CN105489266A - Composition of lead-free conductive slurry for crystalline silicon solar cell and preparation method for lead-free conductive slurry - Google Patents
Composition of lead-free conductive slurry for crystalline silicon solar cell and preparation method for lead-free conductive slurry Download PDFInfo
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- CN105489266A CN105489266A CN201510945671.XA CN201510945671A CN105489266A CN 105489266 A CN105489266 A CN 105489266A CN 201510945671 A CN201510945671 A CN 201510945671A CN 105489266 A CN105489266 A CN 105489266A
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- 239000002002 slurry Substances 0.000 title claims abstract description 18
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 239000000203 mixture Substances 0.000 title claims abstract description 6
- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 55
- 229910052709 silver Inorganic materials 0.000 claims abstract description 25
- 239000004332 silver Substances 0.000 claims abstract description 25
- 239000011521 glass Substances 0.000 claims abstract description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 18
- 239000010703 silicon Substances 0.000 claims abstract description 18
- 239000000843 powder Substances 0.000 claims abstract description 13
- 229910052742 iron Inorganic materials 0.000 claims abstract description 8
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 8
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims abstract description 5
- 239000002184 metal Substances 0.000 claims abstract description 5
- 239000002994 raw material Substances 0.000 claims abstract description 5
- 239000013078 crystal Substances 0.000 claims description 15
- 238000013019 agitation Methods 0.000 claims description 9
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 claims description 5
- 239000001856 Ethyl cellulose Substances 0.000 claims description 5
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 claims description 5
- 229920001249 ethyl cellulose Polymers 0.000 claims description 5
- 235000019325 ethyl cellulose Nutrition 0.000 claims description 5
- RBNWAMSGVWEHFP-UHFFFAOYSA-N trans-p-Menthane-1,8-diol Chemical compound CC(C)(O)C1CCC(C)(O)CC1 RBNWAMSGVWEHFP-UHFFFAOYSA-N 0.000 claims description 5
- 238000002844 melting Methods 0.000 claims description 3
- 150000002739 metals Chemical class 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 3
- 238000003756 stirring Methods 0.000 claims description 2
- 239000000853 adhesive Substances 0.000 abstract description 9
- 230000001070 adhesive effect Effects 0.000 abstract description 9
- 238000005245 sintering Methods 0.000 abstract description 8
- 239000000463 material Substances 0.000 abstract description 6
- 238000005476 soldering Methods 0.000 abstract description 6
- 230000009257 reactivity Effects 0.000 abstract description 2
- 239000011230 binding agent Substances 0.000 abstract 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 239000006185 dispersion Substances 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 239000008240 homogeneous mixture Substances 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 2
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 2
- 239000005331 crown glasses (windows) Substances 0.000 description 2
- 238000003618 dip coating Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 230000001476 alcoholic effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 239000012456 homogeneous solution Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 239000005355 lead glass Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000011265 semifinished product Substances 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Sustainable Development (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Dispersion Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photovoltaic Devices (AREA)
- Conductive Materials (AREA)
Abstract
The invention relates to a composition of lead-free conductive slurry for a crystalline silicon solar cell and a preparation method for the lead-free conductive slurry. The slurry is prepared from the following raw materials in percentage by mass: 55-70% of silver powder, 1-15% of inorganic glass powder, 20-35% of organic binder and 0.5-1% of inorganic auxiliaries. According to the preparation method, SHBF-160 series glass is taken as an inorganic binding phase of the silver conductive slurry, so that high wettability and reactivity with a base material are obtained, and the sintering of the silver powder is facilitated; consequently, a back surface silver electrode is high in conductivity, weldability, soldering resistance, adhesive force and reliability, and the lead-free silver conductive slurry is realized; Ti, Zn, Fe, metal powder or other oxide powder are added to the silver conductive slurry, so that the contact resistance between the silver electrode and the silicon base material is reduced, and the ohmic contact between the sintered silver electrode and the base material is ensured under the premise of not affecting the weldability, soldering resistance, adhesive force and reliability of the sintered silver electrode.
Description
Technical field
The invention belongs to crystal silicon solar batteries plate field, particularly a kind of composition of unleaded electrocondution slurry of crystal silicon solar batteries and preparation method.
Background technology
Along with the consumption of non-renewable energy resources, the demand of the mankind to new cleaning fuel becomes more and more urgent.The representative of crystal silicon solar batteries novel energy just, it is battery solar energy being converted into electric energy.At present, in order to ensure optoelectronic transformation efficiency efficiently, usually the electrocondution slurry on monocrystalline silicon plate is done some and improve, require that silver electrode and base material will have good adhesive force; In production, the character of conductive silver slurry sintering rete depends on the glass dust as inorganic bond phase in conductive silver slurry when sintering condition is certain.But, containing plumbous this kind of metallics environment being had to pollution in this kind of glass dust, and the glass dust that conductive silver slurry is made needs lead to reach efficient electric energy, therefore need to find a kind of crown glass to substitute in the past have lead glass, and reach electrical property, adhesive force, the requirement of the aspects such as reliability.
Summary of the invention
The object of the present invention is to provide a kind of Lead free silver conducting paste of crystal silicon solar batteries, this conductive silver slurry is unleaded, through printing-sintering, can form good welding performance, the silver electrode of strong adhesion., efficiently solve the problems referred to above.
The present invention also provides the preparation method of the Lead free silver conducting paste of described crystal silicon solar batteries.
The technical scheme adopted to realize object of the present invention is: a kind of Lead free silver conducting paste of crystal silicon solar batteries, this slurry counts silver powder 55-70% by mass percent, the raw material composition of unorganic glass powder 1-15%, organic bond 20-35%, inorganic assistant 0.5-1%.
Preferably, described silver powder is ball shape silver powder, and its average grain diameter is 0.5-1.5 μm, specific area 1.0-1.5% ㎡/g, tap density 4.0-4.5g/ml.
Preferably, described unorganic glass powder is SHBF-160 system low-melting glass.
Preferably, described organic bond by mass percentage composed as follows: ethyl cellulose 10-20%, terpinol 20-55%, butyl carbitol 25-60%.
Preferably, the preparation method of described organic bond is as follows: by terpinol and butyl carbitol mixing, be heated to 60 DEG C-80 DEG C, add ethyl cellulose under stirring, constant temperature Keep agitation 1.5-2 hour, until become complete clear solution as organic bond.
Preferably, described inorganic assistant is from Ti, Zn, Fe tri-kinds of metals, and selects a kind of in the oxide powder of Ti, Zn, Fe, its average grain diameter≤0.5 μm.
A preparation method for the Lead free silver conducting paste of described crystal silicon solar batteries,
(1) according to above-mentioned pulp furnish, silver powder, organic bond, unorganic glass and inorganic assistant are put into de-airing mixer, Keep agitation more than 2 hours,
(2) raw material stirred is disperseed through three-high mill, grind to form homogeneous slurry, its scraper plate fineness≤10 μm, then be conductive silver slurry through 300 order silk screen filter.
The present invention has selected SHBF-160 system glass as the inorganic bond phase of conductive silver slurry, good wettability and reactivity is had with base material, and facilitate the sintering of silver powder, the back silver electrode obtained is made to have good conductivity, solderability, soldering resistance, adhesive force and reliability, achieve conductive silver slurry unleaded; By adding Ti in conductive silver slurry, Zn, Fe, metal powder or its oxide powder, burn till silver electrode solderability, soldering resistance not affecting, under the prerequisite of adhesive force and reliability, reduce the contact resistance of silver electrode and silicon substrate, ensure the ohmic contact of sintering silver electrode and base material.
Embodiment
Below by specific embodiment, technical scheme of the present invention is described in further detail.
Embodiment 1
Mass percent is counted 70 parts, silver powder, organic bond 2.5 parts, unorganic glass 27 parts and inorganic assistant 0.5 part of proportioning and put into de-airing mixer, Keep agitation 2 hours, form homogeneous mixture; Again through three-high mill dispersion, grind to form homogeneous slurry, scraper plate fineness≤10 μm, viscosity is 40-60pa.s, then obtains conductive silver slurry of the present invention through 225 order silk screen filter.
Embodiment 2
Mass percent is counted 60 parts, silver powder, organic bond 4.5 parts, unorganic glass 35 parts and inorganic assistant 0.5 part of proportioning and put into de-airing mixer, Keep agitation 2 hours, form homogeneous mixture; Again through three-high mill dispersion, grind to form homogeneous slurry, scraper plate fineness≤10 μm, viscosity is 40-60pa.s, then obtains conductive silver slurry of the present invention through 225 order silk screen filter.
Embodiment 3
Mass percent is counted 65 parts, silver powder, organic bond 46 parts, unorganic glass 328.5 parts and inorganic assistant 0.5 part of proportioning and put into de-airing mixer, Keep agitation 2 hours, form homogeneous mixture; Again through three-high mill dispersion, grind to form homogeneous slurry, scraper plate fineness≤10 μm, viscosity is 40-60pa.s, then obtains conductive silver slurry of the present invention through 225 order silk screen filter.
In three embodiments, silver powder is ball shape silver powder, and its average grain diameter is 0.5-1.5 μm, specific area 1.0-1.5% ㎡/g, tap density 4.0-4.5g/ml.It can be buied in market; Crown glass is SHBF-160 system low-melting glass, and it is the low glass that melts of environment-friendly type now; Inorganic assistant is from Ti, Zn, Fe tri-kinds of metals, and selects a kind of in the oxide powder of Ti, Zn, Fe, its average grain diameter≤0.5 μm.
The preparation of organic bond
Be terpinol 35 parts and butyl carbitol 60 parts of Homogeneous phase mixing by weight proportion, and be heated to 60-80 DEG C, under agitation add corresponding ethyl cellulose 5 parts, constant temperature Keep agitation 1-2 hour, obtain completely transparent, the homogeneous solution without insoluble matter is the organic bond of conductive silver slurry.
Solderability is tested: on silicon chip, print 1cmx1cm area, and after sintering, the rosin alcoholic solution of surface dip-coating 2%, as scaling powder, is dipped vertically in 220 DEG C of Sn62Pb36Ag2 tin pots 1-3 second, and area measuring and calculating 1c ㎡ soaking tin accounts for total area ratio.
Soldering resistance is tested: after burned 1cm2 solderability test pieces dip-coating alcohol rosin flux, immerse in 220 DEG C of Sn62Pb36Ag2 tin pots, and observation sintering silver layer is by the time of corroding completely.
Adhesive force is tested: conductive silver slurry be printed on the back side of semi-finished product crystal silicon solar batteries and burn till back silver electrode through standard manufacturing process, with standard tin-coated copper strip automatic welding, by puller system test 45° angle peeling force.
Fissility is tested: the solar battery sheet welding back electrode is put into moisture test case 85 DEG C of temperature, lower 3000 hours of 85% humidity, then test adhesive force and FF value (average).
Table specific as follows
| Solderability is tested | Soldering resistance is tested | Adhesive force is tested | Fissility is tested | |
| Embodiment 1 | ≥95％ | 7s | 6N | 4.2N |
| Embodiment 2 | ≥90％ | 5s | 4N | 2.2N |
| Embodiment 3 | ≥92％ | 6s | 6.2N | 4.0N |
These are only some embodiments of the present invention, to those skilled in the art, also can carry out some distortion and improvement without departing from the concept of the premise of the invention, these all belong to protection scope of the present invention.
Claims (7)
1. a Lead free silver conducting paste for crystal silicon solar batteries, this slurry counts silver powder 55-70% by mass percent, the raw material composition of unorganic glass powder 1-15%, organic bond 20-35%, inorganic assistant 0.5-1%.
2. the Lead free silver conducting paste of a kind of crystal silicon solar batteries according to claim 1, is characterized in that: described silver powder is ball shape silver powder, and its average grain diameter is 0.5-1.5 μm, specific area 1.0-1.5% ㎡/g, tap density 4.0-4.5g/ml.
3. the Lead free silver conducting paste of a kind of crystal silicon solar batteries according to claim 1, is characterized in that: described unorganic glass powder is SHBF-160 system low-melting glass.
4. the Lead free silver conducting paste of a kind of crystal silicon solar batteries according to claim 1, is characterized in that: described organic bond by mass percentage composed as follows: ethyl cellulose 10-20%, terpinol 20-55%, butyl carbitol 25-60%.
5. the Lead free silver conducting paste of a kind of crystal silicon solar batteries according to claim 1, is characterized in that: described inorganic assistant is from Ti, Zn, Fe tri-kinds of metals, and selects a kind of in the oxide powder of Ti, Zn, Fe, its average grain diameter≤0.5 μm.
6. the preparation method of an organic bond as claimed in claim 4:
(1) by terpinol and butyl carbitol mixing, 60 DEG C-80 DEG C are heated to;
(2) ethyl cellulose is added, constant temperature Keep agitation 1.5-2 hour, until become complete clear solution as organic bond under stirring.
7. a preparation method for the Lead free silver conducting paste of described crystal silicon solar batteries,
(1) according to above-mentioned pulp furnish, silver powder, organic bond, unorganic glass and inorganic assistant are put into de-airing mixer, Keep agitation more than 2 hours,
(2) raw material stirred is disperseed through three-high mill, grind to form homogeneous slurry, its scraper plate fineness≤10 μm, then be conductive silver slurry through 300 order silk screen filter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510945671.XA CN105489266A (en) | 2015-12-17 | 2015-12-17 | Composition of lead-free conductive slurry for crystalline silicon solar cell and preparation method for lead-free conductive slurry |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510945671.XA CN105489266A (en) | 2015-12-17 | 2015-12-17 | Composition of lead-free conductive slurry for crystalline silicon solar cell and preparation method for lead-free conductive slurry |
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| Publication Number | Publication Date |
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| CN105489266A true CN105489266A (en) | 2016-04-13 |
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| CN201510945671.XA Pending CN105489266A (en) | 2015-12-17 | 2015-12-17 | Composition of lead-free conductive slurry for crystalline silicon solar cell and preparation method for lead-free conductive slurry |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111341481A (en) * | 2020-03-06 | 2020-06-26 | 河北晶乐光电科技有限公司 | Back electrode paste and preparation method thereof |
| CN111354503A (en) * | 2018-12-24 | 2020-06-30 | 东泰高科装备科技有限公司 | Conductive silver paste for flexible thin-film solar cell module and preparation method thereof |
| CN116031015A (en) * | 2023-02-23 | 2023-04-28 | 华中科技大学 | Conductive paste, preparation method thereof and application thereof in high-temperature porous back electrode |
| CN117612765A (en) * | 2023-09-27 | 2024-02-27 | 淮安捷泰新能源科技有限公司 | Shallow surface layer precipitated high-performance silver paste and preparation method thereof |
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|---|---|---|---|---|
| CN102768871A (en) * | 2012-05-28 | 2012-11-07 | 杭州正银电子材料有限公司 | Composition of lead-free silver electrocondution slurry used for forming crystal silicon solar cell back electrode as well as preparation method thereof |
| JP2013118119A (en) * | 2011-12-05 | 2013-06-13 | Yamamoto Precious Metal Co Ltd | Conductive paste, and low-temperature-baked ceramic multilayer substrate with the same |
| CN103531265A (en) * | 2013-10-18 | 2014-01-22 | 南通天盛光伏科技有限公司 | Back field local contact aluminum slurry of crystalline silicon solar cell and preparation method of back field local contact aluminum slurry |
-
2015
- 2015-12-17 CN CN201510945671.XA patent/CN105489266A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013118119A (en) * | 2011-12-05 | 2013-06-13 | Yamamoto Precious Metal Co Ltd | Conductive paste, and low-temperature-baked ceramic multilayer substrate with the same |
| CN102768871A (en) * | 2012-05-28 | 2012-11-07 | 杭州正银电子材料有限公司 | Composition of lead-free silver electrocondution slurry used for forming crystal silicon solar cell back electrode as well as preparation method thereof |
| CN103531265A (en) * | 2013-10-18 | 2014-01-22 | 南通天盛光伏科技有限公司 | Back field local contact aluminum slurry of crystalline silicon solar cell and preparation method of back field local contact aluminum slurry |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111354503A (en) * | 2018-12-24 | 2020-06-30 | 东泰高科装备科技有限公司 | Conductive silver paste for flexible thin-film solar cell module and preparation method thereof |
| CN111341481A (en) * | 2020-03-06 | 2020-06-26 | 河北晶乐光电科技有限公司 | Back electrode paste and preparation method thereof |
| CN111341481B (en) * | 2020-03-06 | 2021-11-09 | 河北晶乐光电科技有限公司 | Back electrode paste and preparation method thereof |
| CN116031015A (en) * | 2023-02-23 | 2023-04-28 | 华中科技大学 | Conductive paste, preparation method thereof and application thereof in high-temperature porous back electrode |
| CN117612765A (en) * | 2023-09-27 | 2024-02-27 | 淮安捷泰新能源科技有限公司 | Shallow surface layer precipitated high-performance silver paste and preparation method thereof |
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