CN105489383A - Preparation method of quantum dot sensitized solar cell light cathode - Google Patents
Preparation method of quantum dot sensitized solar cell light cathode Download PDFInfo
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- CN105489383A CN105489383A CN201510998902.3A CN201510998902A CN105489383A CN 105489383 A CN105489383 A CN 105489383A CN 201510998902 A CN201510998902 A CN 201510998902A CN 105489383 A CN105489383 A CN 105489383A
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- quantum dot
- titanium dioxide
- chalcogenide
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- sensitized solar
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- 239000002096 quantum dot Substances 0.000 title claims abstract description 128
- 238000002360 preparation method Methods 0.000 title claims abstract description 26
- 150000004770 chalcogenides Chemical class 0.000 claims abstract description 16
- 239000010936 titanium Substances 0.000 claims abstract description 10
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 10
- 239000002904 solvent Substances 0.000 claims abstract description 8
- LCUOIYYHNRBAFS-UHFFFAOYSA-N copper;sulfanylideneindium Chemical class [Cu].[In]=S LCUOIYYHNRBAFS-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000003381 stabilizer Substances 0.000 claims abstract description 7
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 claims abstract description 6
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 claims abstract description 6
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000005642 Oleic acid Substances 0.000 claims abstract description 6
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 claims abstract description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000011521 glass Substances 0.000 claims abstract description 6
- 238000010438 heat treatment Methods 0.000 claims abstract description 6
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 claims abstract description 6
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 claims abstract description 6
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 claims abstract description 6
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims abstract description 5
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims abstract description 5
- MRPWWVMHWSDJEH-UHFFFAOYSA-N antimony telluride Chemical class [SbH3+3].[SbH3+3].[TeH2-2].[TeH2-2].[TeH2-2] MRPWWVMHWSDJEH-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052711 selenium Inorganic materials 0.000 claims abstract description 5
- 239000011669 selenium Substances 0.000 claims abstract description 5
- QGLWBTPVKHMVHM-KTKRTIGZSA-N (z)-octadec-9-en-1-amine Chemical compound CCCCCCCC\C=C/CCCCCCCCN QGLWBTPVKHMVHM-KTKRTIGZSA-N 0.000 claims abstract description 3
- PCRGAMCZHDYVOL-UHFFFAOYSA-N copper selanylidenetin zinc Chemical class [Cu].[Zn].[Sn]=[Se] PCRGAMCZHDYVOL-UHFFFAOYSA-N 0.000 claims abstract description 3
- WILFBXOGIULNAF-UHFFFAOYSA-N copper sulfanylidenetin zinc Chemical class [Sn]=S.[Zn].[Cu] WILFBXOGIULNAF-UHFFFAOYSA-N 0.000 claims abstract description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 52
- 239000004408 titanium dioxide Substances 0.000 claims description 26
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 21
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 15
- 239000002245 particle Substances 0.000 claims description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 10
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 9
- 238000000975 co-precipitation Methods 0.000 claims description 8
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 claims description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- 206010070834 Sensitisation Diseases 0.000 claims description 5
- 239000005864 Sulphur Substances 0.000 claims description 5
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 239000007789 gas Substances 0.000 claims description 5
- 230000008313 sensitization Effects 0.000 claims description 5
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 claims description 4
- CMXPERZAMAQXSF-UHFFFAOYSA-M sodium;1,4-bis(2-ethylhexoxy)-1,4-dioxobutane-2-sulfonate;1,8-dihydroxyanthracene-9,10-dione Chemical compound [Na+].O=C1C2=CC=CC(O)=C2C(=O)C2=C1C=CC=C2O.CCCCC(CC)COC(=O)CC(S([O-])(=O)=O)C(=O)OCC(CC)CCCC CMXPERZAMAQXSF-UHFFFAOYSA-M 0.000 claims description 4
- 150000003608 titanium Chemical class 0.000 claims description 4
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 claims description 3
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 8
- 230000005540 biological transmission Effects 0.000 abstract description 6
- SOQBVABWOPYFQZ-UHFFFAOYSA-N oxygen(2-);titanium(4+) Chemical class [O-2].[O-2].[Ti+4] SOQBVABWOPYFQZ-UHFFFAOYSA-N 0.000 abstract 2
- 239000012300 argon atmosphere Substances 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- UIPVMGDJUWUZEI-UHFFFAOYSA-N copper;selanylideneindium Chemical class [Cu].[In]=[Se] UIPVMGDJUWUZEI-UHFFFAOYSA-N 0.000 abstract 1
- 239000012454 non-polar solvent Substances 0.000 abstract 1
- 229910052717 sulfur Inorganic materials 0.000 abstract 1
- 239000011593 sulfur Substances 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 16
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 12
- 229940007424 antimony trisulfide Drugs 0.000 description 7
- 239000006185 dispersion Substances 0.000 description 7
- 239000007788 liquid Substances 0.000 description 7
- NVWBARWTDVQPJD-UHFFFAOYSA-N antimony(3+);trisulfide Chemical compound [S-2].[S-2].[S-2].[Sb+3].[Sb+3] NVWBARWTDVQPJD-UHFFFAOYSA-N 0.000 description 4
- OQRNKLRIQBVZHK-UHFFFAOYSA-N selanylideneantimony Chemical compound [Sb]=[Se] OQRNKLRIQBVZHK-UHFFFAOYSA-N 0.000 description 4
- 150000001298 alcohols Chemical class 0.000 description 3
- 239000010405 anode material Substances 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- BYDWYMHNDCIZHL-UHFFFAOYSA-N [O-2].[O-2].S.[Ti+4].[Cu+2].[In+3] Chemical compound [O-2].[O-2].S.[Ti+4].[Cu+2].[In+3] BYDWYMHNDCIZHL-UHFFFAOYSA-N 0.000 description 2
- MEFOCRCZAVYIPY-UHFFFAOYSA-N [Sb+]=[Se].[O-2].[O-2].[Ti+4] Chemical compound [Sb+]=[Se].[O-2].[O-2].[Ti+4] MEFOCRCZAVYIPY-UHFFFAOYSA-N 0.000 description 2
- ZIYCGYQXFASKKC-UHFFFAOYSA-N antimony(3+) oxygen(2-) titanium(4+) Chemical compound [Sb+3].[O-2].[O-2].[Ti+4] ZIYCGYQXFASKKC-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- OMZSGWSJDCOLKM-UHFFFAOYSA-N copper(II) sulfide Chemical compound [S-2].[Cu+2] OMZSGWSJDCOLKM-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000002411 thermogravimetry Methods 0.000 description 1
- 238000012032 thrombin generation assay Methods 0.000 description 1
- 208000014903 transposition of the great arteries Diseases 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/042—Electrodes or formation of dielectric layers thereon characterised by the material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Hybrid Cells (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a preparation method of a quantum dot sensitized solar cell light cathode. The preparation method comprises the following steps: firstly dispersing titanium dioxide quantum dots and one of sulfur/selenium/antimony telluride quantum dots, copper-indium sulfide quantum dots, copper-indium-selenium quantum dots, copper-zinc-tin-sulfur quantum dots and copper-zinc-tin-selenium quantum dots which contain an oleic acid or oleylamine stabilizer in a same non-polar solvent respectively to form oil-phase solutions; then uniformly mixing two oil-phase solutions, and adding a solar solvophobic solvent so that the titanium dioxide quantum dots and chalcogenide quantum dots are coprecipitated to form a titanium dioxide-chalcogenide quantum dot aggregate; and finally coating the titanium dioxide-chalcogenide quantum dot aggregate on conducting glass through titanium tetrachloride treatment, and carrying out heat treatment under an argon atmosphere to form the quantum dot sensitized solar cell light cathode. The preparation method disclosed by the invention is simple, the stability and light-induced electron transmission performance of a quantum dot sensitized solar cell can be obviously improved, and the dark reaction of the cell is reduced.
Description
Technical field
The present invention relates to chemical solar cell field of new, especially relate to the preparation method of quantum dot sensitized solar battery light anode.
Background technology
Quantum dot sensitized solar cell is a kind of new chemical solar cell, and with inorganic semiconductor compound quanta point material for sensitizer, operation principle is similar to DSSC.There is the features such as the simple and environmental friendliness of low cost, preparation technology, therefore have a good application prospect, be expected to alternative existing high cost solar cell.
Light anode is the key components of quantum dot sensitized solar cell, bears absorption sunlight, carries out the effect of opto-electronic conversion and light induced electron transmission.The quality of quantum dot sensitized solar battery light anode performance determines primarily of electron transport material, quantum dot sensitizer and both combinations.The preparation method of tradition light anode is bridged to quantum dot sensitizer on titanium dioxide nanocrystalline light anode with organic bridging agents such as TGAs.The method can the effective nanocrystalline smooth anode of sensitized titanium dioxide, but bridging agent used is generally organic substance, can affect battery long-time stability, hinders the transmission of light induced electron simultaneously, causes dark reaction.The light anode adopting the method to prepare needs to deposit ZnS, ZnSe, SiO
2deng surface protectant.
Therefore, exploring a kind of straightforward procedure, to prepare first stability, efficiently light anode be the key technology that quantum dot sensitized solar cell moves towards practical.Titanium dioxide nanocrystalline is excellent stable light anode current transferring material, and chalcogenide quantum dot is efficient sensitizer.Titanium dioxide nanocrystalline particle diameter is reduced to quantum dot yardstick further, then with chalcogenide quantum dot direct combination, can uniform composite construction be formed.Meanwhile, in compound system, the network configuration of electron propagation ducts and quantum dot sensitizer IPN can be formed, exist without other impurity, thus be conducive to the generation of light induced electron, quick separating and transmission.
In view of this, inventor is on the basis through a series of research and test, and develop a kind of novel processing step of quantum dot sensitized solar battery light anode, this case produces thus.
Summary of the invention
The object of the present invention is to provide a kind of preparation method of quantum dot sensitized solar battery light anode, its method is simple, and the preparation that can be efficient, stable quantum dot sensitized solar cell provides excellent light anode material.
To achieve these goals, the present invention adopts following technical scheme:
A preparation method for quantum dot sensitized solar battery light anode, preparation process is as follows:
The first step, all be the titanium dioxide quantum dot of 1-7nm containing the particle diameter of oleic acid or oleyl amine stabilizer and chalcogenide quantum dot is dispersed in same non-polar solven respectively by commercially available, to obtain concentration be respectively 0.01-0.1mol/L titanium dioxide quantum dot oil-phase solution and concentration is 0.01-0.1mol/L chalcogenide quantum dot oil-phase solution; Wherein, described non-polar solven is the one in cyclohexane, toluene, heptane, octane;
Second step, by above-mentioned titanium dioxide quantum dot oil-phase solution and above-mentioned chalcogenide quantum dot oil-phase solution by volume 1/1-9/1 mix, in the quantum dot oil phase mixed liquor obtained, add the polarity being equivalent to quantum dot oil phase mixed liquor 2-10 times of volume hates solvent to make titanium dioxide quantum dot and the co-precipitation of chalcogenide quantum dot out, forms titanium dioxide-chalcogenide quantum dot aggregate; Wherein, polarity hates solvent to be one in ethanol, methyl alcohol, acetone;
3rd step, is coated on the electro-conductive glass of titanium tetrachloride process by this titanium dioxide-chalcogenide quantum dot aggregate, and under argon gas atmosphere, 300-500 DEG C of heat treatment 30-60min forms quantum dot sensitization solar battery light anode.
In the above-mentioned first step, described chalcogenide quantum dot is the one in sulphur/selenium/antimony telluride quantum dot, copper indium sulphur quantum dot, copper indium diselenide quantum dot, copper-zinc-tin-sulfur quantum dot, copper-zinc-tin-selenium quantum dot.
Described chalcogenide quantum dot is sulphur/selenium/antimony telluride quantum dot.
The electron transport material of described quantum dot sensitized solar battery light anode and quantum dot sensitized material are present in titanium dioxide-chalcogenide quantum dot aggregate jointly, and this titanium dioxide-chalcogenide quantum dot aggregate be add from the described quantum dot oil phase mixed liquor mixed polarity hate solvent after co-precipitation out, formed particle diameter be 0.1-0.5 μm of spherical structure aggregate.
After adopting such scheme, preparation method of the present invention is simple, light anode hates solvent action co-precipitation to separate out by the oil phase dispersion liquid of titanium dioxide quantum dot and chalcogenide quanta point material and polarity, form the sub-micron aggregate with spherical structure, this sub-micron aggregate can make each quanta point material more stable, simultaneously without other impurity, electron propagation ducts and sensitizer can form good interpenetrating networks composite construction, be conducive to the generation of light induced electron, quick separating and transmission, the stability of quantum dot sensitized solar cell can be significantly improved, light induced electron transmission performance and the dark reaction of reduction battery.Thus provide excellent light anode material for the preparation of efficient, stable quantum dot sensitized solar cell, establish good basis for the practical of such battery simultaneously.With the quantum dot sensitized solar cell that the light anode prepared by the inventive method is assembled, photoelectric properties and stability all exceed the traditional titanium dioxide nanocrystalline light anode adopting identical sensitizer.In addition, this smooth anode material of the present invention also can be used in the preparation of the opto-electronic conversion such as perovskite solar cell, ultracapacitor and memory device.
Embodiment
Embodiment one:
The preparation method of a kind of quantum dot sensitized solar battery light anode of the present invention, preparation process is as follows:
The first step, all be the titanium dioxide quantum dot of 3.6nm containing the particle diameter of oleic acid stabilizer and antimony selenide quantum dot is distributed in 100mL cyclohexane respectively by commercially available, form the antimony selenide quantum dot ring hexane solution that titanium dioxide quantum dot ring hexane solution that concentration is 0.05mol/L and concentration are 0.05mol/L respectively;
Second step, the antimony selenide quantum dot ring hexane solution be titanium dioxide quantum dot ring hexane solution and the 30mL concentration of 0.05mol/L by 70mL concentration being 0.05mol/L mixes, 200mL acetone is added in the quantum dot oil phase mixed liquor obtained, make titanium dioxide quantum dot and the co-precipitation of antimony selenide quantum dot out, form spherical tio2-antimony selenide quantum dot aggregate that particle diameter is 0.1-0.5 μm;
3rd step, 0.1g titanium dioxide-antimony selenide quantum dot aggregate is dispersed in 10mL ethanol, obtain the alcohol dispersion liquid of titanium dioxide-antimony selenide quantum dot aggregate, this alcohol dispersion liquid be coated on the electro-conductive glass after the titanium tetrachloride aqueous solution process 30min being 0.5mol/L through 70 DEG C of concentration, under 450 DEG C of argon gas atmosphere, heat treatment 30min forms the quantum dot sensitized solar battery light anode that thickness is 12 μm.
By prepared light anode and goldleaf to electrode and poly-3-hexyl thiophene assembling quantum dot sensitization solar battery, at AM1.5 and 100mWcm
-2test under standard sunlight, photoelectric conversion efficiency reaches 5.3%.
Embodiment two:
The preparation method of a kind of quantum dot sensitized solar battery light anode of the present invention, preparation process is as follows:
The first step, be distributed in 100mL toluene by commercially available respectively containing the titanium dioxide quantum dot of particle diameter 5nm of oleic acid stabilizer and the copper indium sulphur quantum dot of the particle diameter 3nm of oil-containing amine stabiliser, form the copper indium sulphur quantum dot toluene solution that titanium dioxide quantum dot toluene solution that concentration is 0.05mol/L and concentration are 0.05mol/L respectively;
Second step, the copper indium sulphur quantum dot toluene solution be titanium dioxide quantum dot toluene solution and the 40mL concentration of 0.05mol/L by 60mL concentration being 0.05mol/L mixes, 200mL methyl alcohol is added in the quantum dot oil phase mixed liquor obtained, make titanium dioxide quantum dot and the co-precipitation of copper indium sulphur quantum dot out, form spherical tio2-copper indium sulphur quantum dot aggregate that particle diameter is 0.1-0.5 μm;
3rd step, by 0.1g titanium dioxide-copper indium sulphur quantum dot aggregate is dispersed in 10mL ethanol, obtain the alcohol dispersion liquid of titanium dioxide-copper indium sulphur quantum dot aggregate, this alcohol dispersion liquid be coated on the electro-conductive glass after the titanium tetrachloride aqueous solution process 30min being 0.5mol/L through 70 DEG C of concentration, under 400 DEG C of argon gas atmosphere, heat treatment 30min forms the quantum dot sensitized solar battery light anode that thickness is 12 μm.
By prepared light anode and copper sulfide to electrode and 2mol/LNa
2the aqueous electrolyte assembling quantum dot sensitization solar battery of S and 2mol/LS, at AM1.5 and 100mWcm
-2test under standard sunlight, photoelectric conversion efficiency reaches 5.2%.
Embodiment three:
The preparation method of a kind of quantum dot sensitized solar battery light anode of the present invention, preparation process is as follows:
The first step, all be distributed in 100mL octane respectively containing the titanium dioxide quantum dot of the particle diameter 6nm of oleic acid stabilizer and the antimony trisulfide quantum dot of particle diameter 2nm by commercially available, to form concentration be respectively the titanium dioxide quantum dot octane solution of 0.05mol/L and concentration is the antimony trisulfide quantum dot octane solution of 0.05mol/L;
Second step, the antimony trisulfide quantum dot octane solution be titanium dioxide quantum dot octane solution and the 50mL concentration of 0.05mol/L by 50mL concentration being 0.05mol/L mixes, 200mL ethanol is added in the quantum dot oil phase mixed liquor obtained, make titanium dioxide quantum dot and the co-precipitation of antimony trisulfide quantum dot out, form spherical tio2-antimony trisulfide quantum dot aggregate that particle diameter is 0.1-0.5 μm;
3rd step, 0.1g titanium dioxide-antimony trisulfide quantum dot aggregate is dispersed in 10mL ethanol, obtain the alcohol dispersion liquid of titanium dioxide-antimony trisulfide quantum dot aggregate, this alcohol dispersion liquid be coated on the electro-conductive glass after the titanium tetrachloride aqueous solution process 30min being 0.5mol/L through 70 DEG C of concentration, under 350 DEG C of argon gas atmosphere, heat treatment 30min forms the quantum dot sensitized solar battery light anode that thickness is 12 μm.
By prepared light anode and goldleaf to electrode and poly-3-hexyl thiophene assembling quantum dot sensitization solar battery, at AM1.5 and 100mWcm
-2test under standard sunlight, photoelectric conversion efficiency reaches 5.6%.
These are only preferred embodiment of the present invention, the restriction not to protection scope of the present invention, all equivalent variations done according to the mentality of designing of this case, all fall into the protection range of this case.
Claims (4)
1. a preparation method for quantum dot sensitized solar battery light anode, is characterized in that, preparation process is as follows:
The first step, all be the titanium dioxide quantum dot of 1-7nm containing the particle diameter of oleic acid or oleyl amine stabilizer and chalcogenide quantum dot is dispersed in same non-polar solven respectively by commercially available, to obtain concentration be respectively 0.01-0.1mol/L titanium dioxide quantum dot oil-phase solution and concentration is 0.01-0.1mol/L chalcogenide quantum dot oil-phase solution; Wherein, described non-polar solven is the one in cyclohexane, toluene, heptane, octane;
Second step, by above-mentioned titanium dioxide quantum dot oil-phase solution and above-mentioned chalcogenide quantum dot oil-phase solution by volume 1/1-9/1 mix, in the quantum dot oil phase mixed liquor obtained, add the polarity being equivalent to quantum dot oil phase mixed liquor 2-10 times of volume hates solvent to make titanium dioxide quantum dot and the co-precipitation of chalcogenide quantum dot out, forms titanium dioxide-chalcogenide quantum dot aggregate; Wherein, polarity hates solvent to be one in ethanol, methyl alcohol, acetone;
3rd step, is coated on the electro-conductive glass of titanium tetrachloride process by this titanium dioxide-chalcogenide quantum dot aggregate, and under argon gas atmosphere, 300-500 DEG C of heat treatment 30-60min forms quantum dot sensitization solar battery light anode.
2. the preparation method of quantum dot sensitized solar battery light anode as claimed in claim 1, it is characterized in that: in the above-mentioned first step, described chalcogenide quantum dot is the one in sulphur/selenium/antimony telluride quantum dot, copper indium sulphur quantum dot, copper indium diselenide quantum dot, copper-zinc-tin-sulfur quantum dot, copper-zinc-tin-selenium quantum dot.
3. the preparation method of quantum dot sensitized solar battery light anode as claimed in claim 2, is characterized in that: described chalcogenide quantum dot is sulphur/selenium/antimony telluride quantum dot.
4. the preparation method of quantum dot sensitized solar battery light anode as claimed in claim 1, it is characterized in that: the electron transport material of described quantum dot sensitized solar battery light anode and quantum dot sensitized material are present in titanium dioxide-chalcogenide quantum dot aggregate jointly, and this titanium dioxide-chalcogenide quantum dot aggregate be add from the described quantum dot oil phase mixed liquor mixed polarity hate solvent after co-precipitation out, formed particle diameter be 0.1-0.5 μm of spherical structure aggregate.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510998902.3A CN105489383B (en) | 2015-12-28 | 2015-12-28 | A kind of preparation method of quantum dot sensitized solar battery light anode |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510998902.3A CN105489383B (en) | 2015-12-28 | 2015-12-28 | A kind of preparation method of quantum dot sensitized solar battery light anode |
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| CN106129249A (en) * | 2016-06-28 | 2016-11-16 | 湖北大学 | A kind of perovskite quantum dot double absorption layer solaode and preparation method thereof |
| CN106486289A (en) * | 2016-12-12 | 2017-03-08 | 河北工业大学 | A kind of POSS modifies the preparation method of CdTe quantum sensitization solar battery |
| CN110878204A (en) * | 2019-12-05 | 2020-03-13 | 华东理工大学 | Aluminum/zinc-copper indium selenium quantum dot sensitizer and preparation method and application thereof |
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| CN106129249B (en) * | 2016-06-28 | 2019-01-01 | 湖北大学 | A kind of perovskite-quantum dot double absorption layer solar battery and preparation method thereof |
| CN106486289A (en) * | 2016-12-12 | 2017-03-08 | 河北工业大学 | A kind of POSS modifies the preparation method of CdTe quantum sensitization solar battery |
| CN110878204A (en) * | 2019-12-05 | 2020-03-13 | 华东理工大学 | Aluminum/zinc-copper indium selenium quantum dot sensitizer and preparation method and application thereof |
| CN110878204B (en) * | 2019-12-05 | 2022-09-16 | 华东理工大学 | Aluminum/zinc-copper indium selenium quantum dot sensitizer and preparation method and application thereof |
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