CN105511120B - Silicon-based electro-optical modulator tilted PN-junction doped structure - Google Patents
Silicon-based electro-optical modulator tilted PN-junction doped structure Download PDFInfo
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 36
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 36
- 239000010703 silicon Substances 0.000 title claims abstract description 36
- 239000011162 core material Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 10
- 239000004020 conductor Substances 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 4
- 238000005265 energy consumption Methods 0.000 abstract description 21
- 238000013461 design Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 230000001154 acute effect Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000005457 optimization Methods 0.000 description 5
- 238000004891 communication Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 238000000205 computational method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- -1 for example Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure
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- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
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Abstract
The present invention relates to a kind of silicon-based electro-optical modulator doped structure, which includes：Silicon-based electro-optical modulator modulator zone waveguide, the waveguide include the first heavily doped region, the second lightly doped district, third lightly doped district and the 4th heavily doped region successively along first direction；Second lightly doped district forms at least one fore-and-aft tilt PN junction and at least one lateral inclination PN junction with the third lightly doped district, described longitudinally perpendicular in the transverse direction；It is described it is longitudinal between the first direction be in the first angle, first angle be more than 0 ° and be less than 90 °.The present invention can reduce modulation energy consumption while improving the modulation efficiency of silicon-based electro-optical modulator, and each doped region of waveguide cores heart district can be made can be directly electrically connected by lateral waveguide realization, ensure system high-speed modulating performance.
Description
Technical field
The present invention relates to technical field of semiconductors more particularly to a kind of silicon-based electro-optical modulator tilted PN-junction doped structures.
Background technology
As communication interconnects the development trend that speed-raising drop is taken, mass communication and interconnection equipment update, silicon substrate transceiver
System has begun commercialization, but system energy consumption is high, and the pressure of the infrastructure to communicating, interconnecting increased dramatically.Modulator is light
The significant components of transceiver in communication, optical interconnection system, its energy consumption is only second to laser, but modulator itself Insertion Loss also increases
Power budgets, so being the important tackling key problem object in the current effort for reducing energy consumption.
Modulation efficiency and modulation energy consumption are all performance indicators important in communication system, and modulation efficiency is in device size and drive
It directly plays a role in terms of dynamic voltage, and it is the measurement for consuming electric energy to modulate energy consumption then.Next-generation transceiver is wished in modulation energy
Consumption and two aspect of modulation efficiency can realize that performance is substantially improved, and specially designed slotting finger knot is then more promising technology
Scheme, but reflect the difficulty that modulation efficiency, modulation energy consumption can not get both.So realizing high modulate efficiency, low modulation simultaneously
The modulator of energy consumption be the next-generation transceiver technology of developing there is an urgent need to.In addition, in existing slotting finger knot technical solution, adopt more
(it is higher than in such as ridge waveguide flat with vertical PN junction doped structure, such as the slotting waveguide cores heart district that extends perpendicularly to for referring to knot
Be higher than the raised line area of grating region in the raised line area in plate area, side wall grating waveguide) extending direction or the doping plane of PN junction hang down
The directly plane where lateral waveguide (the tablet area of such as ridge waveguide, the grating region of side wall grating waveguide), limits to a certain extent
The junction region of PN junction, and then cause to modulate energy consumption larger.
To sum up, the doped structure for how improving traditional silicon-based electro-optical modulator, to ensure modulation efficiency, modulation energy consumption and performance
It is promoted, becomes one of a technical problem to be solved urgently.
Invention content
In order to solve the above technical problems, the present invention proposes a kind of silicon-based electro-optical modulator tilted PN-junction doped structure, it should
Doped structure includes：
Silicon-based electro-optical modulator modulator zone waveguide, the waveguide include the first heavily doped region, second successively along first direction
Lightly doped district, third lightly doped district and the 4th heavily doped region；
Second lightly doped district and the third lightly doped district form at least one fore-and-aft tilt PN junction and at least one
Lateral inclination PN junction, it is described longitudinally perpendicular in the transverse direction；It is described it is longitudinal between the first direction be in the first angle, it is described
First angle is more than 0 ° and is less than 90 °；
Wherein, the doping type of first heavily doped region is identical as the doping type of the second lightly doped district；It is described
The doping type of first heavily doped region is opposite with the doping type of the 4th heavily doped region；The doping of the third lightly doped district
Type is identical as the doping type of the 4th heavily doped region.
Preferably, the doping plane of the fore-and-aft tilt PN junction and/or the doping plane of the lateral inclination PN junction and the
It is in the second angle between one plane, second angle is more than 0 ° and is less than 90 °；
Wherein, first plane is the plane that the direction of propagation of light is determined with the first direction in the waveguide.
Preferably, second lightly doped district is electrically connected by first heavily doped region；
The third lightly doped district is electrically connected by the 4th heavily doped region.
Preferably, the waveguide is ridge waveguide, and first heavily doped region and the 4th heavily doped region are respectively formed in institute
It states in the tablet area or raised line area of the both sides in raised line area, second lightly doped district and third lightly doped district are formed in the raised line
In area and the tablet area.
Preferably, the waveguide is side wall grating waveguide, and first heavily doped region and the 4th heavily doped region are respectively formed
In on the grating region of the both sides in the raised line area, second lightly doped district and third lightly doped district be formed in the raised line area and
On the grating region.
Preferably, every in first heavily doped region, the second lightly doped district, third lightly doped district and the 4th heavily doped region
The doping shape in one region is the polygon that any interior angle is not less than 70 °.
Preferably, second lightly doped district, which forms to insert with the third lightly doped district, refers to junction structure.
Preferably, first heavily doped region and the 4th heavily doped region connect driving circuit respectively.
Preferably, the shape of the waveguide is bending or un-flexed along the direction of light propagation.
Preferably, the core material of the waveguide is semi-conducting material；The clad material of the waveguide is poor conductor material
Material.
The silicon-based electro-optical modulator tilted PN-junction doped structure of the present invention, can be in the modulation for improving silicon-based electro-optical modulator
Modulation energy consumption is reduced while efficiency, overcomes the modulation efficiency of traditional silicon-based electro-optical modulator and modulates what power consumption can not get both
Difficulty, and each doped region of waveguide cores heart district can be made can be directly electrically connected by lateral waveguide realization, ensure system
High Speed Modulation performance.
Description of the drawings
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technology description to be briefly described, it should be apparent that, the accompanying drawings in the following description is the present invention
Some embodiments for those of ordinary skill in the art without creative efforts, can also basis
These attached drawings obtain other attached drawings.
Fig. 1-a show the vertical view of the silicon-based electro-optical modulator tilted PN-junction doped structure of one embodiment of the invention；
Fig. 1-b show that the cross section of the silicon-based electro-optical modulator tilted PN-junction doped structure of one embodiment of the invention shows
It is intended to；
Fig. 2 shows the cross sections of the silicon-based electro-optical modulator tilted PN-junction doped structure of another embodiment of the present invention to show
It is intended to；
Fig. 3 shows that the cross section of the silicon-based electro-optical modulator tilted PN-junction doped structure of another embodiment of the present invention shows
It is intended to；
Fig. 4 shows that tradition inserts the silicon-based electro-optical modulator doped structure schematic diagram for referring to junction structure；
Fig. 5-a to Fig. 5-b show the silicon-based electro-optical modulator tilted PN-junction doped structure of one embodiment of the invention
Optimize schematic diagram data；
Fig. 6-a to Fig. 6-b show the silicon-based electro-optical modulator tilted PN-junction doped structure of one embodiment of the invention
Performance schematic diagram；
Fig. 7-a to Fig. 7-c show three kinds of silicon-based electro-optical modulator tilted PN-junctions doping of another embodiment of the present invention
The waveguide cores heart district schematic diagram of structure.
Specific implementation mode
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical solution in the embodiment of the present invention is explicitly described, it is clear that described embodiment is the present invention
A part of the embodiment, instead of all the embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art are not having
The every other embodiment obtained under the premise of creative work is made, shall fall within the protection scope of the present invention.
Fig. 1-a, Fig. 1-b respectively illustrate the silicon-based electro-optical modulator tilted PN-junction doped structure of one embodiment of the invention
Vertical view and cross-sectional view；As shown in Fig. 1-a, Fig. 1-b, which includes：
Silicon-based electro-optical modulator modulator zone waveguide 100, the waveguide 100 include the first heavily doped region successively along first direction
110, the second lightly doped district 120, third lightly doped district 130 and the 4th heavily doped region 140；
Second lightly doped district 120 forms at least fore-and-aft tilt PN junction and at least one with the third lightly doped district 130
A lateral inclination PN junction, it is described longitudinally perpendicular in the transverse direction；It is described it is longitudinal between the first direction be in the first angle, institute
It is the acute angle more than 0 ° and less than 90 ° to state the first angle；
Wherein, the doping type phase of the doping type of first heavily doped region 110 and second lightly doped district 120
Together；The doping type of first heavily doped region 110 is opposite with the doping type of the 4th heavily doped region 140；The third
The doping type of lightly doped district 130 is identical as the doping type of the 4th heavily doped region 140.It specifically, can be by described
One heavily doped region 110, the second lightly doped district 120, third lightly doped district 130 and the 4th heavily doped region 140 are respectively set to N+
+, the area N, P, P++；Alternatively, can by first heavily doped region 110, the second lightly doped district 120, third lightly doped district 130 with
And the 4th heavily doped region 140 area P++, P, N, N++ (not shown) is respectively set.
The doped structure of the silicon-based electro-optical modulator of the present embodiment, can be in the modulation efficiency for improving silicon-based electro-optical modulator
While reduce modulation energy consumption, overcome the modulation efficiency of traditional silicon-based electro-optical modulator and modulation power consumption can not get both it is tired
Difficulty, and each doped region of waveguide cores heart district can be made can be directly electrically connected by lateral waveguide realization, ensure that system is high
Rate modulation performance.
Optionally, second lightly doped district 120 is electrically connected by first heavily doped region 110；Described
Three lightly doped districts 130 are electrically connected by the 4th heavily doped region 140；First heavily doped region 110 and the 4th heavy doping
Area 140 connects driving circuit respectively.
As the preferred of the present embodiment, the waveguide can be selected as ridge waveguide or side wall grating waveguide：
If the waveguide is ridge waveguide, first heavily doped region, 110 and the 4th heavily doped region 140 is respectively formed in
On the tablet area of the both sides in the raised line area or raised line area (referring to Fig. 2), second lightly doped district 120 and third lightly doped district
130 are formed in the raised line area and the tablet area；
If the waveguide is side wall grating waveguide, first heavily doped region, 110 and the 4th heavily doped region 140 distinguishes shape
On the grating region of the both sides in raised line area described in Cheng Yu, second lightly doped district 120 and third lightly doped district 130 are formed in described
In raised line area and the grating region.
Waveguide pattern in above-described embodiment is all made of the optical waveguide that can be realized and be electrically connected, and removes ridge waveguide and side wall
Except grating waveguide, it can also use and realize waveguiding structure (this being electrically connected using conductive clad material on waveguide periphery
The conductive clad material at place refers to the subregion conductive material in covering, and other parts still use poor conductor material).
Particularly, the vertical paper of the upper and lower directions of vertical view as shown in Fig. 1-a and the cross-sectional view as shown in Fig. 1-b
Face direction is the direction of propagation of light.
First heavily doped region 110 of both sides and the 4th heavily doped region 140 are light with the second lightly doped district 120 and third respectively
Doped region 130 is connected, and realizes being electrically connected for low connection resistance.The features of shape being lightly doped is that laterally consumption is formed between inserting finger
Area to the greatest extent inserts the end face referred to and forms longitudinal depletion region, and the two exists simultaneously.
Fig. 3 shows that the cross section of the silicon-based electro-optical modulator tilted PN-junction doped structure of another embodiment of the present invention shows
It is intended to；As shown in figure 3, the doping plane of the fore-and-aft tilt PN junction can be in the second angle between the first plane, described second
Angle is the acute angle more than 0 ° and less than 90 °；Wherein, first plane is the direction of propagation of light and described the in the waveguide
The plane that one direction determines；
And/or the doping plane of the lateral inclination PN junction can be in the second angle between the first plane, second folder
Angle is the acute angle (not shown) more than 0 ° and less than 90 °.
As shown in Fig. 1-a, Fig. 1-b, second lightly doped district 120 in the present embodiment and the third lightly doped district
130 doped structures formed, which can be inserted preferably, refers to junction structure, the structure not only have traditional slotting finger junction structure (referring to Fig. 4,
Wherein I is intrinsic region) silicon-based electro-optical modulator doped structure possessed by longitudinal P N knot, and formed inserting the end face for referring to knot
Transverse p/n junction.Further, it is provided in above-described embodiment and forms PN junction between the second lightly doped district, third lightly doped district, it is real
Because of the technological reason of doping on border, always there is intrinsic region (areas I) before P and N, thus technical scheme of the present invention to this not
It is defined, i.e., can also cover the case where there are intrinsic regions between P/N is lightly doped.
Preferably, first heavily doped region 110, the second lightly doped district 120, third lightly doped district 130 and quadruple
The doping shape in each region is the polygon (preferably rectangular) that any interior angle is not less than 70 ° in doped region 140.Using this
The reason of shape, which is the minimum doping size of design rule restriction of doping process and spacing, acute angle, can violate design rule, practical
The figure processed can be truncated at acute angle, be still polygon.
As the preferred of the present embodiment, the shape of the waveguide is bending or un-flexed along the direction of light propagation.
On this basis, the core material of the waveguide is semi-conducting material, for example, silicon or germanium, the clad material of waveguide
For poor conductor material, for example, silica or silicon nitride.
The performance of the silicon-based electro-optical modulator doped structure of the present embodiment is elaborated below by specific experiment result.
As shown in Fig. 1-b, the concrete structure parameter of waveguide used by this example is, for example,：
W1=450nm；W2=700nm；h1=220nm；h2=90nm.
On this basis, Fig. 5-a to Fig. 5-b show the silicon-based electro-optical modulator tilted PN-junction of one embodiment of the invention
The optimization schematic diagram data of doped structure.The present embodiment doped structure design key be structural parameters offset to be determined and
The size of inclined angle alpha (i.e. the complementary angle of the first angle, referring to Fig. 1-a).As shown in Fig. 5-a, Fig. 5-b, contour line (is marked on side in figure
Note number ringed line) corresponding to data value it is smaller, i.e., energy consumption is lower, V π L π lower (modulation efficiency is more excellent).Plus sige in figure "
+ " position be optimum point, the curves of two mark 210nm are meant that in Fig. 5-a：Other than two curve scopes
Region (lower section of the above and below curve of upper graph), the structural parameters of device do not violate the design rule of processing.Especially
It is explanatorily that the design rule of processing is determined according to process equipment, so being herein an example, shows the present embodiment
Optimization process consider the factor of fabrication design rule.
On this basis, Fig. 6-a to 6-b show that the silicon-based electro-optical modulator tilted PN-junction of one embodiment of the invention is mixed
The performance schematic diagram of miscellaneous structure.As shown in Fig. 6-a to Fig. 6-b, the key of the doped structure design of the present embodiment is to determine knot
The size of structure parameter offset (referring to Fig. 1-a) can obtain the number as shown in Fig. 6-a to 6-b by conventional emulation mode
According to illustrating pattern effective refractive index variable quantity (Δ neff) in the one of structural parameters of fixation, modulation efficiency successively
With the curve graph that totally disappeared light modulation energy consumption.Wherein, the minimum doping size done used in figure is Lmin=210nm (referring to Fig. 1-a).
In the present embodiment, modulation energy consumption is the modulation arm with 1mm long, between 0V and -1V recommend the full-dull (0%- of modulation
100%) energy consumption is modulated, modulation efficiency refers to a modulation arm at 0V and -1V quiescent voltages, when another modulation arm no-voltage
The product (V π L π) of π phase displaced voltages V π and modulation brachium L π required under this voltage.In actual design, modulation energy consumption, modulation effect
The computational methods of rate can flexibly change according to actual requirement, be not limited to the computational methods of the present embodiment.From Fig. 6-a to 6-b
In it is observed that when fixed structure parameter offset or constant tilt angle α, the performance of Δ neff is with another structural parameters
And become, there are achievable optimal values.It is given directly below the knot for being carried out at the same time optimization in the present embodiment to above-mentioned two parameter
Fruit：Obtain by optimal energy optimization [α, offset, V π L π (modulation efficiency), E (modulation energy consumption)]=[25.3 °, 140nm,
0.48V·cm,2.75pJ/bit]；By optimal modulation efficiency optimization obtain [α, offset, V π L π, E]=[30.3 °, 200nm,
0.45V·cm,3.04pJ/bit].Under conditions of the present embodiment, the performance laterally tied of tradition be only [0.60Vcm,
4.31pJ/bit].Compared with prior art, caused good effect is in modulation efficiency and modulation two side of energy consumption to the present embodiment
Face while improving performance.
Fig. 7-a to Fig. 7-c show three kinds of silicon-based electro-optical modulator tilted PN-junctions doping of another embodiment of the present invention
The waveguide cores heart district schematic diagram of structure；As shown in Fig. 7-a to Fig. 7-c, the part in figure between two black lines is waveguide core
Area is (such as higher than the raised line area for being higher than grating region in the raised line area in tablet area or side wall grating waveguide in ridge waveguide, referring to figure
Size is W in 1-a, Fig. 1-b1Two vertical line parts), the structure that is electrically connected of waveguide both sides is not drawn into.Fig. 7-a, Fig. 7-b institutes
The two kinds of structures shown be respectively offset be zero, the doped structure of non-zero, they with Fig. 1-a, the difference of the doped structure of Fig. 1-b
It is that, along the direction of propagation of light difference, the polarity of PN junction has also carried out alternately changing.The characteristics of doped structure of Fig. 7-c is,
Fig. 1-a, Fig. 1-b doped structure on the basis of, enable its left side translate up, right side translates downwards, you can increase P/N between connect
Junction it is raised or sunken so that light changes overlapping more efficient with depletion region.
The duct height direction of above-described embodiment is both preferably uniform doping, but is also chosen as doping heterogeneous, example
As in Fig. 1-b on the cross-sectional view of waveguide, two side areas is respectively N on N and lower P under upper P.
Further, it is provided in above-described embodiment and forms PN junction between the second lightly doped district, third lightly doped district, it is practical
It is upper because doping technological reason, always there is intrinsic region (areas I) before P and N, thus technical scheme of the present invention to this not into
Row limits, i.e., can also cover the case where there are intrinsic regions between P/N is lightly doped.
Modulation efficiency, modulation energy consumption and performance has may be implemented in the doped structure of the silicon-based electro-optical modulator of the present invention
It is promoted, and each doped region of waveguide cores heart district can be made can be directly electrically connected by lateral waveguide realization, ensure system
High Speed Modulation performance.
It should be noted that the doped structure of the present embodiment is periodic structure along the direction of propagation of Waveguide, it is above-mentioned attached
It has only drawn the example in two periods in figure, in actual design, can flexibly change as desired.
Above example is only used to illustrate the technical scheme of the present invention, rather than its limitations；Although with reference to the foregoing embodiments
Invention is explained in detail, it will be understood by those of ordinary skill in the art that：It still can be to aforementioned each implementation
Technical solution recorded in example is modified or equivalent replacement of some of the technical features；And these are changed or replace
It changes, the spirit and scope for various embodiments of the present invention technical solution that it does not separate the essence of the corresponding technical solution.
Claims (9)
1. a kind of silicon-based electro-optical modulator tilted PN-junction doped structure, which is characterized in that including：
Silicon-based electro-optical modulator modulator zone waveguide, the waveguide are gently mixed including the first heavily doped region, second successively along first direction
Miscellaneous area, third lightly doped district and the 4th heavily doped region；
Second lightly doped district forms at least one fore-and-aft tilt PN junction and at least one transverse direction with the third lightly doped district
Tilted PN-junction, it is described longitudinally perpendicular in the transverse direction；It is described it is longitudinal between the first direction be in the first angle, described first
Angle is more than 0 ° and is less than 90 °；The doping plane of the doping plane of the fore-and-aft tilt PN junction and/or the lateral inclination PN junction
It is in the second angle between the first plane, for second angle more than 0 ° and less than 90 °, first plane is in the waveguide
The plane that the direction of propagation of light is determined with the first direction；
Wherein, the doping type of first heavily doped region is identical as the doping type of the second lightly doped district；Described first
The doping type of heavily doped region is opposite with the doping type of the 4th heavily doped region；The doping type of the third lightly doped district
It is identical as the doping type of the 4th heavily doped region.
2. doped structure as described in claim 1, which is characterized in that second lightly doped district passes through first heavy doping
Area is electrically connected；
The third lightly doped district is electrically connected by the 4th heavily doped region.
3. doped structure as described in claim 1, which is characterized in that the waveguide is ridge waveguide, first heavy doping
Area and the 4th heavily doped region are respectively formed in tablet area or the raised line area of the both sides in raised line area, second lightly doped district and
Three lightly doped districts are formed in the raised line area and the tablet area.
4. doped structure as described in claim 1, which is characterized in that the waveguide is side wall grating waveguide, first weight
On the grating region for the both sides that doped region and the 4th heavily doped region are respectively formed in raised line area, second lightly doped district and third are light
Doped region is formed on the raised line area and the grating region.
5. doped structure as described in claim 1, which is characterized in that first heavily doped region, the second lightly doped district, third
The doping shape in each region is the polygon that any interior angle is not less than 70 ° in lightly doped district and the 4th heavily doped region.
6. doped structure as described in claim 1, which is characterized in that second lightly doped district and the third lightly doped district
It is formed to insert and refers to junction structure.
7. doped structure as described in claim 1, which is characterized in that first heavily doped region and the 4th heavily doped region
Driving circuit is connect respectively.
8. doped structure as described in claim 1, which is characterized in that the shape of the waveguide is curved along the direction of light propagation
It is bent or un-flexed.
9. doped structure as described in claim 1, which is characterized in that the core material of the waveguide is semi-conducting material；Institute
The clad material for stating waveguide is poor conductor material.
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| CN111051969B (en) * | 2017-09-11 | 2021-10-26 | 华为技术有限公司 | Phase modulator, manufacturing method thereof and silicon-based electro-optical modulator |
| CN117930530A (en) * | 2018-01-26 | 2024-04-26 | 希尔纳公司 | Silicon-based modulator with optimized doping profile and different transition region thicknesses |
| US10845670B2 (en) | 2018-08-17 | 2020-11-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Folded waveguide phase shifters |
| CN111367131B (en) * | 2018-12-26 | 2022-12-02 | 中兴光电子技术有限公司 | Silicon-based modulator and modulation device |
| US10901296B1 (en) * | 2019-09-23 | 2021-01-26 | International Business Machines Corporation | Electro-optical device with active electro-optical waveguide structure |
| CN110941108A (en) * | 2019-12-30 | 2020-03-31 | 杭州芯耘光电科技有限公司 | Doping structure and optical modulator |
| CN113900279A (en) * | 2020-06-22 | 2022-01-07 | 浙江大学 | Silicon-based electro-optic modulator doping structure |
| CN115685444B (en) * | 2022-11-09 | 2024-06-11 | 希烽光电科技(南京)有限公司 | Compensation doping method of silicon-based electro-optic modulator and silicon-based electro-optic modulator |
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