CN105623526A - Chemical mechanical polishing liquid and preparation method thereof - Google Patents
Chemical mechanical polishing liquid and preparation method thereof Download PDFInfo
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- CN105623526A CN105623526A CN201610086885.0A CN201610086885A CN105623526A CN 105623526 A CN105623526 A CN 105623526A CN 201610086885 A CN201610086885 A CN 201610086885A CN 105623526 A CN105623526 A CN 105623526A
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- chemical mechanical
- mechanical polishing
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- polishing liquid
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
- C23F3/06—Heavy metals with acidic solutions
Abstract
The invention discloses a chemical mechanical polishing liquid and a preparation method thereof. The chemical mechanical polishing liquid is prepared from, by weight, 15-30 parts of phosphoric acid, 10-20 parts of sodium tetraborate, 10-20 parts of sodium silicate, 10-20 parts of sodium bicarbonate, 10-20 parts of sodium citrate, 25-45 parts of deionized water, 10-15 parts of talcum powder, 8-10 parts of calcium carbonate, 1-10 parts of oxidizing agent, 5-10 parts of liquid paraffin, 2-10 parts of corrosion inhibitor, 1-10 parts of surfactant, 1-9 parts of pH regulator, 1-3 parts of kaolin, 1-2 parts of diatomite, 1-2 parts of lamellar mica powder and 1-2 parts of hollow glass beads. The raw materials are stirred, heated and mixed to obtain the chemical mechanical polishing liquid. The chemical mechanical polishing liquid is effective in polishing, harmless to surfaces of semiconductor chips, safe, nontoxic, free of harmful gases and capable of increasing polishing speed and reducing surface contaminants of polishes materials.
Description
Technical field
The present invention relates to semiconductor surface process field, specifically a kind of chemical mechanical polishing liquid and preparation method thereof.
Background technology
Chemical Mechanical Polishing Technique is one of key technology of semiconductor wafer surface processing, and it is surface flattening for each stage of ic manufacturing process, and polishing efficiency and crudy are had important impact by polishing fluid, but owing to having significantly high technology requirement, current business-like polishing fluid formula is in the state of maintaining complete secrecy, and is concentrated mainly on the U.S., Japan, Korea S. This also leads in China's semiconductor silicon polished silicon wafer processing, and the polishing fluid overwhelming majority used will lean on import. Although China has evolved to the enterprise of tens at present in polishing fluid industry, but really set foot in semi-conductor silicon chip polishing fluid manufacture, the enterprise of research and development aspect little. No matter be in product quality or in market share, domestic enterprise all show with external producer have quite poor from.
Summary of the invention
It is an object of the invention to provide a kind of chemical mechanical polishing liquid and preparation method thereof, with the problem solving to propose in above-mentioned background technology.
For achieving the above object, the present invention provides following technical scheme:
A kind of chemical mechanical polishing liquid, includes according to the raw material of weight portion: phosphatase 11 5-30 part, sodium tetraborate 10-20 part, sodium silicate 10-20 part, sodium bicarbonate 10-20 part, sodium citrate 10-20 part, deionized water 25-45 part, Pulvis Talci 10-15 part, calcium carbonate 8-10 part, oxidant 1-10 part, liquid paraffin 5-10 part, corrosion inhibiter 2-10 part, surfactant 1-10 part, pH adjusting agent 1-9 part, Kaolin 1-3 part, kieselguhr 1-2 part, mica powder 1-2 part of lamellar structure, hollow glass micropearl 1-2 part.
As the further scheme of the present invention: include according to the raw material of weight portion: phosphatase 11 5-30 part, sodium tetraborate 15 parts, sodium silicate 15 parts, sodium bicarbonate 15 parts, sodium citrate 15 parts, deionized water 35 parts, Pulvis Talci 12.5 parts, calcium carbonate 9 parts, oxidant 5.5 parts, liquid paraffin 7.5 parts, corrosion inhibiter 6 parts, 5.5 parts of surfactant, pH adjusting agent 5 parts, Kaolin 2 parts, 1.5 parts of kieselguhr, the mica powder 1.5 parts of lamellar structure, hollow glass micropearl 1.5 parts.
As the present invention further scheme: described oxidant is potassium permanganate.
As the present invention further scheme: described pH adjusting agent is sodium carbonate and acetic acid.
As the present invention further scheme: described corrosion inhibiter is the mixed solution of di-o-tolyl thiourea, triethylamine and tripropyl amine (TPA).
As the present invention further scheme: the preparation method of described chemical mechanical polishing liquid, comprise the following steps:
(1) phosphoric acid, sodium tetraborate, sodium silicate, sodium bicarbonate, sodium citrate, Pulvis Talci, calcium carbonate, liquid paraffin, corrosion inhibiter, Kaolin, kieselguhr, the mica powder of lamellar structure, hollow glass micropearl are dissolved in deionized water, heating in water bath limit, limit magnetic agitation;
(2) to step (1) prepare solution in add oxidant, corrosion inhibiter, surfactant, be naturally down to room temperature after stirring and evenly mixing;
(3) to step (2) prepare solution in add appropriate pH adjusting agent, pH value of solution is adjusted to 7.5-8.9; Described chemical mechanical polishing liquid can be obtained
Compared with prior art, the invention has the beneficial effects as follows: polishing effect is good, polishing speed improves; To semiconductor chip surface fanout free region; Safety non-toxic, without harmful gas; The surface contaminant of polished material can be reduced.
Detailed description of the invention
Below in conjunction with the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described embodiment is only a part of embodiment of the present invention, rather than whole embodiments. Based on the embodiment in the present invention, the every other embodiment that those of ordinary skill in the art obtain under not making creative work premise, broadly fall into the scope of protection of the invention.
Embodiment 1
A kind of chemical mechanical polishing liquid, includes according to the raw material of weight portion: phosphatase 11 5 parts, sodium tetraborate 10 parts, sodium silicate 10 parts, sodium bicarbonate 10 parts, sodium citrate 10 parts, deionized water 25 parts, Pulvis Talci 10 parts, calcium carbonate 8 parts, oxidant 1 part, liquid paraffin 5 parts, corrosion inhibiter 2 parts, 1 part of surfactant, pH adjusting agent 1 part, Kaolin 1 part, 1 part of kieselguhr, the mica powder 1 part of lamellar structure, hollow glass micropearl 1 part.
The preparation method of described chemical mechanical polishing liquid, comprises the following steps:
(1) phosphoric acid, sodium tetraborate, sodium silicate, sodium bicarbonate, sodium citrate, Pulvis Talci, calcium carbonate, liquid paraffin, corrosion inhibiter, Kaolin, kieselguhr, the mica powder of lamellar structure, hollow glass micropearl are dissolved in deionized water, heating in water bath limit, limit magnetic agitation;
(2) to step (1) prepare solution in add potassium permanganate, di-o-tolyl thiourea, triethylamine, tripropyl amine (TPA), surfactant, be naturally down to room temperature after stirring and evenly mixing;
(3) to step (2) prepare solution in add appropriate sodium carbonate, pH value of solution is adjusted to 7.5; Described chemical mechanical polishing liquid can be obtained.
Embodiment 2
A kind of chemical mechanical polishing liquid, includes according to the raw material of weight portion: phosphatase 11 5-30 part, sodium tetraborate 15 parts, sodium silicate 15 parts, sodium bicarbonate 15 parts, sodium citrate 15 parts, deionized water 35 parts, Pulvis Talci 12.5 parts, calcium carbonate 9 parts, oxidant 5.5 parts, liquid paraffin 7.5 parts, corrosion inhibiter 6 parts, 5.5 parts of surfactant, pH adjusting agent 5 parts, Kaolin 2 parts, 1.5 parts of kieselguhr, the mica powder 1.5 parts of lamellar structure, hollow glass micropearl 1.5 parts.
The preparation method of described chemical mechanical polishing liquid, comprises the following steps:
(1) phosphoric acid, sodium tetraborate, sodium silicate, sodium bicarbonate, sodium citrate, Pulvis Talci, calcium carbonate, liquid paraffin, corrosion inhibiter, Kaolin, kieselguhr, the mica powder of lamellar structure, hollow glass micropearl are dissolved in deionized water, heating in water bath limit, limit magnetic agitation;
(2) solution prepared to step (1) adds potassium permanganate, di-o-tolyl thiourea, triethylamine and tripropyl amine (TPA), surfactant, after stirring and evenly mixing, be naturally down to room temperature;
(3) to step (2) prepare solution in add appropriate acetic acid, pH value of solution is adjusted to 8; Described chemical mechanical polishing liquid can be obtained.
Embodiment 3
A kind of chemical mechanical polishing liquid, includes according to the raw material of weight portion: phosphoric acid 30 parts, sodium tetraborate 20 parts, sodium silicate 20 parts, sodium bicarbonate 20 parts, sodium citrate 20 parts, deionized water 45 parts, Pulvis Talci 15 parts, calcium carbonate 10 parts, oxidant 10 parts, liquid paraffin 10 parts, corrosion inhibiter 10 parts, 10 parts of surfactant, pH adjusting agent 9 parts, Kaolin 3 parts, 2 parts of kieselguhr, the mica powder 2 parts of lamellar structure, hollow glass micropearl 2 parts.
The preparation method of described chemical mechanical polishing liquid, comprises the following steps:
(1) phosphoric acid, sodium tetraborate, sodium silicate, sodium bicarbonate, sodium citrate, Pulvis Talci, calcium carbonate, liquid paraffin, corrosion inhibiter, Kaolin, kieselguhr, the mica powder of lamellar structure, hollow glass micropearl are dissolved in deionized water, heating in water bath limit, limit magnetic agitation;
(2) solution prepared to step (1) adds potassium permanganate, di-o-tolyl thiourea, triethylamine and tripropyl amine (TPA), surfactant, after stirring and evenly mixing, be naturally down to room temperature;
(3) to step (2) prepare solution in add appropriate acetic acid, pH value of solution is adjusted to 8.9; Described chemical mechanical polishing liquid can be obtained.
It is obvious to a person skilled in the art that the invention is not restricted to the details of above-mentioned one exemplary embodiment, and when without departing substantially from the spirit of the present invention or basic feature, it is possible to realize the present invention in other specific forms. Therefore, no matter from which point, embodiment all should be regarded as exemplary, and be nonrestrictive, the scope of the invention rather than described above limits, it is intended that all changes in the implication of the equivalency dropping on claim and scope included in the present invention.
In addition, it is to be understood that, although this specification is been described by according to embodiment, but not each embodiment only comprises an independent technical scheme, this narrating mode of description is only for clarity sake, description should be made as a whole by those skilled in the art, and the technical scheme in each embodiment through appropriately combined, can also form other embodiments that it will be appreciated by those skilled in the art that.
Claims (6)
1. a chemical mechanical polishing liquid, it is characterized in that, include according to the raw material of weight portion: phosphatase 11 5-30 part, sodium tetraborate 10-20 part, sodium silicate 10-20 part, sodium bicarbonate 10-20 part, sodium citrate 10-20 part, deionized water 25-45 part, Pulvis Talci 10-15 part, calcium carbonate 8-10 part, oxidant 1-10 part, liquid paraffin 5-10 part, corrosion inhibiter 2-10 part, surfactant 1-10 part, pH adjusting agent 1-9 part, Kaolin 1-3 part, kieselguhr 1-2 part, mica powder 1-2 part of lamellar structure, hollow glass micropearl 1-2 part.
2. chemical mechanical polishing liquid according to claim 1, it is characterized in that, include according to the raw material of weight portion: phosphatase 11 5-30 part, sodium tetraborate 15 parts, sodium silicate 15 parts, sodium bicarbonate 15 parts, sodium citrate 15 parts, deionized water 35 parts, Pulvis Talci 12.5 parts, calcium carbonate 9 parts, oxidant 5.5 parts, liquid paraffin 7.5 parts, corrosion inhibiter 6 parts, 5.5 parts of surfactant, pH adjusting agent 5 parts, Kaolin 2 parts, 1.5 parts of kieselguhr, the mica powder 1.5 parts of lamellar structure, hollow glass micropearl 1.5 parts.
3. chemical mechanical polishing liquid according to claim 1 and 2, it is characterised in that described oxidant is potassium permanganate.
4. chemical mechanical polishing liquid according to claim 1 and 2, it is characterised in that described pH adjusting agent is sodium carbonate and acetic acid.
5. chemical mechanical polishing liquid according to claim 1 and 2, it is characterised in that described corrosion inhibiter is the mixed solution of di-o-tolyl thiourea, triethylamine and tripropyl amine (TPA).
6. one kind as arbitrary in claim 1-5 as described in the preparation method of chemical mechanical polishing liquid, it is characterised in that comprise the following steps:
(1) phosphoric acid, sodium tetraborate, sodium silicate, sodium bicarbonate, sodium citrate, Pulvis Talci, calcium carbonate, liquid paraffin, corrosion inhibiter, Kaolin, kieselguhr, the mica powder of lamellar structure, hollow glass micropearl are dissolved in deionized water, heating in water bath limit, limit magnetic agitation;
(2) to step (1) prepare solution in add oxidant, corrosion inhibiter, surfactant, be naturally down to room temperature after stirring and evenly mixing;
(3) to step (2) prepare solution in add appropriate pH adjusting agent, pH value of solution is adjusted to 7.5-8.9; Described chemical mechanical polishing liquid can be obtained.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610086885.0A CN105623526A (en) | 2016-02-16 | 2016-02-16 | Chemical mechanical polishing liquid and preparation method thereof |
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| CN201610086885.0A CN105623526A (en) | 2016-02-16 | 2016-02-16 | Chemical mechanical polishing liquid and preparation method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106995662A (en) * | 2017-04-27 | 2017-08-01 | 苏州市智诚光学科技有限公司 | A kind of polishing powder polished used in ultra-thin glass eyeglass process and preparation method thereof |
| CN112339718A (en) * | 2020-11-26 | 2021-02-09 | 上海釉车环保科技有限公司 | Waterless car washing process |
| EP4039760A4 (en) * | 2019-09-30 | 2023-08-30 | Fujimi Incorporated | Polishing composition |
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| US20060118760A1 (en) * | 2004-12-03 | 2006-06-08 | Yang Andy C | Slurry composition and methods for chemical mechanical polishing |
| WO2006076857A1 (en) * | 2005-01-19 | 2006-07-27 | Anji Microelectronics (Shanghai) Co., Ltd | Cmp polishing system and abrasive solution |
| CN103436183A (en) * | 2013-08-31 | 2013-12-11 | 青岛承天伟业机械制造有限公司 | Environment-friendly chemico-mechanical polishing liquid for dielectric layer materials |
| CN104046262A (en) * | 2014-06-26 | 2014-09-17 | 青岛宝泰新能源科技有限公司 | Antiseptic and anti-friction mechanical equipment polishing solution |
| CN104046266A (en) * | 2014-06-26 | 2014-09-17 | 青岛宝泰新能源科技有限公司 | Corrosion-free anti-oxidation mechanical equipment polishing solution |
| CN104046259A (en) * | 2014-06-26 | 2014-09-17 | 青岛宝泰新能源科技有限公司 | Semiconductor polishing agent |
| CN104059540A (en) * | 2014-06-22 | 2014-09-24 | 青岛祥海电子有限公司 | Anticorrosive equipment polishing solution |
| CN104293207A (en) * | 2014-09-25 | 2015-01-21 | 无锡康柏斯机械科技有限公司 | Chemico-mechanical polishing liquid and preparation method thereof |
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- 2016-02-16 CN CN201610086885.0A patent/CN105623526A/en active Pending
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| US20060118760A1 (en) * | 2004-12-03 | 2006-06-08 | Yang Andy C | Slurry composition and methods for chemical mechanical polishing |
| WO2006076857A1 (en) * | 2005-01-19 | 2006-07-27 | Anji Microelectronics (Shanghai) Co., Ltd | Cmp polishing system and abrasive solution |
| CN103436183A (en) * | 2013-08-31 | 2013-12-11 | 青岛承天伟业机械制造有限公司 | Environment-friendly chemico-mechanical polishing liquid for dielectric layer materials |
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| CN104293207A (en) * | 2014-09-25 | 2015-01-21 | 无锡康柏斯机械科技有限公司 | Chemico-mechanical polishing liquid and preparation method thereof |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106995662A (en) * | 2017-04-27 | 2017-08-01 | 苏州市智诚光学科技有限公司 | A kind of polishing powder polished used in ultra-thin glass eyeglass process and preparation method thereof |
| EP4039760A4 (en) * | 2019-09-30 | 2023-08-30 | Fujimi Incorporated | Polishing composition |
| CN112339718A (en) * | 2020-11-26 | 2021-02-09 | 上海釉车环保科技有限公司 | Waterless car washing process |
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