CN105624680A - Efficient copper etching agent - Google Patents
Efficient copper etching agent Download PDFInfo
- Publication number
- CN105624680A CN105624680A CN201510990431.1A CN201510990431A CN105624680A CN 105624680 A CN105624680 A CN 105624680A CN 201510990431 A CN201510990431 A CN 201510990431A CN 105624680 A CN105624680 A CN 105624680A
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- Prior art keywords
- ammonium
- copper
- copper etchant
- alkali metal
- efficiency copper
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/32—Alkaline compositions
- C23F1/34—Alkaline compositions for etching copper or alloys thereof
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- ing And Chemical Polishing (AREA)
Abstract
The invention belongs to the technical field of metal etching, and relates to an efficient copper etching agent. The efficient copper etching agent is prepared from, by weight, 0.3%-0.4% of tervalent ferric salt based on iron, 0.2%-3% of ammonium salt based on nitrogen, 6%-15% of organic alkali and the balance deionized water. The alkalescence of a solution is maintained through compounding of the ammonium salt and the organic alkali, copper etching is promoted, and an oxidization layer is not damaged. Ammonium is slowly released to be subjected to complexing with bivalent copper ions, reaction equilibrium shifting is promoted, copper etching is accelerated, and a copper etched surface is prevented from becoming rough.
Description
Technical field
The present invention relates to metal etch technical field, do not corrode the high-efficiency copper etchant of more than the a kind metal-oxide comprised in aluminum, zinc, stannum, indium and gallium particularly to a kind of energy fast-etching copper.
Background technology
In recent years, because of the requirement of large screen, high-precision refinement, there is the tendency become more meticulous in the electrode wiring of field of display, more carefully, more complicated wiring force electrode seek low resistance outlet to the less material of resistivity. The aluminum conventional due to the resistivity ratio of copper is lower, therefore manufactures, as main material, the developing direction that electrode becomes following using copper.
In current etchant market, the prostatitis in this industry is walked by Japan, and due to their starting relatively early, technology is comparatively ripe, and the domestic market of 70% is all occupied by the chemical company of MAG of Japan and Rhizoma Sparganii gas chemical company. These imported products can effectively remove copper face foul, and the copper face after etching is uniform, and can form extremely tiny convex-concave surface, and this plays a crucial role to producing high-quality wiring board. And domestic etchant ubiquity etching is uneven, go the defects such as dirty ability, surface finish are bad, Ra value is low, it is impossible to well meet and produce needs.
Simultaneously, the development of a series of metal oxide semiconductor materials such as tin indium oxide (ITO), indium zinc oxide (IZO), indium gallium zinc (IGZO) makes electrode structure more complicate, and copper is likely to mixed on circuit boards with above metal-oxide. Therefore, when being etched manufacturing circuit board, etchant needs optionally etch electrode material, and namely etchant needs when etched copper to avoid etch oxide layer. For the research of this novel copper etchant, MEC A/S of Japan has applied for invention " etchant and use its engraving method " (grant number: CN102560497B) in 2011 in China. But also have some to be short of in etching speed, and it is reacted to last layers of copper surface roughness and can be gradually increased or even affect properties of product.
The present invention is contemplated to provide a kind of high-efficiency copper etchant.
Summary of the invention
Present invention is primarily targeted at and provide a kind of energy fast-etching copper not corrode the high-efficiency copper etchant of more than the a kind metal-oxide comprised in aluminum, zinc, stannum, indium and gallium.
The present invention is achieved through the following technical solutions above-mentioned purpose: a kind of high-efficiency copper etchant, comprises and is calculated as the trivalent iron salt of 0.3-4wt% with ferrum, is calculated as the deionized water of the ammonium salt of 0.2-3wt%, the organic base of 6-15wt% and surplus with nitrogen.
Concrete, described trivalent iron salt one in iron sulfate, iron chloride, ferric bromide, ferric nitrate.
Concrete, described ammonium salt is selected from one or more in ammonium sulfate, ammonium hydrogen sulfate, ammonium carbonate, ammonium hydrogen carbonate, ammonium nitrate, ammonium chloride, ammonium bromide, carboxylic acid ammonium.
Concrete, described organic base is selected from one or more in aminated compounds, glyoxaline compound, pyrazole compound, alkali metal alcoholates, alkali metal carboxylate.
Further, described alkali metal alcoholates is generated by monohydric alcohol or the polyhydric alcohol of sodium or potassium and C1-C3.
Further, described alkali metal carboxylate is generated by monocarboxylic acid or the polybasic carboxylic acid of sodium or potassium and C1-C4.
Adopting technique scheme, technical solution of the present invention provides the benefit that:
1, the present invention is by the composite maintenance solution alkalescence of ammonium salt with organic base, promotes the etch of copper and does not damage oxide layer;
2, slow release ammonia and bivalent cupric ion complexation, promotes that molecular balance moves, and brings copper etching to accelerate, it is prevented that copper corrosion face becomes coarse.
Detailed description of the invention
Dominant response in copper etching is:
��2Fe3++Cu��2Fe2++Cu2+;
The copper ion wherein generated participates in side reaction:
Constantly consuming along with iron ion and being continuously generated of copper ion, 1. reaction slows down gradually, and reacts and 2. accelerate gradually, will eventually reach balance on layers of copper surface, but layers of copper surface so can be made to become coarse gradually, and this will affect product electric conductivity.
Often with alkalescence after organic base hydrolysis, and there is the balancing response generating ammonia in ammonium salt in weakly alkaline solution:
And under alkaline environment, ammonia can quickly with copper ion generation complex reaction:
��Cu2++4NH3��H2O��[Cu(NH3)4]2++4H2O;
Owing to reacting 4., speed is quickly, therefore in etching, copper ion and ammonia can be consumed soon, therefore react forward reaction 2. to be suppressed, and react should be promoted antithesis 3., the pH value that 3. reaction brings reduces problem and can be cushioned by the hydrolysis of organic base again, such reactant liquor can keep alkalescence more for a long time, it is to avoid oxide layer is corroded.
Below in conjunction with specific embodiment, the present invention is described in further detail.
The copper erosion liquid proportioning of embodiment 1-10 is in Table 1:
Table 1
Being processed by sheet material embodiment 1-10 gained copper etchant of the same race, simultaneously using the sheet material of the copper etchant process with reference to Chinese invention CN102560497B configuration as reference examples, carry out parameter testing, result is in Table 2.
Table 2
As seen from the above table, copper etchant of the present invention has good selectivity equally, and to the maintenance effect above of the etching speed of copper and roughness more preferably.
Above-described is only some embodiments of the present invention. For the person of ordinary skill of the art, without departing from the concept of the premise of the invention, it is also possible to making some deformation and improvement, these broadly fall into protection scope of the present invention.
Claims (6)
1. a high-efficiency copper etchant, it is characterised in that: comprise and be calculated as the trivalent iron salt of 0.3-4wt% with ferrum, be calculated as the deionized water of the ammonium salt of 0.2-3wt%, the organic base of 6-15wt% and surplus with nitrogen.
2. high-efficiency copper etchant according to claim 1, it is characterised in that: described trivalent iron salt one in iron sulfate, iron chloride, ferric bromide, ferric nitrate.
3. high-efficiency copper etchant according to claim 1, it is characterised in that: described ammonium salt is selected from one or more in ammonium sulfate, ammonium hydrogen sulfate, ammonium carbonate, ammonium hydrogen carbonate, ammonium nitrate, ammonium chloride, ammonium bromide, carboxylic acid ammonium.
4. high-efficiency copper etchant according to claim 1, it is characterised in that: described organic base is selected from one or more in aminated compounds, glyoxaline compound, pyrazole compound, alkali metal alcoholates, alkali metal carboxylate.
5. high-efficiency copper etchant according to claim 4, it is characterised in that: described alkali metal alcoholates is generated by monohydric alcohol or the polyhydric alcohol of sodium or potassium and C1-C3.
6. high-efficiency copper etchant according to claim 4, it is characterised in that: described alkali metal carboxylate is generated by monocarboxylic acid or the polybasic carboxylic acid of sodium or potassium and C1-C4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510990431.1A CN105624680A (en) | 2015-12-25 | 2015-12-25 | Efficient copper etching agent |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510990431.1A CN105624680A (en) | 2015-12-25 | 2015-12-25 | Efficient copper etching agent |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105624680A true CN105624680A (en) | 2016-06-01 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510990431.1A Pending CN105624680A (en) | 2015-12-25 | 2015-12-25 | Efficient copper etching agent |
Country Status (1)
| Country | Link |
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| CN (1) | CN105624680A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102230178A (en) * | 2011-04-29 | 2011-11-02 | 西安东旺精细化学有限公司 | Etching liquid composition for nickel or nickel/copper alloy |
| CN103695908A (en) * | 2013-12-27 | 2014-04-02 | 东莞市广华化工有限公司 | Novel organic alkali micro-etching solution |
| CN104233302A (en) * | 2014-09-15 | 2014-12-24 | 南通万德科技有限公司 | Etching liquid and application thereof |
-
2015
- 2015-12-25 CN CN201510990431.1A patent/CN105624680A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102230178A (en) * | 2011-04-29 | 2011-11-02 | 西安东旺精细化学有限公司 | Etching liquid composition for nickel or nickel/copper alloy |
| CN103695908A (en) * | 2013-12-27 | 2014-04-02 | 东莞市广华化工有限公司 | Novel organic alkali micro-etching solution |
| CN104233302A (en) * | 2014-09-15 | 2014-12-24 | 南通万德科技有限公司 | Etching liquid and application thereof |
Non-Patent Citations (1)
| Title |
|---|
| R. S. KHANDPUR: "《印制电路板——设计、制造、装配与测试》", 29 February 2008, 机械工业出版社 * |
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Application publication date: 20160601 |