CN105552216A - Method for strengthening abnormal hall effect - Google Patents
Method for strengthening abnormal hall effect Download PDFInfo
- Publication number
- CN105552216A CN105552216A CN201610053351.8A CN201610053351A CN105552216A CN 105552216 A CN105552216 A CN 105552216A CN 201610053351 A CN201610053351 A CN 201610053351A CN 105552216 A CN105552216 A CN 105552216A
- Authority
- CN
- China
- Prior art keywords
- hall effect
- electrode
- substrate
- target
- chip bench
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Hall/Mr Elements (AREA)
- Physical Vapour Deposition (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
The invention provides a method for strengthening an abnormal hall effect. The strength of a normal hall effect and an abnormal hall effect can be controlled by regulating and controlling a voltage. The method is carried out by the following steps: (1) preparing an electrode on a substrate by a pulsed laser deposition method; (2) preparing a ferroelectric film on an electrode layer; (3) plating the ferroelectric film with two cross-shaped Pt films; (4) welding Ag at six endpoints of Pt or welding silver paste points at the endpoints of the Pt; and (5) measuring the hall effect. The Pt is deposited on an insulated magnetic material, so that the conductivity and the magnetism can be measured and represented; and the strength of the normal hall effect and the abnormal hall effect can be directly regulated and controlled through an external electric field.
Description
Technical field
The present invention relates to Hall effect research field, be specifically related to a kind of extraordinary Hall effect research method.
Background technology
Hall effect (HallEffect) was found in 1879 by E.H. Hall, it defined the relation between magnetic field and induced voltage, and this effect is completely different with traditional inductive effects.When electric current is arranged in the conductor in magnetic field by one time, magnetic field can produce one perpendicular to the active force on electron motion direction to the electronics in conductor, thus produces voltage difference at the two ends of conductor.Although this effect is many years ago just by as everybody knows and understand, impracticable before material technology obtains major progress based on the transducer of Hall effect, until there is the constant magnet of high strength and worked in the circuit for signal conditioning that small voltage exports.According to the difference designed and configure, hall effect sensor can as ON/OFF transducer or linear transducer.
But, in ferromagnetic material, Hall resistance rate ρ
halso comprise the contribution of other parts, this is mainly derived from the spontaneous magnetization of ferromagnetic material, can be formulated as:
ρ
H＝R
oB+4πR
sM(1)
In formula (1), Ro is ordinary Hall coefficient, and R
sfor unusual Hall coefficient.In the past few years, extraordinary Hall effect (AHE=4 π R
sm) be mainly used in the magnetic mechanism in research and analysis dilute magnetic semiconductor (DSM) and there is the material of potential application in spintronics.Can see from formula (1), extraordinary Hall effect part is proportional to magnetization M.
But some nearest experiments show to there is nonmonotonic variation relation between Hall resistance and the magnetization, the change on symbol sometimes even can occur, therefore, have certain meaning to the research of extraordinary Hall effect mechanism.It is found that, except magnetic material, in some nonmagnetic substances, such as, grow the nonmagnetic layer Pt on magnetic material surface, also can observe extraordinary Hall effect.But, when the Pt thin film deposition of very thin one deck on thicker magnetic metal, its conductivity and magnetic will cover by magnetic metal.
Summary of the invention
The object of this invention is to provide a kind of method strengthening extraordinary Hall effect, the power of ordinary Hall effect and extraordinary Hall effect can be controlled by regulation and control voltage.
Technical scheme of the present invention is achieved in that a kind of method strengthening extraordinary Hall effect, carry out in the following manner: step (1), on substrate, electrode is prepared with pulsed laser deposition, first the substrate of (001) orientation is cleaned with ultrasonic wave respectively in acetone, alcohol, dry; With sand paper, chip bench is polished, and clean up, the substrate heat conduction elargol dried is bonded on chip bench; Put into after drying on cavity heating station, start to be evacuated to 10
-4pa, heated substrate platform 650 ~ 750 DEG C, blocks substrate with baffle plate, carries out pre-sputtering to remove the dirt of target material surface, in pre-sputtering process, plumage brightness end and chip bench tangent; Rotate chip bench and target, and make laser at X, Y-direction particles; After treating temperature, stable gas pressure, remove baffle plate, deposit, prepare electrode layer;
Step (2), electrode layer prepares ferroelectric thin film, on the basis of step 1, temperature is set to 600 ~ 700 DEG C, target is converted to ferroelectric target, oxygen is set to 15Pa; After reaching target temperature, with baffle plate, substrate is blocked, carries out pre-sputtering to remove the dirt of ferroelectric target material surface, in pre-sputtering process, make plumage brightness end and chip bench tangent.Rotate chip bench and target, and make laser at X, Y-direction particles; After treating temperature, stable gas pressure, remove baffle plate, deposit, obtain ferroelectric thin film, after deposition terminates, insufflation gas slow cooling as required;
Step (3), on ferroelectric thin film, plates two criss-cross Pt films; On the basis of step (2), with having two criss-cross mask plates, ferroelectric thin film being blocked, utilizing pulsed laser deposition deposit thickness for the Pt of about 1 ~ 5nm; In the process of deposition, air pressure is 10
-4pa;
Step (4), on the basis of step 3, to be soldered to 6 end points of Pt or silver slurry point on the end points of Pt by ultrasonic bond by Ag;
Step (5), measures Hall effect, Ag and electrode is connected to the both positive and negative polarity of the pulse power, puts into the measurement that PPMS system carries out Hall effect after applying different voltage, obtain the Hall effect under different polarised direction, different pulse number.
Described substrate is strontium titanate monocrystal chip or lanthanuma luminate single crystal substrate.
Described electrode is La
0.7sr
0.3mnO
3electrode or La
0.7sr
0.3coO
3electrode or SrRuO
3electrode or metal.
Described ferroelectric thin film is PbTiO
3or BiFeO
3film or BaTiO
3film.
The thickness of described Pt film be the wide hem width 0.4mm of 1 ~ 5nm, Pt, narrow be 0.1mm.
Pt is deposited on the magnetic material of insulation by the present invention, just can measure its conductivity and magnetic and characterize, directly can be regulated and controled the power of ordinary Hall effect and extraordinary Hall effect by external electric field.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is measurement structure chart of the present invention.
Fig. 2 is the test result figure of embodiment 1.
Fig. 3 is the test result figure of embodiment 2.
Fig. 4 is the test result figure of embodiment 3.
Fig. 5 is the test result figure of embodiment 4.
Fig. 6 is the schematic diagram that the present invention produces extraordinary Hall effect.
Wherein, in Fig. 2 ~ 5, transverse axis H represents magnetic field intensity, the R of the longitudinal axis
xyrepresent Hall resistance.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not paying the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
A kind of method strengthening extraordinary Hall effect, carry out in the following manner: step (1), on substrate, prepare electrode with pulsed laser deposition, first the substrate of (001) orientation is cleaned with ultrasonic wave respectively in acetone, alcohol, dry; With sand paper, chip bench is polished, and clean up, the substrate heat conduction elargol dried is bonded on chip bench; Put into after drying on cavity heating station, start to be evacuated to 10
-4pa, heated substrate platform 650 ~ 750 DEG C, such as 650 DEG C, 700 DEG C or 750 DEG C, heating is wanted slowly, than saying as being heated to 700 DEG C with about 90min, to be blocked by substrate, and pass into desired gas to 40 ~ 50Pa with baffle plate; Carry out pre-sputtering to remove the dirt of target material surface, make target expose fresh surface, pre-sputtering process is generally 2 ~ 5min, in pre-sputtering process, the adjustment parameter such as laser optical path, range, make plumage brightness end and chip bench tangent; Rotate chip bench and target, and make laser at X, Y-direction particles; After treating temperature, stable gas pressure, remove baffle plate, deposit, prepare electrode layer; Select suitable sedimentation time according to film thickness time prepared by electrode layer, such as, pulse laser frequency is set to 2Hz, and energy is 200mJ, if time the LSMO thickness of preparation is 20nm, and deposition 1min.
Step (2), electrode layer is prepared BTO film, on the basis of step 1, temperature is set to 600 ~ 700 DEG C, such as 600 DEG C, 650 DEG C or 700 DEG C, target is converted to BTO, oxygen is set to 15Pa; After reaching target temperature, with baffle plate, substrate is blocked, and pass into desired gas and (if the bottom electrode of preparation is oxide, then need to pass into oxygen, or the mist of oxygen and inert gas to 15Pa.Such as, if bottom electrode is metal, Pt, Au, etc., then do not need to pass into gas); The energy 240mJ of setting laser and frequency parameter 5Hz, carries out pre-sputtering to remove the dirt of BTO target material surface, makes target expose fresh surface, the pre-sputtering time is generally 2 ~ 5min, in pre-sputtering process, the adjustment parameter such as laser optical path and range, make plumage brightness end and chip bench tangent.Rotate chip bench and target, and make laser at X, Y-direction particles; After treating temperature, stable gas pressure, remove baffle plate, deposit, obtain BTO film.The BTO of deposition about 500nm needs one hour, and after deposition terminates, being filled with certain gas as required (if the bottom electrode of preparation is oxide, then needs to pass into oxygen, or the mist of oxygen and inert gas.Such as, if bottom electrode is metal, Pt, Au, etc., then do not need to pass into gas) and slow cooling;
Step (3), on BTO film, plates two criss-cross Pt films; On the basis of step 2, with having two criss-cross mask plates, BTO film being blocked, utilizing pulsed laser deposition deposit thickness similar in step (1) to be the Pt of about 1 ~ 5nm; In the process of deposition, air pressure is 10
-4pa; Do not heat up in deposition process, obstructed oxygen.
Step (4), on the basis of step 3, to be soldered to 6 end points of Pt or silver slurry point on the end points of Pt by ultrasonic bond by Ag;
Step (5), measure Hall effect, Ag and electrode are connected to the both positive and negative polarity of the pulse power, put into the measurement that PPMS system (the comprehensive physical property measuring system of PhysicalPropertyMeasurementSystem) carries out Hall effect after applying different voltage, obtain the Hall effect under different polarised direction, different pulse number.
BaTiO in the application
3(writing a Chinese character in simplified form: BTO) is ferroelectric material, also can use PbTiO
3or BiFeO
3, BiMnO
3substitute Deng other ferroelectric thin film.
As shown in Figure 1, product measured by the present invention comprises the substrate of lower floor, deposition on substrate electrode, electrode deposition BTO layer (i.e. BATiO
3), plate the Pt film of two cross shape on BTO layer.Then at criss-cross 6 short points, welding Ag electrode.Measurement in, as required with wire by I
1, I
2, V
1, V
2, V
3and V
4two or four or six couple together.Vertical magnetic field is in surface, and when measurement, (namely electric current is at I for horizontal galvanization
1and I
2between flowing), longitudinal measuring voltage.
In the application, described substrate is strontium titanates (SrTiO
3: STO) monocrystal chip or lanthanum aluminate (LaAlO
3: LAO) monocrystal chip.
Described electrode is La
0.7sr
0.3mnO
3(LSMO) electrode or La
0.7sr
0.3coO
3electrode or SrRuO
3the metal such as electrode or Au or oxide electrode.
The thickness of described Pt film is 1 ~ 5nm, the wide hem width 0.4mm of the Pt film of cross shape, narrow be 0.1mm.
Several embodiment illustrates extraordinary Hall effect detection case below:
Embodiment 1: when not executing alive, in PPMS systems axiol-ogy Hall effect, as indicated with 2, find that between the change of Hall resistance with magnetic field be linear relationship, this explanation is ordinary Hall effect, does not find extraordinary Hall effect.
Embodiment 2: the pulse voltage applying 100 40V, as shown in Figure 3, finds low substantially linear after the match between resistance and magnetic field, but off-straight relation under highfield, illustrate except having ordinary Hall effect, also there is extraordinary Hall effect.
Embodiment 3: the pulse voltage applying 1000 40V, as shown in Figure 4, can find out and obviously not belong to linear relationship between resistance and magnetic field, namely there is unusual Hall effect.
Embodiment 4: the pulse voltage applying 5000 40V; as shown in Figure 5, can find out and obviously not belong to linear relationship between resistance and magnetic field namely there is unusual Hall effect; and the contribution of extraordinary Hall effect part is more obvious, in the present embodiment, extraordinary Hall effect is more obvious relative to embodiment 3.
And found by contrast, the curve in Fig. 4 and Fig. 5 is quite similar in the Hall effect of the Pt of magnetic material with growth, illustrating by applying different electric fields, can obtain obvious Hall effect.
That apply in embodiment 2 ~ 4 is all forward voltage 40V, in time applying reverse voltage-40V, has roughly the same result.
Fig. 6 shows the schematic diagram of extraordinary Hall effect, see from figure, BTO membrane polarization upward time, it is the positive charge (cation) of BTO near Pt surface, Lacking oxygen is under the electric field also near Pt, so two kinds of positive charges produce electric field upwards simultaneously, its effect has attracted the electronics (electron) in Pt metal exactly; Otherwise when polarizing down, be exactly that negative electrical charge is closely surperficial by (anion), the close LSMO side below of Lacking oxygen, like this, can produce a repulsive interaction to electronics in Pt near surperficial negative electrical charge.
Generally speaking, regardless of polarised direction down still upward, all can there is certain electric field in Pt/BTO interface, the electric field wherein produced due to the polarization charge of BTO is E=σ/2 ε
0(BTO film is considered as infinitely-great plate here, because BTO surface is of a size of centimetres, and the thickness of Pt is nanometer), E is the electric field that BTO polarization charge produces in BTO/Pt interface, and σ is that the charge density on BTO surface (can be considered as equaling its polarization intensity ~ 60 μ C/cm
2), ε
0for the dielectric constant in vacuum, 8.85 × 10
-12f/m.The electric field that can calculate the generation of BTO polarization charge is about 3.4 × 10
10v/m=34V/nm, is equivalent to the voltage applying 100V between the upper and lower surface of Pt film.If add the charged electric field of Lacking oxygen, its value is just larger.Because Pt has very strong SO coupling effect, under highfield effect, the structure of its electronics just may change, thus causes the change of magnetic, is magnetic from nonmagnetic becoming, thus produces unusual Hall effect.
The present invention just Pt is deposited on the magnetic material of insulation, just can measure its conductivity and magnetic and characterize.Can see from each embodiment above-mentioned, the present invention directly can regulate and control the power of extraordinary Hall effect and ordinary Hall effect by external electric field.And existing traditional method is growth magnetosphere, once grown, its character just can not change, and Hall effect is exactly constant, can not regulate and control.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (5)
1. strengthen a method for extraordinary Hall effect, it is characterized in that carrying out in the following manner:
Step (1), prepares electrode with pulsed laser deposition on substrate, is first cleaned with ultrasonic wave in acetone, alcohol respectively by the substrate of (001) orientation, dries; With sand paper, chip bench is polished, and clean up, the substrate heat conduction elargol dried is bonded on chip bench; Put into after drying on cavity heating station, start to be evacuated to 10
-4pa, heated substrate platform 650 ~ 750 DEG C, blocks substrate with baffle plate, carries out pre-sputtering to remove the dirt of target material surface, in pre-sputtering process, plumage brightness end and chip bench tangent; Rotate chip bench and target, and make laser at X, Y-direction particles; After treating temperature, stable gas pressure, remove baffle plate, deposit, prepare electrode layer;
Step (2), electrode layer prepares ferroelectric thin film, on the basis of step 1, temperature is set to 600 ~ 700 DEG C, target is converted to ferroelectric target, oxygen is set to 15Pa; After reaching target temperature, with baffle plate, substrate is blocked, carries out pre-sputtering to remove the dirt of ferroelectric target material surface, in pre-sputtering process, make plumage brightness end and chip bench tangent.Rotate chip bench and target, and make laser at X, Y-direction particles; After treating temperature, stable gas pressure, remove baffle plate, deposit, obtain ferroelectric thin film, after deposition terminates, insufflation gas slow cooling as required;
Step (3), on ferroelectric thin film, plates two criss-cross Pt films; On the basis of step (2), with having two criss-cross mask plates, ferroelectric thin film being blocked, utilizing pulsed laser deposition deposit thickness for the Pt of about 1 ~ 5nm; In the process of deposition, air pressure is 10
-4pa;
Step (4), on the basis of step 3, to be soldered to 6 end points of Pt or silver slurry point on the end points of Pt by ultrasonic bond by Ag;
Step (5), measures Hall effect, Ag and electrode is connected to the both positive and negative polarity of the pulse power, puts into the measurement that PPMS system carries out Hall effect after applying different voltage, obtain the Hall effect under different polarised direction, different pulse number.
2. the method for enhancing extraordinary Hall effect according to claim 1, is characterized in that: described substrate is strontium titanate monocrystal chip or lanthanuma luminate single crystal substrate.
3. the method for enhancing extraordinary Hall effect according to claim 1, is characterized in that: described electrode is La
0.7sr
0.3mnO
3electrode or La
0.7sr
0.3coO
3electrode or SrRuO
3electrode or metal.
4. the method for enhancing extraordinary Hall effect according to claim 1, is characterized in that: described ferroelectric thin film is PbTiO
3or BiFeO
3film or BaTiO
3film.
5. the method for the enhancing extraordinary Hall effect according to claim 1 or 2 or 3 or 4, is characterized in that: the thickness of described Pt film be the wide hem width 0.4mm of 1 ~ 5nm, Pt, narrow be 0.1mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610053351.8A CN105552216B (en) | 2016-01-26 | 2016-01-26 | A kind of method for strengthening extraordinary Hall effect |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610053351.8A CN105552216B (en) | 2016-01-26 | 2016-01-26 | A kind of method for strengthening extraordinary Hall effect |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105552216A true CN105552216A (en) | 2016-05-04 |
| CN105552216B CN105552216B (en) | 2018-02-02 |
Family
ID=55831290
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610053351.8A Active CN105552216B (en) | 2016-01-26 | 2016-01-26 | A kind of method for strengthening extraordinary Hall effect |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105552216B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109536990A (en) * | 2018-10-15 | 2019-03-29 | 华南理工大学 | A kind of flat thin-film electro catalyst operation electrode and its preparation method and application |
| CN111244269A (en) * | 2020-03-12 | 2020-06-05 | 福州大学 | Three-dimensional topological insulator Bi2Te3Method for enhancing photoinduced abnormal Hall current |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5652445A (en) * | 1995-04-21 | 1997-07-29 | Johnson; Mark B. | Hybrid hall effect device and method of operation |
| CN102024904A (en) * | 2010-09-30 | 2011-04-20 | 北京科技大学 | Film material for high-sensitivity metal Hall sensor and preparation method of film material |
| CN104362250A (en) * | 2014-10-14 | 2015-02-18 | 北京工业大学 | Heterojunction with exchange bias effect and electricity resulted resistance change effect and preparation method thereof |
| CN105374932A (en) * | 2015-10-22 | 2016-03-02 | 重庆科技学院 | Structure for regulating and controlling Hall effect by means of polarization direction |
-
2016
- 2016-01-26 CN CN201610053351.8A patent/CN105552216B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5652445A (en) * | 1995-04-21 | 1997-07-29 | Johnson; Mark B. | Hybrid hall effect device and method of operation |
| CN102024904A (en) * | 2010-09-30 | 2011-04-20 | 北京科技大学 | Film material for high-sensitivity metal Hall sensor and preparation method of film material |
| CN104362250A (en) * | 2014-10-14 | 2015-02-18 | 北京工业大学 | Heterojunction with exchange bias effect and electricity resulted resistance change effect and preparation method thereof |
| CN105374932A (en) * | 2015-10-22 | 2016-03-02 | 重庆科技学院 | Structure for regulating and controlling Hall effect by means of polarization direction |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109536990A (en) * | 2018-10-15 | 2019-03-29 | 华南理工大学 | A kind of flat thin-film electro catalyst operation electrode and its preparation method and application |
| CN111244269A (en) * | 2020-03-12 | 2020-06-05 | 福州大学 | Three-dimensional topological insulator Bi2Te3Method for enhancing photoinduced abnormal Hall current |
| CN111244269B (en) * | 2020-03-12 | 2021-11-30 | 福州大学 | Three-dimensional topological insulator Bi2Te3Method for enhancing photoinduced abnormal Hall current |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105552216B (en) | 2018-02-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Xu et al. | Improved dielectric and non-ohmic properties of (Zn+ Zr) codoped CaCu3Ti4O12 thin films | |
| Song et al. | Domain-engineered BiFeO 3 thin-film photoanodes for highly enhanced ferroelectric solar water splitting | |
| CN103839928B (en) | A kind of high pressure, Low dark curient, high polarization intensity bismuth ferrite thin film and preparation method thereof | |
| Zhou et al. | Electrophoretic deposition of multiferroic BaTiO3/CoFe2O4 bilayer films | |
| CN105789432B (en) | A kind of micro-nano magnetoelectric coupling device based on ferroelectric thin film and self assembly magnetic nanoparticle structure | |
| CN101376600A (en) | Stack ferro-electricity /magnetic multiferrou magnetoelectric compound film with conductive oxide as buffer layer and preparation thereof | |
| CN105374932B (en) | A kind of structure for regulating and controlling Hall effect by polarised direction | |
| Su et al. | Hydrothermal and electrophoretic deposition of lead zirconate titanate (PZT) films | |
| Ponzoni et al. | Electrophoretic deposition of multiferroic BiFeO3 sub-micrometric particles from stabilized suspensions | |
| CN110372977A (en) | A kind of ferromagnet composition polymer nano thin-film and preparation method thereof | |
| Hu et al. | The grain size effect of the Pb (Zr0. 45Ti0. 55) O3 thin films deposited on LaNiO3-coated silicon by modified sol–gel process | |
| CN105552216A (en) | Method for strengthening abnormal hall effect | |
| Bochenek et al. | Magnetoelectric and electric measurements of the (1− x) BiFeO3–(x) Pb (Fe1/2Nb1/2) O3 solid solutions | |
| Ren et al. | Electric field control of magnetism in Ti/ZnO/Pt and Ti/ZnO/SRO devices | |
| CN101306948B (en) | Novel ferroelectric-ferromagnetic thick film and method for preparing same | |
| Zhou et al. | Electrophoretic deposition of BaTiO3/CoFe2O4 multiferroic composite films | |
| Zhu et al. | Effect of annealing temperature on the multiferroic properties of 0.7 BiFeO3–0.3 Bi0. 5Na0. 5TiO3 solid solution prepared by sol–gel method | |
| Wang et al. | Dielectric property and energy-storage performance of (100)-preferred (1-x) PbTiO3-xBi (Mg0. 5Ti0. 5) O3 relaxor ferroelectric thin films | |
| Ranieri et al. | Magnetoelectricity at room temperature in the LaFeO 3/BiFeO 3 heterostructures | |
| Yang et al. | Annealing temperature effects on Bi6Fe2Ti3O18/LaNiO3/Si thin films by an all-solution approach | |
| CN105742483B (en) | Low temperature Magnetic Sensor based on carrier regulation and control metal-insulator transition temperature and preparation method thereof | |
| Galizia et al. | Bilayer thick structures based on CoFe2O4/TiO2 composite and niobium-doped PZT obtained by electrophoretic deposition | |
| Yu et al. | Multiferroic 0.7 BiFeO3–0.3 PbTiO3 thin films prepared by a sol–gel method | |
| Liu et al. | Structure and properties of Pb (Lu1/2Nb1/2) O3–0.2 PbTiO3 relaxor ferroelectric crystal | |
| Wang et al. | Influence of Zr/Ti atomic ratio and seed layer on the magnetoelectric coupling of Pb (ZrxTi1− x) O3 film-on-CoFe2O4 bulk ceramic composites |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Address after: No. 8, No. 8 (Zhengzhou campus), the front journey of the Vocational Education Park in Zhengzhou new area, Henan Province Applicant after: Zhengzhou Business College Address before: No. 8, No. 8 (Zhengzhou campus), the front journey of the Vocational Education Park in Zhengzhou new area, Henan Province Applicant before: Institutes Of Technology Of He'nan is technical college incomparably |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant |