CN105578854B - A kind of high isolation switch module - Google Patents
A kind of high isolation switch module Download PDFInfo
- Publication number
- CN105578854B CN105578854B CN201510939811.2A CN201510939811A CN105578854B CN 105578854 B CN105578854 B CN 105578854B CN 201510939811 A CN201510939811 A CN 201510939811A CN 105578854 B CN105578854 B CN 105578854B
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- Prior art keywords
- switch
- isolated location
- shield
- switching circuit
- isolation
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Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K9/00—Screening of apparatus or components against electric or magnetic fields
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
- Waveguides (AREA)
Abstract
The invention discloses a kind of high isolation switch modules, and in particular to RF switch technical field.It solves the deficiency of the performance of existing multi-level radio-frequency switch tandem effects switch isolation degree.The high isolation switch module, including main isolated location, one end of main isolated location is equipped with signal input port, the other end is connected with a plurality of switching circuit, every switching circuit includes multiple cascade isolated locations, it is connected with signal output port on the last one isolated location in every switching circuit, is connected by strip line between adjacent isolated location；Each isolated location includes RF switch and barrier shield, and RF switch is single-pole double-throw switch (SPDT), and barrier shield uses microwave multi-layer boards, and shield opening is evenly distributed on barrier shield, and shield opening is " M shape " shield opening.Barrier shield is equipped with Metal shielding shell, and the isolation of every switching circuit is 130dB in 100kHz 8.5GHz band limits.
Description
Technical field
The invention belongs to RF switch technical fields, and in particular to a kind of high isolation switch module.
Background technology
RF switch is that the electronic systems such as microwave communication realize high performance critical component, many electronic products it is key
The performance of switch can be all relied on, quality directly affects the stability and reliability of system.RF switch, which has, is inserted into damage
The features such as consumption, high-isolation, high reliability.Isolation is the most important index of RF switch, this index directly determines out
Close and switch the performance of institute's control circuit.The isolation of integrated switch is general in 100kHz-8.5GHz band limits at present
For 40dB or so, there are space radiations for multi-level radio-frequency switch series joint conference, can influence the performance of switch isolation degree.
Invention content
The purpose of the present invention is switching the deficiency of the performance of tandem effects switch isolation degree for existing multi-level radio-frequency, carry
The cascade by the way that switches at different levels are carried out with grading shield is gone out, solving space radiation influences a kind of high-isolation of isolation performance
Switch module.
The present invention specifically adopts the following technical scheme that：
One end of a kind of high isolation switch module, including main isolated location, the main isolated location is inputted equipped with signal
Port, the other end are connected with a plurality of switching circuit, and every switching circuit includes multiple cascade isolated locations, every switching line
It is connected with signal output port on the last one isolated location in road, is connected by strip line between the adjacent isolated location,
Each isolated location includes RF switch and barrier shield, and shield opening is evenly distributed on the barrier shield.
Preferably, the RF switch is single-pole double-throw switch (SPDT).
Preferably, the barrier shield uses microwave multi-layer boards.
Preferably, the shield opening is " M shape " shield opening.
Preferably, the barrier shield is equipped with Metal shielding shell.
Preferably, the isolation of every switching circuit is 130dB in 100kHz-8.5GHz band limits.
The invention has the advantages that：The high isolation switch module is realized by the cascade of multiple isolated locations
The high-isolation of switch module；It is equipped with barrier shield in each isolated location, each isolated location is realized and is shielded, is avoided each
Coupled interference in plate between a isolated location；Barrier shield uses microwave multi-layer boards, passes through strip line between each isolated location
It is attached, avoids the direct radiation interference of isolated location, while ensure that the straight-through frequency response of switch module；Add on barrier shield
Upper metal shielding can prevent signal space crosstalk.
Description of the drawings
Fig. 1 is that a kind of high isolation switch module is connected schematic diagram；
Fig. 2 is barrier shield structural schematic diagram；
Fig. 3 is that strip line connects isolated location schematic diagram.
Specific implementation mode
The specific implementation mode of the present invention is described further in the following with reference to the drawings and specific embodiments：
As shown in Figs. 1-3, a kind of high isolation switch module, including main isolated location, one end of main isolated location are equipped with
Signal input port, the other end are connected with 2 switching circuits, and every switching circuit includes 3 cascade isolated locations, (if it is main every
Isolation from unit and each isolated location is I, then total isolation is 4I.), the cascade at this refers to connecting.
It is connected with signal output port on the last one isolated location in every switching circuit, leads between adjacent isolated location
Cross strip line connection.Each isolated location includes RF switch and barrier shield, and RF switch is single-pole double-throw switch (SPDT), barrier shield
Using microwave multi-layer boards, shield opening is evenly distributed on barrier shield, shield opening is " rice font " shield opening.Barrier shield is equipped with gold
Belong to shielding shell, the isolation of every switching circuit is 130dB in 100kHz-8.5GHz band limits.
Be equipped with barrier shield in each isolated location, each isolated location realized and is shielded, avoid each isolated location it
Between plate in coupled interference；Barrier shield uses microwave multi-layer boards, is attached, is avoided by strip line between each isolated location
The direct radiation interference of isolated location, while ensure that the straight-through frequency response of switch module；Metal shielding is added on barrier shield,
It can prevent signal space crosstalk.
Certainly, above description is not limitation of the present invention, and the present invention is also not limited to the example above, this technology neck
The variations, modifications, additions or substitutions that the technical staff in domain is made in the essential scope of the present invention should also belong to the present invention's
Protection domain.
Claims (2)
1. a kind of high isolation switch module, which is characterized in that including main isolated location, one end of the main isolated location is equipped with
Signal input port, the other end are connected with a plurality of switching circuit, and every switching circuit includes multiple cascade isolated locations, often
Signal output port is connected on the last one isolated location in switching circuit, by band-like between the adjacent isolated location
Line connects, and each isolated location includes RF switch and barrier shield, and shield opening is evenly distributed on the barrier shield, described to penetrate
Frequency switch is single-pole double-throw switch (SPDT), and it is " M shape " shield opening, the shielding that the barrier shield, which uses microwave multi-layer boards, shield opening,
Wall is equipped with Metal shielding shell.
2. a kind of high isolation switch module as described in claim 1, which is characterized in that the isolation of every switching circuit
Degree is 130dB in 100kHz-8.5GHz band limits.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510939811.2A CN105578854B (en) | 2015-12-16 | 2015-12-16 | A kind of high isolation switch module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510939811.2A CN105578854B (en) | 2015-12-16 | 2015-12-16 | A kind of high isolation switch module |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105578854A CN105578854A (en) | 2016-05-11 |
| CN105578854B true CN105578854B (en) | 2018-10-09 |
Family
ID=55888341
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510939811.2A Active CN105578854B (en) | 2015-12-16 | 2015-12-16 | A kind of high isolation switch module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105578854B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101662885A (en) * | 2008-08-28 | 2010-03-03 | 中国科学院微电子研究所 | Method for performing gold backing on printed circuit board of Ku waveband microstrip type switch circuit |
| CN102340048A (en) * | 2011-07-27 | 2012-02-01 | 中国电子科技集团公司第三十八研究所 | Method for miniaturizing delay line design based on low-temperature co-firing ceramic process |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101174847B (en) * | 2006-10-31 | 2011-06-08 | 鸿富锦精密工业（深圳）有限公司 | Housing of transceiver module |
| CN201352781Y (en) * | 2008-11-13 | 2009-11-25 | 武汉凡谷电子技术股份有限公司 | Programmable step attenuator |
| CN201600448U (en) * | 2010-01-22 | 2010-10-06 | 南京誉葆科技有限公司 | MWW (millimeter wave) coherent seeker front end device |
| CN203101876U (en) * | 2013-01-31 | 2013-07-31 | 成都亚光电子股份有限公司 | Matrix switch |
| CN103580658B (en) * | 2013-11-07 | 2016-06-29 | 中国电子科技集团公司第四十一研究所 | A kind of radio-frequency switch circuit |
| CN204206114U (en) * | 2014-07-25 | 2015-03-11 | 深圳国人通信股份有限公司 | A kind of multimode amplifying device and radio frequency thereof amplify link |
| CN104135300B (en) * | 2014-08-07 | 2017-04-12 | 上海无线电设备研究所 | Ku-waveband multi-channel switching receiving device and switching receiving method |
| CN204349956U (en) * | 2015-02-06 | 2015-05-20 | 深圳市极致汇仪科技有限公司 | A kind of radio-frequency (RF) switch of high-isolation |
-
2015
- 2015-12-16 CN CN201510939811.2A patent/CN105578854B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101662885A (en) * | 2008-08-28 | 2010-03-03 | 中国科学院微电子研究所 | Method for performing gold backing on printed circuit board of Ku waveband microstrip type switch circuit |
| CN102340048A (en) * | 2011-07-27 | 2012-02-01 | 中国电子科技集团公司第三十八研究所 | Method for miniaturizing delay line design based on low-temperature co-firing ceramic process |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105578854A (en) | 2016-05-11 |
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