CN105506554B - 一种可见光/红外波段纳米光学吸收涂层及其制备方法 - Google Patents
一种可见光/红外波段纳米光学吸收涂层及其制备方法 Download PDFInfo
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Abstract
一种可见光/红外波段纳米光学吸收涂层及其制备方法，属于材料技术领域。包括金属基板及生长于金属基板上的具有光电响应特性的半导体光学涂层薄膜，所述金属基板为可见光/红外高反射率金属基板，所述半导体光学涂层薄膜的厚度为10nm～180nm，采用磁控溅射法、热蒸发法或分子束外延法等真空物理气相沉积方式生长。本发明得到的半导体光学涂层薄膜厚度为10～180nm时截止波长即可覆盖400nm～1800nm的范围，其厚度远小于光学吸收波长的1/4；且具有制备工艺简单、超薄、易于大面积集成等优点，在光学镜片涂层、超薄光电探测器以及太阳能电池等领域有着广泛的应用前景。
Description
技术领域
本发明属于材料技术领域，具体涉及一种可见光/红外波段纳米光学吸收涂层及其制备方法。
背景技术
光学涂层由一种或多种电介质或金属薄膜构成，是各种光学器件的关键部分，在光学镜片涂层、超薄光电探测器以及太阳能电池等领域有广泛的应用前景。现有的纳米光学涂层主要是在硅片等硬质半导体基底上制备得到的，涂层为1/4波长厚度的半导体薄膜，才能实现截止波长覆盖可见光及近红外范围的应用。现有的纳米光学涂层厚度较厚，成本高，制备工艺也较复杂。
发明内容
本发明针对背景技术存在的缺陷，提出了一种可见光/红外波段纳米光学吸收涂层及其制备方法。本发明在高反射率的柔性金属基板上制备半导体光学涂层，制得的光学涂层薄膜厚度较薄，且在可见光/近红外波段内具有高减反的效果，可广泛应用于光学镜片涂层、超薄光电传感器、超薄太阳能电池等领域。
本发明的技术方案为：
一种可见光/红外波段纳米光学吸收涂层，包括金属基板及生长于金属基板上的具有光电响应特性的半导体光学涂层薄膜，所述金属基板为可见光/红外高反射率金属基板，所述半导体光学涂层薄膜的厚度为10nm～180nm。
进一步地，所述可见光/红外高反射率金属基板为可见光/红外高反射率柔性金属基板，具体为铝箔、铜箔、金箔等，其表面粗糙度为1nm以下。
进一步地，所述半导体光学涂层薄膜为锗锡合金薄膜等半导体合金薄膜，以及锗薄膜等半导体薄膜，具有良好的光电转换和光学吸收特性。
进一步地，所述半导体光学涂层薄膜采用真空物理气相沉积方式生长，具体为磁控溅射法、热蒸发法或分子束外延法等。
一种可见光/红外波段纳米光学吸收涂层的制备方法，包括以下步骤：
步骤1：选择可见光/红外高反射率柔性金属基板，分别采用乙醇、去离子水清洗，吹干；
步骤2：在步骤1清洗吹干后的可见光/红外高反射率柔性金属基板上制备10～180nm厚的锗锡合金薄膜；具体过程为：在10-8Torr以下的真空环境下，将可见光/红外高反射率柔性金属基板在200～400℃下处理30min～1h，以去除基板表面的附着气体，降温至室温；保持10-8Torr以下的真空环境，将锗源升温至1000～1200℃，锡源升温至1000～1200℃，金属基板升温至100～250℃；打开锗源、锡源和基片挡板，采用分子束外延法在金属基板表面生长锗锡合金薄膜。
进一步地，所述锗源和锡源以体积百分比计纯度不低于99.99％。
进一步地，所述锗源和锡源的升温速率为7℃/min，金属基板的升温速率为1℃/min。
进一步地，所述可见光/红外高反射率柔性金属基板为铝箔、铜箔、金箔等，其表面粗糙度为1nm以下。
本发明的有益效果为：本发明采用物理气相沉积分子束外延技术，在可见光/红外高反射率柔性金属基板(铝箔)上生长可见光/红外波段纳米光学吸收涂层(锗锡合金薄膜)，得到的光学吸收涂层厚度为10～180nm时截止波长即可覆盖400nm～1800nm的范围，其厚度远小于光学吸收波长的1/4；且具有制备工艺简单、超薄、易于大面积集成等优点，在光学镜片涂层、超薄光电探测器以及太阳能电池等领域有着广泛的应用前景。
附图说明
图1为本发明实施例所述可见光/红外波段纳米光学吸收涂层的制备工艺流程图；
图2为本发明实施例1至8所述纳米光学吸收涂层的可见光-近红外波段的反射率测试结果图。
具体实施方式
下面结合附图和实施例，详述本发明的技术方案。
一种可见光/红外波段纳米光学吸收涂层，包括铝箔及生长于铝箔之上的具有光电响应特性的锗锡合金薄膜，所述锗锡合金薄膜的厚度为10nm～180nm。
一种可见光/红外波段纳米光学吸收涂层的制备方法，包括以下步骤：
步骤1：选择表面粗糙度小于1nm的铝箔作为所述纳米光学吸收涂层的基板，分别采用乙醇、去离子水清洗，吹干；
步骤2：在步骤1清洗吹干后的铝箔上制备10～180nm厚的锗锡合金薄膜；具体过程为：在10-8Torr以下的真空环境下，将铝箔在200～400℃下处理30min～1h，以去除铝箔基板表面的附着气体，降温至室温；保持10-8Torr以下的真空环境，将体积百分比计纯度不低于99.99％的锗源以7℃/min的升温速率升温至1000～1200℃，体积百分比计纯度不低于99.99％的锡源以7℃/min的升温速率升温至1000～1200℃，铝箔以1℃/min的升温速率升温至100～250℃；打开锗源、锡源和基片挡板，采用分子束外延法在金属基板表面生长锗锡合金薄膜。
实施例1
一种可见光/红外波段纳米光学吸收涂层的制备方法，包括以下步骤：
步骤1：选择表面粗糙度小于1nm的铝箔作为所述纳米光学吸收涂层的基板，分别在乙醇、去离子水中超声清洗20s，然后采用高纯氮气吹干铝箔；
步骤2：在步骤1清洗吹干后的铝箔的抛光面上制备锗锡合金薄膜；具体过程为：在10-9Torr的真空环境下，将铝箔在350℃下处理30min，以去除铝箔基板表面附着的气体，然后降温至室温；保持10-9Torr的真空环境，将体积百分比计纯度为99.999％的锗源以7℃/min的升温速率升温至1200℃，体积百分比计纯度为99.999％的锡源以7℃/min的升温速率升温至1050℃，铝箔以1℃/min的升温速率升温至160℃；打开锗源、锡源和基片挡板，采用分子束外延法在铝箔基板表面生长锗锡合金薄膜，生长时间为10min，生长过程中铝箔基板以0.5转/秒的速度匀速旋转；生长完成后，关闭锗锡源挡板，降温至室温后取出，在铝箔基板上制备得到10nm厚的锗锡合金薄膜，即得到本发明所述纳米光学吸收涂层。
实施例2
本实施例与实施例1的区别为：步骤2所述生长时间为20min，铝箔基板上得到的锗锡合金薄膜的厚度为20nm。其余步骤与实施例1相同。
实施例3
本实施例与实施例1的区别为：步骤2所述生长时间为30min，铝箔基板上得到的锗锡合金薄膜的厚度为30nm。其余步骤与实施例1相同。
实施例4
本实施例与实施例1的区别为：步骤2所述生长时间为40min，铝箔基板上得到的锗锡合金薄膜的厚度为40nm。其余步骤与实施例1相同。
实施例5
本实施例与实施例1的区别为：步骤2所述生长时间为50min，铝箔基板上得到的锗锡合金薄膜的厚度为50nm。其余步骤与实施例1相同。
实施例6
本实施例与实施例1的区别为：步骤2所述生长时间为60min，铝箔基板上得到的锗锡合金薄膜的厚度为60nm。其余步骤与实施例1相同。
实施例7
本实施例与实施例1的区别为：步骤2所述生长时间为100min，铝箔基板上得到的锗锡合金薄膜的厚度为100nm。其余步骤与实施例1相同。
实施例8
本实施例与实施例1的区别为：步骤2所述生长时间为3h，铝箔基板上得到的锗锡合金薄膜的厚度为180nm。其余步骤与实施例1相同。
图2为本发明实施例1至8所述纳米光学吸收涂层通过可见光-近红外波段分光光度计测试的反射率曲线，测试时以纯铝箔作为基准。由图2可知，随着生长时间的增加，锗锡合金薄膜的厚度增加，较高波长波段内的光学反射率逐渐降低，吸收率升高，表明本发明实施例得到的纳米锗锡涂层起到了显著的可见光/红外波段的减反、增强吸收的作用。对于某一个特定厚度涂层的样品，存在一个光学吸收截止波长，截止波长以上波段内反射率随波长增加而增加，实施例中随着生长时间的增加，锗锡薄膜厚度增加，截止波长也随之增加，最大可达到1800nm。
本发明在铝箔上生长锗锡合金薄膜得到可见光/红外波段纳米光学吸收涂层，由于锗锡合金在可见光/近红外波段下有良好的光子吸收率，铝箔是具有高光学反射率的基板材料，在铝箔基板上生长的锗锡薄膜由于两种材料界面间的多次反射和透射带来的相移加上明显的光学衰减，光子在薄膜中会产生强烈的干涉，进而改变材料在可见光/红外波段的反射特性；本发明纳米锗锡涂层具有显著的可见光/红外波段的减反、增强吸收的作用。
Claims (6)
1.一种可见光/红外波段纳米光学吸收涂层，由金属基板及生长于金属基板上的半导体光学涂层薄膜构成，所述金属基板为可见光/红外高反射率金属基板，所述半导体光学涂层薄膜的厚度为10nm～60nm；
所述可见光/红外高反射率金属基板的表面粗糙度为1nm以下；
所述可见光/红外波段纳米光学吸收涂层的制备方法，包括以下步骤：
步骤1：选择可见光/红外高反射率柔性金属基板，分别采用乙醇、去离子水清洗，吹干；
步骤2：在步骤1清洗吹干后的可见光/红外高反射率柔性金属基板上制备10～60nm厚的锗锡合金薄膜；具体过程为：在10-8Torr以下的真空环境下，将可见光/红外高反射率柔性金属基板在200～400℃下处理30min～1h，以去除基板表面的附着气体，降温至室温；保持10-8Torr以下的真空环境，将锗源升温至1000～1200℃，锡源升温至1000～1200℃，金属基板升温至100～250℃；打开锗源、锡源和基片挡板，采用分子束外延法在金属基板表面生长锗锡合金薄膜；
所述锗源和锡源的升温速率为7℃/min，金属基板的升温速率为1℃/min。
2.根据权利要求1所述的可见光/红外波段纳米光学吸收涂层，其特征在于，所述可见光/红外高反射率金属基板为铝箔、铜箔或金箔。
3.一种可见光/红外波段纳米光学吸收涂层的制备方法，包括以下步骤：
步骤1：选择可见光/红外高反射率柔性金属基板，分别采用乙醇、去离子水清洗，吹干；
步骤2：在步骤1清洗吹干后的可见光/红外高反射率柔性金属基板上制备10～60nm厚的锗锡合金薄膜；具体过程为：在10-8Torr以下的真空环境下，将可见光/红外高反射率柔性金属基板在200～400℃下处理30min～1h，以去除基板表面的附着气体，降温至室温；保持10-8Torr以下的真空环境，将锗源升温至1000～1200℃，锡源升温至1000～1200℃，金属基板升温至100～250℃；打开锗源、锡源和基片挡板，采用分子束外延法在金属基板表面生长锗锡合金薄膜。
4.根据权利要求3所述的可见光/红外波段纳米光学吸收涂层的制备方法，其特征在于，所述锗源和锡源以体积百分比计纯度不低于99.99％。
5.根据权利要求3所述的可见光/红外波段纳米光学吸收涂层的制备方法，其特征在于，所述锗源和锡源的升温速率为7℃/min，金属基板的升温速率为1℃/min。
6.根据权利要求3所述的可见光/红外波段纳米光学吸收涂层的制备方法，其特征在于，所述可见光/红外高反射率柔性金属基板为铝箔、铜箔或金箔，表面粗糙度为1nm以下。
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