CN105489729A - Light emitting diode (LED) structure having reflector protective layer - Google Patents
Light emitting diode (LED) structure having reflector protective layer Download PDFInfo
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- CN105489729A CN105489729A CN201410478463.9A CN201410478463A CN105489729A CN 105489729 A CN105489729 A CN 105489729A CN 201410478463 A CN201410478463 A CN 201410478463A CN 105489729 A CN105489729 A CN 105489729A
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- layer
- type semiconductor
- adhesion layer
- semiconductor layer
- protective layer
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- 239000011241 protective layer Substances 0.000 title claims abstract description 57
- 239000010410 layer Substances 0.000 claims abstract description 154
- 239000004065 semiconductor Substances 0.000 claims abstract description 57
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 24
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 10
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 6
- 229910052786 argon Inorganic materials 0.000 claims abstract description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 6
- 229910000077 silane Inorganic materials 0.000 claims abstract description 6
- 238000000151 deposition Methods 0.000 claims abstract 2
- 239000011248 coating agent Substances 0.000 claims description 28
- 238000000576 coating method Methods 0.000 claims description 28
- 239000011230 binding agent Substances 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 18
- 238000010276 construction Methods 0.000 claims description 17
- 238000005229 chemical vapour deposition Methods 0.000 claims description 14
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 10
- 230000008676 import Effects 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 239000004408 titanium dioxide Substances 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 abstract description 11
- 239000002184 metal Substances 0.000 abstract description 11
- 238000000034 method Methods 0.000 abstract description 7
- 239000012790 adhesive layer Substances 0.000 abstract 10
- 230000001681 protective effect Effects 0.000 abstract 4
- 229910020776 SixNy Inorganic materials 0.000 abstract 1
- 238000004026 adhesive bonding Methods 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 abstract 1
- 239000004332 silver Substances 0.000 description 13
- 229910052709 silver Inorganic materials 0.000 description 11
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 8
- 239000010936 titanium Substances 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 238000000605 extraction Methods 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 5
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 5
- 229910000990 Ni alloy Inorganic materials 0.000 description 4
- 229910001260 Pt alloy Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 3
- 229910001069 Ti alloy Inorganic materials 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 229910001316 Ag alloy Inorganic materials 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- CHPZKNULDCNCBW-UHFFFAOYSA-N gallium nitrate Chemical group [Ga+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O CHPZKNULDCNCBW-UHFFFAOYSA-N 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229940044658 gallium nitrate Drugs 0.000 description 1
- GRPQBOKWXNIQMF-UHFFFAOYSA-N indium(3+) oxygen(2-) tin(4+) Chemical group [Sn+4].[O-2].[In+3] GRPQBOKWXNIQMF-UHFFFAOYSA-N 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- Led Devices (AREA)
Abstract
An LED structure having a reflector protective layer includes a P type semiconductor layer, a metal reflecting layer, a buffer layer, and a protective adhesive layer, which are successively stacked; the protective adhesive layer shields edges of the metal reflecting layer; the protective adhesive layer includes an adhesive layer and a protective layer; the adhesive layer is formed by the process of firstly inputting nitrogen, argon, and ammonia through plasma enhanced chemical vapor deposition (PVCVD) to form adhesive bonding on the metal reflecting layer, and then inputting silane (SixHy) to deposit silicon nitride (SixNy) or silicon dioxide (SiO2) to form the adhesive layer; the protective layer is formed by continuously depositing on the adhesive layer by adoption of PVCVD; the adhesive layer possesses excellent adhesiveness, and can avoid stripping and breaking off of the protective adhesive layer; the adhesive layer has excellent hydrophobicity and heat stability, and then can allow the protective layer to stably cover the edges of the metal reflecting layer in a high-humidity and violently-changeable temperature environment; and the protective layer can really protect the metal reflecting layer, and can avoid influence on luminous efficiency due to oxidation of the metal reflecting layer.
Description
Technical field
The present invention relates to a kind of light-emitting diode, particularly a kind of structure increasing light-emitting diode light extraction efficiency.
Background technology
Light-emitting diode (LightEmittingDiode; LED) form primarily of the multiple crystalline substance of heap of stone of semi-conducting material is stacking, for blue light-emitting diode, it is gallium nitrate based (GaN-based) brilliant film composition of heap of stone mainly.
Refer to shown in " Fig. 1 ", for the existing vertical LED of one, it comprises a n type semiconductor layer 1 of sandwich structure consisting, one luminescent layer 2 and a p type semiconductor layer 3, one reflector 4 (Mirrorlayer) is sequentially set under this p type semiconductor layer 3, one resilient coating 5 (Bufferlayer), one binder course 6, one silicon substrate 7 and a P-type electrode 8, and the surface of this n type semiconductor layer 1 can roughening treatment to increase light exitance, and for arranging a N-type electrode 9, accordingly after this N-type electrode 9 bestows voltage with this P-type electrode 8, this n type semiconductor layer 1 provides electronics, and this p type semiconductor layer 3 provides electric hole, this electronics can produce light with this electric hole after this luminescent layer 2 is combined.
The existing light extraction efficiency in order to increase light-emitting diode, be generally the light sent to reflect this luminescent layer 2 by this reflector 4, therefore this reflector 4 is for selecting the silver/titanium tungsten/platinum alloy plated film with high reverse--bias efficiency, silver/titanium/platinum alloy plated film, silver/titanium tungsten/nickel alloy plated film or silver/nickel alloy plated film etc., to have the speciality of high reverse--bias efficiency and high thermal stability by it, the reverberation of amplitude peak is to increase light extraction efficiency and stable electrical of tool.
But, after light-emitting diode forms this reflector 4 under this p type semiconductor layer 3, also must continue on this reflector 4 and form this resilient coating 5 and this binder course 6 etc., and need just can complete through multiple tracks semiconductor technology again, thus the silver in this reflector 4 is easily oxidized because of subsequent technique, it can cause the reflection efficiency in this reflector 4 to reduce, and reduces the light extraction efficiency of this light-emitting diode.
In order to solve this problem, refer to " Fig. 2 " and " Fig. 3 ", as U.S. Publication US8766303 patent specification, its structure comprises a N-type electrode 10, one n type semiconductor layer 11, one luminescent layer 12, one p type semiconductor layer 13, one metallic reflector 14, one protective layer 15B, one protective layer adhesion layer 15A, one resilient coating 16, one binder course 17, one permanent substrate 18 and a P-type electrode 19, wherein for allowing this protective layer adhesion layer 15A and this protective layer 15B be formed at the side (as shown in Figure 2) of this metallic reflector 14 away from this p type semiconductor layer 13, and cover the side edge of this metallic reflector 14.
Or allow this protective layer adhesion layer 15A and this protective layer 15B be formed between this p type semiconductor layer 13 and this resilient coating 16 (as shown in Figure 3); and allow this protective layer adhesion layer 15A and this protective layer 15B cover the side edge of this metallic reflector 14; this p type semiconductor layer 13, this protective layer adhesion layer 15A, this protective layer 15B and this resilient coating 16 completely can cover this metallic reflector 14, avoid this metallic reflector 14 to be oxidized in subsequent technique.
This prior art, this protective layer 15B is for selecting titanium dioxide, silicon dioxide, the group that alundum (Al2O3) and tin indium oxide form makes, it has stable, the not characteristic such as malleable physical property, but this protective layer adhesion layer 15A uses, titanium, tungsten, chromium, and the metal alloy that above essence combines formed, in general in conventional environment (temperature 20 DEG C ~ 27 DEG C, humidity 50% ~ 60%) use metal adhesion layer, the problem that the tack of oxide is not good can be overcome, but at extreme environment, and under the operation of high current density this protective layer adhesion layer 15A still can make that this protective layer adhesion layer 15A cannot be firm because of the factor of thermal expansion and Water oxidize protective layer 15B is coated on metallic reflector 14 edge, this metallic reflector 14 can be oxidized unavoidably in subsequent technique, and the demand that cannot meet in use.And make this protective layer adhesion layer 15A and use; titanium, tungsten, chromium; and the metal alloy that combines of above essence and the group making this protective layer 15B and form for selecting titanium dioxide, silicon dioxide, alundum (Al2O3) and tin indium oxide; know that protective layer adhesion layer 15A and protective layer 15B is metal and oxide thus; and metal and oxide characteristics do not mate; and cannot make with continuous processing, thus increase protective layer adhesion layer and protective layer in extreme circumstances and the risk lost efficacy under the operation of high current density.
Summary of the invention
Main purpose of the present invention is the light emitting diode construction disclosing a kind of tool reflector protective layer, at extreme environment, and can increase the tack of reflector protective layer under the operation of high current density, and avoid stripping to come off, really to protect metallic reflector.
The present invention is a kind of light emitting diode construction of tool reflector protective layer, it comprises a N-type electrode, one n type semiconductor layer, one luminescent layer, one p type semiconductor layer, one metallic reflector, one protection adhesion layer, one resilient coating, one binder course, one permanent substrate and a P-type electrode, wherein this N-type electrode is formed at the side of this n type semiconductor layer, this luminescent layer is formed at the side of this n type semiconductor layer away from this N-type electrode, this p type semiconductor layer is formed at the side of this luminescent layer away from this n type semiconductor layer, this metallic reflector is formed at the side of this p type semiconductor layer away from this luminescent layer.
And this protection adhesion layer is formed at the side of this metallic reflector away from this p type semiconductor layer, and cover the edge of this metallic reflector, this p type semiconductor layer, this protection adhesion layer and this resilient coating completely can cover this metallic reflector.
This binder course is formed at the side of this resilient coating away from this protection adhesion layer, and this permanent substrate is formed at the side of this binder course away from this protection adhesion layer, and this P-type electrode is formed at the side of this permanent substrate away from this binder course.
Or; this protection adhesion layer can be formed between this p type semiconductor layer and this resilient coating; and allowing this protection adhesion layer cover the side edge of this metallic reflector, this p type semiconductor layer, this protection adhesion layer and this resilient coating completely can cover this metallic reflector.
The structure of this protection adhesion layer is divided into an adhesion layer and a protective layer again; this adhesion layer is formed adhere to bond for importing nitrogen, argon gas and ammonia in advance by plasma growth form chemical vapour deposition (CVD) (PVCVD) on this metallic reflector; import silane (SixHy) again to be formed with deposited silicon nitride (SixNy) or silica (SiO2), silicon nitride (SixNy) or silica (SiO2) film of formation of filling a prescription thus have hydrophobicity and high-fire resistance.And this protective layer for use PVCVD continues on this adhesion layer deposit and formed.
Accordingly; the present invention has good tack by this adhesion layer; this protection adhesion layer can be avoided to peel off come off; that is this protective layer can protect this metallic reflector really; also this metallic reflector can be avoided to be oxidized in subsequent technique and reflector metal precipitation when high current practice; thus can maintain the reflectivity of this metallic reflector, that is the light that this luminescent layer produces fully can be reflected, and increase the light extraction efficiency of light-emitting diode and electrically stablize.
Describe the present invention below in conjunction with the drawings and specific embodiments, but not as a limitation of the invention.
Accompanying drawing explanation
Fig. 1 is existing light emitting diode construction figure;
Fig. 2 is the light emitting diode construction figure mono-of existing U.S. Publication US8766303;
Fig. 3 is the light emitting diode construction figure bis-of existing U.S. Publication US8766303;
Fig. 4 is light emitting diode construction figure of the present invention;
Fig. 5, for the present invention, another implements light emitting diode construction figure.
Embodiment
Hereby detailed content for the present invention and technical descriptioon, be now described further with embodiment, but it is to be understood that those embodiments is only the use illustrated, and should not be interpreted as restriction of the invention process.
Shown in " Fig. 4 "; the present invention is a kind of light emitting diode construction of tool reflector protective layer, and it comprises N-type electrode 20, n type semiconductor layer 21, luminescent layer 22, p type semiconductor layer 23, metallic reflector 24, protection adhesion layer 25, resilient coating 26, binder course 27, permanent substrate 28 and a P-type electrode 29.
Wherein this N-type electrode 20 is formed at the side of this n type semiconductor layer 21, this luminescent layer 22 is formed at the side of this n type semiconductor layer 21 away from this N-type electrode 20, this p type semiconductor layer 23 is formed at the side of this luminescent layer 22 away from this n type semiconductor layer 21, the sandwich structure that this n type semiconductor layer 21, this luminescent layer 22 are formed with this p type semiconductor layer 23, is the agent structure of light-emitting diode.
And this metallic reflector 24 is formed at the side of this p type semiconductor layer 23 away from this luminescent layer 22, this metallic reflector 24 can be silver/titanium tungsten/platinum alloy plated film, and its better enforcement value, the thickness of silver is 100 ~ 300 nanometers, the thickness of titanium tungsten is 20 ~ 300 nanometers, the thickness of platinum is for being less than 500 nanometers.Or this metallic reflector 24 also can be silver/titanium/platinum alloy plated film, its same better enforcement value, the thickness of silver is 200 ~ 300 nanometers, the thickness of titanium is 20 ~ 300 nanometers, the thickness of platinum is for being less than 500 nanometers.Or this metallic reflector 24 also can be silver/titanium/nickel alloy plated film, its same better enforcement value, the thickness of silver is 200 ~ 300 nanometers, the thickness of titanium is 20 ~ 300 nanometers, the thickness of nickel is for being less than 500 nanometers.Or this metallic reflector 24 also can be silver/nickel alloy plated film, its same better enforcement value, the thickness of silver is 200 ~ 300 nanometers, the thickness of nickel is for being less than 500 nanometers.
And this protection adhesion layer 25 is formed at this metallic reflector 24 away from the side (as shown in Figure 4) of this p type semiconductor layer 23 and covers the edge of this metallic reflector 24, this p type semiconductor layer 23, this protection adhesion layer 25 completely can cover this metallic reflector 24 with this resilient coating 26.
The structure of this protection adhesion layer 25 is divided into an an adhesion layer 251A and protective layer 252A again; this adhesion layer 251A is formed adhere to bond for importing nitrogen, argon gas and ammonia in advance by plasma growth form chemical vapour deposition (CVD) (PVCVD) on this metallic reflector 24, then imports silane (SixHy) with deposited silicon nitride (SixNy) or silica (SiO
2) and formed, its thickness preferred values is less than 10 nanometers, and the thickness of this protective layer is between 30 nanometers and 150 nanometers.
And the material of this protective layer 252A is for being selected from silicon nitride (SixNy), silicon dioxide (SiO
2) and titanium dioxide (TiO
2) group that forms, and formed for using PVCVD to continue to deposit in this adhesion layer 251A on.
This resilient coating 26 is formed at the side of this protection adhesion layer 25 away from this metallic reflector 24; this resilient coating 26 for be selected from tool conductivity and and the metal material had good stability; and thermal coefficient of expansion between gallium nitride and silicon as the resilient coating between silicon substrate and gallium nitride epitaxial layer, as titanium, platinum, titanium tungsten, nickel etc.
This binder course 27 is for being formed at the side of this resilient coating 26 away from this protection adhesion layer 25; this permanent substrate 28 is formed at the side of this binder course 27 away from this protection adhesion layer 25; this P-type electrode 29 is formed at the side of this permanent substrate 28 away from this binder course 27; wherein this binder course 27 is for cohering this permanent substrate 28 and this resilient coating 26, and this permanent substrate 28 is generally the silicon substrate adopting tool conductivity.
Refer to shown in " Fig. 5 "; for another implements structure; wherein this protection adhesion layer 25 can be formed between this p type semiconductor layer 23 and this resilient coating 26; and allowing this protection adhesion layer 25 cover the side edge of this metallic reflector 24, this p type semiconductor layer 23, this protection adhesion layer 25 completely can cover this metallic reflector 24 with this resilient coating 26.
And implement structure in this; this protection adhesion layer 25 has adhesion layer 251B and protective layer 252B equally; this adhesion layer 251B imports nitrogen, argon gas and ammonia in advance by plasma growth form chemical vapour deposition (CVD) (PVCVD) equally and is formed on this metallic reflector 24 and adhere to bond, then imports silane (SixHy) with deposited silicon nitride (SixNy) or silica (SiO
2) and formed.And the material of this protective layer 252B is similarly and is selected from silicon nitride (SixNy), silicon dioxide (SiO
2) and titanium dioxide (TiO
2) group that forms, and formed for using PVCVD to continue to deposit in this adhesion layer 251B on.
As mentioned above; the present invention is by the setting of this adhesion layer; increase tack; this protection adhesion layer is allowed not peel off the problem come off; that is this protective layer can protect this metallic reflector really; be oxidized in subsequent technique to avoid this metallic reflector and reflector metal precipitation when high current practice; thus the reflectivity of this metallic reflector can be maintained; that is the light that this luminescent layer produces can fully be reflected; and increase the light extraction efficiency of light-emitting diode and electrically stablize, meet the demand on using.
Certainly; the present invention also can have other various embodiments; when not deviating from the present invention's spirit and essence thereof; those of ordinary skill in the art are when making various corresponding change and distortion according to the present invention, but these change accordingly and are out of shape the protection range that all should belong to the claim appended by the present invention.
Claims (8)
1. a light emitting diode construction for tool reflector protective layer, is characterized in that, comprises:
One N-type electrode;
One n type semiconductor layer, this N-type electrode is formed at the side of this n type semiconductor layer;
One luminescent layer, this luminescent layer is formed at the side of this n type semiconductor layer away from this N-type electrode;
One p type semiconductor layer, this p type semiconductor layer is formed at the side of this luminescent layer away from this n type semiconductor layer;
One metallic reflector, this metallic reflector is formed at the side of this p type semiconductor layer away from this luminescent layer;
One protection adhesion layer, this protection adhesion layer is formed at the side of this metallic reflector away from this p type semiconductor layer, and cover the edge of this metallic reflector, this protection adhesion layer is divided into an adhesion layer and a protective layer, this adhesion layer is formed adhere to bond for importing nitrogen, argon gas and ammonia in advance by the chemical vapour deposition (CVD) of plasma growth form on this metallic reflector, import silane again to be formed with the arbitrary of deposited silicon nitride and silica, and this protective layer uses the chemical vapour deposition (CVD) of plasma growth form to continue deposit and formed on this adhesion layer;
One resilient coating, this resilient coating is formed at the side of this protection adhesion layer away from this metallic reflector, and this p type semiconductor layer, this protection adhesion layer and this resilient coating is complete covers this metallic reflector;
One binder course, this binder course is formed at the side of this resilient coating away from this protection adhesion layer;
One permanent substrate, this permanent substrate is formed at the side of this binder course away from this protection adhesion layer; And
One P-type electrode, this P-type electrode is formed at the side of this permanent substrate away from this binder course.
2. the light emitting diode construction of tool reflector protective layer according to claim 1, is characterized in that, the thickness of this adhesion layer is less than 10 nanometers.
3. the light emitting diode construction of tool reflector protective layer according to claim 1, is characterized in that, the group that the material of this protective layer forms for being selected from silicon nitride, silicon dioxide and titanium dioxide.
4. the light emitting diode construction of tool reflector protective layer according to claim 2, is characterized in that, the thickness of this protective layer is between 30 nanometers and 150 nanometers.
5. a light emitting diode construction for tool reflector protective layer, is characterized in that, comprises:
One N-type electrode;
One n type semiconductor layer, this N-type electrode is formed at the side of this n type semiconductor layer;
One luminescent layer, this luminescent layer is formed at the side of this n type semiconductor layer away from this N-type electrode;
One p type semiconductor layer, this p type semiconductor layer is formed at the side of this luminescent layer away from this n type semiconductor layer;
One metallic reflector, this metallic reflector is formed at the side of this p type semiconductor layer away from this luminescent layer;
One protection adhesion layer, this protection adhesion layer is formed between this p type semiconductor layer and this resilient coating, and allow this protection adhesion layer cover the side edge of this metallic reflector, this protection adhesion layer is divided into an adhesion layer and a protective layer, this adhesion layer is formed adhere to bond for importing nitrogen, argon gas and ammonia in advance by the chemical vapour deposition (CVD) of plasma growth form on this metallic reflector, import silane again to be formed with deposited silicon nitride or silica, and this protective layer uses the chemical vapour deposition (CVD) of plasma growth form on this adhesion layer, continue deposition and formed;
One resilient coating, this resilient coating is formed at the side of this metallic reflector away from this protection adhesion layer, and this p type semiconductor layer, this protection adhesion layer and this resilient coating is complete covers this metallic reflector;
One binder course, this binder course is formed at the side of this resilient coating away from this protection adhesion layer;
One permanent substrate, this permanent substrate is formed at the side of this binder course away from this protection adhesion layer; And
One P-type electrode, this P-type electrode is formed at the side of this permanent substrate away from this binder course.
6. the light emitting diode construction of tool reflector protective layer according to claim 5, is characterized in that, the thickness of this adhesion layer is for being less than 10 nanometers.
7. the light emitting diode construction of tool reflector protective layer according to claim 5, is characterized in that, the group that the material of this protective layer forms for being selected from silicon nitride, silicon dioxide and titanium dioxide.
8. the light emitting diode construction of tool reflector protective layer according to claim 6, is characterized in that, the thickness of this protective layer is between 30 nanometers and 150 nanometers.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410478463.9A CN105489729A (en) | 2014-09-18 | 2014-09-18 | Light emitting diode (LED) structure having reflector protective layer |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410478463.9A CN105489729A (en) | 2014-09-18 | 2014-09-18 | Light emitting diode (LED) structure having reflector protective layer |
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|---|---|
| CN105489729A true CN105489729A (en) | 2016-04-13 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108074943A (en) * | 2016-11-14 | 2018-05-25 | 恒景科技股份有限公司 | Backside illuminated image sensor structure and its manufacturing method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1404132A (en) * | 2001-09-10 | 2003-03-19 | 矽统科技股份有限公司 | Making process of embedded intraconnection wire |
| CN1734798A (en) * | 2004-08-02 | 2006-02-15 | 晶元光电股份有限公司 | Omnidirectional reflector LED with transparent conductive layer |
| CN103594421A (en) * | 2012-08-17 | 2014-02-19 | 格罗方德半导体公司 | Compressive stress transfer in an interlayer dielectric of a semiconductor device |
| US20140151711A1 (en) * | 2012-12-04 | 2014-06-05 | High Power Opto. Inc. | Semiconductor light-emitting device |
| US8766303B2 (en) * | 2012-08-31 | 2014-07-01 | High Power Opto. Inc. | Light-emitting diode with a mirror protection layer |
-
2014
- 2014-09-18 CN CN201410478463.9A patent/CN105489729A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1404132A (en) * | 2001-09-10 | 2003-03-19 | 矽统科技股份有限公司 | Making process of embedded intraconnection wire |
| CN1734798A (en) * | 2004-08-02 | 2006-02-15 | 晶元光电股份有限公司 | Omnidirectional reflector LED with transparent conductive layer |
| CN103594421A (en) * | 2012-08-17 | 2014-02-19 | 格罗方德半导体公司 | Compressive stress transfer in an interlayer dielectric of a semiconductor device |
| US8766303B2 (en) * | 2012-08-31 | 2014-07-01 | High Power Opto. Inc. | Light-emitting diode with a mirror protection layer |
| US20140151711A1 (en) * | 2012-12-04 | 2014-06-05 | High Power Opto. Inc. | Semiconductor light-emitting device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108074943A (en) * | 2016-11-14 | 2018-05-25 | 恒景科技股份有限公司 | Backside illuminated image sensor structure and its manufacturing method |
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