CN105466610B - A kind of pressure sensor and electronic device - Google Patents
A kind of pressure sensor and electronic device Download PDFInfo
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- CN105466610B CN105466610B CN201410452315.XA CN201410452315A CN105466610B CN 105466610 B CN105466610 B CN 105466610B CN 201410452315 A CN201410452315 A CN 201410452315A CN 105466610 B CN105466610 B CN 105466610B
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Abstract
The present invention relates to a kind of pressure sensor and electronic device, including pressure sensitive unit, the pressure sensitive unit includes several spaced linear openings, to expose pressure sensing membrane；Wherein, several linear opening arrays circlewise structure, to form pressure sensing area.The present invention is in order to solve the problems in the existing technology, provide a kind of new pressure sensor, the pressure sensor includes pressure sensitive unit and pressure reference unit, wherein pressure sensing area described in the pressure sensitive unit is improved to the cyclic structure formed by several spaced linear openings by conventional rectangle, the linear opening has smaller critical size, there is no pressure sensor cavities in the pressure reference unit simultaneously, the position of the pressure sensor cavities is filled with encapsulant layer, it can be further improved the sensitivity of pressure sensor by above-mentioned improvement, accuracy and stability.
Description
Technical field
The present invention relates to semiconductor fields, in particular it relates to a kind of pressure sensor and electronic device.
Background technique
With the continuous development of semiconductor technology, sensor (motion sensor) class product in the market, intelligent hand
Machine, integrated CMOS and microelectromechanical systems (MEMS) device have become most mainstream, state-of-the-art technology, and with technology
Update, the developing direction of this kind of product sensor is smaller size, the electric property of high quality and lower loss.
Microelectromechanical systems (MEMS) volume, power consumption, weight and in price have fairly obvious advantage, until
The present has developed a variety of different sensors, such as pressure sensor, acceleration transducer, inertial sensor and others
Sensor.
Wherein, there is also some problems while being used widely for pressure sensor, exist in the pressure sensor
During sensing pressure, when pressure is smaller, the response between the power that coating is subject to and detection pressure has good line
Sexual intercourse, but becoming larger with pressure, pressure response become not reproducible, and the power that coating is subject to is not as pressure is big
Increase it is constant become larger, pressure response does not have good linear relationship, as illustrated in figure 1 c, to affect the spirit of pressure sensor
Sensitivity and accuracy.
Therefore, it is necessary to be improved further to pressure sensor, to eliminate the above problem, pressure biography is further increased
The sensitivity and accuracy of sensor.
Summary of the invention
A series of concept of reduced forms is introduced in Summary, this will in the detailed description section into
One step is described in detail.Summary of the invention is not meant to attempt to limit technical solution claimed
Key feature and essential features do not mean that the protection scope for attempting to determine technical solution claimed more.
The present invention in order to overcome the problems, such as presently, there are, provide a kind of pressure sensor, including pressure sensitive unit, it is described
Pressure sensitive unit includes several spaced linear openings, to expose pressure sensing membrane；
Wherein, several linear opening arrays circlewise structure, to form pressure sensing area.
Optionally, the pressure sensitive unit includes:
Substrate is formed with pressure sensor bottom electrode in the substrate；
Pressure sensing membrane, positioned at the top of the pressure sensor bottom electrode；
Pressure sensor cavities, between the pressure sensor bottom electrode and the pressure sensing membrane；
Coating is located above the pressure sensing membrane；
Wherein, several linear openings are formed in the coating, to form the pressure sensing area.
Optionally, the linear structure in long strip that is open.
Optionally, the pressure sensor further includes pressure reference unit.
Optionally, pressure sensor cavities are not included in the pressure reference unit.
Optionally, the pressure reference unit includes:
Substrate is formed with pressure sensor bottom electrode in the substrate；
Pressure sensing membrane, positioned at the top of the pressure sensor bottom electrode；
Encapsulant layer, between the pressure sensor bottom electrode and the pressure sensing membrane；
Coating is located above the pressure sensing membrane, the pressure sensing membrane is completely covered.
Optionally, the encapsulant layer selects amorphous carbon.
Optionally, it is also formed with metal interconnection structure in the substrate, to connect the pressure sensing membrane.
Optionally, the coating selects plasma enhanced silicon nitride.
The present invention also provides a kind of electronic devices, including above-mentioned pressure sensor.
In order to solve the problems in the existing technology the present invention, provides a kind of new pressure sensor, the pressure
Sensor includes pressure sensitive unit and pressure reference unit, wherein pressure sensing area described in the pressure sensitive unit by
Conventional rectangle is improved to the cyclic structure formed by several spaced linear openings, and the linear opening has smaller
Critical size, while there is no pressure sensor cavities in the pressure reference unit, the position of the pressure sensor cavities is filled out
Filled with encapsulant layer, the sensitivity, accuracy and stability of pressure sensor can be further improved by above-mentioned improvement.
Detailed description of the invention
Following drawings of the invention is incorporated herein as part of the present invention for the purpose of understanding the present invention.Shown in the drawings of this hair
Bright embodiment and its description, device used to explain the present invention and principle.In the accompanying drawings,
Fig. 1 a-1b is the structural schematic diagram of pressure sensor described in the prior art；
Fig. 1 c-1d is the pressure response curve figure of pressure sensor described in the prior art；
Fig. 2 a-2c is the structural schematic diagram of pressure sensor described in the embodiment of the present invention.
Specific embodiment
In the following description, a large amount of concrete details are given so as to provide a more thorough understanding of the present invention.So
And it is obvious to the skilled person that the present invention may not need one or more of these details and be able to
Implement.In other examples, in order to avoid confusion with the present invention, for some technical characteristics well known in the art not into
Row description.
It should be understood that the present invention can be implemented in different forms, and should not be construed as being limited to propose here
Embodiment.On the contrary, provide these embodiments will make it is open thoroughly and completely, and will fully convey the scope of the invention to
Those skilled in the art.In the accompanying drawings, for clarity, the size and relative size in the area Ceng He may be exaggerated.From beginning to end
Same reference numerals indicate identical element.
It should be understood that when element or layer be referred to " ... on ", " with ... it is adjacent ", " being connected to " or " being coupled to " it is other
When element or layer, can directly on other elements or layer, it is adjacent thereto, be connected or coupled to other elements or layer, or
There may be elements or layer between two parties by person.On the contrary, when element is referred to as " on directly existing ... ", " with ... direct neighbor ", " directly
It is connected to " or " being directly coupled to " other elements or when layer, then there is no elements or layer between two parties.It should be understood that although can make
Various component, assembly units, area, floor and/or part are described with term first, second, third, etc., these component, assembly units, area, floor and/
Or part should not be limited by these terms.These terms be used merely to distinguish a component, assembly unit, area, floor or part with it is another
One component, assembly unit, area, floor or part.Therefore, do not depart from present invention teach that under, first element discussed below, portion
Part, area, floor or part are represented by second element, component, area, floor or part.
Spatial relation term for example " ... under ", " ... below ", " below ", " ... under ", " ... it
On ", " above " etc., herein can for convenience description and being used describe an elements or features shown in figure with
The relationship of other elements or features.It should be understood that spatial relation term intention further includes making other than orientation shown in figure
With the different orientation with the device in operation.For example, then, being described as " under other elements if the device in attached drawing is overturn
Face " or " under it " or " under it " elements or features will be oriented in other elements or features "upper".Therefore, exemplary art
Language " ... below " and " ... under " it may include upper and lower two orientations.Device can additionally be orientated (be rotated by 90 ° or its
It is orientated) and spatial description language as used herein correspondingly explained.
The purpose of term as used herein is only that description specific embodiment and not as limitation of the invention.Make herein
Used time, " one " of singular, "one" and " described/should " be also intended to include plural form, unless the context clearly indicates separately
Outer mode.It is also to be understood that term " composition " and/or " comprising ", when being used in this specification, determines the feature, whole
The presence of number, step, operations, elements, and/or components, but be not excluded for one or more other features, integer, step, operation,
The presence or addition of component, assembly unit and/or group.Herein in use, term "and/or" includes any of related listed item and institute
There is combination.
In order to thoroughly understand the present invention, detailed step and detailed structure will be proposed in following description, so as to
Illustrate technical solution of the present invention.Presently preferred embodiments of the present invention is described in detail as follows, however other than these detailed descriptions, this
Invention can also have other embodiments.
Pressure sensor generally includes pressure sensitive unit and pressure reference unit at present, and wherein pressure sensitive unit is as schemed
Shown in 1a, including substrate 101, it is formed with cmos device or other active devices etc. in the substrate 101, in the substrate
In be also formed with metal interconnection structure and pressure sensor bottom electrode 104, in the pressure sensor bottom electrode 104
Top is formed with pressure sensor cavities 11 and pressure sensing membrane 103, is also formed with and covers in the top of the pressure sensing membrane 103
Cap rock 102, with pressure sensing membrane 103 described in exposed portion, forms pressure wherein being formed with opening 10 in the coating 102
Sensitive zones, wherein the opening 10 is usually square ring structure, such as rectangle or square, such as Fig. 1 a right figure institute
Show.
Wherein, the structure of the pressure reference unit is as shown in Figure 1 b, and structure is similar to pressure sensitive unit, difference
Be in in pressure reference unit be located at the pressure sensing membrane 103 above the coating 102 in not will form opening.
Select the structure such as Fig. 1 a-1b shown in carry out pressure test when, when pressure is smaller, power that coating is subject to
The response detected between pressure has good linear relationship, and as illustrated in figure 1 c, but becoming larger with pressure, pressure response become
It is not reproducible, the power that coating is subject to there is no with pressure it is big increase it is constant become larger, pressure response does not have good line
Sexual intercourse, to affect the sensitivity and accuracy of pressure sensor.
A large amount of experiment and analysis have been carried out to the invention people, it is found that the reason of generating the above problem is due to pressure sensing
Having differences in the sensing capacitance and pressure reference unit in unit referring between capacitor, can from the linear graph of Fig. 1 d
Out, the linear properties referring to capacitor in the sensing capacitance in pressure sensitive unit and pressure reference unit have differences, and draw
The reason of playing the difference is in the pressure sensitive unit pressure sensing area with opening, and in the pressure reference
It is not present in unit, therefore in order to further increase the sensitivity of the pressure sensor and accuracy, needs to overcome above-mentioned ask
Topic.
Embodiment 1
In order to solve the problems in the existing technology the present invention, provides a kind of pressure sensor, with reference to the accompanying drawing
2a-2c is further described the pressure sensor.
Pressure sensor of the present invention includes pressure sensitive unit and pressure reference unit, wherein existing in order to solve
Various problems present in technology all improve the structure of the pressure sensitive unit and pressure reference unit, divide below
It is other to be illustrated to described.
Firstly, referring to Fig. 2 a-2b, wherein Fig. 2 a is the sectional view of pressure sensitive unit, and Fig. 2 b is pressure sensing list
The top view of member.
As shown in Figure 2 a, the pressure sensitive unit includes:
Substrate 201 is formed with pressure sensor bottom electrode 204 in the substrate 201；
Pressure sensing membrane 203, positioned at the top of the pressure sensor bottom electrode 204；
Pressure sensor cavities 21, be located at the pressure sensor bottom electrode 204 and the pressure sensing membrane 203 it
Between；
Coating 202 is located at 203 top of pressure sensing membrane；
Wherein, it is formed with linear opening 20 in the coating, exposes the pressure sensing membrane, is passed with forming the pressure
Sensillary area domain.
As shown in Figure 2 a, it is formed with pressure sensor bottom electrode 204 in the substrate 201, for realizing to pressure
Sensing.
Be formed with various active devices in the substrate 201, for example, on the substrate formed cmos device and other
Active device, the active device is not limited to a certain kind, and details are not described herein.
In addition, being also formed with metal interconnection structure in the substrate 201, it is located at the pressure sensor bottom electrode 204
Two sides, the metal interconnection structure alternates connection by metal layer and through-hole and is formed, wherein the metal interconnection structure
For connecting the cmos device being located in substrate 201 or other active devices and the pressure sensitive unit.Further, institute
The one end for stating metal interconnection structure is connected to pressure sensing membrane 203.
Wherein, the pressure sensing membrane 203 can select sensing film materials commonly used in the art, for example, can select Si,
The materials such as SiGe, but be not limited to that the example.
Wherein, the both ends of the pressure sensing membrane 203 are connected with metal interconnection structure, in the pressure sensing membrane 203
Between be formed with pressure sensor cavities 21 below position, wherein the pressure sensor cavities 21 are located at the pressure sensor
The top of bottom electrode 204.
Pressure is collectively formed in the pressure sensor bottom electrode 204, pressure sensor cavities 21 and pressure sensing membrane 203
Power sensing capacitor, wherein the pressure sensor bottom electrode 204 and pressure sensing membrane 203 are as the upper of the capacitor
Bottom crown, dielectric medium of the air dielectric as capacitor in the pressure sensor cavities 21, when the pressure sensing membrane 203
Deformation occurs after being under pressure, and so as to cause the change of distance between two-plate, capacitor is made to change, and realizes to the pressure
The detection of power.
Wherein, the coating 202 is located at the top of the pressure sensing membrane 203, covers the pressure sensing membrane 203,
It wherein is formed with pressure sensing area in the coating 202, to expose the pressure sensing membrane 203, to perceive ambient pressure
Variation, realize the sensing of pressure.
Optionally, the coating selects plasma enhanced silicon nitride.
It is pressure sensing to improve in order to reduce the difference between the pressure sensitive unit and the pressure reference unit
Sensitivity in this application improves the pressure sensing area, the pressure sensing area generally cyclic structure,
The cyclic structure can be rectangular perhaps round or other shapes, it is not limited to a certain.
Wherein, the cyclic structure is made of several spaced linear openings 20, as shown in Figure 2 b, is covered positioned at described
In cap rock, the linear opening 20 exposes the pressure sensing membrane 203.Pressure sensing area in compared with the existing technology, this
Pressure sensing area in application is no longer an entire annular groove, but is formed by multiple openings spaced apart from each other, relative to whole
A annular groove, the difference with higher sensitivity, while between reference unit also further reduce.
Wherein, 20 structures in long strip of the linear opening, as shown in Figure 2 b；The opening has lesser crucial ruler
It is very little, it is open described in the prior art usually rectangular, such as rectangle, and its critical size is big for 8um or more, and this Shen
Please described in pressure sensing area small more of aperture efficiency 8um, improve pressure sensing sensitivity and stability.
The pressure sensor further includes pressure reference unit, and it is empty that pressure sensor is not included in the pressure reference unit
Chamber, to reduce the variation of pressure reference unit.
Specifically, the structure of the pressure reference unit is similar to the structure of pressure sensitive unit, the difference is that, institute
The structure for stating pressure reference unit is as shown in Figure 2 c, wherein the pressure reference unit does not have pressure sensing area, the covering
It is not open in layer 202.
In addition, relatively with the pressure sensitive unit, the pressure is referring to single in order to improve the stability of pressure sensor
There is no pressure sensor cavities in member, the position of the pressure sensor cavities is filled with encapsulant layer 205.
Optionally, the encapsulant layer 205 selects amorphous carbon.
In order to solve the problems in the existing technology the present invention, provides a kind of new pressure sensor, the pressure
Sensor includes pressure sensitive unit and pressure reference unit, wherein pressure sensing area described in the pressure sensitive unit has
Conventional rectangle is improved to the cyclic structure formed by several spaced linear openings, and the linear opening has smaller
Critical size, while there is no pressure sensor cavities in the pressure reference unit, the position of the pressure sensor cavities is filled out
Filled with encapsulant layer, the sensitivity, accuracy and stability of pressure sensor can be further improved by above-mentioned improvement.
Embodiment 2
The present invention also provides a kind of electronic devices, including pressure sensor described in embodiment 1.
The electronic device of the present embodiment can be mobile phone, tablet computer, laptop, net book, game machine, TV
Any electronic product such as machine, VCD, DVD, navigator, camera, video camera, recording pen, MP3, MP4, PSP or equipment can also be
Any intermediate products including the pressure sensor.The electronic device of the embodiment of the present invention, due to having used above-mentioned pressure
Sensor, thus there is better performance.
The present invention has been explained by the above embodiments, but it is to be understood that, above-described embodiment is only intended to
The purpose of citing and explanation, is not intended to limit the invention to the scope of the described embodiments.Furthermore those skilled in the art
It is understood that the present invention is not limited to the above embodiments, introduction according to the present invention can also be made more kinds of member
Variants and modifications, all fall within the scope of the claimed invention for these variants and modifications.Protection scope of the present invention by
The appended claims and its equivalent scope are defined.
Claims (10)
1. a kind of pressure sensor, including pressure sensitive unit, the pressure sensitive unit includes several spaced threadiness
Opening, to expose pressure sensing membrane；
Wherein, several linear opening arrays circlewise structure, to form pressure sensing area and improve the pressure sensing
The sensitivity of device.
2. pressure sensor according to claim 1, which is characterized in that the pressure sensitive unit includes:
Substrate is formed with pressure sensor bottom electrode in the substrate；
Pressure sensing membrane, positioned at the top of the pressure sensor bottom electrode；
Pressure sensor cavities, between the pressure sensor bottom electrode and the pressure sensing membrane；
Coating is located above the pressure sensing membrane；
Wherein, several linear openings are formed in the coating, to form the pressure sensing area.
3. pressure sensor according to claim 1 or 2, which is characterized in that the linear structure in long strip that is open.
4. pressure sensor according to claim 1 or 2, which is characterized in that the pressure sensor further includes pressure ginseng
According to unit.
5. pressure sensor according to claim 4, which is characterized in that do not include pressure in the pressure reference unit and pass
Sensor cavity.
6. pressure sensor according to claim 4, which is characterized in that the pressure reference unit includes:
Substrate is formed with pressure sensor bottom electrode in the substrate；
Pressure sensing membrane, positioned at the top of the pressure sensor bottom electrode；
Encapsulant layer, between the pressure sensor bottom electrode and the pressure sensing membrane；
Coating is located above the pressure sensing membrane, the pressure sensing membrane is completely covered.
7. pressure sensor according to claim 6, which is characterized in that the encapsulant layer selects amorphous carbon.
8. pressure sensor according to claim 2, which is characterized in that be also formed with metal in the substrate and mutually link
Structure, to connect the pressure sensing membrane.
9. pressure sensor according to claim 2, which is characterized in that the coating selects plasma enhanced silicon nitride
Silicon.
10. a kind of electronic device, including pressure sensor described in one of claim 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410452315.XA CN105466610B (en) | 2014-09-05 | 2014-09-05 | A kind of pressure sensor and electronic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201410452315.XA CN105466610B (en) | 2014-09-05 | 2014-09-05 | A kind of pressure sensor and electronic device |
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| CN105466610A CN105466610A (en) | 2016-04-06 |
| CN105466610B true CN105466610B (en) | 2019-05-17 |
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| CN201410452315.XA Active CN105466610B (en) | 2014-09-05 | 2014-09-05 | A kind of pressure sensor and electronic device |
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US10892199B2 (en) * | 2019-04-01 | 2021-01-12 | Advanced Semiconductor Engineering, Inc. | Semiconductor package structure, product and method for manufacturing the same |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1228837A (en) * | 1996-11-22 | 1999-09-15 | 西门子公司 | Micromechanical sensor |
| CN1390774A (en) * | 2001-06-11 | 2003-01-15 | 惠普公司 | Micro ion pumps used for low-pressure miniature devices |
| CN102515090A (en) * | 2011-12-21 | 2012-06-27 | 上海丽恒光微电子科技有限公司 | Pressure sensor and formation method thereof |
| CN102692294A (en) * | 2012-05-29 | 2012-09-26 | 上海丽恒光微电子科技有限公司 | Composite pressure transducer and formation method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6837111B2 (en) * | 2002-06-24 | 2005-01-04 | Mykrolis Corporation | Variable capacitance measuring device |
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2014
- 2014-09-05 CN CN201410452315.XA patent/CN105466610B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1228837A (en) * | 1996-11-22 | 1999-09-15 | 西门子公司 | Micromechanical sensor |
| CN1390774A (en) * | 2001-06-11 | 2003-01-15 | 惠普公司 | Micro ion pumps used for low-pressure miniature devices |
| CN102515090A (en) * | 2011-12-21 | 2012-06-27 | 上海丽恒光微电子科技有限公司 | Pressure sensor and formation method thereof |
| CN102692294A (en) * | 2012-05-29 | 2012-09-26 | 上海丽恒光微电子科技有限公司 | Composite pressure transducer and formation method thereof |
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| CN105466610A (en) | 2016-04-06 |
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