CN105552187A - GaN thin film prepared by GaN nano-patterned substrate homoepitaxy and method - Google Patents
GaN thin film prepared by GaN nano-patterned substrate homoepitaxy and method Download PDFInfo
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- CN105552187A CN105552187A CN201510940416.6A CN201510940416A CN105552187A CN 105552187 A CN105552187 A CN 105552187A CN 201510940416 A CN201510940416 A CN 201510940416A CN 105552187 A CN105552187 A CN 105552187A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
Abstract
The invention provides a GaN thin film prepared by GaN nano-patterned substrate homoepitaxy and a method. The GaN thin film prepared by GaN nano-patterned substrate homoepitaxy comprises a substrate material layer, a buffer layer, a GaN thin film layer, a nano-sized homoepitaxy layer and a GaN layer, wherein the buffer layer is fabricated on the substrate material layer; the GaN thin film layer is fabricated on the buffer layer; the nano-sized homoepitaxy layer is fabricated in the upper surface of the GaN thin film layer; and the GaN layer is fabricated on the nano-sized homoepitaxy layer. According to the GaN thin film prepared by GaN nano-patterned substrate homoepitaxy and the method, the quality of a gallium nitride epitaxial thin film can be improved.
Description
Technical field
The invention belongs to field of semiconductor manufacture, particularly one
adopt GaN nanometerfigure
substrate homoepitaxy prepares GaN film and method.
Background technology
Owing to being difficult to obtain large-sized GaN body monocrystal material, up to the present, high-quality GaN material is generally all obtained by foreign substrate epitaxy method.High-quality epitaxial film generally need substrate meet lattice constant match, matched coefficients of thermal expansion, can the principle such as large scale and affordable.Up to now, also do not have a kind of foreign substrate can meet above-mentioned all conditions simultaneously.Commercial LED has three technology paths, i.e. Sapphire Substrate technology path, SiC substrate technology path and Si substrate technology route according to substrate division at present.
Along with the development of information-intensive society, micromachining technology is applied to microelectromechanical systems (MEMS) more and more widely, is especially applied in the manufacturing process of various microsensor.The making of micro-structural is a key technology in micromachining technology, is utilized in the middle of GaN epitaxy technology, and preparation has the substrate of nanostructure and carries out secondary homoepitaxy thereon, can obtain the high-quality GaN film of flawless, low dislocation.
Summary of the invention
The object of the invention is to, provide a kind of
adopt GaN nanometerfigure
substrate homoepitaxy prepares GaN film and method, the quality of epitaxy of gallium nitride film can be improved.
The invention provides a kind of GaN nano graph substrate homoepitaxy that adopts and prepare GaN film, comprising:
One substrate material layer;
One resilient coating, this resilient coating is produced in substrate material layer;
One GaN film layer, it makes on the buffer layer;
One nano-scale homogeneity epitaxial layer, it is produced in GaN film layer upper surface;
One GaN layer, it is produced on nano-scale homogeneity epitaxial layer.
The present invention also provides a kind of GaN nano graph substrate homoepitaxy that adopts to prepare GaN film preparation method, comprises the following steps:
Step 1: get a substrate material layer, cleaning;
Step 2: at substrate material layer Epitaxial growth resilient coating;
Step 3: the layer of epitaxial growth GaN film on the buffer layer;
Step 4: on GaN film layer, utilizes the method corrosion GaN film layer of wet etching, obtains nano-scale homogeneity epitaxial layer, form substrate on GaN film layer;
Step 5: substrate is cleaned;
Step 6: epitaxial growth GaN layer on the upper surface of the substrate, cleaning, completes preparation.
The invention has the beneficial effects as follows:
1. because GaN and heteroepitaxy substrate Si or sapphire or SiC also exist thermal mismatching, in epitaxial process, in change procedure from high temperature to low temperature, two kinds of materials there will be the different effect of dilation dimension, cause there is a certain amount of internal stress in the middle of extension GaN film, this stress can make whole substrate appearance warpage in various degree, and the release of stress can cause the appearance of film crack.The present invention utilizes the method for wet etching to erode away nano-pore structure on an epitaxial loayer, make base part Stress Release and crackle can not be caused, and on the membrane stress of secondary epitaxy can be discharged in interface, thus obtain flawless, the epitaxial film that warpage degree is low.
2., because GaN and heteroepitaxy substrate Si or sapphire or SiC also exist lattice mismatch, outer time delay can occur in a large number along the threading dislocation of extension directional spreding in the middle of epitaxial loayer.Threading dislocation density is higher, and the quality of epitaxial film is poorer.The present invention utilizes the method for wet etching to erode away nano-pore structure on an epitaxial loayer, when secondary epitaxy, GaN can grow along the sidewall of nano-pore, when epitaxial lateral overgrowth film occurs to merge, corresponding transversely truncation can be there is in threading dislocation, only can there is dislocation on sub-fraction hole wall, greatly reduce the density of threading dislocation, obtain high-quality epitaxial film.
Accompanying drawing explanation
For further illustrating technology contents of the present invention, below in conjunction with embodiment and
accompanying drawingbe described in detail as follows, wherein:
fig. 1it is the structural representation of GaN film substrate of the present invention
figure.
fig. 2it is preparation method's flow process of GaN film substrate of the present invention
figure.
Embodiment
Refer to
fig. 1shown in, the invention provides a kind of GaN nano graph substrate homoepitaxy that adopts and prepare GaN film, comprising:
One substrate material layer 10, the material of described substrate material layer 10 is Si or sapphire or SiC, and this substrate material layer 10 is of a size of 2 inches, 4 inches or 8 inches, and thickness is 200-900 μm;
One resilient coating 11, thickness is 100-300nm, material is under high temperature or cryogenic conditions, utilize AlN or AlGaN that MOCVD (metal-organic chemical vapor deposition equipment) or MBE (molecular beam epitaxy) grows, this resilient coating 11 is produced in substrate material layer 10, can eliminate or reduce the dislocation that between substrate and extension GaN film, lattice mismatch causes.
One GaN film layer 12, this layer thickness is 1-3 μm, is produced on resilient coating 11;
One nano-scale homogeneity epitaxial layer 13, it is produced in GaN film layer 12 upper surface;
One GaN layer 14, this layer thickness is 1-2 μm, and thickness is 100-200nm, and its surperficial characteristic size for dense distribution is nano-pore and the nano thread structure of 5-20nm, and hole depth or nanowire length are 100-200nm, and it is produced on nano-scale homogeneity epitaxial layer 13.The structure eroding away nano-pore makes base part Stress Release and can not cause crackle, and on the membrane stress of secondary epitaxy can be discharged in interface, thus obtain flawless, the epitaxial film that warpage degree is low; And when secondary epitaxy, GaN can grow along the sidewall of nano-pore, when epitaxial lateral overgrowth film occurs to merge, corresponding transversely truncation can be there is in threading dislocation, only can there is dislocation on sub-fraction hole wall, greatly reduce the density of threading dislocation, obtain high-quality epitaxial film.
Refer to
fig. 2and
fig. 1shown in, the present invention also provides a kind of GaN of employing graph substrate nanometer homoepitaxy to prepare the preparation method of GaN film, comprises the following steps:
Step 1: get a substrate material layer 10, this layer material is Si or sapphire or SiC, this substrate material layer 10 is of a size of 2 inches, 4 inches or 8 inches, thickness is 200-900 μm, cleaning, cleaning fluid comprises acetone, chloroazotic acid, methyl alcohol, deionized water, substrate is soaked 10-20min under normal temperature successively in above-mentioned solution, finally dries up with nitrogen;
Step 2: utilize MOCVD (metal-organic chemical vapor deposition equipment) epitaxial growth buffer 11 in substrate material layer 10, thickness is 100-300nm;
Step 3: utilize MOCVD (metal-organic chemical vapor deposition equipment) epitaxial growth GaN film layer 12 on resilient coating 11, thickness is 1-3 μm, and growth temperature is 900-1300 DEG C;
Step 4: on GaN film layer 12, utilize the method corrosion GaN film layer 12 of wet etching, nano-scale homogeneity epitaxial layer 13 is obtained on GaN film layer 12, thickness is 100-200nm, its surperficial characteristic size for dense distribution is nano-pore and the nano thread structure of 5-20nm, hole depth or nanowire length are 100-200nm, and corrosive liquid is AgNO
3/ HF, AgNO
3concentration be the concentration of 0.001-0.01M, HF be 1-5M, etching time is 1-10min, forms substrate; Corrosion is carried out under ultraviolet irradiation condition;
Step 5: substrate is cleaned;
Step 6: epitaxial growth GaN layer on the upper surface of the substrate 14, thickness is 1-2 μm; Cleaning, completes preparation.
Above-described specific embodiment, to this
inventionobject, technical scheme and beneficial effect further describe, institute it should be understood that and the foregoing is only this
inventionspecific embodiment, be not limited to this
invention, all at this
inventionspirit and principle within, any amendment made, equivalent replacements, improvement etc., all should be included in
inventionprotection range within.
Claims (10)
1. adopt GaN nano graph substrate homoepitaxy to prepare a GaN film, comprising:
One substrate material layer;
One resilient coating, this resilient coating is produced in substrate material layer;
One GaN film layer, it makes on the buffer layer;
One nano-scale homogeneity epitaxial layer, it is produced in GaN film layer upper surface;
One GaN layer, it is produced on nano-scale homogeneity epitaxial layer.
2. employing GaN nano graph substrate homoepitaxy according to claim 1 prepares GaN film, the material of wherein said substrate material layer is Si or sapphire or SiC, this substrate material layer is of a size of 2 inches, 4 inches or 8 inches, and thickness is 200-900 μm.
3. employing GaN nano graph substrate homoepitaxy according to claim 1 prepares GaN film, and the thickness of wherein said GaN film layer is 1-3 μm; The thickness of described GaN layer is 1-2 μm.
4. employing GaN nano graph substrate homoepitaxy according to claim 1 prepares GaN film, and wherein the thickness of resilient coating is 100-300nm.
5. employing GaN nano graph substrate homoepitaxy according to claim 1 prepares GaN film, wherein the thickness of nano-scale homogeneity epitaxial layer is 100-200nm, its surperficial characteristic size for dense distribution is nano-pore and the nano thread structure of 5-20nm, and hole depth or nanowire length are 100-200nm.
6. adopt GaN nano graph substrate homoepitaxy to prepare a GaN film preparation method, comprise the following steps:
Step 1: get a substrate material layer, cleaning;
Step 2: at substrate material layer Epitaxial growth resilient coating;
Step 3: the layer of epitaxial growth GaN film on the buffer layer;
Step 4: on GaN film layer, utilizes the method corrosion GaN film layer of wet etching, obtains nano-scale homogeneity epitaxial layer, form substrate on GaN film layer;
Step 5: substrate is cleaned;
Step 6: epitaxial growth GaN layer on the upper surface of the substrate, cleaning, completes preparation.
7. employing GaN nano graph substrate homoepitaxy according to claim 6 prepares the method for GaN film, the material of wherein said substrate material layer is Si or sapphire or SiC, this substrate material layer is of a size of 2 inches, 4 inches or 8 inches, and thickness is 200-900 μm.
8. employing GaN nano graph substrate homoepitaxy according to claim 6 prepares the method for GaN film, and wherein the thickness of epitaxially grown GaN film layer is 1-3 μm, and growth temperature is 900-1300 DEG C; The thickness of described GaN layer is 1-2 μm; The thickness of this resilient coating is 100-300nm.
9. employing GaN nano graph substrate homoepitaxy according to claim 6 prepares the method for GaN film, the thickness wherein corroding the nano-scale homogeneity epitaxial layer obtained is 100-200nm, its surperficial characteristic size for dense distribution is nano-pore and the nano thread structure of 5-20nm, hole depth or nanowire length are 100-200nm, and corrosive liquid is AgNO
3/ HF, AgNO
3concentration be the concentration of 0.001-0.01M, HF be 1-5M, etching time is 1-10min.
10. employing GaN nano graph substrate homoepitaxy according to claim 6 prepares the method for GaN film, the cleaning fluid wherein cleaned comprises acetone, chloroazotic acid, methyl alcohol or deionized water, substrate is soaked 10-20min under normal temperature successively in above-mentioned solution, finally dries up with nitrogen.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106229396A (en) * | 2016-08-29 | 2016-12-14 | 中国科学院半导体研究所 | A kind of group III-nitride bioprobe and preparation method thereof |
| CN114134565A (en) * | 2021-11-10 | 2022-03-04 | 江苏华兴激光科技有限公司 | Method for preparing InP film based on GaAs substrate |
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Cited By (2)
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