CN105552216B - A kind of method for strengthening extraordinary Hall effect - Google Patents
A kind of method for strengthening extraordinary Hall effect Download PDFInfo
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- CN105552216B CN105552216B CN201610053351.8A CN201610053351A CN105552216B CN 105552216 B CN105552216 B CN 105552216B CN 201610053351 A CN201610053351 A CN 201610053351A CN 105552216 B CN105552216 B CN 105552216B
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Abstract
The present invention provides a kind of method for strengthening extraordinary Hall effect, can control the power of ordinary Hall effect and extraordinary Hall effect by regulating and controlling voltage.Methods described is carried out in the following manner：Step (1), electrode is prepared with pulsed laser deposition on substrate；Step (2), prepares ferroelectric thin film on electrode layer；Step (3), on ferroelectric thin film, plate two criss-cross Pt films；Step (4), by Ag be soldered to Pt 6 end points or silver paste point on Pt end points；Step (5), measure Hall effect.Pt is deposited on the magnetic material of insulation by the present invention, and the power of ordinary Hall effect and extraordinary Hall effect so that its electric conductivity and magnetic are measured and characterized, can be directly regulated and controled by external electric field.
Description
Technical field
The present invention relates to Hall effect research field, and in particular to a kind of extraordinary Hall effect research method.
Background technology
Hall effect (Hall Effect) found in 1879 by E.H. Halls, it define magnetic field and induced voltage it
Between relation, this effect and traditional inductive effects are entirely different.When electric current by one be located at magnetic field in conductor when
Wait, magnetic field can produce an active force on electron motion direction to the electronics in conductor, so as at the both ends of conductor
Produce voltage difference.Although this effect just as everybody knows and is understood that the sensor based on Hall effect exists many years ago
It is before material technology acquisition major progress and impracticable, until there is the constant magnet of high intensity and working in small voltage output
Circuit for signal conditioning.According to design and the difference of configuration, hall effect sensor can be used as ON/OFF sensor or linear biography
Sensor.
However, in ferromagnetic material, Hall resistance rate ρ H The contribution of other parts is also included, this is mainly derived from ferromagnetic material
The spontaneous magnetization of material, it can be formulated as：
ρ H=RoB+4 π RsM (1)
Formula（1）In,RoFor ordinary Hall coefficient, andR s For unusual Hall coefficient.In in the past few years, unusual Hall
Effect (the π of AHE=4R S M) the magnetic mechanism that is mainly used in research and analysis dilute magnetic semiconductor (DSM) and in spinning electron
There is the material of potential application in terms of.From formula（1）It can be seen that extraordinary Hall effect part is proportional to the intensity of magnetizationM。
However, some nearest experiments show nonmonotonic variation relation between Hall resistance and the intensity of magnetization be present, have
When change on symbol can even occur, therefore, the research to extraordinary Hall effect mechanism has certain meaning.People send out
It is existing, in addition to magnetic material, in some nonmagnetic substances, such as the nonmagnetic layer Pt on magnetic material surface is grown in,
It is observed that extraordinary Hall effect.However, when very thin one layer of Pt thin film depositions, on thicker magnetic metal, it is conductive
Property and magnetic will be covered by magnetic metal.
The content of the invention
It is an object of the invention to provide a kind of method for strengthening extraordinary Hall effect, can be controlled just by regulating and controlling voltage
The power of normal Hall effect and extraordinary Hall effect.
The technical proposal of the invention is realized in this way：A kind of method for strengthening extraordinary Hall effect, is according to following sides
What formula was carried out：Step（1）, electrode is prepared on substrate with pulsed laser deposition, first distinguishes the substrate of (001) orientation
Cleaned, dried with ultrasonic wave in acetone, alcohol；Chip bench is polished with sand paper, and cleaned up, by what is dried
Substrate is bonded on chip bench with heat conduction elargol；It is put into after drying in cavity on warm table, starts to be evacuated to 10-4Pa, heating
650 ~ 750 DEG C of chip bench, substrate is blocked with baffle plate, carry out pre-sputtering to remove the dirt of target material surface, pre-sputtering process
In, plumage brightness end and chip bench are tangent；Chip bench and target are rotated, and makes laser in X, Y direction particles；Treat temperature,
After stable gas pressure, baffle plate is removed, is deposited, prepares electrode layer；
Step（2）, ferroelectric thin film is prepared on electrode layer, on the basis of step 1, by temperature setting to 600 ~ 700 DEG C,
Target is converted into ferroelectricity target, oxygen is set to 15 Pa；After reaching target temperature, substrate is blocked with baffle plate, carried out pre-
Sputtering during pre-sputtering, makes plumage brightness end and chip bench tangent to remove the dirt of ferroelectricity target material surface.Rotate chip bench and
Target, and make laser in X, Y direction particles；After treating temperature, stable gas pressure, baffle plate is removed, is deposited, obtains iron
Conductive film, after deposition terminates, gas and slow cooling are filled with as required；
Step（3）, on ferroelectric thin film, plate two criss-cross Pt films；In step（2）On the basis of, apparatus
There are two criss-cross mask plates to block ferroelectric thin film, utilize the Pt that pulsed laser deposition deposit thickness is about 1 ~ 5 nm；
Air pressure is 10 during deposition-4Pa；
Step（4）, on the basis of step 3, by ultrasonic bond by Ag be soldered to Pt 6 end points or silver paste point to Pt's
On end points；
Step（5）, Hall effect is measured, Ag and electrode are connected to the both positive and negative polarity of the pulse power, applied different
The measurement that PPMS systems carry out Hall effect is put into after voltage, obtains the Hall effect under different polarised directions, different pulse numbers
Should.
The substrate is strontium titanate monocrystal chip or lanthanuma luminate single crystal substrate.
The electrode is La0.7Sr0.3MnO3Electrode or La0.7Sr0.3CoO3Electrode or SrRuO3Electrode or metal.
The ferroelectric thin film is PbTiO3Or BiFeO3Film or BaTiO3Film.
The thickness of the Pt films is 1 ~ 5nm, and a hem width 0.4mm wide Pt, narrow one side are 0.1mm.
Pt is deposited on the magnetic material of insulation by the present invention, can be to be measured to its electric conductivity and magnetic and table
Sign, the power of ordinary Hall effect and extraordinary Hall effect can be directly regulated and controled by external electric field.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is the required accompanying drawing used in technology description to be briefly described, it should be apparent that, drawings in the following description are only this
Some embodiments of invention, for those of ordinary skill in the art, on the premise of not paying creative work, can be with
Other accompanying drawings are obtained according to these accompanying drawings.
Fig. 1 is the measurement structure figure of the present invention.
Fig. 2 is the test result figure of embodiment 1.
Fig. 3 is the test result figure of embodiment 2.
Fig. 4 is the test result figure of embodiment 3.
Fig. 5 is the test result figure of embodiment 4.
Fig. 6 is the schematic diagram that the present invention produces extraordinary Hall effect.
Wherein, in Fig. 2 ~ 5, transverse axis H represents magnetic field intensity, the R of the longitudinal axisxyRepresent Hall resistance.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, rather than whole embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other under the premise of creative work is not paid
Embodiment, belong to the scope of protection of the invention.
A kind of method for strengthening extraordinary Hall effect, is carried out in the following manner：Step（1）, sunk with pulse laser
Area method prepares electrode on substrate, first carries out the substrate that (001) is orientated clearly with ultrasonic wave in acetone, alcohol respectively
Wash, dry；Chip bench is polished with sand paper, and cleaned up, the substrate dried is bonded on chip bench with heat conduction elargol；
It is put into after drying in cavity on warm table, starts to be evacuated to 10-4Pa, 650 ~ 750 DEG C of chip bench of heating, such as 650 DEG C,
700 DEG C or 750 DEG C, heating is slow, is such as heated to 700 DEG C with 90min or so than saying, is blocked substrate with baffle plate, and be passed through
Required gas is to 40 ~ 50 Pa；Pre-sputtering is carried out to remove the dirt of target material surface, target is exposed fresh surface, pre-sputtering
Process is generally 2 ~ 5min, during pre-sputtering, the parameter such as adjustment laser optical path, range, makes plumage brightness end and chip bench tangent；
Chip bench and target are rotated, and makes laser in X, Y direction particles；After treating temperature, stable gas pressure, baffle plate is removed, is entered
Row deposition, prepares electrode layer；Suitable sedimentation time is selected according to film thickness when prepared by electrode layer, such as, pulse swashs
Light frequency is arranged to 2Hz, energy 200mJ, if the LSMO thickness prepared is 20nm, deposits 1min.
Step（2）, BTO films are prepared on electrode layer, on the basis of step 1, by temperature setting to 600 ~ 700 DEG C,
Such as 600 DEG C, 650 DEG C or 700 DEG C, target is converted into BTO, oxygen is set to 15 Pa；After reaching target temperature, baffle plate is used
Substrate is blocked, and gas needed for being passed through is to arriving 15Pa（If the bottom electrode prepared is oxide, need to be passed through oxygen, or
The mixed gas of person's oxygen and inert gas.If bottom electrode is metal, such as Pt, Au, etc. need not then be passed through gas）；If
Determine the energy 240mJ and frequency parameter 5Hz of laser, carry out pre-sputtering to remove the dirt of BTO target material surfaces, target is exposed newly
Fresh surface, pre-sputtering time are generally 2 ~ 5min, during pre-sputtering, adjust the parameter such as laser optical path and range, make plumage brightness
End is tangent with chip bench.Chip bench and target are rotated, and makes laser in X, Y direction particles；Treat temperature, stable gas pressure
Afterwards, baffle plate is removed, is deposited, obtains BTO films.Depositing 500nm or so BTO needs a hour, deposition end
Afterwards, certain gas is filled with as required（If the bottom electrode prepared is oxide, need to be passed through oxygen, or oxygen with
The mixed gas of inert gas.If bottom electrode is metal, such as Pt, Au, etc. need not then be passed through gas）And slow cooling；
Step（3）, on BTO films, plate two criss-cross Pt films；On the basis of step 2, with two
Individual criss-cross mask plate blocks BTO films, utilizes step（1）In similar pulsed laser deposition deposit thickness be about 1 ~
5 nm Pt；Air pressure is 10 during deposition-4Pa；Do not heated up in deposition process, obstructed oxygen.
Step（4）, on the basis of step 3, by ultrasonic bond by Ag be soldered to Pt 6 end points or silver paste point to Pt's
On end points；
Step（5）, Hall effect is measured, Ag and electrode are connected to the both positive and negative polarity of the pulse power, applied different
PPMS systems are put into after voltage（Physical Property Measurement System integrate physical property measuring system）Carry out
The measurement of Hall effect, obtain the Hall effect under different polarised directions, different pulse numbers.
BaTiO in the application3(write a Chinese character in simplified form：BTO it is) ferroelectric material, PbTiO can also be used3Or BiFeO3、BiMnO3Deng it
Its ferroelectric thin film substitutes.
As shown in figure 1, product measured by the present invention includes the substrate of lower floor, deposition on substrate electrode, electrode deposition BTO layers
（That is BATiO3）, the Pt films of two cross shapes are plated on BTO layers.Then in criss-cross 6 short points, welding Ag electricity
Pole.When measurement, as needed with wire by I1、I2、V1、V2、V3And V4Two or four or six connect.Magnetic field
Perpendicular to surface, transverse direction galvanization when measurement（I.e. electric current is in I1And I2Between flow）, longitudinal direction measurement voltage.
In the application, the substrate is strontium titanates（SrTiO3：STO）Monocrystal chip or lanthanum aluminate（LaAlO3：LAO）It is single
Brilliant substrate.
The electrode is La0.7Sr0.3MnO3（LSMO）Electrode or La0.7Sr0.3CoO3Electrode or SrRuO3The gold such as electrode or Au
Category or oxide electrode.
The thickness of the Pt films is 1 ~ 5nm, and the wide hem width 0.4mm of the Pt films of cross shape, narrow one side are
0.1mm。
Several embodiments illustrate extraordinary Hall effect detection case below：
Embodiment 1：When not applying voltage, in PPMS system detectio Hall effect, as shown in Fig. 2 finding Hall electricity
With being linear relationship between the change in magnetic field, this explanation is ordinary Hall effect, does not find extraordinary Hall effect for resistance.
Embodiment 2：Apply 100 40V pulse voltage, as shown in fig. 3, it was found that between resistance and magnetic field under low field base
This is linear, but deviates linear relation under highfield, illustrates in addition to having ordinary Hall effect, also in the presence of unusual Hall
Effect.
Embodiment 3：Apply 1000 40V pulse voltage, as shown in Figure 4, it can be seen that obvious between resistance and magnetic field
Linear relationship is not belonging to, that is, unusual Hall effect be present.
Embodiment 4：Apply 5000 40V pulse voltage, as shown in Figure 5, it can be seen that obvious between resistance and magnetic field
Linear relationship is not belonging to, that is, unusual Hall effect be present, and the contribution of extraordinary Hall effect part becomes apparent from, in the present embodiment
Extraordinary Hall effect becomes apparent from relative to embodiment 3.
And found by contrasting, Pt of the curve in Fig. 4 and Fig. 5 with the being grown in magnetic material split-phase of Hall effect ten
Seemingly, illustrate by applying different electric fields, the Hall effect that may be significantly.
That apply in embodiment 2 ~ 4 is all forward voltage 40V, when backward voltage -40V is applied, there is similar knot
Fruit.
Fig. 6 shows the schematic diagram of extraordinary Hall effect, sees from figure, BTO membrane polarizations upward when, close to Pt
Surface is BTO positive charge（cation）, Lacking oxygen is under the electric field also close to Pt, so two kinds of positive charges produce upwards simultaneously
Electric field, its effect is exactly the electronics in Pt metals（electron）Attract；It is exactly negative electricity conversely, when polarization down
Lotus leans on（anion）Near surface, Lacking oxygen is close to following LSMO sides, and so, the negative electrical charge close to surface can produce to electronics in Pt
A raw repulsive interaction.
Generally speaking, no matter polarised direction down still upward, Pt/BTO interfaces can all have certain electric field, wherein
Because electric field caused by BTO polarization charge is E=s/2e0(BTO films are considered as here the plate of infinity, because BTO surfaces
Size be centimetres, and Pt thickness is nanometer), E be BTO polarization charges be in electric field caused by BTO/Pt interfaces, s
The charge density on BTO surfaces（The μ C/cm of its polarization intensity ~ 60 can be considered as equal to2）, e0For the dielectric constant in vacuum, 8.85 ×
10-12F/m.Electric field caused by BTO polarization charges can be calculated is about 3.4 × 1010The V/nm of V/m=34, equivalent in Pt films
Upper and lower surface between apply 100 V voltage.It is if just bigger plus the electric field that Lacking oxygen is electrically charged, its value.Due to Pt
Acted on very strong SO coupling, the structure of its electronics may change under forceful electric power field action, so as to cause
The change of magnetic, it is changed into being magnetic from nonmagnetic, so as to produce the Hall effect of abnormality.
Pt will be deposited on the magnetic material of insulation by the present invention, can be to be measured to its electric conductivity and magnetic and table
Sign.It can see from above-mentioned each embodiment, the present invention directly can regulate and control extraordinary Hall effect and normal by external electric field
The power of Hall effect.And existing traditional method is growth magnetosphere, once grown, its property cannot change, suddenly
Your effect is exactly constant, it is impossible to is regulated and controled.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
God any modification, equivalent substitution and improvements made etc., should be included in the scope of the protection with principle.
Claims (5)
- A kind of 1. method for strengthening extraordinary Hall effect, it is characterised in that carry out in the following manner：Step（1）, electrode is prepared on substrate with pulsed laser deposition, first by the substrate of (001) orientation respectively third Cleaned, dried with ultrasonic wave in ketone, alcohol；Chip bench is polished with sand paper, and cleaned up, the substrate that will be dried It is bonded at heat conduction elargol on chip bench；It is put into after drying in cavity on warm table, starts to be evacuated to 10-4Pa, heat substrate 650 DEG C of platform, substrate is blocked with baffle plate, carry out pre-sputtering to remove the dirt of target material surface, during pre-sputtering, plumage brightness end End is tangent with chip bench；Chip bench and target are rotated, and makes laser in X, Y direction particles；Treat temperature, stable gas pressure it Afterwards, baffle plate is removed, is deposited, prepares electrode layer；Step（2）, ferroelectric thin film is prepared on electrode layer, in step（1）On the basis of, by temperature setting to 600 DEG C, target Material is converted into ferroelectricity target, and oxygen is set into 15 Pa；After reaching target temperature, substrate is blocked with baffle plate, carries out pre-sputtering To remove the dirt of ferroelectricity target material surface, during pre-sputtering, make plumage brightness end and chip bench tangent；Chip bench and target are rotated, and makes laser in X, Y direction particles；After treating temperature, stable gas pressure, gear is removed Plate, deposited, obtain ferroelectric thin film, after deposition terminates, be filled with gas and slow cooling as required；Step（3）, on ferroelectric thin film, plate two criss-cross Pt films；In step（2）On the basis of, with two Individual criss-cross mask plate blocks ferroelectric thin film, utilizes the Pt that pulsed laser deposition deposit thickness is 1 ~ 5 nm；Deposition During air pressure be 10-4Pa；Step（4）, in step（3）On the basis of, by ultrasonic bond by Ag be soldered to Pt 6 end points or silver paste point to Pt end Point on；Step（5）, Hall effect is measured, Ag and electrode are connected to the both positive and negative polarity of the pulse power, apply different voltage The measurement that PPMS systems carry out Hall effect is put into afterwards, obtains the Hall effect under different polarised directions, different pulse numbers.
- 2. the method for enhancing extraordinary Hall effect according to claim 1, it is characterised in that：The substrate is strontium titanates list Brilliant substrate or lanthanuma luminate single crystal substrate.
- 3. the method for enhancing extraordinary Hall effect according to claim 1, it is characterised in that：The electrode is La0.7Sr0.3MnO3Electrode or La0.7Sr0.3CoO3Electrode or SrRuO3Electrode or metal.
- 4. the method for enhancing extraordinary Hall effect according to claim 1, it is characterised in that：The ferroelectric thin film is PbTiO3Or BiFeO3Film or BaTiO3Film.
- 5. the method for the enhancing extraordinary Hall effect according to claim 1 or 2 or 3 or 4, it is characterised in that：The Pt is thin The thickness of film is 1 ~ 5nm, and a hem width 0.4mm wide Pt, narrow one side are 0.1mm.
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| CN109536990A (en) * | 2018-10-15 | 2019-03-29 | 华南理工大学 | A kind of flat thin-film electro catalyst operation electrode and its preparation method and application |
| CN111244269B (en) * | 2020-03-12 | 2021-11-30 | 福州大学 | Three-dimensional topological insulator Bi2Te3Method for enhancing photoinduced abnormal Hall current |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5652445A (en) * | 1995-04-21 | 1997-07-29 | Johnson; Mark B. | Hybrid hall effect device and method of operation |
| CN102024904A (en) * | 2010-09-30 | 2011-04-20 | 北京科技大学 | Film material for high-sensitivity metal Hall sensor and preparation method of film material |
| CN104362250A (en) * | 2014-10-14 | 2015-02-18 | 北京工业大学 | Heterojunction with exchange bias effect and electricity resulted resistance change effect and preparation method thereof |
| CN105374932A (en) * | 2015-10-22 | 2016-03-02 | 重庆科技学院 | Structure for regulating and controlling Hall effect by means of polarization direction |
-
2016
- 2016-01-26 CN CN201610053351.8A patent/CN105552216B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5652445A (en) * | 1995-04-21 | 1997-07-29 | Johnson; Mark B. | Hybrid hall effect device and method of operation |
| CN102024904A (en) * | 2010-09-30 | 2011-04-20 | 北京科技大学 | Film material for high-sensitivity metal Hall sensor and preparation method of film material |
| CN104362250A (en) * | 2014-10-14 | 2015-02-18 | 北京工业大学 | Heterojunction with exchange bias effect and electricity resulted resistance change effect and preparation method thereof |
| CN105374932A (en) * | 2015-10-22 | 2016-03-02 | 重庆科技学院 | Structure for regulating and controlling Hall effect by means of polarization direction |
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