CN105568386A - Gallium nitride (GaN) hetero-epitaxial growing method - Google Patents

Gallium nitride (GaN) hetero-epitaxial growing method Download PDF

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Publication number
CN105568386A
CN105568386A CN201511032117.9A CN201511032117A CN105568386A CN 105568386 A CN105568386 A CN 105568386A CN 201511032117 A CN201511032117 A CN 201511032117A CN 105568386 A CN105568386 A CN 105568386A
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gan
substrate
clamping part
heteroepitaxial growth
growth
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CN105568386B (en
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王嘉
谢亚宏
胡晓东
秦宇航
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Shanghai Lanye Material Technology Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The invention belongs to the field of semiconductor photoelectron, relates to the technical fields of hetero-epitaxial growth of semiconductor film material and hydride vapor phase epitaxy (HPVE), and discloses a gallium nitride (GaN) hetero-epitaxial growing method. The method has the advantages of convenient operation and low cost, and is capable of prominently reducing the angularity caused by thermal stress of epitaxial film to obtain a GaN epitaxial layer, which barely has warping.

Description

A kind of method of heteroepitaxial growth gan (GaN)
Technical field
The invention belongs to semi-conductor photoelectronic field, relate to epitaxy and hydride vapor phase epitaxy (HVPE) technical field of semiconductor film material, particularly relate to a kind of utilize vertically place substrate realize substrate two-sided while growing gallium nitride (GaN) method.
Background technology
With the wide bandgap semiconductor that the 3rd main group nitride is representative, obtain commercial applications widely in field of optoelectronic devices such as blue light and white light LEDs, royal purple and extreme ultraviolet laser apparatus, and in power electronic device field, there is considerable application prospect.
Be different from the semiconductor material such as silicon and gallium arsenide, from gan melt, directly prepare mono-crystal gallium nitride there is no method realization (needing the high temperature of about 40,000 atmospheric high pressure and 2,500 degrees Celsius in theory) at present, and the solution through High Temperature High Pressure prepares the method for mono-crystal gallium nitride as extremely difficult and expensive (in many countries as China also exists the relevant legal restrictions of safety in production) such as the hot methods of ammonia, and current mono-crystal gallium nitride is still based on the vapour phase epitaxy sedimentation in foreign substrate (i.e. non-nitriding gallium substrate).Due to the coefficient of thermal expansion mismatch (namely the material degree of expanding with heat and contract with cold is different) of foreign substrate and gan, the gan of hetero epitaxy is down to by growth temperature the thermal stresses produced in normal temperature process and is often caused the problems such as wafer ftractures and silicon wafer warpage is serious.
In the method for vapour phase epitaxy, hydride vapour phase epitaxy method (HVPE) prepares the most frequently used means of gallium nitride substrate at present because its advantage such as the very fast speed of growth, very high cost performance becomes, be different from gas phase epitaxy of metal organic compound (MOCVD), molecular beam epitaxy (MBE) homepitaxy growth means (film thickness of growth is usually in several microns), thicker gan (more than hundreds of micron) can be grown by HVPE, after this thick film and substrate separation, subsequent growth can be carried out as excellent self-supporting protoplasm substrate.But because epitaxial film is thicker, thermal stresses is larger, the thermal stress issues that the gallium nitride thick film of HVPE method growth and the coefficient of thermal expansion mismatch of foreign substrate cause can be more serious, makes the gallium nitride epitaxial film generation warpage in growth room.The gan of serious warpage can not be directly used in MOCVD or MBE and carry out subsequent growth.Common way be undertaken grinding by chemically machinery polished (CMP), polishing, obtain qualified GaN substrate.But the useful area of the substrate of this method acquisition is limited, only can obtain quality in central zone higher, close to the substrate surface of single low index crystal plane, outer peripheral areas is then made up of (Fig. 1) the crystal face of many high index.
Therefore, solve the mismatch especially thermal mismatch problem of foreign substrate and epitaxial layer of gallium nitride, need new growing technology scheme to overcome, this has great importance and practical value to the performance boost of gallium nitrate based opto-electronic device and power electronic device and the raising of producing yield.
Summary of the invention
For the problems referred to above, the object of this invention is to provide a kind of method of epitaxial growth of gallium nitride.The method is not only easy and simple to handle, with low cost, significantly can also reduce the angularity that epitaxial film produces because of thermal stresses, to obtain the GaN epitaxial layer close to zero warpage.
The present invention needs the technical scheme protected to be characterized by:
Summarize and say, the present invention proposes to utilize hydride gas-phase epitaxy (HVPE) system growing gallium nitride epitaxial film simultaneously on the substrate two sides of twin polishing first.
Concrete enforcement, is rested on the substrate of script horizontal positioned on pallet on pallet by riding.。
Concrete enforcement, vertically places substrate in growth furnace.
Concrete enforcement, in order to make substrate vertically place, devises sample clamping utensil, this utensil comprises pedestal and clamping part, pedestal is for being positioned over the pallet in epitaxial system, and the base portion of the clamping part that described pedestal is propped up by its column, described clamping part also comprises the holding piece of opening.
Further repacking clamping part, increases rotary driving part and propulsion source, substrate can be rotated on the holder portion under vertical state, or clamping part is with substrate " integral type " vertically state ground integral-rotation.
Optimize, described sample clamping utensil also comprises flabellum, and flabellum is coaxial or coaxial with clamping part, and pedestal props up flabellum and clamping part by its column.
Further optimization limits protection domain, and described clamping part is designed to the arc clip of evagination.
Further optimization limits protection domain, and described flabellum and clamping part are in heteropleural, and both axles are installed on column top, make substrate keep vertical vacant state on the holder portion.
Concrete enforcement, preferred embodiment method is:
(1) first get any one side of the substrate of twin polishing, lie against on pallet, at upper strata growing aluminum nitride (AlN) forming core grown layer;
(2) substrate of step (1) gained is inverted, under similarity condition and growth parameter(s), aluminium nitride forming core grown layer is carried out to another side, thus complete the preparation step of pre-extension;
(3) step (2) gained substrate maintenance vertical state, epitaxy is carried out in its two sides simultaneously, obtains two symmetrical GaN epitaxy films.
Be different from the method for conventional horizontal positioned substrate, in growth furnace vertically/or two sides of contactless tilted-putted substrate because being in identical transient growth environment simultaneously, the epitaxial film that structure and pattern are symmetrical can be grown everywhere, thus the epitaxial film warpage effect making the thermal stresses produced because of the coefficient of thermal expansion mismatch of epitaxial film and substrate in system cools process cause is because offsetting on the contrary mutually, thus obtain the extremely low gallium nitride epitaxial film of angularity in equal and opposite in direction, direction.
Accompanying drawing explanation
Fig. 1 is conventional one side growth and the contrast schematic diagram of two-sided growth of the present invention.
Fig. 2 is the schematic diagram (be provided with substrate) of clamping device in HVPE system growth furnace.
Fig. 3 is the schematic diagram (be not provided with substrate) of clamping device in HVPE system growth furnace.
Fig. 4 is the schematic diagram of special wafer clamping device.
Fig. 5 is the scanning electronic microscope partial cross-section photo of two-sided GaN.
Embodiment
Below in conjunction with accompanying drawing, exhaustive presentation is carried out to the essence of technical solution of the present invention.
For produced problem in prior art, the invention provides a kind of method of epitaxial growth of gallium nitride.The method significantly can reduce the angularity that epitaxial film produces because of thermal stresses, obtains the GaN epitaxial layer close to zero warpage.
Conventional epitaxy is only carried out at the glazed surface of single-sided polishing substrate.Even if need two-sided growth under particular requirement, also first complete a surperficial growth on the substrate of twin polishing after, then substrate taken out and is inverted into after processing, proceeding the growth of reverse side.But after the growth on a surface completes, if when the epitaxial film of Heteroepitaxy is thicker, thermal stresses makes wafer obviously warpage occur in temperature-fall period, be now unfavorable for that follow-up second takes turns and carry out reverse side growth.
And the two-sided growth that the present invention uses, different from ordinary method, in a secondary growth, original position (in-situ) is carried out simultaneously.Substrate is in vertical laying state/or contactless inclination state in epitaxial system, two surfaces of the substrate of this state are in identical transient growth environment, have identical thickness distribution and similar micro-raman spectra and structure (Fig. 5) at the two-sided GaN thick film grown of substrate simultaneously.In process of cooling, the moment equal and opposite in direction everywhere with warpage wafer (wafer) effect that thermal stresses suffered by two epitaxial films produces, direction is contrary, has " symmetric effect ", therefore the effect of warpage wafer is cancelled out each other, thus can obtain the extremely low wafer of angularity.
Conventional one side grows with the growth of two-sided growth of the present invention, cools warpage and the contrast being separated polishing, as shown in Figure 1.
Fig. 5 is the local section cross-sectional view that substrate two sides that scanning electronic microscope (producer: FEI, model: NovaNanoSEM230) is taken has grown GaN thick film.As seen from Figure 5, by the Successful utilization of the method, the adjustment comprising growth parameter(s) controls, the appropriate design of current-carrying air-flow and the assembling of substrate holder tool, at the GaN thick film that the upper and lower faces equal epitaxy thickness of two throwing substrate is identical.After strip operation, the GaN substrate of self-supporting can be become with the GaN thick film of substrate separation, and there is extremely low angularity.Under the surfaceness pole low condition of epitaxial film, even can in order to avoid grinding and the process of polishing, for subsequent growth with obtain high-quality opto-electronic device in applying and power electronic device is laid a good foundation.Technique and skill of the present invention, solves the problem of prior art substantially, up hill and dale, and method is very simple, but Be very effective, huge to the contribution of prior art.
Based on above Method And Principle, the present invention provides some embodiments.
Embodiment 1
In order to make substrate vertically place, the present embodiment devises sample clamping utensil 1.
As Fig. 2, Fig. 3, this utensil comprises pedestal 11 and clamping part 12, and pedestal is for being positioned over the pallet 2 in epitaxial system.The base portion of the clamping part that described pedestal is propped up by its column 15, described clamping part also comprises the holding piece 121 of opening.
In order to the substrate vertically placed can rotate in process of growth, make growth distribution more even, the present embodiment reequips clamping part further, increase rotary driving part and propulsion source, substrate can be rotated on the holder portion under vertical state, or clamping part is with substrate " integral type " vertically state ground integral-rotation.
Embodiment 2
Compared to embodiment 1, the present embodiment comprises flabellum 13, and flabellum is coaxial or coaxial with clamping part, and pedestal props up flabellum and clamping part by its column.As Fig. 3.
Further optimization limits protection domain, and described clamping part is designed to the arc clip of evagination.
Further optimization limits protection domain, and described flabellum and clamping part are in heteropleural, and both axles 14 are installed on column top, make substrate keep vertical vacant state on the holder portion.As shown in Figure 2, as windmill principle, the gas of inlet mouth drives flabellum, and the clamping part of the flabellum driving opposite side of rotation remains on vertical plane with substrate and rotates.
Embodiment 3
Being installed in epitaxial system as shown in Figure 2 and Figure 3 by sample clamping utensil in embodiment 2, belonging to application scenarios in epitaxial system, is prior art.
(1) first get any one side of the substrate of twin polishing, lie against on pallet, at upper strata growing aluminum nitride (AlN) forming core grown layer.This step belongs to prior art.
(2) substrate of step (1) gained is inverted, under similarity condition and growth parameter(s), aluminium nitride forming core grown layer is carried out to another side, thus complete the preparation step of pre-extension.This step belongs to prior art.
(3) be installed on the sample clamping utensil of embodiment 2 in the substrate of step (2) gained, under the rotation of fan, keep the substrate 4 of vertical state, epitaxy is carried out in its two sides simultaneously, obtain two symmetrical GaN epitaxy films.
Measure the surface curvature radius of step (3) gained substrate, this radius is used for characterizing the angularity of substrate, and radius is larger, and angularity is less.The radius that the present embodiment obtains is tending towards infinitely great.
Embodiment 4
Epitaxial growth method is hydride gas-phase epitaxy (HVPE) deposition.The surface curvature radius of reply prior art " one side extension " substrate is little, angularity is larger, what two of sample faces all can be equal to by the present embodiment employing is in the local current-carrying environment of depositing system, is rested on pallet by the substrate of script horizontal positioned on pallet by riding.
This support effect, even simple implementation is: rest on pallet 2 and epitaxial chamber's inwall 3 by the substrate tilting of script horizontal positioned on pallet, pallet and epitaxial chamber's inwall have two stress points respectively.
The method is simple, compared to prior art effect and significantly, and the ingenious technical problem solving prior art up hill and dale.
The further expansion of following content is not that technical solution of the present invention completes the required disclosed technical characteristic of invention task institute.
Substrate is two throwing Sapphire Substrate, also can be substituted by substrates such as two throwing silicon carbide, two throwing silicon and two throwing gallium arsenide, reach the object of hetero epitaxy.
The material that special device of the present invention is selected can be titanium, also can be formed by the one or more combination of the refractory metals such as tungsten and the stupalith such as alloy or quartz, the thermostability that material require is good, and fusing point or softening temperature must far above 1,000 degrees centigrade growth temperatures.
In embodiment 3, the aluminium nitride forming core layer in step (1), also can by sosoloid (the molecular formula Al of gan or aluminium nitride and gan xga (1-x)n (0<x<1)) substitute.It should be noted that when selecting gan, in step (2), need the gan forming core layer handling growth in step (1) well that the problem of non-uniform decomposition (incongruentdecomposition) may occur.
In step (1), step (2), forming core grown layer is by metal organic chemical vapor deposition (MOCVD), plasma reinforced chemical vapour deposition (PECVD), the method that one or more epitaxy methods in molecular beam epitaxy (MBE) combine obtains, and object is the crystal mass (comprising the improvement of the indexs such as surfaceness, crackle and defect concentration) of the gan of growth in remarkable lifting step (3).This belongs to prior art.
During concrete operations, also often before growth, described GaN substrate is cleaned.This belongs to conventional steps.
In step (3), epitaxial growth conditions is: current-carrying gas is nitrogen, hydrogen or the mixed gas of the two, and temperature is 1050 degrees Celsius, and pressure is normal pressure or negative pressure.This belongs to prior art.

Claims (10)

1. a method for heteroepitaxial growth gan (GaN), is characterized in that, utilizes hydride gas-phase epitaxy (HVPE) system growing gallium nitride epitaxial film simultaneously on the substrate two sides of twin polishing.
2. the method for heteroepitaxial growth gan (GaN) as claimed in claim 1, is characterized in that, is rested on pallet by the substrate of script horizontal positioned on pallet by riding.
3. the method for heteroepitaxial growth gan (GaN) as claimed in claim 1, is characterized in that, in growth furnace, vertically place substrate.
4. the method for heteroepitaxial growth gan (GaN) as claimed in claim 3, it is characterized in that, vertically place to make substrate, devise sample clamping utensil, this utensil comprises pedestal and clamping part, pedestal is for being positioned over the pallet in epitaxial system, and the base portion of the clamping part that described pedestal is propped up by its column, described clamping part also comprises the holding piece of opening.
5. the method for heteroepitaxial growth gan (GaN) as claimed in claim 4, is characterized in that, described clamping part, increases rotary driving part and propulsion source, substrate can be rotated on the holder portion under vertical state.
6. the method for heteroepitaxial growth gan (GaN) as claimed in claim 4, is characterized in that, described clamping part, increases rotary driving part and propulsion source, makes clamping part with substrate " integral type " vertically state ground integral-rotation.
7. the method for heteroepitaxial growth gan (GaN) as claimed in claim 4, it is characterized in that, described sample clamping utensil also comprises flabellum, and flabellum is coaxial or coaxial with clamping part, and pedestal props up flabellum and clamping part by its column.
8. the method for the heteroepitaxial growth gan (GaN) as described in as arbitrary in claim 4 to 7, it is characterized in that, described clamping part is designed to the arc clip of evagination.
9. the method for the heteroepitaxial growth gan (GaN) as described in as arbitrary in claim 4 to 8, it is characterized in that, described flabellum and clamping part are in heteropleural, and both axles are installed on column top, make substrate keep vertical vacant state on the holder portion.
10. the method for heteroepitaxial growth gan (GaN) as claimed in claim 1, it is characterized in that, concrete grammar is:
(1) first get any one side of the substrate of twin polishing, lie against on pallet, at upper strata growing aluminum nitride (AlN) forming core grown layer;
(2) substrate of step (1) gained is inverted, under similarity condition and growth parameter(s), aluminium nitride forming core grown layer is carried out to another side, thus complete the preparation step of pre-extension;
(3) step (2) gained substrate maintenance vertical state, epitaxy is carried out in its two sides simultaneously, obtains two symmetrical GaN epitaxy films.
CN201511032117.9A 2015-12-31 2015-12-31 A kind of heteroepitaxial growth gallium nitride（GaN）Method Active CN105568386B (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113186511A (en) * 2020-12-06 2021-07-30 无锡英诺赛思科技有限公司 But full-vertical HPVE equipment of volume production gallium nitride
CN114649198A (en) * 2022-03-10 2022-06-21 镓特半导体科技（上海）有限公司 Preparation method of semiconductor structure, self-supporting gallium nitride layer and preparation method thereof
CN114775044A (en) * 2022-05-11 2022-07-22 华厦半导体(深圳)有限公司 Gallium nitride substrate growth thermal field device
CN115483273A (en) * 2022-09-19 2022-12-16 镓特半导体科技（上海）有限公司 High flatness HVPE gallium nitride single crystal substrate and preparation method thereof

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Publication number Priority date Publication date Assignee Title
CN102969410A (en) * 2012-11-30 2013-03-13 中国科学院半导体研究所 Method for preparing LED (Light-Emitting Diode) with GaN thick film vertical structure
CN104143497A (en) * 2013-05-08 2014-11-12 上海华虹宏力半导体制造有限公司 Method for manufacturing GaN epitaxial wafers or GaN substrates
CN105845798A (en) * 2015-01-16 2016-08-10 北京大学 Method of preparing warp-free group-III nitride composite substrate and substrate placing device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102969410A (en) * 2012-11-30 2013-03-13 中国科学院半导体研究所 Method for preparing LED (Light-Emitting Diode) with GaN thick film vertical structure
CN104143497A (en) * 2013-05-08 2014-11-12 上海华虹宏力半导体制造有限公司 Method for manufacturing GaN epitaxial wafers or GaN substrates
CN105845798A (en) * 2015-01-16 2016-08-10 北京大学 Method of preparing warp-free group-III nitride composite substrate and substrate placing device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113186511A (en) * 2020-12-06 2021-07-30 无锡英诺赛思科技有限公司 But full-vertical HPVE equipment of volume production gallium nitride
CN114649198A (en) * 2022-03-10 2022-06-21 镓特半导体科技（上海）有限公司 Preparation method of semiconductor structure, self-supporting gallium nitride layer and preparation method thereof
CN114775044A (en) * 2022-05-11 2022-07-22 华厦半导体(深圳)有限公司 Gallium nitride substrate growth thermal field device
CN114775044B (en) * 2022-05-11 2024-01-12 华厦半导体(深圳)有限公司 Gallium nitride substrate growth thermal field device
CN115483273A (en) * 2022-09-19 2022-12-16 镓特半导体科技（上海）有限公司 High flatness HVPE gallium nitride single crystal substrate and preparation method thereof

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