CN1055142C - Technology for preparation of metal material single crystal - Google Patents
Technology for preparation of metal material single crystal Download PDFInfo
- Publication number
- CN1055142C CN1055142C CN95110277A CN95110277A CN1055142C CN 1055142 C CN1055142 C CN 1055142C CN 95110277 A CN95110277 A CN 95110277A CN 95110277 A CN95110277 A CN 95110277A CN 1055142 C CN1055142 C CN 1055142C
- Authority
- CN
- China
- Prior art keywords
- technology
- preparation
- crystal
- single crystal
- mother alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Abstract
The present invention relates to a preparation technique of metal material single crystal. An orientated growth method is adopted, which comprises the preparation of a mother alloy sample. The present invention is characterized in that a reduced section with the size of 10 to 20mm is processed out in the place which is distant from the bottom of the mother alloy sample with a distance of 20 to 40mm; the part of the reduced section filled with ceramic paint is a crystal selector; the whole crystal selector is put into a ceramic mould case after being dried and hardened; and the crystal selector is then remelted in an orientated solidification furnace and grows in an orientated mode. The method has the advantages of simple process, high successful rate of single crystal and basically no need of mechanical processing.
Description
The present invention relates to the technology of preparing of single-crystal metal material.
R.A.Laudise, once in The growth of sigle crystals (Prentice Hall Inc.1970), narrated a kind of method for preparing monocrystalline, the method that employing is made capillary form or cucurbit string shape crystal selector with crucible bottom is selected crystalline substance, advantage is by repeatedly choosing is brilliant, success ratio can be than higher, and shortcoming is that crystalline orientation control is bad, needs repeatedly choosing brilliant, crystal selector and crucible connect together, and manufacture pretty troublesome.TS.Noggle Rev.Sci.Instr, 24 (1953) 184 also described a kind of way, were that employing is with Al
2O
3Powder compresses the method growing single-crystal of formation " soft mode ", and its concrete operations are: the mother alloy piece is processed into the shape of required sample, and is with a pointed cone in the bottom, put into corundum crucible then, use Al on every side
2O
3Powder compresses formation " soft mode ", together put into directed stove oriented growth together with crucible and make monocrystalline, its advantage is moulding in advance, the monocrystalline shape can be near the net shape size, reduce the mechanical workout of monocrystalline, the monocrystalline of the high melting point metal materials that is more suitable for growing, shortcoming is that " soft mode " is by lapis amiridis is compressed formation, operate loaded down with trivial details, and Al
2O
3" soft mode " may be not fine and close, and sample may be out of shape Al when heating and fusing
2O
3The thickness of " soft mode " more greatly and not fine and close, thermal conduction is slower, necessary thermograde when seriously reducing the monocrystalline oriented growth, necessary thermograde when seriously reducing the monocrystalline oriented growth, if in vacuum system, operate, Al
2O
3Powder may contaminated vacuum system, and crystalline orientation is uncontrollable.
The object of the present invention is to provide a kind of technology simple, and the success ratio height, do not need the technology of preparing of the nickel-aluminum base alloy monocrystal material of mechanical workout substantially.
The invention provides a kind of technology of preparing of nickel-aluminum base alloy monocrystalline, system adopts the way of oriented growth, comprises the preparation of mother alloy sample, it is characterized in that: the necking down that processes one 10～20mm on the 20～40mm of distance mother alloy sample bottom, necking section is repeatedly filled with ceramic coating and is dry and after being crystal selector, integral body is put into ceramic shell mould, remelting and oriented growth in directional solidification furnace, and described necking down shape can be circle, oval, square, batter post shape, kinking shape or volution etc.The present invention has following advantage:
Crystal selector and formwork is independent 1., to produce respectively, technology is simple;
2. ceramic crystal selector and necking section make up in advance, reinstall formwork, convenient and reliable operation;
3. necking section can be made different shapes and cross dimensions, selects brilliant success ratio height, and crystalline orientation may be controlled to preferential orientation;
4. can simplify the ceramic shell mould shape, preparation is simple, can prepare the high-purity ceramic formwork, and use temperature improves more than 150 ℃ than complicated formwork;
5. avoid other method problem, the problem includes: thin neck crystal selector fills the bad problem of type.
By embodiment in detail the present invention is described in detail below in conjunction with accompanying drawing.
Accompanying drawing 1 is the single crystal growing synoptic diagram;
Accompanying drawing 2 is the photo in kind of growing single-crystal.
Embodiment:
The synoptic diagram of single crystal growing such as accompanying drawing 1,1 are formwork; 2 is melt; 3 is monocrystalline; 4 select the device device for the separate type pottery; 5 is initial column crystal.
With NiAl base alloy Ni
50Al
30Fe
20Alloy casting becomes the mother alloy rod of Φ 8mm, again at the 26mm place, is processed into the cylindric necking down of Φ 0.8mm, at necking section by being binding agent, with Al with silicate hydrolyzate liquid
2O
3Powder is that the ceramic coating of filler is filled in bottleneck and seasoning, repeats repeatedly to fill with dry to reach a diameter of phi 6.9mm until necking section filling paint size, and finish-drying sclerosis back is stand-by, with high-purity Al of internal diameter Φ 7.0mm
2O
3Thin-wall ceramic pipe is as formwork, and the mother alloy rod assembly of handling well is packed in the vitrified pipe, and oriented growth in the directed stove of packing into can obtain monocrystalline.
Embodiment 2: with Ni
3Al base alloy Ni-16.6Al-7Cr-0.4Zr alloy melting is cast as the mother alloy rod of Φ 8mm, the necking down of being processed into out Φ 1.5mm at the 20mm place, and all the other processes are identical with embodiment 1.
Fig. 2 is the photo in kind of above-mentioned two embodiment.
Claims (2)
1. the technology of preparing of a nickel-aluminum base alloy monocrystalline, system adopts the way of oriented growth, comprise the preparation of mother alloy sample, it is characterized in that: the necking down that on the 20-40mm of distance mother alloy sample bottom, processes one 10～20mm, necking section is repeatedly filled with ceramic coating and is dry and after being crystal selector, integral body is put into ceramic shell mould, remelting and oriented growth in directional solidification furnace.
2. by the technology of preparing of the described nickel-aluminum base alloy monocrystalline of claim 1, it is characterized in that: described necking down is shaped as circle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN95110277A CN1055142C (en) | 1995-06-07 | 1995-06-07 | Technology for preparation of metal material single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN95110277A CN1055142C (en) | 1995-06-07 | 1995-06-07 | Technology for preparation of metal material single crystal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1137577A CN1137577A (en) | 1996-12-11 |
| CN1055142C true CN1055142C (en) | 2000-08-02 |
Family
ID=5077678
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN95110277A Expired - Fee Related CN1055142C (en) | 1995-06-07 | 1995-06-07 | Technology for preparation of metal material single crystal |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1055142C (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100494467C (en) * | 2006-08-16 | 2009-06-03 | 中国科学院金属研究所 | Directional freezing column crystal or single-crystal nickel-base high-temperature alloy repairing or coating method |
| CN100557092C (en) * | 2007-12-17 | 2009-11-04 | 北京航空航天大学 | Adopt the method for seed crystal method and spiral crystal separation method combined preparation Ni based single-crystal high-temperature alloy |
| CN102166643B (en) * | 2011-03-30 | 2013-07-24 | 江苏中欧材料研究院有限公司 | Method for preventing monocrystal blades from having mixed crystal defects |
| CN102205391B (en) * | 2011-04-28 | 2012-11-28 | 上海交通大学 | Device and method for manufacturing spiral grain selection device for high-temperature alloy single crystal growth |
-
1995
- 1995-06-07 CN CN95110277A patent/CN1055142C/en not_active Expired - Fee Related
Non-Patent Citations (1)
| Title |
|---|
| REV.SCI.INSRT 1953.1.1 T.S.NOGGLE * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1137577A (en) | 1996-12-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0949358B1 (en) | Mold for producing silicon ingot and method for fabricating the same | |
| NO20110755A1 (en) | Methods for Preparing a Melt of Silicon Powder for Silicon Crystal Growth | |
| CN1055142C (en) | Technology for preparation of metal material single crystal | |
| NO317080B1 (en) | Silicon nitride crucibles resistant to silicon melts and processes for making such crucibles | |
| EP1571240A3 (en) | Method for producing compound semiconductor single crystal | |
| CN1061704C (en) | Technique for preparing monocrystal of metal material | |
| EP0405362A1 (en) | Method for manufacturing alloy rod having giant magnetostriction | |
| US4854968A (en) | Method of preparing high-purity metal and rotary cooling member for use in apparatus therefor | |
| AU2005245291B2 (en) | Cooled lump from molten silicon and process for producing the same | |
| US3853489A (en) | A non-wetting aid for growing crystalline bodies | |
| US5161602A (en) | Graphite mold for single crystal growth of active materials and a process for manufacturing the same | |
| CN211036174U (en) | Crystal growth device | |
| CN1332070C (en) | Structure of initiating terminal in directional solidification in method of seed crystal, and application | |
| CN208440720U (en) | A kind of quantity-produced zone melting furnace | |
| JPH0764672B2 (en) | Crystal growth equipment | |
| JPH0337181A (en) | Production of big magnetostrictive alloy rod composed of rare earth metal and transition metal | |
| CN216274454U (en) | Crucible for directional growth of fluoride crystal | |
| CN215491015U (en) | Alloy vacuum melting experimental device | |
| JP2864058B2 (en) | Quartz crucible for pulling silicon single crystal | |
| Wang Q.-d. et al. | Step growth of a primary silicon crystal observed by decantation during centrifugal casting | |
| RU2070476C1 (en) | Apparatus for production of monocrystal castings | |
| JPS58104100A (en) | Growth process for smco5 single crystal | |
| Morimoto et al. | High speed single crystal casting technique | |
| JPS63277589A (en) | Structure for holding seed crystal for single crystal growth | |
| EP1132503A3 (en) | Process and apparatus for producing oxide single crystals |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |