CN105609589B - Suitable for the preparation method of the inorganic semiconductor film functional unit of transfer - Google Patents
Suitable for the preparation method of the inorganic semiconductor film functional unit of transfer Download PDFInfo
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- CN105609589B CN105609589B CN201610065321.9A CN201610065321A CN105609589B CN 105609589 B CN105609589 B CN 105609589B CN 201610065321 A CN201610065321 A CN 201610065321A CN 105609589 B CN105609589 B CN 105609589B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 59
- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- 238000012546 transfer Methods 0.000 title claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 45
- 239000000758 substrate Substances 0.000 claims description 26
- 238000005516 engineering process Methods 0.000 claims description 22
- 239000007788 liquid Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 11
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
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- 238000001039 wet etching Methods 0.000 claims description 4
- 229910005542 GaSb Inorganic materials 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- 239000004642 Polyimide Substances 0.000 claims description 2
- 238000005253 cladding Methods 0.000 claims description 2
- 229910052681 coesite Inorganic materials 0.000 claims description 2
- 229910052906 cristobalite Inorganic materials 0.000 claims description 2
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- 229920001721 polyimide Polymers 0.000 claims description 2
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- 229910052594 sapphire Inorganic materials 0.000 claims description 2
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30608—Anisotropic liquid etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30612—Etching of AIIIBV compounds
- H01L21/30617—Anisotropic liquid etching
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The invention discloses a kind of preparation method for the inorganic semiconductor film functional unit for being applied to transfer, the preparation method includes：It is prepared by inorganic semiconductor epitaxial wafer of the growth with sacrifice layer, Legacy Function Unit；Sacrifice layer undercutting；Coating flexible polymeric material and its graphical；Corrode sacrifice layer；Complete to prepare suitable for the ultra-thin inorganic semiconductor functional unit of transfer.Inorganic semiconductor functional unit prepared by the present invention have the advantages that small thickness, structurally ordered controllable, reproducible, low manufacture cost, it is simple to operate and be easy to transfer.
Description
Technical field
It is specifically that one kind is based on inorganic semiconductor material and flexibility the invention belongs to semiconductor devices and micro-nano technology field
The preparation method of the semiconductor functional unit device of polymeric material.
Background technology
Extending flexible inorganic integrated device breaks through the bottle that conventional rigid inorganic device can not be with human body flexible organization integration management
Neck, integrated device is brought into close contact with tissue, can greatly be strengthened the perception of the mankind, cognitive and activity ability, can be prolonged
Exhibition flexible inorganic integrated device is to solve health medical treatment and the effective way of human body dynamic monitoring.Technology of preparing is transferred by inorganic half
Conductor function film is peeled off from the inorganic semiconductor substrate that it grows, is impressed into again in flexible substrate, by integrated functionality unit
It is extended to closer in human body and the Flexible Environment such as wearable.Transfer technique tends to ripe and high accuracy；Prepare and be applied to transfer
Micro-nano functional unit be extending flexible inorganic integrated device premise and pith；The present invention proposes a kind of suitable for turning
The general semiconductor device cell preparation method of print；With thickness is small, structurally ordered controllable, reproducible, low manufacture cost, behaviour
The advantages of making simply and be easy to transfer.
The content of the invention
It is an object of the invention to propose a kind of preparation method for the ultra-thin inorganic semiconductor functional unit for being applied to transfer,
Have the advantages that small thickness, structurally ordered controllable, reproducible, low manufacture cost, it is simple to operate and be easy to transfer.
The present invention's proposes a kind of preparation method for the inorganic semiconductor film functional unit for being applied to transfer, including such as
Lower step：
Step 1：Using Material growth technology, growth is containing sacrificial between inorganic semiconductor substrate and functional unit epitaxial layer
The epitaxial wafer of domestic animal layer material；
Step 2：Using conventional semiconductor devices process technology, semiconductor functional unit array is manufactured, is formed by substrate, sacrificial
The substrate that domestic animal layer and inorganic semiconductor film functional unit array are constituted；
Step 3：Using photo etched mask technology, corrode the sacrifice layer of inorganic semiconductor functional unit periphery pre-position,
Hole is formed in the inorganic semiconductor film functional unit periphery pre-position；
Step 4：Spin coating flexible polymeric materials, and it is heat-treated, make it graphical by chemical wet etching technology,
The flexible polymeric materials are made to coat to be formed in the hole on the inorganic semiconductor film functional unit periphery；
Step 5：Using the corrosive liquid of sacrifice layer, remnants sacrifice layer is fallen in undercutting, is formed by the flexible polymeric materials
The inorganic semiconductor film functional unit array of support.
The preparation method for this ultra-thin inorganic semiconductor functional unit for being applied to transfer that the present invention is provided, with general
Property is strong, it is easy to transfer, the advantage such as simple to operate.
Brief description of the drawings
For the content and advantage that the present invention is furture elucidated, below in conjunction with accompanying drawing and example in detail as after, wherein：
Fig. 1 is to be proposed by the present invention suitable for the epitaxy junction composition of the inorganic semiconductor functional unit transferred；
Fig. 2 is the epitaxial substrate structure chart after step 2 processing in the embodiment of the present invention；
Fig. 3 is the epitaxial substrate structure chart after step 3 processing in the embodiment of the present invention；
Fig. 4 is the epitaxial substrate structure chart after step 4 processing in the embodiment of the present invention；
Fig. 5 is the epitaxial substrate structure chart after step 5 processing in the embodiment of the present invention；
Fig. 6 is the side view of the epitaxial substrate structure chart after step 5 processing in the embodiment of the present invention.
Embodiment
For the object, technical solutions and advantages of the present invention are more clearly understood, below in conjunction with specific embodiment, and reference
Accompanying drawing, the present invention is described in further detail.
The present invention proposes a kind of preparation method for the inorganic semiconductor film functional unit for being applied to transfer, including as follows
Step：
Step 1：Using Material growth technology, growth is containing sacrificial between inorganic semiconductor substrate and functional unit epitaxial layer
The epitaxial wafer of domestic animal layer material；
Step 2：Using conventional semiconductor devices process technology, semiconductor functional unit array is manufactured, is formed by substrate, sacrificial
The substrate that domestic animal layer and inorganic semiconductor film functional unit array are constituted；
Step 3：Using photo etched mask technology, corrode the sacrifice layer of inorganic semiconductor functional unit periphery pre-position,
Hole is formed in the inorganic semiconductor film functional unit periphery pre-position；
Step 4：Spin coating flexible polymeric materials, and it is heat-treated, make it graphical by chemical wet etching technology,
The flexible polymeric materials are made to coat to be formed in the hole on the inorganic semiconductor film functional unit periphery；
Step 5：Using the corrosive liquid of sacrifice layer, remnants sacrifice layer is fallen in undercutting, is formed by the flexible polymeric materials
The inorganic semiconductor film functional unit array of support.
Wherein, described Material growth technology can be vapor phase epitaxy technique, molecular beam epitaxy technique, metallo-organic compound
Chemical gaseous phase deposition technology；
Wherein, described inorganic semiconductor functional unit can be detector cells, light emitting diode, solar cell
Unit, Metal-Oxide Semiconductor field-effect transistor, laser element；
Wherein, the thickness of described inorganic semiconductor functional unit functional unit epitaxial layer in semiconductor epitaxial layers
Thickness is determined；
Wherein, described inorganic semiconductor backing material includes one kind or several in Si, GaAs, InP, GaSb, sapphire
The combination planted.
Wherein, met between described sacrificial layer material is in contact with it semiconductor functional unit epitaxial layer, backing material
Epitaxial growth conditions；
Wherein, described sacrifice layer, is present outside the semiconductor functional unit that corrosive liquid is in contact with it for sacrificial layer material
Prolonging layer, backing material has very high corrosion selection ratio；
Wherein, the sacrificial layer material is SiO2、AlAs、In0.53Ga0.47One kind in As.
Described sacrificial layer material it is graphical, refer to form 2,3,4 or more than 4 around functional unit
Undercutting hole；
Described flexible polymeric materials are one kind or several in positive photo glue, negative photoresist, polyimides, PMMA
The combination planted.
The flexible polymeric materials for can developed liquid or specific solvent dissolving material.
The thickness of the flexible polymeric materials is 1 micron to 4 microns.
The flexible polymeric materials thickness, it is characterised in that its thickness optimum value by polymer thin-film material toughness and
Its adhesiveness with epitaxial wafer is determined.
Wherein, cladding forms the flexible polymer in the hole on the inorganic semiconductor film functional unit periphery
Material forms two jiaos of support columns on the inorganic semiconductor film functional unit periphery, gusseted post, corner support column, big
In 4 jiaos of polygonal stable support column.
Described corrosion sacrifice layer is to control undercutting depth by selective etching liquid proportioning, corrosion temperature and time.
Refer to shown in Fig. 1, one embodiment of the invention provides a kind of ultra-thin inorganic semiconductor function of being applied to transfer
The preparation method of unit, comprises the following steps：
Step 1：Using metal organic chemical vapor deposition MOCVD, in inorganic semiconductor substrate and functional unit epitaxial layer
Between growth have the epitaxial wafer of sacrificial layer material；The In of PIN structural is grown with InP substrate0.53Ga0.47As exemplified by InP detectors,
1 micron of thick In is grown successively in InP substrate 10.53Ga0.47As sacrifice layers 2,1.5 microns of Si heavily doped layer of InP 3,2 microns of Si are light
Adulterate In0.53Ga0.47As absorbed layers 4 and the InP cap layers 5 of 1 micron of thickness Be heavy doping, Fig. 1 have shown the structure chart of this epitaxial wafer.
Step 2：Using conventional semiconductor devices process technology, after prepared epitaxial wafer is cleaned through organic solvent, use
Photo etched mask, the method for wet etching make upper following table, form mesa structure, and p-electrode uses Ti/Pt/Au metals 6, n-electrode
Using Cr/Au metals 7；In the In of above-mentioned PIN structural0.53Ga0.47As in InP detector examples, it is heavily doped that upper table surface is etched to Si
Layer of InP 3, following table is etched to In0.53Ga0.47As sacrifice layers 2, p-electrode formation is on upper table surface, and n-electrode formation is in following table
On, the upper following table of formation and n thereon, p-electrode are a detector cells；Served as a contrast by the step to lower and upper formation by InP
Bottom 1, In0.53Ga0.47As sacrifice layers 2 and In0.53Ga0.47The substrate of As InP detector cells composition, as shown in Fig. 2 preparing
InGaAs detector unit arrays, are regularly arranged in In0.53Ga0.47On As sacrifice layers.
Step 3：Using photo etched mask technology, detector cells corner and four side center sacrifice layers, remaining position are only exposed
It is photo-etched glue to cover, a layer corrosive liquid destruction will not be sacrificed；Configure In0.53Ga0.47As corrosive liquids H3PO4∶H2O2∶H2O=5: 3
: 8, this corrosive liquid does not corrode InP materials, corrodes the substrate after photo etched mask with it, to what is be not covered by photoresist
In0.53Ga0.47As sacrificial layer materials 2 are corroded completely, 1 minute reference time, in sacrifice layer 2 in detector cells corner and four sides
Corrode on center and hole 8, as shown in Figure 3；Formed by the sacrifice layer 2 and In after substrate 1, corrosion0.53Ga0.47As InP detection
The substrate of device unit composition.
Step 4：Spin coating AZ5214 polymer 9, AZ5214 is a kind of conventional flexible polymeric materials, is also a kind of conventional
Photoresist, can be patterned by photoetching technique, 3000 revs/min of rotating speed, rotational time 30s, on hot plate carry out
95 DEG C of heating, heat time 90s；By photolithographic exposure, after dry, development it is graphical, AZ5214 is in the sacrifice layer eroded
Position, i.e. detector cells corner and four side central films are coated between the upper surface of detector cells and substrate.In corrosion
After sacrifice layer, it is centrally formed AZ5214 flexible polymers 9 in corner and four sides and supports, as shown in figure 4, making the unit of detector has
Sequence is stably fixed on substrate.
Step 5：Utilize H3PO4∶H2O2∶H2O=5: 3: 8 corrosion corrosion In0.53Ga0.47As sacrifices 2, until
In0.53Ga0.47As sacrifice layers 2 corrode completely, reference time 30min；AZ5214 polymer 9 is prepared in detector cells corner
The ultra-thin In supported with four side centers0.53Ga0.47As InP detectors, the detector cells of this micro- support, Fig. 5 shows
The structure chart of the detector cells of the micro- support of this AZ5214 polymer 9, Fig. 6 shows the micro- support of this AZ5214 polymer 9
Detector cells side view；In transfer process, the micro- supporting constructions 9 of AZ5214 depart from substrate, transfer detector cells
Onto seal.
Particular embodiments described above, has been carried out further in detail to the purpose of the present invention, technical scheme and beneficial effect
Describe in detail bright, it should be understood that the foregoing is only the present invention specific embodiment, be not intended to limit the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution and improvements done etc. should be included in the protection of the present invention
Within the scope of.
Claims (10)
1. the preparation method of the inorganic semiconductor film functional unit suitable for transfer, comprises the following steps：
Step 1：Using Material growth technology, growth contains sacrifice layer between inorganic semiconductor substrate and functional unit epitaxial layer
The epitaxial wafer of material；
Step 2：Using conventional semiconductor devices process technology, semiconductor functional unit array is manufactured, is formed by substrate, sacrifice layer
The substrate constituted with inorganic semiconductor film functional unit array；
Step 3：Using photo etched mask technology, corrode the sacrifice layer of inorganic semiconductor functional unit periphery pre-position, in institute
State inorganic semiconductor film functional unit periphery pre-position and form hole；Described hole is to be formed in the inorganic semiconductor
2,3,4 or the undercutting hole more than 4 on film functional unit periphery；
Step 4：Spin coating flexible polymeric materials, and it is heat-treated, make it graphical by chemical wet etching technology, make institute
Flexible polymeric materials are stated to coat to be formed in the hole on the inorganic semiconductor film functional unit periphery；
Step 5：Using the corrosive liquid of sacrifice layer, remnants sacrifice layer is fallen in undercutting, and formation is supported by the flexible polymeric materials
Inorganic semiconductor film functional unit array.
2. preparation method as claimed in claim 1, wherein described Material growth technology can be vapor phase epitaxy technique, molecule
Beam epitaxy technology, metallo-organic compound chemical gaseous phase deposition technology.
3. preparation method as claimed in claim 1, wherein described inorganic semiconductor functional unit can be detector cells, hair
Optical diode unit, solar battery cell, Metal-Oxide Semiconductor field-effect transistor, laser element.
4. preparation method as claimed in claim 1, wherein described inorganic semiconductor backing material include Si, GaAs, InP,
One or more of combinations in GaSb, sapphire.
5. preparation method as claimed in claim 1, wherein, the sacrificial layer material is SiO2、AlAs、In0.53Ga0.47In As
One kind.
6. preparation method as claimed in claim 1, wherein described flexible polymeric materials are positive photo glue, negative photo
One or more of combinations in glue, polyimides, PMMA.
7. preparation method as claimed in claim 1, wherein, the flexible polymeric materials are being capable of developed liquid or specific
The material of solvent dissolving.
8. preparation method as claimed in claims 6 or 7, wherein, the thickness of the flexible polymeric materials is micro- to 4 for 1 micron
Rice.
9. preparation method as claimed in claim 1, wherein, cladding is formed on the inorganic semiconductor film functional unit periphery
Hole in flexible polymeric materials form two jiaos of support columns, triangles on the inorganic semiconductor film functional unit periphery
Support column, corner support column, the polygonal stable support column more than 4 jiaos.
10. preparation method as claimed in claim 1, wherein, described corrosion sacrifice layer is matched by selective etching liquid, corrosion
Temperature and time controls undercutting depth.
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| CN201610065321.9A CN105609589B (en) | 2016-01-29 | 2016-01-29 | Suitable for the preparation method of the inorganic semiconductor film functional unit of transfer |
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| CN201610065321.9A CN105609589B (en) | 2016-01-29 | 2016-01-29 | Suitable for the preparation method of the inorganic semiconductor film functional unit of transfer |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103572284A (en) * | 2012-08-06 | 2014-02-12 | 徐明生 | Method for transferring two-dimensional nano-film |
| CN105489716A (en) * | 2016-01-05 | 2016-04-13 | 中国科学院半导体研究所 | Preparation method for flexible LED array based on inorganic semiconductor material |
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| CN103572284A (en) * | 2012-08-06 | 2014-02-12 | 徐明生 | Method for transferring two-dimensional nano-film |
| CN105489716A (en) * | 2016-01-05 | 2016-04-13 | 中国科学院半导体研究所 | Preparation method for flexible LED array based on inorganic semiconductor material |
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