CN105468108A - Method for modifying contact of DDR4 (DualDataRate) DIMM (Dual-lnline-Memory-Modules) and goldfinger - Google Patents
Method for modifying contact of DDR4 (DualDataRate) DIMM (Dual-lnline-Memory-Modules) and goldfinger Download PDFInfo
- Publication number
- CN105468108A CN105468108A CN201510899545.5A CN201510899545A CN105468108A CN 105468108 A CN105468108 A CN 105468108A CN 201510899545 A CN201510899545 A CN 201510899545A CN 105468108 A CN105468108 A CN 105468108A
- Authority
- CN
- China
- Prior art keywords
- dimm
- seal adhesive
- elevated
- adhesive tape
- temperature seal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
- G06F1/16—Constructional details or arrangements
- G06F1/18—Packaging or power distribution
- G06F1/183—Internal mounting support structures, e.g. for printed circuit boards, internal connecting means
- G06F1/186—Securing of expansion boards in correspondence to slots provided at the computer enclosure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
- H01R13/40—Securing contact members in or to a base or case; Insulating of contact members
- H01R13/405—Securing in non-demountable manner, e.g. moulding, riveting
Abstract
The invention discloses a method for modifying contact of DDR4DIMM and a goldfinger belonging to the technical field of computer memory modification. According to the method for modifying contact of the DDR4DIMM and the goldfinger, the openings at the tops of DIMM are sealed by high temperature sealing adhesive tapes; the sizes of the high temperature sealing adhesive tapes are in accord with the top sizes of the DIMM; the heat resistant capability of the high temperature sealing adhesive tapes is 260 degrees centigrade +/- 5s. The method for modifying the contact of the DDR4DIMM and the goldfinger of the invention in simple and convenient in operation; a shrapnel is effectively prevented from corrosion, or impurity is avoided; and the method has good popularization and application value.
Description
Technical field
The present invention relates to calculator memory technical field of improvement, a kind of method that DDR4DIMM of improvement contacts with golden finger is specifically provided.
Background technology
Traditional DIMM(Dual-lnline-Memory-Modules) dual inline memory module top is open packages; its part monomer transport and storage process in have external packing protect, but be welded to PCBA(PrintedCircuitBoardAssembly) process neutralization after PCBA transport preservation part will be completely exposed.This adds increased in DIMM the risk falling into foreign substance pollution or be corroded.DDR4(DualDataRate) DIMM(Dual-lnline-Memory-Modules) the shell fragment number ratio DDR3 that contacts with DDR4 golden finger of slot adds 40, and the length of overall DIMM groove is constant, therefore shell fragment density increases, and shell fragment width diminishes.In such a situa-tion, if shell fragment exists slight corrosion or impurity, dimm socket can be caused to grab less than memory bar, cause its use procedure to there is risk.
Summary of the invention
Technical assignment of the present invention is for above-mentioned Problems existing, provides a kind of simple to operation, can effectively avoid shell fragment to be corroded or method that the improvement DDR4DIMM that there is impurity contacts with golden finger.
For achieving the above object, the invention provides following technical scheme:
Improve the method that DDR4DIMM contacts with golden finger, changed into by DIMM top end opening and use the sealing of elevated-temperature seal adhesive tape, the size of described elevated-temperature seal adhesive tape is consistent with DIMM tip size, and the temperature capacity of elevated-temperature seal adhesive tape is 260 DEG C ± 5s.
With elevated-temperature seal adhesive tape sealing DIMM top, make DIMM can not be corroded and be subject to the pollution of impurity because of opening.The size of elevated-temperature seal adhesive tape is consistent with DIMM tip size well can protect DIMM, and being unlikely to again wastes material.The temperature capacity of elevated-temperature seal adhesive tape is 260 DEG C ± 5s, can meet the protection that DIMM in use can both be subject to elevated-temperature seal adhesive tape.
As preferably, described DIMM must not remove elevated-temperature seal adhesive tape before Kaifeng uses, and must not remove elevated-temperature seal adhesive tape in welding process, removes high-temperature seal adhesive band when PCBA assembles internal memory.In whole use procedure, all need not remove elevated-temperature seal adhesive tape, can DIMM be protected not corroded in each process, and not by the pollution of introduced contaminants.
As preferably, when described method can avoid shell fragment existing corrosion or impurity, dimm socket is caused to grab phenomenon less than memory bar.Due to before Kaifeng uses, in welding process and when PCBA assembles internal memory, all must not remove elevated-temperature seal adhesive tape, can be good at protection shell fragment and do not corroded, also can stop entering of introduced contaminants.
The present invention has following outstanding beneficial effect: DIMM top end opening changes into and uses the sealing of elevated-temperature seal adhesive tape by described method, can shell fragment be effectively avoided to be corroded, and can stop that impurity enters shell fragment, ensure that dimm socket can catch memory bar, ensure the stability used; And described method need not change original DIMM manufacture process, simple to operation, the elevated-temperature seal adhesive tape heat-resisting ability of use reaches 260 DEG C ± 5s, has good practicality.
Embodiment
Below in conjunction with embodiment, the method that improvement DDR4DIMM of the present invention contacts with golden finger is described in further detail.
Embodiment
The method that improvement DDR4DIMM of the present invention contacts with golden finger, changed into by DIMM top end opening and use the sealing of elevated-temperature seal adhesive tape, the size of elevated-temperature seal adhesive tape is consistent with DIMM tip size, and the temperature capacity of elevated-temperature seal adhesive tape is 260 DEG C ± 5s.DIMM must not remove elevated-temperature seal adhesive tape before Kaifeng uses, and must not remove elevated-temperature seal adhesive tape in welding process, removes high-temperature seal adhesive band when PCBA assembles internal memory.Due to before Kaifeng uses; all elevated-temperature seal adhesive tape must not be removed in welding process and when PCBA assembles internal memory; can be good at protection shell fragment not corroded; also entering of introduced contaminants can be stopped; when the method can avoid shell fragment existing corrosion or impurity; cause dimm socket to grab phenomenon less than memory bar, ensure that the stability of DDR4DIMM use procedure.
Above-described embodiment, just the present invention's more preferably embodiment, the usual change that those skilled in the art carries out within the scope of technical solution of the present invention and replacement all should be included in protection scope of the present invention.
Claims (3)
1. the method improved DDR4DIMM and contact with golden finger, it is characterized in that: DIMM top end opening is changed into and uses the sealing of elevated-temperature seal adhesive tape, the size of described elevated-temperature seal adhesive tape is consistent with DIMM tip size, and the temperature capacity of elevated-temperature seal adhesive tape is 260 DEG C ± 5s.
2. the method improved DDR4DIMM and contact with golden finger according to claim 1, it is characterized in that: described DIMM must not remove elevated-temperature seal adhesive tape before Kaifeng uses, elevated-temperature seal adhesive tape must not be removed in welding process, when PCBA assembles internal memory, remove high-temperature seal adhesive band.
3. the method that contact with golden finger of improvement DDR4DIMM according to claim 1 and 2, is characterized in that: described method existence on shell fragment can be avoided to corrode or impurity time, cause dimm socket to grab phenomenon less than memory bar.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510899545.5A CN105468108A (en) | 2015-12-09 | 2015-12-09 | Method for modifying contact of DDR4 (DualDataRate) DIMM (Dual-lnline-Memory-Modules) and goldfinger |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510899545.5A CN105468108A (en) | 2015-12-09 | 2015-12-09 | Method for modifying contact of DDR4 (DualDataRate) DIMM (Dual-lnline-Memory-Modules) and goldfinger |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105468108A true CN105468108A (en) | 2016-04-06 |
Family
ID=55605898
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510899545.5A Pending CN105468108A (en) | 2015-12-09 | 2015-12-09 | Method for modifying contact of DDR4 (DualDataRate) DIMM (Dual-lnline-Memory-Modules) and goldfinger |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105468108A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1350216A (en) * | 2000-10-19 | 2002-05-22 | 周先谱 | Computer main board design and processing method |
| CN101997194A (en) * | 2009-08-11 | 2011-03-30 | 冯林 | Memory protection device and computer |
-
2015
- 2015-12-09 CN CN201510899545.5A patent/CN105468108A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1350216A (en) * | 2000-10-19 | 2002-05-22 | 周先谱 | Computer main board design and processing method |
| CN101997194A (en) * | 2009-08-11 | 2011-03-30 | 冯林 | Memory protection device and computer |
| US20120268885A1 (en) * | 2009-08-11 | 2012-10-25 | Lin Feng | Memory Protection Device and Computer |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20160406 |
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| RJ01 | Rejection of invention patent application after publication |