CN105548290A - Video monitoring device based on rapid responses to humidity changes - Google Patents
Video monitoring device based on rapid responses to humidity changes Download PDFInfo
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- CN105548290A CN105548290A CN201610023417.9A CN201610023417A CN105548290A CN 105548290 A CN105548290 A CN 105548290A CN 201610023417 A CN201610023417 A CN 201610023417A CN 105548290 A CN105548290 A CN 105548290A
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- G—PHYSICS
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/22—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance
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- G—PHYSICS
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/22—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance
- G01N27/223—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance for determining moisture content, e.g. humidity
- G01N27/225—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance for determining moisture content, e.g. humidity by using hygroscopic materials
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- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
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Abstract
The invention discloses a video monitoring device based on rapid responses to humidity changes. A humidity-sensitive sensor module is arranged outside the video monitoring device, and therefore the humidity changes in the surrounding can be detected when the video monitoring device is used, and the video monitoring device is well protected. The humidity-sensitive sensor module is high in response speed, high in flexibility and good in test repeatability, generates an unexpected technical effect, and has greatly market application prospects.
Description
Technical field
The invention belongs to field of video monitoring, more specifically relate to a kind of video monitoring equipment based on response humidity change fast.
Background technology
Video monitoring is the important component part of security system, mainly comprises front-end camera, transmission cable, video monitoring platform etc.In recent years, along with the fast development of computing machine, network and image procossing, transmission technology, Video Supervision Technique there has also been significant progress.
But in existing video monitoring equipment, generally there is not the ability detected its ambient humidity, in use, its surrounding enviroment there will be the larger situation of humidity unavoidably, and severe patient can cause equipment corrosion, fault etc., easily cause equipment property loss.
Summary of the invention
The present invention is directed to background technology Problems existing, a kind of video monitoring equipment based on response humidity change is fast provided.
Object of the present invention is achieved through the following technical solutions:
A kind of video monitoring equipment based on response humidity change fast, it is characterized in that, the outside of described video monitoring equipment is provided with moisture sensor module, and this moisture sensor module comprises the heavy doping silicon chip laid successively from top to bottom, the SiO being close to heavy doping silicon chip
2layer, carbon nanotube layer, be positioned at SiO
2bottom electrode and the top electrode be positioned on carbon nanotube layer of interlayer, described carbon nanotube layer is grown on SiO
2on layer; Described bottom electrode has metallic film, and described metallic film is followed successively by from inside to outside has the Cr layer of adhesion, the Cu layer of conductive and heat-conductive and the Au layer as electrode layer, and the thickness of described Cr layer, Cu layer and Au layer is followed successively by 60nm, 200nm and 500nm; Described carbon nanotube layer adopts catalyzer and/or photoetching process to realize the growth of its localization, described carbon nanotube layer using plasma after growth makes it produce hydroxyl modified, and carbon nanotube layer have passed through and adds the acetic acid of micro-tungsten powder and the process of hydrogen peroxide mixed solution before plasma hydroxyl modified; The surface of described metallic film is glued with the bacterial enzyme rete of sensing bacterial growth, and this bacterial enzyme rete forms the bacterium wet sensitive sensor of sensing moisture together with metallic film; Described bottom electrode with top electrode is connected with a micro-control processor for being connected with client communication.
Preferably, the making of described moisture sensor comprises the following steps:
S1:SiO
2layer makes: get described heavy doping silicon chip, put it in tubular furnace, and according to the ramp of 10 DEG C/min to 500 DEG C, insulation 12h, then naturally cools to room temperature, can form SiO at heavy doping silicon chip surface
2layer;
S2: bottom electrode makes: have SiO by what obtain in step S1
2the heavy doping silicon chip of layer uses acetone, ethanol, washed with de-ionized water 15min post-drying successively, at its surperficial spin coating photoresist, uses bottom electrode mask to expose it, and development after 120 DEG C of oven dry 2min, oven dry, at CHF
3dry etching SiO under atmosphere
2layer, etching 30min, will etch SiO
2heavy doping silicon chip after layer cleaning puts into magnetic control sputtering device, lower than 1.5 × 10
-3magnetron sputtering C r layer, Cu layer and Au layer successively under pa vacuum; By fixing for the bottom electrode (1) of good for magnetron sputtering Cr layer, Cu layer and Au layer surface upper bacterium enzyme membrane, then cleaning photoetching glue; The size of described heavy doping silicon chip is 2cm × 2cm;
S3: gas blowout catalyst film, step is as follows:
A. use Fe/Ni nano particle as the catalyzer of carbon nano tube growth, first, to the heavy doping silicon chip spin coating photoresist with bottom electrode, adopt the localization mask of catalyzer to expose it, then through development, clean for subsequent use;
B. the dispersion liquid of catalyst Fe/Ni is prepared: the Fe nano particle and the Ni nano particle that take 200mg, 50mg respectively, added the 98%H of 60ml
2sO
4with 69% of 40ml HNO
3in mixed solution, in 80 DEG C of water-baths, ultrasonic 3h, then filters with after washed with de-ionized water, obtain dry Fe/Ni mix nanoparticles, then take the Fe/Ni nano particle of 100mg, add in the deionized water of 500ml, after fully stirring, obtain the dispersion liquid of Fe/Ni mix nanoparticles;
C. use high pure nitrogen as gas blowout carrier, regulate the horizontal and vertical distance between airbrush and heavy doping silicon chip, just volatilize when the solvent of dispersion liquid is arrived on substrate and be as the criterion, gas blowout 5 times, each gas blowout 20s, makes the uniform thickness of formation one deck be about the mix nanoparticles film of the catalyst Fe/Ni of 20nm;
S4:CVD method carbon nano-tube:
Carbon nano-tube reactant gas source is CH
4and H
2mixed gas, first the heavy doping silicon chip with patterned catalyst particle is cleaned, remove photoresist, put into reaction chamber; Then vacuumize, after reaching vacuum requirement, pass into hydrogen, apply microwave and make to produce plasma in reflection chamber; Heated substrate makes it reach certain temperature and keep 40min, passes into methane gas, and now carbon nano-tube starts growth; In growth course lumen, vacuum tightness remains unchanged; Through about 10min, close microwave source and radio heater, stop passing into methane gas, close hydrogen, pass into argon gas, take out the substrate of heavy doping silicon chip, obtain the carbon nano-tube of patterning;
S5: Surface Modification of Carbon Nanotube By Plasma:
A. first the hydrogen peroxide of 60% acetic acid of 40ml and 10% of 20ml is put into beaker, fully mix, add micro-tungsten powder wherein, then have the substrate of the heavy doping silicon chip of Patterned Carbon Nanotube to put into growth, leave standstill 2h;
B. there is the substrate of the heavy doping silicon chip of carbon nano-tube to send in plasma generator growth, be evacuated to 1.0 × 10
-1below pa, then with inert gas N
2for carrier gas, by reactant ammoniacal liquor with N
2air-flow is brought in instrument, makes air-flow velocity be stabilized in 20mL/min, waits for 1h, open power source, be adjusted to 50W, in instrument, produce aura, under action of plasma, gas molecule valence link is destroyed, and great amount of hydroxy group produces, carbon nano-tube in the environment of acetic acid and hydrogen peroxide through the effect of tungsten powder, carbon nano-tube is by the hydroxyl modified produced, after Cement Composite Treated by Plasma 30min, close power source, take out substrate;
S6: prepare top electrode: by the heavy doping silicon chip ozone clean 20min obtained in step S1 ~ S5, covers the ceramic mask of top electrode, then heavy doping silicon chip is put into magnetic control sputtering device, lower than 1.5 × 10
-3under pa vacuum, sputtering has the top electrode of Au layer, and wherein, the thickness of Au layer is about 200nm;
S7: welding encapsulation: with lead-in wire, top electrode is connected with bottom electrode respectively, described moisture sensor is encapsulated, and digital electric bridge is welded with carbon nano-tube capacity type wet dependent sensor, digital electric bridge is used for reading in the capacitance variations of moisture sensor under humidity changing environment, demarcates water vapor concentration with this.
Preferably, in step S2, the parameter of spin coating photoresist is arranged as follows: low speed 900rpm, 15s; High speed 3500rpm, 50s.
Usefulness of the present invention is:
(1) what embodiments of the invention provided is a kind of based on the quick video monitoring equipment responding humidity change, the outer setting of its video monitoring equipment has moisture sensor, this moisture sensor is capacity type wet dependent sensor, and bottom electrode and heavy doping silicon chip, top electrode and carbon nano-tube all form Ohmic contact; Bottom electrode is connected with silicon chip and forms two pole plates of electric capacity with top electrode, SiO
2layer and carbon nano-tube are the medium between electric capacity, when residing for device, ambient humidity changes, water vapour molecule and carbon nano-tube interact, and cause the change in electrical properties of carbon nano-tube, the i.e. change in dielectric constant of electric capacity, therefore from Output rusults can monitoring of environmental humidity change.And this moisture sensor is highly sensitive, and the response time is short, manufacturing process is simple, and the repeatability of experimental technique is high, is easy to batch production.
(2) what embodiments of the invention provided is a kind of based on the quick video monitoring equipment responding humidity change, the moisture sensor adopted, Cement Composite Treated by Plasma is carried out to the carbon nano-tube after growth, make carbon nano tube modified upper oh group, because it is to hydrone strong interaction, promote that carbon nano-tube is to the suction-operated of water vapor, and then increase the wet sensitive performance of carbon nano-tube, and be glued with the bacterial enzyme rete of sensing bacterial growth on its electrode, this bacterial enzyme rete forms the bacterium wet sensitive sensor of sensing moisture together with metallic film; This bacterium enzyme membrane, can dual sensing humidity by sensing bacterial growth amount and then sensitive context humidity, solves the problem of conventional wet dependent sensor hydraulic performance decline after metallic film Long-Time Service.
(3) what embodiments of the invention provided is a kind of based on the quick video monitoring equipment responding humidity change, the Electrode connection of the moisture sensor adopted has a micro-control processor, for connecting mobile client, user can check humidity condition by client.
Accompanying drawing explanation
The invention will be further described to utilize accompanying drawing, but the embodiment in accompanying drawing does not form any limitation of the invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, can also obtain other accompanying drawing according to the following drawings.
Fig. 1 is schematic diagram of the present invention.
The humidity sensor structural representation that Fig. 2 provides for embodiments of the invention.
Embodiment
Carbon nano-tube is a kind of allotrope of carbon, and its structure is: radial dimension is nanometer scale, and axial dimension is micron dimension, and pipe two ends are all sealed substantially.It is the body of the seamless hollow that the close heap graphite flake layer of hexagonal formed by carbon atom is rolled into, and is a kind of accurate One-dimensional Quantum material.Curling and become Single Walled Carbon Nanotube (SWNT) by one deck graphite, multi-walled carbon nano-tubes (MWNT) is made up of the coaxial pipe of several layers to tens of layers.Carbon nano-tube has good mechanical property, and its tensile strength is 100 times of steel, has good pliability, and hardness is suitable with adamas, is desirable high tensile strength fibrous material.Carbon nano-tube generally adopts arc discharge, laser evaporation and chemical vapor deposition growth method.Research shows, carbon nano-tube has demonstrated the response to gases such as water vapor, ammonia, nitrogen dioxide, hydrogen, methane, sulphuric dioxide, sulfuretted hydrogen and oxygen.
Containing steam or the how many physical quantity of hydrone in humidity describe environment, humidity-sensitive element refer to have that ambient humidity maybe can be converted to by response to ambient humidity accordingly can the element of measuring-signal (such as resistance, electric capacity, frequency etc.).Humidity sensor is converted to the device of electric signal ambient humidity, and it has a wide range of applications in fields such as industrial and agricultural production, environment measuring, household electrical appliance, meteorology, Engineering Control.The core of humidity sensor is humidity-sensitive material, and it utilizes the hydrone in the direct adsorb atmospheric of adsorption effect, and the electrology characteristic etc. of material is changed, thus detects the change of humidity.Carbon nano-tube has very large specific surface area, and has very strong interaction between the medium of surrounding, therefore very responsive to humidity of external environment condition etc., has obvious Unordered system.
Carbon nano-tube capacitance type sensor mainly through dielectric layer constant change so that cause measurable capacitance variations to detect gas to be measured.
In conjunction with legend the present invention made and further illustrating:
Fig. 1 is schematic diagram of the present invention.10 is video monitoring equipment of the present invention, and 20 for being arranged on the moisture sensor module of video monitoring equipment outside.
The humidity sensor structural representation that Fig. 2 provides for embodiments of the invention.Wherein: 1-heavy doping silicon chip, 2-SiO
2layer, 3-bottom electrode, 4-carbon nano-tube, 5-top electrode.
5 embodiments are provided to be described further described moisture sensor module below:
Embodiment 1
Based on a video monitoring equipment for response humidity change fast, the outside of described video monitoring equipment is provided with moisture sensor module, and this moisture sensor module comprises the heavy doping silicon chip laid successively from top to bottom, the SiO being close to heavy doping silicon chip
2layer, carbon nanotube layer, be positioned at SiO
2bottom electrode and the top electrode be positioned on carbon nanotube layer of interlayer, described carbon nanotube layer is grown on SiO
2on layer; Described bottom electrode has metallic film, and described metallic film is followed successively by from inside to outside has the Cr layer of adhesion, the Cu layer of conductive and heat-conductive and the Au layer as electrode layer, and the thickness of described Cr layer, Cu layer and Au layer is followed successively by 60nm, 200nm and 500nm; Described carbon nanotube layer adopts catalyzer and/or photoetching process to realize the growth of its localization, described carbon nanotube layer using plasma after growth makes it produce hydroxyl modified, and carbon nanotube layer have passed through and adds the acetic acid of micro-tungsten powder and the process of hydrogen peroxide mixed solution before plasma hydroxyl modified; The surface of described metallic film is glued with the bacterial enzyme rete of sensing bacterial growth, and this bacterial enzyme rete forms the bacterium wet sensitive sensor of sensing moisture together with metallic film; Described bottom electrode with top electrode is connected with a micro-control processor for being connected with client communication.
Further, the making of described moisture sensor comprises the following steps:
S1:SiO
2layer makes: get described heavy doping silicon chip, put it in tubular furnace, and according to the ramp of 10 DEG C/min to 500 DEG C, insulation 12h, then naturally cools to room temperature, can form SiO at heavy doping silicon chip surface
2layer;
S2: bottom electrode makes: have SiO by what obtain in step S1
2the heavy doping silicon chip of layer uses acetone, ethanol, washed with de-ionized water 15min post-drying, successively at its surperficial spin coating photoresist (low speed 900rpm, 15s; High speed 3500rpm, 50s), use bottom electrode mask to expose it, development after 120 DEG C of oven dry 2min, oven dry, at CHF
3dry etching SiO under atmosphere
2layer, etching 30min, will etch SiO
2heavy doping silicon chip after layer cleaning puts into magnetic control sputtering device, lower than 1.5 × 10
-3magnetron sputtering C r layer, Cu layer and Au layer successively under pa vacuum; By fixing for the bottom electrode (1) of good for magnetron sputtering Cr layer, Cu layer and Au layer surface upper bacterium enzyme membrane, then cleaning photoetching glue; The size of described heavy doping silicon chip is 2cm × 2cm;
S3: gas blowout catalyst film, step is as follows:
A. use Fe/Ni nano particle as the catalyzer of carbon nano tube growth, first, to the heavy doping silicon chip spin coating photoresist with bottom electrode, adopt the localization mask of catalyzer to expose it, then through development, clean for subsequent use;
B. the dispersion liquid of catalyst Fe/Ni is prepared: the Fe nano particle and the Ni nano particle that take 200mg, 50mg respectively, added the 98%H of 60ml
2sO
4with 69% of 40ml HNO
3in mixed solution, in 80 DEG C of water-baths, ultrasonic 3h, then filters with after washed with de-ionized water, obtain dry Fe/Ni mix nanoparticles, then take the Fe/Ni nano particle of 100mg, add in the deionized water of 500ml, after fully stirring, obtain the dispersion liquid of Fe/Ni mix nanoparticles;
C. use high pure nitrogen as gas blowout carrier, regulate the horizontal and vertical distance between airbrush and heavy doping silicon chip, just volatilize when the solvent of dispersion liquid is arrived on substrate and be as the criterion, gas blowout 5 times, each gas blowout 20s, makes the uniform thickness of formation one deck be about the mix nanoparticles film of the catalyst Fe/Ni of 20nm;
S4:CVD method carbon nano-tube:
Carbon nano-tube reactant gas source is CH
4and H
2mixed gas, first the heavy doping silicon chip with patterned catalyst particle is cleaned, remove photoresist, put into reaction chamber; Then vacuumize, after reaching vacuum requirement, pass into hydrogen, apply microwave and make to produce plasma in reflection chamber; Heated substrate makes it reach certain temperature and keep 40min, passes into methane gas, and now carbon nano-tube starts growth; In growth course lumen, vacuum tightness remains unchanged; Through about 10min, close microwave source and radio heater, stop passing into methane gas, close hydrogen, pass into argon gas, take out the substrate of heavy doping silicon chip, obtain the carbon nano-tube of patterning;
S5: Surface Modification of Carbon Nanotube By Plasma:
A. first the hydrogen peroxide of 60% acetic acid of 40ml and 10% of 20ml is put into beaker, fully mix, add micro-tungsten powder wherein, then have the substrate of the heavy doping silicon chip of Patterned Carbon Nanotube to put into growth, leave standstill 2h;
B. there is the substrate of the heavy doping silicon chip of carbon nano-tube to send in plasma generator growth, be evacuated to 1.0 × 10
-1below pa, then with inert gas N
2for carrier gas, by reactant ammoniacal liquor with N
2air-flow is brought in instrument, makes air-flow velocity be stabilized in 20mL/min, waits for 1h, open power source, be adjusted to 50W, in instrument, produce aura, under action of plasma, gas molecule valence link is destroyed, and great amount of hydroxy group produces, carbon nano-tube in the environment of acetic acid and hydrogen peroxide through the effect of tungsten powder, carbon nano-tube is by the hydroxyl modified produced, after Cement Composite Treated by Plasma 30min, close power source, take out substrate;
S6: prepare top electrode: by the heavy doping silicon chip ozone clean 20min obtained in step S1 ~ S5, covers the ceramic mask of top electrode, then heavy doping silicon chip is put into magnetic control sputtering device, lower than 1.5 × 10
-3under pa vacuum, sputtering has the top electrode of Au layer, and wherein, the thickness of Au layer is about 200nm;
S7: welding encapsulation: with lead-in wire, top electrode is connected with bottom electrode respectively, described moisture sensor is encapsulated, and digital electric bridge is welded with carbon nano-tube capacity type wet dependent sensor, digital electric bridge is used for reading in the capacitance variations of moisture sensor under humidity changing environment, demarcates water vapor concentration with this.
Test data: carbon nano-tube capacity type wet dependent sensor is placed on a metal sealing chamber (1m
3) in, metal sealing chamber is with air intake opening and gas outlet.During test, digital electric bridge output frequency is 50Hz, and probe temperature is 20 DEG C, and then controlling relative humidity variations scope is 5% ~ 95%, reads capacitance with humidity situation of change;
The sensitivity definition of this carbon nano-tube capacity type wet dependent sensor is: ︱ C
rH-C
11︱/C
11× 100%, wherein C
rHfor the sensor electrical capacitance obtained under test environment humidity, C
11for the capacitance of relative humidity 11% lower sensor.The response of this carbon nano-tube capacity type wet dependent sensor or be defined as testing capacitor value release time and reach total variation 80% time used at the variable quantity of 11%RH to 75%RH;
Test finds, under the relative humidity of 95%, sensitivity is up to 3626, and optimal response and release time are respectively 6s and 13s, and through 2000 repeated tests, the pad value of its electric capacity is less than 10%.The electric capacity of the carbon nano-tube capacitance type sensor of this video monitoring equipment is good with envionmental humidity linear change, highly sensitive, fast response time, good stability.
Embodiment 2
Based on a video monitoring equipment for response humidity change fast, the outside of described video monitoring equipment is provided with moisture sensor module, and this moisture sensor module comprises the heavy doping silicon chip laid successively from top to bottom, the SiO being close to heavy doping silicon chip
2layer, carbon nanotube layer, be positioned at SiO
2bottom electrode and the top electrode be positioned on carbon nanotube layer of interlayer, described carbon nanotube layer is grown on SiO
2on layer; Described bottom electrode has metallic film, and described metallic film is followed successively by from inside to outside has the Cr layer of adhesion, the Cu layer of conductive and heat-conductive and the Au layer as electrode layer, and the thickness of described Cr layer, Cu layer and Au layer is followed successively by 70nm, 90nm and 500nm; Described carbon nanotube layer adopts catalyzer and/or photoetching process to realize the growth of its localization, described carbon nanotube layer using plasma after growth makes it produce hydroxyl modified, and carbon nanotube layer have passed through and adds the acetic acid of micro-tungsten powder and the process of hydrogen peroxide mixed solution before plasma hydroxyl modified; The surface of described metallic film is glued with the bacterial enzyme rete of sensing bacterial growth, and this bacterial enzyme rete forms the bacterium wet sensitive sensor of sensing moisture together with metallic film; Described bottom electrode with top electrode is connected with a micro-control processor for being connected with client communication.
Further, the making of described moisture sensor comprises the following steps:
S1:SiO
2layer makes: get described heavy doping silicon chip, put it in tubular furnace, and according to the ramp of 10 DEG C/min to 500 DEG C, insulation 12h, then naturally cools to room temperature, can form SiO at heavy doping silicon chip surface
2layer;
S2: bottom electrode makes: have SiO by what obtain in step S1
2the heavy doping silicon chip of layer uses acetone, ethanol, washed with de-ionized water 15min post-drying, successively at its surperficial spin coating photoresist (low speed 900rpm, 15s; High speed 3500rpm, 50s), use bottom electrode mask to expose it, development after 120 DEG C of oven dry 2min, oven dry, at CHF
3dry etching SiO under atmosphere
2layer, etching 30min, will etch SiO
2heavy doping silicon chip after layer cleaning puts into magnetic control sputtering device, lower than 1.5 × 10
-3magnetron sputtering C r layer, Cu layer and Au layer successively under pa vacuum; By fixing for the bottom electrode (1) of good for magnetron sputtering Cr layer, Cu layer and Au layer surface upper bacterium enzyme membrane, then cleaning photoetching glue; The size of described heavy doping silicon chip is 2cm × 2cm;
S3: gas blowout catalyst film, step is as follows:
A. use Fe/Ni nano particle as the catalyzer of carbon nano tube growth, first, to the heavy doping silicon chip spin coating photoresist with bottom electrode, adopt the localization mask of catalyzer to expose it, then through development, clean for subsequent use;
B. the dispersion liquid of catalyst Fe/Ni is prepared: the Fe nano particle and the Ni nano particle that take 100mg, 50mg respectively, added the 98%H of 60ml
2sO
4with 69% of 40ml HNO
3in mixed solution, in 80 DEG C of water-baths, ultrasonic 3h, then filters with after washed with de-ionized water, obtain dry Fe/Ni mix nanoparticles, then take the Fe/Ni nano particle of 100mg, add in the deionized water of 500ml, after fully stirring, obtain the dispersion liquid of Fe/Ni mix nanoparticles;
C. use high pure nitrogen as gas blowout carrier, regulate the horizontal and vertical distance between airbrush and heavy doping silicon chip, just volatilize when the solvent of dispersion liquid is arrived on substrate and be as the criterion, gas blowout 5 times, each gas blowout 20s, makes the uniform thickness of formation one deck be about the mix nanoparticles film of the catalyst Fe/Ni of 20nm;
S4:CVD method carbon nano-tube:
Carbon nano-tube reactant gas source is CH
4and H
2mixed gas, first the heavy doping silicon chip with patterned catalyst particle is cleaned, remove photoresist, put into reaction chamber; Then vacuumize, after reaching vacuum requirement, pass into hydrogen, apply microwave and make to produce plasma in reflection chamber; Heated substrate makes it reach certain temperature and keep 40min, passes into methane gas, and now carbon nano-tube starts growth; In growth course lumen, vacuum tightness remains unchanged; Through about 10min, close microwave source and radio heater, stop passing into methane gas, close hydrogen, pass into argon gas, take out the substrate of heavy doping silicon chip, obtain the carbon nano-tube of patterning;
S5: Surface Modification of Carbon Nanotube By Plasma:
A. first the hydrogen peroxide of 60% acetic acid of 40ml and 10% of 20ml is put into beaker, fully mix, add micro-tungsten powder wherein, then have the substrate of the heavy doping silicon chip of Patterned Carbon Nanotube to put into growth, leave standstill 2h;
B. there is the substrate of the heavy doping silicon chip of carbon nano-tube to send in plasma generator growth, be evacuated to 1.0 × 10
-1below pa, then with inert gas N
2for carrier gas, by reactant ammoniacal liquor with N
2air-flow is brought in instrument, makes air-flow velocity be stabilized in 20mL/min, waits for 1h, open power source, be adjusted to 50W, in instrument, produce aura, under action of plasma, gas molecule valence link is destroyed, and great amount of hydroxy group produces, carbon nano-tube in the environment of acetic acid and hydrogen peroxide through the effect of tungsten powder, carbon nano-tube is by the hydroxyl modified produced, after Cement Composite Treated by Plasma 30min, close power source, take out substrate;
S6: prepare top electrode: by the heavy doping silicon chip ozone clean 20min obtained in step S1 ~ S5, covers the ceramic mask of top electrode, then heavy doping silicon chip is put into magnetic control sputtering device, lower than 1.5 × 10
-3under pa vacuum, sputtering has the top electrode of Au layer, and wherein, the thickness of Au layer is about 150nm;
S7: welding encapsulation: with lead-in wire, top electrode is connected with bottom electrode respectively, described moisture sensor is encapsulated, and digital electric bridge is welded with carbon nano-tube capacity type wet dependent sensor, digital electric bridge is used for reading in the capacitance variations of moisture sensor under humidity changing environment, demarcates water vapor concentration with this.
Test data: carbon nano-tube capacity type wet dependent sensor is placed on a metal sealing chamber (1m
3) in, metal sealing chamber is with air intake opening and gas outlet.During test, digital electric bridge output frequency is 50Hz, and probe temperature is 20 DEG C, and then controlling relative humidity variations scope is 5% ~ 95%, reads capacitance with humidity situation of change;
The sensitivity definition of this carbon nano-tube capacity type wet dependent sensor is: ︱ C
rH-C
11︱/C
11× 100%, wherein C
rHfor the sensor electrical capacitance obtained under test environment humidity, C
11for the capacitance of relative humidity 11% lower sensor.The response of this carbon nano-tube capacity type wet dependent sensor or be defined as testing capacitor value release time and reach total variation 80% time used at the variable quantity of 11%RH to 75%RH;
Test finds, under the relative humidity of 95%, sensitivity is up to 3257, and optimal response and release time are respectively 7s and 14s, and through 2000 repeated tests, the pad value of its electric capacity is less than 10%.The electric capacity of the carbon nano-tube capacitance type sensor of this video monitoring equipment is good with envionmental humidity linear change, highly sensitive, fast response time, good stability.
Embodiment 3
Based on a video monitoring equipment for response humidity change fast, the outside of described video monitoring equipment is provided with moisture sensor module, and this moisture sensor module comprises the heavy doping silicon chip laid successively from top to bottom, the SiO being close to heavy doping silicon chip
2layer, carbon nanotube layer, be positioned at SiO
2bottom electrode and the top electrode be positioned on carbon nanotube layer of interlayer, described carbon nanotube layer is grown on SiO
2on layer; Described bottom electrode has metallic film, and described metallic film is followed successively by from inside to outside has the Cr layer of adhesion, the Cu layer of conductive and heat-conductive and the Au layer as electrode layer, and the thickness of described Cr layer, Cu layer and Au layer is followed successively by 50nm, 80nm and 400nm; Described carbon nanotube layer adopts catalyzer and/or photoetching process to realize the growth of its localization, described carbon nanotube layer using plasma after growth makes it produce hydroxyl modified, and carbon nanotube layer have passed through and adds the acetic acid of micro-tungsten powder and the process of hydrogen peroxide mixed solution before plasma hydroxyl modified; The surface of described metallic film is glued with the bacterial enzyme rete of sensing bacterial growth, and this bacterial enzyme rete forms the bacterium wet sensitive sensor of sensing moisture together with metallic film; Described bottom electrode with top electrode is connected with a micro-control processor for being connected with client communication.
Further, the making of described moisture sensor comprises the following steps:
S1:SiO
2layer makes: get described heavy doping silicon chip, put it in tubular furnace, and according to the ramp of 10 DEG C/min to 500 DEG C, insulation 12h, then naturally cools to room temperature, can form SiO at heavy doping silicon chip surface
2layer;
S2: bottom electrode makes: have SiO by what obtain in step S1
2the heavy doping silicon chip of layer uses acetone, ethanol, washed with de-ionized water 15min post-drying, successively at its surperficial spin coating photoresist (low speed 900rpm, 15s; High speed 3500rpm, 50s), use bottom electrode mask to expose it, development after 120 DEG C of oven dry 2min, oven dry, at CHF
3dry etching SiO under atmosphere
2layer, etching 30min, will etch SiO
2heavy doping silicon chip after layer cleaning puts into magnetic control sputtering device, lower than 1.5 × 10
-3magnetron sputtering C r layer, Cu layer and Au layer successively under pa vacuum; By fixing for the bottom electrode (1) of good for magnetron sputtering Cr layer, Cu layer and Au layer surface upper bacterium enzyme membrane, then cleaning photoetching glue; The size of described heavy doping silicon chip is 2cm × 2cm;
S3: gas blowout catalyst film, step is as follows:
A. use Fe/Ni nano particle as the catalyzer of carbon nano tube growth, first, to the heavy doping silicon chip spin coating photoresist with bottom electrode, adopt the localization mask of catalyzer to expose it, then through development, clean for subsequent use;
B. the dispersion liquid of catalyst Fe/Ni is prepared: the Fe nano particle and the Ni nano particle that take 200mg, 50mg respectively, added the 98%H of 60ml
2sO
4with 69% of 40ml HNO
3in mixed solution, in 80 DEG C of water-baths, ultrasonic 3h, then filters with after washed with de-ionized water, obtain dry Fe/Ni mix nanoparticles, then take the Fe/Ni nano particle of 100mg, add in the deionized water of 500ml, after fully stirring, obtain the dispersion liquid of Fe/Ni mix nanoparticles;
C. use high pure nitrogen as gas blowout carrier, regulate the horizontal and vertical distance between airbrush and heavy doping silicon chip, just volatilize when the solvent of dispersion liquid is arrived on substrate and be as the criterion, gas blowout 5 times, each gas blowout 20s, makes the uniform thickness of formation one deck be about the mix nanoparticles film of the catalyst Fe/Ni of 20nm;
S4:CVD method carbon nano-tube:
Carbon nano-tube reactant gas source is CH
4and H
2mixed gas, first the heavy doping silicon chip with patterned catalyst particle is cleaned, remove photoresist, put into reaction chamber; Then vacuumize, after reaching vacuum requirement, pass into hydrogen, apply microwave and make to produce plasma in reflection chamber; Heated substrate makes it reach certain temperature and keep 40min, passes into methane gas, and now carbon nano-tube starts growth; In growth course lumen, vacuum tightness remains unchanged; Through about 10min, close microwave source and radio heater, stop passing into methane gas, close hydrogen, pass into argon gas, take out the substrate of heavy doping silicon chip, obtain the carbon nano-tube of patterning;
S5: Surface Modification of Carbon Nanotube By Plasma:
A. first the hydrogen peroxide of 60% acetic acid of 40ml and 10% of 20ml is put into beaker, fully mix, add micro-tungsten powder wherein, then have the substrate of the heavy doping silicon chip of Patterned Carbon Nanotube to put into growth, leave standstill 2h;
B. there is the substrate of the heavy doping silicon chip of carbon nano-tube to send in plasma generator growth, be evacuated to 1.0 × 10
-1below pa, then with inert gas N
2for carrier gas, by reactant ammoniacal liquor with N
2air-flow is brought in instrument, makes air-flow velocity be stabilized in 20mL/min, waits for 1h, open power source, be adjusted to 50W, in instrument, produce aura, under action of plasma, gas molecule valence link is destroyed, and great amount of hydroxy group produces, carbon nano-tube in the environment of acetic acid and hydrogen peroxide through the effect of tungsten powder, carbon nano-tube is by the hydroxyl modified produced, after Cement Composite Treated by Plasma 30min, close power source, take out substrate;
S6: prepare top electrode: by the heavy doping silicon chip ozone clean 20min obtained in step S1 ~ S5, covers the ceramic mask of top electrode, then heavy doping silicon chip is put into magnetic control sputtering device, lower than 1.5 × 10
-3under pa vacuum, sputtering has the top electrode of Au layer, and wherein, the thickness of Au layer is about 150nm;
S7: welding encapsulation: with lead-in wire, top electrode is connected with bottom electrode respectively, described moisture sensor is encapsulated, and digital electric bridge is welded with carbon nano-tube capacity type wet dependent sensor, digital electric bridge is used for reading in the capacitance variations of moisture sensor under humidity changing environment, demarcates water vapor concentration with this.
Test data: carbon nano-tube capacity type wet dependent sensor is placed on a metal sealing chamber (1m
3) in, metal sealing chamber is with air intake opening and gas outlet.During test, digital electric bridge output frequency is 50Hz, and probe temperature is 20 DEG C, and then controlling relative humidity variations scope is 5% ~ 95%, reads capacitance with humidity situation of change;
The sensitivity definition of this carbon nano-tube capacity type wet dependent sensor is: ︱ C
rH-C
11︱/C
11× 100%, wherein C
rHfor the sensor electrical capacitance obtained under test environment humidity, C
11for the capacitance of relative humidity 11% lower sensor.The response of this carbon nano-tube capacity type wet dependent sensor or be defined as testing capacitor value release time and reach total variation 80% time used at the variable quantity of 11%RH to 75%RH;
Test finds, under the relative humidity of 95%, sensitivity is up to 2967, and optimal response and release time are respectively 10s and 17s, and through 2000 repeated tests, the pad value of its electric capacity is less than 10%.The electric capacity of the carbon nano-tube capacitance type sensor of this video monitoring equipment is good with envionmental humidity linear change, highly sensitive, fast response time, good stability.
Embodiment 4
Based on a video monitoring equipment for response humidity change fast, the outside of described video monitoring equipment is provided with moisture sensor module, and this moisture sensor module comprises the heavy doping silicon chip laid successively from top to bottom, the SiO being close to heavy doping silicon chip
2layer, carbon nanotube layer, be positioned at SiO
2bottom electrode and the top electrode be positioned on carbon nanotube layer of interlayer, described carbon nanotube layer is grown on SiO
2on layer; Described bottom electrode has metallic film, and described metallic film is followed successively by from inside to outside has the Cr layer of adhesion, the Cu layer of conductive and heat-conductive and the Au layer as electrode layer, and the thickness of described Cr layer, Cu layer and Au layer is followed successively by 40nm, 80nm and 300nm; Described carbon nanotube layer adopts catalyzer and/or photoetching process to realize the growth of its localization, described carbon nanotube layer using plasma after growth makes it produce hydroxyl modified, and carbon nanotube layer have passed through and adds the acetic acid of micro-tungsten powder and the process of hydrogen peroxide mixed solution before plasma hydroxyl modified; The surface of described metallic film is glued with the bacterial enzyme rete of sensing bacterial growth, and this bacterial enzyme rete forms the bacterium wet sensitive sensor of sensing moisture together with metallic film; Described bottom electrode with top electrode is connected with a micro-control processor for being connected with client communication.
Further, the making of described moisture sensor comprises the following steps:
S1:SiO
2layer makes: get described heavy doping silicon chip, put it in tubular furnace, and according to the ramp of 10 DEG C/min to 500 DEG C, insulation 12h, then naturally cools to room temperature, can form SiO at heavy doping silicon chip surface
2layer;
S2: bottom electrode makes: have SiO by what obtain in step S1
2the heavy doping silicon chip of layer uses acetone, ethanol, washed with de-ionized water 15min post-drying, successively at its surperficial spin coating photoresist (low speed 900rpm, 15s; High speed 3500rpm, 50s), use bottom electrode mask to expose it, development after 120 DEG C of oven dry 2min, oven dry, at CHF
3dry etching SiO under atmosphere
2layer, etching 30min, will etch SiO
2heavy doping silicon chip after layer cleaning puts into magnetic control sputtering device, lower than 1.5 × 10
-3magnetron sputtering C r layer, Cu layer and Au layer successively under pa vacuum; By fixing for the bottom electrode (1) of good for magnetron sputtering Cr layer, Cu layer and Au layer surface upper bacterium enzyme membrane, then cleaning photoetching glue; The size of described heavy doping silicon chip is 2cm × 2cm;
S3: gas blowout catalyst film, step is as follows:
A. use Fe/Ni nano particle as the catalyzer of carbon nano tube growth, first, to the heavy doping silicon chip spin coating photoresist with bottom electrode, adopt the localization mask of catalyzer to expose it, then through development, clean for subsequent use;
B. the dispersion liquid of catalyst Fe/Ni is prepared: the Fe nano particle and the Ni nano particle that take 200mg, 45mg respectively, added the 98%H of 60ml
2sO
4with 69% of 40ml HNO
3in mixed solution, in 80 DEG C of water-baths, ultrasonic 3h, then filters with after washed with de-ionized water, obtain dry Fe/Ni mix nanoparticles, then take the Fe/Ni nano particle of 100mg, add in the deionized water of 500ml, after fully stirring, obtain the dispersion liquid of Fe/Ni mix nanoparticles;
C. use high pure nitrogen as gas blowout carrier, regulate the horizontal and vertical distance between airbrush and heavy doping silicon chip, just volatilize when the solvent of dispersion liquid is arrived on substrate and be as the criterion, gas blowout 5 times, each gas blowout 20s, makes the uniform thickness of formation one deck be about the mix nanoparticles film of the catalyst Fe/Ni of 20nm;
S4:CVD method carbon nano-tube:
Carbon nano-tube reactant gas source is CH
4and H
2mixed gas, first the heavy doping silicon chip with patterned catalyst particle is cleaned, remove photoresist, put into reaction chamber; Then vacuumize, after reaching vacuum requirement, pass into hydrogen, apply microwave and make to produce plasma in reflection chamber; Heated substrate makes it reach certain temperature and keep 40min, passes into methane gas, and now carbon nano-tube starts growth; In growth course lumen, vacuum tightness remains unchanged; Through about 10min, close microwave source and radio heater, stop passing into methane gas, close hydrogen, pass into argon gas, take out the substrate of heavy doping silicon chip, obtain the carbon nano-tube of patterning;
S5: Surface Modification of Carbon Nanotube By Plasma:
A. first the hydrogen peroxide of 60% acetic acid of 40ml and 10% of 20ml is put into beaker, fully mix, add micro-tungsten powder wherein, then have the substrate of the heavy doping silicon chip of Patterned Carbon Nanotube to put into growth, leave standstill 2h;
B. there is the substrate of the heavy doping silicon chip of carbon nano-tube to send in plasma generator growth, be evacuated to 1.0 × 10
-1below pa, then with inert gas N
2for carrier gas, by reactant ammoniacal liquor with N
2air-flow is brought in instrument, makes air-flow velocity be stabilized in 20mL/min, waits for 1h, open power source, be adjusted to 50W, in instrument, produce aura, under action of plasma, gas molecule valence link is destroyed, and great amount of hydroxy group produces, carbon nano-tube in the environment of acetic acid and hydrogen peroxide through the effect of tungsten powder, carbon nano-tube is by the hydroxyl modified produced, after Cement Composite Treated by Plasma 30min, close power source, take out substrate;
S6: prepare top electrode: by the heavy doping silicon chip ozone clean 20min obtained in step S1 ~ S5, covers the ceramic mask of top electrode, then heavy doping silicon chip is put into magnetic control sputtering device, lower than 1.5 × 10
-3under pa vacuum, sputtering has the top electrode of Au layer, and wherein, the thickness of Au layer is about 100nm;
S7: welding encapsulation: with lead-in wire, top electrode is connected with bottom electrode respectively, described moisture sensor is encapsulated, and digital electric bridge is welded with carbon nano-tube capacity type wet dependent sensor, digital electric bridge is used for reading in the capacitance variations of moisture sensor under humidity changing environment, demarcates water vapor concentration with this.
Test data:
Carbon nano-tube capacity type wet dependent sensor is placed on a metal sealing chamber (1m
3) in, metal sealing chamber is with air intake opening and gas outlet.During test, digital electric bridge output frequency is 50Hz, and probe temperature is 20 DEG C, and then controlling relative humidity variations scope is 5% ~ 95%, reads capacitance with humidity situation of change;
The sensitivity definition of this carbon nano-tube capacity type wet dependent sensor is: ︱ C
rH-C
11︱/C
11× 100%, wherein C
rHfor the sensor electrical capacitance obtained under test environment humidity, C
11for the capacitance of relative humidity 11% lower sensor.The response of this carbon nano-tube capacity type wet dependent sensor or be defined as testing capacitor value release time and reach total variation 80% time used at the variable quantity of 11%RH to 75%RH;
Test finds, under the relative humidity of 95%, sensitivity is up to 2893, and optimal response and release time are respectively 12s and 25s, and through 2000 repeated tests, the pad value of its electric capacity is less than 10%.The electric capacity of the carbon nano-tube capacitance type sensor of this video monitoring equipment is good with envionmental humidity linear change, highly sensitive, fast response time, good stability.
Embodiment 5
Based on a video monitoring equipment for response humidity change fast, the outside of described video monitoring equipment is provided with moisture sensor module, and this moisture sensor module comprises the heavy doping silicon chip laid successively from top to bottom, the SiO being close to heavy doping silicon chip
2layer, carbon nanotube layer, be positioned at SiO
2bottom electrode and the top electrode be positioned on carbon nanotube layer of interlayer, described carbon nanotube layer is grown on SiO
2on layer; Described bottom electrode has metallic film, and described metallic film is followed successively by from inside to outside has the Cr layer of adhesion, the Cu layer of conductive and heat-conductive and the Au layer as electrode layer, and the thickness of described Cr layer, Cu layer and Au layer is followed successively by 20nm, 100nm and 800nm; Described carbon nanotube layer adopts catalyzer and/or photoetching process to realize the growth of its localization, described carbon nanotube layer using plasma after growth makes it produce hydroxyl modified, and carbon nanotube layer have passed through and adds the acetic acid of micro-tungsten powder and the process of hydrogen peroxide mixed solution before plasma hydroxyl modified; The surface of described metallic film is glued with the bacterial enzyme rete of sensing bacterial growth, and this bacterial enzyme rete forms the bacterium wet sensitive sensor of sensing moisture together with metallic film; Described bottom electrode with top electrode is connected with a micro-control processor for being connected with client communication.
Further, the making of described moisture sensor comprises the following steps:
S1:SiO
2layer makes: get described heavy doping silicon chip, put it in tubular furnace, and according to the ramp of 10 DEG C/min to 500 DEG C, insulation 12h, then naturally cools to room temperature, can form SiO at heavy doping silicon chip surface
2layer;
S2: bottom electrode makes: have SiO by what obtain in step S1
2the heavy doping silicon chip of layer uses acetone, ethanol, washed with de-ionized water 15min post-drying, successively at its surperficial spin coating photoresist (low speed 900rpm, 15s; High speed 3500rpm, 50s), use bottom electrode mask to expose it, development after 120 DEG C of oven dry 2min, oven dry, at CHF
3dry etching SiO under atmosphere
2layer, etching 30min, will etch SiO
2heavy doping silicon chip after layer cleaning puts into magnetic control sputtering device, lower than 1.5 × 10
-3magnetron sputtering C r layer, Cu layer and Au layer successively under pa vacuum; By fixing for the bottom electrode (1) of good for magnetron sputtering Cr layer, Cu layer and Au layer surface upper bacterium enzyme membrane, then cleaning photoetching glue; The size of described heavy doping silicon chip is 2cm × 2cm;
S3: gas blowout catalyst film, step is as follows:
A. use Fe/Ni nano particle as the catalyzer of carbon nano tube growth, first, to the heavy doping silicon chip spin coating photoresist with bottom electrode, adopt the localization mask of catalyzer to expose it, then through development, clean for subsequent use;
B. the dispersion liquid of catalyst Fe/Ni is prepared: the Fe nano particle and the Ni nano particle that take 200mg, 50mg respectively, added the 98%H of 60ml
2sO
4with 69% of 40ml HNO
3in mixed solution, in 80 DEG C of water-baths, ultrasonic 3h, then filters with after washed with de-ionized water, obtain dry Fe/Ni mix nanoparticles, then take the Fe/Ni nano particle of 100mg, add in the deionized water of 500ml, after fully stirring, obtain the dispersion liquid of Fe/Ni mix nanoparticles;
C. use high pure nitrogen as gas blowout carrier, regulate the horizontal and vertical distance between airbrush and heavy doping silicon chip, just volatilize when the solvent of dispersion liquid is arrived on substrate and be as the criterion, gas blowout 5 times, each gas blowout 20s, makes the uniform thickness of formation one deck be about the mix nanoparticles film of the catalyst Fe/Ni of 20nm;
S4:CVD method carbon nano-tube:
Carbon nano-tube reactant gas source is CH
4and H
2mixed gas, first the heavy doping silicon chip with patterned catalyst particle is cleaned, remove photoresist, put into reaction chamber; Then vacuumize, after reaching vacuum requirement, pass into hydrogen, apply microwave and make to produce plasma in reflection chamber; Heated substrate makes it reach certain temperature and keep 40min, passes into methane gas, and now carbon nano-tube starts growth; In growth course lumen, vacuum tightness remains unchanged; Through about 10min, close microwave source and radio heater, stop passing into methane gas, close hydrogen, pass into argon gas, take out the substrate of heavy doping silicon chip, obtain the carbon nano-tube of patterning;
S5: Surface Modification of Carbon Nanotube By Plasma:
A. first the hydrogen peroxide of 30% acetic acid of 40ml and 10% of 20ml is put into beaker, fully mix, add micro-tungsten powder wherein, then have the substrate of the heavy doping silicon chip of Patterned Carbon Nanotube to put into growth, leave standstill 2h;
B. there is the substrate of the heavy doping silicon chip of carbon nano-tube to send in plasma generator growth, be evacuated to 1.0 × 10
-1below pa, then with inert gas N
2for carrier gas, by reactant ammoniacal liquor with N
2air-flow is brought in instrument, makes air-flow velocity be stabilized in 20mL/min, waits for 1h, open power source, be adjusted to 50W, in instrument, produce aura, under action of plasma, gas molecule valence link is destroyed, and great amount of hydroxy group produces, carbon nano-tube in the environment of acetic acid and hydrogen peroxide through the effect of tungsten powder, carbon nano-tube is by the hydroxyl modified produced, after Cement Composite Treated by Plasma 30min, close power source, take out substrate;
S6: prepare top electrode: by the heavy doping silicon chip ozone clean 20min obtained in step S1 ~ S5, covers the ceramic mask of top electrode, then heavy doping silicon chip is put into magnetic control sputtering device, lower than 1.5 × 10
-3under pa vacuum, sputtering has the top electrode of Au layer, and wherein, the thickness of Au layer is about 200nm;
S7: welding encapsulation: with lead-in wire, top electrode is connected with bottom electrode respectively, described moisture sensor is encapsulated, and digital electric bridge is welded with carbon nano-tube capacity type wet dependent sensor, digital electric bridge is used for reading in the capacitance variations of moisture sensor under humidity changing environment, demarcates water vapor concentration with this.
Test data: carbon nano-tube capacity type wet dependent sensor is placed on a metal sealing chamber (1m
3) in, metal sealing chamber is with air intake opening and gas outlet.During test, digital electric bridge output frequency is 50Hz, and probe temperature is 20 DEG C, and then controlling relative humidity variations scope is 5% ~ 95%, reads capacitance with humidity situation of change;
The sensitivity definition of this carbon nano-tube capacity type wet dependent sensor is: ︱ C
rH-C
11︱/C
11× 100%, wherein C
rHfor the sensor electrical capacitance obtained under test environment humidity, C
11for the capacitance of relative humidity 11% lower sensor.The response of this carbon nano-tube capacity type wet dependent sensor or be defined as testing capacitor value release time and reach total variation 80% time used at the variable quantity of 11%RH to 75%RH;
Test finds, under the relative humidity of 95%, sensitivity is up to 1948, and optimal response and release time are respectively 15s and 27s, and through 2000 repeated tests, the pad value of its electric capacity is less than 10%.The electric capacity of the carbon nano-tube capacitance type sensor of this video monitoring equipment is good with envionmental humidity linear change, highly sensitive, fast response time, good stability.
The above; be only the present invention's preferably embodiment; but protection scope of the present invention is not limited thereto; anyly be familiar with those skilled in the art in the technical scope that the present invention discloses; be equal to according to technological invention of the present invention and inventive concept thereof and replace or change, all should be encompassed within protection scope of the present invention.
Claims (3)
1. the video monitoring equipment based on response humidity change fast, it is characterized in that, the outside of described video monitoring equipment is provided with moisture sensor module, and this moisture sensor module comprises the heavy doping silicon chip (1) laid successively from top to bottom, the SiO being close to heavy doping silicon chip (1)
2layer (2), carbon nanotube layer (4), be positioned at SiO
2bottom electrode (3) between layer (2) and the top electrode (5) be positioned on carbon nanotube layer (4), described carbon nanotube layer (4) is grown on SiO
2on layer (2); Described bottom electrode (3) is metallic film, described metallic film is followed successively by from inside to outside has the Cr layer of adhesion, the Cu layer of conductive and heat-conductive and the Au layer as electrode layer, and the thickness of described Cr layer, Cu layer and Au layer is followed successively by 60nm, 200nm and 500nm; Described carbon nanotube layer (4) adopts catalyzer and/or photoetching process to realize the growth of its localization, described carbon nanotube layer (4) using plasma after growth makes it produce hydroxyl modified, and carbon nanotube layer (4) have passed through and adds the acetic acid of micro-tungsten powder and the process of hydrogen peroxide mixed solution before plasma hydroxyl modified; The surface of described metallic film is glued with the bacterial enzyme rete of sensing bacterial growth, and this bacterial enzyme rete forms the bacterium wet sensitive sensor of sensing moisture together with metallic film; Described bottom electrode (3) is connected with a micro-control processor for being connected with client communication with on top electrode (5).
2. a kind of video monitoring equipment based on response humidity change fast according to claim 1, it is characterized in that, the making of described moisture sensor comprises the following steps:
S1:SiO
2layer makes: get described heavy doping silicon chip (1), put it in tubular furnace, and according to the ramp of 10 DEG C/min to 500 DEG C, insulation 12h, then naturally cools to room temperature, can form SiO on heavy doping silicon chip (1) surface
2layer (2);
S2: bottom electrode makes: have SiO by what obtain in step (1)
2the heavy doping silicon chip (1) of layer (2) uses acetone, ethanol, washed with de-ionized water 15min post-drying successively, at its surperficial spin coating photoresist, uses bottom electrode mask to expose it, and development after 120 DEG C of oven dry 2min, oven dry, at CHF
3dry etching SiO under atmosphere
2layer (2), etching 30min, will etch SiO
2heavy doping silicon chip (1) after layer (2) cleaning puts into magnetic control sputtering device, lower than 1.5 × 10
-3magnetron sputtering C r layer, Cu layer and Au layer successively under pa vacuum; By fixing for the bottom electrode (1) of good for magnetron sputtering Cr layer, Cu layer and Au layer surface upper bacterium enzyme membrane, then cleaning photoetching glue; The size of described heavy doping silicon chip (1) is 2cm × 2cm;
S3: gas blowout catalyst film, step is as follows:
A. the catalyzer that Fe/Ni nano particle grows as carbon nano-tube (4) is used, first, to heavy doping silicon chip (1) the spin coating photoresist with bottom electrode (3), adopt the localization mask of catalyzer to expose it, then through development, clean for subsequent use;
B. the dispersion liquid of catalyst Fe/Ni is prepared: the Fe nano particle and the Ni nano particle that take 200mg, 50mg respectively, added the 98%H of 60ml
2sO
4with 69% of 40ml HNO
3in mixed solution, in 80 DEG C of water-baths, ultrasonic 3h, then filters with after washed with de-ionized water, obtain dry Fe/Ni mix nanoparticles, then take the Fe/Ni nano particle of 100mg, add in the deionized water of 500ml, after fully stirring, obtain the dispersion liquid of Fe/Ni mix nanoparticles;
C. use high pure nitrogen as gas blowout carrier, regulate the horizontal and vertical distance between airbrush and heavy doping silicon chip (1), just volatilize when the solvent of dispersion liquid is arrived on substrate and be as the criterion, gas blowout 5 times, each gas blowout 20s, makes the uniform thickness of formation one deck be about the mix nanoparticles film of the catalyst Fe/Ni of 20nm;
S4:CVD method carbon nano-tube:
Carbon nano-tube (4) reactant gas source is CH
4and H
2mixed gas, first the heavy doping silicon chip (1) with patterned catalyst particle is cleaned, remove photoresist, put into reaction chamber; Then vacuumize, after reaching vacuum requirement, pass into hydrogen, apply microwave and make to produce plasma in reflection chamber; Heated substrate makes it reach certain temperature and keep 40min, passes into methane gas, and now carbon nano-tube (4) starts growth; In growth course lumen, vacuum tightness remains unchanged; Through about 10min, close microwave source and radio heater, stop passing into methane gas, close hydrogen, pass into argon gas, take out the substrate of heavy doping silicon chip (1), obtain the carbon nano-tube (4) of patterning;
S5: Surface Modification of Carbon Nanotube By Plasma:
A. first the hydrogen peroxide of 60% acetic acid of 40ml and 10% of 20ml is put into beaker, abundant mixing, add micro-tungsten powder wherein, then growth had the substrate of the heavy doping silicon chip (1) of Patterned Carbon Nanotube (4) to put into, leave standstill 2h;
B. growth there is is the substrate of the heavy doping silicon chip (1) of carbon nano-tube (4) to send in plasma generator, be evacuated to 1.0 × 10
-1below pa, then with inert gas N
2for carrier gas, by reactant ammoniacal liquor with N
2air-flow is brought in instrument, makes air-flow velocity be stabilized in 20mL/min, waits for 1h, open power source, be adjusted to 50W, in instrument, produce aura, under action of plasma, gas molecule valence link is destroyed, and great amount of hydroxy group produces, carbon nano-tube (4) in the environment of acetic acid and hydrogen peroxide through the effect of tungsten powder, carbon nano-tube is by the hydroxyl modified produced, after Cement Composite Treated by Plasma 30min, close power source, take out substrate;
S6: prepare top electrode: the heavy doping silicon chip (1) obtained in step S1 ~ S5 is used ozone clean 20min, cover the ceramic mask of top electrode (5), then heavy doping silicon chip (1) is put into magnetic control sputtering device, lower than 1.5 × 10
-3under pa vacuum, sputtering has the top electrode (5) of Au layer, and wherein, the thickness of Au layer is about 200nm;
S7: welding encapsulation: with lead-in wire, top electrode (5) is connected with bottom electrode (3) respectively, described moisture sensor is encapsulated, and digital electric bridge is welded with carbon nano-tube capacity type wet dependent sensor, digital electric bridge is used for reading in the capacitance variations of moisture sensor under humidity changing environment, demarcates water vapor concentration with this.
3. a kind of video monitoring equipment based on response humidity change fast according to claim 2, it is characterized in that, in described step S2, the optimum configurations of spin coating photoresist is as follows: low speed 900rpm, 15s; High speed 3500rpm, 50s.
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|---|---|---|---|---|
| CN101303979A (en) * | 2008-07-01 | 2008-11-12 | 上海大学 | Method for preparing nanocrystalline diamond film field-effect transistor |
| CN101820016A (en) * | 2010-04-16 | 2010-09-01 | 厦门大学 | Method for preparing titanium dioxide ultraviolet photoelectric detector |
| CN101866860A (en) * | 2010-05-26 | 2010-10-20 | 上海大学 | Preparation method of ZnO thin film field-effect transistor |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101303979A (en) * | 2008-07-01 | 2008-11-12 | 上海大学 | Method for preparing nanocrystalline diamond film field-effect transistor |
| CN101820016A (en) * | 2010-04-16 | 2010-09-01 | 厦门大学 | Method for preparing titanium dioxide ultraviolet photoelectric detector |
| CN101866860A (en) * | 2010-05-26 | 2010-10-20 | 上海大学 | Preparation method of ZnO thin film field-effect transistor |
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