CN105424234A - Integrated device of pressure transducer and manufacturing method thereof - Google Patents
Integrated device of pressure transducer and manufacturing method thereof Download PDFInfo
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- CN105424234A CN105424234A CN201510866802.5A CN201510866802A CN105424234A CN 105424234 A CN105424234 A CN 105424234A CN 201510866802 A CN201510866802 A CN 201510866802A CN 105424234 A CN105424234 A CN 105424234A
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- 238000004519 manufacturing process Methods 0.000 title abstract description 3
- 230000005540 biological transmission Effects 0.000 claims abstract description 16
- 230000007704 transition Effects 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 6
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 5
- 238000000137 annealing Methods 0.000 claims description 5
- 238000001465 metallisation Methods 0.000 claims description 5
- 229910002601 GaN Inorganic materials 0.000 claims description 4
- 229910003460 diamond Inorganic materials 0.000 claims description 4
- 239000010432 diamond Substances 0.000 claims description 4
- 229910003465 moissanite Inorganic materials 0.000 claims description 4
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- 230000010354 integration Effects 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 abstract description 5
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 25
- 230000008859 change Effects 0.000 description 7
- 238000002360 preparation method Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 241000931705 Cicada Species 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/16—Measuring force or stress, in general using properties of piezoelectric devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/8252—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using III-V technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
- H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
- H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
- H01L27/0658—Vertical bipolar transistor in combination with resistors or capacitors
Abstract
The invention relates to the semiconductor manufacturing field and particularly provides an integrated device of a pressure transducer, thereby solving technical problems that the integration is low and the size is large according to the existing sensor and the sensor is easy to affect in an extreme environment. The provided integrated device comprises a substrate, an AlN nucleating layer, a GaN transition layer, and an N-GaN collector region layer, wherein the layers are formed successively from bottom to top. The N-GaN collector region layer has a device region and sensing regions located at the two sides of the device region; a P-GaN base region layer and collectors are formed on the N-GaN collector region layer in the device region; an N type emission region layer and base electrodes are formed on the P-GaN base region layer; an N<+>-GaN cap layer is formed on the N type transmitting region layer; and an emitter is formed on the N<+>-GaN cap layer. And a P-GaN base region layer, an N emission layer, an N <+> -GaN cap layer, a dielectric layer, and a TaN transmission line are formed on the N-GaN collector region layer in each sensing region. Therefore, the integration of the sensor is improved.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly relate to a kind of pressure transducer integrated device and preparation method thereof.
Background technology
TaN (tantalum nitride) material has excellent pressure and becomes characteristic, there is high high-temperature stability (fusing point is at about 3000 DEG C), lower temperature-coefficient of electrical resistance simultaneously, excellent hardness and wearing quality, can be used as sensor and be widely used for the aspects such as pressure, temperature, stress, hot-fluid.Due to above-mentioned, the transmission line that this TaN material is made has strain effect, and particularly, the resistance value of this TaN transmission line can change and marked change along with pressure, and namely produce piezoelectric signal, the marked change of transmission line resistance causes the change of transmission current,
GaN, as the Typical Representative of wide bandgap semiconductor, has the advantages such as working temperature is high, power stage density is large, high frequency performance good, capability of resistance to radiation is strong.Compared with traditional GaNHEMT device, GaNHBT is as how sub-device, there is the relatively better advantage such as the linearity, higher power control capabilities, the characteristic that electric current drives, be more suitable for being used as pressure transducer, and, GaN as third generation semiconductor, stable chemical nature, superior performance, GaN device can stand comparatively severe working environment, if normally work under high temperature, strong radiation environment.
In some specific field tests, need to carry out Real-Time Monitoring, such as, pressure monitor need be carried out to each assembly during the high-speed motion of the parts such as aircraft wing, train, oil probe, these parts more greatly, all need to adopt the high material of reliability due to the pressure be subject to, once reach material limits or have the stealthy damages such as micro-crack, need timely early warning, maintenance; The parts of high-speed motion generally all carried out aerodynamics, fluid mechanics optimization simultaneously, reduced the unnecessary impact caused test macro.
But existing test macro is because integrated level is not high, volume is comparatively large, easy affected technical matters under extreme environment.
Summary of the invention
The present invention is by providing a kind of pressure transducer integrated device and preparation method thereof, solve sensor integration degree in prior art not high, volume is comparatively large, easy affected technical matters under extreme environment, and then improve the integrated level of sensor, make normally to work under extreme environment.
The technical scheme of the embodiment of the present invention is specially:
A kind of pressure transducer integrated device, comprise the substrate, AlN nucleating layer, GaN transition layer, the N-GaN collector layer that are from bottom to top formed successively, there is device area at described N-GaN collector layer and be positioned at the sensitive zones of described device area both sides, the N-GaN collector layer of described device area is formed with P-GaN base layer and collector, described P-GaN base layer is formed with N-type emitter layer and base stage, described N-type emitter layer is formed with N
+-GaN cap, at described N
+-GaN cap is formed with emitter, the N-GaN collector layer of described sensitive zones is from bottom to top formed with P-GaN base layer, N-type emitter layer and N successively
+-GaN cap, dielectric layer, TaN transmission line.
Further, the quantity of described collector and described base stage is two, and described two collectors lay respectively at described P-GaN base layer both sides, and described two base stages lay respectively at described N-type emitter layer both sides.
Further, described base stage, emitter, collector all form Ohmic contact by high annealing.
Further, described backing material is any one in Si, SiC, GaN, sapphire, Diamond; The thickness of described AlN nucleating layer is 10nm ~ 500nm.
Further, the doping content of described GaN transition layer is less than or equal to 1 × 10
18cm
-3, thickness is 500nm ~ 3000nm; The doping content of described N-GaN collector layer is less than or equal to 5 × 10
17cm
-3, thickness is 0.5 μm ~ 3 μm.
Further, the doping content of P-GaN base layer is less than or equal to 5 × 10
17cm
-3, thickness is 20nm ~ 500nm; Described N
+the doping content of-GaN cap is greater than or less than 1 × 10
18cm
-3, thickness is 10nm ~ 500nm.
Further, the material of described N-type emitter layer is N-type N-Al
yga
1-yn, wherein y is 0 ~ 0.3, and the doping content of described N-type emitter layer is more than or equal to 1 × 10
17cm
-3, thickness is 10nm ~ 500nm.
Further, described dielectric layer material is SiO
2or SiN
x.
Further, the shape of described TaN transmission line is snakelike.
On the other hand, provide a kind of method for making of pressure transducer integrated device, comprise following content:
Substrate from bottom to top forms AlN nucleating layer, GaN transition layer, N-GaN collector layer, P-GaN base layer, N-type emitter layer and N successively
+-GaN cap, to obtain HBT epitaxial wafer;
Metallization medium layer on described HBT epitaxial wafer, and on described dielectric layer, etch GaNHBT region, to expose described N
+-GaN cap;
Described dielectric layer deposits TaN film;
In described GaNHBT region to described N
+-GaN cap, described N-type emitter layer and described P-GaN base layer etch, and expose the part surface of described N-GaN collector layer with P-GaN base layer described in the exposed portion, both sides at described N-type emitter layer in the both sides of described P-GaN base layer;
At described N
+-GaN cap deposits emitter, the P-GaN base layer of the both sides of described N-type emitter layer deposits base stage, at the N-GaN collector layer surface deposition collector of the both sides of described P-GaN base layer;
Respectively high annealing is carried out to described emitter, base stage, collector, form Ohmic contact.
The one or more technical schemes provided in the embodiment of the present invention, at least have following technique effect or advantage:
1, owing to adopting pressure transducer integrated device, comprising the substrate from bottom to top formed successively, AlN nucleating layer, GaN transition layer, N-GaN collector layer, there is device area at N-GaN collector layer and be positioned at the sensitive zones of described device area both sides, the N-GaN collector layer of device area is formed with P-GaN base layer and collector, P-GaN base layer is formed N-type emitter layer and base stage, N-type emitter layer is formed with N
+-GaN cap, at N
+-GaN cap is formed with emitter, the N-GaN collector layer of sensitive zones is from bottom to top formed with P-GaN base layer, N-type emitter layer and N successively
+-GaN cap, dielectric layer, TaN transmission line, solve sensor bulk in prior art comparatively large, easy affected technical matters under extreme environment, and then improve the integrated level of sensor, normally can work under extreme environment.
2, traditional devices is that TaN sensor and HBT are provided separately, volume is larger, be unfavorable for that device is integrated, the present invention is by this TaN sensor and the integrated setting of this HBT, effectively reduce volume, and, can on the basis not affecting original aerodynamics, Elementary Fluid Mechanics, monitoring transformation data in real time.
3, by the growth conditions of adjustment TaN distribution, as temperature, N dividing potential drop etc., the TaN distribution of different resistivity can be obtained.
4, GaN is as third generation semiconductor, stable chemical nature, superior performance, and GaN device can stand comparatively severe working environment, if normally work under high temperature, strong radiation environment, has greatly expanded the application of sensor.
Accompanying drawing explanation
Fig. 1 is the structural representation of pressure transducer integrated device in the embodiment of the present invention;
Fig. 2-Fig. 4 is the schematic flow sheet making pressure transducer integrated device in the embodiment of the present invention.
Embodiment
The present invention is by providing a kind of pressure transducer integrated device and preparation method thereof, solve in prior art that sensor integration degree is not high, volume is larger, easy affected technical matters under extreme environment, and then improve the integrated level of sensor, normally can work under extreme environment.
In order to solve, sensor integration degree in above-mentioned prior art is not high, volume is comparatively large, and easy affected technical matters under extreme environment, is described in detail technique scheme below in conjunction with Figure of description and concrete embodiment.
A kind of pressure transducer integrated device provided by the invention, as shown in Figure 1, this pressure transducer integrated device comprises: the substrate 101 from bottom to top formed successively, AlN nucleating layer 102, GaN transition layer 103, N-GaN collector layer 104, there is device area at N-GaN collector layer 104 and be positioned at the sensitive zones of device area both sides, the N-GaN collector layer 104 of device area is formed P-GaN base layer 105 and collector 106, P-GaN base layer 105 is formed N-type emitter layer 107 and base stage 108, N-type emitter layer 107 forms N
+-GaN cap 109, at N
+-GaN cap 109 is formed with emitter 110, the N-GaN collector layer 104 of sensitive zones from bottom to top forms P-GaN base layer 105, N-type emitter layer 107 and N successively
+-GaN cap 109, dielectric layer 111, TaN transmission line 112.
Concrete, the quantity of this collector 106 and base stage 108 is two, and two collectors lay respectively at P-GaN base layer 106 both sides, and two base stages lay respectively at N-type emitter layer both sides.This base stage 108, emitter 110, collector 106, all by high annealing, form Ohmic contact.Backing material is any one in Si, SiC, GaN, sapphire, Diamond.The thickness of AlN nucleating layer 102 is 10nm ~ 500nm.The doping content of GaN transition layer 103 is less than or equal to 1 × 10
18cm
-3, thickness is 500nm ~ 3000nm.The doping content of N-GaN collector layer 104 is less than or equal to 5 × 10
17cm
-3, thickness is 0.5 μm ~ 3 μm.The doping content of P-GaN base layer 105 is less than or equal to 5 × 10
17cm
-3, thickness is 20nm ~ 500nm.N-type launch site 107 is specially N-type N-Al
yga
1-yn, wherein y is 0 ~ 0.3, and the doping content of this N-type launch site 107 is more than or equal to 1 × 10
17cm
-3, thickness is 10nm ~ 500nm.N
+the doping content of-GaN cap 109 is greater than or less than 1 × 10
18cm
-3, thickness is 10nm ~ 500nm.Dielectric layer 111 material is SiO
2or SiN
x.The shape of TaN transmission line 112 is snakelike.
The embodiment of the present invention additionally provides a kind of method making pressure transducer integrated device, in the process making this pressure transducer integrated device, first make this HBT epitaxial wafer, from bottom to top form AlN nucleating layer 102, GaN transition layer 103, N-GaN collector layer 104, P-GaN base layer 105, N-type emitter layer 107 and N on the substrate 101
+-GaN cap 109.As shown in Figure 2.
In a particular embodiment, this substrate can adopt in Si, SiC, GaN, sapphire, Diamond any one, mainly adopt propping material, play a part to support.This AlN nucleating layer 102 thickness is between 10nm ~ 500nm, and this AlN nucleating layer 102 is beneficial to the growth of GaN, and then, on AlN nucleating layer 102, the GaN transition layer 103 of growth is N-type GaN, and wherein doping content is less than or equal to 1 × 10
18cm
-3, thickness is between 500nm ~ 3000nm, and 104 layers, this N-GaN collecting zone is N-type GaN, and doping content is less than or equal to 5 × 10
17cm
-3, thickness is at 0.5 μm ~ 3 μm.Then, P-GaN base layer 105 is P type GaN specifically, and doping content is less than or equal to 5 × 10
17cm
-3, thickness is between 20nm ~ 500nm.N-type launch site 107 is specially N-type N-Al
yga
1-yn, wherein y is 0 ~ 0.3, and the doping content of this N-type launch site 107 is more than or equal to 1 × 10
17cm
-3, thickness is between 10nm ~ 500nm, and based on the problem of Lattice Matching, therefore, this Al content generally can not more than 0.3.This N
+-GaN cap 109 is specially N-type GaN, and wherein doping content is greater than or less than 1 × 10
18cm
-3, thickness is between 10nm ~ 500nm.
Above-mentioned steps is making HBT epitaxial wafer, after preparing HBT epitaxial wafer, and metallization medium layer 111 on this HBT epitaxial wafer, and on described dielectric layer 111, etch GaNHBT region, to expose described N
+-GaN cap, specifically adopts film deposition techniques metallization medium layer 111 on this HBT epitaxial wafer such as photoetching and PECVD (plasma enhanced chemical vapor deposition method).The material of this dielectric layer 111 can adopt SiO
2or SiN
x, this dielectric layer 111 is used as device isolation, is separated by this TaN sensor with GaNHBT device.
Therefore, then on this dielectric layer 111, make TaN transmission line 112, concrete, dielectric layer 111 deposits TaN transmission line 112.As shown in Figure 3.
In a particular embodiment, specifically at SiO
2or SiN
xupper deposition TaN, specifically has two kinds of modes, the first, adopts masking process at N
2lower reactive sputter-deposition TaN transmission line 112, forms TaN distribution, and the depositional mode of this employing adopts high temperature deposition, and the scope of this high temperature deposition temperature is 150 ~ 330 DEG C, and, according to this temperature range, when different temperature values, the corresponding resistivity regulating TaN; The second, adopt at N
2lower reactive sputtering process, first sputters TaN, then exposes and etch formation TaN film.Shape and the length of the TaN film finally formed can set arbitrarily, and such as, the shape of this TaN film can be snakelike etc., has just no longer been described in detail in embodiments of the present invention.
Then in this GaNHBT region to this N
+-GaN cap 109, N-type emitter layer 107 and P-GaN base layer 105 etch successively, with this N-type emitter layer 107 exposed portion, both sides P-GaN base layer 105 and expose the part surface of N-GaN collector layer 104 in the both sides of this P-GaN base layer 105.As shown in Figure 4.
In a particular embodiment, etch in this GaNHBT region, first retain N
+the zone line E1 of-GaN cap, etching N
+the region E2 of-GaN cap both sides, thus P-GaN base layer is exposed immediately below the E2 of this region, then, retain near this N at this P-GaN base layer
+-GaN cap 109 and immediately below the subregion of N-type emitter layer 107, then etch in the region of these both sides, subregion, thus N-GaN collector layer 104 is exposed immediately below this region, and like this, the subregion retained by N-GaN collector layer 104, P-GaN base layer 105 and N
+-GaN cap 109 forms stepped appearance.
Then after formation stepped appearance, at this N
+-GaN cap 109 deposits emitter E, the P-GaN base layer 105 of the both sides of this N-type emitter layer 107 deposits base stage B, at the N-GaN collector layer 104 surface deposition collector C of the both sides of this P-GaN base layer 105, as shown in Figure 1.
Be adopt photoetching, metal deposition, stripping technology in a particular embodiment, this stepped appearance deposits the metal electrode of emitter E, base stage B, collector C respectively.
Finally adopt high annealing to make these electrodes above-mentioned form Ohmic contact, thus complete this pressure transducer integrated device.
By the pressure sensing integrated device of above-mentioned acquisition, improve integrated level, effectively reduce the volume of device, thus this device can made normally to work under extreme environment.
Although describe the preferred embodiments of the present invention, those skilled in the art once obtain the basic creative concept of cicada, then can make other change and amendment to these embodiments.So claims are intended to be interpreted as comprising preferred embodiment and falling into all changes and the amendment of the scope of the invention.
Obviously, those skilled in the art can carry out various change and modification to the present invention and not depart from the spirit and scope of the present invention.Like this, if these amendments of the present invention and modification belong within the scope of the claims in the present invention and equivalent technologies thereof, then the present invention is also intended to comprise these change and modification.
Claims (10)
1. a pressure transducer integrated device, it is characterized in that, comprise the substrate, AlN nucleating layer, GaN transition layer, the N-GaN collector layer that are from bottom to top formed successively, there is device area at described N-GaN collector layer and be positioned at the sensitive zones of described device area both sides, the N-GaN collector layer of described device area is formed with P-GaN base layer and collector, described P-GaN base layer is formed with N-type emitter layer and base stage, described N-type emitter layer is formed with N
+-GaN cap, at described N
+-GaN cap is formed with emitter, the N-GaN collector layer of described sensitive zones is from bottom to top formed with P-GaN base layer, N-type emitter layer and N successively
+-GaN cap, dielectric layer, TaN transmission line.
2. pressure transducer integrated device according to claim 1, it is characterized in that, the quantity of described collector and described base stage is two, and described two collectors lay respectively at described P-GaN base layer both sides, and described two base stages lay respectively at described N-type emitter layer both sides.
3. pressure transducer integrated device according to claim 1 and 2, is characterized in that, described base stage, emitter, collector all form Ohmic contact by high annealing.
4. pressure transducer integrated device according to claim 1, is characterized in that, described backing material is any one in Si, SiC, GaN, sapphire, Diamond; The thickness of described AlN nucleating layer is 10nm ~ 500nm.
5. pressure transducer integrated device according to claim 1, is characterized in that, the doping content of described GaN transition layer is less than or equal to 1 × 10
18cm
-3, thickness is 500nm ~ 3000nm; The doping content of described N-GaN collector layer is less than or equal to 5 × 10
17cm
-3, thickness is 0.5 μm ~ 3 μm.
6. pressure transducer integrated device according to claim 1, is characterized in that, the doping content of P-GaN base layer is less than or equal to 5 × 10
17cm
-3, thickness is 20nm ~ 500nm; Described N
+the doping content of-GaN cap is greater than or less than 1 × 10
18cm
-3, thickness is 10nm ~ 500nm.
7. pressure transducer integrated device according to claim 1, is characterized in that, the material of described N-type emitter layer is N-type N-Al
yga
1-yn, wherein y is 0 ~ 0.3, and the doping content of described N-type emitter layer is more than or equal to 1 × 10
17cm
-3, thickness is 10nm ~ 500nm.
8. pressure transducer integrated device according to claim 1, is characterized in that, described dielectric layer material is SiO
2or SiN
x.
9. pressure transducer integrated device according to claim 1, is characterized in that, the shape of described TaN transmission line is snakelike.
10. a method for making for the pressure transducer integrated device according to any one of right 1-9, is characterized in that, comprises following content:
Substrate from bottom to top forms AlN nucleating layer, GaN transition layer, N-GaN collector layer, P-GaN base layer, N-type emitter layer and N successively
+-GaN cap, to obtain HBT epitaxial wafer;
Metallization medium layer on described HBT epitaxial wafer, and on described dielectric layer, etch GaNHBT region, to expose described N
+-GaN cap;
Described dielectric layer deposits TaN transmission line;
In described GaNHBT region to described N
+-GaN cap, described N-type emitter layer and described P-GaN base layer etch, and expose the part surface of described N-GaN collector layer with P-GaN base layer described in the exposed portion, both sides at described N-type emitter layer in the both sides of described P-GaN base layer;
At described N
+-GaN cap deposits emitter, the P-GaN base layer of the both sides of described N-type emitter layer deposits base stage, at the N-GaN collector layer surface deposition collector of the both sides of described P-GaN base layer.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109269687A (en) * | 2018-09-26 | 2019-01-25 | 中国电子科技集团公司第十三研究所 | GaN minute-pressure pressure sensor and preparation method thereof |
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