CN105632554B - The operating method of storage device - Google Patents
The operating method of storage device Download PDFInfo
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- CN105632554B CN105632554B CN201410609974.XA CN201410609974A CN105632554B CN 105632554 B CN105632554 B CN 105632554B CN 201410609974 A CN201410609974 A CN 201410609974A CN 105632554 B CN105632554 B CN 105632554B
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Abstract
The invention discloses a kind of operating methods of storage device.A kind of operating method of storage device includes write storage device as described below.Firstly, providing data.These data include multiple codings.Calculate the respective number of coding.Then, a rule of correspondence is generated according to the respective number of coding.In the rule of correspondence, each correspondence of coding to one of the multiple verifying voltage level sequentially arranged from low to high.Later, it is write data in storage device according to the rule of correspondence.
Description
Technical field
The present invention relates to the operating methods of storage device, especially with regard to the write-in of storage device.
Background technique
Various methods can be used to carry out in the write-in of storage device.One of method is step by-step impulse write-in
(Incremental Step Pulse Programming, ISPP).In step by-step impulse write-in processing, storage unit is logical
It crosses to write-in voltage VpgmIt is incrementally increased a small amount of fixed voltage Δ VISPPTo be written to high threshold voltage state.In in this way
Treatment process in, being closely located to the storage unit being written into may also be affected.This effect is known as that interference is written.If
The storage unit being written into is " slow storage unit ", that is, compared to needing write pulse more times for other storage units
Storage unit, then disturbing effect, which is written, just becomes more critical.
Summary of the invention
In the present invention, the operating method of storage device is provided, to reduce write-in interference.
According to some embodiments, a kind of operating method of storage device is provided.This operating method includes as described below
Write storage device.Firstly, providing multiple data to controller.These data include multiple codings (code).By controller meter
Calculate the respective number of coding.Then, a rule of correspondence is generated by controller according to the respective number of coding
(mapping rule).In the rule of correspondence, each correspondence of coding to the multiple verifying voltages electricity sequentially arranged from low to high
One of flat (verifying voltage level).Later, the one of storage device is write data to according to the rule of correspondence
In memory array.
According to some embodiments, a kind of operating method of storage device is provided.This operating method includes as described below
Write storage device.There is provided multiple data it is multiple first write-in page position, wherein these first write-in page positions include coding 0 and
Coding 1.1 respective number of coding 0 and coding in first write-in page position is calculated by a controller.It is compiled according in the first write-in page position
Code 0 and 1 respective number of coding are by controller first rule of correspondence of generation.Then, it is write according to first rule of correspondence write-in first
Enter page position into one first write-in page of storage device.There is provided multiple second write-ins page position of these data, wherein these second
It includes coding 0 and one yard 1 that page position, which is written,.Under 1 each of coding 0 and coding of the first write-in page position, the is calculated by controller
1 respective number of coding 0 and coding in two write-in page positions.According to second write-in page position in coding 0 and coding 1 respective number by
Controller generates second rule of correspondence.Then, according to the second write-in page position of second rule of correspondence write-in to the one the of storage device
In two write-in pages.There is provided multiple thirds write-in page position of these data, wherein these thirds are written page position and include coding 0 and compile
Code 1.Under the coding 0 and 1 each of coding of the first write-in page position and 1 each of coding 0 and coding of the second write-in page position, by
Controller calculates 1 respective number of coding 0 and coding in third write-in page position.Coding 0 and coding 1 in page position is written according to third
Respective number generates a third rule of correspondence by controller.Then, third write-in page position is written extremely according to the third rule of correspondence
In the third write-in page of storage device.
More preferably understand to have to above-mentioned and other aspect of the invention, preferred embodiment is cited below particularly, and cooperates institute
Accompanying drawings are described in detail below:
Detailed description of the invention
Fig. 1 is the operating method according to multistage storage type (Multi-Level-Cell, MLC) storage device of an embodiment
Write-in processing flow chart.
Fig. 2A~Fig. 2 C is the schematic diagram of the write-in processing of the operating method of MLC storage device.
Fig. 3 is the flow chart according to the reading process of the operating method of the MLC storage device of an embodiment.
Fig. 4 is the operation side according to three rank storage type (Triple-Level-Cell, TLC) storage devices of an embodiment
The flow chart of the write-in processing of method.
Fig. 5 A~Fig. 5 B is the schematic diagram of the write-in processing of the operating method of TLC storage device.
Fig. 6 is the flow chart according to the reading process of the operating method of the TLC storage device of an embodiment.
Fig. 7 is the flow chart according to the write-in processing of the operating method of the TLC storage device of an embodiment.
Fig. 8 A~Fig. 8 F is the schematic diagram of the write-in processing of the operating method of TLC storage device.
Fig. 9 is the flow chart according to the reading process of the operating method of the TLC storage device of an embodiment.
[symbol description]
152,154,156,158,160,162: position
252,254,256,258,260,262: position
352,354,356,358,360,362: position
A1, A2: group
B1, B2, B3, B4: group
S102, S104, S106, S108: step
S132, S134, S136: step
S202, S204, S206, S208: step
S232, S234, S236: step
S302、S304、S306、S308、S310、S312、S314、S316、S318、S320、S322、S324、S326、
S328, S330: step
S332, S334, S336: step
Specific embodiment
According to an embodiment, a kind of operating method of MLC storage device is provided.The MLC of this embodiment is deposited according to Fig. 1
The flow chart of the write-in processing of the operating method of storage device.
Firstly, providing multiple data to a controller in step S102.These data are encoded including first, second encodes,
Third coding and the 4th coding.Wherein, the first coding, the second coding, third coding and the 4th are encoded to two.For example,
First coding, the second coding, third coding and the 4th coding each can be one of coding 00,01,10 and 11.
Then, in step S104, it is respective that the first coding, the second coding, third coding and the 4th coding are calculated by controller
Number.In step S106, according to the first coding, the second coding, third coding and the 4th respective number of coding by controller
Generate a rule of correspondence.In the rule of correspondence, the first coding, the second coding, third coding and the 4th each correspondence of coding are to sequentially
The first verifying voltage level, the second verifying voltage level, third verifying voltage level and the 4th verifying electricity arranged from low to high
One of voltage level.For example, the first verifying voltage level is to erase to verify level (EV), the second verifying voltage electricity
Flat, third verifying voltage level and the 4th verifying voltage level can be write verification level (PV1, PV2, PV3).In an example
In, in the rule of correspondence, number the maximum is corresponding to first in the first coding, the second coding, third coding and the 4th coding
Verifying voltage level.In another example, in the rule of correspondence, in the first coding, the second coding, third coding and the 4th coding
Number the maximum is corresponding to the second verifying voltage level.The rule of correspondence can be stored in MLC storage device or external memory.
Due to having 24 kinds of rules of correspondence altogether, it is only necessary to which five positions (less than one byte) can store the used rule of correspondence and be
What.
Later, it in step S108, is write data in a memory array of MLC storage device according to the rule of correspondence.Step
Rapid S108 may include that the next write instruction of a page buffer to MLC storage device and writing data to from page buffer is deposited
Memory array.In some examples, under to page buffer before write instruction, error correction coding (error can be calculated
correction code)。
In some examples, before writing data to the array (S108) of MLC storage device, it can be turned according to the rule of correspondence
Change initial data.After initial data conversion, then write data into the page buffer of MLC storage device.This conversion step
Suddenly it can be carried out by controller.Alternatively, this switch process may be implemented in a software management layers, such as quick flashing translation layer (Flash
Translation Layer, FTL) or flash file system (flash file system).
The example that there is presently provided the write-in processing of the operating method of MLC storage device, such as Fig. 2A~Fig. 2 C illustrated.Such as
Shown in Fig. 2A, 16 are provided by data to be written.These data include four kinds of codings 00,01,10 and 11.Data include
The the first write-in page position 152 that will be written into and the second write-in page position 154 that will be written into.
Calculate the number of four kinds of codings 00,01,10 and 11.It as a result is seven codings of coding 01, one of coding 00, five
10, three codings 11.That is, will coding from number at most toward being 00,01,11,10 if minimum sequence.
Here, providing four verifying voltage level, including the first verifying voltage level, the second verifying voltage level, third
Verifying voltage level and the 4th verifying voltage level.In the default rule of correspondence, the corresponding extremely coding 11 of the first verifying voltage level,
Second verifying voltage level is corresponding to coding 10, and third verifying voltage level is corresponding to coding 00, the 4th verifying voltage level pair
It should be to coding 01.
In an example, due to number it is most be encoded to coding 00, coding 00 is corresponding to the first verifying voltage level.
Coding 01,11 and 10 is respectively corresponding to the second verifying voltage level, third verifying voltage level and the 4th verifying voltage level.
Then, coding 00,01,10 and 11 can be converted into coding 11,10,00 and 01, and be written into the array of MLC storage device.
The result of write-in is shown in Fig. 2 B, wherein the second write-in page position 158 of the first write-in page position 156 and write-in being written is different from original
The the first write-in page position 152 and original the second write-in page position 154 that will be written into that will be written into.It, can in this example
Write-in interference is greatly reduced.In addition, can also reduce bit error rate (bit error rate).
In another example, the most coding of number, that is, 00 is encoded, it is corresponding to the second verifying voltage level.Coding
01,11 and 10 are respectively corresponding to the first verifying voltage level, third verifying voltage level and the 4th verifying voltage level.It connects
, coding 00,01,10 and 11 can be converted into coding 10,11,00 and 01, and be written into the array of MLC storage device.It writes
The result entered is shown in Fig. 2 C, wherein be written first write-in page position 160 and write-in second write-in page position 162 be different from it is original will
The the first write-in page position 152 and original the second write-in page position 154 that will be written into be written into.In this example, it can drop
Low write-in interference, and bit error rate can be greatly reduced.Its demand of user Ke Yi selects the rule of correspondence.
The flow chart of the reading process of the operating method of the MLC storage device of this embodiment according to Fig. 3.Firstly,
Step S132 obtains the rule of correspondence by controller.In step S134, according to the rule of correspondence from the memory array of MLC storage device
Column read data.In the rule of correspondence, the first verifying voltage level for sequentially arranging from low to high, the second verifying voltage level,
Third verifying voltage level and the 4th each correspondence of verifying voltage level to the first coding, the second coding, third coding and the 4th compile
One of code.Later, in step S136, output data.In some examples, before output data, stores and fill from MLC
The read data of the memory array set can be converted first by controller, quick flashing translation layer or flash file system.
Now, according to an embodiment, a kind of operating method of TLC storage device is provided.This embodiment according to Fig. 4
The flow chart of the write-in processing of the operating method of TLC storage device.
Firstly, providing multiple data to a controller in step S202.These data are encoded including first, second encodes,
Third coding, the 4th coding, the 5th coding, the 6th coding, the 7th coding and the 8th coding.First coding, the second coding, third
Coding, the 4th coding, the 5th coding, the 6th coding, the 7th coding and the 8th are encoded to three.For example, the first coding, the
Two coding, third coding, the 4th coding, the 5th coding, the 6th coding, the 7th coding and the 8th coding each can for coding 000,
001, one of 010,011,100,101,110 and 111.
Then, in step S204, the first coding, the second coding, third coding, the 4th coding, the 5th are calculated by controller
Coding, the 6th coding, the 7th coding and the 8th respective number of coding.In step S206, encoded according to the first coding, second,
Third coding, the 4th coding, the 5th coding, the 6th coding, the 7th coding and the 8th respective number of coding are generated by controller
One rule of correspondence.In the rule of correspondence, the first coding, the second coding, third coding, the 4th coding, the 5th coding, the 6th are compiled
Code, the 7th coding and the 8th encode each correspondence to the first verifying voltage level, the second verifying voltage sequentially arranged from low to high
Level, third verifying voltage level, the 4th verifying voltage level, the 5th verifying voltage level, the 6th verifying voltage level, the 7th
One of verifying voltage level and one the 8th verifying voltage level.For example, the first verifying voltage level is to erase to test
It demonstrate,proves level (EV), the second verifying voltage level, third verifying voltage level, the 4th verifying voltage level, the 5th verifying voltage electricity
Flat, the 6th verifying voltage level, the 7th verifying voltage level and the 8th verifying voltage level can for write verification level (PV1,
PV2, PV3, PV4, PV5, PV6, PV7).The rule of correspondence can be stored in TLC storage device or external memory.Due to altogether
40320 kinds of rules of correspondence, it is only necessary to which why two bytes can store the used rule of correspondence.
Later, it in step S208, is write data in a memory array of TLC storage device according to the rule of correspondence.Step
Rapid S208 may include that the next write instruction of a page buffer to TLC storage device and writing data to from page buffer is deposited
Memory array.In some examples, under to page buffer before write instruction, error correction coding can be calculated.
In some examples, before writing data to the array (S208) of TLC storage device, it can be turned according to the rule of correspondence
Change initial data.After initial data conversion, then write data into the page buffer of TLC storage device.This conversion step
Suddenly it can be carried out by controller.Alternatively, this switch process may be implemented in a software management layers, such as quick flashing translation layer or quick flashing
File system.
The example of the write-in processing of the operating method of TLC storage device is provided herein, such as Fig. 5 A~Fig. 5 B illustrated.Such as
Shown in Fig. 5 A, 16 are provided by data to be written.These data include eight kinds of code 000,001,010,011,100,
101,110 and 111.Data include the first write-in page position 252 that will be written into, the second write-in page position 254 that will be written into
And the third write-in page position 256 that will be written into.
Calculate the number of eight kinds of code 000,001,010,011,100,101,110 and 111.Be as a result two codings 000,
Four codings 100, three coding 101, two of coding 011, one of coding 010, one of coding 001, two encode 110, one
Coding 111.That is, will coding from number at most toward be 001 if minimum sequence, 101,000,010,110,011,100,
111。
Here, providing eight verifying voltage level, including the first verifying voltage level, the second verifying voltage level, third
Verifying voltage level, the 4th verifying voltage level, the 5th verifying voltage level, the 6th verifying voltage level, the 7th verifying voltage
Level and the 8th verifying voltage level.In the default rule of correspondence, the first verifying voltage level is corresponding to coding 011, and second tests
It is corresponding to coding 010 to demonstrate,prove voltage level, third verifying voltage level is corresponding to coding 000, and the 4th verifying voltage level is corresponding extremely
Coding 001, the 5th verifying voltage level is corresponding to coding 101, and the 6th verifying voltage level is corresponding to coding 100, the 7th verifying
Voltage level is corresponding to coding 110, and the 8th verifying voltage level is corresponding to coding 111.
In an example, due to number it is most be encoded to coding 001, coding 001 is corresponding to the first verifying voltage electricity
It is flat.Coding 101,000,010,110,011,100 and 111 is respectively corresponding to the second verifying voltage level, third verifying voltage
Level, the 4th verifying voltage level, the 5th verifying voltage level, the 6th verifying voltage level, the 7th verifying voltage level and
Eight verifying voltage level.Then, can will coding 000,001,010,011,100,101,110 and 111 be converted into coding 000,
011,001,100,110,010,101 and 111, and be written into the array of TLC storage device.The result of write-in is shown in Fig. 5 B,
The the second write-in page position 260 of the first write-in page position 258, write-in and the third write-in page position 262 of write-in being wherein written are different from
It original the first write-in page position 252 that will be written into, original the second write-in page position 254 that will be written into and original will be write
The third write-in page position 256 entered.Its demand of user Ke Yi selects the rule of correspondence.
Fig. 6 is the flow chart according to the reading process of the operating method of the TLC storage device of an embodiment.Firstly, in step
Rapid S232 reads the rule of correspondence by controller.In step S234, according to the rule of correspondence from the memory array of TLC storage device
Read data.In the rule of correspondence, the first verifying voltage level, the second verifying voltage level, that sequentially arrange from low to high
Three verifying voltage level, the 4th verifying voltage level, the 5th verifying voltage level, the 6th verifying voltage level, the 7th verifying electricity
Voltage level and the 8th each correspondence of verifying voltage level to the first coding, the second coding, third encode, the 4th encodes, the 5th encodes,
One of 6th coding, the 7th coding and the 8th coding.Later, in step S236, output data.In some examples,
Before output data, from the read data of the memory array of TLC storage device can first by controller, quick flashing translation layer or
Flash file system conversion.
In the above embodiment, data are to have determined.However, in some cases, data may also non-bottom
It is fixed, and may be changed according to the input of user.In next content, TLC storage device will be illustratively provided
One embodiment of operating method.
The flow chart of the write-in processing of the operating method of the TLC storage device of this embodiment according to Fig. 7.This write-in
It handles the first write-in page S302 included the steps that the first write-in page position of the multiple data of write-in to TLC storage device, this is written
Second write-in page position of a little data to TLC storage device the second write-in page step S304 and be written the of these data
The step S306 of page is written to the third of TLC storage device for three write-in page positions.
In step S302, firstly, multiple first write-ins page position of multiple data is provided, such as step S308.These first are write
Entering page position includes coding 0 and coding 1.In step S310, it is each that coding 0 and coding 1 in the first write-in page position are calculated by a controller
From number.In step S312, one the is generated by controller according to coding 0 in the first write-in page position and 1 respective number of coding
One rule of correspondence.Then, in step S314, according to the first write-in page position of first rule of correspondence write-in to the one of TLC storage device
In first write-in page.
In step S304, firstly, multiple second write-ins page position of these data is provided, such as step S316.These second are write
Entering page position includes coding 0 and coding 1.In step S318, under 1 each of coding 0 and coding of the first write-in page position, by controlling
Device calculates 1 respective number of coding 0 and coding in the second write-in page position.In step S320,0 is encoded according in the second write-in page position
And 1 respective number of coding generates one second rule of correspondence by controller.Then, in step S322, according to second rule of correspondence
The second write-in page position of write-in is into one second write-in page of TLC storage device.
In step S306, firstly, multiple thirds write-in page position of these data is provided, such as step S324.These thirds are write
Entering page position includes coding 0 and coding 1.In step S326, write in the coding 0 and 1 each of coding of the first write-in page position and second
Enter under 1 each of coding 0 and coding of page position, 1 respective number of coding 0 and coding in third write-in page position is calculated by controller
Mesh.In step S328, it is corresponding by controller one third of generation that coding 0 and 1 respective number of coding in page position are written according to third
Rule.Then, it in step S330, is write according to the third that third write-in page position to TLC storage device is written in the third rule of correspondence
Enter in page.
The example of write-in processing according to the TLC storage device operating method of this embodiment is provided herein, as Fig. 8 A~
Fig. 8 F illustrated.In this example, 16 are provided by data to be written.In the default rule of correspondence, first is tested
It is corresponding to coding 011 to demonstrate,prove voltage level, the second verifying voltage level is corresponding to coding 010, and third verifying voltage level is corresponding extremely
Coding 000, the 4th verifying voltage level is corresponding to coding 001, and the 5th verifying voltage level is corresponding to coding 101, the 6th verifying
Voltage level is corresponding to coding 100, and the 7th verifying voltage level is corresponded to coding 110, and the 8th verifying voltage level is corresponding to volume
Code 111.
Fig. 8 A is please referred to, provides page position 352 is written by the first of data to be written first.Will be written into first
It includes coding 0 and 1 that page position 352, which is written,.The number of calculation code 0 and coding 1.It as a result is nine codings 0 and seven codings 1.By
It is more than the number of coding 1 in the number of coding 0, is not necessary to convert them.Then, coding 0 is corresponding to one first verifying voltage
Level (EV), coding 1 are corresponding to one the 5th verifying voltage level (PV4).First write-in page position 354 of write-in is shown in Fig. 8 B.
Fig. 8 C is please referred to, the second write-in page position 356 that will be written into is provided.The the second write-in page position that will be written into
356 include coding 0 and 1.The the second write-in page position 356 that will be written into is to be divided into two according to corresponding first write-in page position 354
A group A1 and A2.It calculates the coding 0 of the second write-in page position of the first group A1 and encodes 1 number.It as a result is six codings 0
And three codings 1.Since the number of coding 0 is more than the number of coding 1, by coding 0 and 1 conversion is encoded.Coding 00 after conversion
The first verifying voltage level (EV) is maintained, the coding 01 after conversion is corresponding to third verifying voltage level (PV2).Calculate second
The coding 0 of group A2 and the number of coding 1.It as a result is four codings 0 and three codings 1.Since the number of coding 0 is more than coding
1 number is not necessary to 1 conversion of the coding 0 of the second group A2 and coding.Coding 10 maintains the 5th verifying voltage level (PV4),
Coding 11 is corresponding to the 7th verifying voltage level (PV6).Second write-in page position 358 of write-in is shown in Fig. 8 D.
Fig. 8 E is please referred to, the third write-in page position 360 that will be written into is provided.The third write-in page position that will be written into
360 include coding 0 and 1.The third write-in page position 360 that will be written into is according to corresponding first write-in page position 354 and to correspond to
Second write-in page position 358 be divided into four groups B1, B2, B3 and B4.Calculate the coding 0 of the third write-in page position of the first group B1
And the number of coding 1.It as a result is four codings 1 and two codings 0.Since the number of coding 1 is more than the number of coding 0, it is not required to
They are converted.Coding 001 maintains the first verifying voltage level (EV), and coding 000 is corresponding to the second verifying voltage level
(PV1).It calculates the coding 0 of the second group B2 and encodes 1 number.It as a result is two codings 0 and a coding 1.Due to coding 0
Number more than coding 1 number, be not required to convert them.Coding 010 maintains third verifying voltage level (PV2), encodes
011 is corresponding to the 4th verifying voltage level (PV3).It calculates the coding 0 of third group B3 and encodes 1 number.It as a result is three
Coding 0 and a coding 1.Since the number of coding 0 is more than the number for encoding 1, by 1 turn of the coding 0 of third group B3 and coding
It changes.Coding 101 after conversion maintains the 5th verifying voltage level (PV4), and the coding 100 after conversion is corresponding to one the 6th verifying
Voltage level (PV5).It calculates the coding 0 of the 4th group B4 and encodes 1 number.It as a result is two codings 1 and a coding 0.
Since the number of coding 1 is more than the number of coding 0, the coding 1 of the 4th group B4 and coding 0 are converted.Coding 110 after conversion
The 7th verifying voltage level (PV6) is maintained, the coding 111 after conversion is corresponding to the 8th verifying voltage level (PV7).Write-in
Third write-in page position 362 is shown in Fig. 8 F.
The rule of correspondence can be stored in TLC storage device or external memory.The rule of correspondence of first write-in page needs one
A position, the rule of correspondence of the second write-in page need two positions, and the rule of correspondence that page is written in third needs four positions.Always altogether,
As long as using a byte.
The flow chart of the reading process of the operating method of the TLC storage device of this embodiment according to Fig. 9.In step
S332 obtains first rule of correspondence, second rule of correspondence and the third rule of correspondence by controller.In step S334, according to first
The rule of correspondence, second rule of correspondence and the third rule of correspondence read the first write-in page position of data from TLC storage device, second write
Enter page position and third write-in page position.Later, in step S336, output data.In some examples, it is only necessary to the first write-in page
Page position is written in position, the second write-in page position or third.At this point, only obtaining corresponding first rule of correspondence, the second correspondence by controller
Rule or the third rule of correspondence, and the position needed is only read according to the corresponding rule of correspondence.
In the above-described embodiment, because of the mapping of storage unit, reduce and slow storage unit is written to higher threshold
The probability of threshold voltage state (such as the 4th verifying voltage level or the 8th verifying voltage level).Therefore, it reduces by storing slowly
The interference of write-in caused by unit.In addition, also reducing as by interference caused by voltage Vpass.According to above-described embodiment
Operating method can be used for flash memory devices.Although above-described embodiment is other storages by taking MLC and TLC storage device as an example
Device (such as quadravalence storage type (Quad-Level-Cell, QLC) storage device) can also take similar operating method.Or
Person, these methods can be used for advanced storage device, such as phase change RAM (PRAM) or Ovonics unified memory
(PCM)。
Although however, it is not to limit the invention in conclusion the present invention has been disclosed as a preferred embodiment.This hair
Bright those of ordinary skill in the art, without departing from the spirit and scope of the present invention, when various changes can be made
With retouching.Therefore, subject to protection scope of the present invention ought be defined depending on appended claims range.
Claims (9)
1. a kind of operating method of storage device, comprising:
A storage device is write data by using the rule of correspondence, comprising:
Multiple data are provided to a controller, these data include multiple codings；
These are calculated by the controller and encodes respective number；
Respective number is encoded according to these, and rule of correspondence is generated by the controller, wherein in the rule of correspondence, these volumes
Each correspondence of code is to one of the multiple verifying voltage level sequentially arranged from low to high；And
These data are written into a memory array of the storage device according to the rule of correspondence.
2. operating method according to claim 1, wherein these codings include the first coding, the second coding, third coding
And the 4th coding, first coding, second coding, third coding and the 4th two are encoded to, and wherein in the correspondence
In rule, first coding, second coding, third coding and the 4th each correspondence of coding to sequentially arranging from low to high
First verifying voltage level, the second verifying voltage level, third verifying voltage level and the 4th verifying voltage level wherein it
One.
3. operating method according to claim 2, wherein in the rule of correspondence, this first coding, this second coding,
Number maximum one is corresponding to the first verifying voltage level in third coding and the 4th coding.
4. operating method according to claim 2, wherein in the rule of correspondence, this first coding, this second coding,
Number maximum one is corresponding to the second verifying voltage level in third coding and the 4th coding.
5. operating method according to claim 1, wherein these codings are encoded including the first coding, second, third encodes,
4th coding, the 5th coding, the 6th coding, the 7th coding and the 8th coding, first coding, second coding, the third are compiled
Code, the 4th coding, the 5th coding, the 6th coding, the 7th coding and the 8th are encoded to three, and wherein right at this
Answer in rule, this first coding, this second coding, the third coding, the 4th coding, the 5th coding, the 6th coding, should
7th coding and the 8th each correspondence of coding are electric to the first verifying voltage level, the second verifying voltage sequentially arranged from low to high
Flat, third verifying voltage level, the 4th verifying voltage level, the 5th verifying voltage level, the 6th verifying voltage level, the 7th test
Demonstrate,prove one of voltage level and the 8th verifying voltage level.
6. operating method according to claim 1, further includes:
Read the storage device, comprising:
The rule of correspondence is obtained by the controller；
These data are read from the memory array of the storage device according to the rule of correspondence, wherein in the rule of correspondence,
These each correspondences of verifying voltage level sequentially arranged from low to high to these coding one of；And
Export these data.
7. a kind of operating method of storage device, comprising:
A storage device is write data by using the rule of correspondence, comprising:
There is provided multiple first write-ins page position of multiple data, wherein these the first write-in page positions include coding 0 and coding 1；
The coding 0 and respective number of coding 1 in these the first write-in page positions are calculated by a controller；
One first is generated by the controller and is corresponded to according to the coding 0 and the respective number of coding 1 in these the first write-in page positions
Rule；
These first write-in page positions are written into one first write-in page of the storage device according to first rule of correspondence；
There is provided multiple second write-ins page position of these data, wherein these the second write-in page positions include coding 0 and coding 1；
Under the coding 0 of these the first write-in page positions and 1 each of coding, these the second write-in pages are calculated by the controller
The coding 0 and the respective number of coding 1 in position；
One second is generated by the controller and is corresponded to according to the coding 0 and the respective number of coding 1 in these the second write-in page positions
Rule；
These second write-in page positions are written into one second write-in page of the storage device according to second rule of correspondence；
There is provided multiple thirds write-in page position of these data, wherein it includes coding 0 and coding 1 that page position, which is written, in these thirds；
These first write-in page positions the coding 0 and 1 each of coding and these second write-in page positions the coding 0 and should
It encodes under 1 each, the coding 0 and respective number of coding 1 in these thirds write-in page position is calculated by the controller；
It is corresponding by the controller one third of generation that the coding 0 and the respective number of coding 1 in page position is written according to these thirds
Rule；And
These thirds are written according to the third rule of correspondence, page position is written into the third write-in page of the storage device.
8. operating method according to claim 7, further includes:
Read the storage device, comprising:
First rule of correspondence, second rule of correspondence and the third rule of correspondence are obtained by the controller；
These data are read from the storage device according to first rule of correspondence, second rule of correspondence and the third rule of correspondence
These first write-in page positions, these second write-in page positions and these thirds be written page position；And
Export these data.
9. operating method according to claim 7, further includes:
Read the storage device, comprising:
First rule of correspondence, second rule of correspondence or the third rule of correspondence are obtained by the controller；
According to first rule of correspondence, second rule of correspondence or the third rule of correspondence from the storage device read it is corresponding this
Page position is written in these the first write-in page position, these the second write-in page positions or these thirds of a little data；And
Export these the first write-in page positions, these the second write-in page positions or these thirds write-in page position of these data.
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| CN1902710A (en) * | 2003-10-29 | 2007-01-24 | 赛芬半导体有限公司 | Method, circuit and system for read error detection in a non-volatile memory array |
| CN101231888A (en) * | 2007-01-23 | 2008-07-30 | 海力士半导体有限公司 | Method of programming data in a flash memory device |
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| TWI307100B (en) * | 2006-11-07 | 2009-03-01 | Macronix Int Co Ltd | Memory and method for reading error checking thereof |
| KR100888842B1 (en) * | 2007-06-28 | 2009-03-17 | 삼성전자주식회사 | Flash memory device optimizing read voltage and method for optimizing read voltage thereof |
| US8953386B2 (en) * | 2012-10-25 | 2015-02-10 | Sandisk Technologies Inc. | Dynamic bit line bias for programming non-volatile memory |
| US8929142B2 (en) * | 2013-02-05 | 2015-01-06 | Sandisk Technologies Inc. | Programming select gate transistors and memory cells using dynamic verify level |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1902710A (en) * | 2003-10-29 | 2007-01-24 | 赛芬半导体有限公司 | Method, circuit and system for read error detection in a non-volatile memory array |
| CN101231888A (en) * | 2007-01-23 | 2008-07-30 | 海力士半导体有限公司 | Method of programming data in a flash memory device |
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