CN105466973A - Safety guardrail with quick detection function - Google Patents
Safety guardrail with quick detection function Download PDFInfo
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- CN105466973A CN105466973A CN201610021358.1A CN201610021358A CN105466973A CN 105466973 A CN105466973 A CN 105466973A CN 201610021358 A CN201610021358 A CN 201610021358A CN 105466973 A CN105466973 A CN 105466973A
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- 238000001514 detection method Methods 0.000 title claims abstract description 28
- 239000007789 gas Substances 0.000 claims description 198
- 239000011521 glass Substances 0.000 claims description 79
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 77
- 239000000758 substrate Substances 0.000 claims description 67
- 229910021426 porous silicon Inorganic materials 0.000 claims description 62
- 229910052710 silicon Inorganic materials 0.000 claims description 61
- 239000010703 silicon Substances 0.000 claims description 61
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 59
- 206010070834 Sensitisation Diseases 0.000 claims description 58
- 230000008313 sensitization Effects 0.000 claims description 58
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 56
- 238000002360 preparation method Methods 0.000 claims description 50
- 238000000034 method Methods 0.000 claims description 36
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 32
- 238000009792 diffusion process Methods 0.000 claims description 30
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 29
- 239000002245 particle Substances 0.000 claims description 29
- 229910001220 stainless steel Inorganic materials 0.000 claims description 29
- 239000010935 stainless steel Substances 0.000 claims description 29
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 28
- 238000004140 cleaning Methods 0.000 claims description 28
- 239000008367 deionised water Substances 0.000 claims description 28
- 229910021641 deionized water Inorganic materials 0.000 claims description 28
- 230000004888 barrier function Effects 0.000 claims description 25
- 229910001930 tungsten oxide Inorganic materials 0.000 claims description 25
- 239000002041 carbon nanotube Substances 0.000 claims description 24
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 24
- 230000003197 catalytic effect Effects 0.000 claims description 24
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims description 24
- 239000000203 mixture Substances 0.000 claims description 22
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical group CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 claims description 21
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 21
- 230000007797 corrosion Effects 0.000 claims description 21
- 238000005260 corrosion Methods 0.000 claims description 21
- 235000019441 ethanol Nutrition 0.000 claims description 21
- 239000007788 liquid Substances 0.000 claims description 21
- 230000008569 process Effects 0.000 claims description 21
- 238000003756 stirring Methods 0.000 claims description 21
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 21
- 239000000843 powder Substances 0.000 claims description 16
- 239000000243 solution Substances 0.000 claims description 16
- 238000001704 evaporation Methods 0.000 claims description 15
- 230000008020 evaporation Effects 0.000 claims description 15
- 238000009434 installation Methods 0.000 claims description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 14
- 244000137852 Petrea volubilis Species 0.000 claims description 14
- 239000007767 bonding agent Substances 0.000 claims description 14
- 238000004891 communication Methods 0.000 claims description 14
- 238000001035 drying Methods 0.000 claims description 14
- 239000003792 electrolyte Substances 0.000 claims description 14
- 239000012530 fluid Substances 0.000 claims description 14
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 claims description 14
- HSZCZNFXUDYRKD-UHFFFAOYSA-M lithium iodide Chemical compound [Li+].[I-] HSZCZNFXUDYRKD-UHFFFAOYSA-M 0.000 claims description 14
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 14
- 239000002002 slurry Substances 0.000 claims description 14
- 239000008151 electrolyte solution Substances 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 239000002131 composite material Substances 0.000 claims description 8
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 7
- 230000004913 activation Effects 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 239000012298 atmosphere Substances 0.000 claims description 7
- FPCJKVGGYOAWIZ-UHFFFAOYSA-N butan-1-ol;titanium Chemical compound [Ti].CCCCO.CCCCO.CCCCO.CCCCO FPCJKVGGYOAWIZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052799 carbon Inorganic materials 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 238000001816 cooling Methods 0.000 claims description 7
- 238000005520 cutting process Methods 0.000 claims description 7
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Chemical compound CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 claims description 7
- 239000012153 distilled water Substances 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 7
- 238000000227 grinding Methods 0.000 claims description 7
- 239000012212 insulator Substances 0.000 claims description 7
- 239000012528 membrane Substances 0.000 claims description 7
- 239000011259 mixed solution Substances 0.000 claims description 7
- 239000004570 mortar (masonry) Substances 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 238000007747 plating Methods 0.000 claims description 7
- 238000005498 polishing Methods 0.000 claims description 7
- 229920006267 polyester film Polymers 0.000 claims description 7
- 229920000642 polymer Polymers 0.000 claims description 7
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 claims description 7
- 238000004080 punching Methods 0.000 claims description 7
- 150000003222 pyridines Chemical class 0.000 claims description 7
- 238000007789 sealing Methods 0.000 claims description 7
- 239000000741 silica gel Substances 0.000 claims description 7
- 229910002027 silica gel Inorganic materials 0.000 claims description 7
- 229960001866 silicon dioxide Drugs 0.000 claims description 7
- 239000002904 solvent Substances 0.000 claims description 7
- 238000004544 sputter deposition Methods 0.000 claims description 7
- 239000001117 sulphuric acid Substances 0.000 claims description 7
- 235000011149 sulphuric acid Nutrition 0.000 claims description 7
- 239000006228 supernatant Substances 0.000 claims description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 7
- 239000010937 tungsten Substances 0.000 claims description 7
- 229910052721 tungsten Inorganic materials 0.000 claims description 7
- 230000035945 sensitivity Effects 0.000 abstract description 21
- 230000000694 effects Effects 0.000 abstract description 5
- 238000012360 testing method Methods 0.000 description 31
- 230000008859 change Effects 0.000 description 11
- 230000009466 transformation Effects 0.000 description 11
- 230000004044 response Effects 0.000 description 10
- 230000007480 spreading Effects 0.000 description 6
- 238000003892 spreading Methods 0.000 description 6
- PDWBGRKARJFJGI-UHFFFAOYSA-N 2-phenylcyclohexa-2,4-dien-1-one Chemical compound O=C1CC=CC=C1C1=CC=CC=C1 PDWBGRKARJFJGI-UHFFFAOYSA-N 0.000 description 5
- 238000012422 test repetition Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000005281 excited state Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000003912 environmental pollution Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000021715 photosynthesis, light harvesting Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000004083 survival effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
-
- E—FIXED CONSTRUCTIONS
- E01—CONSTRUCTION OF ROADS, RAILWAYS, OR BRIDGES
- E01F—ADDITIONAL WORK, SUCH AS EQUIPPING ROADS OR THE CONSTRUCTION OF PLATFORMS, HELICOPTER LANDING STAGES, SIGNS, SNOW FENCES, OR THE LIKE
- E01F15/00—Safety arrangements for slowing, redirecting or stopping errant vehicles, e.g. guard posts or bollards; Arrangements for reducing damage to roadside structures due to vehicular impact
- E01F15/02—Continuous barriers extending along roads or between traffic lanes
-
- E—FIXED CONSTRUCTIONS
- E04—BUILDING
- E04H—BUILDINGS OR LIKE STRUCTURES FOR PARTICULAR PURPOSES; SWIMMING OR SPLASH BATHS OR POOLS; MASTS; FENCING; TENTS OR CANOPIES, IN GENERAL
- E04H17/00—Fencing, e.g. fences, enclosures, corrals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/042—Electrodes or formation of dielectric layers thereon characterised by the material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Photovoltaic Devices (AREA)
- Hybrid Cells (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Civil Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Electrochemistry (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
Abstract
The invention discloses a safety guardrail with the quick detection function. A detection device is installed on the outer surface of the safety guardrail. The detection device is based on a self-powered sensing component and further comprises a data reading module and a gas recognizing module. The self-powered component comprises a dye-sensitive solar cell module and a gas sensor module. The dye-sensitive solar cell module serves as a work power supply of the gas sensor module and has a self-powering effect. Harmful gas in the use environment of the safe guardrail can be quickly detected, sensitivity is good, the safe guardrail is convenient and quick to use, solar energy is used to the largest extent, and energy is saved.
Description
Technical field
The present invention relates to guardrail field, more specifically relate to a kind of safety barrier with quick measuring ability.
Background technology
Guardrail is mainly used in house, highway, to the protection of personal safety and installations and facilities and protection in the occasion such as shopping centre, public place.Guardrail is visible everywhere in our life.
In the environment for use of guardrail, inevitably have the appearance of leakproofness or dangerous gas, but existing guardrail do not possess gas detection function.
Summary of the invention
The object of the invention is to avoid weak point of the prior art and a kind of safety barrier with quick measuring ability is provided.
Object of the present invention is achieved through the following technical solutions:
Have a safety barrier for quick measuring ability, this safety barrier outer surface installation detecting device, described pick-up unit based on self energizing sensing element, and comprises data read module and gas identification module; This self energizing sensing element comprises dye sensitization solar cell module and gas sensor module; Dye sensitization of solar module, as the working power of gas sensor module, produces self-energizing effect, can realize the quick detection to harmful gas in safety barrier working environment, highly sensitive, convenient and swift, reaches the object of efficiency utilization sun power simultaneously.
Described dye sensitization solar cell module comprises electrode, light anode and is filled in described to the electrolytic solution between electrode and light anode, described comprised to electrode the stainless steel-based end, the conductive catalytic layer being close to the stainless steel-based end, the carbon nano-tube be arranged on described conductive catalytic layer, described smooth anode comprises the substrate of ITO electro-conductive glass and is positioned at the suprabasil TiO of ITO electro-conductive glass
2particle and dye molecules, described TiO
2the particle diameter of particle is about 40nm, and the described length to carbon nano-tube on electrode is 6 μm; Described gas sensor module comprises silicon chip substrate, tungsten oxide nano and Au electrode, on the surface of described silicon chip substrate, corrosion has Porous Silicon area, the surperficial evaporation of described Porous Silicon area has tungsten oxide layer film as the composite sensitive material detecting gas together with porous silicon, and the aperture of described porous silicon is 6 ~ 30nm; Described dye sensitization solar cell module and gas sensor module installation have a diameter to be the specification of the air admission hole of 0.5cm in surface be in the rectangular parallelepiped framework of the aluminum of 5cm × 5cm × 1cm, described dye sensitization solar cell module is bonded to the outside surface of described framework by bonding agent, and make light anode upward, described gas sensor module, data read module are arranged at described lower portion, and described dye sensitization solar cell module, described gas sensor module are connected by wire with data read module.
Preferably, the making of described dye sensitization solar cell module comprises the steps:
S1: prepared by electrode: the stainless steel-based end 1. selecting thickness to be the specification of 0.3mm to be 5cm × 5cm, use sand paper polishing, through acetone, ethanol, deionized water successively ultrasonic cleaning; 2. utilize magnetron sputtering method plating Cr film and Ni film on the stainless steel-based end to form conductive catalytic layer, the thickness of described Cr film is 300nm, and the thickness of described Ni film is 15nm; 3. CVD is utilized, CH
4for carbon source, Ni is catalyzer, carbon nano-tube;
S2: the preparation of light anode: 1. get absolute ethyl alcohol 50ml, ethylene glycol amine 2ml respectively, make it fully mix 50 DEG C of stirred in water bath, add butyl titanate 9ml in mixed solution, continue to stir 1h in a water bath, then add absolute ethyl alcohol 10ml, stir 1h in a water bath, leave standstill 12h, obtain TiO
2solution, is filtered, dry; 2. 5g step 1. middle dry TiO is got
2particle, 10ml ethanol, 2ml diacetone mix, and put into mortar grinding fully, obtained TiO
2slurry; 3. get step 2. in appropriate TiO
2slurry blade coating specification is after cleaning in the ITO electro-conductive glass substrate of 5cm × 5cm, processes 2h, is then immersed in 6h in the ethanolic solution of N719, obtain light anode at 110 DEG C;
S3: electrolyte quota: 0.5M lithium iodide, 0.06M iodine, the tertiary yl pyridines of 0.1M4-and 0.3M1-propyl group-3-methylimidazole salt compounded of iodine, solvent is acetonitrile and the propylene carbonate mixed liquor of volume ratio 1:1;
S4: assembling: will cover on light anode to electrode, form the cavity of 50 μm between the two, edge utilizes insulator to encapsulate, and injects the electrolyte in cavity, forms dye sensitization solar cell module;
The preparation of described gas sensor module comprises the following steps:
1. cutting silicon wafer substrate dimension is to 2cm × 2cm, puts into cleaning fluid ultrasonic cleaning 40min, 98% concentrated sulphuric acid and 40% hydrogen peroxide of cleaning fluid to be volume ratio be 3:1; Take out silicon chip substrate deionized water rinsing clean, then put into hydrofluorite and soak 10min, more successively with acetone, ethanol, deionized water ultrasonic cleaning 20min respectively;
2. adopt electrochemical process corrosion of silicon, preparation corrosive liquid, corrosive liquid is the hydrofluorite (40%) of volume ratio 1:3 and the mixed liquor of deionized water, and corrosion current is 45mA/cm
2, etching time is 1h, forms the Porous Silicon area of size 1.5cm × 1cm on silicon chip substrate surface;
3. silicon chip substrate is put into magnetic control sputtering device, at its porous silicon region field surface evaporation one deck tungsten film, thickness is 200nm, then silicon chip substrate is put into tubular furnace, passes into nitrogen under sealing normal pressure, utilizes CVD 450 DEG C to grow tungsten oxide nano;
4. use magnetron sputtering method on Porous Silicon area, make the Au electrode of two round point shapes, the diameter of described Au electrode is 1mm, and thickness is 100nm.
Described data read module is sent to the controller module being arranged at described pick-up unit inside by wireless communication module, described controller module is communicated with GPRS module by wireless communication module, and the data value detected by described pick-up unit is transferred to detection data basestation;
Further, described self energizing sensing element is also provided with a gas identification module, described gas identification module is connected with described data read module by wire, described gas identification module is formed primarily of shell body and the gas detect component that is connected with shell body detachable, and described gas detect component controls rete, instruction support powder and glass tube form by spreading; The preparation process of described gas detect component is as follows:
S1: the process of carrier and activation: the silica-gel carrier sieved (90 ~ 100 order) is placed in 600 DEG C of muffle furnaces and calcines 2h, after cooling, bottle stand-by;
S2: the preparation of instruction carrier: the original liquid of measured amounts puts into a container, pours a certain amount of activated carrier into, limit edged stirs, until mix, till supernatant liquor is less.In atmosphere after natural drying, load in closed container stand-by;
S3: the preparation of glass tube: select the glass tube (specification is ID2.0mm × OD4.0mm) that internal diameter is even, transparency is good, intercept into the glass tube some sections that length is 30mm, with sand paper by both sides hacking, then use suds, clear water, distilled water that glass tube cleaning is clean successively, dry stand-by;
S4: the preparation of diffusion controlling diaphragm: adopt the thick polyester film of 0.5mm as diffusion controlling diaphragm, after polymer PET drying, becomes external diameter to be the circular membrane of 2.0mm with mould punching;
S5: the assembling of gas identification module: side diffusion controlling diaphragm bonding agent being adhered to glass tube, then takes a certain amount of instruction support powder and slowly loads to glass tube tight in glass tube, smooth rear bonding opposite side diffusion controlling diaphragm.
Usefulness of the present invention is:
(1) the present invention is based on DSSC technology and gas sensor technology, design self-energizing gas sensor, namely the energy of working sensor is provided with DSSC; DSSC is connected with porous silicon-base gas sensor, comprises solar module, sensor assembly, data read module and gas detection module; Solar cell is used as the working power of sensor by solar electrical energy generation, produce self-energizing effect to gas sensor, and maximum using solar energy resources, decreases energy dissipation and environmental pollution.
(2) at DSSC in electrode, usually adopt Pt as to electrode catalyst agent material, but platinum is a kind of noble metal, expensive, the present invention adopts carbon nano-tube to substitute Pt as catalyzer, makes simple, catalytic efficiency is high, cheap; Preparation cost reduces greatly, is conducive to wideling popularize application; In addition, in the present invention, gas sensor module adopts porous silicon to be sensitive material, simultaneously at porous silicon surface evaporation tungsten oxide layer film, porous silica material and tungsten oxide material are combined as composite sensitive material, in the quick environment-identification of energy, the situation of change of gas, highly sensitive, convenient and swift.
(3) the present invention is provided with the gas identification module that can identify gas type after data read module, the instruction support powder used in the gas detect component arranged in this module judges gas type fast, its work does not need dye sensitization solar cell module to provide energy when running, overall province has saved the energy, and achieves passive detection emission gases; Efficient and convenient.
Accompanying drawing explanation
Utilize accompanying drawing to be described further invention, but the embodiment in accompanying drawing does not form any limitation of the invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to the following drawings.
Fig. 1 is safety barrier schematic diagram of the present invention.
Fig. 2 is the structural representation of dye sensitization solar cell module of the present invention.
Fig. 3 is gas sensor module schematic top plan view of the present invention.
Fig. 4 is the sectional view of gas sensor module of the present invention.
Fig. 5 be dye sensitization solar cell module of the present invention and gas sensor module in conjunction with schematic diagram.
Fig. 6 is the structural representation of gas identification module of the present invention.
Embodiment
In general, after the gas composition of sensitive element in gas sensor in extraneous test environment changes, its physical quantity measured accordingly also can change, the specific gas componant changed detects by gas sensor, and then transformed the change of the electric signal of reflection gas componant change, such as resistance, electric capacity, dielectric etc.
Porous silicon is a kind of material with open structure, and it can by monocrystalline silicon or polysilicon be oxidized in hydrofluorite obtains.Porous silicon has the advantage such as good optical property, huge surface area, and at present, porous silicon is to humidity, organic gas, NO
x, CO
x, O
2, HCl etc. shows detection.Take porous silicon as the gas sensor of sensitive material, after mainly utilizing its adsorbed gas, the change of conductivity is to detect gas.When porous silicon is placed in detected gas environment, gas can in porous silicon surface generation suction-operated, gas molecule can capture hole or electronics from porous silicon surface, cause the resistance of porous silicon to change, namely can be recorded the change of gas concentration to be measured by the change of measuring porous silicon resistance or conductance.
There is following technical matters in the gas sensor in current correlation technique: at gas sensor operationally, need external power supply or battery to drive its work, a large amount of use battery can cause environmental pollution and energy dissipation, to environment, there is potential harm, therefore, the new gas sensor seeking a kind of environmental protection and energy saving is needed.Sun power, as the continuable novel energy of one, is the basis of human survival and development.In future, solar electrical energy generation will become the main energy sources form of human society.At present, solar cell is mainly with silicon solar cell, DSSC and organic solar batteries form, wherein, the silicon solar cell of major part to be monocrystalline and polysilicon be representative on market, although it has, transformation efficiency is high, the advantage of stable performance, but when preparing silicon solar cell, refining high-purity silicon material needs the at substantial energy.
Under sunlight, dye molecule absorbs luminous energy, and it is excited to excited state by eigenstate, and due to the instability of excited state, its excited state electrons is transferred to from dye molecule the conductive layer that Nanometer Semiconductor Films passes through light anode, and then to external circuit; The dye molecule losing electronics can by I in the electrolytic solution that is close to
-revert to eigenstate, and I
-ion is oxidized to I
3-, electronics is transferred to electrode from external circuit, under the effect of catalyzer, by I in electrolytic solution
3-be reduced to I
-, so circulate.
Based on this, the principle of work of device of the present invention is: DSSC is connected with gas sensor, data read module.Under sunlight irradiates, in DSSC, dye molecule absorbs luminous energy, is excited, the electronics of release flows to external circuit through light anode, forms loop, to electrode by porous silicon-base gas sensor, data detection module, through the catalytic action of carbon nano-tube, go back I in original electrolyte
3-ion, so forms working cycle; For gas sensor, under detected gas environment, porous silicon and tungsten oxide meeting adsorption gas molecule, its conductivity is caused to change, and then act on the change of electric current, now data monitoring module can detect change, finally shows this gas concentration in real time.
The invention provides a kind of safety barrier with quick measuring ability, this safety barrier outer surface installation detecting device, described pick-up unit based on self energizing sensing element, and comprises data read module and gas identification module; This self energizing sensing element comprises dye sensitization solar cell module and gas sensor module; Dye sensitization of solar module, as the working power of gas sensor module, produces self-energizing effect, can realize the quick detection to harmful gas in safety barrier working environment, highly sensitive, convenient and swift, reaches the object of efficiency utilization sun power simultaneously.
In conjunction with legend the present invention made and further illustrating:
Fig. 1 is safety barrier schematic diagram of the present invention.Pick-up unit 2 is installed on the outer surface of safety barrier 1.
Fig. 2 is the structural representation of dye sensitization solar cell module of the present invention.
Fig. 3 is gas sensor module schematic top plan view of the present invention.
Fig. 4 is the sectional view of gas sensor module of the present invention.
Fig. 5 be dye sensitization solar cell module of the present invention and gas sensor module in conjunction with schematic diagram.
Fig. 6 is the structural representation of gas identification module of the present invention.
Wherein: the 10-stainless steel-based end, 11-silicon chip substrate, 12-silicon chip substrate, 13-dye sensitization solar cell module, 20-conductive catalytic layer, 21-Porous Silicon area, 23-gas sensor module, 30-electrolytic solution, 31-Au electrode, 32-tungsten oxide nano, 33-data read module, the substrate of 40-ITO electro-conductive glass, 43-framework, 50-to carbon nano-tube on electrode, 53-air admission hole, 60-TiO
2particle layer and dye molecules, 70-gas identification module, 71-shell body, 72-gas detect component, 73-diffusion controls rete, and 74-indicates support powder, 75-glass tube.
The invention will be further described with the following Examples.
Embodiment 1
A kind of safety barrier with quick measuring ability that embodiments of the invention provide, this safety barrier outer surface installation detecting device, described pick-up unit based on self energizing sensing element, and comprises data read module and gas identification module; This self energizing sensing element comprises dye sensitization solar cell module and gas sensor module; Described dye sensitization solar cell module comprises electrode, light anode and is filled in described to the electrolytic solution between electrode and light anode, described comprised to electrode the stainless steel-based end, the conductive catalytic layer being close to the stainless steel-based end, the carbon nano-tube be arranged on described conductive catalytic layer, described smooth anode comprises the substrate of ITO electro-conductive glass and is positioned at the suprabasil TiO of ITO electro-conductive glass
2particle and dye molecules, described TiO
2the particle diameter of particle is about 40nm; Described gas sensor module comprises silicon chip substrate, tungsten oxide nano and Au electrode, on the surface of described silicon chip substrate, corrosion has Porous Silicon area, and the surperficial evaporation of described Porous Silicon area has tungsten oxide layer film together with porous silicon as the composite sensitive material detecting gas; Described dye sensitization solar cell module and gas sensor module installation have a diameter to be the specification of the air admission hole of 0.5cm in surface be in the rectangular parallelepiped framework of the aluminum of 5cm × 5cm × 1cm, described dye sensitization solar cell module is bonded to the outside surface of described framework by bonding agent, and make light anode upward, described gas sensor module, data read module are arranged at described lower portion, and described dye sensitization solar cell module, described gas sensor module are connected by wire with data read module.
Preferably, the making of described dye sensitization solar cell module comprises the steps:
S1: prepared by electrode: the stainless steel-based end 1. selecting thickness to be the specification of 0.3mm to be 5cm × 5cm, use sand paper polishing, through acetone, ethanol, deionized water successively ultrasonic cleaning; 2. utilize magnetron sputtering method plating Cr film and Ni film on the stainless steel-based end to form conductive catalytic layer, the thickness of described Cr film is 500nm, and the thickness of described Ni film is 10nm; 3. CVD is utilized, CH
4for carbon source, Ni is catalyzer, carbon nano-tube;
S2: the preparation of light anode: 1. get absolute ethyl alcohol 50ml, ethylene glycol amine 2ml respectively, make it fully mix 50 DEG C of stirred in water bath, add butyl titanate 9ml in mixed solution, continue to stir 1h in a water bath, then add absolute ethyl alcohol 10ml, stir 1h in a water bath, leave standstill 12h, obtain TiO
2solution, is filtered, dry; 2. 5g step 1. middle dry TiO is got
2particle, 10ml ethanol, 2ml diacetone mix, and put into mortar grinding fully, obtained TiO
2slurry; 3. get step 2. in appropriate TiO
2slurry blade coating specification is after cleaning in the ITO electro-conductive glass substrate of 5cm × 5cm, processes 2h, is then immersed in 6h in the ethanolic solution of N719, obtain light anode at 110 DEG C;
S3: electrolyte quota: 0.5M lithium iodide, 0.06M iodine, the tertiary yl pyridines of 0.1M4-and 0.3M1-propyl group-3-methylimidazole salt compounded of iodine, solvent is acetonitrile and the propylene carbonate mixed liquor of volume ratio 1:1;
S4: assembling: will cover on light anode to electrode, form the cavity of 50 μm between the two, edge utilizes insulator to encapsulate, and injects the electrolyte in cavity, forms dye sensitization solar cell module;
The preparation of described gas sensor module comprises the following steps:
1. cutting silicon wafer substrate dimension is to 2cm × 2cm, puts into cleaning fluid ultrasonic cleaning 40min, 98% concentrated sulphuric acid and 40% hydrogen peroxide of cleaning fluid to be volume ratio be 3:1; Take out silicon chip substrate deionized water rinsing clean, then put into hydrofluorite and soak 10min, more successively with acetone, ethanol, deionized water ultrasonic cleaning 20min respectively;
2. adopt electrochemical process corrosion of silicon, preparation corrosive liquid, corrosive liquid is the hydrofluorite (40%) of volume ratio 1:3 and the mixed liquor of deionized water, and corrosion current is 45mA/cm
2, etching time is 1h, forms the Porous Silicon area of size 1.5cm × 1cm on silicon chip substrate surface;
3. silicon chip substrate is put into magnetic control sputtering device, at its porous silicon region field surface evaporation one deck tungsten film, thickness is 200nm, then silicon chip substrate is put into tubular furnace, passes into nitrogen under sealing normal pressure, utilizes CVD 450 DEG C to grow tungsten oxide nano;
4. use magnetron sputtering method on Porous Silicon area, make the Au electrode of two round point shapes, the diameter of described Au electrode is 1mm, and thickness is 100nm.
Described data read module is sent to the controller module being arranged at described pick-up unit inside by wireless communication module, described controller module is communicated with GPRS module by wireless communication module, and the data value detected by described pick-up unit is transferred to detection data basestation;
Further, described self energizing sensing element is also provided with a gas identification module, described gas identification module is connected with described data read module by wire, described gas identification module is formed primarily of shell body and the gas detect component that is connected with shell body detachable, and described gas detect component controls rete, instruction support powder and glass tube form by spreading; The preparation process of described gas detect component is as follows:
S1: the process of carrier and activation: the silica-gel carrier sieved (90 ~ 100 order) is placed in 600 DEG C of muffle furnaces and calcines 2h, after cooling, bottle stand-by;
S2: the preparation of instruction carrier: the original liquid of measured amounts puts into a container, pours a certain amount of activated carrier into, limit edged stirs, until mix, till supernatant liquor is less.In atmosphere after natural drying, load in closed container stand-by;
S3: the preparation of glass tube: select the glass tube (specification is ID2.0mm × OD4.0mm) that internal diameter is even, transparency is good, intercept into the glass tube some sections that length is 30mm, with sand paper by both sides hacking, then use suds, clear water, distilled water that glass tube cleaning is clean successively, dry stand-by;
S4: the preparation of diffusion controlling diaphragm: adopt the thick polyester film of 0.5mm as diffusion controlling diaphragm, after polymer PET drying, becomes external diameter to be the circular membrane of 2.0mm with mould punching;
S5: the assembling of gas identification module: side diffusion controlling diaphragm bonding agent being adhered to glass tube, then takes a certain amount of instruction support powder and slowly loads to glass tube tight in glass tube, smooth rear bonding opposite side diffusion controlling diaphragm.
Test data:
In obtained device, DSSC 6 μm are about to the length of carbon nano-tube on electrode, the aperture of porous silicon about 6 ~ 30nm in gas sensor; During test, this device is put into 1m
3light tight hermetical testing container, get 100mW/cm
2xenon source simulated solar irradiation, respectively to the NO passing into variable concentrations in test container
2gas.
The sensitivity of gas represents with following formula: R%=(I
0± I
t/ I
0) × 100%, in formula, when light source power is constant, I
0for not passing into NO
2time device in size of current, I
tfor passing into NO
2size of current during test gas in device.
Test obtains, the optimum transformation efficiency about 11.9% of DSSC, and find after test repetition 2000 times, DSSC transformation efficiency drops to 9.8%, reproducible; When gas sensor working temperature about 40 DEG C, it is all put up the best performance to the selectivity of gas and sensitivity, wherein, to NO
2the detection limit of gas is 4ppm, to the NO of 100ppm
2, sensitivity is 72, response time 5s; To NH
3the detection limit of gas is 5ppm, to the NH of 100ppm
3, sensitivity reaches 56, response time 4s.
Embodiment 2:
A kind of safety barrier with quick measuring ability that embodiments of the invention provide, this safety barrier outer surface installation detecting device, described pick-up unit based on self energizing sensing element, and comprises data read module and gas identification module; This self energizing sensing element comprises dye sensitization solar cell module and gas sensor module; Described dye sensitization solar cell module comprises electrode, light anode and is filled in described to the electrolytic solution between electrode and light anode, described comprised to electrode the stainless steel-based end, the conductive catalytic layer being close to the stainless steel-based end, the carbon nano-tube be arranged on described conductive catalytic layer, described smooth anode comprises the substrate of ITO electro-conductive glass and is positioned at the suprabasil TiO of ITO electro-conductive glass
2particle and dye molecules, described TiO
2the particle diameter of particle is about 35nm; Described gas sensor module comprises silicon chip substrate, tungsten oxide nano and Au electrode, on the surface of described silicon chip substrate, corrosion has Porous Silicon area, and the surperficial evaporation of described Porous Silicon area has tungsten oxide layer film together with porous silicon as the composite sensitive material detecting gas; Described dye sensitization solar cell module and gas sensor module installation have a diameter to be the specification of the air admission hole of 0.5cm in surface be in the rectangular parallelepiped framework of the aluminum of 5cm × 5cm × 1cm, described dye sensitization solar cell module is bonded to the outside surface of described framework by bonding agent, and make light anode upward, described gas sensor module, data read module are arranged at described lower portion, and described dye sensitization solar cell module, described gas sensor module are connected by wire with data read module.
Preferably, the making of described dye sensitization solar cell module comprises the steps:
S1: prepared by electrode: the stainless steel-based end 1. selecting thickness to be the specification of 0.3mm to be 5cm × 5cm, use sand paper polishing, through acetone, ethanol, deionized water successively ultrasonic cleaning; 2. utilize magnetron sputtering method plating Cr film and Ni film on the stainless steel-based end to form conductive catalytic layer, the thickness of described Cr film is 300nm, and the thickness of described Ni film is 15nm; 3. CVD is utilized, CH
4for carbon source, Ni is catalyzer, carbon nano-tube;
S2: the preparation of light anode: 1. get absolute ethyl alcohol 50ml, ethylene glycol amine 2ml respectively, make it fully mix 50 DEG C of stirred in water bath, add butyl titanate 9ml in mixed solution, continue to stir 1h in a water bath, then add absolute ethyl alcohol 10ml, stir 1h in a water bath, leave standstill 12h, obtain TiO
2solution, is filtered, dry; 2. 5g step 1. middle dry TiO is got
2particle, 10ml ethanol, 2ml diacetone mix, and put into mortar grinding fully, obtained TiO
2slurry; 3. get step 2. in appropriate TiO
2slurry blade coating specification is after cleaning in the ITO electro-conductive glass substrate of 5cm × 5cm, processes 2h, is then immersed in 6h in the ethanolic solution of N719, obtain light anode at 110 DEG C;
S3: electrolyte quota: 0.5M lithium iodide, 0.06M iodine, the tertiary yl pyridines of 0.1M4-and 0.3M1-propyl group-3-methylimidazole salt compounded of iodine, solvent is acetonitrile and the propylene carbonate mixed liquor of volume ratio 1:1;
S4: assembling: will cover on light anode to electrode, form the cavity of 50 μm between the two, edge utilizes insulator to encapsulate, and injects the electrolyte in cavity, forms dye sensitization solar cell module;
The preparation of described gas sensor module comprises the following steps:
1. cutting silicon wafer substrate dimension is to 2cm × 2cm, puts into cleaning fluid ultrasonic cleaning 40min, 98% concentrated sulphuric acid and 40% hydrogen peroxide of cleaning fluid to be volume ratio be 3:1; Take out silicon chip substrate deionized water rinsing clean, then put into hydrofluorite and soak 10min, more successively with acetone, ethanol, deionized water ultrasonic cleaning 20min respectively;
2. adopt electrochemical process corrosion of silicon, preparation corrosive liquid, corrosive liquid is the hydrofluorite (40%) of volume ratio 2:3 and the mixed liquor of deionized water, and corrosion current is 40mA/cm
2, etching time is 2h, forms the Porous Silicon area of size 1.5cm × 1cm on silicon chip substrate surface;
3. silicon chip substrate is put into magnetic control sputtering device, at its porous silicon region field surface evaporation one deck tungsten film, thickness is 200nm, then silicon chip substrate is put into tubular furnace, passes into nitrogen under sealing normal pressure, utilizes CVD 450 DEG C to grow tungsten oxide nano;
4. use magnetron sputtering method on Porous Silicon area, make the Au electrode of two round point shapes, the diameter of described Au electrode is 1mm, and thickness is 60nm.
Described data read module is sent to the controller module being arranged at described pick-up unit inside by wireless communication module, described controller module is communicated with GPRS module by wireless communication module, and the data value detected by described pick-up unit is transferred to detection data basestation;
Further, described self energizing sensing element is also provided with a gas identification module, described gas identification module is connected with described data read module by wire, described gas identification module is formed primarily of shell body and the gas detect component that is connected with shell body detachable, and described gas detect component controls rete, instruction support powder and glass tube form by spreading; The preparation process of described gas detect component is as follows:
S1: the process of carrier and activation: the silica-gel carrier sieved (90 ~ 100 order) is placed in 600 DEG C of muffle furnaces and calcines 2h, after cooling, bottle stand-by;
S2: the preparation of instruction carrier: the original liquid of measured amounts puts into a container, pours a certain amount of activated carrier into, limit edged stirs, until mix, till supernatant liquor is less.In atmosphere after natural drying, load in closed container stand-by;
S3: the preparation of glass tube: select the glass tube (specification is ID2.0mm × OD4.0mm) that internal diameter is even, transparency is good, intercept into the glass tube some sections that length is 30mm, with sand paper by both sides hacking, then use suds, clear water, distilled water that glass tube cleaning is clean successively, dry stand-by;
S4: the preparation of diffusion controlling diaphragm: adopt the thick polyester film of 0.5mm as diffusion controlling diaphragm, after polymer PET drying, becomes external diameter to be the circular membrane of 2.0mm with mould punching;
S5: the assembling of gas identification module: side diffusion controlling diaphragm bonding agent being adhered to glass tube, then takes a certain amount of instruction support powder and slowly loads to glass tube tight in glass tube, smooth rear bonding opposite side diffusion controlling diaphragm.
Test data:
In obtained device, DSSC 7 μm are about to the length of carbon nano-tube on electrode, the aperture of porous silicon about 5 ~ 20nm in gas sensor; During test, this device is put into 1m
3light tight hermetical testing container, get 100mW/cm
2xenon source simulated solar irradiation, respectively to the NO passing into variable concentrations in test container
2gas.
The sensitivity of gas represents with following formula: R%=(I
0± I
t/ I
0) × 100%, in formula, when light source power is constant, I
0for not passing into NO
2time device in size of current, I
tfor passing into NO
2size of current during test gas in device.
Test obtains, the optimum transformation efficiency about 10.2% of DSSC, and find after test repetition 2000 times, DSSC transformation efficiency drops to 8.1%, reproducible; When gas sensor working temperature about 40 DEG C, it is all put up the best performance to the selectivity of gas and sensitivity, wherein, to NO
2the detection limit of gas is 10ppm, to the NO of 100ppm
2, sensitivity is 72, response time 9s; To NH
3the detection limit of gas is 9ppm, to the NH of 100ppm
3, sensitivity reaches 50, response time 8s.
Embodiment 3
A kind of safety barrier with quick measuring ability that embodiments of the invention provide, this safety barrier outer surface installation detecting device, described pick-up unit based on self energizing sensing element, and comprises data read module and gas identification module; This self energizing sensing element comprises dye sensitization solar cell module and gas sensor module; Described dye sensitization solar cell module comprises electrode, light anode and is filled in described to the electrolytic solution between electrode and light anode, described comprised to electrode the stainless steel-based end, the conductive catalytic layer being close to the stainless steel-based end, the carbon nano-tube be arranged on described conductive catalytic layer, described smooth anode comprises the substrate of ITO electro-conductive glass and is positioned at the suprabasil TiO of ITO electro-conductive glass
2particle and dye molecules, described TiO
2the particle diameter of particle is about 45nm; Described gas sensor module comprises silicon chip substrate, tungsten oxide nano and Au electrode, on the surface of described silicon chip substrate, corrosion has Porous Silicon area, and the surperficial evaporation of described Porous Silicon area has tungsten oxide layer film together with porous silicon as the composite sensitive material detecting gas; Described dye sensitization solar cell module and gas sensor module installation have a diameter to be the specification of the air admission hole of 0.5cm in surface be in the rectangular parallelepiped framework of the aluminum of 5cm × 5cm × 1cm, described dye sensitization solar cell module is bonded to the outside surface of described framework by bonding agent, and make light anode upward, described gas sensor module, data read module are arranged at described lower portion, and described dye sensitization solar cell module, described gas sensor module are connected by wire with data read module.
Preferably, the making of described dye sensitization solar cell module comprises the steps:
S1: prepared by electrode: the stainless steel-based end 1. selecting thickness to be the specification of 0.3mm to be 5cm × 5cm, use sand paper polishing, through acetone, ethanol, deionized water successively ultrasonic cleaning; 2. utilize magnetron sputtering method plating Cr film and Ni film on the stainless steel-based end to form conductive catalytic layer, the thickness of described Cr film is 300nm, and the thickness of described Ni film is 15nm; 3. CVD is utilized, CH
4for carbon source, Ni is catalyzer, carbon nano-tube;
S2: the preparation of light anode: 1. get absolute ethyl alcohol 50ml, ethylene glycol amine 2ml respectively, make it fully mix 50 DEG C of stirred in water bath, add butyl titanate 9ml in mixed solution, continue to stir 1h in a water bath, then add absolute ethyl alcohol 10ml, stir 1h in a water bath, leave standstill 12h, obtain TiO
2solution, is filtered, dry; 2. 5g step 1. middle dry TiO is got
2particle, 10ml ethanol, 2ml diacetone mix, and put into mortar grinding fully, obtained TiO
2slurry; 3. get step 2. in appropriate TiO
2slurry blade coating specification is after cleaning in the ITO electro-conductive glass substrate of 5cm × 5cm, processes 2h, is then immersed in 6h in the ethanolic solution of N719, obtain light anode at 110 DEG C;
S3: electrolyte quota: 0.5M lithium iodide, 0.06M iodine, the tertiary yl pyridines of 0.1M4-and 0.3M1-propyl group-3-methylimidazole salt compounded of iodine, solvent is acetonitrile and the propylene carbonate mixed liquor of volume ratio 1:1;
S4: assembling: will cover on light anode to electrode, form the cavity of 50 μm between the two, edge utilizes insulator to encapsulate, and injects the electrolyte in cavity, forms dye sensitization solar cell module;
The preparation of described gas sensor module comprises the following steps:
1. cutting silicon wafer substrate dimension is to 2cm × 2cm, puts into cleaning fluid ultrasonic cleaning 40min, 98% concentrated sulphuric acid and 40% hydrogen peroxide of cleaning fluid to be volume ratio be 3:1; Take out silicon chip substrate deionized water rinsing clean, then put into hydrofluorite and soak 10min, more successively with acetone, ethanol, deionized water ultrasonic cleaning 20min respectively;
2. adopt electrochemical process corrosion of silicon, preparation corrosive liquid, corrosive liquid is the hydrofluorite (40%) of volume ratio 1:5 and the mixed liquor of deionized water, and corrosion current is 30mA/cm
2, etching time is 1h, forms the Porous Silicon area of size 1.5cm × 1cm on silicon chip substrate surface;
3. silicon chip substrate is put into magnetic control sputtering device, at its porous silicon region field surface evaporation one deck tungsten film, thickness is 200nm, then silicon chip substrate is put into tubular furnace, passes into nitrogen under sealing normal pressure, utilizes CVD 450 DEG C to grow tungsten oxide nano;
4. use magnetron sputtering method on Porous Silicon area, make the Au electrode of two round point shapes, the diameter of described Au electrode is 1mm, and thickness is 100nm.
Described data read module is sent to the controller module being arranged at described pick-up unit inside by wireless communication module, described controller module is communicated with GPRS module by wireless communication module, and the data value detected by described pick-up unit is transferred to detection data basestation;
Further, described self energizing sensing element is also provided with a gas identification module, described gas identification module is connected with described data read module by wire, described gas identification module is formed primarily of shell body and the gas detect component that is connected with shell body detachable, and described gas detect component controls rete, instruction support powder and glass tube form by spreading; The preparation process of described gas detect component is as follows:
S1: the process of carrier and activation: the silica-gel carrier sieved (90 ~ 100 order) is placed in 600 DEG C of muffle furnaces and calcines 2h, after cooling, bottle stand-by;
S2: the preparation of instruction carrier: the original liquid of measured amounts puts into a container, pours a certain amount of activated carrier into, limit edged stirs, until mix, till supernatant liquor is less.In atmosphere after natural drying, load in closed container stand-by;
S3: the preparation of glass tube: select the glass tube (specification is ID2.0mm × OD4.0mm) that internal diameter is even, transparency is good, intercept into the glass tube some sections that length is 30mm, with sand paper by both sides hacking, then use suds, clear water, distilled water that glass tube cleaning is clean successively, dry stand-by;
S4: the preparation of diffusion controlling diaphragm: adopt the thick polyester film of 0.5mm as diffusion controlling diaphragm, after polymer PET drying, becomes external diameter to be the circular membrane of 2.0mm with mould punching;
S5: the assembling of gas identification module: side diffusion controlling diaphragm bonding agent being adhered to glass tube, then takes a certain amount of instruction support powder and slowly loads to glass tube tight in glass tube, smooth rear bonding opposite side diffusion controlling diaphragm.
Test data:
In obtained device, DSSC 10 μm are about to the length of carbon nano-tube on electrode, the aperture of porous silicon about 5 ~ 50nm in gas sensor; During test, this device is put into 1m
3light tight hermetical testing container, get 100mW/cm
2xenon source simulated solar irradiation, respectively to the NO passing into variable concentrations in test container
2gas.
The sensitivity of gas represents with following formula: R%=(I
0± I
t/ I
0) × 100%, in formula, when light source power is constant, I
0for not passing into NO
2time device in size of current, I
tfor passing into NO
2size of current during test gas in device.
Test obtains, the optimum transformation efficiency about 10.9% of DSSC, and find after test repetition 2000 times, DSSC transformation efficiency drops to 8.7%, reproducible; When gas sensor working temperature about 40 DEG C, it is all put up the best performance to the selectivity of gas and sensitivity, wherein, to NO
2the detection limit of gas is 12ppm, to the NO of 100ppm
2, sensitivity is 51, response time 5s; To NH
3the detection limit of gas is 13ppm, to the NH of 100ppm
3, sensitivity reaches 9, response time 7s.
Embodiment 4
A kind of safety barrier with quick measuring ability that embodiments of the invention provide, this safety barrier outer surface installation detecting device, described pick-up unit based on self energizing sensing element, and comprises data read module and gas identification module; This self energizing sensing element comprises dye sensitization solar cell module and gas sensor module; Described dye sensitization solar cell module comprises electrode, light anode and is filled in described to the electrolytic solution between electrode and light anode, described comprised to electrode the stainless steel-based end, the conductive catalytic layer being close to the stainless steel-based end, the carbon nano-tube be arranged on described conductive catalytic layer, described smooth anode comprises the substrate of ITO electro-conductive glass and is positioned at the suprabasil TiO of ITO electro-conductive glass
2particle and dye molecules, described TiO
2the particle diameter of particle is about 80nm; Described gas sensor module comprises silicon chip substrate, tungsten oxide nano and Au electrode, on the surface of described silicon chip substrate, corrosion has Porous Silicon area, and the surperficial evaporation of described Porous Silicon area has tungsten oxide layer film together with porous silicon as the composite sensitive material detecting gas; Described dye sensitization solar cell module and gas sensor module installation have a diameter to be the specification of the air admission hole of 0.5cm in surface be in the rectangular parallelepiped framework of the aluminum of 5cm × 5cm × 1cm, described dye sensitization solar cell module is bonded to the outside surface of described framework by bonding agent, and make light anode upward, described gas sensor module, data read module are arranged at described lower portion, and described dye sensitization solar cell module, described gas sensor module are connected by wire with data read module.
Preferably, the making of described dye sensitization solar cell module comprises the steps:
S1: prepared by electrode: the stainless steel-based end 1. selecting thickness to be the specification of 0.3mm to be 5cm × 5cm, use sand paper polishing, through acetone, ethanol, deionized water successively ultrasonic cleaning; 2. utilize magnetron sputtering method plating Cr film and Ni film on the stainless steel-based end to form conductive catalytic layer, the thickness of described Cr film is 350nm, and the thickness of described Ni film is 15nm; 3. CVD is utilized, CH
4for carbon source, Ni is catalyzer, carbon nano-tube;
S2: the preparation of light anode: 1. get absolute ethyl alcohol 50ml, ethylene glycol amine 2ml respectively, make it fully mix 50 DEG C of stirred in water bath, add butyl titanate 9ml in mixed solution, continue to stir 1h in a water bath, then add absolute ethyl alcohol 10ml, stir 1h in a water bath, leave standstill 12h, obtain TiO
2solution, is filtered, dry; 2. 5g step 1. middle dry TiO is got
2particle, 10ml ethanol, 6ml diacetone mix, and put into mortar grinding fully, obtained TiO
2slurry; 3. get step 2. in appropriate TiO
2slurry blade coating specification is after cleaning in the ITO electro-conductive glass substrate of 5cm × 5cm, processes 2h, is then immersed in 6h in the ethanolic solution of N719, obtain light anode at 110 DEG C;
S3: electrolyte quota: 0.5M lithium iodide, 0.06M iodine, the tertiary yl pyridines of 0.1M4-and 0.3M1-propyl group-3-methylimidazole salt compounded of iodine, solvent is acetonitrile and the propylene carbonate mixed liquor of volume ratio 1:1;
S4: assembling: will cover on light anode to electrode, form the cavity of 50 μm between the two, edge utilizes insulator to encapsulate, and injects the electrolyte in cavity, forms dye sensitization solar cell module;
The preparation of described gas sensor module comprises the following steps:
1. cutting silicon wafer substrate dimension is to 2cm × 2cm, puts into cleaning fluid ultrasonic cleaning 40min, 98% concentrated sulphuric acid and 40% hydrogen peroxide of cleaning fluid to be volume ratio be 3:1; Take out silicon chip substrate deionized water rinsing clean, then put into hydrofluorite and soak 10min, more successively with acetone, ethanol, deionized water ultrasonic cleaning 20min respectively;
2. adopt electrochemical process corrosion of silicon, preparation corrosive liquid, corrosive liquid is the hydrofluorite (40%) of volume ratio 2:3 and the mixed liquor of deionized water, and corrosion current is 48mA/cm
2, etching time is 1h, forms the Porous Silicon area of size 1.5cm × 1cm on silicon chip substrate surface;
3. silicon chip substrate is put into magnetic control sputtering device, at its porous silicon region field surface evaporation one deck tungsten film, thickness is 200nm, then silicon chip substrate is put into tubular furnace, passes into nitrogen under sealing normal pressure, utilizes CVD 450 DEG C to grow tungsten oxide nano;
4. use magnetron sputtering method on Porous Silicon area, make the Au electrode of two round point shapes, the diameter of described Au electrode is 1mm, and thickness is 70nm.
Described data read module is sent to the controller module being arranged at described pick-up unit inside by wireless communication module, described controller module is communicated with GPRS module by wireless communication module, and the data value detected by described pick-up unit is transferred to detection data basestation;
Further, described self energizing sensing element is also provided with a gas identification module, described gas identification module is connected with described data read module by wire, described gas identification module is formed primarily of shell body and the gas detect component that is connected with shell body detachable, and described gas detect component controls rete, instruction support powder and glass tube form by spreading; The preparation process of described gas detect component is as follows:
S1: the process of carrier and activation: the silica-gel carrier sieved (90 ~ 100 order) is placed in 600 DEG C of muffle furnaces and calcines 2h, after cooling, bottle stand-by;
S2: the preparation of instruction carrier: the original liquid of measured amounts puts into a container, pours a certain amount of activated carrier into, limit edged stirs, until mix, till supernatant liquor is less.In atmosphere after natural drying, load in closed container stand-by;
S3: the preparation of glass tube: select the glass tube (specification is ID2.0mm × OD4.0mm) that internal diameter is even, transparency is good, intercept into the glass tube some sections that length is 30mm, with sand paper by both sides hacking, then use suds, clear water, distilled water that glass tube cleaning is clean successively, dry stand-by;
S4: the preparation of diffusion controlling diaphragm: adopt the thick polyester film of 0.5mm as diffusion controlling diaphragm, after polymer PET drying, becomes external diameter to be the circular membrane of 2.0mm with mould punching;
S5: the assembling of gas identification module: side diffusion controlling diaphragm bonding agent being adhered to glass tube, then takes a certain amount of instruction support powder and slowly loads to glass tube tight in glass tube, smooth rear bonding opposite side diffusion controlling diaphragm.
Test data:
In obtained device, DSSC 8 μm are about to the length of carbon nano-tube on electrode, the aperture of porous silicon about 20 ~ 40nm in gas sensor; During test, this device is put into 1m
3light tight hermetical testing container, get 100mW/cm
2xenon source simulated solar irradiation, respectively to the NO passing into variable concentrations in test container
2gas.
The sensitivity of gas represents with following formula: R%=(I
0± I
t/ I
0) × 100%, in formula, when light source power is constant, I
0for not passing into NO
2time device in size of current, I
tfor passing into NO
2size of current during test gas in device.
Test obtains, the optimum transformation efficiency about 8.7% of DSSC, and find after test repetition 2000 times, DSSC transformation efficiency drops to 7.4%, reproducible; When gas sensor working temperature about 40 DEG C, it is all put up the best performance to the selectivity of gas and sensitivity, wherein, to NO
2the detection limit of gas is 26ppm, to the NO of 100ppm
2, sensitivity is 39, response time 15s; To NH
3the detection limit of gas is 12ppm, to the NH of 100ppm
3, sensitivity reaches 37, response time 9s.
Embodiment 5
A kind of safety barrier with quick measuring ability that embodiments of the invention provide, this safety barrier outer surface installation detecting device, described pick-up unit based on self energizing sensing element, and comprises data read module and gas identification module; This self energizing sensing element comprises dye sensitization solar cell module and gas sensor module; Described dye sensitization solar cell module comprises electrode, light anode and is filled in described to the electrolytic solution between electrode and light anode, described comprised to electrode the stainless steel-based end, the conductive catalytic layer being close to the stainless steel-based end, the carbon nano-tube be arranged on described conductive catalytic layer, described smooth anode comprises the substrate of ITO electro-conductive glass and is positioned at the suprabasil TiO of ITO electro-conductive glass
2particle and dye molecules, described TiO
2the particle diameter of particle is about 100nm; Described gas sensor module comprises silicon chip substrate, tungsten oxide nano and Au electrode, on the surface of described silicon chip substrate, corrosion has Porous Silicon area, and the surperficial evaporation of described Porous Silicon area has tungsten oxide layer film together with porous silicon as the composite sensitive material detecting gas; Described dye sensitization solar cell module and gas sensor module installation have a diameter to be the specification of the air admission hole of 0.5cm in surface be in the rectangular parallelepiped framework of the aluminum of 5cm × 5cm × 1cm, described dye sensitization solar cell module is bonded to the outside surface of described framework by bonding agent, and make light anode upward, described gas sensor module, data read module are arranged at described lower portion, and described dye sensitization solar cell module, described gas sensor module are connected by wire with data read module.
Preferably, the making of described dye sensitization solar cell module comprises the steps:
S1: prepared by electrode: the stainless steel-based end 1. selecting thickness to be the specification of 0.3mm to be 5cm × 5cm, use sand paper polishing, through acetone, ethanol, deionized water successively ultrasonic cleaning; 2. utilize magnetron sputtering method plating Cr film and Ni film on the stainless steel-based end to form conductive catalytic layer, the thickness of described Cr film is 300nm, and the thickness of described Ni film is 15nm; 3. CVD is utilized, CH
4for carbon source, Ni is catalyzer, carbon nano-tube;
S2: the preparation of light anode: 1. get absolute ethyl alcohol 50ml, ethylene glycol amine 2ml respectively, make it fully mix 50 DEG C of stirred in water bath, add butyl titanate 9ml in mixed solution, continue to stir 1h in a water bath, then add absolute ethyl alcohol 10ml, stir 1h in a water bath, leave standstill 12h, obtain TiO
2solution, is filtered, dry; 2. 5g step 1. middle dry TiO is got
2particle, 10ml ethanol, 2ml diacetone mix, and put into mortar grinding fully, obtained TiO
2slurry; 3. get step 2. in appropriate TiO
2slurry blade coating specification is after cleaning in the ITO electro-conductive glass substrate of 5cm × 5cm, processes 2h, is then immersed in 6h in the ethanolic solution of N719, obtain light anode at 110 DEG C;
S3: electrolyte quota: 0.5M lithium iodide, 0.06M iodine, the tertiary yl pyridines of 0.1M4-and 0.3M1-propyl group-3-methylimidazole salt compounded of iodine, solvent is acetonitrile and the propylene carbonate mixed liquor of volume ratio 1:1;
S4: assembling: will cover on light anode to electrode, form the cavity of 50 μm between the two, edge utilizes insulator to encapsulate, and injects the electrolyte in cavity, forms dye sensitization solar cell module;
The preparation of described gas sensor module comprises the following steps:
1. cutting silicon wafer substrate dimension is to 2cm × 2cm, puts into cleaning fluid ultrasonic cleaning 40min, 98% concentrated sulphuric acid and 40% hydrogen peroxide of cleaning fluid to be volume ratio be 3:1; Take out silicon chip substrate deionized water rinsing clean, then put into hydrofluorite and soak 10min, more successively with acetone, ethanol, deionized water ultrasonic cleaning 20min respectively;
2. adopt electrochemical process corrosion of silicon, preparation corrosive liquid, corrosive liquid is the hydrofluorite (40%) of volume ratio 1:3 and the mixed liquor of deionized water, and corrosion current is 25mA/cm
2, etching time is 1h, forms the Porous Silicon area of size 1.5cm × 1cm on silicon chip substrate surface;
3. silicon chip substrate is put into magnetic control sputtering device, at its porous silicon region field surface evaporation one deck tungsten film, thickness is 200nm, then silicon chip substrate is put into tubular furnace, passes into nitrogen under sealing normal pressure, utilizes CVD 450 DEG C to grow tungsten oxide nano;
4. use magnetron sputtering method on Porous Silicon area, make the Au electrode of two round point shapes, the diameter of described Au electrode is 1mm, and thickness is 100nm.
Described data read module is sent to the controller module being arranged at described pick-up unit inside by wireless communication module, described controller module is communicated with GPRS module by wireless communication module, and the data value detected by described pick-up unit is transferred to detection data basestation;
Further, described self energizing sensing element is also provided with a gas identification module, described gas identification module is connected with described data read module by wire, described gas identification module is formed primarily of shell body and the gas detect component that is connected with shell body detachable, and described gas detect component controls rete, instruction support powder and glass tube form by spreading; The preparation process of described gas detect component is as follows:
S1: the process of carrier and activation: the silica-gel carrier sieved (90 ~ 100 order) is placed in 600 DEG C of muffle furnaces and calcines 2h, after cooling, bottle stand-by;
S2: the preparation of instruction carrier: the original liquid of measured amounts puts into a container, pours a certain amount of activated carrier into, limit edged stirs, until mix, till supernatant liquor is less.In atmosphere after natural drying, load in closed container stand-by;
S3: the preparation of glass tube: select the glass tube (specification is ID2.0mm × OD4.0mm) that internal diameter is even, transparency is good, intercept into the glass tube some sections that length is 30mm, with sand paper by both sides hacking, then use suds, clear water, distilled water that glass tube cleaning is clean successively, dry stand-by;
S4: the preparation of diffusion controlling diaphragm: adopt the thick polyester film of 0.5mm as diffusion controlling diaphragm, after polymer PET drying, becomes external diameter to be the circular membrane of 2.0mm with mould punching;
S5: the assembling of gas identification module: side diffusion controlling diaphragm bonding agent being adhered to glass tube, then takes a certain amount of instruction support powder and slowly loads to glass tube tight in glass tube, smooth rear bonding opposite side diffusion controlling diaphragm.
Test data:
In obtained device, DSSC 9 μm are about to the length of carbon nano-tube on electrode, the aperture of porous silicon about 30 ~ 70nm in gas sensor; During test, this device is put into 1m
3light tight hermetical testing container, get 100mW/cm
2xenon source simulated solar irradiation, respectively to the NO passing into variable concentrations in test container
2gas.
The sensitivity of gas represents with following formula: R%=(I
0± I
t/ I
0) × 100%, in formula, when light source power is constant, I
0for not passing into NO
2time device in size of current, I
tfor passing into NO
2size of current during test gas in device.
Test obtains, the optimum transformation efficiency about 11.7% of DSSC, and find after test repetition 2000 times, DSSC transformation efficiency drops to 9.7%, reproducible; When gas sensor working temperature about 40 DEG C, it is all put up the best performance to the selectivity of gas and sensitivity, wherein, to NO
2the detection limit of gas is 14ppm, to the NO of 100ppm
2, sensitivity is 67, response time 15s; To NH
3the detection limit of gas is 25ppm, to the NH of 100ppm
3, sensitivity reaches 36, response time 23s.
Finally should be noted that; above embodiment is only in order to illustrate technical scheme of the present invention; but not limiting the scope of the invention; although done to explain to the present invention with reference to preferred embodiment; those of ordinary skill in the art is to be understood that; can modify to technical scheme of the present invention or equivalent replacement, and not depart from essence and the scope of technical solution of the present invention.
Claims (2)
1. have a safety barrier for quick measuring ability, it is characterized in that: described safety barrier outer surface installation detecting device, this pick-up unit based on self energizing sensing element, and comprises data read module and gas identification module, this self energizing sensing element comprises dye sensitization solar cell module (13) and gas sensor module (23), described dye sensitization solar cell module (13) comprises electrode, light anode and is filled in described to the electrolytic solution (30) between electrode and light anode, described comprised to electrode the stainless steel-based end (10), the conductive catalytic layer (20) being close to the stainless steel-based end (10), the carbon nano-tube (50) be arranged on described conductive catalytic layer (20), the TiO that described smooth anode comprises ITO electro-conductive glass substrate (40) and is positioned in ITO electro-conductive glass substrate (40)
2particle and dye molecules (60), described TiO
2the particle diameter of particle is about 40nm, and the described length to carbon nano-tube on electrode (50) is 6 μm, described gas sensor module (23) comprises silicon chip substrate (11), tungsten oxide nano (32) and Au electrode (31), on the surface of described silicon chip substrate (11), corrosion has Porous Silicon area (21), the surperficial evaporation of described Porous Silicon area has tungsten oxide layer film as the composite sensitive material detecting gas together with porous silicon, and the aperture of described porous silicon is 6 ~ 30nm, described dye sensitization solar cell module (13) and gas sensor module (23) are arranged at surface, and to have a diameter to be the specification of the air admission hole (53) of 0.5cm be in the rectangular parallelepiped framework (43) of the aluminum of 5cm × 5cm × 1cm, described dye sensitization solar cell module (13) is bonded to the outside surface of described framework (53) by bonding agent, and make light anode upward, described gas sensor module (23), it is inner that data read module (33) is arranged at described framework (53), described dye sensitization solar cell module (13), described gas sensor module (23) is connected by wire with data read module (33).
2. safety barrier according to claim 1, is characterized in that,
The making of described dye sensitization solar cell module (13) comprises the steps:
S1: prepared by electrode: the stainless steel-based end (10) 1. selecting thickness to be the specification of 0.3mm to be 5cm × 5cm, use sand paper polishing, through acetone, ethanol, deionized water successively ultrasonic cleaning; 2. utilize magnetron sputtering method to form conductive catalytic layer (20) at the stainless steel-based end (10) upper plating Cr film and Ni film, the thickness of described Cr film is 300nm, and the thickness of described Ni film is 15nm; 3. CVD is utilized, CH
4for carbon source, Ni is catalyzer, carbon nano-tube;
S2: the preparation of light anode: 1. get absolute ethyl alcohol 50ml, ethylene glycol amine 2ml respectively, make it fully mix 50 DEG C of stirred in water bath, add butyl titanate 9ml in mixed solution, continue to stir 1h in a water bath, then add absolute ethyl alcohol 10ml, stir 1h in a water bath, leave standstill 12h, obtain TiO
2solution, is filtered, dry; 2. 5g step 1. middle dry TiO is got
2particle, 10ml ethanol, 2ml diacetone mix, and put into mortar grinding fully, obtained TiO
2slurry; 3. get step 2. in appropriate TiO
2slurry blade coating specification is after cleaning in the ITO electro-conductive glass substrate (40) of 5cm × 5cm, processes 2h, is then immersed in 6h in the ethanolic solution of N719, obtain light anode at 110 DEG C;
S3: electrolyte quota: 0.5M lithium iodide, 0.06M iodine, the tertiary yl pyridines of 0.1M4-and 0.3M1-propyl group-3-methylimidazole salt compounded of iodine, solvent is acetonitrile and the propylene carbonate mixed liquor of volume ratio 1:1;
S4: assembling: will cover on light anode to electrode, form the cavity of 50 μm between the two, edge utilizes insulator to encapsulate, and is injected in cavity by electrolytic solution (30), forms dye sensitization solar cell module (13);
The preparation of described gas sensor module (23) comprises the following steps:
1. cutting silicon wafer substrate (11) size is to 2cm × 2cm, puts into cleaning fluid ultrasonic cleaning 40min, 98% concentrated sulphuric acid and 40% hydrogen peroxide of cleaning fluid to be volume ratio be 3:1; Take out silicon chip substrate (11) deionized water rinsing clean, then put into hydrofluorite and soak 10min, more successively with acetone, ethanol, deionized water ultrasonic cleaning 20min respectively;
2. adopt electrochemical process corrosion of silicon, preparation corrosive liquid, corrosive liquid is the hydrofluorite (40%) of volume ratio 1:3 and the mixed liquor of deionized water, and corrosion current is 45mA/cm
2, etching time is 1h, forms the Porous Silicon area (21) of size 1.5cm × 1cm on silicon chip substrate (11) surface;
3. silicon chip substrate (11) is put into magnetic control sputtering device, at its Porous Silicon area (21) surperficial evaporation one deck tungsten film, thickness is 200nm, then silicon chip substrate (11) is put into tubular furnace, pass into nitrogen under sealing normal pressure, utilize CVD 450 DEG C to grow tungsten oxide nano;
4. use magnetron sputtering method at the Au electrode (31) of Porous Silicon area (21) upper making two round point shapes, the diameter of described Au electrode (31) is 1mm, and thickness is 100nm.
Described data read module (33) is sent to the controller module being arranged at described pick-up unit inside by wireless communication module, described controller module is communicated with GPRS module by wireless communication module, and the data value detected by described pick-up unit is transferred to detection data basestation;
Further, described self energizing sensing element is also provided with a gas identification module (70), described gas identification module (70) is connected with described data read module (33) by wire, described gas identification module (70) is formed primarily of shell body (71) and the gas detect component (72) that is connected with shell body (71) detachable, and described gas detect component (72) controls rete (73), instruction support powder (74) and glass tube (75) by diffusion and forms; The preparation process of described gas detect component (72) is as follows:
S1: the process of carrier and activation: the silica-gel carrier sieved (90 ~ 100 order) is placed in 600 DEG C of muffle furnaces and calcines 2h, after cooling, bottle stand-by;
S2: the preparation of instruction carrier: the original liquid of measured amounts puts into a container, pours a certain amount of activated carrier into, limit edged stirs, until mix, till supernatant liquor is less.In atmosphere after natural drying, load in closed container stand-by;
S3: the preparation of glass tube: select the glass tube (specification is ID2.0mm × OD4.0mm) that internal diameter is even, transparency is good, intercept into the glass tube some sections that length is 30mm, with sand paper by both sides hacking, then use suds, clear water, distilled water that glass tube cleaning is clean successively, dry stand-by;
S4: the preparation of diffusion controlling diaphragm: adopt the thick polyester film of 0.5mm as diffusion controlling diaphragm, after polymer PET drying, becomes external diameter to be the circular membrane of 2.0mm with mould punching;
S5: the assembling of gas identification module: side diffusion controlling diaphragm bonding agent being adhered to glass tube, then takes a certain amount of instruction support powder and slowly loads to glass tube tight in glass tube, smooth rear bonding opposite side diffusion controlling diaphragm.
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