CN105470191A - Electrostatic clamping system and adsorption voltage control method of plasma processing device - Google Patents
Electrostatic clamping system and adsorption voltage control method of plasma processing device Download PDFInfo
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Abstract
Provided is an electrostatic clamping system of a plasma processing device. The electrostatic clamping system comprises a plasma processing cavity, an electrostatic chuck and an adsorption voltage supply system; the electrostatic chuck is mounted in the lower portion of the plasma processing cavity, a wafer is fixed on the electrostatic chuck, and the electrostatic chuck internally comprises at least one adsorptive electrode; the first reception end of the adsorption voltage supply system receives the setting value of the adsorption voltage, the second reception end of the adsorption voltage supply system receives the DC offset voltage value of the wafer in a plasma processing device, and the output end of the adsorption voltage supply system outputs the adsorption voltage to the adsorptive electrode; and the adsorption voltage supply system compares the received setting value of the adsorption voltage with the DC offset voltage value to obtain a corrective adsorption voltage value, and the amplitude and polarity of the output voltage output to the adsorptive electrode is adjusted according to the corrective adsorption voltage value.
Description
Technical field
The present invention relates to a kind of plasma treatment appts, particularly there is in a kind of plasma processing apparatus the electrostatic clamping systems of DC offset voltage compensate function, and clamping voltage control method.
Background technology
In recent years, along with the development of semiconductor fabrication process, to the integrated level of element and performance requirement more and more higher, plasma process is widely used in the manufacture of semiconductor device.First wafer pending in plasma treatment appts can be admitted to the electrostatic chuck upper surface in plasma treatment appts, and the Electrode connection in electrostatic chuck, to a high-voltage DC power supply, makes wafer be attracted on electrostatic chuck by this high tension voltage.Very high negative voltage is generally applied in the electrode of electrostatic chuck by prior art, realizes Electrostatic Absorption, and the outside negative voltage applied and the negative DC offset voltage superposition producing along with plasma and produce, finally can make the stable absorption of electrostatic chuck.But this method also has problems, such as adopt the damage (plasmainduceddamage) that negative voltage absorption easily causes plasma to cause to pending wafer, these damages can cause the chip shortening in useful life of machine-shaping on wafer, or impaired performance is even scrapped.In order to reduce these damages, can select to apply the electrode that positive electricity is pressed onto electrostatic chuck, so also can realize the absorption to wafer.Electrons a large amount of in plasma in plasma treatment process accumulates and forms negative voltage, namely DC offset voltage on wafer, and the size of DC offset voltage can be controlled by the power controlling rf bias power supply.But the DC offset voltage due to negative electrical charge accumulation formation on wafer is contrary with the polarity that outside applies positive polarity high direct voltage, both can cancel each other, and DC offset voltage can along be applied to plasma treatment appts radio-frequency power increase and increase, when DC offset voltage is increased to the high direct voltage being more than or equal to outside applying, the clamping voltage of reality can close to zero, and absorption affinity can significantly weaken.If outside given high direct voltage (HVsetting) set point is much larger than the DC offset voltage that may occur, the absorption to wafer can be ensured, but the burden that this can be very large to high direct voltage power supply circuits, not only device withstand voltage requires raising, power consumption also can increase, and plasma treatment complete rear need by wafer from electrostatic chuck depart from (Dechucking) time needs longer time applying high back voltage could reliably the charging neutrality on wafer be fallen, to raising wafer disengaging reliability and efficiency very unfavorable.In order to solve the impact of DC offset voltage on electrostatic chuck clamping voltage, need the numerical relation between the outside given high pressure (HVsetting) of a clamping voltage control system synthesis and DC offset voltage (Vdc), export suitable clamping voltage value, make wafer can by stable be adsorbed on electrostatic chuck reduces simultaneously the PID of wafer is damaged, further also to ensure plasma treatment complete after wafer can reliably depart from from electrostatic chuck fast.
Summary of the invention
Main purpose of the present invention is the defect overcoming prior art, the clamping voltage control system that a kind of multi-mode exports is provided, different clamping voltage can be exported according to the change of DC offset voltage, can ensure to also reduced significantly damage to device on wafer to the stable absorption of wafer, the flexibility simultaneously realized between different voltage output mode switches.
For reaching above-mentioned purpose, the electrostatic clamping systems in the invention provides, comprising: plasma processing chamber and the electrostatic chuck be installed on below in plasma processing chamber, and wafer is fixed on described electrostatic chuck, comprises at least one adsorption electrode in electrostatic chuck; A clamping voltage supply system, receiving clamping voltage set point, second receiving terminal for receiving the DC offset voltage value in plasma treatment appts on wafer by the first receiving terminal, also comprising an output and exporting clamping voltage to described adsorption electrode;
Described clamping voltage supply system relatively described in the clamping voltage set point that receives and DC offset voltage value obtain one and revise clamping voltage value, according to revising clamping voltage value regulation output to the amplitude of the output voltage of described adsorption electrode and polarity.Clamping voltage supply system can also comprise a comparator, and the clamping voltage set point received described in making and DC offset voltage value are added, and produces and export one to revise clamping voltage value.
Wherein can also comprise an output voltage switching device shifter and a trigger in clamping voltage supply system, trigger receives described correction clamping voltage value, export first mode switching signal and the second mode switching signal to described output voltage switching device shifter according to the comparative result that described correction clamping voltage value and first mode switch threshold values, the second pattern switches threshold values, described output voltage switching device shifter makes the polarity of described output voltage carry out positive and negative switching according to the first mode switching signal received or the second mode switching signal.Described clamping voltage supply system also comprises a power inverter, and power inverter comprises reception and produces the output voltage of corresponding amplitude according to described correction clamping voltage value, and described output voltage is connected to described output voltage switching device shifter.
Present invention also offers clamping voltage control method in a kind of plasma processing apparatus, described plasma treatment appts comprises a pedestal, the wafer being positioned at the electrostatic chuck on pedestal and being placed on electrostatic chuck, described clamping voltage control method comprises: pass into reacting gas, and applies to light plasma in rf electric field to plasma treatment appts; There is provided clamping voltage set point, first mode to switch threshold values, the second pattern switches threshold values; Detect and obtain the DC offset voltage value in plasma treatment appts on wafer; Process described clamping voltage set point and DC offset voltage value, obtain and revise clamping voltage value, produce clamping voltage according to described correction clamping voltage value; More described correction clamping voltage value and described first mode switch threshold values, the second pattern switches threshold values and selects the positive clamping voltage of output or negative clamping voltage to described electrostatic chuck.Wherein the first switching threshold values is greater than zero, and second switches threshold values is less than zero, revises when clamping voltage value is less than the second switching threshold values and exports negative clamping voltage to described electrostatic chuck; Described correction clamping voltage value exports positive clamping voltage to described electrostatic chuck when being greater than the first switching threshold values.Described first switches threshold values is less than or equal to 50V, equals the second switching threshold values and is more than or equal to-50V.
Wherein said clamping voltage set point is greater than 500V, and described DC offset voltage value is less than zero, to revise clamping voltage value be clamping voltage set point with DC offset voltage value with.
Wherein said correction clamping voltage value is less than the first switching threshold values when being greater than the second switching threshold values, exports clamping voltage absolute value and is less than 30V, to realize flexible transition during output mode conversion.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of plasma treatment appts of the present invention;
Fig. 2 be clamping voltage control system of the present invention accept the given high pressure in outside, DC offset voltage and output the oscillogram of clamping voltage.
Embodiment
For making content of the present invention clearly understandable, below in conjunction with Figure of description, content of the present invention is described further.Certain the present invention is not limited to this specific embodiment, and the general replacement known by those skilled in the art is also encompassed in protection scope of the present invention.
In describing the invention, it should be noted that, unless otherwise clearly defined and limited, term " is connected ", " electrical connection " should be interpreted broadly, such as, can be directly be connected, also indirectly can be connected by intermediary.For the ordinary skill in the art, concrete condition above-mentioned term concrete meaning in the present invention can be understood.
Fig. 1 shows the plasma treatment appts schematic diagram that an embodiment of the present invention provides.As shown in Figure 1, plasma treatment appts of the present invention comprises plasma reaction chamber 100, and the top of reaction chamber inside is a reacting gas injection device 11, is connected to source of the gas 110 by pipeline and valve.In reaction chamber 100, below comprises a pedestal 22, comprises an electrode and be connected with at least one radio-frequency power supply by conductor in pedestal.After reacting gas is passed into reaction chamber, lighted and maintain plasma by radio-frequency power supply, the negative electrical charge quantity that simultaneously also can be accumulated at crystal column surface by the size adjustment plasma of this radio-frequency power supply power output, thus regulation direct-current bias voltage (Vdc).Comprise an electrostatic chuck 21 above pedestal 22, in electrostatic chuck, comprise an electrode 210, electrostatic chuck is placed with pending wafer 20.Comprise well an edge ring 23 in plasma treatment appts to be centered around around wafer and electrostatic chuck 21 to regulate and control electric field and the Temperature Distribution of crystal round fringes.Plasma treatment appts of the present invention also comprises a clamping voltage control circuit, comprises an adder 30, power inverter 31, output voltage switching device shifter 32 and a trigger 33.Adder 30 is comprised at least two signal receiving ends 301 and 302 and receives the outside setting high-voltage value provided and the DC offset voltage (Vdc) obtained by DC offset voltage detection system respectively.Wherein DC offset voltage detection system can be the testing circuit being connected to electrode 210, this testing circuit is connected to electrode 210 by a radio-frequency resistance makes radio-frequency power decay, then rectification and integrating circuit by comprising diode and the components and parts such as inductance, electric capacity obtain the signal of telecommunication representing DC offset voltage amplitude, this signal of telecommunication of Mathematical treatment just can obtain the value of Vdc, and the value detecting Vdc is that known technology does not repeat them here in the industry.Setting high-voltage value 301 is can according to technological parameter during plasma treatment as temperature, power, wafer material structure optimization are selected, and the selection of this parameter is advisable can ensure wafer and reliably adsorbed and can not damage wafer.When describing clamping voltage control circuit operational detail of the present invention below further, setting high-voltage value 301 is for 700V, but actual the present invention can select wider scope as 500-3000V.
The DC offset voltage 302 that setting high-voltage value 301 and detection obtain is added and obtains the signal of telecommunication HVm that high-voltage value is revised in representative by adder of the present invention, and this correction high-voltage value represents the actual electrostatic attraction produced on wafer.Signal of telecommunication HVm outputs to the power inverter 31 at rear, and power inverter 31 produces corresponding high direct voltage according to this HVm signal and exports between output 311 and 312, and the voltage swing of this high direct voltage is for revising high-voltage value.The signal of telecommunication HVm that high-voltage value is revised in representative is also admitted to a trigger 33 simultaneously, and trigger exports a control signal to output voltage switching device shifter 32 according to this signal of telecommunication, controls the switching of internal switch.Output voltage switching device shifter 32 comprises at least two inputs and is connected respectively to 311 and 312, two inputs are connected to output 320 by a switching network, the output 311 of power inverter 31 is made optionally to be electrically connected to electrostatic chuck or ground connection by switching network, simultaneously output 312 optionally ground connection or be electrically connected to electrostatic chuck.Power inverter output voltage just can only be, and the magnitude of voltage exported is for revising high-voltage value, and the correction High voltage output that can realize plus or minus by output voltage switching device shifter of the present invention falls the electrode 210 of electrostatic chuck.
The course of work of trigger 33 of the present invention is described according to the voltage of Fig. 2 or waveform voltage signal figure below.Setting high-voltage value on figure middle port 301 is fixed on 700V all the time, and the DC bias value that port 302 detects changes in time and changes, and comprises at least at least 5 continuous print stages of A-E.
The direct current (DC) bias Vdc amplitude detected in the A stage increases gradually, is increased to-650V from 0, and process to obtain through adder 30 and revise high-voltage value 50V, output to power inverter 31, power inverter 31 exports 50V voltage.Describe the operation principle of trigger 33 below for Schmidt trigger, wherein trigger 33 exports the upper limit of conversion is 50V, and lower limit is-50V.Trigger 33 receives simultaneously revises high-voltage value 50V, and also do not arrive lower limit owing to revising high-voltage value 50V, so do not send switching signal to output voltage switching device shifter 32, output voltage switching device shifter 32 maintains positive voltage output state.The output voltage of final output 320 as shown in Figure 2, drops to 50V gradually from 700.
In B-stage, DC offset voltage drops to below-650V more than-750, now due to the restriction of power inverter 31 hardware, output voltage cannot normally export when 50V, so the output voltage of output 311 approximates zero, such as according to the difference that power inverter 31 designs, output voltage can be change also can directly close power inverter 31 between 30-0V, and making it output voltage is zero.Now because DC offset voltage amplitude is much larger than the output voltage amplitude of power inverter 31, so the active DC offset voltage to wafer adsorption.The correction high-voltage value that adder 30 exports simultaneously changes in 50V to-50V scope, and trigger 33 does not detect correction high-voltage value yet and exceedes conversion lower limit, so still maintain positive output state.Final output 311 is outputted to electrostatic chuck by as clamping voltage from port 320 close to the voltage of zero.Although the clamping voltage exported is zero, due to DC offset voltage very high (-700 ± 50V), so being only adsorbed onto on electrostatic chuck of wafer stabilizing just can be made by DC offset voltage.Because the output voltage of port 320 is zero so the electric current that switch in output voltage switching device shifter 32 flows through also is zero, follow-up be switched to other output state time, the device damage that hot-swap can be avoided to cause and the interference of electromagnetic field.
Below-750V (as-800V) is dropped in C stage direct current (DC) bias, revised high-voltage value-100V exceedes conversion lower limit-50V, power inverter 31 has also recovered the stable voltage of outside supply, simultaneously trigger 33 sends control command and makes the output voltage of output voltage switching device shifter 32 reverse as negative voltage, namely the output voltage of output 312 is connected to the electrode 210 of electrostatic chuck, and another output 311 is connected to earth terminal.The clamping voltage now exported by output 320 is-100V, DC auto-bias is-800V, both electrical potential differences are still 700V, this ensures that there the stability of electrostatic adsorption force, and direct belt current hot-swap is not had in from the A stage to C phase transition, centre comprises the B-stage that zero current flows through, and achieves flexible switching.
Rise to more than-750V again in D stage direct current (DC) bias, revise high-voltage value also below+50V more than-50V, power inverter 31 exports no-voltage again.But because the conversion upper limit+50V also not reaching trigger 33 is not so output voltage switching device shifter 32 still switches the negative voltage output mode residing for the C stage.
In the E stage, direct current (DC) bias rises to more than-650V, revises high-voltage value also more than+50V, and power inverter 31 recovers to export again revises high pressure.Revise high-voltage value and have also exceeded the conversion upper limit+50V, so trigger 33 controls output voltage switching device shifter 32 be transformed into positive voltage output mode, 320 export positive correction high pressure to electrostatic chuck.
In sum, the clamping voltage control system that multi-mode proposed by the invention exports can export different clamping voltage according to the change of DC offset voltage, can ensure to also reduced significantly damage to device on wafer to the stable absorption of wafer, the flexibility simultaneously realized between different voltage output mode switches.Conversion bound in the present invention also can be other numerical value as ± 30V or ± 20V, the concrete setting of bound numerical value is subject to the impact of power inverter 31 design parameter, as long as power inverter 31 still can ensure stable power stage, just select lower bound numerical value as far as possible.
Clamping voltage control system of the present invention, except being made up of adder, power inverter, trigger, output voltage switching device shifter as shown in Figure 1, also can be realized by other circuit structure, such as adder and trigger can be incorporated in same chip or circuit, also can be integrated into corresponding switch in power inverter, realize the output of opposed polarity voltage.For insider, select different circuit all can realize function of the present invention, so these circuit that can realize function of the present invention all belong to the scope of the invention.
Although the present invention discloses as above with preferred embodiment; right described many embodiments are citing for convenience of explanation only; and be not used to limit the present invention; those skilled in the art can do some changes and retouching without departing from the spirit and scope of the present invention, and the protection range that the present invention advocates should be as the criterion with described in claims.
Claims (9)
1. a clamping voltage control method in plasma processing apparatus, described plasma treatment appts comprises a pedestal, the wafer being positioned at the electrostatic chuck on pedestal and being placed on electrostatic chuck, and described clamping voltage control method comprises:
Pass into reacting gas, and apply to light plasma in rf electric field to plasma treatment appts;
There is provided clamping voltage set point, first mode to switch threshold values, the second pattern switches threshold values;
Detect and obtain the DC offset voltage value in plasma treatment appts on wafer;
Process described clamping voltage set point and DC offset voltage value, obtain and revise clamping voltage value, produce clamping voltage according to described correction clamping voltage value;
More described correction clamping voltage value and described first mode switch threshold values, the second pattern switches threshold values and selects the positive clamping voltage of output or negative clamping voltage to described electrostatic chuck.
2. clamping voltage control method according to claim 1, is characterized in that, described first switches threshold values is greater than zero, and second switches threshold values is less than zero,
Described correction clamping voltage value exports negative clamping voltage to described electrostatic chuck when being less than the second switching threshold values;
Described correction clamping voltage value exports positive clamping voltage to described electrostatic chuck when being greater than the first switching threshold values.
3. clamping voltage control method according to claim 1, is characterized in that, described clamping voltage set point is greater than 500V, and described DC offset voltage value is less than zero, to revise clamping voltage value be clamping voltage set point with DC offset voltage value with.
4. clamping voltage control method according to claim 2, is characterized in that, described first switches threshold values is less than or equal to 50V, equals the second switching threshold values and is more than or equal to-50V.
5. clamping voltage control method according to claim 4, is characterized in that, described correction clamping voltage value is less than the first switching threshold values when being greater than the second switching threshold values, exports clamping voltage and is less than 30V.
6. the electrostatic clamping systems in plasma treatment appts, comprising:
Plasma processing chamber and the electrostatic chuck be installed on below in plasma processing chamber, wafer is fixed on described electrostatic chuck, comprises at least one adsorption electrode in electrostatic chuck;
A clamping voltage supply system, receiving clamping voltage set point, second receiving terminal for receiving the DC offset voltage value in plasma treatment appts on wafer by the first receiving terminal, also comprising an output and exporting clamping voltage to described adsorption electrode;
Described clamping voltage supply system relatively described in the clamping voltage set point that receives and DC offset voltage value obtain one and revise clamping voltage value, according to revising clamping voltage value regulation output to the amplitude of the output voltage of described adsorption electrode and polarity.
7. electrostatic clamping systems according to claim 6, it is characterized in that, described clamping voltage supply system comprises an output voltage switching device shifter and a trigger, trigger receives described correction clamping voltage value, threshold values is switched according to described correction clamping voltage value and first mode, the comparative result output first mode switching signal of the second pattern switching threshold values and the second mode switching signal are to described output voltage switching device shifter, described output voltage switching device shifter makes the polarity of described output voltage carry out positive and negative switching according to the first mode switching signal received or the second mode switching signal.
8. electrostatic clamping systems according to claim 7, it is characterized in that, described clamping voltage supply system also comprises a power inverter, power inverter receives and produces the output voltage of corresponding amplitude according to described correction clamping voltage value, and described output voltage is connected to described output voltage switching device shifter.
9. electrostatic clamping systems according to claim 6, it is characterized in that, described clamping voltage supply system also comprises an adder, and the clamping voltage set point received described in making and DC offset voltage value are added, and produces and export one to revise clamping voltage value.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410461647.4A CN105470191B (en) | 2014-09-11 | 2014-09-11 | Electrostatic clamping systems and clamping voltage control method in a kind of plasma processing apparatus |
| TW103144912A TWI570833B (en) | 2014-09-11 | 2014-12-23 | Electrostatic clamping system in a plasma processing unit |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410461647.4A CN105470191B (en) | 2014-09-11 | 2014-09-11 | Electrostatic clamping systems and clamping voltage control method in a kind of plasma processing apparatus |
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| CN105470191A true CN105470191A (en) | 2016-04-06 |
| CN105470191B CN105470191B (en) | 2018-05-25 |
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Cited By (3)
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| CN110505742A (en) * | 2019-08-22 | 2019-11-26 | 上海华力微电子有限公司 | Crystal column surface charge eliminating device and method |
| CN113628958A (en) * | 2021-07-29 | 2021-11-09 | 华虹半导体(无锡)有限公司 | Method for manufacturing semiconductor device |
| CN114237337A (en) * | 2021-11-30 | 2022-03-25 | 西安北方华创微电子装备有限公司 | Semiconductor process equipment and voltage compensation method |
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- 2014-12-23 TW TW103144912A patent/TWI570833B/en active
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| CN110505742A (en) * | 2019-08-22 | 2019-11-26 | 上海华力微电子有限公司 | Crystal column surface charge eliminating device and method |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN105470191B (en) | 2018-05-25 |
| TWI570833B (en) | 2017-02-11 |
| TW201611177A (en) | 2016-03-16 |
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