CN105575921A - IC component for vertical heat conduction package structure - Google Patents
IC component for vertical heat conduction package structure Download PDFInfo
- Publication number
- CN105575921A CN105575921A CN201610111211.1A CN201610111211A CN105575921A CN 105575921 A CN105575921 A CN 105575921A CN 201610111211 A CN201610111211 A CN 201610111211A CN 105575921 A CN105575921 A CN 105575921A
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- CN
- China
- Prior art keywords
- chip
- encapsulating structure
- groove
- heat transfer
- vertical heat
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
Abstract
The invention provides an IC component for a vertical heat conduction package structure, which comprises a plastic frame with a groove, a heat conduction substrate, at least one IC chip, at least one connection part, and a glue part, wherein the heat conduction substrate is fixed on the bottom surface of the groove; the at least one IC chip is arranged on the heat conduction substrate; the at least one connection part is arranged in the groove for electrically connecting the IC chips and electrode contacts located outside the groove of the plastic frame; and the glue part fills the groove of the plastic frame. The heat resistance of the IC component can be reduced, the IC component can be applied to an application scene with a smaller size and a higher power, the reliability of the IC chip is enhanced, the service life is prolonged, and the manufacturing process is simple.
Description
Technical field
The present invention relates to IC (integrated circuit) member arts, what be specifically related to is a kind of IC element of vertical heat transfer encapsulating structure.
Background technology
IC chip, through encapsulation, just becomes element, can be welded on the upper use of PCB (Printedcircuitboard, printed circuit board).The general encapsulating structure adopted is SOP (smallOut-LinePackage, little outline packages) now.First make electrode pin by metal material processing; Then IC chip is bundled on electrode pin by elargol, and welds electric connection line; Then carry out mould pressing process, by thermoplastic epoxy by shaping for the portion envelops comprising IC chip in electrode pin, then electrode pin is cut separation, forming element; Whole process is encapsulation.
The IC element of SOP encapsulating structure is at use power and environmentally have comparatively serious defect, as in smaller in space and that radiating condition is not enough lighting source, it is such as A60 bulb lamp, whole lamp power is generally less than 5W, and very high to the cooling requirements of shell, the temperature of the external environment condition of General Requirements IC element can not more than 50 DEG C.In fact, present bulb lamp casing is not considered to adopt the good metal structure of heat radiation as far as possible, but employing is framework and the composite construction of outer wrap plastic cement with metal, make the fail safe of protection against electric shock secure, and cost reduces greatly, but radiating condition has been deteriorated, therefore, the IC element of SOP encapsulating structure cannot be adapted in this type of lighting source.
In addition, present IC element adopts SOP mode to encapsulate mostly, and the element (thermal resistance * area) of this encapsulating structure, up to more than 20K*mm2/W, limits the application of IC element, and one is that the lamp of small size can not be used, because radiating condition is inadequate; Two lamps being above 5W can not be used, because the caloric value of IC element is too large; Three is because the dissipation power of IC element is relevant with input voltage, and the line voltage excursion of many countries and regions is very large, makes the dissipation power of IC element too large, cannot normally work.Existing SOP encapsulation technology is not suitable for Linear Driving IC element, because this encapsulating structure make IC element thermal resistance high (50-100K/W0.5mm2 naked core) and also volume large, and the feature of this IC naked core to be exactly volume little and dissipation power is large, general area only has 0.5-1.0mm2, thickness is no more than 0.5mm, and dissipation power can be up to 2-4W.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of IC element of vertical heat transfer encapsulating structure, can reduce the thermal resistance of IC element, is applicable to the more high-power application scenario of more small size, and increase IC chip reliability, increase the service life, manufacture craft is simple.
In addition, the IC element of vertical heat transfer encapsulating structure provided by the invention may be used for linear constant current driving IC chip encapsulation forming element, linear constant current drive IC element is applicable to the more high-power lamp of more small size, and in the larger situation of IC element dissipation power, lamp still can normally work.
For solving the problem, the present invention proposes a kind of IC element of vertical heat transfer encapsulating structure, comprising: one there is a groove mould frame; One heat-conducting substrate being fixed to the bottom surface of described groove; At least one IC chip be installed on described heat-conducting substrate; At least onely to be arranged in described groove and by described IC chip and the described connecting portion being positioned at the electrode contacts electrical connection outside groove moulding frame; And the glue portion of moulding described in being filled in the groove of frame.
According to one embodiment of present invention, described connecting portion comprises: the conducting strip being fixed to the bottom surface of described groove; Connect the connection wire of the electrode contacts of described IC chip and the electrode contacts of described conducting strip; And to draw from described conducting strip and to mould the extraction wire of the electrode contacts of frame described in being connected to.
According to one embodiment of present invention, described conducting strip is copper sheet.
According to one embodiment of present invention, the described heat-conducting substrate copper sheet that comprises the bottom surface being fixed to described groove and the silverskin that is covered on described copper sheet; Described IC chip is installed on described heat-conducting substrate by elargol.
According to one embodiment of present invention, described copper sheet is the alloy of fine copper or copper, and the thickness range of copper sheet is 0.1-0.3mm.
According to one embodiment of present invention, described elargol is the elargol of alloying.
According to one embodiment of present invention, the base material in described glue portion is thermosetting resin.
According to one embodiment of present invention, the base material in described glue portion is the fire resistant resin of epoxy resin or silicones or silicones hydridization.
According to one embodiment of present invention, described IC chip is linear constant current driving IC chip.
According to one embodiment of present invention, the thermal resistance scope of described IC element is 2-10K*mm
2/ W.
After adopting technique scheme, the present invention has following beneficial effect compared to existing technology: IC chip is installed to one of heat-conducting substrate on the surface, be different from existing SOP and encapsulate lateral transport heat, heat-conducting substrate can carry out the heat conduction of vertical direction, more be conducive to heat radiation, reduce the thermal resistance of encapsulating structure, and the reeded frame of moulding of apparatus is as support, by in a groove built-in to heat-conducting substrate, chip and corresponding connecting portion, groove can accept the glue of mobility, and after some glue is fixing, IC element completes encapsulation; (the thermal resistance * area) of IC element is made to be down to 2-10K*mm
2/ W, thus the dissipation power of this IC element is made to be increased to 2-4W, the power of whole circuit loop (if in lamp, being whole lamp) can rise to more than 20W, and can also keep the stability of output current when voltage fluctuation is very large; Again because thermal resistance reduces, descend the temperature of IC chip to reduce in working order, so the reliability of this chip too increases, the life-span can grow to 100,000 hours.
In addition, existing constant current drive IC element is adopted encapsulating structure of the present invention, component size can be made less, can fill in very little lamp, as candle lamp; Radiating effect is excellent, can use in the lamp of relatively high power, and caloric value does not affect whole lamp function; Can ensure still can normally work in the larger situation of IC element dissipation power, meet the need of market.
Accompanying drawing explanation
Fig. 1 is the structural representation that glue portion do not established by the IC element of the vertical heat transfer encapsulating structure of one embodiment of the invention;
Fig. 2 is the some glue schematic diagram of the IC element of the vertical heat transfer encapsulating structure of one embodiment of the invention;
Fig. 3 is the thermal resistance calculation structural representation of the IC component encapsulation of one embodiment of the invention.
Embodiment
For enabling above-mentioned purpose of the present invention, feature and advantage become apparent more, are described in detail the specific embodiment of the present invention below in conjunction with accompanying drawing.
Set forth a lot of detail in the following description so that fully understand the present invention.But the present invention can be much different from alternate manner described here to implement, those skilled in the art can when without prejudice to doing similar popularization when intension of the present invention, therefore the present invention is by the restriction of following public concrete enforcement.
Referring to Fig. 1 and Fig. 2, the IC element of the vertical heat transfer encapsulating structure of the present embodiment, comprises and moulds frame 1, heat-conducting substrate 2, IC chip 3, connecting portion (41 and 42) and glue portion 5.Wherein, mould the support of frame 1 as heat-conducting substrate 2, mould frame 1 and there is groove (unmarked in figure), heat-conducting substrate 2, IC chip 3 and connecting portion are all in a groove built-in, glue portion 5 fills in a groove, groove preferably can be filled and led up by glue portion 5, be appreciated that glue portion 5 heat-conducting substrate 2, IC chip 3 and connecting portion all built-in in a groove after formed again.
Heat-conducting substrate 2 is fixed on the bottom surface of groove, heat-conducting substrate 2 is installed IC chip 3, IC chip 3 numbers not as limiting, it can be one or more, when IC chip 3 is many, the structure after encapsulation also can do further segmentation, to form many IC elements.In groove, be also provided with connecting portion, IC chip 3 and the electrode contacts be positioned at outside groove of moulding frame 1 are electrically connected by connecting portion, for the electric connection of IC chip 3 positive and negative electrode and signal electrode and external device (ED) or parts.
In one embodiment, connecting portion comprises conducting strip 41, connects wire 42 and draw wire (not shown).Conducting strip 41 is fixed on the bottom surface of groove, and the fixed area of conducting strip 41 is not overlapping with the fixed area of heat-conducting substrate 2.Connect the electrode contacts that wire one end connects IC chip 3, the other end connects the electrode contacts of conducting strip 41, and the number connecting wire 42 can be determined according to the number of chip electrode contact.Quote wire to extract from conducting strip 41, exit is connected to the electrode contacts moulding frame 1.Connecting wire 42 and draw wire and can be electrically connected in conducting strip 41, also can be same wire.
In preferred embodiment, conducting strip 41 is chosen as copper sheet, and heat-conducting substrate 2 is chosen as copper sheet equally.Preferentially adopt the higher and oxidation resistant thickness metal copper sheet between 0.1-0.3mm of conductive coefficient, copper sheet can be the alloy of fine copper or copper.
First a monoblock copper sheet is struck out required form, required electrode and the relatively large heat conduction pole of area is comprised in this shape, electrode is as conducting strip 41, heat conduction pole is as heat-conducting substrate 2, the design of electrode and heat conduction pole can be repeated in certain one piece of large area copper sheet, namely one piece of copper sheet can have multi-group electrode and heat conduction pole, is used for storing 1 hundred to hundreds of grain IC naked core (IC chip), and overall package becomes hundred to a hundreds of grain IC element.
Then by Shooting Technique copper sheet plastic cement is wrapped to form and moulds frame 1, mould frame 1 and there is groove, required heat conduction pole, electrode are exposed, and the material moulding frame 1 is such as PPA plastic cement (polyphthalamide) or PCT plastic cement (poly terephthalic acid cyclohexanol).
Then with elargol, IC naked core 3 is bundled in heat conduction extremely to go up, by gold thread or alloy wire, the positive and negative electrode of connection IC chip, signal electrode are connected with the electrode (conducting strip 41) on copper sheet, conducting strip 41 and the electrode contacts moulding frame 1 are coupled together by gold thread or alloy wire, the diameter of gold thread or alloy wire is optional between 0.02-0.03mm again.
Referring to Fig. 2, next mould in frame 1 formed glue portion 5, the base material in glue portion 5 is chosen as thermosetting resin.The base material in glue portion 5 is preferably the fire resistant resin of epoxy resin or silicones or silicones hydridization.Can the thermosetting black epoxy of heatproof 260 DEG C or silicones or hybrid resin after instillation solidification, resin heats baking thoroughly after solidification, and packaging technology completes.Finally, if the packaging body formed comprises multiple IC element that can work independently, then can implement Sheet Metal Forming Technology, the electrode on script one monoblock copper sheet and heat conduction pole be cut, forms packaged IC element single one by one.If the packaging body formed is originally as an IC element, then without the need to punching press.
In one embodiment, heat-conducting substrate 2 copper sheet that can comprise the bottom surface being fixed to groove and the silverskin that is covered on copper sheet; IC chip 3 is installed on heat-conducting substrate 2 by elargol.Concrete, IC chip 3 is bonded on silver-plated copper base by elargol, and on copper sheet, silver-plated film has two effects, and one is allow between elargol and heat-conducting substrate better bonding, and two is that silver-plated film can protect copper sheet not oxidized and corrode.One monoblock copper sheet is supported by the parcel of plastic cement, then be divided into the little dummy slider of 3-5, that dummy slider being wherein in the area of center maximum is heat-conducting substrate 2, alternatively heat sink, play the effect of passage of heat, other 2 or 3 or 4 copper dummy sliders can as conducting strip 41, and conducting strip 41 can be contact type electrode, can as galvanic positive and negative electrode, the electrode that also can input as signal.
As shown in Figure 3, for the heat conductor of a cuboid, the following formula of thermal resistance calculation:
R
Th＝L/(σA)
Wherein, L is length, and A is sectional area, and σ is the conductive coefficient of material.
In existing SOP encapsulating structure, although metal pins is thick, its passage of heat is horizontal, so thermal resistance is very large.If calculate the thermal resistance of this cuboid by horizontal direction, if a=0.01m, b=0.001m, c=0.1m, the conductive coefficient of copper is 360W/mK, then Rth=0.1/ (0.01*0.001*360)=28K/W.
In encapsulating structure of the present invention, passage of heat is vertical.If always calculate the thermal resistance of this cuboid by Vertical Square, then Rth=0.001/ (0.1*0.01*360)=28x10
-3k/W.
Comparatively speaking, the thermal resistance of thermal resistance of the present invention and existing SOP encapsulating structure is low 1000 times.By vertical direction, the thermal resistance that copper pin produces is negligible.The thermal resistance scope of IC element of the present invention is 2-10K*mm
2/ W.
The present invention reserves chip placement by the copper sheet front in the vertical direction that a slice is very thin, and the back side directly can be welded on the copper film of PCB with scolding tin, utilizes the copper film of PCB to be derived by heat, and principle is identical with reducing thermal resistance.When IC chip 3 is bundled in copper sheet and after having welded gold thread, adopts the method for dripping glue chip and gold thread to be wrapped up.Because this glue has mobility, and copper sheet needs support, thus adopt injection mo(u)lding plastic material will in advance stamping forming copper sheet wrap up, formation mould frame 1 bowl-like frame, the glue of flowing can be accepted.The technique of this glue adopts heat cured resin, and can be high temperature resistant to Reflow Soldering temperature 260 DEG C, as the fire resistant resin of epoxy resin and silicones hydridization.
Preferably, IC chip is linear constant current driving IC chip, and the IC element that encapsulation is formed is linear constant current drive IC element.Linear constant current drive IC element can be connected in the loop that plurality of LEDs (light-emitting diode) connects, and ensures the current constant of whole circuit loop, even if the excursion of input voltage is very large.This IC element is a kind of power device, and the dissipation power under its operating state can become along with the rising of voltage very large (2-4W).Final this dissipation power (i.e. heat) needs to be exchanged in air by radiating management design to go, otherwise the temperature of IC can be very high, cannot normally work.
The thermal resistance of the Linear Driving IC element of vertical heat transfer encapsulating structure of the present invention refers to and the thermal resistance between IC chip to copper sheet heat conduction pole (heat-conducting substrate) meets following formula:
Rth (IC element)=Rth (IC chip)+Rth (elargol)+Rth (heat-conducting substrate)
The thermal resistance of IC element of the present invention is described below by a specific embodiment, but not as limit.The area setting this IC chip is 0.5mm
2, chip Si-Substrate Thickness is 0.25mm, and latten(-tin) base thickness is 0.15mm, and elargol thickness is 0.02mm; The conductive coefficient of silicon is 149W/mK; Red copper is 360W/mK; Brass is 100W/mK; Three layers of mean coefficient of heat conductivity of elargol are 5.0W/mK (three layers of elargol refer to two interfacial layer and one deck intermediate layer).
Rth (chip)=0.25X10-3 (m)/{ 149 (W/mK) * 0.5X10-6 (m
2)=3.36K/W;
Rth (copper sheet heat conduction pole, vertical heat transfer part)=0.15X10-3 (m)/{ 360 (W/mK) * 0.5X10-6 (m
2)=0.83K/W
Rth (latten(-tin) heat conduction pole, vertical heat transfer part)=0.15X10-3 (m)/{ 100 (W/mK) * 0.5X10-6 (m
2)=3.00K/W
Rth (elargol and interface)=0.02X10-3 (m)/{ 5.0 (W/mK) * 0.5X10-6 (m
2)=8.00K/W;
So Rth (IC element, red copper)=12.19K/W; Rth (IC element, brass)=14.46K/W.
The present invention preferably have employed the elargol of alloying, three of elargol layers of mean coefficient of heat conductivity are made to bring up to 20-50W/mK, the thermal resistance being equivalent to elargol and interface is down to 0.8-2.0K/W, and like this, the entire thermal resistance (copper sheet heat conduction pole) of IC element is down to 5.0-6.2K/W.
Linear constant current drive IC element of the present invention, for 0.5mm
2the naked core of area, integral member thermal resistance can control at 5.0-15.0K/W, far below existing level commercially, i.e. 40-100K/W.
Although the present invention with preferred embodiment openly as above; but it is not for limiting claim; any those skilled in the art without departing from the spirit and scope of the present invention; can make possible variation and amendment, the scope that therefore protection scope of the present invention should define with the claims in the present invention is as the criterion.
Claims (10)
1. an IC element for vertical heat transfer encapsulating structure, is characterized in that, comprising: one there is a groove mould frame; One heat-conducting substrate being fixed to the bottom surface of described groove; At least one IC chip be installed on described heat-conducting substrate; At least onely to be arranged in described groove and by described IC chip and the described connecting portion being positioned at the electrode contacts electrical connection outside groove moulding frame; And the glue portion of moulding described in being filled in the groove of frame.
2. the IC element of vertical heat transfer encapsulating structure as claimed in claim 1, it is characterized in that, described connecting portion comprises: the conducting strip being fixed to the bottom surface of described groove; Connect the connection wire of the electrode contacts of described IC chip and the electrode contacts of described conducting strip; And to draw from described conducting strip and to mould the extraction wire of the electrode contacts of frame described in being connected to.
3. the IC element of vertical heat transfer encapsulating structure as claimed in claim 1, it is characterized in that, described conducting strip is copper sheet.
4. the IC element of vertical heat transfer encapsulating structure as claimed in claim 1, is characterized in that, the copper sheet that described heat-conducting substrate comprises the bottom surface being fixed to described groove and the silverskin be covered on described copper sheet; Described IC chip is installed on described heat-conducting substrate by elargol.
5. the IC element of the vertical heat transfer encapsulating structure as described in claim 3 or 4, is characterized in that, described copper sheet is the alloy of fine copper or copper, and the thickness range of copper sheet is 0.1-0.3mm.
6. the IC element of vertical heat transfer encapsulating structure as claimed in claim 4, it is characterized in that, described elargol is the elargol of alloying.
7. the IC element of vertical heat transfer encapsulating structure as claimed in claim 1, it is characterized in that, the base material in described glue portion is thermosetting resin.
8. the IC element of vertical heat transfer encapsulating structure as claimed in claim 7, it is characterized in that, the base material in described glue portion is the fire resistant resin of epoxy resin or silicones or silicones hydridization.
9. the IC element of vertical heat transfer encapsulating structure as claimed in claim 1, it is characterized in that, described IC chip is linear constant current driving IC chip.
10. the IC element of vertical heat transfer encapsulating structure as claimed in claim 9, it is characterized in that, the thermal resistance scope of described IC element is 2-10K*mm
2/ W.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610111211.1A CN105575921A (en) | 2016-02-29 | 2016-02-29 | IC component for vertical heat conduction package structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610111211.1A CN105575921A (en) | 2016-02-29 | 2016-02-29 | IC component for vertical heat conduction package structure |
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| Publication Number | Publication Date |
|---|---|
| CN105575921A true CN105575921A (en) | 2016-05-11 |
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ID=55885897
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| CN201610111211.1A Pending CN105575921A (en) | 2016-02-29 | 2016-02-29 | IC component for vertical heat conduction package structure |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030011054A1 (en) * | 2001-06-11 | 2003-01-16 | Fairchild Semiconductor Corporation | Power module package having improved heat dissipating capability |
| CN101154703A (en) * | 2001-04-10 | 2008-04-02 | 奥斯兰姆奥普托半导体有限责任公司 | Housing for a radiation-emitting component, radiation emitting component and method for producing the same |
| CN201204209Y (en) * | 2008-02-02 | 2009-03-04 | 大铎精密工业股份有限公司 | LED down-lead base |
| CN101523621A (en) * | 2006-09-29 | 2009-09-02 | 奥斯兰姆奥普托半导体有限责任公司 | Housing for an optoelectronic component, optoelectronic component and method for producing a housing for an optoelectronic component |
| CN205582916U (en) * | 2016-02-29 | 2016-09-14 | 卓广实业（上海）有限公司 | Perpendicular heat conduction packaging structure's IC component |
-
2016
- 2016-02-29 CN CN201610111211.1A patent/CN105575921A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101154703A (en) * | 2001-04-10 | 2008-04-02 | 奥斯兰姆奥普托半导体有限责任公司 | Housing for a radiation-emitting component, radiation emitting component and method for producing the same |
| US20030011054A1 (en) * | 2001-06-11 | 2003-01-16 | Fairchild Semiconductor Corporation | Power module package having improved heat dissipating capability |
| CN101523621A (en) * | 2006-09-29 | 2009-09-02 | 奥斯兰姆奥普托半导体有限责任公司 | Housing for an optoelectronic component, optoelectronic component and method for producing a housing for an optoelectronic component |
| CN201204209Y (en) * | 2008-02-02 | 2009-03-04 | 大铎精密工业股份有限公司 | LED down-lead base |
| CN205582916U (en) * | 2016-02-29 | 2016-09-14 | 卓广实业（上海）有限公司 | Perpendicular heat conduction packaging structure's IC component |
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Application publication date: 20160511 |