CN105568258A - High barrier film prepared by adopting plasma jet and external force field, preparation method thereof and film coating device - Google Patents
High barrier film prepared by adopting plasma jet and external force field, preparation method thereof and film coating device Download PDFInfo
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- CN105568258A CN105568258A CN201510943909.5A CN201510943909A CN105568258A CN 105568258 A CN105568258 A CN 105568258A CN 201510943909 A CN201510943909 A CN 201510943909A CN 105568258 A CN105568258 A CN 105568258A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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Abstract
The invention discloses a high barrier film prepared by adopting plasma jet and an external force field, a preparation method thereof and a film coating device. By virtue of a static magnetic field generator or/and an electrostatic field generator, and a plasma generator of an improved jet flow gun, which are additionally arranged, and adjustment on a corresponding method, a nano film which is high in compactness and good in barrier gas molecular property is prepared. The high barrier film, the preparation method thereof and the film coating device have the advantages that while the defects of high cost and low efficiency of the preparation of a film barrier layer by adopting a plasma technology under a vacuum condition at present are overcome, the compactness of a coated film is improved; and the high barrier film has the characteristics of good barrier gas molecular property, high production efficiency, low material cost, no pollution and the like.
Description
Technical field
The invention belongs to barrier film manufacture technology field, particularly relate to high-isolation film using plasma jet and the additional field of force prepared and preparation method thereof and film coating apparatus.
Background technology
Barrier film at present for barrier package field is mainly prepared from by Compound Machining, multi-layer co-extruded, surface coated, the method such as vacuum aluminum-coated, but there is complex process in these preparation methods, cost is higher, and in the recycling and environmental protection etc. of material existing defects.
The silicon oxide that last century, late nineteen eighties occurred intercepts rete, has both had the wet oxygen barrier performance of gas barrier resistance, also has acid and alkali-resistance, corrosion-resistant, scratch and insulativity high, is widely used in barrier film field.Silicon oxide film preparation at present for high-barrier field mainly comprises radio frequency, intermediate frequency, magnetic field auxiliary type plasma chemical vapor deposition technique based on vacuum vapor plating or plasma chemistry enhancing chemical vapour deposition technique, above-mentioned silicon oxide technology of preparing is implemented all under vacuum, needs the vacuum apparatus that price is high; In addition, this vacuum apparatus overwhelming majority is the production operation mode of batch discontinuous, after film twists in and is disposed in vacuum chamber, needs change of lap again, relate to bleed, the operation such as venting, can production efficiency be reduced.
Application number is the patent of 2014101400355, disclose a kind of method preparing high-isolation film, but also there is this plated film undertighten in this patent and plated film area is less, even not, need the position repeatedly adjusting jet gun, production efficiency be lower, material cost is higher, expand the defect of the scope of plated film etc.
Summary of the invention
The object of the invention is to, thering is provided a kind of solves while using plasma technology under existing vacuum condition prepares high, the inefficient deficiency of thin-film barrier layers cost, improve the compactness of plated film, there is high-isolation film using plasma jet that intercepts the features such as gas molecule performance is good, production efficiency is high, the cost of material is low, pollution-free and the additional field of force prepared and preparation method thereof and film coating apparatus.
The object of the present invention is achieved like this: be deposited on after the plasma body produced by plasma producing apparatus is mixed with discharge gas on base material, plasma producing apparatus is normal pressure jetting type plasma producing apparatus, discharge gas is introduced by air delivering pipeline, organosilane monomer is carried by carrier gas and enters in jet gun simultaneously, mix with discharge gas, discharge between alternation high voltage electrode and ground connection jet head and produce plasma body, form nano-level thin-membrane gas phase composition, jet gun is driven by alternation high-voltage power supply, and plasma body is waited to spray through jet gun jet head;
Wherein, normal pressure jetting type plasma producing apparatus comprises jet gun, be arranged on the Stage microscope below jet gun, drive the front and back transmission rail of base material movement and support complete assembly base, with jet gun import by the organosilane monomer producer of pipeline connection and discharge gas source of supply, the carrier gas source of supply that is communicated with organosilane monomer producer, working power and jet gun Electricity Federation
In jet gun exit, be provided with magnetostatic field generator between jet gun and base material or/and the front and back between jet gun and base material are provided with electrostatic field generating unit, make between jet gun and base material, in the interval that plasma body passes through, be distributed with static magnetic field or/and electrostatic field, the direction of motion three of the direction of described static magnetic field, plasma jet direction and base material is mutually vertical, and described electrostatic field direction is identical with the direction of motion of base material or contrary; Plasma body, after jet gun ejection, is subject to static magnetic field or/and the function influence of electrostatic field, is separated in plasma body, the composition of different in kind, react, finally at deposited on substrates formation barrier film with the oxidizing gas in air.
Further, described jet gun comprises tubular and exit presents the shell of flats and the high voltage electrode of mounting casing inner chamber similar with shell Internal periphery, is clipped in insulating medium layer between high voltage electrode and cylindrical outer casing, is arranged on the dielectric cylinder of high voltage electrode tail end, is arranged on the jet head that shell tail end connects with ground wire, pipeline connection organosilane monomer producer is passed through in jet gun import, the high voltage electrode Electricity Federation of working power and jet gun, and the jet head of jet gun is connected with the earth by wire, high voltage electrode and shell form tubular cavity, the head end of tubular cavity is provided with insulating cover, insulating cover center is provided with air outlet, air outlet is communicated with by the inlet pipe that insulate with organosilane monomer producer, insulation inlet pipe is connected with alternation high voltage electrode inner chamber, discharge gas arrives in hollow high-pressure electrode through insulation inlet pipe, plasma body and discharge gas are sprayed from being exported by dielectric cylinder strip, wherein dielectric cylinder strip outlet inner side-wall is fitted with the flats sleeve be connected with high voltage electrode, jet tail end extends downward dielectric cylinder tail end strip outlet below, make to form alternating electric field between jet tail end and high voltage electrode tail end,
Further, be respectively equipped with N/S replace magnetic stripe A and N/S and replace magnetic stripe B in jet head interior sidewall surface, N/S replaces magnetic stripe A and N/S and replaces magnetic stripe B and be positioned at below dielectric cylinder, and N/S replaces magnetic stripe A and N/S, and to replace the magnetic field, position that magnetic stripe B Arbitrary Relative answers contrary; Make plasma body before jet gun ejection, the region between magnetic stripe A and magnetic stripe B, increases the Particles Moving time, improves plasma and homogenizing further.
Described high-isolation film is be the polymerizable organosilicon film of skeleton by siloxane bond, and barrier film thickness is 1-800nm, and general control is at 30-45nm; The transmitance of oxygen is less than 2ml/m
2/ 24h, is generally 0.3-0.4ml/m
2/ 24h; The transmitance of water vapour is less than 5g/m
2/ 24h, is generally 2-4g/m
2/ 24h.
It is normal pressure jetting type plasma producing apparatus that equipment that the present invention adopts comprises plasma producing apparatus plasma producing apparatus, normal pressure jetting type plasma producing apparatus comprises jet gun 4, be arranged on the Stage microscope 5 below jet gun, drive the front and back transmission rail 6 of base material movement and support complete assembly base 7, with jet gun import by the organosilane monomer producer 8 of pipeline connection and discharge gas source of supply 9, the carrier gas source of supply 10 that is communicated with organosilane monomer producer 8, working power 11 and jet gun 4 Electricity Federation
In jet gun exit, be provided with magnetostatic field generator between jet gun and base material or/and the front and back between jet gun and base material are provided with electrostatic field generating unit, make between jet gun and base material, in the interval that plasma body passes through, be distributed with static magnetic field or/and electrostatic field, the direction of motion three of the direction of described static magnetic field, plasma jet direction and base material is mutually vertical, and described electrostatic field direction is identical with the direction of motion of base material or contrary.
Principle of work of the present invention:
Discharge gas passes in jet gun through mass flow controller, in jet gun with simultaneously carry by carrier gas the organosilane monomer entered and mix.When the voltage of jet gun inner high voltage electrode and ground connection jet head is enough high, mixed gas is by breakdown formation plasma body and be blown jet gun.Coating material lies on Stage microscope.
When operating normal pressure jetting type plasma producing apparatus plated film, the base material on Stage microscope transmission rail pull lower can perpendicular to translational motion in the plane of jet gun, jet gun can persistence be sprayed.In film deposition process, first regulate the spacing of jet gun and Stage microscope, open electrostatic field or/static magnetic field afterwards, due to the various particle in the plasma body that plasma producing apparatus is finally launched and group, be called as the active particle in plasma body, at static magnetic field or/and under the effect of electrostatic field, the composition separated such as positive ion and negative ion of different in kind move respectively to the positive and negative direction of the direction of motion of base material, thus be successively attached on base material, and then improve the compactness of base material plated film.
The inventive method compared to other barrier film manufacture crafts,
1, in jet gun exit, be provided with magnetostatic field generator between jet gun and base material or/front and back between jet gun and base material are provided with electrostatic field generating unit, plasma body is after jet gun ejection, be subject to static magnetic field or/and the function influence of electrostatic field, be separated in plasma body, the composition of different in kind, react with the oxidizing gas in air, finally form barrier film at deposited on substrates.Extra electric field or magnetic field make plated film evenly, improve coating quality.
2, owing to adding magnetic field or electric field, jet gun outlet is in long flats, add the compactness of plated film, also achieve production cost low simultaneously, preparation speed is fast, easy and simple to handle, without the need to vacuum apparatus, be achievable advantage under atmospheric conditions, remain traditional coating process material and be convenient to recycle, safety and environmental protection, can be widely used in the advantage of the preparation of the high-obstructions such as food service industry, pharmaceutical industries, vacuum heat-insulating plate.
3, set up N/S to replace magnetic stripe A1 and N/S and replace magnetic stripe B2, make plasma body before jet gun ejection, the region between magnetic stripe A1 and magnetic stripe B2, increases the Particles Moving time, further raising plasma and homogenizing, make plated film evenly and saving discharge gas is cost-saving.
Accompanying drawing explanation
Fig. 1: for normal pressure jetting type plasma producing apparatus increases the structural representation of static magnetic field state;
Fig. 2: be the left view of Fig. 1;
Fig. 3: for normal pressure jetting type plasma producing apparatus increases the structural representation of electrostatic field state;
Fig. 4: be the left view of Fig. 3;
Fig. 5: be jet gun structural representation;
Fig. 6: be the enlarged view at I place in Fig. 5;
Fig. 7: for N/S replaces the structural representation that magnetic stripe A and N/S replaces magnetic stripe B:
Fig. 8: be the structural representation after base material plated film;
Label declaration: 1, magnetic stripe A, 2, magnetic stripe B, 3, base material, 4, jet head, 5, Stage microscope, 6, front and back transmission rail, 7, base, 8, organosilane monomer producer, 9, discharge gas source of supply, 10, carrier gas source of supply, 11, working power, 12, insulation inlet pipe, 13, mass flow controller, 4-1, cylindrical outer casing, 4-2, high voltage electrode, 4-3, insulating medium layer, 4-4, dielectric cylinder, 4-5, jet head, 4-6, flats sleeve.
Embodiment
As shown in figs. 1 to 6: be deposited on base material 3 after the plasma body produced by plasma producing apparatus is mixed with discharge gas, plasma producing apparatus is normal pressure jetting type plasma producing apparatus, discharge gas is introduced by air delivering pipeline, organosilane monomer is carried by carrier gas and enters in jet gun simultaneously, mix with discharge gas, discharge between alternation high voltage electrode and ground connection jet head and produce plasma body, form nano-level thin-membrane gas phase composition, jet gun is driven by alternation high-voltage power supply, and plasma body is waited to spray through jet gun jet head;
Wherein, normal pressure jetting type plasma producing apparatus comprises jet gun 4, be arranged on the Stage microscope 5 below jet gun, drive the front and back transmission rail 6 of base material movement and support complete assembly base 7, with jet gun import by the organosilane monomer producer 8 of pipeline connection with discharge gas source of supply 9, be communicated with quiet carrier gas source of supply 10 with organosilane monomer producer 8, working power 11 and jet gun 4 Electricity Federation, in general Stage microscope 5 here and transmission rail all can regulate height.
In jet gun exit, be provided with magnetostatic field generator between jet gun and base material or/and the front and back between jet gun and base material are provided with electrostatic field generating unit, make between jet gun and base material, in the interval that plasma body passes through, be distributed with static magnetic field or/and electrostatic field, the direction of motion of the direction of described static magnetic field, plasma jet direction and base material is mutually vertical, and described electrostatic field direction is identical with the direction of motion of base material or contrary; Plasma body, after jet gun ejection, is subject to static magnetic field or/and the function influence of electrostatic field, is separated in plasma body, the composition of different in kind, react, finally at deposited on substrates formation barrier film with the oxidizing gas in air.Additional static magnetic field or/and electrostatic field make plated film evenly, improve coating quality.
Described jet gun 4 comprises tubular and exit presents the shell 4-1 of flats and the high voltage electrode 4-2 of mounting casing inner chamber similar with shell Internal periphery, is clipped in insulating medium layer 4-3 between high voltage electrode 4-2 and cylindrical outer casing 4-1, is arranged on the dielectric cylinder 4-4 of high voltage electrode 4-2 tail end, is arranged on the jet head 4-5 that shell 4-1 tail end connects with ground wire, pipeline connection organosilane monomer producer 8 is passed through in jet gun import, the high voltage electrode 4-2 Electricity Federation of working power 11 and jet gun, and the jet head 4-5 of jet gun is connected with the earth by wire, high voltage electrode 4-2 and shell 4-1 forms tubular cavity, the head end of tubular cavity is provided with insulating cover, insulating cover center is provided with air outlet, air outlet is communicated with by the inlet pipe 12 that insulate with organosilane monomer producer 8, insulation inlet pipe 12 is connected with alternation high voltage electrode 4-2 inner chamber, discharge gas arrives in hollow high-pressure electrode 4-2 through insulation inlet pipe, plasma body and discharge gas are sprayed from being exported by dielectric cylinder strip, wherein dielectric cylinder strip outlet inner side-wall is fitted with the flats sleeve 4-6 be connected with high voltage electrode 4-2, jet head 4-5 tail end extends downward dielectric cylinder 4-4 tail end strip outlet below, make to form alternating electric field between jet head 4-5 tail end and high voltage electrode 4-2 tail end,
As shown in Figure 7: be respectively equipped with N/S in the jet head 4-5 interior sidewall surface of jet gun and replace magnetic stripe A1 and N/S and replace magnetic stripe B2, N/S replaces magnetic stripe A and N/S and replaces magnetic stripe B and be positioned at below dielectric cylinder 4-4, and N/S replaces magnetic stripe A1 and N/S, and to replace the magnetic field, position that magnetic stripe B2 Arbitrary Relative answers contrary; Make plasma body before jet gun ejection, the region between magnetic stripe A1 and magnetic stripe B2, increases the Particles Moving time, further improves plasma and homogenizing, makes plated film evenly and to save discharge gas cost-saving.
Jet gun exit is provided with the adjustable plate regulating outlet size.According to the width of base material or the size needing the width adjustment of plated film to export, to adapt to base material and the needs of respective width, can enhance productivity and also can avoid waste like this.
Described jet head 4-5 preferentially selects copper or stainless material to make.Improve the effect of conduction.
Described discharge gas is the mixed gas of a kind of in nitrogen, argon gas, helium or any two or three.
Described organosilane monomer is the one in hexamethyldisiloxane, octamethylcyclotetrasiloxane or tetramethyl disiloxane, is liquid state.
As shown in Figure 8: described high-isolation film is be the polymerizable organosilicon film of skeleton by siloxane bond, and barrier film thickness is 1-800nm, and general control is at 30-45nm; The transmitance of oxygen is less than 2ml/m
2/ 24h, is generally 0.3-0.4ml/m
2/ 24h; The transmitance of water vapour is less than 5g/m
2/ 24h, is generally 2-4g/m
2/ 24h.
Equipment of the present invention is carry out based on prior art the structure improved, it comprises plasma producing apparatus plasma producing apparatus is normal pressure jetting type plasma producing apparatus, normal pressure jetting type plasma producing apparatus comprises jet gun 4, be arranged on the Stage microscope 5 below jet gun, drive the front and back transmission rail 6 of base material movement and support the base 7 of complete assembly, organosilane monomer producer 8 and the discharge gas source of supply 9 of pipeline connection is passed through with jet gun import, the carrier gas source of supply 10 be communicated with organosilane monomer producer 8, working power 11 and jet gun 4 Electricity Federation,
In jet gun exit, be provided with magnetostatic field generator between jet gun and base material or/and the front and back between jet gun and base material are provided with electrostatic field generating unit, make between jet gun and base material, in the interval that plasma body passes through, be distributed with static magnetic field or/and electrostatic field, the direction of motion three of the direction of described static magnetic field, plasma jet direction and base material is mutually vertical, and described electrostatic field direction is identical with the direction of motion of base material or contrary.
Further, described jet gun 4 comprises tubular and exit presents the shell 4-1 of flats and the high voltage electrode 4-2 of mounting casing inner chamber similar with shell Internal periphery, is clipped in insulating medium layer 4-3 between high voltage electrode 4-2 and cylindrical outer casing 4-1, is arranged on the dielectric cylinder 4-4 of high voltage electrode 4-2 tail end, is arranged on the jet head 4-5 that shell 4-1 tail end connects with ground wire, pipeline connection organosilane monomer producer 8 is passed through in jet gun import, the high voltage electrode 4-2 Electricity Federation of working power 11 and jet gun, and the jet head 4-5 of jet gun is connected with the earth by wire, high voltage electrode 4-2 and shell 4-1 forms tubular cavity, the head end of tubular cavity is provided with insulating cover, insulating cover center is provided with air outlet, air outlet is communicated with by the inlet pipe 12 that insulate with organosilane monomer producer 8, insulation inlet pipe 12 is connected with alternation high voltage electrode 4-2 inner chamber, discharge gas arrives in hollow high-pressure electrode 4-2 through insulation inlet pipe, plasma body and discharge gas are sprayed from being exported by dielectric cylinder strip, wherein dielectric cylinder strip outlet inner side-wall is fitted with the flats sleeve 4-6 be connected with high voltage electrode 4-2, jet head 4-5 tail end extends downward dielectric cylinder 4-4 tail end strip outlet below, make to form alternating electric field between jet head 4-5 tail end and high voltage electrode 4-2 tail end,
Further, be respectively equipped with N/S in the jet head 4-5 interior sidewall surface of jet gun to replace magnetic stripe A1 and N/S and replace magnetic stripe B2, N/S replaces magnetic stripe A and N/S and replaces magnetic stripe B and be positioned at below dielectric cylinder 4-4, and N/S replaces magnetic stripe A1 and N/S, and to replace the magnetic field, position that magnetic stripe B2 Arbitrary Relative answers contrary.
Jet gun exit is provided with the adjustable plate regulating outlet size.
Described jet head 4-5 preferentially selects copper or stainless material to make.
Static magnetic field in the present invention is or/and the principle of electrostatic field effect is:
Under action of alternative electric field, in molecule covalent linkage division result, make share electron pair become a side monopolize, then form ion; If the result of division makes share electron pair belong to two atoms or group, then form free radical, free radical is group or the atom with uncoupled electron.
Under action of alternative electric field, the plasma body of generation is the aggregate be made up of positive ion, negative ion, excited atom or molecule, ground state atom or the particle such as molecule and free radical and group.Particle in plasma body and group, be called as the active particle in plasma body, under suitable condition, each other or with other material generation chemical reactions of surrounding, form the new structure of matter, change the physicochemical property of original material.
Positive ion positively charged, negative ion is electronegative, and free-radical chemistry reactive behavior is high, not charged, have moment of dipole and magnetic moment, and excited atom or molecule be not charged, have moment of dipole and magnetic moment, and ground state atom or molecule be not charged, have magnetic moment.
Perpendicular to plasma jet and under the extra electric field E effect parallel with substrate transport direction, carried charge is that the stressed positive and negative qE of positive and negative ion that positive and negative q quality is different has along the different directions of the positive and negative electric field E acceleration different with the numerical value because quality is different and speed; Moment of dipole P is the mobile and rotation by moment L=P × E in electric field E, makes energy be tending towards minimum state, the acceleration that numerical value is different because quality is different and speed.These particles and group scatter under above-mentioned electric field E effect on base material, form multi-level film, this film more not extra electric field E time fine and close, thinner, edge is even, as shown in schematic diagram 8.
Perpendicular to plasma jet and under the externally-applied magnetic field B effect vertical with substrate transport direction, carried charge is that the different directions that the stressed positive and negative qv × B of positive and negative ion that positive and negative q quality is different does perpendicular to magnetic field B does the different circumferential motion of radius with because of quality difference (establish speed v numerical value identical); Magnetic moment m is the mobile and rotation by moment L=m × B in the B of magnetic field, makes energy be tending towards minimum state, the acceleration that numerical value is different because quality is different and speed.These particles and group scatter under the B effect of above-mentioned magnetic field on base material, form multi-level film, this film more not externally-applied magnetic field B time fine and close, thinner, edge is even, as shown in schematic diagram 8.
Claims (10)
1. the method for high-isolation film is prepared in a using plasma jet and the additional field of force, be deposited on base material (3) after the plasma body produced by plasma producing apparatus is mixed with discharge gas, plasma producing apparatus is normal pressure jetting type plasma producing apparatus, discharge gas is introduced by air delivering pipeline, organosilane monomer is carried by carrier gas and enters in jet gun simultaneously, mix with discharge gas, discharge between alternation high voltage electrode and ground connection jet head and produce plasma body, form nano-level thin-membrane gas phase composition, jet gun is driven by alternation high-voltage power supply, plasma body is waited to spray through jet gun jet head,
Wherein, normal pressure jetting type plasma producing apparatus comprises jet gun (4), the base (7) being arranged on the Stage microscope (5) below jet gun, driving the front and back transmission rail (6) of base material movement and supporting complete assembly, the organosilane monomer producer (8) and the discharge gas source of supply (9) that pass through pipeline connection with jet gun import, the carrier gas source of supply (10) that is communicated with organosilane monomer producer (8), working power (11) and jet gun (4) Electricity Federation
It is characterized in that: in jet gun exit, be provided with magnetostatic field generator between jet gun and base material or/and the front and back between jet gun and base material are provided with electrostatic field generating unit, make between jet gun and base material, in the interval that plasma body passes through, be distributed with static magnetic field or/and electrostatic field, the direction of motion three of the direction of described static magnetic field, plasma jet direction and base material is mutually vertical, and described electrostatic field direction is identical with the direction of motion of base material or contrary; Plasma body, after jet gun ejection, is subject to static magnetic field or/and the function influence of electrostatic field, is separated the composition that plasma neutral matter is different, reacts with the oxidizing gas in air, finally forms barrier film at deposited on substrates.
2. the method for high-isolation film is prepared in using plasma jet according to claim 1 and the additional field of force, it is characterized in that: described jet gun (4) comprises tubular and exit presents the shell (4-1) of flats, similar and the high voltage electrode of mounting casing inner chamber (4-2) with shell Internal periphery, be clipped in the insulating medium layer (4-3) between high voltage electrode (4-2) and cylindrical outer casing (4-1), be arranged on the dielectric cylinder (4-4) of high voltage electrode (4-2) tail end, be arranged on the jet head (4-5) that shell (4-1) tail end connects with ground wire, pipeline connection organosilane monomer producer (8) is passed through in jet gun import, high voltage electrode (4-2) Electricity Federation of working power (11) and jet gun, and the jet head (4-5) of jet gun is connected with the earth by wire, high voltage electrode (4-2) and shell (4-1) form tubular cavity, the head end of tubular cavity is provided with insulating cover, insulating cover center is provided with air outlet, air outlet is communicated with by the inlet pipe (12) that insulate with organosilane monomer producer (8), insulation inlet pipe (12) is connected with alternation high voltage electrode (4-2) inner chamber, discharge gas arrives in hollow high-pressure electrode (4-2) through insulation inlet pipe, plasma body and discharge gas are sprayed from being exported by dielectric cylinder strip, wherein dielectric cylinder strip outlet inner side-wall is fitted with the flats sleeve (4-6) be connected with high voltage electrode (4-2), jet head (4-5) tail end extends downward dielectric cylinder (4-4) tail end strip outlet below, make to form alternating electric field between jet head (4-5) tail end and high voltage electrode (4-2) tail end.
3. the method for high-isolation film is prepared in using plasma jet according to claim 1 and 2 and the additional field of force, it is characterized in that: be respectively equipped with N/S in jet head (4-5) interior sidewall surface of jet gun and replace magnetic stripe A (1) and N/S and replace magnetic stripe B (2), N/S replaces magnetic stripe A and N/S and replaces magnetic stripe B and be positioned at dielectric cylinder (4-4) below, and N/S replaces magnetic stripe A (1) and N/S, and to replace the magnetic field, position that magnetic stripe B (2) Arbitrary Relative answers contrary; Make plasma body before jet gun ejection, the region between magnetic stripe A (1) and magnetic stripe B (2), increases the Particles Moving time, improves plasma and homogenizing further.
4. prepare the method for high-isolation film according to using plasma jet according to claim 1 and the additional field of force, it is characterized in that: described jet head (4-5) selects copper or stainless material to make.
5. prepare the method for high-isolation film according to using plasma jet according to claim 1 and the additional field of force, it is characterized in that: described discharge gas is the mixed gas of a kind of in nitrogen, argon gas, helium or any two or three.
6. the method for high-isolation film is prepared according to using plasma jet according to claim 1 and the additional field of force, it is characterized in that: described organosilane monomer is the one in hexamethyldisiloxane, octamethylcyclotetrasiloxane or tetramethyl disiloxane, is liquid state.
7. high-isolation film prepared by the method according to claim 1-6 any one, described high-isolation film is be the polymerizable organosilicon film of skeleton by siloxane bond, and barrier film thickness is 1-800nm, and general control is at 30-45nm; The transmitance of oxygen is less than 2ml/m
2/ 24h, is generally 0.3-0.4ml/m
2/ 24h; The transmitance of water vapour is less than 5g/m
2/ 24h, is generally 2-4g/m
2/ 24h.
8. the film coating apparatus that the method according to claim 1-6 any one adopts, it is characterized in that, it comprises plasma producing apparatus, plasma producing apparatus is normal pressure jetting type plasma producing apparatus, normal pressure jetting type plasma producing apparatus comprises jet gun (4), be arranged on the Stage microscope (5) below jet gun, drive the front and back transmission rail (6) of base material movement and support the base (7) of complete assembly, organosilane monomer producer (8) and the discharge gas source of supply (9) of pipeline connection is passed through with jet gun import, the carrier gas source of supply (10) be communicated with organosilane monomer producer (8), working power (11) and jet gun (4) Electricity Federation,
It is characterized in that: in jet gun exit, be provided with magnetostatic field generator between jet gun and base material or/and the front and back between jet gun and base material are provided with electrostatic field generating unit, make between jet gun and base material, in the interval that plasma body passes through, be distributed with static magnetic field or/and electrostatic field, the direction of motion three of the direction of described static magnetic field, plasma jet direction and base material is mutually vertical, and described electrostatic field direction is identical with the direction of motion of base material or contrary.
9. film coating apparatus according to claim 8, is characterized in that: described jet gun (4) comprises tubular and exit presents the shell (4-1) of flats, and the high voltage electrode of mounting casing inner chamber (4-2) similar with shell Internal periphery, is clipped in insulating medium layer (4-3) between high voltage electrode (4-2) and cylindrical outer casing (4-1), is arranged on the dielectric cylinder (4-4) of high voltage electrode (4-2) tail end, is arranged on the jet head (4-5) that shell (4-1) tail end connects with ground wire, pipeline connection organosilane monomer producer (8) is passed through in jet gun import, high voltage electrode (4-2) Electricity Federation of working power (11) and jet gun, and the jet head (4-5) of jet gun is connected with the earth by wire, high voltage electrode (4-2) and shell (4-1) form tubular cavity, the head end of tubular cavity is provided with insulating cover, insulating cover center is provided with air outlet, air outlet is communicated with by the inlet pipe (12) that insulate with organosilane monomer producer (8), insulation inlet pipe (12) is connected with alternation high voltage electrode (4-2) inner chamber, discharge gas arrives in hollow high-pressure electrode (4-2) through insulation inlet pipe, plasma body and discharge gas are sprayed from being exported by dielectric cylinder strip, wherein dielectric cylinder strip outlet inner side-wall is fitted with the flats sleeve (4-6) be connected with high voltage electrode (4-2), jet head (4-5) tail end extends downward dielectric cylinder (4-4) tail end strip outlet below, make to form alternating electric field between jet head (4-5) tail end and high voltage electrode (4-2) tail end.
10. film coating apparatus according to claim 8, it is characterized in that: be respectively equipped with N/S in jet head (4-5) interior sidewall surface and replace magnetic stripe A (1) and N/S and replace magnetic stripe B (2), N/S replaces magnetic stripe A and N/S and replaces magnetic stripe B and be positioned at dielectric cylinder (4-4) below, and N/S replaces magnetic stripe A (1) and N/S, and to replace the magnetic field, position that magnetic stripe B (2) Arbitrary Relative answers contrary.
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| CN112853738A (en) * | 2021-01-05 | 2021-05-28 | 西南交通大学 | Plasma modification device based on electromagnetic field regulation and control |
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