CN105511119A - Doping structure of silicon-substrate electrooptical modulator - Google Patents
Doping structure of silicon-substrate electrooptical modulator Download PDFInfo
- Publication number
- CN105511119A CN105511119A CN201610028017.7A CN201610028017A CN105511119A CN 105511119 A CN105511119 A CN 105511119A CN 201610028017 A CN201610028017 A CN 201610028017A CN 105511119 A CN105511119 A CN 105511119A
- Authority
- CN
- China
- Prior art keywords
- doped region
- waveguide
- heavily doped
- doping section
- light doping
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title abstract 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 33
- 229910052710 silicon Inorganic materials 0.000 claims description 33
- 239000010703 silicon Substances 0.000 claims description 33
- 230000005611 electricity Effects 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 14
- 239000011162 core material Substances 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 238000005452 bending Methods 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 230000000644 propagated effect Effects 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 238000005265 energy consumption Methods 0.000 abstract description 21
- 238000004891 communication Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000013461 design Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000001154 acute effect Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000013519 translation Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/10—Materials and properties semiconductor
- G02F2202/103—Materials and properties semiconductor a-Si
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Optical Integrated Circuits (AREA)
Abstract
The invention relates to a doping structure of a silicon-substrate electrooptical modulator. The doping structure comprises a silicon-substrate electrooptical modulator modulating region waveguide, and the waveguide sequentially comprises a first heavily-doped region, a second lightly-doped region, a third lightly-doped region and a fourth heavily-doped region in the transverse direction which is perpendicular to the extending direction of a protruding strip region of the waveguide. The second lightly-doped region and the third lightly-doped region form at least one longitudinal PN junction and at least one transverse PN junction, and the longitudinal direction is perpendicular to the transverse direction. The second lightly-doped region is in electric connection through the first heavily-doped region, and the third lightly-doped region is in electric connection through the fourth heavily-doped region. By means of the doping structure of the silicon-substrate electrooptical modulator, modulation energy consumption can be reduced while the modulation efficiency of the silicon-substrate electrooptical modulator is improved, each doped region of a waveguide core region can directly achieve electric connection through a lateral waveguide, and the high-speed modulation performance of the system is ensured.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly relate to a kind of silicon-based electro-optical modulator doped structure.
Background technology
Along with the development trend of expense falls in the interconnected speed-raising of communication, mass communication and interconnect equipment update, and silica-based transceiver system starts commercialization, but system energy consumption is high, sharply increase the pressure of the infrastructure of communication, interconnection.Modulator is the significant components of transceiver in optical communication, optical interconnection system, and its energy consumption is only second to laser instrument, but modulator self Insertion Loss too increases Power budgets, so be the important tackling key problem object reduced at present in the effort of energy consumption.
The doped structure of traditional silicon electrooptic modulator mainly contains two kinds: side direction knot and slotting finger tie.Insert and refer to that the modulation efficiency of knot is tied higher than side direction, but modulation energy consumption is higher, reflect modulation efficiency, the modulation energy consumption difficulty that can not get both.In fact, modulation efficiency and modulation energy consumption are all performance index important in communication system, and modulation efficiency directly plays a role in device size and driving voltage, and modulating energy consumption is then consume measuring of electric energy.So realize high modulate efficiency simultaneously, the modulator of low modulation energy consumption be developing transceiver technology of future generation in the urgent need to.In addition, in existing slotting finger knot technical scheme, in order to improve the photoelectricity modulation efficiency of silicon-based modulator, usually the doped structure improved in the waveguide of modulator is needed, but likely make waveguide core district (higher than the raised line district in dull and stereotyped district in such as ridge waveguide, or higher than the raised line district of grating region in sidewall grating waveguide) in clip and directly cannot realize by side direction waveguide (as the dull and stereotyped district of ridge waveguide or the grating region of sidewall grating waveguide) doped region that electricity connects, when causing High Speed Modulation, performance declines to a great extent.
To sum up, how a kind of doped structure of silicon-based electro-optical modulator is provided, to overcome modulation efficiency, the modulation energy consumption difficulty that can not get both of traditional silicon-based electro-optical modulator, and can guarantee that each doped region in waveguide core district all directly can realize electricity by side direction waveguide and connect, become one of technical matters urgently to be resolved hurrily at present.
Summary of the invention
For solving the problems of the technologies described above, the present invention proposes a kind of silicon-based electro-optical modulator doped structure, this doped structure comprises:
The waveguide of silicon-based electro-optical modulator modulator zone, described waveguide transversely comprises the first heavily doped region, the second light doping section, the 3rd light doping section and the 4th heavily doped region successively, and described transverse direction is perpendicular to the raised line district bearing of trend of described waveguide;
Described second light doping section and described 3rd light doping section form at least one longitudinal P N and tie and at least one transverse p/n junction, and described longitudinal direction is perpendicular to described transverse direction;
Electricity connection is carried out by described first heavily doped region in described second light doping section;
Electricity connection is carried out by described 4th heavily doped region in described 3rd light doping section;
Wherein, the doping type of described first heavily doped region is identical with the doping type of described second light doping section; The doping type of described first heavily doped region is contrary with the doping type of described 4th heavily doped region; The doping type of described 3rd light doping section is identical with the doping type of described 4th heavily doped region.
Preferably, described waveguide is ridge waveguide, in the dull and stereotyped district that described first heavily doped region and the 4th heavily doped region are formed at the both sides in described raised line district respectively or raised line district, described second light doping section and the 3rd light doping section are formed in described raised line district and described dull and stereotyped district.
Preferably, described waveguide is sidewall grating waveguide, and described first heavily doped region and the 4th heavily doped region are formed on the grating region of the both sides in described raised line district respectively, and described second light doping section and the 3rd light doping section are formed on described raised line district and described grating region.
Preferably, in described first heavily doped region, the second light doping section, the 3rd light doping section and the 4th heavily doped region, the doping shape in each region is the polygon that arbitrary interior angle is not less than 70 °.
Preferably, described second light doping section and described 3rd light doping section are formed to insert and refer to junction structure.
Preferably, described first heavily doped region and described 4th heavily doped region connect driving circuit respectively.
Preferably, the shape of described waveguide is bending or un-flexed along the direction that light is propagated.
Preferably, the core material of described waveguide is semiconductor material.
Preferably, the clad material of described waveguide is poor conductor material.
Preferably, the core material of described waveguide is silicon or germanium, and the clad material of described waveguide is silicon dioxide or silicon nitride.
The doped structure of silicon-based electro-optical modulator of the present invention, modulation energy consumption can be reduced while the modulation efficiency improving silicon-based electro-optical modulator, the difficulty that the modulation efficiency overcoming traditional silicon-based electro-optical modulator can not get both with modulation power consumption, and each doped region in waveguide core district can be made all directly can to realize electricity connection by side direction waveguide, ensure system high-speed modulating performance.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1-a, Fig. 1-b respectively illustrate vertical view and the cross sectional representation of the silicon-based electro-optical modulator doped structure of one embodiment of the invention;
Fig. 2 respectively illustrates the cross sectional representation of the silicon-based electro-optical modulator doped structure of another embodiment of the present invention;
Fig. 3 shows tradition and inserts the silicon-based electro-optical modulator doped structure schematic diagram referring to junction structure;
Fig. 4-a to Fig. 4-c shows the performance schematic diagram of the silicon-based electro-optical modulator doped structure of one embodiment of the invention;
Fig. 5-a to Fig. 5-c shows three kinds of silicon-based electro-optical modulator doped structure schematic diagram of another embodiment of the present invention.
Embodiment
For making the object of the embodiment of the present invention, technical scheme and advantage clearly, below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly described, obviously, described embodiment is the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
Fig. 1-a, Fig. 1-b respectively illustrate vertical view and the cross sectional representation of the silicon-based electro-optical modulator doped structure of one embodiment of the invention; As shown in Fig. 1-a, Fig. 1-b, this doped structure comprises:
Silicon-based electro-optical modulator modulator zone waveguide 100, described waveguide 100 transversely comprises the first light doping section 130, light doping section 120, second, heavily doped region 110, second and the 4th heavily doped region 140 successively, and described transverse direction is perpendicular to the raised line district bearing of trend of described waveguide;
Described second light doping section 120 forms at least one longitudinal P N with described second light doping section 130 and ties and at least one transverse p/n junction, and described longitudinal direction is perpendicular to described transverse direction;
Electricity connection is carried out by described first heavily doped region 110 in described second light doping section 120;
Electricity connection is carried out by described 4th heavily doped region 140 in described second light doping section 130;
Wherein, the doping type of described first heavily doped region 110 is identical with the doping type of described second light doping section 120; The doping type of described first heavily doped region 110 is contrary with the doping type of described 4th heavily doped region 140; The doping type of described second light doping section 130 is identical with the doping type of described 4th heavily doped region 140.Particularly, described first light doping section 120, heavily doped region 110, second, the 3rd light doping section 130 and the 4th heavily doped region 140 can be set to N++, N, P, P++ district respectively; Or, described first light doping section 120, heavily doped region 110, second, the 3rd light doping section 130 and the 4th heavily doped region 140 can be arranged P++, P, N, N++ district (not shown) respectively.
The doped structure of the silicon-based electro-optical modulator of the present embodiment, modulation energy consumption can be reduced while the modulation efficiency improving silicon-based electro-optical modulator, the difficulty that the modulation efficiency overcoming traditional silicon-based electro-optical modulator can not get both with modulation power consumption, and each doped region in waveguide core district can be made all directly can to realize electricity connection by side direction waveguide, ensure system high-speed modulating performance.
Alternatively, the first heavily doped region 110 and the 4th heavily doped region 140 connect driving circuit respectively.
Preferred as the present embodiment, described waveguide can elect ridge waveguide or sidewall grating waveguide as:
If described waveguide is ridge waveguide, then on described first heavily doped region 110 and the 4th heavily doped region 140 dull and stereotyped district that is formed at the both sides in described raised line district respectively or raised line district (see Fig. 2), described second light doping section 120 and the 3rd light doping section 130 are formed in described raised line district and described dull and stereotyped district;
If described waveguide is sidewall grating waveguide, then described first heavily doped region 110 and the 4th heavily doped region 140 are formed on the grating region of the both sides in described raised line district respectively, and described second light doping section 120 and the 3rd light doping section 130 are formed on described raised line district and described grating region.
Waveguide pattern in above-described embodiment all adopts the optical waveguide that can realize electricity and connect, except ridge waveguide and sidewall grating waveguide, can also adopt and utilize the clad material of conduction to realize the waveguiding structure (clad material of conduction herein refers to the subregion conductive material at covering, and other parts still use poor conductor material) of electricity connection at waveguide periphery.
Especially, the vertical paper direction of the above-below direction of the vertical view as shown in Fig. 1-a and the cross-sectional view as shown in Fig. 1-b is the direction of propagation of light.
First heavily doped region 110 of both sides is connected with the 3rd light doping section 130 with the second light doping section 120 respectively with the 4th heavily doped region 140, and the electricity realizing low contact resistance connects.Lightly doped features of shape inserts between finger to form having lateral depletion district, and insert the end face referred to and form longitudinal depletion region, the two exists simultaneously.
As shown in Fig. 1-a, Fig. 1-b, the doped structure that described second light doping section 120 in the present embodiment and described 3rd light doping section 130 are formed preferably can be inserted and refer to junction structure, this structure not only has traditional slotting finger junction structure (see Fig. 3, wherein I is intrinsic region) the longitudinal P N that has of silicon-based electro-optical modulator doped structure tie, and refer to that the end face of knot forms transverse p/n junction slotting.
In above-described embodiment, in described first light doping section 120, heavily doped region 110, second, the 3rd light doping section 130 and the 4th heavily doped region 140, the doping shape in each region is the polygon (being preferably rectangle) that arbitrary interior angle is not less than 70 °.Adopt the reason of this shape to be that the design rule of doping process limits minimum doping size and spacing, acute angle can violate design rule, and the actual figure processed can be truncated at acute angle place, remains polygon.
Preferred as the present embodiment, the shape of described waveguide is bending or un-flexed along the direction that light is propagated.
On this basis, the core material of described waveguide is semiconductor material, such as, be silicon or germanium, and the clad material of waveguide is poor conductor material, such as, be silicon dioxide or silicon nitride.
The performance of the silicon-based electro-optical modulator doped structure of the present embodiment is elaborated below by specific experiment result.
As shown in Fig. 1-b, the concrete structure parameter of the waveguide that this example adopts is such as:
W
1＝450nm；W
2＝700nm；h
1＝220nm；h
2＝90nm。
On this basis, Fig. 4-a to Fig. 4-c shows the performance schematic diagram of the silicon-based electro-optical modulator doped structure of one embodiment of the invention; As shown in Fig. 4-a to Fig. 4-c, the key of the doped structure design of the present embodiment to determine the size of structural parameters offset (see Fig. 1-a), the data as shown in figure Fig. 4-a to Fig. 4-c can be obtained by the emulation mode of routine, in turn, show the curve map of the pattern effective refractive index variable quantity (Δ neff) of unit length, modulation efficiency and full-dull modulation energy consumption.
Wherein, doing the figure doping cycle used is Lpitch=210nm.In the present embodiment, modulation energy consumption is with the long modulation arm of 1mm, the full-dull (0%-100%) carrying out recommending modulation between 0V and-1V modulates energy consumption, and modulation efficiency refers to that a modulation arm is under 0V and-1V quiescent voltage, result during another modulation arm no-voltage.In actual design, the computing method of modulation energy consumption, modulation efficiency can change flexibly according to actual requirement, are not limited to the computing method of the present embodiment.
Can observe from Fig. 4-b, Fig. 4-c, when structural parameters offset is about 160nm, the electrooptic modulator based on this doped structure realizes minimum energy consumption, and modulation energy consumption now, modulation efficiency are all better than traditional side direction knot.By contrast, although tradition is inserted refer to that knot can realize being better than the result of traditional side direction knot in modulation efficiency, modulation energy consumption can not be tied lower than traditional side direction.And the present embodiment compared with prior art, simultaneously the good effect brought realizes high modulate efficiency and low modulation energy consumption.
Fig. 5-a to Fig. 5-c shows three kinds of silicon-based electro-optical modulator doped structure schematic diagram of another embodiment of the present invention; As shown in Fig. 5-a to Fig. 5-c, the part in figure between two black lines is that waveguide core district (higher than the raised line district in dull and stereotyped district in such as ridge waveguide, or higher than the raised line district of grating region in sidewall grating waveguide, is of a size of W see in Fig. 1-a, Fig. 1-b
1two vertical line parts), the electricity syndeton of waveguide both sides does not draw.To be offset be respectively zero for Fig. 5-a, kind of the structure of two shown in Fig. 5-b, the doped structure of non-zero, and from the difference of the doped structure of Fig. 1-a, Fig. 1-b, they are that the direction of propagation along light is different, the polarity of PN junction has also carried out alternately change.The feature of the doped structure of Fig. 5-c is, on the basis of the doped structure of Fig. 1-a, Fig. 1-b, makes upwards translation on the left of it, the downward translation in right side, and can increase the raised or sunken of joint face between P/N, what light and depletion region were changed is overlapping more effective.
The duct height direction of above-described embodiment is all preferably uniform doping, but is also chosen as doping heterogeneous, and on the cross-sectional view of such as, in Fig. 1-b waveguide, two side areas is respectively N on N and lower P under upper P.
Further, provide in above-described embodiment between the second light doping section, the 3rd light doping section and form PN junction, in fact because the technological reason of doping, always intrinsic region (I district) is there is before P and N, therefore technical scheme of the present invention does not limit this, namely also can cover the situation that there is intrinsic region between doped with P/N.
The doped structure of silicon-based electro-optical modulator of the present invention, modulation energy consumption can be reduced while the modulation efficiency improving silicon-based electro-optical modulator, the difficulty that the modulation efficiency overcoming traditional silicon-based electro-optical modulator can not get both with modulation power consumption, and each doped region in waveguide core district can be made all directly can to realize electricity connection by side direction waveguide, ensure system high-speed modulating performance.
Above embodiment only for illustration of technical scheme of the present invention, is not intended to limit; Although with reference to previous embodiment to invention has been detailed description, those of ordinary skill in the art is to be understood that: it still can be modified to the technical scheme described in foregoing embodiments, or carries out equivalent replacement to wherein portion of techniques feature; And these amendments or replacement, do not make the essence of appropriate technical solution depart from the spirit and scope of various embodiments of the present invention technical scheme.
Claims (10)
1. a silicon-based electro-optical modulator doped structure, is characterized in that, comprising:
The waveguide of silicon-based electro-optical modulator modulator zone, described waveguide transversely comprises the first heavily doped region, the second light doping section, the 3rd light doping section and the 4th heavily doped region successively, and described transverse direction is perpendicular to the raised line district bearing of trend of described waveguide;
Described second light doping section and described 3rd light doping section form at least one longitudinal P N and tie and at least one transverse p/n junction, and described longitudinal direction is perpendicular to described transverse direction;
Electricity connection is carried out by described first heavily doped region in described second light doping section;
Electricity connection is carried out by described 4th heavily doped region in described 3rd light doping section;
Wherein, the doping type of described first heavily doped region is identical with the doping type of described second light doping section; The doping type of described first heavily doped region is contrary with the doping type of described 4th heavily doped region; The doping type of described 3rd light doping section is identical with the doping type of described 4th heavily doped region.
2. doped structure as claimed in claim 1, it is characterized in that, described waveguide is ridge waveguide, in the dull and stereotyped district that described first heavily doped region and the 4th heavily doped region are formed at the both sides in described raised line district respectively or raised line district, described second light doping section and the 3rd light doping section are formed in described raised line district and described dull and stereotyped district.
3. doped structure as claimed in claim 1, it is characterized in that, described waveguide is sidewall grating waveguide, described first heavily doped region and the 4th heavily doped region are formed on the grating region of the both sides in described raised line district respectively, and described second light doping section and the 3rd light doping section are formed on described raised line district and described grating region.
4. doped structure as claimed in claim 1, it is characterized in that, in described first heavily doped region, the second light doping section, the 3rd light doping section and the 4th heavily doped region, the doping shape in each region is the polygon that arbitrary interior angle is not less than 70 °.
5. doped structure as claimed in claim 1, is characterized in that, described second light doping section and described 3rd light doping section are formed to insert and refer to junction structure.
6. doped structure as claimed in claim 1, it is characterized in that, described first heavily doped region and described 4th heavily doped region connect driving circuit respectively.
7. doped structure as claimed in claim 1, it is characterized in that, the shape of described waveguide is bending or un-flexed along the direction that light is propagated.
8. doped structure as claimed in claim 1, it is characterized in that, the core material of described waveguide is semiconductor material.
9. doped structure as claimed in claim 8, it is characterized in that, the clad material of described waveguide is poor conductor material.
10. doped structure as claimed in claim 9, it is characterized in that, the core material of described waveguide is silicon or germanium, and the clad material of described waveguide is silicon dioxide or silicon nitride.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610028017.7A CN105511119A (en) | 2016-01-15 | 2016-01-15 | Doping structure of silicon-substrate electrooptical modulator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610028017.7A CN105511119A (en) | 2016-01-15 | 2016-01-15 | Doping structure of silicon-substrate electrooptical modulator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105511119A true CN105511119A (en) | 2016-04-20 |
Family
ID=55719213
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610028017.7A Pending CN105511119A (en) | 2016-01-15 | 2016-01-15 | Doping structure of silicon-substrate electrooptical modulator |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105511119A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109031706A (en) * | 2018-08-21 | 2018-12-18 | 南通赛勒光电科技有限公司 | A kind of doped structure of silicon-based electro-optical modulator |
| FR3069069A1 (en) * | 2017-07-11 | 2019-01-18 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | OPTICAL PHASE MODULATOR WITH SINUSOIDAL PN JUNCTION |
| WO2019047235A1 (en) * | 2017-09-11 | 2019-03-14 | 华为技术有限公司 | Phase modulator and fabrication method therefor, and silicon-substrate electro-optic modulator |
| CN110212053A (en) * | 2019-05-29 | 2019-09-06 | 哈尔滨工业大学（深圳） | A kind of silicon substrate interdigitation photodetector |
| CN110494800A (en) * | 2017-03-24 | 2019-11-22 | 洛克利光子有限公司 | Optical modulator |
| CN111610651A (en) * | 2020-07-10 | 2020-09-01 | 北京爱杰光电科技有限公司 | Silicon-based electro-optical modulator based on stress silicon and manufacturing method thereof |
| CN111785807A (en) * | 2020-08-11 | 2020-10-16 | 山东傲天环保科技有限公司 | PIN photoelectric device and manufacturing method thereof |
| WO2021048018A1 (en) * | 2019-09-09 | 2021-03-18 | Rockley Photonics Limited | Optoelectronic device and method of manufacturing an optoelectronic device |
| WO2021258583A1 (en) * | 2020-06-22 | 2021-12-30 | 浙江大学 | Doping structure of silicon-based electro-optic modulator |
| WO2022213889A1 (en) * | 2021-04-07 | 2022-10-13 | 华为技术有限公司 | Pn junction preparation method, pn junction and modulator |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1764863A (en) * | 2003-03-25 | 2006-04-26 | 斯欧普迪克尔股份有限公司 | High-speed silicon-based electro-optic modulator |
| US7085443B1 (en) * | 2003-08-15 | 2006-08-01 | Luxtera, Inc. | Doping profiles in PN diode optical modulators |
| CN103226252A (en) * | 2013-05-06 | 2013-07-31 | 中国科学院半导体研究所 | Doping structure capable of improving modulation efficiency of depletion silicon-based electrooptical modulator |
| CN204155033U (en) * | 2014-11-06 | 2015-02-11 | 江苏尚飞光电科技有限公司 | Silica-based photomodulator |
| CN104393133A (en) * | 2014-12-05 | 2015-03-04 | 武汉邮电科学研究院 | Doping structure for improving efficiency and bandwidth of silicon-based electro-optic tuning device |
| CN205485142U (en) * | 2016-01-15 | 2016-08-17 | 北京大学 | Silica -based electric optic modem doping structure |
-
2016
- 2016-01-15 CN CN201610028017.7A patent/CN105511119A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1764863A (en) * | 2003-03-25 | 2006-04-26 | 斯欧普迪克尔股份有限公司 | High-speed silicon-based electro-optic modulator |
| US7085443B1 (en) * | 2003-08-15 | 2006-08-01 | Luxtera, Inc. | Doping profiles in PN diode optical modulators |
| CN103226252A (en) * | 2013-05-06 | 2013-07-31 | 中国科学院半导体研究所 | Doping structure capable of improving modulation efficiency of depletion silicon-based electrooptical modulator |
| CN204155033U (en) * | 2014-11-06 | 2015-02-11 | 江苏尚飞光电科技有限公司 | Silica-based photomodulator |
| CN104393133A (en) * | 2014-12-05 | 2015-03-04 | 武汉邮电科学研究院 | Doping structure for improving efficiency and bandwidth of silicon-based electro-optic tuning device |
| CN205485142U (en) * | 2016-01-15 | 2016-08-17 | 北京大学 | Silica -based electric optic modem doping structure |
Non-Patent Citations (5)
| Title |
|---|
| GRAHAM T. REED等: "Recent breakthroughs in carrier depletion based silicon optical modulators", 《NANOPHOTONICS》 * |
| HUI YU等: "Performance tradeoff between lateral and interdigitated doping patterns for high speed carrier-depletion based silicon modulators", 《OPTICS EXPRESS》 * |
| MELISSA ZIEBELL等: "Ten Gbit/s ring resonator silicon modulator based on interdigitated PN junctions", 《OPTICS EXPRESS》 * |
| ZHI-YONG LI等: "Silicon waveguide modulator based on carrier depletion in periodically interleaved PN junctions", 《OPTICS LETTERS》 * |
| 周砚扬等: "一种基于交趾型PN结的Si基微盘电－光调制器", 《光电子·激光》 * |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110494800A (en) * | 2017-03-24 | 2019-11-22 | 洛克利光子有限公司 | Optical modulator |
| FR3069069A1 (en) * | 2017-07-11 | 2019-01-18 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | OPTICAL PHASE MODULATOR WITH SINUSOIDAL PN JUNCTION |
| US10409094B2 (en) | 2017-07-11 | 2019-09-10 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Optical phase modulator with sinusoidal PN junction |
| WO2019047235A1 (en) * | 2017-09-11 | 2019-03-14 | 华为技术有限公司 | Phase modulator and fabrication method therefor, and silicon-substrate electro-optic modulator |
| CN109031706A (en) * | 2018-08-21 | 2018-12-18 | 南通赛勒光电科技有限公司 | A kind of doped structure of silicon-based electro-optical modulator |
| CN110212053A (en) * | 2019-05-29 | 2019-09-06 | 哈尔滨工业大学（深圳） | A kind of silicon substrate interdigitation photodetector |
| WO2021048018A1 (en) * | 2019-09-09 | 2021-03-18 | Rockley Photonics Limited | Optoelectronic device and method of manufacturing an optoelectronic device |
| WO2021258583A1 (en) * | 2020-06-22 | 2021-12-30 | 浙江大学 | Doping structure of silicon-based electro-optic modulator |
| CN111610651A (en) * | 2020-07-10 | 2020-09-01 | 北京爱杰光电科技有限公司 | Silicon-based electro-optical modulator based on stress silicon and manufacturing method thereof |
| CN111610651B (en) * | 2020-07-10 | 2024-05-14 | 北京爱杰光电科技有限公司 | Silicon-based electro-optic modulator based on stress silicon and manufacturing method thereof |
| CN111785807A (en) * | 2020-08-11 | 2020-10-16 | 山东傲天环保科技有限公司 | PIN photoelectric device and manufacturing method thereof |
| CN111785807B (en) * | 2020-08-11 | 2022-10-18 | 今上半导体(信阳)有限公司 | PIN photoelectric device and manufacturing method thereof |
| WO2022213889A1 (en) * | 2021-04-07 | 2022-10-13 | 华为技术有限公司 | Pn junction preparation method, pn junction and modulator |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105511119A (en) | Doping structure of silicon-substrate electrooptical modulator | |
| CN205485142U (en) | Silica -based electric optic modem doping structure | |
| CN105511120A (en) | Inclined PN junction doped structure of silica-based electro-optic modulator | |
| US10135542B2 (en) | Optical modulators | |
| US9632335B2 (en) | Electro-optical modulator with a vertical capacitor structure | |
| KR101070409B1 (en) | Mach-zehnder modulator | |
| CN102165346A (en) | Method and apparatus for high speed silicon optical modulation using PN diode | |
| US9612459B2 (en) | Silicon optical modulator using asymmetric shallow waveguide and the method to make the same | |
| CN111051969B (en) | Phase modulator, manufacturing method thereof and silicon-based electro-optical modulator | |
| CN103226252A (en) | Doping structure capable of improving modulation efficiency of depletion silicon-based electrooptical modulator | |
| US9285651B2 (en) | Electro-optic silicon modulator with longitudinally nonuniform modulation | |
| KR20120026318A (en) | Electro-optic device and mach-zehnder optical modulator used the same | |
| US11101256B2 (en) | Optical modulators | |
| JP2018105975A (en) | Optical modulation element | |
| CN205318051U (en) | Silica -based electric optic modem slope PN junction doping structure | |
| CN103885210A (en) | Electrooptical modulator | |
| CN105974612A (en) | Controlled-capacitance full-depletion interdigitated PIN modulator | |
| CN105378548B (en) | A kind of doped structure and preparation method thereof, electrooptic modulator | |
| CN103852915A (en) | Electro-optical modulator and manufacturing method thereof | |
| CN102636887A (en) | Mach-Zehnder silicon light modulator | |
| KR101252747B1 (en) | Electro-Optic Device | |
| CN108490650A (en) | Cycle staggering waveguiding structure and Electro-optical Modulation structure and MZI structures | |
| CN202563200U (en) | Mach-Zehnder silicon light modulator | |
| US11982919B2 (en) | Mach-Zehnder type optical modulator | |
| CN104133306A (en) | Electrooptical modulator |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20160420 |