nm is thick
Au electrode；Mask layer 3 is about the Al of 200nm for thickness2O3Insulating barrier；Semi-conducting material is MoSe2.
The homojunction photodetector of the present embodiment is prepared as follows：
A, surface length is had the silicon chip that thickness is 300nm silicon oxide pass through to be cleaned by ultrasonic clean after, by the side of electron beam
Formula is deposited with the thick Au electrode of one layer of about 50nm on its surface.
B, one layer of Al is deposited with Au electrode by pulsed laser deposition2O3Insulating barrier is as mask layer, and makes Al2O3
The through hole of an a diameter of 6cm is left as MoSe in the middle position of insulating barrier2Crystallizing field；The area of mask layer is about Au electricity
The 4/5 of pole, thickness about 200nm about.
C, on the silicon chip of evaporation Au electrode and insulating barrier, round-meshed mask plate is stayed in attached one layer of centre, and circular hole position corresponds to
Position in mask layer through hole；It is deposited with N-type MoSe of a layer thickness about 100nm by impulse laser deposition system in through hole2
Thin film, N-type MoSe2Thin film is in array structure perpendicular to Au electrode growth；Subsequently in N-type MoSe2It is deposited with one layer more equally on thin film
P-type MoSe of the about 100nm of the thickness in array structure2Thin film；The process conditions of pulsed laser deposition are：Laser power
120mJ, optical maser wavelength are 248nm, pulse frequency 3Hz, and air pressure is 10-5Pa, heats up 400 DEG C, and the time is 25min.
D, length is had after Copper Foil spin coating polymethyl methacrylate (PMMA) of Graphene and puts into etching liquid (copper sulfate：
Hydrochloric acid：Water=1:5:5) about etching half an hour in, remove Copper Foil substrate, take out Graphene and deionized water is fully washed
Only, transfer graphene on mask layer by wet method transfer, that is, obtain homojunction near infrared photodetector.
Fig. 2 is the XPS figure of the present embodiment gained homojunction, by compared with the XPS peak position of leading element it can be deduced that
The valence state of Mo is+4 valencys, and the valence state of Se is+divalent.This material is precisely MoSe2, show that plated film is successful.
Test the VA characteristic curve of the present embodiment obtained device using KEITHLEY 4200-SCS, result such as Fig. 3 institute
Show.It can be seen that when there is no light irradiation, device shows reasonable rectification characteristic, and device is under the conditions of reverse biased 0.5V
Dark current is 0.02mA.Under wavelength 808nm, the illumination condition of light intensity 0.73mW, due to photogenerated minority carriers, reverse photoelectricity
Stream rapidly increases to 0.35mA.
In order to further look at the reliability of device, measure the device shown in Fig. 4 using KEITHLEY 42000-SCS
Photoelectric current situation over time.As can be seen that under the conditions of no-bias, photoelectric current is 0.045mA, dark current is 2 × 10- 4MA, on-off ratio is up to 225.
Response device speed is to weigh an important indicator of photodetector, with light source, oscillograph and signal generator
It is assembled into quick photoresponse test system, the present embodiment obtained device is tested, obtain curve as shown in Figure 5, simultaneously
Depict response curve (as shown in Figure 6) under high frequency characteristics for the photoelectric current.Can be seen that the response of device by analyzing curve
Speed can reach nanosecond rank, and its rise time and fall time are respectively 110ns and 321ns, and the three dB bandwidth of device is
600kHz；This device performance alreadys exceed most photodetectors at present.Excellent device performance key factor is this
Kind of material in growth course can vertical-growth, carrier decreases scattering in transmitting procedure so that the migration of carrier
Rate greatly improves, and then has response speed quickly and preferable high frequency characteristics.
Embodiment 2：
The homojunction photodetector of the present embodiment has structure same as Example 1, differs only in quasiconductor material
Expect for MoS2.Its preparation method is as follows：
A, surface length is had the silicon chip that thickness is 300nm silicon oxide pass through to be cleaned by ultrasonic clean after, by the side of electron beam
Formula is deposited with the thick Au electrode of one layer of about 50nm on its surface.
B, one layer of Al is deposited with Au electrode by pulsed laser deposition2O3Insulating barrier is as mask layer, and makes Al2O3
The middle position of insulating barrier leave an a diameter of 6cm by being used as MoS2Crystallizing field；The area of mask layer is about Au electricity
The 4/5 of pole, thickness about 200nm about.
C, on the silicon chip of evaporation Au electrode and insulating barrier, round-meshed mask plate is stayed in attached one layer of centre, and circular hole position corresponds to
Position in mask layer through hole；It is deposited with N-type MoS of a layer thickness about 100nm by impulse laser deposition system in through hole2Thin
Film, N-type MoS2Thin film is in array structure perpendicular to Au electrode growth；Subsequently in N-type MoS2Being deposited with one layer on thin film again is in equally battle array
P-type MoS of the thickness of array structure about 100nm2Thin film；The process conditions of pulsed laser deposition are：Laser power 120mJ, swashs
The a length of 248nm of light wave, pulse frequency 3Hz, air pressure is 10-5Pa, heats up 400 DEG C, and the time is 25min.
D, length is had after Copper Foil spin coating polymethyl methacrylate (PMMA) of Graphene and puts into etching liquid (copper sulfate：
Hydrochloric acid：Water=1:5:5) about etching half an hour in, remove Copper Foil substrate, take out Graphene and deionized water is fully washed
Only, transfer graphene on mask layer by wet method transfer, that is, obtain homojunction near infrared photodetector.
Test the VA characteristic curve of the present embodiment obtained device using KEITHLEY 4200-SCS, result such as Fig. 7 institute
Show.It can be seen that when there is no light irradiation, device shows reasonable rectification characteristic, and device is dark under the conditions of reverse biased 1V
Electric current is 0.075mA.Under the illumination condition of wavelength 630nm, due to photogenerated minority carriers, reverse photoelectric current rapidly increases to
0.14mA.
With quick photoresponse test system, the present embodiment obtained device is tested, obtain curve as shown in Figure 8, with
When depict response curve (as shown in Figure 9) under high frequency characteristics for the photoelectric current.Can be seen that the sound of device by analyzing curve
Answer speed can reach nanosecond rank, under the conditions of 2MHz, its rise time and fall time are respectively 45ns and 79ns, device
Three dB bandwidth be up to 900kHz；This device performance alreadys exceed the photodetector of most two-dimension nano materials at present.
Excellent device performance key factor be this material in growth course can vertical-growth, carrier subtracts in transmitting procedure
Lack scattering so that the mobility of carrier greatly improves, and then there is response speed quickly and preferable high frequency characteristics.
Claims (5)
1. a kind of preparation method of the two-dimentional transition metal chalcogenide homojunction photodetector with vertical-growth structure, its
It is characterised by：
Described homojunction photoelectric detector is the upper surface of dielectric substrate (1) to be provided with hearth electrode (2), in described hearth electrode
(2) upper surface is provided with mask layer (3)；Described mask layer (3) is insulant, centrally disposed in described mask layer (3)
There is a through hole connecting with described hearth electrode (2)；Perpendicular to described hearth electrode (2) upper surface, it is located in described through hole and grows and have
N-type semiconductor material (4) in array structure, has the p-type half in array structure in the upper growth of described N-type semiconductor material (4)
Conductor material (5), described N-type semiconductor material (4) forms PN homojunction with described p-type semiconductor material (5)；In described mask
It is provided with top electrode (6), described top electrode (6) without departing from the border of mask layer (3) and is completely covered through hole above layer (3)；Institute
State hearth electrode (2) and all form Europe with described N-type semiconductor material (4), described top electrode (6) and described p-type semiconductor material (5)
Nurse contacts；Described semi-conducting material is MoSe2Or MoS2；
The preparation method of described homojunction photodetector comprises the steps：
A, dielectric substrate upper surface be deposited with hearth electrode；
B, it is deposited with mask layer in the upper surface of described hearth electrode, and reserves one at the center of mask layer and connect with described hearth electrode
Through hole；
C, be deposited with two dimension N-type semiconductor material in through hole using pulsed laser deposition or magnetron sputtering, N-type semiconductor material is in
Array structure grows perpendicular to hearth electrode, and hearth electrode forms Ohmic contact with N-type semiconductor material；Then adopt pulse laser again
Deposition or magnetron sputtering epitaxial p type semi-conducting material, N-type semiconductor material and P-type semiconductor in described N-type semiconductor material
Material forms PN homojunction；
D, top electrode is arranged on mask layer, makes top electrode without departing from the border of mask layer and through hole, top electrode are completely covered
Form Ohmic contact with p-type semiconductor material, that is, complete the preparation of homojunction near infrared photodetector.
2. preparation method according to claim 1 it is characterised in that：Described hearth electrode (2) is Au electrode, Ti/Au electrode
Or Ag electrode；The thickness of described hearth electrode (2) is 20nm-300nm.
3. preparation method according to claim 2 it is characterised in that：Described Ti/Au electrode is to be 10-50nm in thickness
On Ti, deposition has the Au that thickness is 30-60nm.
4. preparation method according to claim 1 it is characterised in that：Described top electrode (6) is Graphene electrodes or your gold
Belong to electrode.
5. preparation method according to claim 1 it is characterised in that：N-type semiconductor material is prepared by pulsed laser deposition
Expect or the process conditions of p-type semiconductor material are：Laser power is 40～500mJ, optical maser wavelength is 248nm, pulse frequency is 1
～20Hz, air pressure are 0.1～10-5Pa.
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