CN105590848B - Display device preparation method - Google Patents
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- CN105590848B CN105590848B CN201410653370.5A CN201410653370A CN105590848B CN 105590848 B CN105590848 B CN 105590848B CN 201410653370 A CN201410653370 A CN 201410653370A CN 105590848 B CN105590848 B CN 105590848B
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- device preparation
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Abstract
The present invention relates to a kind of display device preparation methods, comprising: coats an organic matter layer in the surface of semiconductor structure；After through exposure and development, in the planarization layer that organic matter layer formation is had to opening figure on the semiconductor structure；Curing process is carried out to the planarization layer, the surface of planarization layer described in curing process forms an organic polymer layers；After wet etching removes the organic polymer layers, one electrode layer of deposition covers the upper surface of the planarization layer, and the electrode layer also covers bottom and its side wall of the opening figure；One data line layer is set in the semiconductor structure, and the planarization layer is covered in the upper surface of the data line layer, and the electrode layer and the data line layer are electrically connected.The method of the present invention reduces process flow quantity compared with traditional technology in the methods of the invention, simplifies process flow, and the organizational system expense of process equipment is put into and is substantially reduced.
Description
Technical field
The present invention relates to a kind of semiconductor technology more particularly to a kind of display device preparation methods.
Background technique
Currently, in the manufacturing process of display device, it is desirable that display device has high aperture, and even superelevation is open
Rate.
The aperture opening ratio of device refers to the wiring part for removing each pixel, tTransistor portion (generalling use black matrix" to hide)
Light afterwards passes through the ratio between the area of part and the area of each pixel entirety.So the aperture opening ratio of device is higher,
The efficiency that light passes through is also higher.
In order to improve the aperture opening ratio of device, organic membrane process stream with high aperture (or superelevation aperture opening ratio) is generallyd use
Journey is realized, i.e., by the way that organic material layer is arranged between two layers of adjacent metal layer, with reduced using organic material this two
Coupling effect between layer metal layer, and then prepare the device with high aperture.
The technique that tradition prepares the above-mentioned device with high aperture mainly includes preamble technique and organic membrane process, tool
Steps are as follows for body technology:
It prepares polysilicon (Polysilicon) on the glass substrate first, then forms gate insulation layer (Gate
Insulator), grid line (Gate Line) is then prepared, and is continued to etch to form contact hole (Contact Hole), it
After form data line layer (Data Line)；After above-mentioned data line layer preparation is completed, continuously form with superelevation aperture opening ratio
Organic matter object planarization layer (Organic Material Planar Layer with Ultra High Aperture
ratio)。
Wherein, in the process flow of the superelevation aperture opening ratio organic matter planarization layer, generally all including the coating of photoresist
(coating), (exposure), development (develop), the baking (baking) of organic matter planarization layer and solidification are exposed
(curing) processing steps such as.It, generally all can shape after solidifying to organic matter planarization layer in these processing steps
It is covered in the surface of device at the polymer (organic polymer) of one layer of organic matter, if do not removed, will lead to device
Metal and metal layer between contact impedance it is excessively high or therefore other abnormal conditions in order to guarantee the yield of device, are needed at this
By-product (organic polymer) is formed by the step after step to be removed.
As it can be seen that due to can be along with organic polymer by-product in the solidification process for carrying out organic matter planarization layer
It generates, therefore, also needs at least to carry out the cleaning (organic polymer of two steps after solidifying the organic matter planarization layer
Dry etching removal and electrode process before prerinse), will lead to device in this way in actual production process, virtually increase
The quantity of processing step, and then the process cycle of product is increased, affect the production efficiency of product.
Chinese patent (CN 1641830A) discloses a kind of production method of display panel, comprising: on a display panel according to
Sequence forms protective layer and flatness layer, flatness layer are the photoresists being made of high-molecular organic material, and thickness is aboutIt is then that flatness layer is graphical for maintaining surface flat, to form opening, continues etching downwards and protect
Sheath forms contact hole, goes photoresist technique (descum) come enlarged openings by one, then deposits in flat layer surface
One conductive layer.
The patent does not provide the specific method for how carrying out organic polymer removal.
Chinese patent (CN 101017301A) discloses a kind of method for manufacturing display base plate, specifically includes: being formed with
Coating flat layer, forms guide hole in flatness layer on the substrate of active component and capacitance structure, in sequentially forming on flatness layer
The material of bright conductive layer and reflection electrode layer, transparency conducting layer can be indium tin oxide etc..
Method disclosed in the patent is directly to carry out the deposition of ITO layer, above-mentioned two steps work after the completion of flatness layer preparation
There is no the removals for carrying out organic polymer between skill.
It can be seen that there is no one kind both to have saved at present in the preparation process of the display device with superelevation aperture opening ratio
Saving processing step again can be to the effective ways that organic polymer is removed.
Summary of the invention
In view of the above problems, the present invention provides a kind of display device preparation method.
The technical proposal for solving the technical problem of the invention are as follows:
A kind of preparation method of display device, which is characterized in that
An organic matter layer is coated in the surface of semiconductor structure；
After through exposure and development, there is the flat of opening figure in forming the organic matter layer on the semiconductor structure
Change layer；
Curing process is carried out to the planarization layer, curing process makes the surface of the planarization layer form an organic polymer
Nitride layer；
After wet etching removes the organic polymer layers, depositing electrode layer covers the upper surface of the planarization layer, and
The electrode layer also covers bottom and its side wall of the opening figure；
One data line layer is set in the semiconductor structure, and the planarization layer is covered in the upper table of the data line layer
Face, and the electrode layer and the data line layer are electrically connected.
The display device preparation method, wherein the semiconductor structure further include polysilicon gate, gate insulation layer,
Grid line and contact hole.
The display device preparation method, wherein the wet process is carried out using the chemical cleaning solution for including ethanol amine
Etching.
The display device preparation method, wherein also include dimethyl sulfoxide in the chemical cleaning solution；
The display device preparation method, wherein also include butyl in the chemical cleaning solution.
The display device preparation method, wherein also include dimethyl acetamide in the chemical cleaning solution.
The display device preparation method, wherein the wet process is carried out using the chemical cleaning solution for including hydrofluoric acid
Etching.
The display device preparation method, wherein the material of the transparent electrode layer is tin indium oxide.
The display device preparation method, wherein when the progress wet etching to the organic polymer layers,
It is also accompanied by atmospheric plasma etching technics.
The display device preparation method, wherein the organic polymer layers are covered in the upper table of the planarization layer
Face and the bottom and side wall surface of each opening figure.
Above-mentioned technical proposal have the following advantages that or the utility model has the advantages that
The method of the present invention is removed by the method for wet etching to be generated in superelevation aperture opening ratio display device preparation process
Redeposited organic polymer layers, do not need compared with traditional technology, in the method for the present invention using dry etching board, thus
So that the organizational system expense investment of process equipment substantially reduces.In addition, removed organic polymer layers using method of the invention
Also the surface of device architecture is cleaned simultaneously, so not needed before the deposition preparation process for carrying out subsequent clear electrode
Prerinse is carried out again, to reduce process flow quantity, and then simplifies process flow.
Detailed description of the invention
With reference to appended attached drawing, more fully to describe the embodiment of the present invention.However, appended attached drawing be merely to illustrate and
It illustrates, and is not meant to limit the scope of the invention.
Fig. 1 is in embodiment of the present invention method from planarization layer technique to the flow diagram between electrode deposition technique；
Fig. 2~Fig. 7 is to be formed by device architecture schematic diagram in embodiment of the present invention method after different process step；
Fig. 8 is in another embodiment of the method for the present invention from planarization layer technique to the process signal between electrode deposition technique
Figure.
Specific embodiment
The present invention provides a kind of minimizing technology of organic polymer in high aperture display device preparation process, and the present invention can
It is such as low applied in the preparation process of any high aperture that will form organic polymer or the display device of superelevation aperture opening ratio
Warm polycrystalline silicon device (LTPS), film transistor device (TFT), liquid crystal display device (LCD) or active organic electroluminescent
The preparation process etc. of display (AMOLED).
Central idea of the invention is when removing organic polymer, by using chemical cleaning solution (chemical base
Treatment) treatment process replaces following two processing step completely or partially:
(1) dry etching removes organic polymer；
(2) prerinse before electrode deposition.
With reference to the accompanying drawing and specific embodiment come the present invention is described in detail.
Before carrying out conventional flow operation to planarization layer preparation on a glass substrate, with successively shape on the substrate
At polysilicon gate, gate insulation layer, grid line, contact hole, data line.Wherein, polysilicon gate, gate insulation layer, grid are formed
Existing any known or common method can be used in the method for line, contact hole and data line, does not carry out in the present invention to it
Limitation.
As shown in Figure 1, then, to above-mentioned polysilicon gate, gate insulation layer, grid line, contact hole and data knot
The glass substrate of structure carries out planarization layer technique, the planarization layer technique specifically includes the following steps:
Firstly, one layer of organic thin film is coated in the glass baseplate surface for being formed with above-mentioned semiconductor structure, with planarization
The surface of device forms planarization layer 2, (part of 1 or more data Layer is illustrated only in figure) as shown in Figure 2, the planarization layer 2
Thickness can be 2um~4um, such as 2um, 3um or 4um, the material of the organic thin film can be macromolecule organic material.
Then, which is exposed, developing process, to carry out patterned process to the planarization layer, is formed
As shown in Figure 3, the planarization layer 2 ' with multiple opening figures.
Then, the planarization layer 2 ' formed after being open is toasted, curing process, organic thin film is become into high score
Sub- form, the organic thin film has partial organic substances film that can generate volatilization after curing process at this time, the substance volatilized
Again can on redeposited time glass substrate exposure surface, form redeposited organic polymer layers 3, as shown in figure 4, due to
The Cheng Qian's planarization layer of crossing for forming the organic polymer layers 3 has just formed patterned opening by exposure, developing process, and
And opening can expose the data line metal 1 of lower layer, so redeposited organic polymer layers are not only covered in planarization
The surface of layer 2, but also the surface for the opening figure being covered in planarization layer, that is, the side wall being open and bottom be (exposure
The surface of data line metal).Above by volatilization, the redeposited organic polymer formed will lead to made such as without removal
The metal layer of standby device and the contact impedance of metal layer are excessively high, so must be removed.
Removal for redeposited organic polymer layers is gone using chemical cleaning solution in an embodiment of the present invention
It removes, as shown in figure 5, the chemical cleaning solution 4 is acted in organic polymer layers 3, so that the chemical cleaning solution 4 and organic polymer
Nitride layer 3 is reacted, and then completely removes 3 layers of the organic polymer, when the chemical cleaning solution is removing the organic of the redeposition
Electrode layer presedimentary prerinse effect is also acted as while polymeric layer.The chemical cleaning solution may include in following solution
Any one: (1) mixed solution of ethanol amine (MEA) and dimethyl sulfoxide (DMSO)；(2) ethanol amine (MEA) and dimethyl second
The mixed solution of amide (DMAC)；(3) mixed solution of ethanol amine (MEA) and butyl (BDG)；(4) hydrofluoric acid is molten
Liquid (HF).For above-mentioned solution, the selection of concentration can be determined according to actual process requirement.
Glass substrate after above-mentioned chemical cleaning solution cleaning does not remove only due to causing after flatness layer solidification
Redeposited organic polymer layers, as shown in fig. 6, and also the surface of semiconductor structure is cleaned simultaneously, thus
The preparation of subsequent electrode layer can be directly carried out, forms structure as shown in Figure 7 after depositing electrode layer 5, wherein electrode layer
Material can be tin indium oxide, and electrode layer can be transparent electrode layer.Without carrying out prewashed processing step again, so, with
The prior art is compared, and processing step is saved.
In another embodiment of the present invention, it is total to as shown in figure 8, above-mentioned chemical cleaning solution and atmospheric plasma can be used
Same-action removes organic polymer layers, while also playing the prerinse effect before preparation transparent electrode.In this embodiment
Due to atmospheric plasma equipment can simple articulator be set to wet-cleaning board on, so not increasing additional cost input.
And in method of the invention, it is needed in the process of processing using chemical cleaning solution through wet etching machine bench,
The organizational system expense that dry etching board is used in traditional handicraft is eliminated, even if handled simultaneously using atmospheric plasma,
It only needs for atmospheric plasma equipment frame to be set on wet etching machine bench, does not need additionally to increase dry etching board.To save
The organizational system expense of process equipment is saved.
In conclusion the present invention removes display device by wet-cleaning or wet-cleaning and atmospheric plasma collective effect
Organic polymer produced during the preparation process, so that also acting while removing organic polymer to device architecture surface
Cleaning saves technique to not need to carry out presedimentary prerinse again during subsequent deposition forms transparent electrode
Step.In addition, using wet etching machine bench in the method for the invention, and do not need using dry etching board, to make
The equipment organizational system expense obtained in technical process reduces, and thereby reduces production cost.
For a person skilled in the art, after reading above description, various changes and modifications undoubtedly be will be evident.
Therefore, appended claims should regard the whole variations and modifications for covering true intention and range of the invention as.It is weighing
The range and content of any and all equivalences, are all considered as still belonging to the intent and scope of the invention within the scope of sharp claim.
Claims (10)
1. a kind of preparation method of display device, which is characterized in that
An organic matter layer is coated in the surface of semiconductor structure；
After through exposure and development, in the planarization layer that organic matter layer formation is had to opening figure on the semiconductor structure；
Curing process is carried out to the planarization layer, curing process makes the surface of the planarization layer form an organic polymer
Layer；
After wet etching removes the organic polymer layers, one electrode layer of deposition covers the upper surface of the planarization layer, and should
Electrode layer also covers bottom and its side wall of the opening figure；
One data line layer is set in the semiconductor structure, the planarization layer is covered in the upper surface of the data line layer, and
The electrode layer and the data line layer are electrically connected.
2. display device preparation method as described in claim 1, which is characterized in that the semiconductor structure further includes polysilicon
Grid, gate insulation layer, grid line and contact hole.
3. display device preparation method as described in claim 1, which is characterized in that using the chemical cleaning for including ethanol amine
Liquid carries out the wet etching.
4. display device preparation method as claimed in claim 3, which is characterized in that also include two in the chemical cleaning solution
Methyl sulfoxide.
5. display device preparation method as claimed in claim 3, which is characterized in that also include two in the chemical cleaning solution
Butyl glycol ether.
6. display device preparation method as claimed in claim 3, which is characterized in that also include two in the chemical cleaning solution
Methylacetamide.
7. display device preparation method as described in claim 1, which is characterized in that using the chemical cleaning for including hydrofluoric acid
Liquid carries out the wet etching.
8. display device preparation method as described in claim 1, which is characterized in that the material of the electrode layer is indium oxide
Tin.
9. display device preparation method as described in claim 1, which is characterized in that described to be carried out to the organic polymer layers
When the wet etching, it is also accompanied by atmospheric plasma etching technics.
10. display device preparation method as described in claim 1, which is characterized in that the organic polymer layers are covered in institute
State the upper surface of planarization layer and the bottom and side wall of each opening figure.
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| CN201410653370.5A CN105590848B (en) | 2014-11-17 | 2014-11-17 | Display device preparation method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410653370.5A CN105590848B (en) | 2014-11-17 | 2014-11-17 | Display device preparation method |
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| CN105590848A CN105590848A (en) | 2016-05-18 |
| CN105590848B true CN105590848B (en) | 2019-02-15 |
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| CN111799316A (en) * | 2017-06-27 | 2020-10-20 | 堺显示器制品株式会社 | Method for manufacturing organic EL device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6284558B1 (en) * | 1997-11-25 | 2001-09-04 | Nec Corporation | Active matrix liquid-crystal display device and method for making the same |
| CN1438529A (en) * | 2001-10-22 | 2003-08-27 | 三星电子株式会社 | Liquid-crystal display device of reinforcing reflection and making method thereof |
| CN101017301A (en) * | 2007-03-09 | 2007-08-15 | 友达光电股份有限公司 | Method for producing display base plate |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI330276B (en) * | 2006-04-25 | 2010-09-11 | Au Optronics Corp | Active device array substrate and fabricating method thereof |
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2014
- 2014-11-17 CN CN201410653370.5A patent/CN105590848B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6284558B1 (en) * | 1997-11-25 | 2001-09-04 | Nec Corporation | Active matrix liquid-crystal display device and method for making the same |
| CN1438529A (en) * | 2001-10-22 | 2003-08-27 | 三星电子株式会社 | Liquid-crystal display device of reinforcing reflection and making method thereof |
| CN101017301A (en) * | 2007-03-09 | 2007-08-15 | 友达光电股份有限公司 | Method for producing display base plate |
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Address after: 201506, building two, building 100, 1, Jinshan Industrial Road, 208, Shanghai, Jinshan District Patentee after: Shanghai Hehui optoelectronic Co., Ltd Address before: 201506, building two, building 100, 1, Jinshan Industrial Road, 208, Shanghai, Jinshan District Patentee before: EverDisplay Optronics (Shanghai) Ltd. |