CN105489768A - 一种防光照有机/无机杂化钙钛矿太阳能电池 - Google Patents

一种防光照有机/无机杂化钙钛矿太阳能电池 Download PDF

Info

Publication number
CN105489768A
CN105489768A CN201610002644.3A CN201610002644A CN105489768A CN 105489768 A CN105489768 A CN 105489768A CN 201610002644 A CN201610002644 A CN 201610002644A CN 105489768 A CN105489768 A CN 105489768A
Authority
CN
China
Prior art keywords
solar cell
layer
perovskite solar
hybrid perovskite
sun
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201610002644.3A
Other languages
English (en)
Inventor
董旭
袁宁一
丁建宁
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Haian Changzhou University High-Tech R & D Center
Original Assignee
Haian Changzhou University High-Tech R & D Center
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Haian Changzhou University High-Tech R & D Center filed Critical Haian Changzhou University High-Tech R & D Center
Priority to CN201610002644.3A priority Critical patent/CN105489768A/zh
Publication of CN105489768A publication Critical patent/CN105489768A/zh
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80Constructional details
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

本发明涉及一种防光照有机/无机杂化钙钛矿太阳能电池,其特征在于:包括玻璃衬底和依次层叠于该衬底上的致密层、氨基酸层、钙钛矿层、空穴传输层和金属电极层。将β-丙氨酸添加进传统的FTO/TiO2/CH3NH3PbI3/spiro-OMeTAD/Au的结构中,β-丙氨酸的氨基与钙钛矿结合,β-丙氨酸的羧基与TiO2致密层上裸露在外面的Ti原子结合,有效的避免了钙钛矿层与致密层的接触,大幅度的提高了钙钛矿电池在无水光照情况下的稳定性。

Description

一种防光照有机/无机杂化钙钛矿太阳能电池
技术领域
本发明涉及一种有机/无机杂化钙钛矿太阳能电池领域,尤其涉及一种防光照有机/无机杂化钙钛矿太阳能电池。
背景技术
近年来,有机无机杂化钙钛矿太阳能电池展现出优异的光电性能和巨大的潜力。随着钙钛矿太阳电池技术的发展,基于这种吸光材料的电池器件光电转换效率高达19.3%。
基于CH3NH3PbI3的有机/无机杂化钙钛矿太阳能电池由于迅速提升的效率在世界范围内备受关注。目前有机/无机杂化钙钛矿太阳能电池目前报道的结构主要是FTO/TiO2/CH3NH3PbI3/spiro-OMeTAD/Au,其电池效率现已达到20.1%;但这种结构,主要存在以下缺点:在无水光照下,有机/无机杂化钙钛矿太阳能电池的性能仍持续下降,无水光照下有机/无机杂化钙钛矿太阳能电池性能下降的主要原因是致密层TiO2在光照下利用光催化原理分解CH3NH3PbI3材料。
发明内容
本发明要解决的技术问题是提供一种防光照有机/无机杂化钙钛矿太阳能电池,能够在无水光照下保持电池的稳定性。
为解决上述技术问题,本发明的技术方案为:
一种防光照有机/无机杂化钙钛矿太阳能电池,其特征在于:包括玻璃衬底和依次层叠于该衬底上的致密层、氨基酸层、钙钛矿层、空穴传输层和金属电极层。
进一步的,所述玻璃衬底采用的是方块电阻为10-15欧姆,透过率在80-85%的掺氟氧化锡玻璃。
进一步的,所述致密层为氧化钛致密层,其致密层的厚度为30nm。
进一步的,所述氨基酸层为β-丙氨酸层涂在氧化钛致密层上。
进一步的,所述钙钛矿层由甲胺铅碘形成,其钙钛矿层的厚度为200nm。
进一步的,所述空穴传输层采用有机材料形成,所述空穴传输层采用Spiro-OMeTADHTM溶液滴涂而成,其空穴传输层的厚度为100nm。
进一步的,所述金属电极层采用的是金,其金属电极层的厚度为100nm。
本发明的优点在于:将β-丙氨酸添加进传统的FTO/TiO2/CH3NH3PbI3/spiro-OMeTAD/Au的结构中,β-丙氨酸的氨基与钙钛矿结合,β-丙氨酸的羧基与TiO2致密层上裸露在外面的Ti原子结合,有效的避免了钙钛矿层与致密层的接触,大幅度的提高了钙钛矿电池在无水光照情况下的稳定性。
附图说明
下面结合附图和具体实施方式对本发明作进一步详细的说明。
图1为防光照有机/无机杂化钙钛矿太阳能电池。
如图1所示:1、玻璃衬底;2、致密层;3、氨基酸层;4、钙钛矿层;5、空穴传输层;6、金属电极层。
具体实施方式
下面的实施例可以使本专业的技术人员更全面地理解本发明,但并不因此将本发明限制在所述的实施例范围之中。
如图1所示的一种防光照有机/无机杂化钙钛矿太阳能电池,其特征在于:包括玻璃衬底1和依次层叠于该衬底上的致密层2、氨基酸层3、钙钛矿层4、空穴传输层5和金属电极层6。
玻璃衬底1采用的是方块电阻为10-15欧姆,透过率在80-85%的掺氟氧化锡玻璃。
致密层2为氧化钛致密层,其致密层的厚度为30nm。
氨基酸层3为β-丙氨酸层涂在氧化钛致密层上。
钙钛矿层4由甲胺铅碘形成,其钙钛矿层的厚度为200nm。
空穴传输层5采用Spiro-OMeTADHTM溶液滴涂而成,其空穴传输层的厚度为100nm。
金属电极层6采用的是金,其金属电极层的厚度为100nm。
本实施例中,β-丙氨酸的氨基与钙钛矿结合,β-丙氨酸的羧基与TiO2致密层上裸露在外面的Ti原子结合,有效的避免了钙钛矿层与致密层的接触,大幅度的提高了钙钛矿电池在无水光照情况下的稳定性。
本行业的技术人员应该了解,本发明不受上述实施例的限制,上述实施例和说明书中描述的只是说明本发明的原理,在不脱离本发明精神和范围的前提下,本发明还会有各种变化和改进,这些变化和改进都落入要求保护的本发明范围内。本发明要求保护范围由所附的权利要求书及其等效物界定。

Claims (7)

1.一种防光照有机/无机杂化钙钛矿太阳能电池,其特征在于:包括玻璃衬底和依次层叠于该衬底上的致密层、氨基酸层、钙钛矿层、空穴传输层和金属电极层。
2.根据权利要求1所述一种防光照有机/无机杂化钙钛矿太阳能电池,其特征在于:所述玻璃衬底采用的是方块电阻为10-15欧姆,透过率在80-85%的掺氟氧化锡玻璃。
3.根据权利要求1所述一种防光照有机/无机杂化钙钛矿太阳能电池,其特征在于:所述致密层为氧化钛致密层,其致密层的厚度为30nm。
4.根据权利要求1所述一种防光照有机/无机杂化钙钛矿太阳能电池,其特征在于:所述氨基酸层为β-丙氨酸层涂在氧化钛致密层上。
5.根据权利要求1所述一种防光照有机/无机杂化钙钛矿太阳能电池,其特征在于:所述钙钛矿层由甲胺铅碘形成,其钙钛矿层的厚度为200nm。
6.根据权利要求1所述一种防光照有机/无机杂化钙钛矿太阳能电池,其特征在于:所述空穴传输层采用Spiro-OMeTADHTM溶液滴涂而成,其空穴传输层的厚度为100nm。
7.根据权利要求1所述一种防光照有机/无机杂化钙钛矿太阳能电池,其特征在于:所述金属电极层采用的是金,其金属电极层的厚度为100nm。
CN201610002644.3A 2015-12-23 2016-01-06 一种防光照有机/无机杂化钙钛矿太阳能电池 Pending CN105489768A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610002644.3A CN105489768A (zh) 2015-12-23 2016-01-06 一种防光照有机/无机杂化钙钛矿太阳能电池

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CN2015109765728 2015-12-23
CN201510976572 2015-12-23
CN201610002644.3A CN105489768A (zh) 2015-12-23 2016-01-06 一种防光照有机/无机杂化钙钛矿太阳能电池

Publications (1)

Publication Number Publication Date
CN105489768A true CN105489768A (zh) 2016-04-13

Family

ID=55676623

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610002644.3A Pending CN105489768A (zh) 2015-12-23 2016-01-06 一种防光照有机/无机杂化钙钛矿太阳能电池

Country Status (1)

Country Link
CN (1) CN105489768A (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106025077A (zh) * 2016-06-29 2016-10-12 南通星宇电气有限公司 一种防光照有机无机杂化钙钛太阳能电池的电气柜
CN107146848A (zh) * 2017-05-22 2017-09-08 如皋市下原科技创业服务有限公司 一种太阳能电池

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104538551A (zh) * 2014-12-26 2015-04-22 西安电子科技大学 基于FTO/c-TiO2阴极的平面钙钛矿太阳能电池及其制备方法
CN105047825A (zh) * 2015-08-07 2015-11-11 常州大学 一种有机/无机钙钛矿电池及其制备方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104538551A (zh) * 2014-12-26 2015-04-22 西安电子科技大学 基于FTO/c-TiO2阴极的平面钙钛矿太阳能电池及其制备方法
CN105047825A (zh) * 2015-08-07 2015-11-11 常州大学 一种有机/无机钙钛矿电池及其制备方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Y. C. SHIH ET AL.: ""Enhancing the photocurrent of perovskite solar cells via modification of the TiO2/CH3NH3PbI3 heterojunction interface with amino acid"", 《JOURNAL OF MATERIALS CHEMISTRY A》 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106025077A (zh) * 2016-06-29 2016-10-12 南通星宇电气有限公司 一种防光照有机无机杂化钙钛太阳能电池的电气柜
CN107146848A (zh) * 2017-05-22 2017-09-08 如皋市下原科技创业服务有限公司 一种太阳能电池

Similar Documents

Publication Publication Date Title
Li et al. One-pot synthesis of mesoporous TiO2 micropheres and its application for high-efficiency dye-sensitized solar cells
Hwang et al. High-efficiency, solid-state, dye-sensitized solar cells using hierarchically structured TiO2 nanofibers
Shang et al. Facile synthesis of mesoporous tin oxide spheres and their applications in dye-sensitized solar cells
Fu et al. Room-temperature sol–gel derived molybdenum oxide thin films for efficient and stable solution-processed organic light-emitting diodes
Bera et al. Photoluminescence and photoconductivity of ZnS-coated ZnO nanowires
Bai et al. Inverted organic solar cells based on aqueous processed ZnO interlayers at low temperature
JP2012048973A5 (zh)
Heo et al. Sb2S3-sensitized photoelectrochemical cells: open circuit voltage enhancement through the introduction of poly-3-hexylthiophene interlayer
Wu et al. BaCO3 modification of TiO2 electrodes in quasi-solid-state dye-sensitized solar cells: performance improvement and possible mechanism
WO2011142848A3 (en) Nanoparticle electrodes and methods of preparation
CN103441221A (zh) 基于石墨烯的柔性量子点发光二极管器件及其制备方法
ATE548474T1 (de) Blei-zinn-silber-bismuthaltige legierung für positives gitter einer bleibatterie
Liang et al. Flexible fiber-type dye-sensitized solar cells based on highly ordered TiO2 nanotube arrays
WO2012091331A3 (ko) 태양전지의 전극 형성용 페이스트 조성물 및 이를 이용한 전극
Noh et al. A newly designed Nb-doped TiO2/Al-doped ZnO transparent conducting oxide multilayer for electrochemical photoenergy conversion devices
CN105489768A (zh) 一种防光照有机/无机杂化钙钛矿太阳能电池
WO2011106236A3 (en) Nanoscale high-aspect-ratio metallic structure and method of manufacturing same
CN105552229A (zh) 一种防水有机/无机杂化钙钛矿太阳能电池
EP2605287A3 (en) Photovoltaic device
WO2012106589A3 (en) Solar cell electrode, and method for manufacturing the same, and paste for the solar cell electrode
CN105449105A (zh) 一种有机/无机杂化钙钛矿太阳能电池
Lin et al. Enhancing the efficiency of perovskite solar cells by bidirectional modification of the perovskite and electron transport layer
WO2013036052A8 (ko) 염료감응 태양전지용 광전극과 그 제조방법 및 이를 이용한 염료감응 태양전지
CN106025077A (zh) 一种防光照有机无机杂化钙钛太阳能电池的电气柜
WO2012150805A3 (ko) 플렉시블 염료감응형 태양전지용 Ti-In-Zn-O 투명전극 및 이를 이용한 금속 삽입형 3층 구조 고전도도 투명전극과 이의 제조방법

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20160413