CN105489667B - A kind of electrode lead-out method that small chip is processed into back contact solar battery - Google Patents
A kind of electrode lead-out method that small chip is processed into back contact solar battery Download PDFInfo
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- CN105489667B CN105489667B CN201610098147.8A CN201610098147A CN105489667B CN 105489667 B CN105489667 B CN 105489667B CN 201610098147 A CN201610098147 A CN 201610098147A CN 105489667 B CN105489667 B CN 105489667B
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of electrode lead-out method that small chip is made of back contact solar battery, belongs to technical field of solar batteries.The present invention seeks to be finish-machined to various sizes small chip using Efficient back-contact battery, solve the manufacture method that electrode is drawn, prevent the short circuit caused by the dislocation of adjoining grid line.The present invention's is mainly technically characterized by the shady face of back-contact battery, cut on the dissimilar polarities grid line of the positive and negative electrode exit of each chip and be covered each by insulating barrier and collect the grid line of current lead-through confluxing conductive layer, be made of mask silk-screen printing technique.Implement the chip yield of high voltage of the present invention output up to more than 99%, eliminate the short circuit that gate electrode line confluxes between adjoining grid line caused by set position error, significantly reduce production cost.
Description
Technical field
The invention discloses one kind various high-effect small-sized electrochemical cells are processed into high-effect back contact solar battery
The electrode lead-out method of chip, belong to technical field of solar batteries.
Background technology
At present, back contact solar battery is widely used due to generating efficiency height, and researcher constantly researchs and develops
Go out the different back contact solar battery of many structures（Hereinafter referred to as back contact battery or battery）.Back-contact battery refers to
Launch site n+ electrode and base p+ electrode are respectively positioned on a kind of silicon chip solar cell in silicon solar cell back face, back contacts
Battery eliminates the shading loss of battery front side gate line electrode, effectively increases battery utilization rate and transformation efficiency；It is easily assembled, just
Overleaf, component package coplanar connection, cell piece interval reduces negative pole, improves packaging density, and difficulty reduces.Battery is just
Face does not have a Tu tin band, and smooth surface is homogeneous, attractive in appearance.U s company SUNPOWER patented technology US7339110B1 gives one kind
Typical back-contact battery, the both positive and negative polarity of battery are respectively positioned on the back side of battery, and both positive and negative polarity grid line is in interlaced arrangement, and both positive and negative polarity is in
It is spaced.Back-contact battery is not only used for the photovoltaic module of large-scale power station, while back-contact battery is cut into chi
The battery chip of very little less back-contact（Hereinafter referred to as chip）, it is widely used in consumer electronics product and miniature electric
In product.Prior art, chip is made with back-contact battery, is that technique is drawn using the electrode of high-accuracy PCB contraposition, such as
Chinese Patent Application No. is 201410283104.8 and Application No. 201380017058.1, is substrate with high-precision PCB versions, complete
Extraction is concatenated with the circuit of pcb board into the cutting of back-contact battery and gate electrode line, this material cost and plant equipment cost are high
It is high.
The content of the invention
Problem, particularly back-contact battery be present by retrofit into various sizes for above-mentioned prior art in the present invention
Chip, its electrode lead-out method, it has also become those skilled in the art's key technology urgently to be resolved hurrily.
In consideration of it, the primary and foremost purpose of the present invention is to reduce chip manufacture cost, back contact battery secondary operation is avoided to cut
During electrode draw grid line deviation.
Another object of the present invention is the technique for solving the electrode leads to client that back contact battery is processed to small chip.
The present invention technical solution be：A kind of electrode extraction side that small chip is made of back contact solar battery
Method, including the positive and negative electrode in n+ areas and p+ areas on the shady face of wafer substrate, and spaced phase heteropole grid, its technology
It is characterised by the back electrode face of back contact battery, using grid line insulating coating half tone, using mask silk-screen printing technique, absolutely
Edge layer slurry silk-screen intends the positive and negative electrode exit phase heteropole of each battery chip cut out to the relevant position of substrate, formation
The insulating barrier of property grid line；
Preferably, confluxed conductive layer halftone using grid line, using mask silk-screen printing technique, conductive layer slurry silk-screen is arrived
The insulating barrier of back electrode face insulating layer region, the positive and negative electrode exit grid line for forming each battery chip for intending cutting out conflux
Conductive layer.
Preferably, the insulating barrier of each battery chip cut out is intended, used insulating barrier slurry is UV UV-curings
Type or thermosetting epoxy resin dielectric ink.
Using grid line insulating coating half tone, using mask silk-screen printing technique, the phase of insulating barrier slurry silk-screen to substrate
Position is answered, forms the insulating barrier of the positive and negative electrode exit dissimilar polarities grid line for each battery chip for intending cutting out；
Confluxed conductive layer halftone using grid line, with mask silk-screen printing technique, conductive layer slurry silk-screen to back electrode face
The insulating barrier of insulating layer region, form the conduction that the positive and negative electrode exit grid line for each battery chip for intending cutting out confluxes
Layer.
Preferably, it is to be covered in not cover the different of insulating barrier that conductive layer is covered each by the insulating barrier of dissimilar polarities grid line
Realized on polarity grid line and collect current lead-through.
Preferably, the conductive layer of the positive and negative electrode exit of the chip is to be covered in dissimilar polarities grid line to conflux the exhausted of layer
On velum, including a kind of conductive layer of solderable electrode outlet line, or the copper strips with conductive adhesive layer, aluminium are included using conductive profile
Band, the conducting metal band of tin-coated copper strip form conductive layer.
Substrate including preparing insulating barrier, on the back electrode face of back contact battery, using grid line insulating coating half tone, cover
Film silk-screen printing technique, insulating barrier slurry is included UV ultraviolet-setting or thermosetting epoxy resin dielectric ink silk-screen to substrate
Relevant position, form the insulating barrier of the positive and negative electrode exit dissimilar polarities grid line of each chip for intending cutting out；UV is ultraviolet
The photocuring temperature setting of light curable type is 45 ~ 80 °C, using thermosetting epoxy resin dielectric ink, solidification temperature is arranged to 100 ~
160°C。
On the substrate for preparing insulating barrier, confluxed conductive layer halftone using grid line, using mask silk-screen printing technique,
The conductive layer optional one of which electrocondution slurry silk-screen including copper slurry, silver paste, tin cream slurry to back electrode face insulating barrier
The relevant position in region, form the positive and negative electrode of each battery chip for intending cutting out and conflux conductive layer；Or using conductive profile
Including the copper strips with conductive adhesive layer, aluminium strip, tin-coated copper strip conducting metal band, optional one of which conductive profile confluxes to be formed
The conductive layer of extraction electrode, then using hot pressing or static pressure equipment, conductive material is fitted on the substrate for having prepared insulating barrier
Intend the positive and negative electrode lead-out area relevant position of each battery chip cut out, to form the positive and negative electrode of each battery chip
Conflux and extraction electrode end.Copper slurry is such as used to be used as conductive layer slurry, using the thick expanded metal lath silk-screens of 0.06 ~ 0.15mm, solidification
Temperature setting is 130 ~ 170 °C；Silver paste is such as used as conductive layer slurry, using the thick expanded metal lath silk-screens of 0.06 ~ 0.15mm, Gu
It is 120 ~ 150 °C to change temperature setting；Low temperature tin cream is such as used as conductive layer slurry, using the thick steel plate twines of 0.1 ~ 0.2mm
Print, is solidified, solidification temperature is arranged to 130 ~ 170 °C, and line speed is arranged to 0.6 ~ 1.2m/min with reflow ovens.
Described electrode converging conductive layer is not weldable material, then need to be electric by the positive and negative extraction of each battery chip on its surface
Pole position and pad size demand, then the solderable electrode layer of silk-screen（Such as can bit copper slurry, silver paste, tin cream）, to make electrode outlet line
Welding electrode.As use can bit copper slurry be used as pad slurry, using 0.04 ~ 0.08mm thickness expanded metal lath silk-screen, solidification temperature
It is arranged to 130 ~ 170 °C；Solderable silver paste is such as used as pad slurry, using the thick expanded metal lath silk-screens of 0.04 ~ 0.08mm, solidification
Temperature setting is 120 ~ 150 °C；Low temperature tin cream is such as used, using the thick expanded metal lath silk-screens of 0.1 ~ 0.2mm, to be adopted as pad slurry
Solidified with reflow ovens, center solidification temperature is arranged to 130 ~ 170 °C.
Using high-precision laser silicon chip cutter or emery wheel silicon chip cutter, intend cutting by back electrode silicon solar cell chip
The cutting position design drawing of each baby battery chip cut out, back electrode silicon solar cell chip cutting is independent positive and negative into band
The baby battery chip of pole output electrode.
Good effect caused by the present invention：
Back electrode silicon solar cell can be cut into the baby battery chip for appointing geomery by power demand, form the sun
The chip of miniaturization and the high voltage output of energy battery component.
Chip yield passes through chip mask silk printing screen domain shape and the particular design of set bit flag, and system up to more than 99%
Make the high-precision control of process, eliminate the adjoining both positive and negative polarity caused by covering position error when the gate electrode line of battery chip confluxes
Short circuit problem between grid line.
Without pre-determined bit, the baby battery chip compared with existing SMT technologies process back electrode silicon solar cell chip technology
After cutting, component is concatenated into welding method, without doing accurate pre-determined bit to each baby battery to realize the concatenation of component,
Greatly improve production efficiency.
Processing cost is saved, technology is concatenated using this chip, material only needs plain conductor or general painting tin band, with common
Flatiron can complete component concatenation, save the processing cost of solar cell module.Existing SMT processes back electrode silicon solar
Battery chip technique, high-accuracy PCB is used as substrate, completing solar cell module with SMT machines and reflow machine concatenates, material
Expect that cost and plant equipment cost are very high.
The making that particularly insulating barrier makes, good place mat is made to make the conductive layer that confluxes, has effectively prevented battery from carrying on the back
Face for making conflux conductive layer when the short circuit of positive and negative gate-shaped electrode.It is not present after insulation paste solidification short-circuit caused by skew.
Brief description of the drawings
Fig. 1 are the cross-sectional views of United States Patent (USP) US7339110B1 back contact battery, in figure, back contact battery
10 positive pole grid line 50 and negative pole grid line 52 is spaced.
Fig. 2 are the shady face structural representations of United States Patent (USP) US7339110B1 back contact battery.
Fig. 3 are the shady face electrode lead-out structure schematic diagrames of the battery chip after the back contact battery 10 of the present invention is cut,
Insulating barrier 1 in figure is covered each by positive pole grid line 50 and negative pole grid line 52 at both ends, and conductive layer 2 is covered on insulating barrier 1, conductive
Layer 2 respectively confluxes the negative pole grid line 52 for not covering insulating barrier 1 and positive pole grid line 50 conducting at both ends.
Fig. 4 are A-A cross-sectional views in Fig. 3, and insulating barrier 1 covers negative pole grid line 52, and conductive layer 2 is by positive pole grid line
50 conflux conducting.
Fig. 5 are B-B cross-sectional views in Fig. 3, and insulating barrier 1 covers positive pole grid line 50, and conductive layer 2 is by negative pole grid line
52 conflux conducting.
Fig. 6 are the shady face electrode lead-out structure schematic diagrames before the back contact battery cutting of the embodiment of the present invention 1, are being carried on the back
Silk-screen insulating barrier 1 and conductive layer 2 on the position of battery chip are corresponded to before the shady face cutting of contact battery 10.
Fig. 7 are the electrode lead-out structure signals of the battery chip of upper position after the back contact battery 10 in Fig. 6 is cut
Figure, positive pole exit is the positive terminal 5 of back contact battery 10 itself, and negative pole exit is by the positive pole grid line of back contact battery 10
50 are first covered with insulating barrier 1, then negative pole grid line 52 is confluxed conducting with conductive layer 2.
Fig. 8 are the electrode lead-out structure signals of the battery chip in centre position after the back contact battery 10 in Fig. 6 is cut
Figure, positive pole exit is first to cover the negative pole grid line 52 of back contact battery 10 with insulating barrier 1, then with conductive layer 2 by positive electrode gate
Line 50 confluxes conducting, and negative pole exit is first to cover the positive pole grid line 50 of back contact battery 10 with insulating barrier 1, then uses conductive layer
2 conflux negative pole grid line 52 conducting.
Fig. 9 are the electrode lead-out structure signals of the battery chip of lower position after the back contact battery 10 in Fig. 6 is cut
Figure, positive pole exit is first to cover the negative pole grid line 52 of back contact battery 10 with insulating barrier 1, then with conductive layer 2 by positive electrode gate
Line 50 confluxes conducting, and negative pole exit is the negative pole end 6 of of back contact battery 10 itself.
Figure 10 are the positive structure schematics of the embodiment of the present invention 2, when conductive layer 2 is not weldable material, in conductive layer
Silk-screen can layer 3 on 2.
Figure 11 are the C-C cross-sectional views in Figure 10.
Figure 12 are the cross-sectional views of the embodiment of the present invention 3, and conductive layer 2 uses the copper strips 8 with conductive adhesive layer 7, led
Electric glue-line 7 is with being bonded in negative pole grid line 52（Or positive pole grid line 50）On insulating barrier 1.
Figure 13 are the copper strips 8 with conductive adhesive layer 7 in Figure 12, there is one layer of conductive adhesive layer 7 below copper strips 8.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is described in detail.
Embodiment 1
As shown in fig. 6, the back contact solar cell 10 of this implementation is the 125X125mm of SUNPOWER companies of U.S. production
Specification, it is necessary to the position as shown in line of cut 4 cuts out the battery chip that 18 block specifications are 32.4X20.9mm, left and right arrangement
For laterally 3 pieces, 6 pieces of longitudinal direction up and down, left and right edges reserve silicon chip and can used with other sizes, and the 3 of edge piece are being just on top
Pole is drawn, and as shown in Figure 7 using the positive pole exit 5 of back contact battery 10 itself, negative pole exit is by positive pole grid line 50
After being covered by insulating barrier 1, it will not confluxed conducting by the negative pole grid line 52 that insulating barrier 1 covers by conductive layer 2 on insulating barrier 1,
3 pieces following of negative pole is drawn, as shown in Figure 9 using the negative pole exit 6 of back contact battery 10 itself, positive electrode exit
After being covered by negative pole grid line 52 with insulating barrier 1, then the positive pole grid line that will do not covered on insulating barrier 1 with conductive layer 2 by insulating barrier 1
50 collect conducting, 12 pieces of battery chips in centre position, and top as shown in Figure 8 is positive pole exit, are drawn below for negative pole
End, positive pole exit on top first cover negative pole grid line 52 with insulating barrier 1, then conductive layer 2 is covered on insulating barrier 1, lead
Electric layer 2 will not collect current lead-through by the positive pole grid line 50 that insulating barrier 1 covers, and forms positive pole exit, draws in following negative pole
Go out end first to cover positive pole grid line 50 by insulating barrier 1, then conductive layer 2 is covered on insulating barrier 1, conductive layer 2 will be by insulating barrier 1
The negative pole grid line 52 of covering confluxes conducting, forms negative pole exit.
Manufacturing process is as follows：
First the backlight of back contact battery 10 is placed on silk-screen platform up, grid line insulating coating half tone and the back of the body are connect
The loci in electric shock pond 10 carries out accurate set position, and then using mask silk-screen printing technique, the ink slurry silk-screen of insulating barrier 1 is arrived
The relevant position of the shady face of back contact battery 10, the positive and negative electrode exit for forming each battery chip for intending cutting out are different
The insulating barrier 1 of polarity grid line, i.e., negative pole grid line 52 is covered into insulating barrier 1 in the positive pole exit of battery chip, drawn in negative pole
Positive pole grid line 50 is covered insulating barrier 1 by end.The used slurry of insulating barrier 1 can be UV ultraviolet-setting or heat cured epoxy tree
Fat dielectric ink, using the thick expanded metal lath silk-screens of 0.06mm；UV ultraviolet-setting dielectric inks are such as used, UV UV-curing machines are consolidated
Change, solidification temperature is arranged to 65 °C；Thermosetting epoxy resin dielectric ink is such as used, is solidified using Electric heat oven, solidification temperature
It is arranged to 120 °C.
On the shady face of back contact battery 10 for preparing insulating barrier 1, confluxed the half tone of conductive layer 2 using grid line, used
Mask silk-screen printing technique, the electrocondution slurry of conductive layer 2（Such as copper slurry, silver paste, tin cream）Silk-screen is formed and intended to relevant position
The positive and negative electrode of each battery chip cut out confluxes conductive layer 2, i.e., will be not by insulating barrier 1 in positive pole exit conductive layer 2
The positive pole grid line 50 of covering confluxes conducting, will not confluxed in negative pole exit conductive layer 2 by the negative pole grid line 52 that insulating barrier 1 covers
Conducting.Such as starched by the use of copper as conductive layer slurry, using the thick expanded metal lath silk-screens of 0.15mm, solidification temperature is arranged to 150 °C；Such as use
Silver paste is as conductive layer slurry, and using the thick expanded metal lath silk-screens of 0.15mm, solidification temperature is arranged to 130 °C；Such as use low temperature tin
Cream, using the thick expanded metal lath silk-screens of 0.2mm, is solidified, center solidification temperature is arranged to as conductive layer slurry using reflow ovens
160°C。
Line 4 is cut to size back contact battery 10 is cut into battery chip, first cut left and right edges part, then
Again by other cuttings, can be used after cutting.
Embodiment 2
In embodiment 1, can as shown in Figure 10 and Figure 11, in conductive layer 2 if conductive layer 2 is not weldable material
On pad silk-screened conductive can layer 3, can welding electrode lead-out wire on layer 3.As use can bit copper slurry as can layer 3
Pad slurry, using the thick expanded metal lath silk-screens of 0.06mm, solidification temperature is arranged to 140 °C；Solderable silver paste is such as used as solderable
3 pad slurry of layer, using the thick expanded metal lath silk-screens of 0.06mm, solidification temperature is arranged to 120 °C；Such as using low temperature tin cream to be used as can
Layer pad slurry, using the thick expanded metal lath silk-screens of 0.1mm, solidified using reflow ovens, center solidification temperature is arranged to 160 °C.
Embodiment 3
As shown in Figure 12 and Figure 13, taken in embodiment 1 using the conductive profile of the wide copper strips 8 with conductive adhesive layer 7 of 2mm
For conductive layer 2, using heat pressing process, the copper strips 8 with conductive adhesive layer 7 is fitted to the back contact battery for having prepared insulating barrier 1
Intend the positive and negative electrode lead-out area relevant position of each battery chip cut out on 10, to form the positive and negative of each battery chip
Electrode converging and extraction electrode end.
Manufacturing process is as follows：
First the backlight of back contact battery 10 is placed on silk-screen platform up, grid line insulating coating half tone and the back of the body are connect
The loci in electric shock pond 10 carries out accurate set position, and then using mask silk-screen printing technique, the ink slurry silk-screen of insulating barrier 1 is arrived
The relevant position of the shady face of back contact battery 10, the positive and negative electrode exit for forming each battery chip for intending cutting out are different
The insulating barrier 1 of polarity grid line, i.e., negative pole grid line 52 is covered into insulating barrier 1 in the positive pole exit of battery chip, drawn in negative pole
Positive pole grid line 50 is covered insulating barrier 1 by end.
By on the shady face of back contact battery 10 for preparing insulating barrier 1, hot press is placed into by hot pressing machine positioning device
On work top, start hot press switch, hot press pastes the copper strips 8 with conductive adhesive layer 7 cut by design size requirement
Close the positive and negative electrode lead-out area phase for each battery chip for intending cutting out in the back contact battery 10 for prepared insulating barrier 1
Position is answered, the positive and negative electrode for forming each battery chip confluxes and extraction electrode end.
Back contact battery 10 is cut into battery chip by line of cut 4, you can use.
Claims (11)
1. a kind of electrode lead-out method that small chip is made of back contact solar battery, including the backlight positioned at wafer substrate
Mian Shang n+ areas and the positive and negative electrode in p+ areas, and spaced phase heteropole grid, its technical characteristic are the backlights in back contact battery
On face, using grid line insulating coating half tone and mask silk-screen printing technique, position is accurately covered to the loci of back contact battery, absolutely
Edge layer slurry silk-screen intends the positive and negative electrode exit phase heteropole of each battery chip cut out to the relevant position of substrate, formation
Property grid line insulating barrier, battery chip positive electrode exit by negative pole grid line cover insulating barrier, will just in negative pole exit
Pole grid line covering insulating barrier；
Confluxed conductive layer halftone and mask silk-screen printing technique or hot-press equipment or static pressure equipment using grid line, conductive layer slurry
Silk-screen or conducting metal conductive profile fit to the insulating barrier of back electrode face insulating layer region, form each battery for intending cutting out
The conductive layer that the positive and negative electrode exit grid line of chip confluxes；
Each battery chip that described plan is cut out is the small chip with independent both positive and negative polarity output electrode, and what is cut out is each small
Chip is connected into battery chip component or connection in series-parallel component in its electrode leads to client with electric iron sealing wire.
2. a kind of electrode lead-out method that small chip is made of back contact solar battery according to claim 1, its
Be technically characterized in that be each battery chip that foregoing plan is cut out insulating barrier, used insulating barrier slurry is UV
Ultraviolet-setting or thermosetting epoxy resin dielectric ink.
3. a kind of electrode lead-out method that small chip is made of back contact solar battery according to claim 1, its
Technical characteristic is the expanded metal lath silk-screen UV ultraviolet-setting dielectric inks that 0.04 ~ 0.10mm thickness is used in described insulating barrier,
Solidification temperature is arranged to 45 ~ 80 °C.
4. a kind of electrode lead-out method that small chip is made of back contact solar battery according to claim 1, its
Technical characteristic is the insulating barrier for each battery chip that described plan is cut out, with the expanded metal lath silk-screen of 0.04 ~ 0.10mm thickness
Thermosetting epoxy resin dielectric ink, solidification temperature are arranged to 100 ~ 160 °C.
5. a kind of electrode lead-out method that small chip is made of back contact solar battery according to claim 1, its
It is technically characterized in that the grid line of the positive and negative electrode exit for each battery chip that described plan is cut out confluxes conductive layer, also wraps
Include and use electrocondution slurry, wherein copper slurry is used as conductive layer, and using the thick expanded metal lath silk-screens of 0.06 ~ 0.15mm, solidification temperature is set
For 130 ~ 170 °C.
6. a kind of electrode lead-out method that small chip is made of back contact solar battery according to claim 5, its
It is technically characterized in that described grid line confluxes conductive layer, is included by the use of silver paste as conductive layer, using the steel of 0.06 ~ 0.15mm thickness
Expanded metals silk-screen, solidification temperature are arranged to 120 ~ 150 °C.
7. a kind of electrode lead-out method that small chip is made of back contact solar battery according to claim 5, its
Described conductive layer is technically characterized in that, in addition to by the use of low temperature tin cream as conductive layer slurry, using the thick steel plates of 0.1 ~ 0.2mm
Twine prints, and is solidified with reflow ovens, center solidification temperature is arranged to 130 ~ 170 °C.
8. a kind of electrode lead-out method that small chip is made of back contact solar battery according to claim 1, its
It is technically characterized in that described conducting metal conductive profile for the copper strips with conductive adhesive layer, aluminium strip, tin-coated copper strip.
9. a kind of electrode lead-out method that small chip is made of back contact solar battery according to claim 1, its
It is technically characterized in that described conductive layer is no-welding material, the positive and negative extraction electrode position of each battery chip is pressed on its surface
With pad size demand, then the solderable electrode layer of silk-screen, including can bit copper slurry, silver paste, tin cream, make electrode outlet line welding electricity
Pole.
10. a kind of electrode lead-out method that small chip is made of back contact solar battery according to claim 1, its
Each battery chip that described plan is cut out is technically characterized in that, is cut using high-precision laser silicon chip cutter or emery wheel silicon chip
Cutting mill.
11. a kind of electrode lead-out method that small chip is made of back contact solar battery according to claim 10,
It is technically characterized in that each battery chip that described plan is cut out, and back electrode silion cell is cut into defeated with independent both positive and negative polarity
Go out the small chip of electrode.
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| CN103035779A (en) * | 2011-10-06 | 2013-04-10 | 三星Sdi株式会社 | Photovoltaic device |
| CN103594533A (en) * | 2013-11-26 | 2014-02-19 | 合肥海润光伏科技有限公司 | Back-contact back-junction solar battery three-dimension electrode and manufacturing method thereof |
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