CN105552040A - Corner constant-current diode - Google Patents
Corner constant-current diode Download PDFInfo
- Publication number
- CN105552040A CN105552040A CN201610075439.XA CN201610075439A CN105552040A CN 105552040 A CN105552040 A CN 105552040A CN 201610075439 A CN201610075439 A CN 201610075439A CN 105552040 A CN105552040 A CN 105552040A
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- China
- Prior art keywords
- lead
- bent angle
- wire
- shell
- alloy electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thermistors And Varistors (AREA)
Abstract
The invention discloses a corner constant-current diode, which comprises an alloy electrode, silicon crystal, a soldering layer, a housing, a bracket and a corner lead, wherein the other surface of the soldering layer is arranged at the bottom part of the silicon crystal; the soldering layer is arranged on the bracket; the structure is coated with the housing; the alloy electrode is arranged at the top part of the housing; the corner lead is divided into two corner leads; one corner lead is arranged on the alloy electrode; and the other corner lead is arranged at the bottom part of the housing. The corner constant-current diode disclosed by the invention is simple in structure, can effectively save the cost, and can greatly reduce manpower in a support process.
Description
Technical field
The present invention relates to diode field, particularly a kind of bent angle current regulator diode.
Background technology
Current regulator diode is the semiconductor constant current device come out in recent years, is the base electronic components and parts with voltage stabilizing didoe phase antithesis.It can export constant electric current in very wide voltage range, and has very high motional impedance.Because its constant current performance is good, price is lower, easy to use, be therefore widely used in the protective circuit of constant-current source, source of stable pressure, amplifier and electronic instrument at present.Manufacture current regulator diode in the market mostly to adopt manually, cause its cost to appoint so very high.
Summary of the invention
It is simple that technical problem to be solved by this invention is to provide its structure a kind of, can be effectively cost-saving, significantly can reduce and use artificial bent angle current regulator diode, to solve the above-mentioned multinomial defect caused in prior art in bearing process.
For achieving the above object, the invention provides following technical scheme: a kind of bent angle current regulator diode, comprise alloy electrode, silicon crystal, soldering-tin layer, shell, support and bent angle lead-in wire, soldering-tin layer is arranged on the bottom of silicon crystal, and soldering-tin layer another side is arranged on support, and above encapsulated by structures is in the inside of shell, alloy electrode is arranged on the top of shell, bent angle lead-in wire is divided into two, and one is arranged on alloy electrode, and another root is arranged on the bottom of shell.
Preferably, described silicon crystal surface is provided with dielectric film.
Preferably, described shell is provided with colour circle.
Preferably, the shape of described alloy electrode is reeded spherical for being with.
Preferably, described bent angle lead-in wire, comprise lead-in wire and contact point, contact point is round pie, and three contact points are equidistantly arranged on the end of lead-in wire.
The beneficial effect of above technical scheme is adopted to be: the bent angle current regulator diode of structure of the present invention, its structure is simple, can be effectively cost-saving, significantly can reduce in bearing process and use manually, described silicon crystal surface is provided with dielectric film, the phenomenon that can effectively prevent silicon crystal from leaking electricity like this occurs, described shell is provided with colour circle, this colour circle is by imitating resistance, the physical message of diode can be carried out the effective means expressed, the shape of described alloy electrode is reeded spherical for being with, groove can avoid on the one hand silicon face impurity to produce free state under high temperature high heat again, affect the withstand voltage of Schottky and electric leakage, the interior heat radiation of silicon is more even simultaneously, more be conducive to the diffusion of temperature, on the other hand can be more stable fix lead-in wire, described bent angle lead-in wire, comprise lead-in wire and contact point, contact point is round pie, three contact points are equidistantly arranged on the end of lead-in wire, common bent angle lead-in wire is only leaded, the present invention sets up the fixing site that contact point can provide diode like this on lead-in wire, diode is installed and used more convenient.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention.
Fig. 2 is the structural representation of the lead-in wire of bent angle shown in Fig. 1.
Wherein, 1---alloy electrode, 2---silicon crystal, 3---soldering-tin layer, 4---shell, 5---support, 6---bent angle goes between, and 7---lead-in wire, 8---contact point, 9---colour circle.
Embodiment
The preferred embodiment of the present invention is described in detail below in conjunction with accompanying drawing.
Fig. 1 and Fig. 2 shows the specific embodiment of the present invention: a kind of bent angle current regulator diode, comprise alloy electrode 1, silicon crystal 2, soldering-tin layer 3, shell 4, support 5 and bent angle lead-in wire 6, soldering-tin layer 3 is arranged on the bottom of silicon crystal 2, soldering-tin layer 3 another side is arranged on support 5, above encapsulated by structures is in the inside of shell 4, and alloy electrode 1 is arranged on the top of shell 4, and bent angle lead-in wire 6 is divided into two, one is arranged on alloy electrode 1, and another root is arranged on the bottom of shell 4.
Bent angle lead-in wire 6 shown in composition graphs 2, comprise lead-in wire 7 and contact point 8, contact point 8 is round pie, and three contact points 8 are equidistantly arranged on the end of lead-in wire 7.
The beneficial effect of above technical scheme is adopted to be: the bent angle current regulator diode of structure of the present invention, its structure is simple, can be effectively cost-saving, significantly can reduce in bearing process and use manually, described silicon crystal surface is provided with dielectric film, the phenomenon that can effectively prevent silicon crystal from leaking electricity like this occurs, described shell is provided with colour circle, this colour circle is by imitating resistance, the physical message of diode can be carried out the effective means expressed, the shape of described alloy electrode is reeded spherical for being with, groove can avoid on the one hand silicon face impurity to produce free state under high temperature high heat again, affect the withstand voltage of Schottky and electric leakage, the interior heat radiation of silicon is more even simultaneously, more be conducive to the diffusion of temperature, on the other hand can be more stable fix lead-in wire, described bent angle lead-in wire, comprise lead-in wire and contact point, contact point is round pie, three contact points are equidistantly arranged on the end of lead-in wire, common bent angle lead-in wire is only leaded, the present invention sets up the fixing site that contact point can provide diode like this on lead-in wire, diode is installed and used more convenient.
Above-described is only the preferred embodiment of the present invention, it should be pointed out that for the person of ordinary skill of the art, and without departing from the concept of the premise of the invention, can also make some distortion and improvement, these all belong to protection scope of the present invention.
Claims (5)
1. a bent angle current regulator diode, it is characterized in that: comprise alloy electrode, silicon crystal, soldering-tin layer, shell, support and bent angle lead-in wire, soldering-tin layer another side is arranged on the bottom of silicon crystal, soldering-tin layer is arranged on support, above encapsulated by structures is in the inside of shell, and alloy electrode is arranged on the top of shell, and bent angle lead-in wire is divided into two, one is arranged on alloy electrode, and another root is arranged on the bottom of shell.
2. bent angle current regulator diode according to claim 1, is characterized in that: described silicon crystal surface is provided with dielectric film.
3. bent angle current regulator diode according to claim 1, is characterized in that: described shell is provided with colour circle.
4. bent angle current regulator diode according to claim 1, is characterized in that: the shape of described alloy electrode is reeded spherical for being with.
5. bent angle current regulator diode according to claim 1, is characterized in that: described bent angle lead-in wire, comprise lead-in wire and contact point, contact point is round pie, and three contact points are equidistantly arranged on the end of lead-in wire.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610075439.XA CN105552040A (en) | 2016-02-03 | 2016-02-03 | Corner constant-current diode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610075439.XA CN105552040A (en) | 2016-02-03 | 2016-02-03 | Corner constant-current diode |
Publications (1)
Publication Number | Publication Date |
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CN105552040A true CN105552040A (en) | 2016-05-04 |
Family
ID=55831139
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610075439.XA Pending CN105552040A (en) | 2016-02-03 | 2016-02-03 | Corner constant-current diode |
Country Status (1)
Country | Link |
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CN (1) | CN105552040A (en) |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2918396A (en) * | 1957-08-16 | 1959-12-22 | Gen Electric | Silicon carbide semiconductor devices and method of preparation thereof |
JPH07153898A (en) * | 1993-12-01 | 1995-06-16 | Hitachi Ltd | Semiconductor device |
JPH11260984A (en) * | 1998-03-10 | 1999-09-24 | Miyagi Oki Denki Kk | Comb-like device, solder dust removing method and mechanism, handler socket, lead bend correcting mechanism and lead bend correcting method |
CN2916929Y (en) * | 2006-05-12 | 2007-06-27 | 敦南科技股份有限公司 | Surface adhered component structure |
CN202405249U (en) * | 2011-12-26 | 2012-08-29 | 常州福达电子有限公司 | Silicon plastic package voltage stabilizing diode |
CN203774336U (en) * | 2013-12-10 | 2014-08-13 | 上海空间电源研究所 | Encapsulation structure of surface-mounted thin high-reliable isolation diode assembly |
CN204834632U (en) * | 2015-08-07 | 2015-12-02 | 南通明芯微电子有限公司 | Point -contact type rectifier diode |
-
2016
- 2016-02-03 CN CN201610075439.XA patent/CN105552040A/en active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2918396A (en) * | 1957-08-16 | 1959-12-22 | Gen Electric | Silicon carbide semiconductor devices and method of preparation thereof |
JPH07153898A (en) * | 1993-12-01 | 1995-06-16 | Hitachi Ltd | Semiconductor device |
JPH11260984A (en) * | 1998-03-10 | 1999-09-24 | Miyagi Oki Denki Kk | Comb-like device, solder dust removing method and mechanism, handler socket, lead bend correcting mechanism and lead bend correcting method |
CN2916929Y (en) * | 2006-05-12 | 2007-06-27 | 敦南科技股份有限公司 | Surface adhered component structure |
CN202405249U (en) * | 2011-12-26 | 2012-08-29 | 常州福达电子有限公司 | Silicon plastic package voltage stabilizing diode |
CN203774336U (en) * | 2013-12-10 | 2014-08-13 | 上海空间电源研究所 | Encapsulation structure of surface-mounted thin high-reliable isolation diode assembly |
CN204834632U (en) * | 2015-08-07 | 2015-12-02 | 南通明芯微电子有限公司 | Point -contact type rectifier diode |
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Application publication date: 20160504 |