CN105470369A - Low power LED lamp in micro power grid structure and preparation method of graphene film of low power LED lamp - Google Patents
Low power LED lamp in micro power grid structure and preparation method of graphene film of low power LED lamp Download PDFInfo
- Publication number
- CN105470369A CN105470369A CN201510803880.0A CN201510803880A CN105470369A CN 105470369 A CN105470369 A CN 105470369A CN 201510803880 A CN201510803880 A CN 201510803880A CN 105470369 A CN105470369 A CN 105470369A
- Authority
- CN
- China
- Prior art keywords
- layer
- power led
- led lamp
- micro
- low
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Abstract
The invention discloses a low power LED lamp in a micro power grid structure and a preparation method of a graphene film of the low power LED lamp. The low power LED lamp comprises a heat radiation layer, a reflection layer, a driving block, a buffering chamber and an LED lamp beam layer, wherein the heat radiation layer is a conic structure, the conic-structure part of the heat radiation layer closely clings to the reflection layer, the upper end of the reflection layer is provided with the driving block, the driving block is level with the heat radiation layer, the outer side of the reflection layer is sequentially provided with the buffering chamber, the graphene film, the LED lamp bead layer and a light conduction layer, and an outer edge of the light conduction layer is connected with an outer edge of the driving block. According to the low power LED lamp, uniform conduction of the grapheme and the reflection effect of diffusion crystal grains are fully utilized, in combination with the light conduction layer of fluorescence beads, high illumination brightness is realized on the condition of smallest power.
Description
Technical field
The invention belongs to LED technology field, be specifically related to a kind of low-power LED of micro-capacitance sensor structure and the preparation method of graphene film thereof.
Background technology
LED(LightingEmittingDiode) namely illumination is LED lighting, is a kind of semiconducting solid luminescent device.It utilizes solid semiconductor chip as luminescent material, release superfluous energy by charge carrier generation compound in the semiconductors and cause photo emissions, directly send red, yellow, blue, green light, on this basis, utilize the principle of three primary colours, add fluorescent material, the light of the random color such as red, yellow, blue, green, blue or green, orange, purple, white can be sent.LED lamp utilizes LED as the produced ligthing paraphernalia of light source exactly.
In LED illumination lamp, end lamp, pendent lamp, the decoration such as projecting lamp use, the LED illumination lamp of reflection purposes can be competent in any occasion completely, comprises the Art Museum, the place that museum etc. are higher to face chromaticity requirements.But for market, the extensive facility such as office building, although be born as the LED lamp of throwing light on a large scale, its directive property (only straight line that LED chip sends, diversity is bad) too high, cause the illumination that in large area, design is average very difficult.Lamp tube type LED illumination lamp overmatter, design cost is too high, loses energy-saving effect.Therefore, present stage decorative use occasion, LED illumination lamp is completely available, and large area room lighting is also immature.
Along with the market of LED is constantly open, the use low-power of LED obtains most affirmative, along with the increase of use amount and the variation of result of use, the degree of regulation etc. of bright and dark light, the power of LED, light all encounters the bottleneck of design studies, only breaks a deadlock and just can have further method.By the general survey of Long-Time Service, the pursuit direction of current LED still have following some: 1, the power reduction of LED, the reduction of overall power could load more light fixtures; 2, the dance & art effect of LED; 3, the radiating effect of LED.
Summary of the invention
The object of this invention is to provide a kind of low-power LED of micro-capacitance sensor structure and the preparation method of graphene film thereof, the present invention makes full use of the homogeneous conductive of Graphene, and the combination between the reflecting effect of diffusion crystal grain and the optical waveguide layer of fluorescent bead can ensure to bring maximum brightness of illumination with minimum power.
A kind of low-power LED of micro-capacitance sensor structure, comprise heat dissipating layer 1, reflector layer 2, drive block 3, cushion chamber 4 and LED lamp bead layer 6, described heat dissipating layer 1 conically structure, described heat dissipating layer 1 conical section is glued with reflector layer 2, described reflector layer 2 upper end is provided with drive block 3, described drive block 3 flushes with heat dissipating layer 1 top, be disposed with cushion chamber 4, graphene film 6, LED lamp bead layer 7 and optical waveguide layer 5 outside described reflector layer 2, described optical waveguide layer 5 outward flange is connected with the outward flange of drive block 3.
Be provided with flourescent sheet 8 in described optical waveguide layer 5, described fluorescent bead 8 is spherical in shape, and particle diameter is not more than 1mm.
Described optical waveguide layer 5 adopts high Ya Like polymethyl methacrylate thoroughly, and described guide-lighting 5 thickness are not more than 5mm.
Described reflector layer 2 outer surface is provided with diffusion crystal grain 9, and described diffusion crystal grain 9 is not more than 1mm.
The thickness of described graphene film 6 is not more than 300 microns.
A kind of preparation method of graphene film of low-power LED of micro-capacitance sensor structure is as follows:
(1) preparation of graphene oxide colloidal sol: graphite oxide is ground to form the fine powder that particle diameter is 1-40 micron, and be mixed with solvent the suspension that concentration is 0.5-6mg/ml, ultrasonic process is after 10-120 minute, and the unstable impurity in removing suspension, obtains graphene oxide colloidal sol;
(2) without the preparation supporting graphene oxide film: graphene oxide colloidal sol prepared by step (1) is heated to 30-100 DEG C, through 10-200 minute, film is formed at colloidal sol liquid level, film is taken out from liquid level, and vacuumize at 50-150 DEG C of temperature, obtain without supporting graphene oxide film.
Described solvent adopts one or more of ethanol, acetone or water.
Unstable impurity in described removing suspension mode used is ion-exchange, filtration, free settling or centrifugation.
Compared with prior art, the present invention has following beneficial effect: LED provided by the invention adopts graphene film as conduction microgrid film, surface loads LED lamp bead, the electric conductivity that components utilising graphene film is good and low-resistivity, high radiating effect, power to LED, efficiency is even simultaneously; Adopt reflector layer to reflect with the light helped LED that is provided with of diffusion crystal grain, reach the effect making full use of light source, greatly reduce power demand; Adopt the optical waveguide layer with fluorescent bead, fully light can be broken up, prevent dazzling; Inside arranges heat dissipating layer, has good radiating effect, ensures the useful life of circuit material; The manufacture method of grapheme conductive film provided by the invention, simple and quick, effective, configuration is convenient, and raw material sources are extensive.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention;
Description of reference numerals:
1, heat dissipating layer; 2, reflector layer; 3, drive block; 4, cushion chamber; 5, optical waveguide layer; 6, graphene film; 7, LED lamp bead layer; 8, fluorescent bead; 9, crystal grain is spread.
Embodiment
Below in conjunction with embodiment, the present invention is described further:
Embodiment 1
A kind of low-power LED of micro-capacitance sensor structure, comprise heat dissipating layer 1, reflector layer 2, drive block 3, cushion chamber 4 and LED lamp bead layer 6, described heat dissipating layer 1 conically structure, described heat dissipating layer 1 conical section is glued with reflector layer 2, described reflector layer 2 upper end is provided with drive block 3, described drive block 3 flushes with heat dissipating layer 1 top, be disposed with cushion chamber 4, graphene film 6, LED lamp bead layer 7 and optical waveguide layer 5 outside described reflector layer 2, described optical waveguide layer 5 outward flange is connected with the outward flange of drive block 3.
Be provided with flourescent sheet 8 in described optical waveguide layer 5, described fluorescent bead 8 is spherical in shape, and particle diameter is not more than 1mm.
Described optical waveguide layer 5 adopts high Ya Like polymethyl methacrylate thoroughly, and described guide-lighting 5 thickness are not more than 5mm.
Described reflector layer 2 outer surface is provided with diffusion crystal grain 9, and described diffusion crystal grain 9 is not more than 1mm.
The thickness of described graphene film 6 is not more than 300 microns.
Embodiment 2
A kind of preparation method of graphene film of low-power LED of micro-capacitance sensor structure is as follows:
(1) preparation of graphene oxide colloidal sol: graphite oxide is ground to form the fine powder that particle diameter is 1-40 micron, and be mixed with solvent the suspension that concentration is 0.5-6mg/ml, ultrasonic process is after 10-120 minute, and the unstable impurity in removing suspension, obtains graphene oxide colloidal sol;
(2) without the preparation supporting graphene oxide film: graphene oxide colloidal sol prepared by step (1) is heated to 30-100 DEG C, through 10-200 minute, film is formed at colloidal sol liquid level, film is taken out from liquid level, and vacuumize at 50-150 DEG C of temperature, obtain without supporting graphene oxide film.
Described solvent adopts one or more of ethanol, acetone or water.
Unstable impurity in described removing suspension mode used is ion-exchange, filtration, free settling or centrifugation.
The foregoing is only one embodiment of the present of invention, do not limit the present invention, the technical scheme that the mode that all employings are equal to replacement or equivalent transformation obtains, all drop in protection scope of the present invention.
Claims (8)
1. the low-power LED of a micro-capacitance sensor structure, it is characterized in that, it comprises heat dissipating layer (1), reflector layer (2), drive block (3), cushion chamber (4) and LED lamp bead layer (6), described heat dissipating layer (1) conically structure, described heat dissipating layer (1) conical section is glued with reflector layer (2), described reflector layer (2) upper end is provided with drive block (3), described drive block (3) flushes with heat dissipating layer (1) top, described reflector layer (2) outside is disposed with cushion chamber (4), graphene film (6), LED lamp bead layer (7) and optical waveguide layer (5), described optical waveguide layer (5) outward flange is connected with the outward flange of drive block (3).
2. the low-power LED of a kind of micro-capacitance sensor structure according to claims 1, is characterized in that, is provided with flourescent sheet (8) in described optical waveguide layer (5), and described fluorescent bead (8) is spherical in shape, and particle diameter is not more than 1mm.
3. the low-power LED of a kind of micro-capacitance sensor structure according to claims 1, is characterized in that, described optical waveguide layer (5) adopts high Ya Like polymethyl methacrylate thoroughly, and described leaded light (5) thickness is not more than 5mm.
4. the low-power LED of a kind of micro-capacitance sensor structure according to claims 1, is characterized in that, described reflector layer (2) outer surface is provided with diffusion crystal grain (9), and described diffusion crystal grain (9) is not more than 1mm.
5. the low-power LED of a kind of micro-capacitance sensor structure according to claims 1, is characterized in that, the thickness of described graphene film (6) is not more than 300 microns.
6. the low-power LED of a kind of micro-capacitance sensor structure according to claims 1, it is characterized in that, the preparation method of described graphene film is as follows:
(1) preparation of graphene oxide colloidal sol: graphite oxide is ground to form the fine powder that particle diameter is 1-40 micron, and be mixed with solvent the suspension that concentration is 0.5-6mg/ml, ultrasonic process is after 10-120 minute, and the unstable impurity in removing suspension, obtains graphene oxide colloidal sol;
(2) without the preparation supporting graphene oxide film: graphene oxide colloidal sol prepared by step (1) is heated to 30-100 DEG C, through 10-200 minute, film is formed at colloidal sol liquid level, film is taken out from liquid level, and vacuumize at 50-150 DEG C of temperature, obtain without supporting graphene oxide film.
7. the low-power LED of a kind of micro-capacitance sensor structure according to claims 6, is characterized in that, described solvent adopts one or more of ethanol, acetone or water.
8. the low-power LED of a kind of micro-capacitance sensor structure according to claims 6, is characterized in that, the mode used of the unstable impurity in described removing suspension is ion-exchange, filtration, free settling or centrifugation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510803880.0A CN105470369B (en) | 2015-11-20 | 2015-11-20 | A kind of low-power LED of micro-capacitance sensor structure and its preparation method of graphene film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510803880.0A CN105470369B (en) | 2015-11-20 | 2015-11-20 | A kind of low-power LED of micro-capacitance sensor structure and its preparation method of graphene film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105470369A true CN105470369A (en) | 2016-04-06 |
| CN105470369B CN105470369B (en) | 2018-02-27 |
Family
ID=55607885
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510803880.0A Active CN105470369B (en) | 2015-11-20 | 2015-11-20 | A kind of low-power LED of micro-capacitance sensor structure and its preparation method of graphene film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105470369B (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100216270A1 (en) * | 2009-02-20 | 2010-08-26 | Cheng-Yi Liu | Method for manufacturing light emitting diode |
| CN102138230A (en) * | 2008-09-01 | 2011-07-27 | 欧司朗光电半导体有限公司 | Optoelectronic component |
| CN102694093A (en) * | 2012-06-19 | 2012-09-26 | 中国科学院半导体研究所 | Method for manufacturing micro-nano pyramid gallium nitride based light-emitting diode array with vertical structure |
| CN102903838A (en) * | 2012-07-10 | 2013-01-30 | 贵州大学 | Packaged LED light source with radiating structure and production method thereof |
| TW201445082A (en) * | 2013-05-29 | 2014-12-01 | Genesis Photonics Inc | Light emitting device |
| US20150263257A1 (en) * | 2013-05-27 | 2015-09-17 | Genesis Photonics Inc. | Light-emitting device |
-
2015
- 2015-11-20 CN CN201510803880.0A patent/CN105470369B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102138230A (en) * | 2008-09-01 | 2011-07-27 | 欧司朗光电半导体有限公司 | Optoelectronic component |
| US20100216270A1 (en) * | 2009-02-20 | 2010-08-26 | Cheng-Yi Liu | Method for manufacturing light emitting diode |
| CN102694093A (en) * | 2012-06-19 | 2012-09-26 | 中国科学院半导体研究所 | Method for manufacturing micro-nano pyramid gallium nitride based light-emitting diode array with vertical structure |
| CN102903838A (en) * | 2012-07-10 | 2013-01-30 | 贵州大学 | Packaged LED light source with radiating structure and production method thereof |
| US20150263257A1 (en) * | 2013-05-27 | 2015-09-17 | Genesis Photonics Inc. | Light-emitting device |
| TW201445082A (en) * | 2013-05-29 | 2014-12-01 | Genesis Photonics Inc | Light emitting device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105470369B (en) | 2018-02-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| WO2018205640A1 (en) | Lamp light source assembly, illumination assembly, and illumination lamp for road illumination | |
| US10920974B2 (en) | Intelligently-connected vehicle LED headlight using graphene | |
| CN202691731U (en) | Soften light emitting lamp (LED) lamp | |
| CN202501232U (en) | An LED lamp | |
| CN202074270U (en) | Light emitting diode (LED) lamp capable of emitting light within 360 degrees | |
| CN105470369A (en) | Low power LED lamp in micro power grid structure and preparation method of graphene film of low power LED lamp | |
| CN203176866U (en) | Novel remote fluorescent light-emitting diode (LED) bulb lamp | |
| CN201851969U (en) | Light emitting diode (LED) flat panel surface light source | |
| Rao et al. | Self-adaptive phosphor coating technology for white LED packaging | |
| CN104654079A (en) | High-performance 360-degree LED (Light-Emitting Diode) lamp | |
| CN202259432U (en) | Red LED lamp bead and indoor lamp adopting same | |
| CN202392549U (en) | LED spotlight | |
| CN203162616U (en) | Light emitting diode lamp source plate | |
| CN102661493A (en) | LED lamp capable of outputting light at large angle | |
| CN204853330U (en) | LED light source grading structure | |
| CN101482231B (en) | High-power LED tube light | |
| CN204300823U (en) | A kind of LEDbulb lamp | |
| CN204459825U (en) | High-performance 360 degree of light emitting LED lamp | |
| CN205383460U (en) | Cubic big chip LED filament assembly and cubic big chip LED filament bulb | |
| CN203549493U (en) | LED bulb lamp | |
| CN103574358A (en) | Lamp structure | |
| CN202834860U (en) | Long-distance fluorescent light-emitting diode (LED) candle lamp | |
| CN204300736U (en) | A kind of LED lamp | |
| CN102720956A (en) | Light emitting diode (LED) lamp based on fluorescent lamp cover | |
| CN201706232U (en) | LED lamp tube |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Address after: 528400, 13A, 01, 02, 10 and No. 09, A building, old town lighting building, Zhongxing Road, Zhongxing Town, Zhongshan, Guangdong Applicant after: Guangdong Tiansheng tech Limited by Share Ltd Address before: 528400, 13A, 01, 02, 10 and No. 09, A building, old town lighting building, Zhongxing Road, Zhongxing Town, Zhongshan, Guangdong Applicant before: ZHONGSHAN TIANSHENG CHANGHE MANAGEMENT TECHNICAL ADVISORY CO., LTD. |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant |