CN101812725B - Growth method of phase-change nucleation in epitaxy of gallium nitride - Google Patents
Growth method of phase-change nucleation in epitaxy of gallium nitride Download PDFInfo
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- CN101812725B CN101812725B CN2010101450873A CN201010145087A CN101812725B CN 101812725 B CN101812725 B CN 101812725B CN 2010101450873 A CN2010101450873 A CN 2010101450873A CN 201010145087 A CN201010145087 A CN 201010145087A CN 101812725 B CN101812725 B CN 101812725B
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- gallium nitride
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- phase
- nucleation
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 69
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 65
- 230000012010 growth Effects 0.000 title claims abstract description 64
- 238000000034 method Methods 0.000 title claims abstract description 23
- 230000006911 nucleation Effects 0.000 title claims abstract description 23
- 238000010899 nucleation Methods 0.000 title claims abstract description 23
- 238000000407 epitaxy Methods 0.000 title claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 238000002360 preparation method Methods 0.000 claims abstract description 3
- 150000002902 organometallic compounds Chemical class 0.000 claims abstract 2
- 230000007704 transition Effects 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 10
- 238000011084 recovery Methods 0.000 claims description 10
- 239000013078 crystal Substances 0.000 claims description 6
- 230000009466 transformation Effects 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 1
- 238000002425 crystallisation Methods 0.000 abstract 1
- 230000008025 crystallization Effects 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 230000003698 anagen phase Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- CHPZKNULDCNCBW-UHFFFAOYSA-N gallium nitrate Chemical compound [Ga+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O CHPZKNULDCNCBW-UHFFFAOYSA-N 0.000 description 2
- 230000007773 growth pattern Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229940044658 gallium nitrate Drugs 0.000 description 1
- -1 gallium nitrides Chemical class 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
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Abstract
The invention relates to a growth method of phase-change nucleation in the epitaxy of gallium nitride, which comprises the following steps of: (1) selecting a substrate; (2) growing a gallium nitride nucleation layer on the substrate by adopting a metal organic compound vapour deposition method, wherein the gallium nitride nucleation layer is a phase-change buffer layer; and (3) growing an unintentional doped gallium nitride layer which is a gallium nitride layer with high crystallization quality on the gallium nitride nucleation layer so as to finish growing preparation.
Description
Technical field
The invention belongs to technical field of semiconductors, be meant the growing method of the phase-change nucleation in a kind of epitaxy of gallium nitride especially.
Background technology
The LED industry belongs to the relevant high-tech industry of semiconductor, the chip (extension) that is in the upstream is the key of whole industry often, the performance and the price of middle and lower reaches products that this not only has been embodied in the performance of upstream chip (extension) and price decision also is embodied in patent and standard that chip (extension) supplier is often controlling whole industry.The performance of led chip (extension) has determined the performance of entire product to a great extent.
Although gallium nitrate based III-V family semiconductor has some major defects, as high dislocation density and strong polarity effect, it has become a source material full of hope.Recently, gallium nitride based light emitting diode (LED) is enlarging application rapidly, particularly needs the field of super brightness, as the back light unit of large scale screen and the solid-state lighting system of replacement conventional fluorescent and incandescent lamp bulb.
The MOCVD of gallium nitride generally adopts outer Yanzhong is the method grown buffer layer by the low temperature nucleation earlier on substrate, elevated temperature then, the gallium nitride layer of grow thereon non-doping or silicon doping.The penetrability dislocation that this growth pattern caused can extend to the surface, the device performance that influences material itself and prepare thereon.
Summary of the invention
The objective of the invention is to, the growing method of the phase-change nucleation in a kind of epitaxy of gallium nitride is provided, this method is to have a mind to mix by non-, the control growing condition, changed the nucleating growth pattern, effectively alleviate the stress that lattice mismatch produced, improved crystal mass, grown high-quality intrinsic gallium nitride material.
The invention provides the growing method of the phase-change nucleation in a kind of epitaxy of gallium nitride, comprising:
Step 1: select a substrate;
Step 2: adopt metal organic chemical compound vapor deposition method growing gallium nitride nucleating layer on substrate, this gallium nitride nucleating layer is the phase transformation resilient coating;
Step 3: the non-doped gallium nitride layer intentionally of growth on the gallium nitride nucleating layer, this non-doped gallium nitride layer intentionally is high crystalline quality gallium nitride layer, finishes growing and preparing.
Wherein said gallium nitride nucleating layer comprises: the phase transition layer of gallium nitride nucleating layer and growth successively and zone of recovery mutually.
The material of wherein said substrate is sapphire, carborundum, silicon or GaAs.
Wherein the growth temperature of a gallium nitride nucleating layer is 500-800 ℃, and growth pressure is 400-600torr, and growth thickness is 0.01-0.06 μ m.
Wherein the growth temperature of phase transition layer is between 600-900 ℃, and growth pressure is 100-400torr, and growth thickness is 0.05-0.2 μ m.
Wherein the growth temperature of phase zone of recovery is between 800-1000 ℃, and growth pressure is 100-300torr, and growth thickness is 0.05-0.5 μ m.
Wherein non-growth temperature of having a mind to doped gallium nitride layer is 1000-1100 ℃, and pressure is 200-400torr, and growth thickness is 1-5 μ m.
Wherein phase transition layer and phase zone of recovery are cube phase or hexagonal phase.
Description of drawings
For making the auditor can further understand structure of the present invention, feature and purpose thereof, below in conjunction with the detailed description of accompanying drawing and preferred embodiment as after, wherein:
Fig. 1 is an epitaxy of gallium nitride structural representation of the present invention.
Fig. 2 is a gallium nitride nucleating layer structural representation of the present invention.
Fig. 3 is epitaxial growth GaN high-resolution X ray of the present invention (0002) face swing curve half-peak breadth test result figure.
Fig. 4 is epitaxial growth GaN high-resolution X ray of the present invention (10-12) face swing curve half-peak breadth test result figure.
Fig. 5 is the utmost point figure of epitaxial growth GaN high-resolution X ray of the present invention (10-12) crystal face.
Fig. 6 is three symmetrical scannings of high-resolution X ray (10-12) crystal face of epitaxial growth GaN of the present invention.
Embodiment
Key of the present invention has been to add the phase transition layer of gallium nitride.Must cooperatively interact by two kinds of growth phases, eliminate the mismatch stress of epitaxial loayer and substrate in the certain limit.Can draw deviation by different crystalline lattice, threading dislocation is limited to below the non-doped gallium nitride, can improve the performance of the device of preparation on it greatly.
See also Figure 1 and Figure 2, the invention provides the growing method of the phase-change nucleation in a kind of epitaxy of gallium nitride, comprising:
Step 1: select a substrate 1, the material of described substrate 1 is sapphire, carborundum, silicon or GaAs;
Step 2: on substrate 1, adopt metal organic chemical compound vapor deposition method growing gallium nitride nucleating layer 2, this gallium nitride nucleating layer 2 is the phase transformation resilient coating, and described gallium nitride nucleating layer 2 comprises: a gallium nitride nucleating layer 21 and phase transition layer 22, the phase zone of recovery 23 of growing successively; The growth temperature of a described gallium nitride nucleating layer 21 is 500-800 ℃, and growth pressure is 400-600torr, and growth thickness is 0.01-0.06 μ m; The growth temperature of described phase transition layer 22 is between 600-900 ℃, and growth pressure is 100-400torr, and growth thickness is 0.05-0.2 μ m; The growth temperature of described phase zone of recovery 23 is between 800-1000 ℃, and growth pressure is 100-300torr, and growth thickness is 0.05-0.5 μ m; Described phase transition layer 22 and phase zone of recovery 23 are cube phase or hexagonal phase;
Step 3: the non-doped gallium nitride layer 3 intentionally of growth on gallium nitride nucleating layer 2, this non-doped gallium nitride layer 3 intentionally is high crystalline quality gallium nitride layer, described non-growth temperature of having a mind to doped gallium nitride layer 3 is 1000-1100 ℃, pressure is 200-400torr, growth thickness is 1-5 μ m, finishes growing and preparing.
Gallium nitride material with the method growth is the high-quality gallium nitride material, and favourable device architecture growth thereon is as LED, HBT, HEMT etc.
Embodiment
See also Figure 1 and Figure 2, the growing method of the phase-change nucleation in a kind of epitaxy of gallium nitride of the present invention, concrete mode be six sides mutually in insertion cube phase, comprise the steps:
When growing a gallium nitride nucleating layer 21 on Sapphire Substrate 1, growth temperature is 550 ℃, and growth pressure is 500torr, and growth thickness is 0.04 μ m.
During growth phase transition layer 22, growth temperature is 650 ℃ on gallium nitride nucleating layer 21, and growth pressure is 150torr, and growth thickness is 0.08 μ m.
When growing phase transformation zone of recovery 23 afterwards on phase transition layer 22, growth temperature is 900 ℃, and growth pressure is 200torr, and growth thickness is 0.15 μ m.
23 growing gallium nitrides are the high crystalline quality gallium nitride 3 of non-doping on the phase zone of recovery, and growth temperature is 1050 ℃, and pressure is 300torr, and growth thickness is 3 μ m.
The sample that is obtained by above step is carried out test analysis, the ω of X-ray double crystal diffraction (DCXRD) the scanning quality of materials that swing curve characterized obviously promotes as shown in Figure 3 and Figure 4, Fig. 5 and Fig. 6 high-resolution X ray 10-12 crystal face utmost point figure and three symmetric graph proofs have realized phase transition process with the gallium nitride of the method growth, have improved the quality of gallium nitride material.
The above; only be the embodiment among the present invention, but protection scope of the present invention is not limited thereto, anyly is familiar with the people of this technology in the disclosed technical scope of the present invention; the conversion that can expect easily or replacement all should be encompassed in of the present invention comprising within the scope.Therefore, protection scope of the present invention should be as the criterion with the protection range of claims.
Claims (7)
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| CN2010101450873A CN101812725B (en) | 2010-04-09 | 2010-04-09 | Growth method of phase-change nucleation in epitaxy of gallium nitride |
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| CN1779910A (en) * | 2004-11-25 | 2006-05-31 | 中国科学院半导体研究所 | Method for growing gallium nitride free-standing substrate material on silicon substrate |
| US8362503B2 (en) * | 2007-03-09 | 2013-01-29 | Cree, Inc. | Thick nitride semiconductor structures with interlayer structures |
| CN100492592C (en) * | 2007-07-26 | 2009-05-27 | 西安电子科技大学 | Growth Method of GaN Thin Film Based on Al2O3 Substrate |
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