CN105552222B - Cross rod structured memristor based on amorphous-state lanthanum manganate thin film and preparation method of cross rod structured memristor - Google Patents
Cross rod structured memristor based on amorphous-state lanthanum manganate thin film and preparation method of cross rod structured memristor Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 39
- HBAGRTDVSXKKDO-UHFFFAOYSA-N dioxido(dioxo)manganese lanthanum(3+) Chemical compound [La+3].[La+3].[O-][Mn]([O-])(=O)=O.[O-][Mn]([O-])(=O)=O.[O-][Mn]([O-])(=O)=O HBAGRTDVSXKKDO-UHFFFAOYSA-N 0.000 title claims abstract description 10
- 239000010409 thin film Substances 0.000 title claims abstract description 7
- 238000000034 method Methods 0.000 claims abstract description 50
- 230000008569 process Effects 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 21
- 239000002346 layers by function Substances 0.000 claims abstract description 16
- 239000010408 film Substances 0.000 claims description 62
- 229910052751 metal Inorganic materials 0.000 claims description 43
- 239000002184 metal Substances 0.000 claims description 43
- 239000002253 acid Substances 0.000 claims description 39
- 229910052746 lanthanum Inorganic materials 0.000 claims description 39
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 39
- 238000004544 sputter deposition Methods 0.000 claims description 39
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 30
- 239000007789 gas Substances 0.000 claims description 25
- 229910052786 argon Inorganic materials 0.000 claims description 15
- 238000005477 sputtering target Methods 0.000 claims description 15
- 239000013077 target material Substances 0.000 claims description 15
- 239000010410 layer Substances 0.000 claims description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 239000000919 ceramic Substances 0.000 claims description 5
- -1 hearth electrode Substances 0.000 claims description 5
- 230000005611 electricity Effects 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 238000006386 neutralization reaction Methods 0.000 claims 1
- 238000003860 storage Methods 0.000 abstract description 7
- 230000008859 change Effects 0.000 abstract description 4
- 230000008901 benefit Effects 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 229910001220 stainless steel Inorganic materials 0.000 description 10
- 239000010935 stainless steel Substances 0.000 description 10
- 239000002131 composite material Substances 0.000 description 7
- 238000010276 construction Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229910052681 coesite Inorganic materials 0.000 description 5
- 229910052906 cristobalite Inorganic materials 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 229910052682 stishovite Inorganic materials 0.000 description 5
- 229910052905 tridymite Inorganic materials 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000004049 embossing Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000007812 deficiency Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000001127 nanoimprint lithography Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
The invention discloses a preparation method of a cross rod structured memristor based on an amorphous-state lanthanum manganate thin film. The preparation method comprises the following steps of (1) preparing a bottom electrode on a substrate by a DC magnetron sputtering method; (2) preparing the amorphous-state lanthanum manganate thin film on the bottom electrode by a radio-frequency magnetron sputtering method; and (3) preparing a top electrode, perpendicular to the bottom electrode, on the amorphous-state lanthanum manganate thin film by the DC magnetron sputtering method, thereby obtaining the cross rod structured memristor. The cross rod structured memristor disclosed by the invention is of a layered structure sequentially formed by the substrate, the bottom electrode, a functional layer and the top electrode, the bottom electrode comprises a plurality of bottom electrode strips parallel to one another, the top electrode comprises a plurality of top electrode strips parallel to one another, the bottom electrode is perpendicular to the top electrode, and the functional layer is the amorphous-state lanthanum manganate thin film. The cross rod structured memristor disclosed by the invention has the advantages of large resistance change, low operation voltage and easiness in compatibility with other processes, a memristive unit is difficult to short-circuit, and the demands of high-performance storage and operation can be satisfied.
Description
Technical field
The invention belongs to microelectronics technology is and in particular to a kind of crossbar structure based on amorphous state mangaic acid lanthanum film
Memristor and preparation method thereof.
Background technology
Memristor is the 4th kind of component in addition to resistance, electric capacity, inductance, using its unique resistance memory work(
Can, memristor has important application in a lot of fields, especially has at aspects such as information Store, logical operation and neutral nets
Huge researching value and application potential.As a rule, the structure of memristor is metal/change resistance layer/metal Sanming City of plane
Control structure, but in practice, memristor can take specific version according to different application demands, such as the choosing of electrode
Select and the connected mode of shape size, electrode and resistive material layer, therefore prepare and there is the memristor of different structure form have
Higher using value.
Crossbar structure is a kind of two-dimensional array being mutually perpendicular to by two-layer parallel pole and intersecting, each intersection
Upper/lower electrode between accompany the material of specific function, can be used as effectively storage or a logical block.This kind of structure assembly
Spend height, there is good fault-tolerance and concurrency, flexibly can realize difference in functionality from intermediate layer material.Chen Yong etc.
The document of people, Nanoscale molecular-switch devices fabricated by imprint
Lithography, is prepared for the crossbar structure resistance-variable storing device based on organic rotaxane molecule using nanometer embossing, afterwards
They are at 1 μm2Area on prepared 8 × 8 crossbar structure, storage density be 6.4Gbits/cm2.Jung G.Y. etc.
The document of people, Fabrication of a 34 × 34crossbar structure at 50nm half-pitch by UV-
Based nanoimprint lithography, is equally prepared for 34 × 34 crossbar structure, deposits using nanometer embossing
Storage density reaches 10Gbits/cm2.
The nanometer crossbar structure based on rotaxane of above-mentioned preparation typically adopts nanometer embossing and beamwriter lithography skill
Art, but these technology need complicated equipment and technological process, there is the deficiencies such as high cost, process time length, even meeting sometimes
Material is caused damage and affect the performance of memristor.And because above-mentioned crossbar structure memristor has selected organic molecule wheel
Alkane, as functional layer, leads to the stability of crossbar structure memristor of preparation and durability poor, is difficult to reality.Mangaic acid
, as a kind of perovskite composite oxide, the strong pass that the free degree such as genus electric charge, track, lattice, spin intercouples is conjuncted for lanthanum
System, there is the interaction of Various Complex in inside, be the functional material that a class has specific physical properties and chemical property, can gram
Take the shortcoming that organic molecule exists as memristor functional layer.But on memristor, the mangaic acid lanthanum film of application is mainly crystalline substance in the past
State, the preparation temperature of this crystalline state mangaic acid lanthanum film is high, or even also needs to annealing under high temperature oxygen atmosphere, and this is unfavorable for and it
Its process compatible and practical application.And, resistance change is had based on the crossbar structure memristor of crystalline state mangaic acid lanthanum film
The problems such as little, operating voltage is high, the easily short circuit of memristor unit are it is difficult to meet the demand of high-performance storage and computing.
Content of the invention
The technical problem to be solved in the present invention is to overcome the deficiencies in the prior art, provides that a kind of operating voltage is low, resistive
Memristor of crossbar structure based on amorphous state mangaic acid lanthanum film that can be good and preparation method thereof.
For solving above-mentioned technical problem, technical scheme proposed by the present invention is：
A kind of preparation method of the crossbar structure memristor based on amorphous state mangaic acid lanthanum film, comprises the following steps：
(1) hearth electrode is prepared on substrate using direct current magnetron sputtering process；
(2) amorphous state mangaic acid lanthanum film is prepared on described hearth electrode using radio-frequency magnetron sputter method；
(3) prepared on described amorphous state mangaic acid lanthanum film using direct current magnetron sputtering process orthogonal with hearth electrode
Top electrode, that is, obtain described crossbar structure memristor.
Above-mentioned preparation method is it is preferred that in described step (1) and step (3), hearth electrode and top electrode are all by first
Prepared by metal mask, the centre of described first metal mask has several parallel strip pierced patterns, described strip pattern
Live width is 50 μm～80 μm.
Above-mentioned preparation method is it is preferred that in described step (2), amorphous state mangaic acid lanthanum film passes through the second metal mask
Preparation, the centre of described second metal mask has a square pierced pattern, described square pierced pattern be smaller in size than institute
State the overall size of several parallel strip pierced patterns in the first metal mask.
Preferably, the first metal mask and the second metal mask are stainless steel, the surrounding tool of the first metal mask
Four cross or square pierced pattern is had to be used for preparing the perpendicular alignmnet ensureing top electrode and hearth electrode during top electrode, first
The centre of metal mask is provided with square pit and is used for placing substrate.
During above-mentioned preparation method, using magnetron sputtering method deposition film (hearth electrode, amorphous state mangaic acid lanthanum film and
Top electrode) when, with metal mask and cover plate, substrate is clipped in the middle, and spiral shell is carried out by the circular hole on metal mask and cover plate side
Silk is fixing.
Above-mentioned preparation method is it is preferred that in described step (2), the process conditions of rf magnetron sputtering are：With lanthanum manganate
Ceramic target is sputtering target material, and chamber pressure is less than 5 × 10-4Pa, sputter temperature scope is 20 DEG C～100 DEG C, and sputtering pressure is
0.8Pa～1.5Pa, sputtering power is 50W～100W, and in sputter gas, argon flow amount is 20sccm～40sccm, oxygen volume
The volume fraction accounting for sputter gas is 10%～30%.
Above-mentioned preparation method is it is preferred that in described step (1), the process conditions of direct current magnetron sputtering process are：With metal
Pt target is sputtering target material, and chamber pressure is less than 1 × 10-3Pa, sputter temperature is 20 DEG C, and sputtering pressure is 1.0Pa～2.0Pa, splashes
Penetrating power is 10W～20W, and sputter gas argon flow amount is 20sccm～40sccm.Using direct current magnetron sputtering process splash-proofing sputtering metal,
Sputter rate is quickly.The present invention is the shortcoming overcoming the easily short circuit of memristor unit, needs the bottom electrode layer of lower thickness, and quickly splashes
Penetrate and be not easy the thickness of relatively thin film is controlled.By the optimization to sputtering technology condition, be conducive to controlling sputter rate,
Thus being conducive to obtaining the bottom electrode layer of lower thickness.
Above-mentioned preparation method is it is preferred that in described step (3), the process conditions of direct current magnetron sputtering process are：With metal
Ag target is sputtering target material, and chamber pressure is less than 1 × 10-3Pa, sputter temperature is 20 DEG C, and sputtering pressure is 1.0Pa～2.0Pa, splashes
Penetrating power is 10W～20W, and sputter gas argon flow amount is 20sccm～40sccm.
Applicant passes through the multiple technique studying rf magnetron sputtering, selects suitable process conditions energy control functional layer non-
The thickness of crystalline state mangaic acid lanthanum film and the thickness of hearth electrode and top electrode, to functional layer thickness and hearth electrode and top electrode thickness
The regulation of degree, advantageously reduces the possibility of memristor unit short circuit.
The present invention also provides a kind of crossbar structure memristor being obtained by said method, for successively by substrate, hearth electrode,
Functional layer and the layer structure of top electrode composition, the hearth electrode bar that described hearth electrode is parallel to each other by several is constituted, described top electricity
The top electrode bar that pole is parallel to each other by several is constituted, and described hearth electrode and top electrode are mutually perpendicular to；Described functional layer is amorphous state
Mangaic acid lanthanum film.
Above-mentioned crossbar structure memristor is it is preferred that the thickness of described amorphous state mangaic acid lanthanum film is 40nm～60nm.
Applicant is found by numerous studies, when the thickness of amorphous state mangaic acid lanthanum film is less than 40nm, the covering to hearth electrode corner
Imperfect, easily cause short circuit；During higher than 60nm, it is unfavorable for the reduction of operating voltage.Therefore, select the non-of 40nm～60nm thickness
Crystalline state mangaic acid lanthanum film, both can ensure relatively low operating voltage, also can avoid top electrode and hearth electrode directly contact and short-circuit.
Above-mentioned crossbar structure memristor is it is preferred that described hearth electrode is the thick Pt film of 30nm～60nm, described top
Electrode is the thick Ag film of 50nm～100nm.Select hearth electrode and the top electrode of relatively small thickness, the covering energy of step can be improved
Power, reduces the possibility of Pt film and Ag film directly contact and short circuit.Preferably, described hearth electrode bar and described top electrode bar
Width is 50 μm～80 μm；Applicant passes through substantial amounts of research and finds, when the width of electrode strip is less than 50 μm, resistance is larger,
Also ratio is larger for partial pressure on electrode, so occurring resistive to need higher operating voltage, is unfavorable for the reduction of operating voltage；Electrode
When the width of bar is higher than 80 μm, memristor number of unit can reduce, and is unfavorable for meeting the requirement of high density storage；Therefore select 50 μm
～80 μm of wide electrode strips, both can meet high density and store and no mutual interference, also reduce the partial pressure on electrode, thus
Reduce operating voltage.
Compared with prior art, it is an advantage of the current invention that：
(1) the crossbar structure memristor resistance change based on amorphous state mangaic acid lanthanum film of present invention preparation is big, behaviour
Make that voltage is low, memristor unit is difficult short circuit, is easy to and other process compatibles, the demand of high-performance storage and computing can be met.
(2) the crossbar structure memristor based on amorphous state mangaic acid lanthanum film of the present invention, by hearth electrode, function
Layer, the regulation of top electrode thickness, reduce the possibility of memristor unit short circuit, operating voltage is low simultaneously.
(3) amorphous state mangaic acid lanthanum film of the present invention is preparation between 20 DEG C and 100 DEG C, and this low temperature preparation is conducive to
Reducing energy consumption, and be conducive to and other process compatible and practical application.
(4) crossbar structure of the present invention is using the preparation of metal mask method, and this method does not need the equipment of complexity, system
Standby technical process is simple, low cost, resistive material will not be caused damage.
Brief description
Fig. 1 prepares the first metal mask photo used by crossbar structure memristor for the embodiment of the present invention 1.
Fig. 2 prepares the second metal mask photo used by crossbar structure memristor for the embodiment of the present invention 1.
Fig. 3 prepares the cover plate photo used by crossbar structure memristor for the embodiment of the present invention 1.
Fig. 4 prepares the photo of crossbar structure memristor substrate/bottom electrode structural for the embodiment of the present invention 1.
Fig. 5 prepares crossbar structure memristor substrate/hearth electrode/amorphous state mangaic acid lanthanum film knot for the embodiment of the present invention 1
The photo of structure.
Fig. 6 is the photo of the crossbar structure memristor of the embodiment of the present invention 1 preparation.
Fig. 7 is the scanning electron microscope (SEM) photograph of the crossbar structure memristor of the embodiment of the present invention 1 preparation.
Fig. 8 is the current-voltage characteristics curve of the crossbar structure memristor of the embodiment of the present invention 1 preparation.
Fig. 9 is the current-voltage characteristics curve of the crossbar structure memristor of the embodiment of the present invention 2 preparation.
Figure 10 is the current-voltage characteristics curve of the crossbar structure memristor of the embodiment of the present invention 3 preparation.
Specific embodiment
For the ease of understanding the present invention, below in conjunction with Figure of description and preferred embodiment, the present invention is made more complete
Face, meticulously describe, but protection scope of the present invention is not limited to embodiment in detail below.
Unless otherwise defined, the implication that all technical terms used hereinafter are generally understood that with those skilled in the art
Identical.Technical term used herein is intended merely to describe the purpose of specific embodiment, is not intended to limit the present invention
Protection domain.
Except there being special instruction, the various reagents used in the present invention, raw material be can commodity commercially or
The product that person can be obtained by known method.
Embodiment 1：
A kind of preparation method of the crossbar structure memristor based on amorphous state mangaic acid lanthanum film of present invention, including following
Step：
(1) by stainless steel first metal mask as shown in Figure 1, (live width of the parallel strip pattern of middle hollow out is 50 μ
And cover plate as shown in Figure 3 is by SiO m)2(300nm)/Si (has the SiO that a layer thickness is 300nm on Si2) substrate is clipped in the middle simultaneously
By screw, the first metal mask and cover plate are fixed, are prepared using direct current magnetron sputtering process and be parallel to each other by 18
The hearth electrode that Pt film is formed, as shown in figure 4, every Pt film thickness be 30nm, width be 50 μm；Wherein magnetically controlled DC sputtering
Process conditions include：With Pt metal target as sputtering target material, chamber pressure is less than 1 × 10-3Pa, sputter temperature is 20 DEG C, sputtering
Pressure is 1.0Pa, and sputtering power is 10W, and sputter gas argon flow amount is 20sccm；
(2) stainless steel second metal mask as shown in Figure 2 and cover plate as shown in Figure 3 will be obtained in step (1)
The composite construction of substrate and hearth electrode is clipped in the middle and is screwed, and prepares square mangaic acid using radio-frequency magnetron sputter method
Lanthanum film, covers on hearth electrode prepared by step (1), as shown in Figure 5；The process conditions of wherein rf magnetron sputtering are：
With lanthanum manganate ceramic target as sputtering target material, chamber pressure is less than 5 × 10-4Pa, sputter temperature is 20 DEG C, and sputtering pressure is 0.8Pa,
Sputtering power is 50W, and in sputter gas, argon flow amount is 20sccm, and the volume fraction that oxygen accounts for sputter gas is 10%；
(3) stainless steel first metal mask as shown in Figure 1 and cover plate as shown in Figure 3 will be obtained in step (2)
The composite construction that substrate, hearth electrode and mangaic acid lanthanum film are formed is clipped in the middle and is screwed, using magnetically controlled DC sputtering
Method is prepared with hearth electrode is mutually perpendicular to, (every Ag film thickness is for top electrode that the Ag film that is parallel to each other by several is formed
50nm, width are 50 μm), arrive crossbar structure memristor after the demoulding, as shown in Figure 6；The technique of wherein magnetically controlled DC sputtering
Condition：With metal Ag target as sputtering target material, chamber pressure is less than 1 × 10-3Pa, sputter temperature is 20 DEG C, and sputtering pressure is
1.0Pa, sputtering power is 10W, and sputter gas argon flow amount is 20sccm.
The crossbar structure memristor of above-mentioned preparation method preparation, for successively by substrate, hearth electrode, functional layer and top electrode
The layer structure constituting, wherein, substrate is SiO2 (300nm)/Si, and the Pt electrode strip that hearth electrode is parallel to each other by several is constituted,
Every Pt electrode strip be thickness be 30nm, width be 50 μm of Pt film；The Ag top electrode bar that top electrode is parallel to each other by several
Constitute, every Ag top electrode bar be thickness be 50nm, width be 50 μm of Ag film, and top electrode and hearth electrode are mutually perpendicular to shape
Become crossbar structure, functional layer is the thick amorphous state mangaic acid lanthanum film of 40nm.
The scanning electron microscope (SEM) photograph of crossbar structure memristor manufactured in the present embodiment is as shown in Figure 7 it can be seen that crossed array
There is good regularity, hearth electrode and top electrode spacing so that chi structure is presented four crosspoints are one group 18 × 18 gusts
Array structure, has 324 crosspoints.
Study the resistance switch characteristic that the present embodiment prepares memristor using Semiconductor Parameter Analyzer, as shown in figure 8, device
The cut-in voltage that part switchs to low resistance state from high-impedance state is 0.35V；Device from low resistance state come back to high-impedance state closing voltage be-
0.32V；Small voltage using 50mV reads the resistance of high low resistance state, and high-impedance state is 14.6M Ω, and low resistance state is 3.2k Ω, resistance
On-off ratio is more than 103.
Embodiment 2：
A kind of preparation method of the crossbar structure memristor based on amorphous state mangaic acid lanthanum film of present invention, including following
Step：
(1) will by stainless steel first metal mask (live width of the parallel strip pattern of middle hollow out is 80 μm) and cover plate
SiO2 (300nm)/Si substrate is clipped in the middle and by screw, the first metal mask and cover plate is fixed, using direct magnetic control
Sputtering method prepares the hearth electrode that the Pt film being parallel to each other by several is formed, and every Pt film thickness is 60nm, width is 80 μ
m；The process conditions of wherein magnetically controlled DC sputtering include：With Pt metal target as sputtering target material, chamber pressure is less than 1 × 10-3Pa, splashes
Penetrate temperature and be 20 DEG C, sputtering pressure is 2.0Pa, sputtering power is 20W, sputter gas are argon gas, flow is 40sccm；
(2) by stainless steel second metal mask and cover plate by the composite construction of the substrate obtaining in step (1) and hearth electrode
It is clipped in the middle and is screwed, square mangaic acid lanthanum film is prepared using radio-frequency magnetron sputter method, cover in step (1) system
On standby hearth electrode；The process conditions of wherein rf magnetron sputtering are：With lanthanum manganate ceramic target as sputtering target material, chamber pressure
Less than 5 × 10-4Pa, sputter temperature is 100 DEG C, and sputtering pressure is 1.5Pa, and sputtering power is 100W, argon gas stream in sputter gas
Measure as 40sccm, the volume fraction that oxygen accounts for sputter gas is 30%；
(3) by stainless steel first metal mask and cover plate by the substrate obtaining in step (2), hearth electrode and mangaic acid lanthanum film
The composite construction being formed is clipped in the middle and is screwed, and is prepared mutually vertical with hearth electrode using direct current magnetron sputtering process
Directly, top electrode that the Ag film being parallel to each other by several is formed (every Ag film thickness is 100nm, width is 80 μm), the demoulding
Arrive crossbar structure memristor afterwards；The process conditions of wherein magnetically controlled DC sputtering：With metal Ag target as sputtering target material, chamber pressure
Power is less than 1 × 10-3Pa, sputter temperature is 20 DEG C, and sputtering pressure is 2.0Pa, and sputtering power is 20W, and sputter gas are argon gas, stream
Measure as 40sccm.
The crossbar structure memristor of above-mentioned preparation method preparation, for successively by substrate, hearth electrode, functional layer and top electrode
The layer structure constituting, wherein, substrate is SiO2(300nm)/Si, the Pt electrode strip that hearth electrode is parallel to each other by several is constituted,
Every Pt electrode strip be thickness be 60nm, width be 80 μm of Pt film；The Ag top electrode bar that top electrode is parallel to each other by several
Constitute, every Ag top electrode bar be thickness be 100nm, width be 80 μm of Ag film, and top electrode and hearth electrode are mutually perpendicular to
Form crossbar structure, functional layer is the thick amorphous state mangaic acid lanthanum film of 60nm.
Study the resistance switch characteristic that the present embodiment prepares memristor using Semiconductor Parameter Analyzer, as shown in figure 9, device
The cut-in voltage that part switchs to low resistance state from high-impedance state is 0.28V；Device from low resistance state come back to high-impedance state closing voltage be-
0.35V；Small voltage using 50mV reads the resistance of high low resistance state, and high-impedance state is 16.8M Ω, and low resistance state is 3.0k Ω, resistance
On-off ratio is more than 103.
Embodiment 3：
A kind of preparation method of the crossbar structure memristor based on amorphous state mangaic acid lanthanum film of present invention, including following
Step：
(1) will by stainless steel first metal mask (live width of the parallel strip pattern of middle hollow out is 60 μm) and cover plate
SiO2(300nm)/Si substrate is clipped in the middle and by screw, the first metal mask and cover plate is fixed, using direct magnetic control
Sputtering method prepares the hearth electrode that the Pt film being parallel to each other by several is formed, and every Pt film thickness is 60nm, width is 60 μ
m；The process conditions of wherein magnetically controlled DC sputtering include：With Pt metal target as sputtering target material, chamber pressure is less than 1 × 10-3Pa, splashes
Penetrate temperature and be 20 DEG C, sputtering pressure is 1.0Pa, sputtering power is 10W, sputter gas are argon gas, flow is 20sccm；
(2) by stainless steel second metal mask and cover plate by the composite construction of the substrate obtaining in step (1) and hearth electrode
It is clipped in the middle and is screwed, square mangaic acid lanthanum film is prepared using radio-frequency magnetron sputter method, cover in step (1) system
On standby hearth electrode；The process conditions of wherein rf magnetron sputtering are：With lanthanum manganate ceramic target as sputtering target material, chamber pressure
Less than 5 × 10-4Pa, sputter temperature is 20 DEG C, and sputtering pressure is 0.8Pa, and sputtering power is 50W, argon flow amount in sputter gas
For 20sccm, in sputter gas, the volume fraction of oxygen is 10%；
(3) by stainless steel first metal mask and cover plate by the substrate obtaining in step (2), hearth electrode and mangaic acid lanthanum film
The composite construction being formed is clipped in the middle and is screwed, and is prepared mutually vertical with hearth electrode using direct current magnetron sputtering process
Directly, top electrode that the Ag film being parallel to each other by several is formed (every Ag film thickness is 80nm, width is 60 μm), after the demoulding
Arrive crossbar structure memristor；The process conditions of wherein magnetically controlled DC sputtering：With metal Ag target as sputtering target material, chamber pressure
Less than 1 × 10-3Pa, sputter temperature is 20 DEG C, and sputtering pressure is 1.0Pa, and sputtering power is 10W, and sputter gas are argon gas, flow
For 20sccm.
The crossbar structure memristor of above-mentioned preparation method preparation, for successively by substrate, hearth electrode, functional layer and top electrode
The layer structure constituting, wherein, substrate is SiO2(300nm)/Si, the Pt electrode strip that hearth electrode is parallel to each other by several is constituted,
Every Pt electrode strip be thickness be 60nm, width be 60 μm of Pt film；The Ag top electrode bar that top electrode is parallel to each other by several
Constitute, every Ag top electrode bar be thickness be 80nm, width be 60 μm of Ag film, and top electrode and hearth electrode are mutually perpendicular to shape
Become crossbar structure, functional layer is the thick amorphous state mangaic acid lanthanum film of 20nm.
Study the resistance switch characteristic that the present embodiment prepares memristor using Semiconductor Parameter Analyzer, as shown in Figure 10,
Most memristor units in crossbar structure are in the conduction state.
Claims (2)
1. a kind of preparation method of the crossbar structure memristor based on amorphous state mangaic acid lanthanum film is it is characterised in that described friendship
Fork arm structure memristor, for the layer structure being made up of substrate, hearth electrode, functional layer and top electrode successively, described hearth electrode by
The hearth electrode bar that several are parallel to each other is constituted, and the top electrode bar that described top electrode is parallel to each other by several is constituted, described hearth electrode
It is mutually perpendicular to top electrode；Described functional layer is amorphous state mangaic acid lanthanum film；The thickness of described amorphous state mangaic acid lanthanum film is
40nm～60nm；Described hearth electrode is the thick Pt film of 30nm～60nm, and described top electrode is that the thick Ag of 50nm～100nm is thin
Film；The width of described hearth electrode bar and described top electrode bar is 50 μm～80 μm；
The preparation method of described crossbar structure memristor comprises the following steps：
(1) hearth electrode is prepared on substrate using direct current magnetron sputtering process；The process conditions of direct current magnetron sputtering process are：With gold
Genus Pt target is sputtering target material, and chamber pressure is less than 1 × 10-3Pa, sputter temperature is 20 DEG C, and sputtering pressure is 1.0Pa～2.0Pa,
Sputtering power is 10W～20W, and sputter gas argon flow amount is 20sccm～40sccm；
(2) amorphous state mangaic acid lanthanum film is prepared on described hearth electrode using radio-frequency magnetron sputter method；Wherein, radio frequency magnetron splashes
The process conditions penetrated are：With lanthanum manganate ceramic target as sputtering target material, chamber pressure is less than 5 × 10-4Pa, sputter temperature scope is 20
DEG C～100 DEG C, sputtering pressure is 0.8Pa～1.5Pa, and sputtering power is 50W～100W, and in sputter gas, argon flow amount is
20sccm～40sccm, the volume fraction that oxygen volume accounts for sputter gas is 10%～30%；
(3) top orthogonal with hearth electrode electricity is prepared on described amorphous state mangaic acid lanthanum film using direct current magnetron sputtering process
Pole, that is, obtain described crossbar structure memristor；The process conditions of direct current magnetron sputtering process are：With metal Ag target as sputtering target
Material, chamber pressure is less than 1 × 10-3Pa, sputter temperature be 20 DEG C, sputtering pressure be 1.0Pa～2.0Pa, sputtering power be 10W～
20W, sputter gas argon flow amount is 20sccm～40sccm；
Wherein, in described step (1) neutralization procedure (3), hearth electrode and top electrode are all prepared by the first metal mask, and described the
The centre of one metal mask has the strip pierced pattern that several are parallel to each other, and the live width of described strip pattern is 50 μm～80 μ
m.
2. preparation method as claimed in claim 1 is it is characterised in that in described step (2), amorphous state mangaic acid lanthanum film passes through
Second metal mask preparation, the centre of described second metal mask has a square pierced pattern, described square pierced pattern
Several parallel strip pierced patterns being smaller in size than in described first metal mask overall size.
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