CN105529379A - Doping method - Google Patents
Doping method Download PDFInfo
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- CN105529379A CN105529379A CN201410522222.XA CN201410522222A CN105529379A CN 105529379 A CN105529379 A CN 105529379A CN 201410522222 A CN201410522222 A CN 201410522222A CN 105529379 A CN105529379 A CN 105529379A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
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Abstract
The invention discloses a doping method, which comprises the steps of: forming textured surfaces on front and back surfaces of a first conduction type substrate; forming a first conduction type doped layer and a first oxidation layer on the front surface of the first conduction type substrate through adopting a thermal diffusion process; forming a second conduction type doped layer on the back surface of the first conduction type substrate through diffusion, and forming a second oxidation layer on the second conduction type doped layer; forming patterns in the second oxidation layer; etching predetermined regions of the second conduction type doped layer till the first conduction type substrate is exposed; and forming first conduction type doped regions on surfaces of grooves. The doping method provided by the invention utilizes the oxidation layer formed during the thermal diffusion process as a mask to achieve local doping of subsequent ion implantation, thus, a mask does not need to be additionally formed, the whole process is very simple, and the continuity is high.
Description
Technical field
The present invention relates to a kind of doping method, particularly relate to a kind of doping method for back contact battery.
Background technology
In semiconductor doping process, usually need the doping realizing local, the selective emitting electrode structure (needing to form Local Gravity doping) of such as solar cell, the structure (PN junction is all formed at the back side of cell piece) of back contact battery, or in MOS (metal-oxide semiconductor (MOS)) pipe, also can need the structure forming local doping.Usually, in order to form the doping of local, needing to use mask (mask), by needing the position of doping to come out, the region overlay without the need to doping being got up.Conventional mask such as photoresist, such as, adopt photoetching to come out needing the position of doping so that follow-up doping.
That is, realize in the technique of local doping in existing needs, inevitably have the step of one formation mask, and the precision of the quality of mask, mask also can affect subsequent technique to a certain extent, the formation of mask usually adopts photoetching to realize, and the technique of photoetching can increase cost undoubtedly to a certain extent and increase the complexity of technique.
In addition, in doping process, usually use diffusion method to form doped layer, but diffusion is omnibearing, direction-free.In order to realize the doping of formulating region, often needing to arrange mask in the region without the need to doping, protecting the region without the need to doping.This just makes integrated artistic become more complicated, and increasing of processing step will inevitably introduce more uncontrollable factor, thus makes the control of processing procedure more complicated.
Summary of the invention
The technical problem to be solved in the present invention be in order under overcoming in prior art the occasion that needs to form local doping unavoidable have one formation mask operation, adopt thermal diffusion to form doped region time must arrange mask to protect the region without the need to doping thus add the defect of the complexity of technique; a kind of doping method with height continuity is provided; the feature that it makes use of diffusion technology itself forms mask; avoid extra process masks; simplify technological process, the continuity between step is stronger.
The present invention solves above-mentioned technical problem by following technical proposals:
A kind of doping method, its feature is, it comprises the following steps:
S1: form matte at the front and back of the first conductivity type substrate;
S2: form the first conduction type doped layer by thermal diffusion process in the front of the first conductivity type substrate, and on this first conduction type doped layer, the first oxide layer is formed in diffusing, doping process;
S3: etch the edge of this first conductivity type substrate and the back side of this first conductivity type substrate of polishing;
S4: diffusing, doping forms the second conduction type doped layer in the back side of the first conductivity type substrate, and on this second conduction type doped layer, the second oxide layer is formed in the process of diffusing, doping;
S5: graphically this second oxide layer is to expose the second conduction type doped layer of presumptive area;
S6: the second conduction type doped layer of etching presumptive area is until expose this first conductivity type substrate and form groove thus in the back side of this first conductivity type substrate;
S7: form the first conduction type doped region in the surface of this groove.
In this technical scheme, make use of the oxide layer (such as BSG (Pyrex) or PSG (phosphorosilicate glass)) that formed in thermal diffusion process as mask, realize follow-up local doping, such as pass through ion implantation, thus, without the need to additionally forming mask, integrated artistic is very simple, and continuity is very strong.
In addition; owing to all needing to form doped layer in two faces of substrate, in this technical scheme, the first oxide layer formed on front when make use of formation first conduction type doped layer is as front mask; protect this first conduction type doped layer, extending influence from step S4.
This technical scheme takes full advantage of the feature of thermal diffusion, the formation of doping step and mask is combined, is highly integrated with each step, simplify overall technique thus.
Preferably, the second oxide layer of presumptive area is etched in step S5 by laser or etch paste.
Preferably, the second conduction type doped layer and part first conductivity type substrate of presumptive area is etched in step S6 by acid reagent or alkaline reagent.
Preferably, this first conduction type doped region is formed by the mode of ion implantation or thermal diffusion process in step S7.Preferably, adopt the mode of ion implantation to form this first conduction type doped region, to ensure preferably directivity, avoid the first conduction type doped region and the contact without the second conduction type doped layer etched.
Preferably, this first oxide layer is the first conduction type doped silicon glass, and/or this second oxide layer is the second conduction type doped silicon glass.
Preferably, comprise after step S7: remove this first oxide layer and this second oxide layer.
Preferably, the thermal diffusion process in step S2 is for spread back-to-back, and the back side of such first conductivity type substrate would not be affected, so that follow-up processing procedure.
On the basis meeting this area general knowledge, above-mentioned each optimum condition, can combination in any, obtains the preferred embodiments of the invention.
Positive progressive effect of the present invention is:
1, present invention utilizes the oxide layer (such as BSG (Pyrex) or PSG (phosphorosilicate glass)) that formed in thermal diffusion process as mask, realize the local doping that subsequent ion injects, thus, eliminate the technique of extra formation mask, the continuity thus between each step is stronger.
2, thermal diffusion process is adopted to form the oxide layer of substrate face; and using it as the protection mask of second time thermal diffusion; in order to avoid the doped layer that front has been formed is subject to the impact of second time diffusion, makes full use of the feature of thermal diffusion process, make the integrated level of integrated artistic higher.
Accompanying drawing explanation
Fig. 1-8 is the process chart of one embodiment of the invention.
Embodiment
Mode below by embodiment further illustrates the present invention, but does not therefore limit the present invention among described scope of embodiments.The experimental technique of unreceipted actual conditions in the following example, conventionally and condition, or selects according to catalogue.
Embodiment 1
With reference to figure 1, first the first conductivity type substrate 1 front and back formed matte, in the present embodiment using the upper surface of substrate as front, lower surface is as the back side.
With reference to figure 2, in the front of the first conductivity type substrate, form the first conduction type doped layer 2 by thermal diffusion process, and on this first conduction type doped layer 2, form the first oxide layer 3 in diffusing, doping process.Wherein thermal diffusion process herein have employed the mode spread back-to-back, and the back side of such first conductivity type substrate would not be affected, so that follow-up processing procedure.
With reference to figure 3, etch the edge of this first conductivity type substrate and the back side of this first conductivity type substrate of polishing.
With reference to figure 4, in the back side of the first conductivity type substrate 1, diffusing, doping forms the second conduction type doped layer 4, and on this second conduction type doped layer 4, forms the second oxide layer 5 in the process of diffusing, doping.Herein; without the need to arranging protective layer in addition in advance; this first oxide layer 3 before formed during first time thermal diffusion just can as protection mask; the first conduction type doped layer 2 in front is protected, avoids the first conduction type doped layer formed that extends influence of the second conductive type impurity.
With reference to figure 5, graphically this second oxide layer is to expose the second conduction type doped layer of presumptive area 6.The second oxide layer of presumptive area is wherein etched by laser or etch paste.
With reference to figure 6, the second conduction type doped layer of etching presumptive area is until expose this first conductivity type substrate and form groove 12 thus in the back side of this first conductivity type substrate.Wherein etch the second conduction type doped layer of presumptive area by acid reagent or alkaline reagent and part first conductivity type substrate thus form groove.And just as mask, for the doping of follow-up local, like this, just without the need to arranging extra mask, a procedure can be eliminated, simplifying overall flow without the second oxide layer of etching.
With reference to figure 7, in the surface of this groove, form the first conduction type doped region 7.Adopt the mode of ion implantation to form this first conduction type doped region in the present embodiment, to ensure preferably directivity, avoid the first conduction type doped region and the contact without the second conduction type doped layer etched.
With reference to figure 8, remove this first oxide layer 3 and this second oxide layer 5, obtain doped structure as shown in Figure 8, for the making of IBC battery (a kind of back contact battery).
In this technical scheme, make use of the oxide layer (such as BSG (Pyrex) or PSG (phosphorosilicate glass)) that formed in thermal diffusion process as mask, realize the local doping that subsequent ion injects, thus, without the need to additionally forming mask, integrated artistic is very simple, and continuity is very strong.
In addition; owing to all needing to form doped layer in two faces of substrate, in this technical scheme, the first oxide layer formed on front when make use of formation first conduction type doped layer is as front mask; protect this first conduction type doped layer, from the impact of back side diffusion.
This technical scheme takes full advantage of the feature of thermal diffusion, the formation of doping step and mask is combined, is highly integrated with each step, simplify overall technique thus.
In order to clearly illustrate the structures such as each doped region, oxide layer (BSG and PSG), matte, the size of the above-mentioned various piece in accompanying drawing is not described in proportion, and those skilled in the art are to be understood that the ratio in accompanying drawing is not limitation of the present invention.In addition, above-mentioned front and back is also all comparatively speaking, and those skilled in the art should know such convenience representing description in conjunction with the common practise of this area, not should be understood to limitation of the present invention.
Although the foregoing describe the specific embodiment of the present invention, it will be understood by those of skill in the art that these only illustrate, protection scope of the present invention is defined by the appended claims.Those skilled in the art, under the prerequisite not deviating from principle of the present invention and essence, can make various changes or modifications to these execution modes, but these change and amendment all falls into protection scope of the present invention.
Claims (7)
1. a doping method, is characterized in that, it comprises the following steps:
S1: form matte at the front and back of the first conductivity type substrate;
S2: form the first conduction type doped layer by thermal diffusion process in the front of the first conductivity type substrate, and on this first conduction type doped layer, the first oxide layer is formed in diffusing, doping process;
S3: etch the edge of this first conductivity type substrate and the back side of this first conductivity type substrate of polishing;
S4: diffusing, doping forms the second conduction type doped layer in the back side of the first conductivity type substrate, and on this second conduction type doped layer, the second oxide layer is formed in the process of diffusing, doping;
S5: graphically this second oxide layer is to expose the second conduction type doped layer of presumptive area;
S6: the second conduction type doped layer of etching presumptive area is until expose this first conductivity type substrate and form groove thus in the back side of this first conductivity type substrate;
S7: form the first conduction type doped region in the surface of this groove.
2. doping method as claimed in claim 1, be is characterized in that, etched the second oxide layer of presumptive area in step S5 by laser or etch paste.
3. doping method as claimed in claim 1, be is characterized in that, etched the second conduction type doped layer and part first conductivity type substrate of presumptive area in step S6 by acid reagent or alkaline reagent.
4. doping method as claimed in claim 1, is characterized in that, form this first conduction type doped region in step S7 by the mode of ion implantation or thermal diffusion process.
5. doping method as claimed in claim 1, it is characterized in that, this first oxide layer is the first conduction type doped silicon glass, and/or this second oxide layer is the second conduction type doped silicon glass.
6. doping method as claimed in claim 1, is characterized in that, comprise after step S7: remove this first oxide layer and this second oxide layer.
7. as the doping method in claim 1-6 as described in any one, it is characterized in that, the thermal diffusion process in step S2 is for spread back-to-back.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410522222.XA CN105529379A (en) | 2014-09-30 | 2014-09-30 | Doping method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410522222.XA CN105529379A (en) | 2014-09-30 | 2014-09-30 | Doping method |
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|---|---|
| CN105529379A true CN105529379A (en) | 2016-04-27 |
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| CN201410522222.XA Pending CN105529379A (en) | 2014-09-30 | 2014-09-30 | Doping method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107785456A (en) * | 2017-09-27 | 2018-03-09 | 泰州中来光电科技有限公司 | A kind of preparation method of back contact solar cell |
| CN113130702A (en) * | 2021-03-08 | 2021-07-16 | 浙江爱旭太阳能科技有限公司 | Back contact type solar cell and preparation method thereof |
-
2014
- 2014-09-30 CN CN201410522222.XA patent/CN105529379A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107785456A (en) * | 2017-09-27 | 2018-03-09 | 泰州中来光电科技有限公司 | A kind of preparation method of back contact solar cell |
| CN113130702A (en) * | 2021-03-08 | 2021-07-16 | 浙江爱旭太阳能科技有限公司 | Back contact type solar cell and preparation method thereof |
| CN113130702B (en) * | 2021-03-08 | 2022-06-24 | 浙江爱旭太阳能科技有限公司 | Back contact type solar cell and preparation method thereof |
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