CN105468108A - Method for improving contact between DDR4DIMM and golden finger - Google Patents

Method for improving contact between DDR4DIMM and golden finger Download PDF

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Publication number
CN105468108A
CN105468108A CN201510899545.5A CN201510899545A CN105468108A CN 105468108 A CN105468108 A CN 105468108A CN 201510899545 A CN201510899545 A CN 201510899545A CN 105468108 A CN105468108 A CN 105468108A
Authority
CN
China
Prior art keywords
dimm
adhesive tape
seal adhesive
elevated
temperature seal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201510899545.5A
Other languages
Chinese (zh)
Inventor
王晓澎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Inspur Electronic Information Industry Co Ltd
Original Assignee
Inspur Electronic Information Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Inspur Electronic Information Industry Co Ltd filed Critical Inspur Electronic Information Industry Co Ltd
Priority to CN201510899545.5A priority Critical patent/CN105468108A/en
Publication of CN105468108A publication Critical patent/CN105468108A/en
Pending legal-status Critical Current

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Classifications

    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/16Constructional details or arrangements
    • G06F1/18Packaging or power distribution
    • G06F1/183Internal mounting support structures, e.g. for printed circuit boards, internal connecting means
    • G06F1/186Securing of expansion boards in correspondence to slots provided at the computer enclosure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01RELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R13/00Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
    • H01R13/40Securing contact members in or to a base or case; Insulating of contact members
    • H01R13/405Securing in non-demountable manner, e.g. moulding, riveting

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • General Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Power Engineering (AREA)
  • Human Computer Interaction (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Gasket Seals (AREA)
  • Adhesive Tapes (AREA)

Abstract

The invention discloses an improved DDR 4? A method for contacting DIMM with golden finger belongs to the technical field of computer memory improvement. The modified DDR 4? The method for contacting the DIMM with the golden finger is characterized in that the opening at the top end of the DIMM is sealed by using a high-temperature sealing adhesive tape, the size of the high-temperature sealing adhesive tape is consistent with that of the top end of the DIMM, and the heat resistance of the high-temperature sealing adhesive tape is 260 +/-5 s. The improved DDR4 of the present invention? The method for contacting the DIMM with the golden finger is simple and convenient to operate, can effectively prevent the elastic sheet from being corroded or containing impurities, and has good popularization and application values.

Description

A kind of method that DDR4DIMM of improvement contacts with golden finger
Technical field
The present invention relates to calculator memory technical field of improvement, a kind of method that DDR4DIMM of improvement contacts with golden finger is specifically provided.
Background technology
Traditional DIMM(Dual-lnline-Memory-Modules) dual inline memory module top is open packages; its part monomer transport and storage process in have external packing protect, but be welded to PCBA(PrintedCircuitBoardAssembly) process neutralization after PCBA transport preservation part will be completely exposed.This adds increased in DIMM the risk falling into foreign substance pollution or be corroded.DDR4(DualDataRate) DIMM(Dual-lnline-Memory-Modules) the shell fragment number ratio DDR3 that contacts with DDR4 golden finger of slot adds 40, and the length of overall DIMM groove is constant, therefore shell fragment density increases, and shell fragment width diminishes.In such a situa-tion, if shell fragment exists slight corrosion or impurity, dimm socket can be caused to grab less than memory bar, cause its use procedure to there is risk.
Summary of the invention
Technical assignment of the present invention is for above-mentioned Problems existing, provides a kind of simple to operation, can effectively avoid shell fragment to be corroded or method that the improvement DDR4DIMM that there is impurity contacts with golden finger.
For achieving the above object, the invention provides following technical scheme:
Improve the method that DDR4DIMM contacts with golden finger, changed into by DIMM top end opening and use the sealing of elevated-temperature seal adhesive tape, the size of described elevated-temperature seal adhesive tape is consistent with DIMM tip size, and the temperature capacity of elevated-temperature seal adhesive tape is 260 DEG C ± 5s.
With elevated-temperature seal adhesive tape sealing DIMM top, make DIMM can not be corroded and be subject to the pollution of impurity because of opening.The size of elevated-temperature seal adhesive tape is consistent with DIMM tip size well can protect DIMM, and being unlikely to again wastes material.The temperature capacity of elevated-temperature seal adhesive tape is 260 DEG C ± 5s, can meet the protection that DIMM in use can both be subject to elevated-temperature seal adhesive tape.
As preferably, described DIMM must not remove elevated-temperature seal adhesive tape before Kaifeng uses, and must not remove elevated-temperature seal adhesive tape in welding process, removes high-temperature seal adhesive band when PCBA assembles internal memory.In whole use procedure, all need not remove elevated-temperature seal adhesive tape, can DIMM be protected not corroded in each process, and not by the pollution of introduced contaminants.
As preferably, when described method can avoid shell fragment existing corrosion or impurity, dimm socket is caused to grab phenomenon less than memory bar.Due to before Kaifeng uses, in welding process and when PCBA assembles internal memory, all must not remove elevated-temperature seal adhesive tape, can be good at protection shell fragment and do not corroded, also can stop entering of introduced contaminants.
The present invention has following outstanding beneficial effect: DIMM top end opening changes into and uses the sealing of elevated-temperature seal adhesive tape by described method, can shell fragment be effectively avoided to be corroded, and can stop that impurity enters shell fragment, ensure that dimm socket can catch memory bar, ensure the stability used; And described method need not change original DIMM manufacture process, simple to operation, the elevated-temperature seal adhesive tape heat-resisting ability of use reaches 260 DEG C ± 5s, has good practicality.
Embodiment
Below in conjunction with embodiment, the method that improvement DDR4DIMM of the present invention contacts with golden finger is described in further detail.
Embodiment
The method that improvement DDR4DIMM of the present invention contacts with golden finger, changed into by DIMM top end opening and use the sealing of elevated-temperature seal adhesive tape, the size of elevated-temperature seal adhesive tape is consistent with DIMM tip size, and the temperature capacity of elevated-temperature seal adhesive tape is 260 DEG C ± 5s.DIMM must not remove elevated-temperature seal adhesive tape before Kaifeng uses, and must not remove elevated-temperature seal adhesive tape in welding process, removes high-temperature seal adhesive band when PCBA assembles internal memory.Due to before Kaifeng uses; all elevated-temperature seal adhesive tape must not be removed in welding process and when PCBA assembles internal memory; can be good at protection shell fragment not corroded; also entering of introduced contaminants can be stopped; when the method can avoid shell fragment existing corrosion or impurity; cause dimm socket to grab phenomenon less than memory bar, ensure that the stability of DDR4DIMM use procedure.
Above-described embodiment, just the present invention's more preferably embodiment, the usual change that those skilled in the art carries out within the scope of technical solution of the present invention and replacement all should be included in protection scope of the present invention.

Claims (3)

1. the method improved DDR4DIMM and contact with golden finger, it is characterized in that: DIMM top end opening is changed into and uses the sealing of elevated-temperature seal adhesive tape, the size of described elevated-temperature seal adhesive tape is consistent with DIMM tip size, and the temperature capacity of elevated-temperature seal adhesive tape is 260 DEG C ± 5s.
2. the method improved DDR4DIMM and contact with golden finger according to claim 1, it is characterized in that: described DIMM must not remove elevated-temperature seal adhesive tape before Kaifeng uses, elevated-temperature seal adhesive tape must not be removed in welding process, when PCBA assembles internal memory, remove high-temperature seal adhesive band.
3. the method that contact with golden finger of improvement DDR4DIMM according to claim 1 and 2, is characterized in that: described method existence on shell fragment can be avoided to corrode or impurity time, cause dimm socket to grab phenomenon less than memory bar.
CN201510899545.5A 2015-12-09 2015-12-09 Method for improving contact between DDR4DIMM and golden finger Pending CN105468108A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201510899545.5A CN105468108A (en) 2015-12-09 2015-12-09 Method for improving contact between DDR4DIMM and golden finger

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201510899545.5A CN105468108A (en) 2015-12-09 2015-12-09 Method for improving contact between DDR4DIMM and golden finger

Publications (1)

Publication Number Publication Date
CN105468108A true CN105468108A (en) 2016-04-06

Family

ID=55605898

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201510899545.5A Pending CN105468108A (en) 2015-12-09 2015-12-09 Method for improving contact between DDR4DIMM and golden finger

Country Status (1)

Country Link
CN (1) CN105468108A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1350216A (en) * 2000-10-19 2002-05-22 周先谱 Computer main board design and processing method
CN101997194A (en) * 2009-08-11 2011-03-30 冯林 Memory protection device and computer

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1350216A (en) * 2000-10-19 2002-05-22 周先谱 Computer main board design and processing method
CN101997194A (en) * 2009-08-11 2011-03-30 冯林 Memory protection device and computer
US20120268885A1 (en) * 2009-08-11 2012-10-25 Lin Feng Memory Protection Device and Computer

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Application publication date: 20160406